CN110531546A - The cutting method and the hand-written film of liquid crystal of the hand-written film of liquid crystal - Google Patents
The cutting method and the hand-written film of liquid crystal of the hand-written film of liquid crystal Download PDFInfo
- Publication number
- CN110531546A CN110531546A CN201910684775.8A CN201910684775A CN110531546A CN 110531546 A CN110531546 A CN 110531546A CN 201910684775 A CN201910684775 A CN 201910684775A CN 110531546 A CN110531546 A CN 110531546A
- Authority
- CN
- China
- Prior art keywords
- liquid crystal
- hand
- cut
- film
- basement membrane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133351—Manufacturing of individual cells out of a plurality of cells, e.g. by dicing
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Nonlinear Science (AREA)
- Manufacturing & Machinery (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Liquid Crystal (AREA)
Abstract
The present invention discloses a kind of cutting method of hand-written film of liquid crystal, and the cutting method of the hand-written film of the liquid crystal is that the liquid crystal film of monolith is cut into multiple hand-written films of pre-set dimension liquid crystal separated independently of each other;Preset distance is deviated along the hand-written film surrounding of the pre-set dimension liquid crystal, upper basement membrane conductive layer is cut off and forms a cutting line in upper membrane surface, the depth of cut of the cutting line is less than the thickness of upper basement membrane.The present invention is by cutting off upper basement membrane conductive layer, so that the voltage of upper basement membrane conductive layer can not reach the hand-written film edge of liquid crystal, it solves when being cut to liquid crystal film, the problem of connection short circuit occurs for upper and lower basement membrane conductive layer, and since the depth of cut of upper basement membrane is less than the thickness of upper basement membrane, so that the liquid crystal leakage problem of the hand-written film of liquid crystal is resolved.
Description
Technical field
The present invention relates to liquid crystal handwriting pad technical field, in particular to the cutting method and liquid crystal hand of a kind of hand-written film of liquid crystal
Write film.
Background technique
In the hand-written film field of liquid crystal, in order to realize contrast and the higher person's handwriting effect of display brightness.Commonly way is
The ratio of liquid crystal and chiral agent in integral formula is promoted, while reducing polymer ratio in formula.But polymer content
The adhesion strength decline that can cause to upper and lower basement membrane conductive layer is reduced, the hand-written film finished product of liquid crystal is caused to be assembled into liquid crystal handwriting pad
Technical process in and be easy to appear in subsequent clients use process lower leaf situation on liquid crystal film.On the other hand, due to
The polymer content being clipped between two layers of conductive film in the hand-written film of liquid crystal is few, to the supporting role quilt of upper and lower basement membrane conductive layer
It reduces, so that the liquid crystal wound membrane of the entire volume prepared by roll-to-roll production technology is cut into calmly using laser cutting machine
When size processed, it is short-circuit that uncontrollable connection can occur due to decrease that polymer support acts on for upper and lower basement membrane conductive layer, so that
The hand-written film of custom-sized liquid crystal after laser cutting can not remove person's handwriting when carrying circuit drives or person's handwriting is removed not
Thoroughly, the production yield for greatly reducing the hand-written film of liquid crystal, improves cost.
In addition, further being promoted in cutting since the not perfect of cutting technique is also easy to keep short circuit phenomenon further serious
Produce fraction defective.In order to improve the generation of short circuit phenomenon, designer provides a variety of design schemes.For example, application No. is
The Chinese patent of CN201811623151.7 discloses a kind of liquid crystal diaphragm cutting method and finished product liquid crystal film piece.This method exists
Liquid crystal diaphragm is cut into after the finished product diaphragm of multiple pre-set dimensions, in the front or back of the diaphragm ontology, from described
Cutting again is carried out at the line pre-determined distance of finished product diaphragm edge and forms hemisection broken string, which breaks the finished product diaphragm
Upper film conductive layer, the cutting of one of lower film conductive layer so that the voltage of upper film conductive layer or lower film conductive layer can not reach
Liquid crystal diaphragm edge, so that upper film conductive layer, lower film conductive layer be not short-circuit.
It is above-mentioned in the prior art, although can make the hand-written film of liquid crystal not short-circuit to a certain extent, due to due to cutting side
Method is all to cut off upper basement membrane and upper basement membrane conductive layer, then removes leftover pieces, the liquid crystal in the hand-written film of liquid crystal is easy to cause to let out
Dew.Due to liquid crystal leakage, the supporting role of upper and lower basement membrane conductive layer is weakened, uncontrollable connection is still easy to happen
Short circuit.
Summary of the invention
The main object of the present invention is to propose a kind of cutting method of hand-written film of liquid crystal, it is intended to solve existing cutting method
When cutting to liquid crystal wound membrane, the problem of connection short circuit can occur for upper and lower basement membrane conductive layer and the hand-written film of liquid crystal is cut
Liquid crystal is easy the problem of leakage afterwards.
To achieve the above object, the present invention proposes a kind of cutting method of hand-written film of liquid crystal, the cutting of the hand-written film of the liquid crystal
Method includes:
Preferably, the liquid crystal film of monolith is cut into multiple hand-written films of pre-set dimension liquid crystal separated independently of each other;Along institute
The hand-written film surrounding offset preset distance of pre-set dimension liquid crystal is stated, upper basement membrane conductive layer is cut off and forms one in upper membrane surface
Cutting line, the depth of cut of the cutting line are less than the thickness of upper basement membrane.
Preferably, the liquid crystal film of monolith is cut into multiple hand-written films of pre-set dimension liquid crystal separated independently of each other described
The step of in, cut using knife, cut, be punched, being cut by laser, the mode of ultrasonic cutting is cut into the pre-set dimension liquid crystal hand
Write film.
Preferably, preset distance is deviated along the hand-written film surrounding of pre-set dimension liquid crystal described, upper basement membrane conductive layer is cut off
And in the step of upper membrane surface forms a cutting line, and the depth of cut of the cutting line is less than the thickness of upper basement membrane, use
The mode of laser cutting cuts the hand-written film of pre-set dimension liquid crystal.
Preferably, in described the step of cutting the liquid crystal hand-written film by the way of laser cutting, using infrared waves
Section carbon dioxide laser machine, visible light wave range laser cutting machine or ultraviolet band laser cutting machine cut the pre-set dimension liquid crystal
Hand-written film.
Preferably, the cutting line at a distance from the hand-written film edge of the pre-set dimension liquid crystal for 0.01mm~
50mm。
The invention also provides a kind of hand-written film of liquid crystal, the upper basement membrane conductive layer of the hand-written film of liquid crystal is cut off and upper basement membrane
Surface is formed with a cutting line, and the depth of the cutting line is less than the thickness of upper basement membrane.
Preferably, the cutting line is 0.01mm~50mm at a distance from the hand-written film edge of the liquid crystal.
The beneficial effects of the present invention are: present invention employs the methods of substep cutting, are first cut into liquid crystal film default
Then the hand-written film of sized liquid crystal deviates preset distance in the hand-written film edge of liquid crystal, upper basement membrane conductive layer is cut off, so that on
The voltage of basement membrane conductive layer can not reach the hand-written film edge of liquid crystal, to solve basement membrane conductive layer and lower basement membrane conductive layer exists
Connection short circuit problem when cutting, improves the production yield of the hand-written film of liquid crystal, reduces costs;In addition, hand-written to liquid crystal
When being cut on the inside of film edge, it is greater than upper basement membrane to spy using absorption rate of the upper basement membrane conductive layer to specific laser
The characteristic of the absorption rate of laser is determined, by adjusting the cutting power of cutting machine, frequency, optical wavelength, impulse waveform, hot spot ruler
The parameters such as very little, rate of cutting, under the premise of upper basement membrane conductive layer is cut off, the depth of cut of upper basement membrane is less than the thickness of upper basement membrane
Degree does not cut off basement membrane and the liquid crystal of the hand-written film of liquid crystal is in by package status, can block the leakage of liquid crystal, improve production
Quality.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the hand-written film of liquid crystal in one embodiment of the invention;
Fig. 2 is the flow diagram of the cutting method of the hand-written film of liquid crystal in one embodiment of the invention;
Fig. 3 is the schematic cross-section of the hand-written film of liquid crystal in one embodiment of the invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, carries out clear and complete retouch to the scheme in the embodiment of the present invention
It states, it is clear that described embodiment is only a part of the embodiment in the present invention, instead of all the embodiments.Based on this hair
Embodiment in bright, every other implementation obtained by those of ordinary skill in the art without making creative efforts
Example, shall fall within the protection scope of the present invention.
The present invention proposes a kind of cutting method of hand-written film of liquid crystal, referring to figs. 1 to Fig. 3, the cutting side of the hand-written film of the liquid crystal
Method includes:
Step S1: the liquid crystal film of monolith is cut into multiple hand-written films 100 of the pre-set dimension liquid crystal separated independently of each other.In
In the embodiment of the present invention, liquid crystal film is the liquid crystal wound membrane that roll-to-roll mode produces;Including upper basement membrane 30, upper basement membrane conductive layer 40,
Liquid crystal pulp layer 50, lower basement membrane conductive layer 60 and lower basement membrane 70.It in this step, can be by cutting machine first by the liquid crystal of monolith
Film is cut into multiple hand-written films 100 of the pre-set dimension liquid crystal separated independently of each other.Infrared band carbon dioxide can not only be used
Laser machine, visible light wave range laser cutting machine, ultraviolet band laser cutting machine, can also be cut using knife, cut, be punched, ultrasound
The hand-written film 100 of liquid crystal that liquid crystal film is cut into pre-set dimension by the modes such as wave cutting.
Step S2: preset distance is deviated along hand-written 100 edge 10 of film of pre-set dimension liquid crystal, by upper basement membrane conductive layer 40
It cuts off and forms a cutting line 20 on upper 30 surface of basement membrane, the depth of cut h of the cutting line 20 is less than the thickness H of upper basement membrane.
In this step, the inside that machine can be cut by laser along the hand-written film edge 10 of pre-set dimension liquid crystal is conductive by upper basement membrane
40 cutting of layer simultaneously forms a cutting line 20 on upper 30 surface of basement membrane, and the depth of cut h for controlling cutting line is less than the thickness of upper basement membrane
Spend H.Since upper basement membrane conductive layer 30 is cut off, so that voltage can not reach the hand-written film frontside edge of liquid crystal, to solve base
The connection short circuit problem of film conductive layer 40 and lower basement membrane conductive layer 60 in cutting;And it does not cut off basement membrane 30 and can make liquid crystal
The liquid crystal of hand-written film 100 is in by package status, is prevented the leakage of liquid crystal, is improved the production yield of the hand-written film 100 of liquid crystal.
In abovementioned steps S2, since absorption rate of the upper basement membrane conductive layer 40 to specific laser is greater than 30 couples of spies of upper basement membrane
The absorption rate for determining laser, can be by adjusting the cutting power of cutting machine, frequency, light wave when cutting upper basement membrane conductive layer 40
The parameters such as length, impulse waveform, spot size, rate of cutting, so that the depth of cut h of upper basement membrane 30 is controlled, so that depth of cut h
It is cut off less than the thickness H of upper basement membrane, and by upper basement membrane conductive layer 40.The depth of cut h for controlling cutting line 20 is less than upper basement membrane
Thickness H, the liquid crystal in the hand-written film 100 of liquid crystal are wrapped in by upper basement membrane 30 and lower basement membrane 70, solve in existing cutting method
Liquid crystal is easy the problem of leakage, ensure that the quality of production of the hand-written film 100 of liquid crystal, due to cutting off upper basement membrane conductive layer 40, so that
Voltage can not be passed to the hand-written film edge 10 of liquid crystal by upper basement membrane conductive layer 40, so that upper basement membrane conductive layer 40 and lower basement membrane are conductive
Layer 60 is not in the problem of connection short circuit, improves the production yield of the hand-written film 100 of liquid crystal.
A kind of cutting method of the hand-written film of liquid crystal proposed by the present invention, referring to Fig.1, in abovementioned steps S1, cut using knife,
It cuts, punching, be cut by laser, the mode of ultrasonic cutting is cut into the hand-written film 100 of pre-set dimension liquid crystal.In the present invention not only
Infrared band carbon dioxide laser machine, visible light wave range laser cutting machine, ultraviolet band laser cutting machine can be used, it can be with
It is cut using knife, cuts, is punched, the various ways such as ultrasonic cutting are cut into the hand-written film 100 of complete pre-set dimension liquid crystal, institute
The hand-written film 100 of the liquid crystal being cut into can be applied to liquid crystal handwriting pad.
The cutting method of the hand-written film of a kind of liquid crystal proposed by the present invention, referring to Fig.1, in abovementioned steps S2, using laser
The mode of cutting cuts the hand-written film 100 of pre-set dimension liquid crystal.The mode being wherein cut by laser includes that infrared band carbon dioxide swashs
Ray machine, visible light wave range laser cutting machine or ultraviolet band laser cutting machine.Preferred visible light wave range in embodiments of the present invention
Laser cutting machine or ultraviolet band laser cutting machine.Laser cutting machine utilizes the hand-written film of high energy density laser beam irradiating liquid crystal
100, it can effectively improve processing efficiency by accurately controlling laser beam and obtain accurate processing result, than traditional cutting
Mode is high-efficient, joint-cutting is narrow, and joint-cutting is small can to make the smoother beauty in 30 surface of basement membrane, also basement membrane 30 can be allowed to wrap liquid crystal
Layer 50, prevents liquid crystal leakage.The wavelength of visible light wave range laser cutting machine and ultraviolet band laser cutting machine is short, cuts than long wavelength
Cutting mill has higher cutting accuracy, can more accurately cut the hand-written film 100 of liquid crystal.
The present invention proposes a kind of cutting method of hand-written film of liquid crystal, and referring to Fig.1, cutting line 20 and pre-set dimension liquid crystal are hand-written
The distance of film edge 10 is 0.01mm~50mm, can be realized accurate cutting.
The present invention also proposes a kind of hand-written film of liquid crystal, and referring to Fig. 3, the hand-written film 100 of liquid crystal includes upper basement membrane 30, upper conductive layer
40, the upper basement membrane conductive layer 40 of liquid crystal layer 50, lower conductiving layer 60 and lower basement membrane 70, the hand-written film 100 of liquid crystal is cut off and upper basement membrane 30
Surface is formed with a cutting line 20, and the depth h of the cutting line is less than the thickness H of upper basement membrane.Due to upper 40 quilt of basement membrane conductive layer
Cutting, so that voltage can not reach the hand-written film edge 10 of liquid crystal, to solve basement membrane conductive layer 40 and lower basement membrane conductive layer
60 cutting when connection short circuit problem, and do not cut off basement membrane 30 can make the hand-written film 100 of liquid crystal liquid crystal be in wrapped
State is wrapped up in, the leakage of liquid crystal has been blocked, improves the production yield of the hand-written film 100 of liquid crystal.
The present invention proposes that a kind of hand-written film of liquid crystal, cutting line 20 are at a distance from the hand-written film edge 10 of the liquid crystal
0.01mm~50mm can be realized accurate cutting.
Above-described is only part or preferred embodiment of the invention, therefore either text or attached drawing cannot all limit
The scope of protection of the invention processed utilizes description of the invention and accompanying drawing content under all designs with an entirety of the invention
Made equivalent structure transformation, or direct/indirect other related technical areas that are used in are included in the model that the present invention protects
In enclosing.
Claims (7)
1. a kind of cutting method of the hand-written film of liquid crystal, the hand-written film of liquid crystal includes upper basement membrane, upper basement membrane conductive layer, liquid crystal slurry
Layer, lower basement membrane conductive layer and lower basement membrane, which is characterized in that the cutting method includes:
The liquid crystal film of monolith is cut into multiple hand-written films of pre-set dimension liquid crystal separated independently of each other;
Preset distance is deviated along the hand-written film surrounding of the pre-set dimension liquid crystal, upper basement membrane conductive layer is cut off and in upper membrane surface
A cutting line is formed, the depth of cut of the cutting line is less than the thickness of upper basement membrane.
2. the cutting method of the hand-written film of liquid crystal according to claim 1, which is characterized in that in the liquid crystal film by monolith
In the step of being cut into multiple pre-set dimension liquid crystal separated independently of each other hand-written film, is cut, cut using knife, is punched, laser is cut
It cuts, the mode of ultrasonic cutting is cut into the hand-written film of pre-set dimension liquid crystal.
3. the cutting method of the hand-written film of liquid crystal according to claim 1, which is characterized in that described along pre-set dimension liquid crystal
Hand-written film surrounding deviates preset distance, and upper basement membrane conductive layer is cut off and forms a cutting line, the cutting in upper membrane surface
The depth of cut of line was less than in the step of thickness of upper basement membrane, and the pre-set dimension liquid crystal hand is cut by the way of laser cutting
Write film.
4. the cutting method of the hand-written film of liquid crystal according to claim 3, which is characterized in that in the use laser cutting
Mode was cut in the step of pre-set dimension liquid crystal hand-written film, using infrared band carbon dioxide laser machine, visible light wave range
Laser cutting machine or ultraviolet band laser cutting machine cut the hand-written film of pre-set dimension liquid crystal.
5. the cutting method of the hand-written film of liquid crystal according to any one of claim 1 to 4, which is characterized in that the cutting
Line is 0.01mm~50mm at a distance from the hand-written film edge of the pre-set dimension liquid crystal.
6. a kind of hand-written film of liquid crystal, the hand-written film of liquid crystal includes upper basement membrane, upper conductive layer, liquid crystal layer, lower conductiving layer and lower base
Film, which is characterized in that the upper basement membrane conductive layer of the hand-written film of liquid crystal is cut off and upper membrane surface is formed with a cutting line, should
The depth of cutting line is less than the thickness of upper basement membrane.
7. the hand-written film of liquid crystal according to claim 6, which is characterized in that the cutting line and the hand-written film surrounding of the liquid crystal
The distance at edge is 0.01mm~50mm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910684775.8A CN110531546B (en) | 2019-07-26 | 2019-07-26 | Cutting method of liquid crystal handwriting film and liquid crystal handwriting film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910684775.8A CN110531546B (en) | 2019-07-26 | 2019-07-26 | Cutting method of liquid crystal handwriting film and liquid crystal handwriting film |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110531546A true CN110531546A (en) | 2019-12-03 |
CN110531546B CN110531546B (en) | 2021-11-26 |
Family
ID=68660553
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910684775.8A Active CN110531546B (en) | 2019-07-26 | 2019-07-26 | Cutting method of liquid crystal handwriting film and liquid crystal handwriting film |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN110531546B (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111308756A (en) * | 2019-12-20 | 2020-06-19 | 章思 | Half-cut liquid crystal film and processing method thereof |
CN114248010A (en) * | 2020-09-25 | 2022-03-29 | 广东大族粤铭激光集团股份有限公司 | Liquid crystal part and laser cutting method thereof |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003273490A (en) * | 2002-03-12 | 2003-09-26 | Sharp Corp | Board-joining structure and electronic equipment having the same |
US8143530B1 (en) * | 2010-09-17 | 2012-03-27 | Endicott Interconnect Technologies, Inc. | Liquid crystal polymer layer for encapsulation and improved hermiticity of circuitized substrates |
CN107300818A (en) * | 2017-07-27 | 2017-10-27 | 山东蓝贝思特教装集团股份有限公司 | It is a kind of that there is liquid crystal laminated film of writing display function and preparation method thereof |
CN109407383A (en) * | 2018-12-28 | 2019-03-01 | 深圳市恒开源电子有限公司 | A kind of liquid crystal diaphragm cutting method and finished product liquid crystal film piece |
CN109581719A (en) * | 2019-01-30 | 2019-04-05 | 深圳市恒开源电子有限公司 | With via design can selective erase liquid crystal diaphragm and liquid crystal writing device |
-
2019
- 2019-07-26 CN CN201910684775.8A patent/CN110531546B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003273490A (en) * | 2002-03-12 | 2003-09-26 | Sharp Corp | Board-joining structure and electronic equipment having the same |
US8143530B1 (en) * | 2010-09-17 | 2012-03-27 | Endicott Interconnect Technologies, Inc. | Liquid crystal polymer layer for encapsulation and improved hermiticity of circuitized substrates |
CN107300818A (en) * | 2017-07-27 | 2017-10-27 | 山东蓝贝思特教装集团股份有限公司 | It is a kind of that there is liquid crystal laminated film of writing display function and preparation method thereof |
CN109407383A (en) * | 2018-12-28 | 2019-03-01 | 深圳市恒开源电子有限公司 | A kind of liquid crystal diaphragm cutting method and finished product liquid crystal film piece |
CN109581719A (en) * | 2019-01-30 | 2019-04-05 | 深圳市恒开源电子有限公司 | With via design can selective erase liquid crystal diaphragm and liquid crystal writing device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111308756A (en) * | 2019-12-20 | 2020-06-19 | 章思 | Half-cut liquid crystal film and processing method thereof |
CN111308756B (en) * | 2019-12-20 | 2024-03-22 | 章思 | Half-cut liquid crystal film and processing method |
CN114248010A (en) * | 2020-09-25 | 2022-03-29 | 广东大族粤铭激光集团股份有限公司 | Liquid crystal part and laser cutting method thereof |
Also Published As
Publication number | Publication date |
---|---|
CN110531546B (en) | 2021-11-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110531546A (en) | The cutting method and the hand-written film of liquid crystal of the hand-written film of liquid crystal | |
US5776220A (en) | Method and apparatus for breaking brittle materials | |
CN109759727A (en) | A kind of laser cutting method and system of frosted glass | |
US5961852A (en) | Laser scribe and break process | |
AU2001295797A1 (en) | Laser cutting method and apparatus for optical fibres or waveguides | |
CN101615664A (en) | Lug processing method | |
SG10201900165XA (en) | Wafer producing method and wafer producing apparatus | |
CN107863675A (en) | A kind of membrane structure for Slab Geometry Laser Resonator fully reflecting surface | |
CN105228790B (en) | Method for being divested crisp and hard material by means of laser emission | |
CN102837369B (en) | Process method for green laser scribing sapphire | |
CN103612015B (en) | A kind of LED wafer cutting method | |
CN108821562A (en) | A kind of cutting method of tempered glass | |
CN209647336U (en) | A kind of punching tool and punching tooling | |
CN204498369U (en) | Voice coil loudspeaker voice coil and be provided with the loud speaker of this voice coil loudspeaker voice coil | |
CN109623175B (en) | Phosphate glass laser cutting process | |
CN108406129A (en) | A kind of laser processing of hard brittle material | |
CN205967837U (en) | A tool for ferrite is radium -shine | |
CN113977700B (en) | Die-cutting piece preparation method capable of reducing glue pulling damage | |
CN103728691B (en) | Step Gauss compound Doped ions CONCENTRATION DISTRIBUTION gain fibre | |
CN112847465A (en) | Method for cutting and slicing solar cell | |
CN209729933U (en) | A kind of welding structure reducing the reflective loss of welding | |
CN104357648B (en) | A kind of laser shock peening method and device | |
CN109631637A (en) | Aluminium base ultrathin heat pipe and preparation method with super hydrophilic structure | |
CN207819170U (en) | Passive mode-locking green light pulse laser based on novel saturable absorber boron carbon nitrogen | |
CN203184837U (en) | Laser carving system for preparing CIGS thin film solar cells |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |