CN110494960B - 洗净水供给装置 - Google Patents
洗净水供给装置 Download PDFInfo
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 107
- 238000004140 cleaning Methods 0.000 title claims abstract description 23
- 238000005406 washing Methods 0.000 claims abstract description 82
- 229910021642 ultra pure water Inorganic materials 0.000 claims abstract description 44
- 239000012498 ultrapure water Substances 0.000 claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 230000033116 oxidation-reduction process Effects 0.000 claims description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 239000003054 catalyst Substances 0.000 claims description 5
- 238000005342 ion exchange Methods 0.000 claims description 5
- 238000011084 recovery Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 24
- 239000000126 substance Substances 0.000 description 22
- 239000000243 solution Substances 0.000 description 11
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- 238000007872 degassing Methods 0.000 description 7
- 239000003814 drug Substances 0.000 description 7
- 239000003002 pH adjusting agent Substances 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- 239000007800 oxidant agent Substances 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 229940079593 drug Drugs 0.000 description 2
- 239000003456 ion exchange resin Substances 0.000 description 2
- 229920003303 ion-exchange polymer Polymers 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000001603 reducing effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000008237 rinsing water Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 1
- ATRRKUHOCOJYRX-UHFFFAOYSA-N Ammonium bicarbonate Chemical compound [NH4+].OC([O-])=O ATRRKUHOCOJYRX-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000001099 ammonium carbonate Substances 0.000 description 1
- 235000012501 ammonium carbonate Nutrition 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005949 ozonolysis reaction Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- C02F1/46—Treatment of water, waste water, or sewage by electrochemical methods
- C02F1/469—Treatment of water, waste water, or sewage by electrochemical methods by electrochemical separation, e.g. by electro-osmosis, electrodialysis, electrophoresis
- C02F1/4693—Treatment of water, waste water, or sewage by electrochemical methods by electrochemical separation, e.g. by electro-osmosis, electrodialysis, electrophoresis electrodialysis
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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Abstract
洗净水供给装置,其包括:超纯水线路(1),其以定量流通超纯水;制造部(2),其在该超纯水线路定量添加溶质,来制造洗净水;洗净水线路(3),其用于流通洗净水;洗净机(5A~5N),其由该洗净水线路(3)供给洗净水;溶质去除部(4),其由洗净水线路(3)导入剩余的洗净水;及回收线路(6),其用于将溶质已被去除的回收水送回至槽等。
Description
技术领域
本发明涉及在超纯水中添加pH调整剂、氧化还原电位调整剂等,制造且供给半导体晶片等的洗净水的装置,尤其涉及适于制造且供给以极低浓度含有pH调整剂、氧化还原电位调整剂等溶质的晶片洗净水的装置。
背景技术
在半导体晶片的洗净/清洗水工序中,在抑制晶片的带电、金属腐蚀/熔解、微粒子附着的目的下,有使用使酸或碱的pH调整剂、或如氧化剂或还原剂般的氧化还原电位调整剂,以所需最低限度的极低浓度溶解于超纯水的水质调整水作为洗净水(包含清洗水)的情形(例如,专利文献1)。以该洗净水的制造方法而言,也有使H2、O3、CO2、NH3等还原性、氧化性、酸性、或碱性的气体溶解于超纯水的方法,但是由于操作简便,大多采用将使pH调整剂及/或氧化还原电位调整剂溶解于水的药液进行注入的方法。以药液的注入方法而言,有使用泵的方法、使用通过密闭容器与N2等非活性气体进行的加压的方法,任一方法均已经被实用化。
若超纯水的流量为一定,虽然容易以成为所希望浓度的方式添加溶质,但是在实际上使用稀薄洗净水的洗净机中,以复数个阀的开闭控制被注入至晶片的水的供给/停止,流量会不规则变动。
即使超纯水流动发生变动,也以稀薄洗净水的溶质浓度在所希望范围内的方式,进行相对于超纯水流量的比例控制、接受浓度监视器的信号的PID控制等通过各种手法进行的溶质添加控制。但是,尤其在具有复数个洗净腔室的单片式洗净机中,并无法实现可充分追随不规则的流量变动的溶质添加控制,结果有被注入至晶片的洗净水/清洗水的液质大幅背离目的值的情形。
也有使液质稳定化优先且以一定条件制造且持续供给稀薄洗净水的单纯方法,但是此时会使剩余水直接流出。在最近的多腔室单片洗净机中,瞬间成为必要的最大流量与最低流量的差大,若连续供给最大流量以上的洗净水,会排出相当量的剩余水,在对用排水设备的负担、药液的过度使用/排出方面造成问题。
专利文献1:日本特开2016-139766号公报。
发明内容
本发明的目的在于提供可稳定供给适于供给至半导体用晶片等的洗净/清洗工序的含有碱/氧化剂等极低浓度的溶质的洗净水的洗净水供给装置。
本发明的洗净水供给装置,其具有:超纯水线路;及在来自该超纯水线路的超纯水中添加pH调整剂及/或氧化还原电位调整剂来制造一定浓度的洗净水的洗净水制造部,其特征在于,其包括:由洗净水制造部供给至洗净机的洗净水线路;及将溶质从来自该洗净水线路的剩余洗净水中去除的去除部。
在本发明的一方案中,前述洗净水制造部具有:向前述超纯水线路定量供给超纯水的机构、及向超纯水定量供给溶质的机构。
在本发明的一方案中,在前述洗净水线路连接有复数个洗净机,前述洗净水制造部能够制造比全部洗净机的最大使用量的合计量多的洗净水。
在本发明的一方案中,前述去除部包括:离子交换树脂、电再生式离子交换装置、或铂纳米胶体负载树脂。
[发明的效果]
在本发明中,在洗净水制造部,相对于以一定流量流通的超纯水定量添加溶质,由此以高精度制造成为一定浓度的洗净水。该一定浓度的洗净水被供给至晶片洗净机,剩余的洗净水在溶质去除部被去除,超纯水被回收。剩余的洗净水中的溶质及浓度为已知,而且溶质成分的种类也少,因此,能够轻易且充分地将溶质从剩余洗净水中去除。
通过本发明,在多数阀不规则开闭的多腔室单片式洗净机中,能够实现将在洗净/清洗工序中极为重要的液质精度良好而稳定地保持为所希望的值的供给,而且能够消除剩余水的排出而防止超纯水的浪费使用。
附图说明
图1是显示本发明的洗净水供给装置的实施方式的一个实例的***图。
图2是洗净水制造部的构成图。
图3是洗净水制造部的构成图。
图4是洗净水制造部的构成图。
图5是洗净水制造部的构成图。
图6是洗净水制造部的构成图。
图7是显示本发明的洗净水供给装置的实施方式的一个实例的***图。
具体实施方式
以下,参照附图,对本发明进行详细说明。
图1是显示本发明的洗净水供给装置的实施方式的一个实例的***图。
该洗净水供给装置用于在超纯水添加pH调整剂及/或氧化还原电位调整剂等来制造水质调整水,并且供给至洗净机,其具有:以定量流通超纯水的超纯水线路1;在该超纯水线路中定量添加溶质来制造洗净水的制造部2;用于流通洗净水的洗净水线路3;由该洗净水线路3供给洗净水的第1至第n的n个洗净机5A、5B、……5N;由洗净水线路3导入剩余的洗净水的溶质去除部4;及用于将溶质已被去除的回收水送回至槽等的回收线路6等。
对洗净机5A、5B至5N,分别由洗净水线路3经由分支配管7、阀8、泵9、配管10供给洗净水。也可在配管10设置过滤器。回流配管11由配管10分支而成,该回流配管11的末端侧连接于洗净水线路3。在回流配管11设有阀12。
在超纯水线路1通过具备有定量泵、定流量阀、流量控制装置等的定量供给装置,以一定流量流通超纯水。在制造部2以一定供给量在超纯水中添加溶质,由此,以高精度,将成为目的浓度的洗净水经由洗净水线路3朝向各洗净机5A~5N供给。
在图2~6中显示洗净水制造部2的构成的一个实例。
在图2中,洗净水制造部由药液槽15、注药泵16、及注药配管17所构成。在药液槽15内收容有pH调整剂、氧化还原电位调整剂等1种以上以预定浓度溶解的药液。以注药泵16而言,使用定量泵或附流量控制装置的泵。也可设置2个以上由药液槽15、注药泵16、及注药配管17所成的注药单元。
在图3中,洗净水制造部具备有:用于去除氧等气体成分的除气装置20、及膜式气体溶解装置21。除气装置20在本实施方式中是具有膜20a的膜式除气装置,构成为将以膜20a间隔的气相室内通过真空泵22等减压机构进行减压。但是,除气装置也可为膜除气装置以外的装置。
气体溶解装置21在本实施方式中为膜式溶解装置。在以气体透过膜21a间隔的气相室内,经由配管23定量供给用于溶解在超纯水中的气体。
由该配管23供给至气体溶解装置21的气体包含1种或2种以上的溶解目的成分气体。被供给至气体溶解装置21的气体也可为仅由1种或2种以上的目的成分气体构成,也可为目的成分气体与非活性气体的定量比的混合气体。
其中,也可使用膜式气体溶解装置以外的射出器等直接气液接触式气体溶解装置。
图4的洗净水制造部具备有:图2的药液槽15、注药泵16、注药配管17、及图3的除气装置20及气体溶解装置12的双方。
图5的洗净水制造部,在图2中,在超纯水线路1中设有过氧化氢去除装置25,其他构成与图2相同。通过设置过氧化氢去除装置25,可精度良好地控制洗净水中的氧化剂的量。
在图2、4、5中,将药液槽15内的药液,通过注药泵16而注药至超纯水线路1,但是也可如图6所示构成为对药液槽15定量供给氮气等非活性气体而将药液定量添加在超纯水线路1。图6与图2相关连,但是图4、5也可同样地构成。
由制造部2供给至洗净水线路3的洗净水量比被供给至各洗净机5A~5N的洗净水量的最大量的合计量多,优选为该合计量的120%以上。
在本发明中,注药至超纯水的药液是使pH调整剂及/或氧化还原电位调整剂溶解在超纯水中来进行调制的药液,以该pH调整剂而言,可使用:盐酸、醋酸、硝酸、磷酸、硫酸、氢氟酸、氨、氢氧化钠、氢氧化钾、四甲基氢氧化铵、或碳酸铵等。
此外,以氧化还原电位调整剂而言,可使用过氧化氢或硝酸。
本发明中所使用的药液通常以20~48重量%左右的浓度含有这些药剂,将如上所示的药液注药至超纯水,通常制造药剂浓度0.1~100mg/L左右的洗净水。
以溶解于超纯水的气体而言,例示H2、O3、CO2、NH3等。这些浓度也通常形成为ppm级例如50ppm以下,尤其20ppm以下的稀薄浓度。
如上所述,在本发明中,制造部2中的酸、碱、氧化剂、还原剂等的溶解,能够直接适用以往的注药机构或气体溶解机构。也即,若为注药,以通过泵或N2等非活性气体进行的压送,若为气体溶解,以通过气体透过膜模组或射出器等进行的气液接触操作,以成为所希望的溶质浓度的方式使其溶解。
去除部4中的剩余水的处理可以仅以离子交换树脂或铂族催化剂对应。也即,ppm级的酸/碱能够以离子交换装置轻易去除。也可适用电再生式离子交换装置(所谓EDI)。在氧化剂/还原剂的去除中,铂纳米胶体负载树脂等催化剂是有效的。若有含较多臭氧的剩余水的情况下,优选追加适于臭氧分解的催化剂。
来自洗净水线路3的剩余洗净水中的溶质浓度非常低,为ppm级,此外,溶质种类也受限,因此轻易将溶质充分去除,以简单的离子交换装置与催化剂装置的组合,恢复到接近超纯水的纯度。因此,在去除部4去除溶质后的回收水可导至剩余超纯水的回流配管或超纯水槽,可不浪费地再利用。
上述实施方式是本发明的一例,本发明也可形成为上述以外的方式。在上述实施方式中设置有复数个(N个)洗净机5A~5N,但是也可如图7所示,仅设置1台洗净机。
以上使用特定方案对本发明进行了详细说明,但是,本领域技术人员显然知悉在不脱离本发明的意图与范围的情形下可作各种变更。
本申请是根据2017年4月14日提出的日本专利申请特愿2017-080626提出的,通过引用而援引其全体。
附图符号的说明
1:超纯水线路;2:洗净水制造部;3:洗净水线路;4:去除部;5、5A~5N:洗净机;15:药液槽;16:注药泵;20:除气装置;21:气体溶解装置。
Claims (1)
1.一种洗净水供给装置,其具有超纯水线路、和在来自该超纯水线路的超纯水中添加pH调整剂及氧化还原电位调整剂来制造一定浓度的洗净水的洗净水制造部,其特征在于,
所述洗净水供给装置包括:将该洗净水从该洗净水制造部向洗净机供给的洗净水线路;及将溶质从来自该洗净水线路的剩余洗净水中去除的去除部,
该洗净机是多数阀不规则开闭的多腔室单片式洗净机,
向该洗净机供给的该洗净水量是变动的,
该去除部包括离子交换装置和铂族催化剂装置,
前述洗净水制造部具有:向前述超纯水线路定量供给超纯水的机构、及向超纯水定量供给溶质的机构,
在前述洗净水线路连接有复数个洗净机,
前述洗净水制造部能够制造比全部洗净机的最大使用量的合计量多的洗净水,
由该洗净水制造部供给至该洗净水线路的洗净水量为被供给至各洗净机的洗净水量的最大量的合计量的120%以上,
对各洗净机,分别由该洗净水线路经由分支配管、配管供给洗净水,回流配管由该配管分支而成,该回流配管的末端侧连接于该洗净水线路。
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PCT/JP2018/011100 WO2018190089A1 (ja) | 2017-04-14 | 2018-03-20 | 洗浄水供給装置 |
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