CN110713868A - Post etch residue cleaning solution capable of removing titanium nitride - Google Patents
Post etch residue cleaning solution capable of removing titanium nitride Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3245—Aminoacids
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- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/39—Organic or inorganic per-compounds
- C11D3/3942—Inorganic per-compounds
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- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/263—Ethers
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- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
Abstract
The present invention relates to a composition that enables high TiN etching and removal of organic polymers and residues without damaging Cu, Co and/or Ru, or without risk of damage to other materials present in the structure (e.g., low-k materials), comprising: a) an organic amine; b) one or more inhibitors; c) one or more buffering agents; d) an activator; e) one or more glycol ethers; f) optionally an aprotic solvent; and g) water. The invention also relates to a kit comprising said composition in combination with an oxidizing agent and to the use thereof.
Description
Technical Field
The present invention relates to compositions for post-implant, post-etch/etch and post-ash related processing in the semiconductor/IC manufacturing field. More particularly, the present invention relates to a composition having good cleaning properties for fluorocarbon (CFx) polymers and organic residues, capable of completely removing or shrinking metal hard masks (e.g., titanium nitride (TiN)), while protecting Cu, Co and Ru as liners, caps or barrier layers for interconnects.
Background
Integrated Circuits (ICs) are made up of millions of active devices formed in or on a silicon substrate. The active devices, which are initially isolated from each other, are bonded together to form functional circuits and components. These devices are interconnected by using well-known multilayer interconnects. Interconnect structures typically have a first metallization layer, an interconnect layer, a second metallization level, and in recent years, third and beyond.
In the field of semiconductor/IC production, post-etch residue (PER) is typically removed by a wet clean process. A solution comprising a complexing agent and water may be used herein. Furthermore, the selective etching of different layers within a microelectronic structure is considered to be a critical and crucial step in the IC manufacturing process.
In the first and subsequent metallization layers, it is desirable to have a high TiN etch rate, and to achieve a high TiN etch rate, a high level of oxidizer is required to achieve a high level of TiN etching. In addition, the dry etching step used for multiple patterning processes can produce heavy fluorocarbon (CFx) polymers that are very difficult to remove from the surface of the IC structure. Therefore, the use of an oxidizing agent to decompose the CFx polymer is also needed. In subsequent metallization layers that contain primarily copper (Cu-plugs), it is desirable to be able to etch TiN at a rate such that the copper plugs are not significantly damaged. Depending on the respective thicknesses of the TiN and metal layers (which depends to a large extent on the integration scheme used), solutions are needed that can adjust the etch rates of the TiN and metal.
It should be understood that the presence of an oxidizing agent (e.g., hydrogen peroxide) in the formulation may be necessary to achieve a sufficiently high TiN etch rate. However, the increase in etch rates of copper and related metals (e.g., Co, Cu, and Ru corrosion) by the addition of oxidizing agents such as hydrogen peroxide is an undesirable effect. Therefore, a delicate balance must be struck between removing CFx polymer on one side to achieve a sufficiently high etch rate for TiN and a sufficiently low etch rate for metals (e.g., Cu, Co, and Ru) on the other side. To accomplish this, other components are added to the solution, for example, corrosion inhibitors, activators, buffer components, and solvents.
Another problem is that as more and more wafers are cleaned, it is accompanied by the reaction of TiN with oxidizing agents (such as hydrogen peroxide) due to the formation of acidic reaction products (e.g., H)2TiO3) The pH of the solution decreases, which results in a decrease in TiN etch rate. This problem is related to the recovery capacity of the composition, which is very important and difficult to achieve in this field.
US7,919,445 relates to a novel solution for removing post-etch residue. Imidazoline compounds are preferably added as corrosion inhibitors for treating the wafer surface.
WO03060045 relates to an aqueous composition for removing photoresist, etch and ash residues and contaminants from semiconductor substrates. A single corrosion inhibitor compound or a mixture of corrosion inhibitors may be used in the stripping and cleaning compositions, such as benzotriazole, benzoic acid, malonic acid, gallic acid, catechol, ammonium malonate. WO03060045 does not use an oxidant to etch TiN nor does it discuss the protection of Cu, Co or Ru.
WO06138505 relates to dense fluid compositions, such as supercritical fluid compositions, for removing hardened photoresist, post etch residue and/or bottom antireflective coatings from the surface of microelectronic devices. However, the fluid composition contains at least one fluoride source, which can damage the low-k dielectric material. WO06138505 does not relate to the etching of TiN and the protection of Cu, Co or Ru.
Clearly, there is a need to find a composition that can achieve high TiN etching and remove CFx polymer without damaging Cu, Co or Ru, nor the risk of damaging other materials present in the structure (e.g., low-k materials). In addition, there is a need to address the frequently observed decrease in TiN etch rate as wafer loading increases due to reaction product build-up to recover the composition for continued use (recycle mode use). The object is achieved by the composition of the present application.
Disclosure of Invention
Accordingly, the present invention provides a recyclable composition capable of high TiN etching and removal of CFx polymer without substantially etching Cu, Co and Ru, or risking damage to other materials present in the structure (e.g., low-k materials), comprising:
a) an organic amine;
b) one or more inhibitors;
c) one or more buffering agents;
d) an activator;
e) one or more glycol ethers;
f) optionally an aprotic solvent;
g) and (3) water.
Another aspect of the present invention is the use of the above composition in combination with an oxidizing agent to modulate the etch rate of Cu/Co/Ru and TiN and/or remove organic and/or inorganic residues, the formulation comprising:
A) a composition, comprising:
a) an organic amine;
b) one or more inhibitors;
c) one or more buffering agents;
d) an activator;
e) one or more glycol ethers;
f) optionally an aprotic solvent;
g) water;
B) oxidizing agents, such as hydrogen peroxide, ozonated water, persulfuric acid.
Other objects, advantages and novel features of the invention will become apparent from the following detailed description of the invention when considered in conjunction with the drawings.
Drawings
Fig. 1 shows a generic structure on a wafer in a first metallization layer, specifying C, O, F, Ti and N containing residues 11, a Cu layer 12, a Co or Ru barrier layer 13, a low-k material 14 and TiN 15.
Fig. 2 shows the removal of C, O, F, Ti and N containing residue 11 and the partial etching and total removal of TiN 15 in the first metallization layer.
Fig. 3 schematically depicts the experimental setup used in the experiment (thickness measurement; etch rate; cleaning performance (SEM, TEM, xps.)).
Detailed Description
While the present disclosure is susceptible of embodiment in various forms, there will hereinafter be described a presently preferred embodiment with the understanding that the present disclosure is to be considered an example of the disclosure and is not intended to limit the disclosure to the specific embodiment shown.
In one embodiment of the present application, the composition is prepared by mixing: a) an organic amine; b) one or more inhibitors; c) one or more buffering agents; d) an activator; e) one or more glycol ethers; f) optionally an aprotic solvent; g) and (3) water. The composition is useful for preparing formulations that can modulate TiN and Cu/Co/Ru etch rates and removable polymers (residues) during semiconductor/IC manufacturing processes. To this end, an oxidizing agent may be added to the composition.
Thus, in another embodiment of the present application, the formulation is prepared by mixing, in any order, a) an organic amine, b) one or more inhibitors, c) one or more buffers, d) an activator, e) one or more glycol ethers, f) optionally an aprotic solvent, and g) water, followed by addition of an oxidizing agent.
Then, the unpatterned wafer (TiN, Cu/Co/Ru, low-k) or patterned wafer to be treated was broken into test pieces and then contacted with the prepared composition.
As shown in fig. 1 to 2, the residue removal and TiN etching were simultaneously performed while controlling the etching rates of TiN and Cu/Co/Ru by changing the composition. Furthermore, any components remaining on the surface may be removed by rinsing with a suitable solvent or solvent mixture, such as water and/or isopropyl alcohol (IPA).
The combination of the organic amine with the oxidizing agent makes the polymer more water soluble. In addition, the organic amine may stabilize the oxidizing agent such that the compositionIs possible. The organic amine may be selected from the following: 1-methylimidazole; imidazole; pyrazole; 4-acetylmorpholine; n-formyl morpholine; 1,3, 5-tris (dimethylaminopropyl) -s-hexahydrotriazine; 4-methylpyridine N-oxide; 2-methylpyridine N-oxide; 4-methoxypyridine N-oxide hydrate; 4-chloropyridine N-oxide; 8-methylquinoline N-oxide; 1-dodecylamine, N-dimethyl-N-oxide; 4-methylmorpholine-4-oxide; 1-tetradecylamine, N-dimethyl-N-oxide; (C)10-C16) Alkyl dimethylamine oxides; (C)12-18) Alkyl dimethyl-N-oxide; pyridine 1-oxide; decylamine, N-dimethyl-N-oxide; hexadecylamine, N-dimethyl-N-oxide. Preferably, the organic amine may be selected from 4-methylmorpholine 4-oxide and 1,3, 5-tris (dimethylaminopropyl) -s-hexahydrotriazine.
The amount of organic amine present in the composition of the present invention may range from 0.01 to 25 wt%, preferably from 0.1 to 15 wt%, based on the total weight of the composition.
In a preferred embodiment, the amount of 4-methylmorpholine 4-oxide present in the composition as an organic amine ranges from 0.5 to 20 wt%, preferably 5 to 20 wt%, most preferably 8 to 15 wt%, based on the total weight of the composition. For example, 4-methylmorpholine 4-oxide is present in the composition as an organic amine in an amount of 8 wt%, based on the total weight of the composition.
The inhibitor is a corrosion inhibitor for Cu, Co or Ru and may be selected from a class of compounds known as polyethyleneimines (class a), azoles (class b) and derivatives thereof. The etch rate of various compounds can be controlled by varying the functional groups in various types of inhibitors.
(A) Polyethyleneimine: BASF
FG、G20、G35、G100、PR8515、HF、P、PS、PO100、PN50、PN 60、SK；
(B) Azoles: histidine, adenosine, adenine; pyridine; a benzisoxazole; 2,2' -bipyridine; 4,4 '-bis (chloromethyl) -2,2' -bipyridine; 1,2, 3-triazole; 1,2, 4-triazoles(ii) a Tetrazole; pentazole, 1,3, 4-oxadiazole; oxadiazole, 1,2, 3-oxadiazole; 1,2, 5-oxadiazole; 1,2, 4-oxadiazole; a thiazole; 1,2, 3-thiadiazole; 1,2, 4-thiadiazole; 1,2, 5-thiadiazole; 1,3, 4-thiadiazole; benzotriazole (BTA); 5-alkylbenzotriazoles (alkyl ═ C)nH2n+1Wherein n is 1-6); 6-alkylbenzotriazoles (alkyl ═ C)nH2n+1Wherein n is 1-6); 5-amino-benzotriazole; 6-amino-benzotriazole; 1- (methoxymethyl) -1H-benzotriazole; 1H-benzotriazole-1-methanol; 1- (chloromethyl) -1H-benzotriazole; 5-phenyl-benzotriazole; n, N-bis (2-ethylhexyl) -4-methyl-1H-benzotriazole-1-methylamine; n, N-bis (2-ethylhexyl) -5-methyl-1H-benzotriazole-1-methanamine; 2,2' - [ [ (5-methyl-1H-benzotriazol-1-yl) methyl]Imino radical](ii) a bisethanol; 5-nitro-benzotriazole; benzotriazole carboxylic acids; 1-amino-1, 2, 4-triazole; hydroxybenzotriazole; 2- (5-amino-pentyl) -benzotriazole; 1-amino-1, 2, 3-triazole; 1-amino-5-methyl-1, 2, 3-triazole; 3-amino-1, 2, 4-triazole; 5-amino-1, 2, 4-triazole; 3-isopropyl-1, 2, 4-triazole; 3, 5-diamino-1, 2, 4-triazole; 5-phenylsulfide benzotriazole; 5-halo-benzotriazole (halo ═ F, Cl, Br, or I); 6-halo-benzotriazole (halo ═ F, Cl, Br, or I); a naphthotriazole; 4-methyl-2-phenylimidazole; 5-aminotetrazole; pentylenetetrazole; 5-phenyl-1H-tetrazole; 5-benzyl-1H-tetrazole; 5-methyltetrazole; 2-benzylpyridine; 2, 4-diamino-6-methyl-1, 3, 5-triazine; methyl tetrazole; an imidazolinone;
1, 5-pentylenetetrazole, imidazolinethione; 4-amino-4H-1, 2, 4-triazole; benzothiazole; a benzimidazole.
The amount of inhibitor present in the composition of the invention may range from 0.01 to 6 wt%, preferably from 0.5 to 2 wt%, based on the total weight of the composition.
In a preferred embodiment, the amounts of BTA and 6-methylbenzotriazole present in the composition as inhibitors range from 0.1 to 6 wt% and 0.01 to 5 wt%, preferably 0.5 to 3 wt% and 0.1 to 2 wt%, most preferably 0.8 to 2 wt% and 0.5 to 1 wt%, respectively, based on the total weight of the composition. For example, BTA and 6-methyl-benzotriazole may be present in the composition as inhibitors in amounts of 1 wt% and 1 wt%, respectively, based on the total weight of the composition.
One of the possible reaction equations for oxidizing and etching TiN in the presence of hydrogen peroxide is given in chemical equation 1. In which H is formed2TiO3Is acidic. Also, in the process, ammonia formed in the reaction evaporates. Both processes help to steadily lower the pH of the solution, which can result in changes in the etch rate of TiN and metal.
2TiN+H2O2+6H2O→2TiO(OH)2+2NH4OH (chemical reaction 1)
Alternatively, hydrogen peroxide can be reacted with Ti according to chemical equations 2 and 34+The ions react to break down, releasing more protons and further lowering the pH of the composition:
H2O2+Ti4+→HO2·+H++Ti3+(chemical reaction 2)
To stabilize the etching rate of TiN, this effect of acid accumulation and ammonia evaporation must be compensated for to ensure pH stability of the composition. For this purpose, the concept of a pH buffer can be applied to the mechanism and a buffer system added to the composition.
The buffer component may be selected from the following: ammonium hydroxide; phosphoric acid; tetramethylammonium hydroxide (TMAH); tetraethylammonium hydroxide (TEAH); tetrabutylammonium hydroxide; methanolamine (MEA); ethanolamine (DEA); triethanolamine (TEA); polyethylene glycol amine; diglycolamine; triglycolamine; 1,3, 5-tris (dimethylaminopropyl) -s-hexahydrotriazine.
The amount of buffering agent present in the compositions of the present invention may range from 0.01 to 5 wt%, preferably 0.5 to 2 wt%, based on the total weight of the composition.
In a preferred embodiment, the amount of ammonium hydroxide and diammonium phosphate present in the composition as buffering agents ranges from 0.01 to 1 wt% and 0.01 to 5 wt%, preferably from 0.05 to 0.7 wt% and 0.1 to 2 wt%, most preferably from 0.1 to 0.5 wt% and 0.5 to 1.5 wt%, respectively, based on the total weight of the composition. For example, ammonium hydroxide and diammonium phosphate may be present in the composition as buffering agents in amounts of 0.12 wt% and 1 wt%, respectively, based on the total weight of the composition.
Buffers may also be used to control pH to prevent corrosion of some sensitive metals (e.g., Co at high pH). The inventors have found that the pH of the claimed composition when mixed with hydrogen peroxide is in the 6.0 to 7.5 window, not only reduces Cu, Co and Ru corrosion, but also helps to minimize damage to the dielectric material (low-k film).
However, lowering the pH also lowers the oxidation potential of hydrogen peroxide, resulting in an undesirable decrease in TiN etch rate. In this field, relatively high concentrations of oxidizing agents are typically required to achieve sufficiently high metal hardmask etch rates. Surprisingly, the inventors have successfully discovered a series of activators to increase TiN etch rate in low pH regime. Thus, when activators (such as ammonium salts and quaternary ammonium salts) are added to the composition to activate the TiN/oxidant reaction, the amount of oxidant is thereby reduced while maintaining a high TiN etch rate. It is noted that some activators may also be used as components of the above-mentioned buffer systems.
The activator may be selected from the following: ammonium methanesulfonate; ammonium dihydrogen phosphate ((NH)4)H2PO4) (ii) a Diammonium phosphate (diammonium phosphate, (NH)4)2HPO4) (ii) a Ammonium phosphate ((NH)4)3PO4) (ii) a Triammonium citrate; ammonium acetate; ammonium ethylene diamine tetraacetate; ethylenediaminetetraacetic acid tetraammonium; trans-1, 2-cyclohexylidene tetraacethyl tetraacetic acid tetraammonium; ammonium diethylenetriaminepentaacetate; hydroxyethyl ethylenediamine triacetic acid ammonium; ammonium methylglycine diacetate; nitrilotriacetic acid triammonium salt; ammonium persulfate; ammonium sulfate; ammonium carbonate; ammonium nitrate; ammonium biborate; ammonium carbamate; ammonium fluoride; ammonium hexafluorosilicate; ammonium hexafluorotitanate; ammonium metatungstate; ammonium pentaborate; ammonium tetrafluoroborate; ammonium triflate; trans-1, 2-cyclohexylidene dinitrotetraacetic acid tetramethylammonium; tetramethylammonium ethylene diamine tetraacetate.
The amount of activator present in the composition of the invention may range from 0.01 to 3 wt%, preferably from 0.1 to 1 wt%, based on the total weight of the composition.
In a preferred embodiment, the amount of trans-1, 2-cyclohexylenedinitrilo tetraacetic acid present in the composition as activator ranges from 0.01 to 0.5 wt%, preferably from 0.05 to 0.3 wt%, most preferably from 0.08 to 0.2 wt%, based on the total weight of the composition. For example, trans-1, 2-cyclohexylidene dinitrilo tetraacetic acid is present in the composition as an activator in an amount of 0.3 weight percent, based on the total weight of the composition.
Organic solvents that are partially miscible with water can be used to lower surface tension and increase surface wetting without experiencing any of the disadvantages associated with typical surfactants (e.g., strong physisorption to the surface) and to help dissolve organic polymers and polymer residues (e.g., -CFx, -CHx). Glycol ethers are particularly chosen as organic solvents and may be selected from the following: butyl Glycol (BG), Butyl Diglycol (BDG), butyl triglycol, n-hexyl diglycol, n-hexyl glycol, 2-hexyloxy-1-ethanol, tetrahydrofurfuryl alcohol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monopropyl ether, diethylene glycol monoisopropyl ether, diethylene glycol monobutyl ether, diethylene glycol monoisobutyl ether, diethylene glycol monobenzyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, triethylene glycol monomethyl ether, triethylene glycol dimethyl ether, polyethylene glycol monomethyl ether, diethylene glycol methyl ether, triethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, propylene glycol monomethyl ether, propylene glycol dimethyl ether, propylene glycol monobutyl ether, propylene glycol, monopropyl ether, dipropylene glycol monomethyl ether, Dipropylene glycol monopropyl ether, dipropylene glycol monoisopropyl ether, dipropylene glycol monobutyl ether, dipropylene glycol diisopropyl ether, tripropylene glycol monomethyl ether, 1-methoxy-2-butanol, 2-methoxy-1-butanol, 2-methoxy-2-methylbutanol, 1-dimethoxyethane, and 2- (2-butoxyethoxy) ethanol.
The amount of glycol ether present in the composition of the invention may range from 1 to 60 wt%, preferably from 10 to 50 wt%, based on the total weight of the composition.
In a preferred embodiment, the amount of BDG present in the composition as glycol ether ranges from 1 to 60 wt%, preferably from 10 to 55 wt%, most preferably from 15 to 45 wt%, based on the total weight of the composition. For example, the amount of BDG present in the composition as an activator is 30 wt%, based on the total weight of the composition.
Optionally, an aprotic solvent is also used in the composition to help dissolve other components in the composition and to improve the efficiency and solubility of organic residue removal from the wafer surface. The aprotic solvent (if present) may be selected from the following: dimethyl sulfoxide (DMSO), sulfolane, propylene carbonate, dimethylacetamide (DMAc), N-methyl-2-pyrrolidone (NMP), Dimethylformamide (DMF), or mixtures thereof.
The aprotic solvent, if present, can be present in the compositions of the present invention in an amount of from 1 to 50 weight percent, preferably from 5 to 25 weight percent, based on the total weight of the composition.
In a preferred embodiment, the amount of DMSO present in the composition as solvent ranges from 1 to 50 wt%, preferably from 3 to 20 wt%, most preferably from 5 to 15 wt%, based on the total weight of the composition. For example, the amount of BDG present in the composition as an activator is 30 wt%, based on the total weight of the composition.
The remainder was water.
In another embodiment of the present invention, an oxidizing agent may be added to a composition comprising a) an organic amine, b) one or more inhibitors, c) one or more buffers, d) an activator, e) one or more glycol ethers, f) optionally an aprotic solvent, and g) water to form a formulation. The oxidizing agent may be selected from hydrogen peroxide (H)2O2) Ozone water and persulfuric acid.
The oxidizing agent may be added in a volume ratio (ratio of composition comprising components a) to g) in the following range: from 65:1 to 1:5 (from about 0.51 to 26.2 wt%), preferably from 33:1 to 1: 52 (about from 1 to 21.3 wt%), most preferably from 22:1 to 1:1 (about from 1.5 to 16.2 wt%).
In another embodiment of the present application, a kit is provided. The kit is composed of a) a composition comprising: a) an organic amine; b) one or more inhibitors; c) one or more buffering agents; d) an activator; e) one or more glycol ethers; f) optionally an aprotic solvent and g) water.
The kit can be used to adjust the etch rates of Cu/Co/Ru and TiN, respectively, and to remove organic polymers and residues from wafers during semiconductor/IC manufacturing.
The experiments and examples performed below are intended to illustrate the etch and etch rates of TiN and Cu/Co/Ru, respectively, and show the removal of organic polymer and residue.
Experiment:
A. etching rate experiment:
step 1. unpatterned wafers (Cu/Co/Ru, TiN, low-k) or patterned wafers were selected from commercial sources.
Step 2. as shown in fig. 3, the wafer is broken into smaller samples 51.
Step 3, measuring the film thickness of the appropriate material:
1. for metals, layer thickness was measured using a 4-point probe or X-ray fluorescence (XRF);
2. for non-metals, ellipsometry is used to measure film thickness.
Step 4. preparation 52 is prepared as follows.
Step 5. place formulation 52 into the thermal cycling tank to reach a stable target temperature; the temperatures used are similar to those used in conventional industrial processes (about 40 to 70 ℃). The solution was stirred using a mechanical stirrer.
And 6, fixing the sample on a mechanical holder.
Step 7. as shown in FIG. 3, the sample is contacted with the solution for a period of time (typically 10 minutes).
And 8, cutting off the contact between the solution and the sample after a certain time, and cleaning the sample by using ultrapure water or IPA or a water/IPA mixture for about 2 to 5 minutes.
Step 9, using N as sample2Gas drying and inspection to ensure surface absenceThere is water left.
Step 10. residue thickness is measured as described in step 3.
For example, when the thickness before reaction is 330 angstroms (a), the thickness after reaction is 300 angstroms, and the reaction time is 10 minutes, the etching rate is calculated as follows:
etch rate (330-300/10 ═ etching rate
Per minute
B. Patterned wafer surface residue composition evaluation
The procedure is the same as a, but steps 3, 10 and 11 are not performed.
Example (c):
the following examples are given to allow a better understanding of the present disclosure. These examples should not be construed as narrowing the scope of the present disclosure in any way.
All percentage data in this specification are weight percentages based on the total weight of the composition, except that the oxidizing agent is added in a volume ratio of the composition comprising components a) to g) to the oxidizing agent. It goes without saying that the amounts of components a) to g) added in the composition add up to 100%.
Various examples follow the above steps as outlined below to illustrate the present disclosure and comparisons between the prior art and the present disclosure.
Examples 1 to 6
Action of organic amines
In examples 1 to 6, tetraammonium ethylenediaminetetraacetate was used as an activator, BDG was used as a glycol ether, DMSO was used as an aprotic solvent, and BTA was used as an inhibitor, while in examples 1-2, 3-4 and 5-6, imidazole, 1-methylmorpholine-4-oxide or 1,3, 5-tris (dimethylaminopropyl) -s-hexahydrotriazine was used as an organic amine, respectively. The remainder was water.
TABLE 1
The results in Table 1 show that TiN E/R increases with the amount of organic amine and that minimal Co and Cu E/R can be obtained with the appropriate organic amine
Examples 7 to 17
Action of the activating agent
In examples 7-17, 4-methylmorpholine 4-oxide was used as the organic amine, BDG was used as the glycol ether, DMSO was used as the aprotic solvent, and BTA was used as the inhibitor, while in examples 7-9, 10-11, 12-13, 14-15, and 16-17, tetraammonium ethylenediaminetetraacetate, trans-1, 2-cyclohexylenedinitrilotriacetic acid, triammonium citrate, ammonium acetate, or diammonium phosphate was used as the activator, respectively. The remainder was water.
TABLE 2
The results in Table 2 show that TiN E/R is very low when no activator is used (example 7), and increases significantly with increasing activator dose.
Examples 18 to 24
Action of inhibitors
In examples 18 to 24, 4-methylmorpholine 4-oxide was used as the organic amine, trans-1, 2-cyclohexylidenedinitrilotriacetic acid tetraammonium was used as the activator, BDG was used as the glycol ether, DMSO was used as the aprotic solvent, and one or more of BTA, N-bis (2-ethylhexyl) -4-methyl-1H-benzotriazole-1-methanamine, N-bis (2-ethylhexyl) -5-methyl-1H-benzotriazole-1-methanamine, 2' - [ [ (5-methyl-1H-benzotriazole-1-yl) methyl ] imino ] diethanol, and 6-methyl-benzotriazole are used as inhibitors, respectively. The remainder was water.
TABLE 3
The results in Table 3 show that the Cu/Co E/R decreases significantly with inhibitor combinations while maintaining similar TiN E/R. No Ru E/R was detected. That is, if the appropriate combination of inhibitors is used, protection of Cu/Co/Ru can be achieved without compromising TiN E/R.
Examples 25 to 28
Action of the buffer
In examples 25 to 28, 4-methylmorpholine 4-oxide was used as the organic amine, trans-1, 2-cyclohexylidenediazinium tetraacetate was used as the activator, BDG was used as the glycol ether, DMSO was used as the aprotic solvent, BTA, 2' - [ [ (5-methyl-1H-benzotriazol-1-yl) methyl ] imino ] bis-ethanol and 5-methyl-benzotriazole were used as the inhibitors, and one or more of TMAH (tetramethylammonium hydroxide), TEAH (tetraethylammonium hydroxide), ammonium hydroxide, diglycolamine and triglycolamine were used as the buffer. The remainder was water.
TABLE 4
The results in Table 4 show that the pH dropped significantly when no buffer was used (example 25), which also resulted in a drop in TiN E/R. Furthermore, if an appropriate combination of buffers is used, Cu/Co/Ru and good TiN E/R protection can be achieved.
Examples 29 to 34
Composition (A): h2O2Effect of volume ratio
In examples 29-34, 4-methylmorpholine 4-oxide was used as the organic amine, trans-1, 2-cyclohexylidenedinitrilo-tetraammonium tetraacetate was used as the activator, BDG was used as the glycol ether, DMSO was used as the aprotic solvent, BTA was used as the inhibitor, and no buffer was used. The remainder was water.
TABLE 5
The results in Table 5 show that TiN E/R is added with H in a volume ratio2O2Increase when the amount is increased, when composition/H2O2At a ratio of about 1:1, optimum TiN E/R and Cu/Co/Ru protection is achieved.
Examples 35 to 43
Action of the solvent
In examples 35 to 43, 4-methylmorpholine 4-oxide was used as the organic amine, trans-1, 2-cyclohexylidenediazinyltetraacetic acid tetraammonium was used as the activator, DMSO was used as the aprotic solvent, BTA, 2' - [ [ (5-methyl-1H-benzotriazol-1-yl) methyl ] imino ] bis-ethanol and 5-methyl-benzotriazole were used as the inhibitors, TMAH (tetramethylammonium hydroxide), TEAH (tetraethylammonium hydroxide) and ammonium hydroxide were used as the buffers, while butyl glycol, butyl triethylene glycol, BDG, n-hexyl diethylene glycol, n-hexyl ethylene glycol and dipropylene glycol monomethyl ether were used as the glycol ethers, respectively. The remainder was water.
TABLE 6
The results in Table 6 show that the combination of different solvents (especially glycol ethers) will lead to different TiN and Co/CuE/R.
Thus, good protection of TiN E/R and Cu/Co/Ru can be achieved if the appropriate combination of solvents is used.
From the results in the above table, it can be seen that the composition used allows control of the etch rate ratio of TiN and Co and/or Cu and/or Ru.
In this disclosure, the words "a" or "an" should be taken to include both the singular and the plural. Conversely, any reference to plural items shall, where appropriate, include the singular.
From the foregoing, it will be observed that numerous modifications and variations can be effectuated without departing from the true spirit and scope of the novel concepts of the present disclosure. It is to be understood that no limitation with respect to the specific embodiments or examples illustrated is intended or should be inferred. The disclosure is intended to cover by the appended claims all such modifications as fall within the scope of the claims.
Claims (18)
1. A composition, comprising:
a) an organic amine;
b) one or more inhibitors;
c) one or more buffering agents;
d) an activator;
e) one or more glycol ethers;
f) optionally an aprotic solvent; and
g) and (3) water.
2. The composition of claim 1, wherein the organic amine can be selected from the group consisting of: 1-methylimidazole; imidazole; pyrazole; 4-acetylmorpholine; n-formyl morpholine; 1,3, 5-tris (dimethylaminopropyl) -s-hexahydrotriazine; 4-methylpyridine N-oxide; 2-methylpyridine N-oxide; 4-methoxypyridine N-oxide hydrate; 4-chloropyridine N-oxide; 8-methylquinoline N-oxide; 1-dodecylamine, N-dimethyl-N-oxide; 4-methylmorpholine-4-oxide; 1-tetradecylamine, N-dimethyl-N-oxide; (C10-C16) alkyldimethylamine oxides; (C12-18) alkyldimethyl-N-oxide; pyridine 1-oxide; decylamine, N-dimethyl-N-oxide; hexadecylamine, N-dimethyl-N-oxide, preferably the organic amine can be selected from 4-methylmorpholine 4-oxide and 1,3, 5-tris (dimethylaminopropyl) -s-hexahydrotriazine.
3. The composition according to claim 2, wherein the organic amine can be present in the composition in an amount ranging from 0.01 to 25 wt. -%, preferably from 0.1 to 15 wt. -%, based on the total weight of the composition.
4. The composition according to claim 1, wherein the inhibitor can be selected from the class of compounds known as polyethyleneimines (class a), azoles (class B) and derivatives thereof, wherein polyethyleneimines (class a) can be: BASF
FG. G20, G35, G100, PR8515, HF, P, PS, PO100, PN 50, PN 60, SK, and (B) azoles can be: histidine, adenosine, adenine; pyridine; indazoles; 2,2' -bipyridine; 4,4 '-bis (chloromethyl) -2,2' -bipyridine; 1,2, 3-triazole; 1,2, 4-triazole; tetrazole; pentazole, 1,3, 4-oxadiazole; oxadiazole, 1,2, 3-oxadiazole; 1,2, 5-oxadiazole; 1,2, 4-oxadiazole; a thiazole; 1,2, 3-thiadiazole; 1,2, 4-thiadiazole; 1,2, 5-thiadiazole; 1,3, 4-thiadiazole; benzotriazole (BTA); 5-alkylbenzotriazoles (alkyl ═ C)nH2n+1Wherein n is 1-6); 6-alkylbenzotriazoles (alkyl ═ C)nH2n+1Wherein n is 1-6); 5-amino-benzotriazole; 6-amino-benzotriazole; 1- (methoxymethyl) -1H-benzotriazole; 1H-benzotriazole-1-methanol; 1- (chloromethyl) -1H-benzotriazole; 5-phenyl-benzotriazole; n, N-bis (2-ethylhexyl) -4-methyl-1H-benzotriazole-1-methylamine; n, N-bis (2-ethylhexyl) -5-methyl-1H-benzotriazole-1-methanamine; 2,2' - [ [ (5-methyl-1H-benzotriazol-1-yl) methyl]Imino radical](ii) a bisethanol; 5-nitro-benzotriazole; benzotriazole carboxylic acids; 1-amino-1, 2, 4-triazole; hydroxybenzotriazole; 2- (5-amino-pentyl) -benzotriazole; 1-amino-1, 2, 3-triazole; 1-amino-5-methyl-1, 2, 3-triazole; 3-amino-1, 2, 4-triazole; 5-amino-1, 2, 4-triazole; 3-isopropyl-1, 2, 4-triazole; 3, 5-diamino-1, 2, 4-triazole; 5-thiophenyl-benzotriazole; 5-halo-benzotriazole (halo ═ F, Cl, Br, or I); 6-halo-benzotriazole (halo ═ F, Cl, Br, or I); a naphthotriazole; 4-methyl-2-phenylimidazole; 5-aminotetrazole; pentylenetetrazole; 5-phenyl-1H-tetrazole; 5-benzyl-1H-tetrazole; 5-methyl groupTetrazole; 2-benzylpyridine; 2, 4-diamino-6-methyl-1, 3, 5-triazine; methyl tetrazole; an imidazolinone; 1, 5-pentamethylenetetrazole; imidazolinethiones; 4-amino-4H-1, 2, 4-triazole; benzothiazole; a benzimidazole.
5. The composition according to claim 4, wherein the inhibitor can be present in the composition in an amount ranging from 0.01 to 6 wt. -%, preferably from 0.5 to 2 wt. -%, based on the total weight of the composition.
6. The composition of claim 1, wherein the buffering agent can be selected from the group consisting of: ammonium hydroxide; phosphoric acid; tetramethylammonium hydroxide (TMAH); tetraethylammonium hydroxide (TEAH); tetrabutylammonium hydroxide; methanolamine (MEA); ethanolamine (DEA); triethanolamine (TEA); polyethylene glycol amine; diglycolamine; triglycolamine; 1,3, 5-tris (dimethylaminopropyl) -s-hexahydrotriazine.
7. The composition according to claim 6, wherein the buffering agent can be present in the composition of the invention in an amount ranging from 0.01 to 5 wt. -%, preferably from 0.5 to 2 wt. -%, based on the total weight of the composition.
8. The composition of claim 1, wherein the activator can be selected from the group consisting of: ammonium methanesulfonate; ammonium dihydrogen phosphate ((NH)4)H2PO4) (ii) a Diammonium phosphate (diammonium phosphate, (NH)4)2HPO4) (ii) a Ammonium phosphate ((NH)4)3PO4) (ii) a Triammonium citrate; ammonium acetate; ammonium ethylene diamine tetraacetate; ethylenediaminetetraacetic acid tetraammonium; trans-1, 2-cyclohexylidene tetraacethyl tetraacetic acid tetraammonium; ammonium diethylenetriaminepentaacetate; hydroxyethyl ethylenediamine triacetic acid ammonium; ammonium methylglycine diacetate; nitrilotriacetic acid triammonium salt; ammonium persulfate; ammonium sulfate; ammonium carbonate; ammonium nitrate; ammonium biborate; ammonium carbamate; ammonium fluoride; ammonium hexafluorosilicate; ammonium hexafluorotitanate; ammonium metatungstate; ammonium pentaborate; ammonium tetrafluoroborate; ammonium triflate; trans form-tetramethylammonium 1, 2-cyclohexylidenedinitrilo-tetraacetate; tetramethylammonium ethylene diamine tetraacetate.
9. The composition according to claim 8, wherein the activator can be present in the composition of the invention in an amount ranging from 0.01 to 3 wt%, preferably from 0.1 to 1 wt%, based on the total weight of the composition.
10. The composition of claim 1, wherein the glycol ether can be selected from the following: butyl Glycol (BG), Butyl Diglycol (BDG), butyl triglycol, n-hexyl diglycol, n-hexyl glycol, 2-hexyloxy-1-ethanol, tetrahydrofurfuryl alcohol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monopropyl ether, diethylene glycol monoisopropyl ether, diethylene glycol monobutyl ether, diethylene glycol monoisobutyl ether, diethylene glycol monobenzyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, triethylene glycol monomethyl ether, triethylene glycol dimethyl ether, polyethylene glycol monomethyl ether, diethylene glycol methyl ether, triethylene glycol monomethyl ether acetate, ethylene glycol monoethyl ether acetate, propylene glycol monomethyl ether, propylene glycol dimethyl ether, propylene glycol monobutyl ether, propylene glycol, monopropyl ether, dipropylene glycol monomethyl ether, Dipropylene glycol monopropyl ether, dipropylene glycol monoisopropyl ether, dipropylene glycol monobutyl ether, dipropylene glycol diisopropyl ether, tripropylene glycol monomethyl ether, 1-methoxy-2-butanol, 2-methoxy-1-butanol, 2-methoxy-2-methylbutanol, 1-dimethoxyethane, and 2- (2-butoxyethoxy) ethanol.
11. The composition according to claim 10, wherein the glycol ether can be present in the composition of the invention in an amount ranging from 1 to 60 wt. -%, preferably from 10 to 50 wt. -%, based on the total weight of the composition.
12. The composition of claim 1, wherein the aprotic solvent can be selected from the group consisting of: dimethyl sulfoxide (DMSO), sulfolane, propylene carbonate, dimethylacetamide (DMAc), N-methyl-2-pyrrolidone (NMP), Dimethylformamide (DMF), or mixtures thereof.
13. The composition according to claim 12, wherein the aprotic solvent, when present, can be present in the composition of the invention in an amount ranging from 1 to 50 wt%, preferably from 5 to 25 wt%, based on the total weight of the composition.
14. Use of a composition according to any one of claims 1 to 13 in combination with an oxidant for modulating the etch rate of Cu/Co/Ru and TiN and/or removing organic and/or inorganic residues.
15. Use according to claim 14, wherein the oxidizing agent can be selected from hydrogen peroxide (H)2O2) Ozone water, persulfuric acid, preferably hydrogen peroxide.
16. Use according to claim 14, wherein the oxidizing agent can be added in a volume ratio (volume ratio of the composition comprising components a) to g) ranging from 65:1 to 1:5 (about 0.51 to 26.2 wt%), preferably from 33:1 to 1:2 (about 1 to 21.3 wt%), most preferably from 22:1 to 1:1 (about 1.5 to 16.2 wt%) to the oxidizing agent.
17. A kit, comprising:
a composition according to any one of claims 1 to 13; and
an oxidizing agent.
18. The kit of claim 17, wherein the oxidizing agent can be selected from hydrogen peroxide (H)2O2) Ozone water, persulfuric acid, preferably hydrogen peroxide.
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