CN110541191B - 单晶硅的制造方法、外延硅晶片、以及单晶硅基板 - Google Patents

单晶硅的制造方法、外延硅晶片、以及单晶硅基板 Download PDF

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Publication number: CN110541191B
Authority: CN; China
Prior art keywords: crystal; single crystal; raw material; nitrogen; material melt
Prior art date: 2018-05-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Active

Application number

CN201910458568.0A

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English (en)

Chinese (zh)

Other versions

CN110541191A (zh

Inventor

菅原孝世

星亮二

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Shin Etsu Handotai Co Ltd

Original Assignee

Shin Etsu Handotai Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2018-05-29

Filing date

2019-05-29

Publication date

2022-08-09

2019-05-29 Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd

2019-12-06 Publication of CN110541191A publication Critical patent/CN110541191A/zh

2022-08-09 Application granted granted Critical

2022-08-09 Publication of CN110541191B publication Critical patent/CN110541191B/zh

Status Active legal-status Critical Current

2039-05-29 Anticipated expiration legal-status Critical

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XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 88
229910052710 silicon Inorganic materials 0.000 title claims abstract description 88
239000010703 silicon Substances 0.000 title claims abstract description 88
238000004519 manufacturing process Methods 0.000 title claims abstract description 41
229910021421 monocrystalline silicon Inorganic materials 0.000 title claims description 122
239000000758 substrate Substances 0.000 title abstract description 78
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 339
229910052757 nitrogen Inorganic materials 0.000 claims abstract description 175
239000013078 crystal Substances 0.000 claims abstract description 169
238000000034 method Methods 0.000 claims abstract description 81
230000002093 peripheral effect Effects 0.000 claims abstract description 33
238000005204 segregation Methods 0.000 claims abstract description 23
239000002994 raw material Substances 0.000 claims description 94
239000007788 liquid Substances 0.000 claims description 63
239000010453 quartz Substances 0.000 claims description 13
VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
230000008569 process Effects 0.000 abstract description 30
238000005247 gettering Methods 0.000 abstract description 25
238000001556 precipitation Methods 0.000 abstract description 12
229910021419 crystalline silicon Inorganic materials 0.000 abstract description 5
230000007547 defect Effects 0.000 description 113
235000012431 wafers Nutrition 0.000 description 89
125000004429 atom Chemical group 0.000 description 69
230000000052 comparative effect Effects 0.000 description 69
230000012010 growth Effects 0.000 description 34
238000010438 heat treatment Methods 0.000 description 32
238000009826 distribution Methods 0.000 description 28
230000007423 decrease Effects 0.000 description 13
238000011156 evaluation Methods 0.000 description 13
230000008859 change Effects 0.000 description 12
239000007789 gas Substances 0.000 description 11
230000015572 biosynthetic process Effects 0.000 description 9
230000000694 effects Effects 0.000 description 9
238000010586 diagram Methods 0.000 description 7
238000009792 diffusion process Methods 0.000 description 7
239000000155 melt Substances 0.000 description 7
239000000047 product Substances 0.000 description 7
230000003247 decreasing effect Effects 0.000 description 6
230000003111 delayed effect Effects 0.000 description 6
239000010410 layer Substances 0.000 description 6
239000002245 particle Substances 0.000 description 6
238000000790 scattering method Methods 0.000 description 6
230000007935 neutral effect Effects 0.000 description 5
230000005855 radiation Effects 0.000 description 5
230000009467 reduction Effects 0.000 description 5
YJLUBHOZZTYQIP-UHFFFAOYSA-N 2-[5-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-1,3,4-oxadiazol-2-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1=NN=C(O1)CC(=O)N1CC2=C(CC1)NN=N2 YJLUBHOZZTYQIP-UHFFFAOYSA-N 0.000 description 4
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
229910002804 graphite Inorganic materials 0.000 description 4
239000010439 graphite Substances 0.000 description 4
239000012535 impurity Substances 0.000 description 4
238000002844 melting Methods 0.000 description 4
239000002184 metal Substances 0.000 description 4
229910052751 metal Inorganic materials 0.000 description 4
KZEVSDGEBAJOTK-UHFFFAOYSA-N 1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-2-[5-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]-1,3,4-oxadiazol-2-yl]ethanone Chemical compound N1N=NC=2CN(CCC=21)C(CC=1OC(=NN=1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)=O KZEVSDGEBAJOTK-UHFFFAOYSA-N 0.000 description 3
LDXJRKWFNNFDSA-UHFFFAOYSA-N 2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound C1CN(CC2=NNN=C21)CC(=O)N3CCN(CC3)C4=CN=C(N=C4)NCC5=CC(=CC=C5)OC(F)(F)F LDXJRKWFNNFDSA-UHFFFAOYSA-N 0.000 description 3
WZFUQSJFWNHZHM-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)N1CC2=C(CC1)NN=N2 WZFUQSJFWNHZHM-UHFFFAOYSA-N 0.000 description 3
JQMFQLVAJGZSQS-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-N-(2-oxo-3H-1,3-benzoxazol-6-yl)acetamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)NC1=CC2=C(NC(O2)=O)C=C1 JQMFQLVAJGZSQS-UHFFFAOYSA-N 0.000 description 3
DFGKGUXTPFWHIX-UHFFFAOYSA-N 6-[2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]acetyl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)C1=CC2=C(NC(O2)=O)C=C1 DFGKGUXTPFWHIX-UHFFFAOYSA-N 0.000 description 3
238000000227 grinding Methods 0.000 description 3
230000006872 improvement Effects 0.000 description 3
230000008018 melting Effects 0.000 description 3
239000004065 semiconductor Substances 0.000 description 3
OHVLMTFVQDZYHP-UHFFFAOYSA-N 1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-2-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]ethanone Chemical compound N1N=NC=2CN(CCC=21)C(CN1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)=O OHVLMTFVQDZYHP-UHFFFAOYSA-N 0.000 description 2
HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 2
YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 2
CONKBQPVFMXDOV-QHCPKHFHSA-N 6-[(5S)-5-[[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]methyl]-2-oxo-1,3-oxazolidin-3-yl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C[C@H]1CN(C(O1)=O)C1=CC2=C(NC(O2)=O)C=C1 CONKBQPVFMXDOV-QHCPKHFHSA-N 0.000 description 2
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
238000002425 crystallisation Methods 0.000 description 2
230000008025 crystallization Effects 0.000 description 2
150000002829 nitrogen Chemical class 0.000 description 2
230000003647 oxidation Effects 0.000 description 2
238000007254 oxidation reaction Methods 0.000 description 2
230000001590 oxidative effect Effects 0.000 description 2
238000007711 solidification Methods 0.000 description 2
230000008023 solidification Effects 0.000 description 2
239000002344 surface layer Substances 0.000 description 2
230000007704 transition Effects 0.000 description 2
238000011282 treatment Methods 0.000 description 2
230000003313 weakening effect Effects 0.000 description 2
QJGQUHMNIGDVPM-BJUDXGSMSA-N Nitrogen-13 Chemical compound [13N] QJGQUHMNIGDVPM-BJUDXGSMSA-N 0.000 description 1
238000004220 aggregation Methods 0.000 description 1
230000002776 aggregation Effects 0.000 description 1
229910052786 argon Inorganic materials 0.000 description 1
QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
150000001875 compounds Chemical class 0.000 description 1
230000002542 deteriorative effect Effects 0.000 description 1
239000002019 doping agent Substances 0.000 description 1
238000002474 experimental method Methods 0.000 description 1
230000002349 favourable effect Effects 0.000 description 1
238000010348 incorporation Methods 0.000 description 1
239000011261 inert gas Substances 0.000 description 1
238000005259 measurement Methods 0.000 description 1
150000002739 metals Chemical class 0.000 description 1
230000021332 multicellular organism growth Effects 0.000 description 1
125000004433 nitrogen atom Chemical group N* 0.000 description 1
239000001301 oxygen Substances 0.000 description 1
229910052760 oxygen Inorganic materials 0.000 description 1
229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
238000012805 post-processing Methods 0.000 description 1
239000002244 precipitate Substances 0.000 description 1
238000001314 profilometry Methods 0.000 description 1
230000001737 promoting effect Effects 0.000 description 1
238000010926 purge Methods 0.000 description 1
230000002040 relaxant effect Effects 0.000 description 1
238000011160 research Methods 0.000 description 1
238000004904 shortening Methods 0.000 description 1
230000001629 suppression Effects 0.000 description 1
238000012546 transfer Methods 0.000 description 1

Images

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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Engineering & Computer Science (AREA)
Chemical & Material Sciences (AREA)
Crystallography & Structural Chemistry (AREA)
Manufacturing & Machinery (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Thermal Sciences (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

CN201910458568.0A 2018-05-29 2019-05-29 单晶硅的制造方法、外延硅晶片、以及单晶硅基板 Active CN110541191B (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2018102016A JP6927150B2 (ja)	2018-05-29	2018-05-29	シリコン単結晶の製造方法
JP2018-102016		2018-05-29

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Publication Number	Publication Date
CN110541191A CN110541191A (zh)	2019-12-06
CN110541191B true CN110541191B (zh)	2022-08-09

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CN201910458568.0A Active CN110541191B (zh)	2018-05-29	2019-05-29	单晶硅的制造方法、外延硅晶片、以及单晶硅基板

Country Status (3)

Country	Link
JP (1)	JP6927150B2 (ja)
KR (1)	KR102676990B1 (ja)
CN (1)	CN110541191B (ja)

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Publication number	Priority date	Publication date	Assignee	Title
CN113862791A (zh) *	2021-09-28	2021-12-31	西安奕斯伟材料科技有限公司	一种用于拉制单晶硅棒的拉晶炉
CN113897671B (zh) *	2021-09-30	2023-05-05	西安奕斯伟材料科技股份有限公司	一种氮掺杂单晶硅棒的制备方法
CN115404539A (zh) *	2022-08-30	2022-11-29	西安奕斯伟材料科技有限公司	直拉法拉制单晶硅棒的方法、单晶硅棒、硅片及外延硅片
CN115574722B (zh) *	2022-11-04	2024-03-29	中国计量科学研究院	一种自溯源干涉式位移传感器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2002015253A1 (fr) *	2000-08-11	2002-02-21	Shin-Etsu Handotai Co., Ltd.	Procede de fabrication d'une tranche de silicium
WO2008029579A1 (fr) *	2006-09-05	2008-03-13	Shin-Etsu Handotai Co., Ltd.	Tranche de silicium monocristallin et procédé de fabrication associé
CN101198727A (zh) *	2005-06-20	2008-06-11	胜高股份有限公司	硅单晶的生长方法及硅晶片的制造方法
JP2015107898A (ja) *	2013-12-05	2015-06-11	株式会社Sumco	シリコン単結晶の育成方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH1179889A (ja)	1997-07-09	1999-03-23	Shin Etsu Handotai Co Ltd	結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ
JP2000016897A (ja)	1998-07-03	2000-01-18	Sumitomo Metal Ind Ltd	高品質シリコン単結晶の製造方法
JP3692812B2 (ja)	1998-06-04	2005-09-07	信越半導体株式会社	窒素ドープした低欠陥シリコン単結晶ウエーハおよびその製造方法
JP4358333B2 (ja)	1998-11-20	2009-11-04	ＳｕｍｃｏＴｅｃｈｘｉｖ株式会社	シリコン単結晶の製造方法
JP3601328B2 (ja)	1998-12-14	2004-12-15	信越半導体株式会社	シリコン単結晶の製造方法およびこの方法で製造されたシリコン単結晶とシリコンウエーハ
JP3787472B2 (ja)	1999-11-12	2006-06-21	信越半導体株式会社	シリコンウエーハおよびその製造方法ならびにシリコンウエーハの評価方法
WO2002000969A1 (fr)	2000-06-26	2002-01-03	Shin-Etsu Handotai Co., Ltd	Procede de fabrication d'une tranche de silicium et d'une tranche epitaxiale ;tranche epitaxiale
JP3624827B2 (ja) *	2000-12-20	2005-03-02	三菱住友シリコン株式会社	シリコン単結晶の製造方法
JP4715402B2 (ja)	2005-09-05	2011-07-06	株式会社Ｓｕｍｃｏ	単結晶シリコンウェーハの製造方法、単結晶シリコンウェーハ及びウェーハ検査方法
JP6135611B2 (ja)	2014-07-03	2017-05-31	信越半導体株式会社	点欠陥濃度計算方法、Ｇｒｏｗｎ−ｉｎ欠陥計算方法、Ｇｒｏｗｎ−ｉｎ欠陥面内分布計算方法及びこれらを用いたシリコン単結晶製造方法

2018
- 2018-05-29 JP JP2018102016A patent/JP6927150B2/ja active Active
2019
- 2019-04-18 KR KR1020190045181A patent/KR102676990B1/ko active IP Right Grant
- 2019-05-29 CN CN201910458568.0A patent/CN110541191B/zh active Active

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2002015253A1 (fr) *	2000-08-11	2002-02-21	Shin-Etsu Handotai Co., Ltd.	Procede de fabrication d'une tranche de silicium
CN101198727A (zh) *	2005-06-20	2008-06-11	胜高股份有限公司	硅单晶的生长方法及硅晶片的制造方法
WO2008029579A1 (fr) *	2006-09-05	2008-03-13	Shin-Etsu Handotai Co., Ltd.	Tranche de silicium monocristallin et procédé de fabrication associé
JP2015107898A (ja) *	2013-12-05	2015-06-11	株式会社Sumco	シリコン単結晶の育成方法

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