CN110491834B - Method for processing object to be processed - Google Patents
Method for processing object to be processed Download PDFInfo
- Publication number
- CN110491834B CN110491834B CN201910383378.7A CN201910383378A CN110491834B CN 110491834 B CN110491834 B CN 110491834B CN 201910383378 A CN201910383378 A CN 201910383378A CN 110491834 B CN110491834 B CN 110491834B
- Authority
- CN
- China
- Prior art keywords
- processing
- workpiece
- laser beam
- line
- processed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
Abstract
Provided is a method for processing a workpiece, wherein occurrence of processing defects is suppressed when a plate-shaped workpiece is processed by irradiation of a laser beam. The method for processing a plate-shaped object to be processed including N (N is a natural number of 3 or more) dividing lines set at equal intervals, the method comprising the steps of: a 1 st processing step of applying a distance 2 to a line to be divided located at the outermost side of the object to be processed n X D (D is the distance between two adjacent 1 st division lines, n is 2 n A 1 st division line present at the 1 st position indicated by < N, and irradiating a laser beam to form a processing mark on the object to be processed; and (k+1) a processing step of using 2 for a distance from the kth position (k is a natural number of n or less) n‑k The laser beam is irradiated to the predetermined dividing line selected from the 1 st predetermined dividing lines present at the (k+1) th position indicated by x D x m (m is a natural number), thereby forming a processing trace on the workpiece.
Description
Technical Field
The present invention relates to a method for processing a workpiece, in which a plate-shaped workpiece is processed along a predetermined dividing line.
Background
The front surface of a wafer as a base material is divided into a plurality of regions by dividing lines called streets, devices such as integrated circuits are formed in the respective regions, and then the wafer is divided along the dividing lines, thereby obtaining device chips to be incorporated in various electronic devices. For dividing the wafer, for example, a cutting device is used which rotates an annular cutting blade to cut into an object.
In the cutting process of a wafer using the cutting device, the wafer is mechanically cut by a rotating cutting tool. Therefore, for example, when there is a deviation in the load applied to the wafer from one side surface (front surface) and the other side surface (back surface) of the cutting tool, defects, cracks, and other processing defects tend to occur in the wafer. In addition, when the load variation increases, the cutting tool may be damaged.
Thus, the following method is proposed: in order to cut the cutting tool into the wafer, it is desired to reduce the variation in load acting between the cutting tool and the wafer (for example, refer to patent document 1). In this method, the cutting tool is cut into the wafer to be cut lines in the order in which the areas of the two chips generated by the cutting are substantially equal, so that the load variation between the cutting tool and the wafer is reduced.
A method of dividing a wafer by using a laser processing apparatus capable of irradiating a laser beam having a wavelength which is absorptive to the wafer instead of the cutting apparatus is also known (for example, refer to patent document 2). In the method using the laser processing apparatus, a processing mark (groove) is formed by irradiating a pulsed laser beam along a line to divide the wafer.
Patent document 1: japanese patent laid-open No. 4-245663
Patent document 2: japanese patent laid-open No. 10-305420
However, when a wafer is processed by the above-described method using a laser processing apparatus, processing defects such as chipping and cracking may occur in the wafer.
Disclosure of Invention
The present invention has been made in view of the above-described problems, and an object thereof is to provide a method of processing a workpiece, which can suppress occurrence of processing failure when a plate-like workpiece is processed by irradiation with a laser beam.
According to one aspect of the present invention, there is provided a method for processing a workpiece by irradiating a plate-shaped workpiece, which is divided into a plurality of regions by N predetermined dividing lines set at equal intervals, with a laser beam along the predetermined dividing lines, wherein N is a natural number of 3 or more, the method comprising the steps of: a 1 st processing step of setting a distance 2 from the dividing line located at the outermost side of the object to be processed n The laser beam is irradiated to the predetermined dividing line at the 1 st position indicated by x D, wherein D is the distance between two adjacent predetermined dividing lines, and n is the distance satisfying 2 n A maximum natural number of < N; and (k+1) a processing step of, after the 1 st processing step, applying 2 to the distance from the kth position n-k The laser beam is irradiated to the predetermined dividing line selected from the predetermined dividing lines at the (k+1) th position indicated by x D x m, where k is a natural number equal to or smaller than n, m is a natural number, the (k+1) th processing step is sequentially performed according to k from 1 to n, and the predetermined dividing line to which the laser beam is not irradiated in all the (k+1) th processing steps is selected, wherein i is a natural number equal to or smaller than k.
In one embodiment of the present invention, the workpiece may be a GaAs wafer.
In the processing method of the object to be processed according to one embodiment of the present invention, the processing mark is formed on the object to be processed and divided into the regions of a certain degree, and then the laser beam is irradiated to the 1 st division line located in the middle of the two processing marks that have been formed to form the new processing mark, so that the region sandwiched by the two processing marks that have been formed is divided into two small regions having a volume of a certain degree by the processing mark that has been formed newly.
Therefore, even if heat conduction generated at the time of irradiation of the laser beam is hindered due to the existing processing mark, heat can be conducted in the same manner in the two small areas. That is, since a temperature difference due to heat during processing is not easily generated in one of the two small areas and the other, occurrence of processing failure due to heat conduction due to the deviation can be suppressed. In this way, according to one aspect of the present invention, there is provided a processing method for a processed object, which can suppress occurrence of processing failure when a plate-like processed object is processed by irradiation of a laser beam.
Drawings
Fig. 1 is a perspective view showing a configuration example of a workpiece or the like.
Fig. 2 is a perspective view showing a case of machining an object to be machined.
Fig. 3 is a plan view showing a workpiece that has been processed along a line for dividing existing at the 1 st position.
Fig. 4 is a plan view showing a workpiece that has been processed along a line for dividing existing at the 2 nd position.
Fig. 5 is a plan view showing a workpiece that has been processed along the dividing line existing at the 3 rd position.
Fig. 6 is a plan view showing a workpiece that has been processed along the dividing line existing at the 4 th position.
Description of the reference numerals
11: a workpiece; 11a: a front face; 11b: a back surface; 11c: 1 st processing mark (groove); 11d: 2 nd processing mark (groove); 11e: 3 rd processing mark (groove); 11f: 4 th machining mark (groove); 13a: 1 st division of a predetermined line; 13b: dividing the preset line; 15: a device; 17: a belt; 19: a frame; 21: a laser beam; l1: position 1; l2: position 2; l3: a 3 rd position; l4: a 4 th position; 2: a laser processing device; 4: a chuck table; 6: a laser processing unit; 8: a camera (shooting unit).
Detailed Description
When a laser beam is irradiated to form a processing mark such as a groove on a plate-shaped object to be processed, for example, when the object to be processed is processed sequentially from an end portion, processing defects such as a defect and a crack are likely to occur in the object to be processed. This phenomenon is presumed to be due to: when one of the two regions defined by the processing mark formed by the irradiation of the laser beam is sufficiently small, a large temperature difference is generated between the two regions due to heat generated during the irradiation of the laser beam.
That is, it is considered that this problem can be solved if heat generated at the time of irradiation of the laser beam is conducted in the same manner in two regions divided by the processing mark as a boundary. In the present invention, therefore, after a plurality of processing marks are formed on a workpiece and divided into regions of a certain size, a laser beam is irradiated to a dividing line located in the middle of two processing marks that have already been formed, thereby forming a new processing mark.
Thus, the region sandwiched by the two existing processing marks is divided into two small regions having the same volume by the newly formed processing mark, and therefore even if heat conduction generated when irradiation of the laser beam is hindered by the two existing processing marks, heat can be conducted in the same manner in the two small regions.
An embodiment of the present invention will be described below with reference to the drawings. Fig. 1 is a perspective view showing a configuration example of a plate-shaped workpiece 11 or the like processed by the processing method of the workpiece according to the present embodiment. As shown in fig. 1, the workpiece 11 is, for example, a disk-shaped GaAs wafer made of GaAs (gallium arsenide).
The front surface 11a side of the workpiece 11 is divided into a plurality of small areas by a plurality of 1 st lines 13a which are linear and parallel to the 1 st direction (direction a) and a plurality of 2 nd lines 13B which are linear and parallel to the 2 nd direction (direction B) intersecting the 1 st direction. That is, the 1 st division scheduled line 13a and the 2 nd division scheduled line 13b intersect each other.
Devices 15 such as ICs (Integrated Circuit: integrated circuits) are provided in the respective small regions. In fig. 1, the workpiece 11 is shown with the 1 st direction and the 2 nd direction substantially perpendicular to each other, but the 1 st direction and the 2 nd direction may intersect at least. That is, the 1 st direction and the 2 nd direction may be non-parallel.
The material, shape, structure, size, and the like of the workpiece 11 are not limited. For example, a substrate formed of another semiconductor, ceramic, resin, metal, or other material may be used as the workpiece 11. Similarly, the kind, number, shape, configuration, size, arrangement, and the like of the devices 15 are not limited. The device 15 may not be formed on the workpiece 11.
A dicing tape 17 having a larger diameter than the workpiece 11 is attached to the rear surface 11b side of the workpiece 11. The outer peripheral portion of the belt 17 is adhered to an annular frame 19 having a substantially circular opening 19 a. That is, the workpiece 11 is supported by the frame 19 via the belt 17.
In the present embodiment, the work 11 is processed from the front surface 11a side and the tape 17 is attached to the rear surface 11b side, but in the case where the work 11 is processed from the rear surface 11b side, the tape 17 may be attached to the front surface 11a side. In the case of using a jig table or the like for directly holding the workpiece 11, the tape 17 may not be attached to the workpiece 11.
Fig. 2 is a perspective view showing a case where the workpiece 11 is processed. In the method of processing the workpiece according to the present embodiment, the workpiece 11 is processed using, for example, the laser processing apparatus 2 shown in fig. 2. The laser processing apparatus 2 includes a chuck table 4 for holding a workpiece 11.
A holding plate (not shown) made of a porous material is exposed to a part of the upper surface of the chuck table 4. The upper surface of the holding plate is formed to be substantially parallel to the X-axis direction and the Y-axis direction, and is connected to a suction source (not shown) via a suction path (not shown) or the like provided in the chuck table 4.
A plurality of jigs (not shown) for fixing the annular frame 19 are provided around the chuck table 4. A moving mechanism (not shown) and a rotating mechanism (not shown) are connected to the lower portion of the chuck table 4. The chuck table 4 is moved in the X-axis direction (machining feed direction) and the Y-axis direction (indexing feed direction) by the moving mechanism, and is rotated about a rotation axis substantially parallel to the Z-axis direction (vertical direction) by the rotating mechanism.
A laser processing unit 6 is disposed above the chuck table 4. The laser processing unit 6 irradiates and condenses the laser beam 21 pulsed by a laser oscillator (not shown) at a predetermined position. The laser oscillator used in the present embodiment is configured to be capable of pulsing the laser beam 21 having a wavelength that is absorptive to the workpiece 11, and is suitable for ablation processing of the workpiece 11.
A camera (imaging unit) 8 for imaging the object 11 or the like is disposed laterally of the laser processing unit 6. Based on the image obtained by the camera 8, for example, an angle between the 1 st division line 13a (or the 2 nd division line 13 b) of the workpiece 11 and the X-axis direction is adjusted.
In the method of processing a workpiece according to the present embodiment, first, the workpiece 11 is held on the chuck table 4 of the laser processing apparatus 2 (holding step). Specifically, the belt 17 attached to the back surface 11b side of the workpiece 11 is brought into contact with the upper surface of the chuck table 4 (holding plate), and then negative pressure of the suction source is applied. The frame 19 is fixed by a jig. Thereby, the workpiece 11 is held in a state where the front surface 11a is exposed upward.
After holding the workpiece 11 on the chuck table 4, the laser beam 21 is irradiated to process the workpiece 11 (processing step). In the present embodiment, the step of processing the workpiece 11 along only the 1 st line of division 13a is described, but the workpiece 11 may be further processed along the 2 nd line of division 13b in the same manner. Of course, the workpiece 11 may be processed only along the 2 nd line of division 13 b.
Specifically, N is first set as the total number of 1 st division lines 13a set to the workpiece 11, D is set as the distance between two adjacent 1 st division lines 13a, and N is set as the sum of 2 n The distance from the 1 st division line 13a located on the outermost side of the workpiece 11 is 2 n The 1 st division line 13a present at the 1 st position indicated by x D is irradiated with the laser beam 21 to process the workpiece 11 (1 st processing step).
In addition, satisfy 2 n Since N is a natural number, < N, the total number of 1 st lines 13a to be processed must be 3 or more. The plurality of 1 st division lines 13a need to be set at substantially equal intervals. That is, N (N is a natural number of 3 or more) 1 st division lines 13a are set at substantially equal intervals on the workpiece 11.
On the other hand, the number, arrangement, and the like of the 2 nd division lines 13b are not limited. Of course, when the workpiece 11 is processed along the 2 nd line of division preset 13b in the same step as in the present embodiment, the condition of the 2 nd line of division preset 13b is set in accordance with the condition equivalent to the 1 st line of division preset 13a.
Fig. 3 is a plan view showing the workpiece 11 processed along the line 13a for dividing existing at the 1 st position L1. Hereinafter, the total number of lines 13a set in the 1 st division line of the workpiece 11 will be described as 11 (i.e., n=11).In this case, satisfy 2 n The largest natural number N of < N is 3. Thus, the distance from the 1 st line 13a (reference position L0) located on the outermost side of the workpiece 11 to the 1 st position L1 is 8×d as shown in fig. 3.
When the laser beam 21 is irradiated along the 1 st division scheduled line 13a existing at the 1 st position L1, the chuck table 4 is first moved to position the laser processing unit 6 above the extension line of the 1 st division scheduled line 13a existing at the 1 st position L1. When the X-axis direction of the laser processing apparatus 2 is not parallel to the 1 st line 13a to be divided of the workpiece 11, the chuck table 4 is rotated in advance to adjust the orientation of the 1 st line 13a.
Then, the chuck table 4 is moved in the X-axis direction while irradiating the laser beam 21 having a wavelength absorbing to the workpiece 11 from the laser processing unit 6. Thus, the 1 st processing mark (groove) 11c can be formed by irradiating the 1 st division line 13a existing at the 1 st position L1 with the laser beam 21. In addition, the depth of the 1 st processing trace 11c is not limited. For example, the 1 st processing mark 11c having a depth at which the workpiece 11 is cut (severed) may be formed.
After forming the 1 st processing mark 11c, the distance from the 1 st position L1 is 2 n-1 The 1 st division line 13a present at the 2 nd position L2 indicated by x D x m (m is a natural number) is irradiated with a laser beam to process the workpiece 11 (2 nd processing step).
Fig. 4 is a plan view showing the workpiece 11 processed along the line 13a for dividing existing at the 2 nd position L2. As described above, satisfy 2 n The largest natural number N of < N is 3. Thus, as shown in fig. 4, the distance from the 1 st position L1 to the 2 nd position L2 is 4×d×m. In fig. 4, only a representative 2 nd position L2 is shown.
When the laser beam 21 is irradiated along the 1 st division scheduled line 13a existing at the 2 nd position L2, the chuck table 4 is first moved to position the laser processing unit 6 above the extension line of the 1 st division scheduled line 13a as the object. Then, the chuck table 4 is moved in the X-axis direction while irradiating the laser beam 21 having a wavelength absorbing to the workpiece 11 from the laser processing unit 6.
Thus, the 2 nd processing mark (groove) 11d can be formed by irradiating the laser beam 21 to the 1 st predetermined line 13a to be divided. The depth of the 2 nd processing mark 11d is not limited. Then, the same procedure is repeated, and the laser beam 21 is irradiated to all the 1 st division lines 13a to be processed, thereby forming the 2 nd processing mark 11d.
Fig. 4 also shows the 2 nd position L2 outside the workpiece 11, and the laser beam 21 may not be irradiated to the 2 nd position L2. On the other hand, the laser beam 21 is irradiated to the 1 st division line 13a existing at the 2 nd position L2 overlapping the reference position L0, the distance from the 1 st position L1 being represented by 4×d×2.
After the 2 nd processing mark 11d is formed, the distance from the 2 nd position L2 is 2 n-2 Of the 1 st division scheduled lines 13a where no 1 st processing mark 11c or 2 nd processing mark 11D is formed, out of the 1 st division scheduled lines 13a existing at the 3 rd position L3 indicated by x D x m (m is a natural number), the 1 st division scheduled line 13a where no laser beam is irradiated in the 1 st processing step and the 2 nd processing step (i.e., the 1 st division scheduled line 13a where no laser beam is irradiated in the 1 st processing step) irradiates a laser beam to process the workpiece 11 (3 rd processing step).
Fig. 5 is a plan view showing the workpiece 11 processed along the line 13a for dividing existing at the 3 rd position L3. As described above, satisfy 2 n The largest natural number N of < N is 3. Thus, as shown in fig. 5, the distance from the 2 nd position L2 to the 3 rd position L3 is 2×d×m. In fig. 5, only a representative 3 rd position L3 is shown.
When the laser beam 21 is irradiated along the 1 st division target line 13a, on which no 1 st processing mark 11c or 2 nd processing mark 11d is formed, of the 1 st division target lines 13a existing at the 3 rd position L3, the chuck table 4 is first moved to position the laser processing unit 6 above the extension line of the target 1 st division target line 13a. Then, the chuck table 4 is moved in the X-axis direction while irradiating the laser beam 21 having a wavelength absorbing to the workpiece 11 from the laser processing unit 6.
Thus, the 3 rd processing mark (groove) 11e can be formed by irradiating the laser beam 21 to the 1 st predetermined line 13a to be divided. In addition, the depth of the 3 rd processing mark 11e is not limited. Then, the same procedure is repeated, and the laser beam 21 is irradiated to all the 1 st division lines 13a to be processed, thereby forming the 3 rd processing mark 11e.
After forming the 3 rd processing trace 11e, the distance from the 3 rd position L3 is 2 n-3 Of the 1 st division scheduled lines 13a at the 4 th position L4 indicated by x D x m (m is a natural number), the 1 st division scheduled line 13a on which any of the 1 st processing mark 11c, 2 nd processing mark 11D, and 3 rd processing mark 11e is not formed (that is, the 1 st division scheduled line 13a on which the laser beam is not irradiated in the 1 st processing step, 2 nd processing step, and 3 rd processing step) is irradiated with the laser beam to process the workpiece 11 (4 th processing step).
Fig. 6 is a plan view showing the workpiece 11 processed along the line 13a for dividing existing at the 4 th position L4. As described above, satisfy 2 n The largest natural number N of < N is 3. Thus, as shown in fig. 6, the distance from the 3 rd position L3 to the 4 th position L4 is 1×d×m. In fig. 6, only a representative 4 th position L4 is shown.
When the laser beam 21 is irradiated along the 1 st division target line 13a, on which no 1 st machining mark 11c, 2 nd machining mark 11d, or 3 rd machining mark 11e is formed, of the 1 st division target lines 13a existing at the 4 th position L4, the chuck table 4 is first moved to position the laser processing unit 6 above the extension line of the target 1 st division target line 13a. Then, the chuck table 4 is moved in the X-axis direction while irradiating the laser beam 21 having a wavelength absorbing to the workpiece 11 from the laser processing unit 6.
Thus, the 4 th processing mark (groove) 11f can be formed by irradiating the laser beam 21 to the 1 st predetermined line 13a to be divided. The depth of the 4 th processing trace 11f is not limited. Then, the same procedure is repeated, and the laser beam 21 is irradiated to all the 1 st division lines 13a to be subjected to the processing to form the 4 th processing mark 11f. Thus, the workpiece 11 is processed along all the 1 st division lines 13a.
As described above, in the processing method of the object to be processed according to the present embodiment, the processing mark (1 st processing mark 11c, 2 nd processing mark 11 d) is formed on the object to be processed 11 and divided into the regions of a certain degree, and then the laser beam 21 is irradiated to the 1 st division line 13a located in the middle of the two processing marks that have been formed to form the new processing mark (3 rd processing mark 11e, 4 th processing mark 11 f), so that the region sandwiched by the two processing marks that have been formed is divided into two small regions having the same degree of volume by the newly formed groove.
Therefore, even if heat conduction generated at the time of irradiation of the laser beam 21 is hindered by the existing processing mark, heat can be conducted in the same manner in the two small areas. That is, since a temperature difference due to heat during processing is not easily generated between one of the two small areas and the other, occurrence of processing failure due to heat transfer due to the deviation can be suppressed.
The present invention is not limited to the description of the above embodiments, and can be variously modified and implemented. For example, in the above embodiment, the case where the total number of lines to be divided 1 is 11 has been mainly described, but when the total number of lines to be divided 1 is arbitrary N (N is a natural number of 3 or more), the workpiece 11 can be processed in the following steps.
First, a distance 2 from the 1 st division line located on the outermost side of the workpiece n X D (D is the distance between two adjacent 1 st division lines, n is 2 n The 1 st division line present at the 1 st position indicated by < N, and irradiating a laser beam to form a processing mark (groove) on the workpiece (1 st processing step). The 1 st processing step is the same as that of the above embodiment.
After the 1 st processing step, the distance from the kth position (k is a natural number of n or less) is 2 n-k A 1 st division scheduled line selected from 1 st division scheduled lines existing at the (k+1) th position represented by x D x m (m is a natural number) is irradiated with a laser beamA processing mark is formed on the workpiece (the (k+1) th processing step).
The (k+1) th processing step is performed in order of k from 1 to n. In the (k+1) th processing step, a line to be divided, which is not irradiated with the laser beam in all the i-th processing steps, is selected, where i is a natural number of k or less. Specifically, for example, in the 5 th processing step, the dividing line 13a to which the laser beam is not irradiated in the 1 st processing step, the 2 nd processing step, the 3 rd processing step, and the 4 th processing step is selected.
In the above embodiment, the object 11 is ablated by irradiating the object 11 with the laser beam 21 having a wavelength absorbing to the object 11, but the wavelength of the laser beam used in the ablation is not particularly limited. For example, when a laser beam having a wavelength that is transparent to the workpiece 11 is used, the laser beam is sufficiently condensed to generate multiphoton absorption, so that the workpiece 11 can be ablated.
In the above embodiment, the step of machining the workpiece 11 along only the 1 st line of division 13a has been described, but the 1 st line of division 13a and the 2 nd line of division 13b may be alternately machined. In this case, for example, the workpiece 11 can be processed as follows: after the 1 st processing step for processing the 1 st division scheduled line 13a, the 1 st processing step for processing the 2 nd division scheduled line 13b is performed, and then the 2 nd processing step for processing the 1 st division scheduled line 13a is performed.
In addition, the structure, method, and the like of the above embodiment can be modified and implemented as appropriate without departing from the scope of the object of the present invention.
Claims (2)
1. A method of processing a workpiece by irradiating a plate-shaped workpiece, which is divided into a plurality of regions by N dividing lines set at equal intervals, with a laser beam along the dividing lines, wherein N is a natural number of 3 or more,
the processing method of the processed object comprises the following steps:
a 1 st processing step of setting a distance 2 from the dividing line located at the outermost side of the object to be processed n The laser beam is irradiated to the predetermined dividing line at the 1 st position indicated by x D, wherein D is the distance between two adjacent predetermined dividing lines, and n is the distance satisfying 2 n A maximum natural number of < N; and
a (k+1) th processing step, after the 1 st processing step, of using 2 for the distance from the kth position n-k The laser beam is irradiated to the predetermined dividing line selected from the predetermined dividing lines at the (k+1) th position indicated by x D x m to form a processing trace on the workpiece, where k is a natural number of n or less, m is a natural number,
the (k+1) th processing step is performed sequentially in accordance with k ranging from 1 to n,
in the (k+1) -th processing step, the division line to which the laser beam is not irradiated in all the i-th processing steps is selected, where i is a natural number of k or less.
2. The method for processing an object according to claim 1, wherein,
the workpiece is a GaAs wafer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018093478A JP7034551B2 (en) | 2018-05-15 | 2018-05-15 | Processing method of work piece |
| JP2018-093478 | 2018-05-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110491834A CN110491834A (en) | 2019-11-22 |
| CN110491834B true CN110491834B (en) | 2023-08-18 |
Family
ID=68546231
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910383378.7A Active CN110491834B (en) | 2018-05-15 | 2019-05-09 | Method for processing object to be processed |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7034551B2 (en) |
| CN (1) | CN110491834B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005193284A (en) * | 2004-01-09 | 2005-07-21 | Hamamatsu Photonics Kk | Laser machining method and laser machining apparatus |
| JP2014024699A (en) * | 2012-07-26 | 2014-02-06 | Mitsuboshi Diamond Industrial Co Ltd | Method for dividing glass substrate, method for dicing glass substrate, and laser processing device |
| JP2016054205A (en) * | 2014-09-03 | 2016-04-14 | 株式会社ディスコ | Wafer processing method |
| JP2016054207A (en) * | 2014-09-03 | 2016-04-14 | 株式会社ディスコ | Wafer processing method |
| JP2018067645A (en) * | 2016-10-20 | 2018-04-26 | 株式会社ディスコ | Wafer processing method |
| JP2018067647A (en) * | 2016-10-20 | 2018-04-26 | 株式会社ディスコ | Wafer processing method |
| JP2018074082A (en) * | 2016-11-02 | 2018-05-10 | 株式会社ディスコ | Processing method of wafer |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04245663A (en) * | 1991-01-31 | 1992-09-02 | Fujitsu Ltd | Semiconductor wafer dicing method and dicing blade cooling mechanism |
| US5750277A (en) | 1996-04-10 | 1998-05-12 | Texas Instruments Incorporated | Current interrupter for electrochemical cells |
| JP2010274630A (en) | 2009-06-01 | 2010-12-09 | Daitron Technology Co Ltd | Method and apparatus for dividing substrate |
| JP5515679B2 (en) | 2009-11-25 | 2014-06-11 | 株式会社村田製作所 | Substrate dicing method |
| JP2011151186A (en) | 2010-01-21 | 2011-08-04 | Toshiba Corp | Method of dividing semiconductor wafer |
| JP5657302B2 (en) * | 2010-08-04 | 2015-01-21 | 株式会社ディスコ | Cutting method |
| JP5823749B2 (en) * | 2011-07-11 | 2015-11-25 | 株式会社ディスコ | Method for dividing optical device substrate |
-
2018
- 2018-05-15 JP JP2018093478A patent/JP7034551B2/en active Active
-
2019
- 2019-05-09 CN CN201910383378.7A patent/CN110491834B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005193284A (en) * | 2004-01-09 | 2005-07-21 | Hamamatsu Photonics Kk | Laser machining method and laser machining apparatus |
| JP2014024699A (en) * | 2012-07-26 | 2014-02-06 | Mitsuboshi Diamond Industrial Co Ltd | Method for dividing glass substrate, method for dicing glass substrate, and laser processing device |
| JP2016054205A (en) * | 2014-09-03 | 2016-04-14 | 株式会社ディスコ | Wafer processing method |
| JP2016054207A (en) * | 2014-09-03 | 2016-04-14 | 株式会社ディスコ | Wafer processing method |
| JP2018067645A (en) * | 2016-10-20 | 2018-04-26 | 株式会社ディスコ | Wafer processing method |
| JP2018067647A (en) * | 2016-10-20 | 2018-04-26 | 株式会社ディスコ | Wafer processing method |
| JP2018074082A (en) * | 2016-11-02 | 2018-05-10 | 株式会社ディスコ | Processing method of wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20190130970A (en) | 2019-11-25 |
| TW201947647A (en) | 2019-12-16 |
| JP2019201061A (en) | 2019-11-21 |
| JP7034551B2 (en) | 2022-03-14 |
| CN110491834A (en) | 2019-11-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20050070075A1 (en) | Laser beam processing method and laser beam machine | |
| TWI697946B (en) | Wafer processing method | |
| CN105810633B (en) | Method for processing wafer | |
| TWI591702B (en) | A method of dividing a patterned substrate | |
| KR20160012073A (en) | Processing method of package substrate | |
| JP5946308B2 (en) | Wafer division method | |
| JP5495869B2 (en) | How to check laser processing groove | |
| JP5453123B2 (en) | Cutting method | |
| JP5946307B2 (en) | Wafer division method | |
| CN109421179B (en) | Processing method | |
| CN110491834B (en) | Method for processing object to be processed | |
| CN107527829B (en) | Wafer processing method | |
| US9455149B2 (en) | Plate-like object processing method | |
| TWI704608B (en) | Wafer processing method | |
| TWI834663B (en) | Processing methods of processed objects | |
| KR20190019839A (en) | Wafer processing method | |
| CN110504213B (en) | Wafer processing method | |
| KR20180113162A (en) | Laser machining method for wafer | |
| KR102668028B1 (en) | Method for processing workpiece | |
| TWI831925B (en) | Wafer processing methods | |
| TWI590317B (en) | Method of dividing plate-like workpieces | |
| TWI745547B (en) | Processing method of processed objects | |
| JP2021178338A (en) | Laser processing method | |
| KR102670177B1 (en) | Wafer processing method | |
| JP6837712B2 (en) | Wafer processing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |