CN108321194A - A kind of SOI LIGBT with rapid turn off characteristic - Google Patents
A kind of SOI LIGBT with rapid turn off characteristic Download PDFInfo
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- CN108321194A CN108321194A CN201810113221.8A CN201810113221A CN108321194A CN 108321194 A CN108321194 A CN 108321194A CN 201810113221 A CN201810113221 A CN 201810113221A CN 108321194 A CN108321194 A CN 108321194A
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- 238000010276 construction Methods 0.000 claims abstract description 26
- 239000004020 conductor Substances 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 10
- 238000000605 extraction Methods 0.000 claims abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 3
- 210000002421 cell wall Anatomy 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000009825 accumulation Methods 0.000 abstract description 3
- 230000036039 immunity Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7394—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET on an insulating layer or substrate, e.g. thin film device or device isolated from the bulk substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention belongs to power semiconductor technologies fields, and in particular to a kind of SOI LIGBT with rapid turn off characteristic.The present invention is compared with traditional SOI LIGBT, cathode introduces the cathode can of connection cathode potential, cathode can extends to cathode p-well region or less, and cathode can is contacted close to anode construction side with P+ body contact zones, the anode slot structure of the conductive material of two high concentration p-types doping is introduced in anode tap simultaneously, conductive material connects anode potential；When device forward conduction, cathode hole accumulation slot provides a hole bypass for device, accumulates hole on cathode cell wall, keeps device latch-up immunity under big current density stronger, improve the anti-short circuit capability of device.When device turns off, cathode can and anode slot each provide the low impedance path for extracting hole and electronics, and the fast extraction for being stored in nonequilibrium carrier in drift region reduces turn-off time and shutdown energy loss.
Description
Technical field
The invention belongs to power semiconductor technologies field, it is related to a kind of novel rapidly switching off SOI LIGBT (Lateral
Insulated Gate Bipolar Transistor, landscape insulation bar double-pole-type transistor).
Background technology
IGBT is that MOSFET (mos field effect transistor) and BJT (bipolar junction transistor) are combined
New device, it not only has advantage of both the high input impedance of MOSFET and the low on-resistance of BJT, and at the same time real
High breakdown voltage and positive high current are showed.Wherein transversal I GBT (LIGBT) is easily integrated into silicon substrate, especially SOI bases
In power integrated circuit, SOI bases LIGBT is completely eliminated body silicon LIGBT substrate holes electronics to injection, and is isolated using medium
SOI technology easily realize being electrically isolated completely to for device, promote SOI LIGBT be widely used in power electronics, industrial automation,
The new high-tech industries such as aerospace.
Because of the complexity of device architecture, parameter slightly changes IGBT, and changing accordingly can all occur in performance.With
The operating current of the fast development of IGBT, IGBT is more and more big.But since device itself includes that a positive feedback current is returned
Road, when operating current increases to a certain extent, the sum of small signal shorts current amplification factor of parasitic bipolar transistor reaches 1,
It is easy to cause latch-up, seriously limits the range of safety operation area；Moreover, when latch-up occurs for device, grid electricity
Ability out of hand is caused device to be damaged because of overcurrent and heat by pole, causes device eventual failure.Therefore, it is necessary to lifters
The latch-up immunity of part.Meanwhile device can store a large amount of nonequilibrium carrier, non-equilibrium electricity in conducting in drift region
Son is mainly distributed in unspent drift region and field cutoff layer, because of traditional SOI LIGBT because substrate connects low potential, so
In break-over of device, hole can be accumulated in the top of oxygen buried layer, can be made in the nonequilibrium carrier that device shutdown stays in drift region
Larger at device tail currents, turn-off power loss is serious.
Invention content
In order to accelerate shutdown when drift region in nonequilibrium carrier extraction, reduce turn-off power loss；Suppression device is in big electricity
The parasitic NPN pipe unlatching flowed down makes latch-up, promotes the anti-short circuit capability of device.The present invention proposes a kind of novel
Rapidly switch off SOI LIGBT.By introducing hole accumulation slot, anode clamp fault trough respectively in cathode and anode, latch can inhibited
Effect reduces the turn-off time of device, obtains low turn-off power loss while promoting short-circuit capacity.
The technical solution adopted by the present invention is：
A kind of SOI LIGBT with rapid turn off characteristic, including be cascading from bottom to top substrate P 1, bury oxygen
Layer 2 and top semiconductor layer；The top semiconductor layer has N-type drift region 19, and device is along 19 transverse direction side of N-type drift region
To being followed successively by cathode construction, gate structure and anode construction from side to the other side；
The cathode construction includes the p-well region 9 and cathode can 10 for being located at 19 side upper layer of the drift regions N side by side, wherein p-well region
9 are located at close to the side of anode construction；9 upper layer of the p-well region has the P+ body contact zones 5 being set up in parallel and the cathodic regions N+ 6,
Middle P+ body contact zones 5 are contacted with cathode can 10；The cathode can 10 is by dielectric 4 and the conduction material wrapped up by dielectric 4
3 composition of material, the junction depth of the cathode can 10 are more than the junction depth of p-well region 9；The conductive material 3, P+ body contact zones 5 and N+ cathodes
6 common exit of area is cathode；
The gate structure by dielectric 8 and its on conductive material 7 collectively form, the exit of conductive material 7
For gate electrode；The dielectric 8 is contacted with top semiconductor layer, and gate structure is located at the upper surface in the part cathodic regions N+ 6, P
9 upper surface of well region and part and 19 upper surface of N-type drift region；
The anode construction includes being located at field cutoff layer 11 He of 19 upper layer of N-type drift region far from cathode construction side side by side
First N-doped zone 18, midfield cutoff layer 11 are located at close to the side of cathode construction；11 upper layer of field cutoff layer has P+
Anode region 12；First N-doped zone, the 18 upper surface tool is there are two anode slot structure 15 and between anode slot structure
Second N-doped zone 17；Second N-doped zone, 17 upper surface has the anode regions N+ 16；The anode slot structure 15 is by position
It is formed in the dielectric 13 of slot inner wall and the conductive material 14 for the p-type doping surrounded by dielectric 13；The anode regions P+
12, P-type conduction material 14 and the common exit of the anode regions N+ 16 are anode.
Further, 10 lower end of the cathode can is extended to is in contact with oxygen buried layer 2.
Further, it is p-well region 9, the P between two cathode cans there are two the cathode cans 10, between two cathode cans
9 upper layer of well region has P+ body contact zones 5, and 10 lower end of cathode can far from anode construction side is in contact with oxygen buried layer 2.
In said program, the doping concentration of the first N-doped zone 18 is more than the doping concentration of the second N-doped zone 17.
Beneficial effects of the present invention are, relative to traditional SOI LIGBT structures, the present invention has better resistance to shorting energy
Power, while there is faster switching speed and lower switching loss.
Description of the drawings
Fig. 1 is the structural schematic diagram of embodiment 1；
Fig. 2 is the structural schematic diagram of embodiment 2；
Fig. 3 is the structural schematic diagram of embodiment 3.
Specific implementation mode
Technical scheme of the present invention is described in further detail with reference to the accompanying drawings and examples.
Embodiment 1
As shown in Figure 1, the structure of this example includes the substrate P 1 being cascading from bottom to top, oxygen buried layer 2 and top half
Conductor layer；The top semiconductor layer has N-type drift region 19, and device is along 19 horizontal direction of N-type drift region, from side to another
Side is followed successively by cathode construction, gate structure and anode construction；
The cathode construction includes the p-well region 9 and cathode can 10 for being located at 19 side upper layer of the drift regions N side by side, wherein p-well region
9 are located at close to the side of anode construction；9 upper layer of the p-well region has the P+ body contact zones 5 being set up in parallel and the cathodic regions N+ 6,
Middle P+ body contact zones 5 are contacted with cathode can 10；The cathode can 10 is by dielectric 4 and the conduction material wrapped up by dielectric 4
3 composition of material, the junction depth of the cathode can 10 are more than the junction depth of p-well region 9；The conductive material 3, P+ body contact zones 5 and N+ cathodes
6 common exit of area is cathode
The gate structure by dielectric 8 and its on conductive material 7 collectively form, the exit of conductive material 7
For gate electrode；The dielectric 8 is contacted with top semiconductor layer, and gate structure is located at the upper surface in the part cathodic regions N+ 6, P
9 upper surface of well region and part and 19 upper surface of N-type drift region；
The anode construction includes being located at field cutoff layer 11 He of 19 upper layer of N-type drift region far from cathode construction side side by side
First N-doped zone 18, midfield cutoff layer 11 are located at close to the side of cathode construction；11 upper layer of field cutoff layer has P+
Anode region 12；First N-doped zone, the 18 upper surface tool is there are two anode slot structure 15 and between anode slot structure
Second N-doped zone 17；Second N-doped zone, 17 upper surface has the anode regions N+ 16；The anode slot structure 15 is by position
It is formed in the dielectric 13 of slot inner wall and the conductive material 14 for the p-type doping surrounded by dielectric 13；The anode regions P+
12, P-type conduction material 14 and the common exit of the anode regions N+ 16 are anode.
The operation principle of this example is：
Compared with traditional SOI LIGBT, cathode introduces the cathode can of connection cathode potential, and cathode can extends to cathode P
Well region hereinafter, and cathode can contacted with P+ body contact zones close to anode construction side, while it is highly concentrated in anode tap introducing two
The anode slot structure of the conductive material of p-type doping is spent, conductive material connects anode potential；When device forward conduction, cathode hole product
Tired slot provides a hole bypass for device, accumulates hole on cathode cell wall, makes device anti-door bolt under big current density
Lock ability is stronger, improves the anti-short circuit capability of device.When device turns off, cathode can and anode slot each provide extraction sky
The low impedance path in cave and electronics accelerates the extraction for being stored in nonequilibrium carrier in drift region, reduces turn-off time and shutdown
Energy loss.
Embodiment 2
As shown in Fig. 2, 10 lower end of cathode can that is distinguished as of this example and embodiment 1 extends to and is in contact with oxygen buried layer 2；With reality
It applies example 1 to compare, the design in this example is in addition to that can will flow to the hole accumulation of cathode in cell wall, also to be accumulated in above oxygen buried layer
Hole provide a channel for flowing directly into cathode, when device forward conduction, the anti-short circuit capability of devices is stronger.
When device turns off, the extraction for being stored in nonequilibrium carrier in drift region is further accelerated, turn-off time and pass are reduced
Disconnected energy loss.
Embodiment 3
As shown in figure 3, this example and embodiment 1 are distinguished as there are two cathode cans 10, it is p-well region 9 between two cathode cans,
9 upper layer of p-well region between two cathode cans has a P+ body contact zones 5, and 10 lower end of cathode can far from anode construction side with
Oxygen buried layer 2 is in contact；Compared with embodiment 1,2, the design in this example not only can provide multiple products to flow to the hole of cathode
Tired cell wall, can also provide a channel for flowing directly into cathode, the positive guide of device to be accumulated in the hole above oxygen buried layer
When logical, the latch-up immunity of device is stronger, and the anti-short circuit capability of device further gets a promotion.When device turns off, into one
The extraction for being stored in nonequilibrium carrier in drift region is accelerated to step, reduces turn-off time and shutdown energy loss.
Claims (3)
1. a kind of SOILIGBT with rapid turn off characteristic, including be cascading from bottom to top substrate P (1), bury oxygen
Layer (2) and top semiconductor layer；The top semiconductor layer has N-type drift region (19), and device is along N-type drift region (19) cross
To direction, cathode construction, gate structure and anode construction are followed successively by from side to the other side；
The cathode construction includes the p-well region (9) and cathode can (10) for being located at the drift regions N (19) side upper layer side by side, wherein p-well
Area (9) is located at close to the side of anode construction；P-well region (9) upper layer has the P+ body contact zones (5) being set up in parallel and N+ cloudy
Polar region (6), wherein P+ body contact zones (5) are contacted with cathode can (10)；The cathode can (10) is by dielectric (4) and by insulating
Conductive material (3) composition of medium (4) package, the junction depth of the cathode can (10) are more than the junction depth of p-well region (9)；The conduction
Material (3), P+ body contact zones (5) and the cathodic regions N+ (6) common exit are cathode；
The gate structure by dielectric (8) and its on conductive material (7) collectively form, the extraction of conductive material (7)
End is gate electrode；The dielectric (8) contacts with top semiconductor layer, and gate structure is located at the upper of the part cathodic regions N+ (6)
Surface, p-well region (9) upper surface and part and N-type drift region (19) upper surface；
The anode construction include side by side positioned at field cutoff layer (11) of N-type drift region (19) upper layer far from cathode construction side and
First N-doped zone (18), midfield cutoff layer (11) are located at close to the side of cathode construction；Field cutoff layer (11) upper layer
With the anode regions P+ (12)；First N-doped zone (18) the upper surface tool is there are two anode slot structure (15) and is located at anode
The second N-doped zone (17) between slot structure；Second N-doped zone (17) upper surface has the anode regions N+ (16)；Institute
State conduction of the anode slot structure (15) by dielectric (13) and the p-type doping surrounded by dielectric (13) positioned at slot inner wall
Material (14) forms；The common exit of the anode regions P+ (12), P-type conduction material (14) and the anode regions N+ (16) is sun
Pole.
2. a kind of SOILIGBT with rapid turn off characteristic according to claim 1, which is characterized in that the cathode can
(10) lower end is extended to is in contact with oxygen buried layer (2).
3. a kind of SOILIGBT with rapid turn off characteristic according to claim 1, which is characterized in that the cathode can
(10) it is p-well region (9) there are two, between two cathode cans, p-well region (9) upper layer between two cathode cans is contacted with P+ bodies
Area (5), and cathode can (10) lower end far from anode construction side is in contact with oxygen buried layer (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810113221.8A CN108321194B (en) | 2018-02-05 | 2018-02-05 | SOI LIGBT with quick turn-off characteristic |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810113221.8A CN108321194B (en) | 2018-02-05 | 2018-02-05 | SOI LIGBT with quick turn-off characteristic |
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| Publication Number | Publication Date |
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| CN108321194A true CN108321194A (en) | 2018-07-24 |
| CN108321194B CN108321194B (en) | 2020-05-26 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110504307A (en) * | 2019-08-28 | 2019-11-26 | 重庆邮电大学 | A kind of SA-LIGBT device with grid-control collector |
| CN113270474A (en) * | 2021-04-08 | 2021-08-17 | 西安电子科技大学 | Short-circuit anode lateral insulated gate bipolar transistor controlled by anode depletion region and manufacturing method thereof |
| CN113555424A (en) * | 2021-07-21 | 2021-10-26 | 电子科技大学 | Self-adaptive low-loss power device |
| CN114823863A (en) * | 2022-04-24 | 2022-07-29 | 电子科技大学 | Low-power-consumption transverse power device with anode groove |
| CN117650168A (en) * | 2024-01-30 | 2024-03-05 | 深圳天狼芯半导体有限公司 | Structure, manufacturing method, chip and electronic equipment of planar IGBT |
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| US20100176448A1 (en) * | 2008-06-23 | 2010-07-15 | Force Mos Technology Co. Ltd. | Intergrated trench mosfet with trench schottky rectifier |
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| CN106992208A (en) * | 2016-01-21 | 2017-07-28 | 重庆中科渝芯电子有限公司 | A kind of thin silicone layer SOI bases landscape insulation bar double-pole-type transistor and its manufacture method |
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| US20100176448A1 (en) * | 2008-06-23 | 2010-07-15 | Force Mos Technology Co. Ltd. | Intergrated trench mosfet with trench schottky rectifier |
| CN106992208A (en) * | 2016-01-21 | 2017-07-28 | 重庆中科渝芯电子有限公司 | A kind of thin silicone layer SOI bases landscape insulation bar double-pole-type transistor and its manufacture method |
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| JING ZHU等: ""Electrical Characteristic Study of an SOI-LIGBT With Segmented Trenches in the Anode Region"", 《IEEE TRANSACTIONS ON ELECTRON DEVICES》 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110504307A (en) * | 2019-08-28 | 2019-11-26 | 重庆邮电大学 | A kind of SA-LIGBT device with grid-control collector |
| CN110504307B (en) * | 2019-08-28 | 2023-03-14 | 重庆邮电大学 | SA-LIGBT device with grid-controlled collector |
| CN113270474A (en) * | 2021-04-08 | 2021-08-17 | 西安电子科技大学 | Short-circuit anode lateral insulated gate bipolar transistor controlled by anode depletion region and manufacturing method thereof |
| CN113555424A (en) * | 2021-07-21 | 2021-10-26 | 电子科技大学 | Self-adaptive low-loss power device |
| CN113555424B (en) * | 2021-07-21 | 2023-05-26 | 电子科技大学 | Self-adaptive low-loss power device |
| CN114823863A (en) * | 2022-04-24 | 2022-07-29 | 电子科技大学 | Low-power-consumption transverse power device with anode groove |
| CN114823863B (en) * | 2022-04-24 | 2023-04-25 | 电子科技大学 | Low-power-consumption transverse power device with anode groove |
| CN117650168A (en) * | 2024-01-30 | 2024-03-05 | 深圳天狼芯半导体有限公司 | Structure, manufacturing method, chip and electronic equipment of planar IGBT |
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| Publication number | Publication date |
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| CN108321194B (en) | 2020-05-26 |
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