CN110729317A - 固态成像装置,制造固态成像装置的方法和电子设备 - Google Patents
固态成像装置,制造固态成像装置的方法和电子设备 Download PDFInfo
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Abstract
Description
像素 | 200 |
衬底 | 210 |
第一衬底表面 | 211 |
第二衬底表面 | 212 |
光电二极管 | PD1 |
光电转换部 | 220 |
第一导电类型半导体层 | 221、222 |
第二导电类型半导体层 | 230、231、232 |
平坦层 | 224 |
第一导电类型半导体区域 | 233 |
第二导电类型半导体区域 | 223 |
栅电极 | 252 |
传输晶体管 | TG1-Tr |
浮动扩散区 | FD1 |
存储晶体管 | SG1-Tr |
存储电容器 | CS1 |
第一区域 | AR1 |
第二区域 | AR2 |
第一深度 | DP1 |
第二深度 | DP2 |
微透镜 | MCL |
第一电极 | EL1 |
第二电极 | EL2 |
滤色器部 | CF |
Claims (26)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP2018-134131 | 2018-07-17 | ||
JP2018134131 | 2018-07-17 |
Publications (2)
Publication Number | Publication Date |
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CN110729317A true CN110729317A (zh) | 2020-01-24 |
CN110729317B CN110729317B (zh) | 2022-06-14 |
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CN201910647131.1A Active CN110729317B (zh) | 2018-07-17 | 2019-07-17 | 固态成像装置,制造固态成像装置的方法和电子设备 |
Country Status (4)
Country | Link |
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EP (1) | EP3598501B1 (zh) |
JP (1) | JP7455525B2 (zh) |
CN (1) | CN110729317B (zh) |
TW (1) | TWI725484B (zh) |
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Publication number | Priority date | Publication date | Assignee | Title |
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WO2021234423A1 (en) * | 2020-05-21 | 2021-11-25 | Sony Semiconductor Solutions Corporation | Capacitive structures for imaging devices and imaging apparatuses |
CN114374805A (zh) * | 2020-10-14 | 2022-04-19 | 深圳市鸿飞精密科技有限公司 | 图像传感器及电子设备 |
JP2022159833A (ja) * | 2021-04-05 | 2022-10-18 | ブリルニクスジャパン株式会社 | 固体撮像装置、固体撮像装置の駆動方法、および電子機器 |
JP2023104261A (ja) * | 2022-01-17 | 2023-07-28 | ブリルニクス シンガポール プライベート リミテッド | 固体撮像装置、固体撮像装置の駆動方法、および電子機器 |
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EP3598501A3 (en) | 2020-01-29 |
TWI725484B (zh) | 2021-04-21 |
TW202006961A (zh) | 2020-02-01 |
JP2020017724A (ja) | 2020-01-30 |
CN110729317B (zh) | 2022-06-14 |
EP3598501B1 (en) | 2022-06-01 |
JP7455525B2 (ja) | 2024-03-26 |
EP3598501A2 (en) | 2020-01-22 |
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