KR20160012073A - Processing method of package substrate - Google Patents

Processing method of package substrate Download PDF

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Publication number
KR20160012073A
KR20160012073A KR1020150094520A KR20150094520A KR20160012073A KR 20160012073 A KR20160012073 A KR 20160012073A KR 1020150094520 A KR1020150094520 A KR 1020150094520A KR 20150094520 A KR20150094520 A KR 20150094520A KR 20160012073 A KR20160012073 A KR 20160012073A
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Prior art keywords
package
package substrate
divided
substrate
line
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KR1020150094520A
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Korean (ko)
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지카라 아이카와
구니미츠 다카하시
사키 기무라
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가부시기가이샤 디스코
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Publication of KR20160012073A publication Critical patent/KR20160012073A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/298—Semiconductor material, e.g. amorphous silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/98—Methods for disconnecting semiconductor or solid-state bodies

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Laser Beam Processing (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Dicing (AREA)

Abstract

Provided is a method for processing a package substrate, which is capable of dividing a package substrate into individual package devices, without degrading the quality of the package device. The method for processing the package substrate, in which a device is disposed in each of a plurality of regions partitioned by a division-planned line formed on a surface of a thermal diffusion substrate in a grid shape and the package substrate including the plurality of devices coated with a resin is divided into the individual package devices along the division-planned line, comprises: a resin removing process of removing the resin coating the plurality of devices along the division-planned line by irradiating a pulse laser beam along the division-planned line of the package substrate, thereby exposing the surface of the thermal diffusion substrate along the division-planned line; and a package device producing process of producing the individual package devices by dividing the package substrate, on which the resin removing process has been performed, along the division-planned line. In the resin removing process, the irradiated pulse laser beam is a CO_2 laser, and a pulse width thereof is set to several μs or less.

Description

[0001] PROCESSING METHOD OF PACKAGE SUBSTRATE [0002]

A package substrate on which a plurality of devices are arranged in a plurality of regions partitioned by a line to be divided formed in a lattice pattern on the surface of a thermal diffusion substrate and in which the plurality of devices are covered with a resin layer, And to a method of processing the same.

Devices such as ICs, LSIs, and LEDs may be mounted on a heat-diffusing substrate called a heat sink in order to prevent the function from being deteriorated by heat generation. The package device in which the device is mounted on the heat diffusion substrate is manufactured by dividing the package substrate on which a plurality of devices are provided on the surface of the heat diffusion substrate. The heat spreading substrate is formed of ceramics having a high thermal conductivity such as aluminum nitride in addition to metals such as stainless steel and copper (see, for example, Patent Document 1).

The package substrate is provided with a plurality of devices through a bonding agent at predetermined intervals to be a line to be divided on the surface of the thermal diffusion substrate and a silicone resin is coated on the upper surface of the optical device to lighten the light emitted by the optical device .

In order to cut the package substrate along the line to be divided along the line to be divided into individual package devices, a cutting device having a cutting blade called a dicer is used.

As a method of cutting the package substrate along a line to be divided, a method of irradiating a laser beam along a line to be divided is also used.

Patent Document 1: JP-A-2009-224683

Thus, when the package substrate is cut along the line to be divided by the cutting apparatus having the cutting blade, gouging occurs in the silicone resin coated on the surface of the heat diffusion substrate, so that the processing feed rate is 5 mm / sec It is necessary to set the speed to a low speed, which is a problem that the productivity is poor.

On the other hand, in the method of cutting the package substrate along the line to be divided by irradiating the laser beam along the line to be divided of the package substrate, both sides of the laser processing groove are processed into a tapered shape and the scorch So that the quality of the package device is remarkably deteriorated.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and it is a main object of the present invention to provide a method of processing a package substrate that can divide a package substrate into individual package devices without deteriorating the quality of the package device.

According to an aspect of the present invention, there is provided a semiconductor device comprising: a plurality of devices arranged in a plurality of regions partitioned by lines to be divided formed in a lattice pattern on a surface of a heat diffusion substrate; A method of processing a package substrate for dividing one package substrate into individual package devices along a line to be divided,

A resin removing step of irradiating a pulse laser beam along a line to be divided of the package substrate to expose the resin covering the plurality of devices along the line to be divided so that the surface of the thermal diffusion substrate is exposed along the line to be divided;

And a package device generating step of generating individual package devices by dividing the package substrate on which the resin removing process has been performed along a line to be divided,

Wherein the pulsed laser beam irradiated in the resin removing step is a CO 2 laser, and the pulse width is set to several microseconds or less.

The heat diffusion substrate is formed of ceramics of aluminum nitride, and the resin is a silicone resin.

The package device forming process divides the heat diffusion substrate into individual package devices by cutting the heat diffusion substrate along a line to be divided by a cutting blade.

In addition, the package device generating step is divided into individual package devices by irradiating a laser beam along a line to be divided of the heat diffusion substrate.

A method of processing a package substrate according to the present invention includes the steps of irradiating a pulse laser beam along a line to be divided of a package substrate to remove a resin covering a plurality of devices along a line to be divided, The pulse laser beam to be irradiated in the resin removing step is a CO 2 laser and since the pulse width is set to several microseconds or less, unlike the cutting process by the cutting blade, The resin removing step can be efficiently performed without causing gouging on the resin.

In addition, since the wavelength of the CO 2 laser irradiated in the resin removal step is good for the silicone resin and the pulse width is as short as several microseconds or less, no scorch occurs, and a taper is formed on both sides of the laser- The quality of the package substrate is not deteriorated.

1 is a perspective view and a cross-sectional view of a package substrate processed according to a method of processing a package substrate according to the present invention;
BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method of processing a package substrate,
3 is an explanatory diagram of a resin removing step in a method of processing a package substrate according to the present invention.
4 is a perspective view showing a main part of a cutting apparatus for performing a heat diffusing board cutting step as a package device producing step in a method of processing a package substrate according to the present invention.
Fig. 5 is a perspective view showing a state in which a package substrate on which a resin removing process is performed is held on a holding table of the cutting apparatus shown in Fig. 4; Fig.
6 is an explanatory diagram of a heat diffusion substrate cutting step as a package device producing step in the method of processing a package substrate according to the present invention.
7 is a perspective view showing a main part of a laser machining apparatus for carrying out a thermal diffusion substrate laser cutting process as a package device producing step in a method of processing a package substrate according to the present invention.
Fig. 8 is a perspective view showing a state in which a package substrate on which a resin removing step is performed is held on a holding table of the laser machining apparatus shown in Fig. 7; Fig.
9 is an explanatory diagram of a heat-diffusing-substrate laser cutting process as a package device producing process in the method of processing a package substrate according to the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, preferred embodiments of a method of processing a package substrate according to the present invention will be described in more detail with reference to the accompanying drawings.

1 (a) and 1 (b) are a perspective view and a cross-sectional view of a package substrate as a workpiece. The package substrate 2 shown in Figs. 1 (a) and 1 (b) has a lattice-like line to be divided 22 (hereinafter referred to as " lattice ") on a surface 21a of a heat diffusion substrate 21 made of aluminum nitride ceramics having a thickness of 400 [ A device 23 such as a plurality of LEDs is installed through the bonding agent at a predetermined interval so as to cover the device 23 and a predetermined distance to be a line to be divided 22 is filled with a silicone resin 24 ). The silicon resin 24 is formed to have a thickness of, for example, 300 占 퐉 from the surface 21a of the heat diffusion substrate 21.

In order to divide the package substrate 2 along a plurality of lines to be divided 22, a pulse laser beam is first irradiated along the line to be divided 22 of the package substrate 2 to form a resin To expose the surface of the thermal diffusion substrate 21 along the line to be divided 22 is performed by removing the resin to be divided along the line to be divided 22. This resin removing step is carried out using the laser processing apparatus shown in Fig. The laser machining apparatus 3 shown in Fig. 2 includes a holding table 31 as a holding means for holding a workpiece, and a laser beam irradiating means And an image pickup means (33) for picking up a workpiece held on the holding table (31). The holding table 31 is formed in a rectangular shape and includes an adsorption chuck support 311 and an adsorption chuck 312 mounted on the adsorption chuck support 311. The adsorption chuck 312 And the package substrate 2 is held by a suction means (not shown) on a surface that is a surface. The holding table 31 is configured to be rotatable by a rotation mechanism (not shown). The holding table 31 configured in this manner is moved in the processing feed direction indicated by the arrow X in Fig. 2 by a not-shown processing and feeding means, and is moved by the indexing feeding means (not shown) And is moved in the transport direction.

The laser beam irradiating means 32 includes a cylindrical casing 321 substantially horizontally arranged. In the casing 321, there is provided a pulsed laser beam oscillation means having a CO 2 laser oscillator and a repetition frequency setting means (not shown). A condenser 322 for condensing the pulsed laser beam emitted from the pulsed laser beam generating means is mounted on the distal end of the casing 321. The laser beam irradiating means 32 is provided with a light-converging point position adjusting means (not shown) for adjusting the position of the light-converging point of the pulsed laser beam condensed by the condenser 322.

The imaging means 33 mounted on the distal end of the casing 321 constituting the laser beam irradiation means 32 is constituted by an optical means such as a microscope or a CCD camera. send.

In order to perform the resin removing process by using the laser processing apparatus 3, the heat diffusion substrate 21 side of the package substrate 2 is first placed on the placement surface 31, which is the surface of the adsorption chuck 312 of the holding table 31, And suction means (not shown) is operated to suction-hold the package substrate 2 on the holding table 31 (package substrate holding step). The device 23 and the silicon resin 24 side of the package substrate 2 held on the holding table 31 are on the upper side. In this way, the holding table 31 holding the package substrate 2 is positioned directly below the imaging means 33 by means of processing and transfer means (not shown).

When the holding table 31 is positioned directly below the image pickup means 33, the image pickup means 33 and the control means (not shown) Execute the job. That is, the image pickup means 33 and the control means (not shown) adjust the alignment of the to-be-divided line 22 formed in the predetermined direction in the package substrate 2 and the condenser 322 of the laser beam irradiating means 32 Such as pattern matching, is performed to perform alignment of the machining area (alignment step). The machining area alignment is likewise performed on the line to be divided 22 extending in the direction orthogonal to the predetermined direction formed on the package substrate 2. [

3 (a), the holding table 31 is moved to the laser beam irradiation region 32 where the condenser 322 of the laser beam irradiating means 32 for irradiating the laser beam is located, as shown in FIG. 3A, And the predetermined line to be divided 22 is placed under the condenser 322. [ 3 (a), the package substrate 2 is positioned so that one end (the left end in Fig. 3 (a)) of the line to be divided 22 is positioned right under the condenser 322 do. 3 (a), the light-converging point P of the pulsed laser beam LB irradiated from the light condenser 322 is adjusted to the vicinity of the surface (upper surface) of the silicon resin 24. Next, the holding table 31 is irradiated with a pulsed laser beam whose pulse width is set to several microseconds or less as the CO 2 laser from the condenser 322 of the laser beam irradiating means 32, X1) at a predetermined machining feed rate. When the other end of the dividing line 22 (the right end in Fig. 3B) reaches the position directly under the condenser 322 as shown in Fig. 3B, the irradiation of the pulsed laser beam is stopped And stops the movement of the holding table 31 (resin removing step). 3 (c), the silicon resin 24 coated with the plurality of devices 23 is transferred to the laser processing groove 241 formed along the line to be divided 22 (Upper surface) of the heat diffusion substrate 21 is exposed along the line to be divided 22.

Since the pulsed laser beam to be irradiated in the above resin removing process is a CO 2 laser and the pulse width is set to several microseconds or less, unlike the cutting process by the cutting blade, 24 can be efficiently subjected to resin removing processing without causing gouging.

Since the wavelength of the CO 2 laser irradiated in the resin removing step is good for the silicone resin and the pulse width is as short as several microseconds or less, the wavelength of the CO 2 laser irradiated on both sides of the laser processing groove 241 So that the quality of the package substrate is not deteriorated.

Further, the resin removing step is performed under the following processing conditions, for example.

Wavelength of the laser beam: CO 2 laser (9.2 탆 to 10.6 탆)

Repetition frequency: 100 ㎑

Pulse width: 10 ㎱ to 5 ㎲

Average power: 40 W

Condensing spot diameter:? 100 m

Feeding speed: 180 mm / sec

The holding table 31 is rotated by 90 degrees so that the package substrate 2 held on the holding table 31 is moved in the direction (2) is subjected to a resin removing process along a line to be divided (22) formed in a direction orthogonal to the predetermined direction.

If the resin removing process is performed as described above, a package device creating process for creating individual package devices by dividing the package substrate 2 along the line to be divided 22 is performed. A first embodiment of this package device production process will be described with reference to Figs. 4 to 6. Fig.

The first embodiment of the package device production process is carried out using the cutting device 4 shown in Fig. The cutting apparatus 4 shown in Fig. 4 includes a holding table 41 as holding means for holding a workpiece, cutting means 42 for cutting the workpiece held on the holding table 41, And an image pickup means (43) for picking up a workpiece held on the workpiece (41). The holding table 41 is formed in a rectangular shape and is provided with a suction holding portion 410 protruding from the central portion of the surface thereof for sucking and holding the package substrate 2. On the upper surface (holding surface) of the suction holding portion 410, a clearance groove 411 is formed in a lattice shape in a region corresponding to the line to be divided 22 formed on the package substrate 2. The width of the margin groove 411 is set to 1 mm or more, and the laser machining groove 241 formed in the package substrate 2 is positioned within a predetermined range. A suction hole 412 is formed in each of a plurality of areas partitioned by the dividing line 22 in the suction holding part 410. The suction hole 412 is communicated with suction means not shown have. The holding table 41 is rotatable by a rotation mechanism (not shown). The holding table 41 thus configured is moved in the machining feed direction indicated by the arrow X in Fig. 4 by a cutting and providing means (not shown), and is moved by the indexing feeding means And is moved in the transport direction.

The cutting means 42 includes a spindle housing 421 disposed substantially horizontally, a rotating spindle 422 rotatably supported by the spindle housing 421, and a rotating spindle 422 mounted on the distal end of the rotating spindle 422 And the rotating spindle 422 is rotated in a direction indicated by an arrow 423a by a servomotor (not shown) provided in the spindle housing 421. [

The image pickup means (43) is made up of an optical means such as a microscope or a CCD camera, and sends the picked up image signal to control means (not shown).

Hereinafter, a package device production process performed using the above-described cutting apparatus 4 will be described.

The heat diffusion substrate 21 side of the package substrate 2 on which the resin removing process is performed is disposed on the holding surface which is the upper surface of the suction holding portion 410 of the holding table 41 as shown in Fig. Then, suction means (not shown) is operated to hold the package substrate 2 on the holding table 41 by suction (package substrate holding step). At this time, the individual package devices 230 are reliably sucked and held by the negative pressure acting on the plurality of suction holes 412 provided in the suction holding portion 410 of the holding table 41. The package substrate 2 held on the holding table 41 in this way has the laser processing groove 241 with the silicone resin 24 removed along the line along which the dividing is to be divided is the upper side.

If the package substrate holding step is performed as described above, the holding table 41 in which the package substrate 2 is held by suction is positioned directly under the imaging means 43 by a cutting providing means (not shown). When the holding table 41 is positioned directly below the image pickup means 43, the image pickup means 43 and the control means (not shown) execute an alignment operation for detecting a machining region to be laser-machined on the package substrate 2 do.

When alignment for detecting the cutting area of the package substrate 2 held on the holding table 41 is performed as described above, the holding table 41 holding the package substrate 2 is moved to the cutting work area (Left end in Fig. 6 (a)) of the laser machining groove 241 formed along the predetermined line to be divided 22 as shown in Fig. 6 (a) Position slightly to the right. Then, the cutting blade 423 is rotated in the direction indicated by the arrow 423a while further feeding the cutting blade 423 by a predetermined amount in the direction indicated by the arrow Z1 from the retreat position indicated by the two-dot chain line. The infeed / feed position is set so that the outer edge of the cutting blade 423 reaches the back (lower surface) of the heat diffusion board 21. 6A, the holding table 41 is moved at a predetermined cutting feed rate in the direction indicated by the arrow X1 in FIG. 6A. As a result, (the right end in Fig. 6A) of the laser machining groove 241 formed along the planned dividing line 22 formed on the package substrate 2 held on the holding table 41 as shown in Fig. The movement of the holding table 41 is stopped and the cutting blade 423 is raised to the retreated position indicated by the solid line in the direction indicated by the arrow Z2 if the cutting blade 423 reaches the left side slightly below the cutting blade 423. 6 (c), the thermal diffusion substrate 21 of the package substrate 2 has the cut grooves 211 (see FIG. 6) formed along the laser processing grooves 241 formed along the line to be divided 22 (Heat diffusion substrate cutting step).

Further, the thermal diffusion substrate cutting step is performed under the following processing conditions, for example.

Thickness of cutting blade: 80 탆

Diameter of cutting blade: 52 mm

Rotation speed of cutting blade: 20000 rpm

Cutting feed rate: 10 mm / sec

The holding table 41 is rotated by 90 degrees and the holding table 41 is held on the holding table 41. When the thermal processing is performed along the laser processing grooves 241 formed on the package substrate 2 in the predetermined direction, The thermal diffusion substrate cutting process is performed on the package substrate 2 along the laser processing grooves 241 formed in a direction orthogonal to the predetermined direction. As a result, as shown in FIG. 6D, the package substrate 2 is divided into the individual package devices 230. The individually divided package devices 230 are sucked and held by the suction holding portion 410 of the holding table 41 and held in the state of the package substrate. However, since the outer peripheral portion which does not constitute the package device of the package substrate 2 is not attracted and held by the holding table 41, the outer peripheral portion of the package substrate 2 is removed as a remnant from the holding table 41.

Next, a second embodiment of the package device generating step will be described with reference to Figs. 7 to 9. Fig. The second embodiment of the package device production process is carried out using the laser device 5 shown in Fig. The laser machining apparatus 5 shown in Fig. 7 includes a holding table 51 as a holding means for holding a workpiece, a laser beam irradiating means for irradiating a laser beam to the workpiece held on the holding table 51 And an image pickup means 53 for picking up an image of the workpiece held on the holding table 51. The holding table 51 is configured in the same manner as the holding table 41 of the cutting device 4 shown in Fig. That is, the holding table 51 is formed in a rectangular shape and is provided with a suction holding portion 510 protruding from the central portion of the surface to suck and hold the package substrate 2. On the upper surface (holding surface) of the suction holding section 510, a margin groove 511 is formed in a lattice shape in a region corresponding to the line to be divided 22 formed on the package substrate 2. [ The width of the margin groove 511 is 1 mm or more, and the laser machining groove 241 formed in the package substrate 2 is positioned within a predetermined range. A suction hole 512 is formed in each of a plurality of areas defined by the line to be divided 22 in the suction holding portion 510 and the suction hole 512 is communicated with a suction means have. The holding table 51 is rotatable by a rotation mechanism (not shown). The holding table 51 configured in this way is moved in the processing feed direction indicated by the arrow X in Fig. 7 by a not-shown processing transfer means, and is conveyed by the indexing conveying means (not shown) And is moved in the transport direction.

The laser beam irradiating means 52 includes a cylindrical casing 521 arranged substantially horizontally. In the casing 521, there is provided a pulsed laser beam oscillator having a pulse laser beam oscillator (not shown) and a repetition frequency setting means. A condenser 522 for condensing the pulsed laser beam emitted from the pulsed laser beam generating means is mounted on the distal end of the casing 521. The laser beam irradiating means 52 in the illustrated embodiment is provided with an assist gas injecting means 524 for blowing debris generated when the pulsed laser beam is irradiated from the condenser 522, . The laser beam irradiating means 52 is provided with a light-converging point position adjusting means (not shown) for adjusting the position of the light-converging point of the pulsed laser beam converged by the condenser 522.

The imaging means 53 mounted on the distal end of the casing 521 constituting the laser beam irradiation means 52 is constituted by an optical means such as a microscope or a CCD camera. send.

In order to perform the package device producing process using the laser machining apparatus 5, the resin removing step is performed on the holding surface, which is the upper surface of the suction holding section 510 of the holding table 51, as shown in Fig. 8 And the heat diffusion substrate 21 side of the package substrate 2 is disposed. Then, suction means (not shown) is operated so that the package substrate 2 is sucked and held on the holding table 51 (package substrate holding step). At this time, the individual package devices 230 are reliably sucked and held by the negative pressure acting on the plurality of suction holes 512 provided in the suction holding portion 510 of the holding table 51. Thus, the package substrate 2 held on the holding table 51 is held on the upper side by the laser machining groove 241 in which the silicon resin 24 is removed along the line to be divided 22.

If the package substrate holding step is carried out as described above, the holding table 51 in which the package substrate 2 is held by suction is positioned directly under the imaging means 53 by a cutting providing means (not shown). When the holding table 51 is positioned directly below the image pickup means 53, an alignment operation for detecting a machining area to be laser machined of the package substrate 2 is performed by the image pickup means 53 and control means do.

9 (a), the holding table 51 is moved in the direction of the laser beam irradiation region 52 where the condenser 522 of the laser beam irradiating means 52 for irradiating the laser beam is located, as shown in Fig. 9 (a) And the predetermined laser machining groove 241 is positioned right under the condenser 522. [ 9A, the package substrate 2 is positioned such that one end of the laser machining groove 241 (left end in FIG. 9A) is positioned right under the condenser 522, do. 9A, the light condensing point P of the pulsed laser beam LB irradiated from the light condenser 522 is converged on the bottom surface of the laser processing groove 241 (the surface of the heat spreading substrate 21) ] We adjust to the neighborhood. Next, the holding table 51 is irradiated with pulsed laser light of a wavelength having absorbency from the condenser 522 of the laser beam irradiating means 52 to the heat diffusing substrate 21 of the package substrate 2, (a) in a direction indicated by an arrow X1 at a predetermined processing feed speed. When the other end of the laser machining groove 241 (the right end in Fig. 9B) reaches the position directly below the condenser 522 as shown in Fig. 9B, the irradiation of the pulsed laser beam is stopped And stops the movement of the holding table 51 (thermal diffusion substrate laser cutting process). 9 (c), the thermal diffusion substrate 21 of the package substrate 2 is subjected to the laser processing groove 241 formed along the laser processing groove 241 212). In the heat-diffusing-substrate laser cutting process, the assist gas injection means 524 is operated, and air having a pressure of 1 MPa, for example, is injected into the machining portion formed by the pulsed laser beam irradiated from the condenser 522. As a result, a debris generated during processing by the pulsed laser beam is blown off and enters the clearance groove 511 formed in the holding table 51. Therefore, a debris generated when processing by the pulsed laser beam is not attached to the surface of the package device.

The heat-diffusing-substrate laser cutting process is performed under the following processing conditions, for example.

Wavelength of the laser beam: YAG laser (1.06 탆)

Repetition frequency: 18 kHz

Average power: 150 W

Condensing spot diameter:? 50 m

Feeding speed: 160 mm / sec

If the heat-diffusing substrate laser cutting process described above is performed along all the laser processing grooves 241 formed in the predetermined direction on the package substrate 2, the holding table 51 is rotated 90 degrees and held on the holding table 51 The laser processing grooves 241 formed in the package substrate 2 in the direction orthogonal to the predetermined direction are subjected to the thermal diffusion substrate cutting process. As a result, the package substrate 2 is divided into the individual package devices 230 as shown in Fig. 9 (d). The individually divided package devices 230 are sucked and held by the suction holding portion 510 of the holding table 51 and held in the state of the package substrate. However, since the outer peripheral portion which does not constitute the package device of the package substrate 2 is not attracted and held by the holding table 51, the outer peripheral portion is removed as a remnant from the holding table 51.

Since the thermal-diffusion-substrate laser cutting process described above is performed by laser machining instead of cutting by a cutting blade, burrs do not occur even if the heat-diffusing substrate 21 is formed of metal, The problem of deteriorating the quality is solved.

Further, since the heat-diffusing-substrate laser cutting process is performed by laser machining instead of cutting by a cutting blade, even if the heat-diffusing substrate 21 is formed of ceramics, it can be cut smoothly and productivity is improved.

Although the present invention has been described based on the embodiments shown in the drawings, the present invention is not limited to the embodiments, and various modifications are possible within the scope of the present invention. For example, in the above-described embodiment, the holding table 31 of the laser machining apparatus 3 and the holding table 41 of the cutting apparatus 4 and the holding table 51 of the laser machining apparatus 5 have different structures The holding table 31 of the laser processing apparatus 3 may have the same structure as that of the holding table 41 of the cutting apparatus 4 or the holding table 51 of the laser processing apparatus 5 .

2: Package substrate
21: Thermal diffusion substrate
22: Line to be divided
23: Device
24: Silicone resin
3: Laser processing equipment
31: Retaining table of laser machining apparatus
32: laser beam irradiation means
322: Concentrator
33:
4: Cutting device
41: Retaining table of cutting apparatus
411: Clearance groove
412: suction hole
42: cutting means
423: cutting blade
43:
5: Laser processing equipment
51: Retaining table of laser machining apparatus
511: Clearance groove
512: suction hole
52: laser beam irradiation means
522: Concentrator
524: assist gas injection means
53:

Claims (4)

A device is disposed in each of a plurality of regions partitioned by a line to be divided formed in a lattice pattern on a surface of a heat diffusion substrate and a package substrate coated with a resin by the plurality of devices is divided into individual package devices A method of processing a package substrate to be divided,
A resin removing step of irradiating a pulse laser beam along a line to be divided of the package substrate to expose the resin covering the plurality of devices along the line to be divided so that the surface of the thermal diffusion substrate is exposed along the line to be divided;
And a package device generating step of generating individual package devices by dividing the package substrate on which the resin removing process has been performed along a line to be divided,
Wherein the pulsed laser beam irradiated in the resin removing step is a CO 2 laser, and the pulse width is set to several microseconds or less. The method of processing a package substrate according to claim 1, wherein the heat diffusion substrate is formed of ceramics of aluminum nitride, and the resin is a silicone resin. The method of manufacturing a package substrate according to claim 1 or 2, wherein the package device forming step divides the heat diffusion substrate into individual package devices by cutting the heat diffusion substrate along a line to be divided by a cutting blade. The method of manufacturing a package substrate according to claim 1 or 2, wherein the package device forming step is divided into individual package devices by irradiating a laser beam along a line to be divided of the heat diffusion substrate.
KR1020150094520A 2014-07-23 2015-07-02 Processing method of package substrate KR20160012073A (en)

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JP2017199834A (en) * 2016-04-28 2017-11-02 株式会社ジェイデバイス Semiconductor package and method of manufacturing the same
JP2018113281A (en) * 2017-01-06 2018-07-19 株式会社ディスコ Processing method of resin package substrate
JP6821261B2 (en) * 2017-04-21 2021-01-27 株式会社ディスコ Processing method of work piece
CN109920732B (en) * 2017-12-12 2021-02-12 中芯国际集成电路制造(上海)有限公司 Cutting method of semiconductor packaging device and packaging method of semiconductor device
JP7076776B2 (en) * 2018-03-30 2022-05-30 三星ダイヤモンド工業株式会社 Inorganic film laminated resin substrate dividing method and dividing device
JP7422526B2 (en) 2019-12-03 2024-01-26 ダウ・東レ株式会社 How to cut a laminate containing a silicone layer
CN115039212A (en) 2020-02-27 2022-09-09 应用材料意大利有限公司 Support device for supporting substrate, method of processing substrate, and semiconductor substrate
CN111531287A (en) * 2020-05-07 2020-08-14 苏州融睿电子科技有限公司 Packaging shell, processing method and manufacturing method thereof, laser and storage medium

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