CN110482475A - A kind of capacitance pressure transducer, based on MEMS - Google Patents
A kind of capacitance pressure transducer, based on MEMS Download PDFInfo
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- CN110482475A CN110482475A CN201910628306.4A CN201910628306A CN110482475A CN 110482475 A CN110482475 A CN 110482475A CN 201910628306 A CN201910628306 A CN 201910628306A CN 110482475 A CN110482475 A CN 110482475A
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- cantilever
- pressure
- support column
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- cantilever beam
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
- B81B3/0037—For increasing stroke, i.e. achieve large displacement of actuated parts
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
- G01L1/142—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
- G01L1/148—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors using semiconductive material, e.g. silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0118—Cantilevers
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
One kind being based on MEMS capacitive pressure sensor, and structure has three parts, comprising: substrate, pressure film, fixed lower electrode plate, silica supporting layer, cantilever power on step, support column, sealing cover.Wherein substrate, pressure-sensitive film, fixed lower electrode plate is first part；Second part is silica supporting layer；Part III is cantilever electric pole plate, and support column, sealing cover, complete sensor structure is by this three parts by being bonded.It is deformed when pressure-sensitive film is by external pressure, cantilever beam is pushed up upwards by support column, if step length is L on cantilever, support column to pivot distance be l, the ratio between displacement and the displacement of cantilever top crown are l/L after then film is pressurized, spacing amplification between cantilever beam end electric pole plate and fixed lower electrode plate, then measures capacitance change by external software and hardware, is converted into pressure value.Pass through support column arrangement in the present invention for the electrode plate of cantilever beam end for displacement equations, increases Sensitivity in Pressure Sensors.
Description
Technical field
The invention belongs to the fields micro-electromechanical technology (MEMS), and in particular to it is a kind of with it is highly sensitive, high range based on
The capacitance pressure transducer, of MEMS.
Background technique
MEMS (MEMS) is to collect micro-structure, microactrator, microsensor and signal processing and control circuit very
To interface, communication and power supply etc. in the microdevice or system of one.MEMS have low manufacture cost, quality it is small, it is small in size,
Performance is high, the advantages that being easily integrated.In recent years, MEMS technology high speed development is widely used, such as in space flight, automobile, biological skill
The fields such as art.In microsensor, pressure sensor is a kind of relatively common also important sensor, general to have pressure drag
The pressure sensor of the principles such as formula, piezoelectric type, condenser type.The linearity of piezoresistive pressure sensor is fine in moment sensor,
But precision is general, and sensitivity is relatively low；Capacitance pressure transducer, the advantages that precision is high by comparison, and temperature drift is small.Such as patent
The capacitance pressure transducer, of 201680043400.8 descriptions forms capacitor by the chamber between first electrode and second electrode
Carry out measured pressure value, but this sensor medium sensitivity also becomes smaller because of pedestal outstanding in chamber.In patent
Sensor in 201410117606.3 descriptions is the structure by using suppressed column, shortens highest and lower pole that top crown arches upward
The distance between plate improves induction efficiency and sensibility, but this structure is relative complex, and processing technology becomes complicated cumbersome.Specially
Sensor in 201610868540.0 description of benefit is touch sensor, and the upper/lower electrode of sensor is arranged in external fluid
In, the pressure condition in fluid can be measured, but the dielectric constant of different fluids is different, and different capacitors is needed to demarcate, and grasps
Make cumbersome.And for film as float electrode, Normal Displacement is smaller in that patent, if its sensitivity need to be improved, needs to increase
Big device size is cost.In pressure sensor described in patent 201710688334.6, island is increased on mobile film
Shape structural thickness is overload-resistant to realize, but it is lost the effect of high range simultaneously, and sensitivity also has corresponding loss.
The above patent is all shown in Design of Capacitance Pressure Transducer, limits sensor because of the limitation of pressure-sensitive film
Sensitivity.In order to need film that there is biggish amount of deflection with larger sensitivity generally in Design of Capacitance Pressure Transducer,
The thickness of film is by as far as possible small or increases film size.Since very thin film air-tightness is relatively difficult to guarantee, reduce thin
Film thickness manufacture is not easy, and the phenomenon that size sensor is bigger or sensitivity is lower finally occurs.
Summary of the invention
The shortcomings that in view of the prior art described above, the invention discloses a kind of the novel based on MEMS's of high sensitivity
The structure of capacitance pressure transducer,.
The capacitor fundamental formular of capacitance pressure transducer, are as follows:In formula: ε0For in vacuum
Dielectric constant, εrThe relative dielectric constant of insulating layer between pole plate；The thickness of h insulating layer between two-plate；When d is zero load
Initial spacing between capacitor two-plate；ω (x, y) is the vertical displacement of the middle plane of movable plate.It can be seen from formula
The external world is the size for changing capacitance by the spacing between two electrode plates.Therefore we improve the spacing between capacitor plate
It can effectively raising capacitance sensitivity.
In the present invention, using micromechanics lever principle, the efficient deformation of film is amplified by lever, i.e. end
Displacement L and fulcrum at the ratio between displacement l be L/l.Fig. 1 is its schematic diagram.Pass through this principle, it is possible to increase the limit between pole plate away from
From to improve its sensitivity.
The specific technical solution that the present invention uses is that a kind of capacitance pressure transducer, based on MEMS, structure has three
Part, comprising: substrate, pressure film, fixed lower electrode plate, silica supporting layer, cantilever power on step, support column, sealing
Lid.Wherein substrate, pressure film, fixed lower electrode plate is first part；Second part is silica supporting layer；Part III
For cantilever electric pole plate, support column, sealing cover.Complete sensor structure is by this three parts by being bonded.Wherein third portion
When dividing bonding, rectangular electrode plate is corresponding with fixed lower electrode Board position, thus cantilever beam face circular membrane.
Further, substrate is characterized by rectangular-shaped silicon crystal, forms circular pressure-sensitive film by microbody processing technology；
And thin film center is at the one third of substrate；Then it sputters one layer of metallic film on substrate again and forms fixed lower electrode.
Further, electrode is characterized by except splash-proofing sputtering metal is not thin for the circumscribed rectangle of round pressure-sensitive film under described fixation
Film, substrate thin film planar other positions all by sputtered metal film, ultimately form fixed lower electrode plate.
Further, described silica supporting layer is rectangular shaped rim, and frame inside dimension is not less than round pressure-sensitive
The size of the circumscribed rectangle of film.
Further, sealing cover is characterized by rectangular housing, contact surface inside dimension and two in described Part III
Silica supporting layer contact surface inside dimension is consistent.It is produced on cantilever on sealing cover contact surface by Surface-Micromachining Technology
Electrode plate structure
Further, described cantilever electric pole plate is characterized by the shape that cantilever beam and rectangular slab are composed, In
The position of cantilever beam face circle pressure-sensitive film the center point, deposits support column, has at its cantilever beam root on a cantilever beam
Rectangular apertures, effect are to reduce the rigidity of cantilever beam.Sputtering has one layer of metallic film in cantilever electric pole plate structure, finally
As cantilever electric pole plate.
Further, its diameter of described support column is less than the width of cantilever beam, and height is silica supporting layer
Height, i.e., so that its support column is withstood on round pressure-sensitive film at a distance from round pressure-sensitive film without pressured state Analysis of A Cantilever Beam Under
The center point ultimately forms the micro-structure of similar lever.When pressure-sensitive film compressive deformation will jack up cantilever beam by support column, thus
The distance between bottom crown in change, if step length is L on cantilever, support column to pivot distance is l, then position after film is pressurized
Moving the ratio between displacement with cantilever top crown is l/L, increases the variable range between pole plate with this, so that transducer sensitivity increases
Greatly.
The invention has the advantages that due to the principle that steel microtube is utilized, when pressure-sensitive film is by external pressure time-varying
Shape is pushed up cantilever beam by support column upwards, then displacement equations are improved the variable quantity of capacitor by the electrode plate of cantilever beam end,
Increase its sensitivity.By adjusting the design of round pressure-sensitive film position, thus it is possible to vary membrane displacement increment ratio, thus
To different transducer ranges.Can also be by adjusting the rigidity of cantilever beam, e.g., width, thickness, shape etc. can be designed height
The pressure sensor of range.Capacitance pressure transducer, structure based on MEMS of the invention is simple, and production technology is also easy to give birth to
It produces, reduces the production cost.
Detailed description of the invention
Fig. 1 is schematic illustration
Fig. 2 is overall structure of the present invention
Fig. 3 is Section A-A cross-sectional view
Fig. 4 is first part and second part structural schematic diagram (a) and its cross-sectional view (b) of the invention
Fig. 5 is Part III structural schematic diagram (a) and its cross-sectional view (b) of the invention
Marked in the figure: first part 1, pressure-sensitive film 2, substrate 3, fixed lower electrode plate 4, silica supporting layer 5, support
Column 6, sealing cover 7, cantilever electric pole plate structure 8, metal electrode 9, Part III 10, end electric pole plate 11, cantilever beam 12
Specific embodiment
With reference to the accompanying drawings and examples to further instruction of the present invention:
As shown in Figures 2 and 3, the present invention provides a kind of capacitance pressure transducer, based on MEMS, including includes: substrate
3, pressure-sensitive film 2 fixes lower electrode plate 4, silica supporting layer 5, and cantilever powers on step 8, and 9, support column 6, sealing cover 7.Its
Middle substrate 3, pressure-sensitive film 2, fixed lower electrode plate 4 is first part 1, and the material of substrate 1 is silicon；Second part 5 is titanium dioxide
Silicon supporting layer 5；Part III 10 is cantilever electric pole plate 8,9, support column 6, sealing cover 7.Complete sensor structure is as shown in Figure 4
Second part 5 be grown in first part 1, be then bonded with Part III 10 shown in fig. 5.Wherein 10 key of Part III
Its rectangular electrode plate 11 is corresponding with fixed lower 4 position of electrode plate when conjunction, thus 12 face circle pressure-sensitive film 2 of cantilever beam circle
The heart.Substrate silicon 3 obtains pressure-sensitive film 2 by body micro-processing technology, and wherein the shape of film 2 is circle.Position can be according to setting
Meter point on the basis of central point is partial to substrate center i.e. at side three minutes one.Then it is splashed on 2 layers of film by sputtering technology
Project fixed lower electrode plate 4.Second part is silica supporting layer 5, and CVD technology is selected to be deposited directly to consolidating for first part
It fixs 4 on electrode.Part III 10 is made of sealing cover 7, cantilever electric pole plate 8,9 and support column 6, and sealing cover 7 can be by
Microbody processing technology generates, and then forms cantilever electric pole plate structure 8 by deposition on sealing cover 7, then passes through sputtering gold
Belong to electrode 9 and ultimately form cantilever electric pole plate 8,9, next can pass through deposition technique depositing support column 6.Finally by bonding
Three parts are combined.
Its working principle is that deformed when pressure-sensitive film 2 is by external pressure, it is by support column 6 that cantilever beam 12 is upward
Top, steel microtube principle as shown in Figure 1, if step length is L on cantilever, distance is l at support column 6 to 12 fulcrum of cantilever beam,
Displacement and cantilever top crown 8, the ratio between 9 displacement are l/L after then pressure-sensitive film 2 is pressurized, and pass through displacement equations, 12 end of cantilever beam
Spacing amplification between electric pole plate 11 and fixed lower electrode plate 4, increases the variable range between pole plate.Then pass through outside
Software and hardware measures capacitance change and is converted into pressure value.Pass through support column 6 in the present invention for the electrode of 12 end of cantilever beam
Displacement equations are then improved the variable quantity of capacitor by plate 11, increase its sensitivity.It wherein can be by adjusting round pressure-sensitive film
2 position, thus it is possible to vary 2 displacement increment ratio of film, that is, l/L value, to obtain different transducer ranges.It can also pass through
The rigidity of cantilever beam 12 is adjusted, such as: width, thickness, shape etc. can be designed the pressure sensor of high range.
Claims (7)
1. a kind of capacitance pressure transducer, based on MEMS characterized by comprising substrate, pressure-sensitive film, fixed lower electrode
Plate, silica supporting layer, cantilever power on step, support column, sealing cover；Structure includes three parts, wherein substrate, and pressure is thin
Film, fixed lower electrode plate is first part；Second part is silica supporting layer, and second part is directly given birth at first
Point；Part III is cantilever electric pole plate, support column, sealing cover；Complete sensor structure is by being bonded；Wherein third portion
Its rectangular electrode plate is corresponding with fixed lower electrode Board position when dividing bonding, thus cantilever beam face circular membrane.
2. according to claim 1 based on the capacitance pressure transducer, of MEMS, it is characterised in that: substrate is rectangular-shaped silicon wafer
Body forms circular pressure-sensitive film by microbody processing technology；And thin film center is at the one third of substrate；Then exist again
One layer of metallic film is sputtered on substrate forms fixed lower electrode.
3. according to claim 1,2 capacitance pressure transducer, based on MEMS, it is characterised in that: under described fixation
Electrode is characterized by metallic film sputtering on substrate, but does not sputter at round pressure-sensitive film.
4. according to claim 1 based on the capacitance pressure transducer, of MEMS, it is characterised in that: described silica
Supporting layer is rectangular shaped rim, and frame inside dimension is not less than the size of the circumscribed rectangle of round compression film, using CVD technology, directly
It connects under the fixation for being deposited on first part on electrode, acts on to separate power-on and power-off pole plate.
5. according to claim 1 based on the capacitance pressure transducer, of MEMS, it is characterised in that: described Part III
Middle sealing cover is characterized by rectangular housing, and contact surface inside dimension is consistent with silica supporting layer contact surface inside dimension.Sealing
By Surface-Micromachining Technology on lid contact surface, cantilever electric pole plate structure is produced.
6. according to claim 1,5 capacitance pressure transducer, based on MEMS, it is characterised in that: on described cantilever
Electrode plate is characterized by cantilever beam and is composed with rectangular slab；It is deposited with support column on a cantilever beam, support column position is sensing
Device will be contacted with round pressure-sensitive film the center point after completing, effect is connecting cantilever beam and pressure-sensitive film；On a cantilever beam
There are rectangular apertures, effect is to reduce the rigidity of cantilever beam at its cantilever beam root；It is sputtered in cantilever electric pole plate structure
There is one layer of metallic film, as cantilever electric pole plate.
7. according to claim 1,5,6 capacitance pressure transducer,s based on MEMS, it is characterised in that: described support
Column its, diameter be less than cantilever beam width, height be silica supporting layer height, i.e., without pressured state Analysis of A Cantilever Beam Under with
The distance of round pressure-sensitive film makes its support column withstand on the center point of round pressure-sensitive film, ultimately forms similar lever construction, when
Pressure-sensitive film compressive deformation will jack up cantilever beam by support column, to change the distance between upper bottom crown, if cantilever higher level
Plate length is L, and support column to pivot distance is l, then the ratio between displacement and the displacement of cantilever top crown are l/L after film is pressurized, with
This increases the variable range between pole plate, so that transducer sensitivity increases.
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| CN201910628306.4A CN110482475A (en) | 2019-07-12 | 2019-07-12 | A kind of capacitance pressure transducer, based on MEMS |
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| CN201910628306.4A CN110482475A (en) | 2019-07-12 | 2019-07-12 | A kind of capacitance pressure transducer, based on MEMS |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112229749A (en) * | 2020-09-02 | 2021-01-15 | 厦门大学 | Micro-nano structure mechanical characteristic parameter measuring device, measuring plate and measuring method |
| CN113218558A (en) * | 2021-05-08 | 2021-08-06 | 广西大学 | Capacitance type six-dimensional force sensor capacitor plate displacement calculation method |
| CN113670485A (en) * | 2021-09-01 | 2021-11-19 | 青岛芯笙微纳电子科技有限公司 | High-performance MEMS pressure sensor and manufacturing method thereof |
| WO2024041638A1 (en) * | 2022-08-26 | 2024-02-29 | 青岛歌尔智能传感器有限公司 | Differential-capacitance-type mems pressure sensor and manufacturing method therefor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130154054A1 (en) * | 2011-12-15 | 2013-06-20 | International Business Machines Corporation | Micro-electro-mechanical structure (mems) capacitor devices, capacitor trimming thereof and design structures |
| CN103234669A (en) * | 2013-03-29 | 2013-08-07 | 厦门大学 | Pressure sensor utilizing electrostatic negative stiffness and production method of pressure sensor |
| CN104515640A (en) * | 2013-10-08 | 2015-04-15 | 无锡华润上华半导体有限公司 | Capacitive MEMS (micro-electromechanical system) pressure sensor |
| CN105043606A (en) * | 2015-07-10 | 2015-11-11 | 东南大学 | Capacitive pressure sensor and preparation method |
| WO2017215809A1 (en) * | 2016-06-13 | 2017-12-21 | Robert Bosch Gmbh | Microelectromechanical microphone |
-
2019
- 2019-07-12 CN CN201910628306.4A patent/CN110482475A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130154054A1 (en) * | 2011-12-15 | 2013-06-20 | International Business Machines Corporation | Micro-electro-mechanical structure (mems) capacitor devices, capacitor trimming thereof and design structures |
| CN103234669A (en) * | 2013-03-29 | 2013-08-07 | 厦门大学 | Pressure sensor utilizing electrostatic negative stiffness and production method of pressure sensor |
| CN104515640A (en) * | 2013-10-08 | 2015-04-15 | 无锡华润上华半导体有限公司 | Capacitive MEMS (micro-electromechanical system) pressure sensor |
| CN105043606A (en) * | 2015-07-10 | 2015-11-11 | 东南大学 | Capacitive pressure sensor and preparation method |
| WO2017215809A1 (en) * | 2016-06-13 | 2017-12-21 | Robert Bosch Gmbh | Microelectromechanical microphone |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112229749A (en) * | 2020-09-02 | 2021-01-15 | 厦门大学 | Micro-nano structure mechanical characteristic parameter measuring device, measuring plate and measuring method |
| CN112229749B (en) * | 2020-09-02 | 2021-07-09 | 厦门大学 | Micro-nano structure mechanical characteristic parameter measuring device, measuring plate and measuring method |
| CN113218558A (en) * | 2021-05-08 | 2021-08-06 | 广西大学 | Capacitance type six-dimensional force sensor capacitor plate displacement calculation method |
| CN113670485A (en) * | 2021-09-01 | 2021-11-19 | 青岛芯笙微纳电子科技有限公司 | High-performance MEMS pressure sensor and manufacturing method thereof |
| WO2024041638A1 (en) * | 2022-08-26 | 2024-02-29 | 青岛歌尔智能传感器有限公司 | Differential-capacitance-type mems pressure sensor and manufacturing method therefor |
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