CN110473939A - A kind of back contacts large scale battery component transparent flexible conduction core plate and preparation method thereof - Google Patents
A kind of back contacts large scale battery component transparent flexible conduction core plate and preparation method thereof Download PDFInfo
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- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 9
- 229920005570 flexible polymer Polymers 0.000 claims abstract description 6
- 238000000576 coating method Methods 0.000 claims description 33
- 239000011248 coating agent Substances 0.000 claims description 30
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 15
- 229920006254 polymer film Polymers 0.000 claims description 12
- 235000019441 ethanol Nutrition 0.000 claims description 10
- 239000002904 solvent Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 7
- 238000000608 laser ablation Methods 0.000 claims description 7
- 238000007654 immersion Methods 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 4
- -1 poly- naphthalenedicarboxylic acid Glycol ester Chemical class 0.000 claims description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 125000005909 ethyl alcohol group Chemical group 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 230000001360 synchronised effect Effects 0.000 claims description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical group CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims 1
- 239000007888 film coating Substances 0.000 claims 1
- 238000009501 film coating Methods 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims 1
- 238000013021 overheating Methods 0.000 claims 1
- 239000002994 raw material Substances 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000011109 contamination Methods 0.000 abstract description 2
- 238000005265 energy consumption Methods 0.000 abstract description 2
- 238000012423 maintenance Methods 0.000 abstract description 2
- 238000003860 storage Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 34
- 239000011162 core material Substances 0.000 description 29
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 4
- 239000011112 polyethylene naphthalate Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000005030 aluminium foil Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
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- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910021418 black silicon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001246 colloidal dispersion Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 239000005457 ice water Substances 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
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- 239000010703 silicon Substances 0.000 description 1
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- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to a kind of back contacts large scale battery component transparent flexible conduction core plates and preparation method thereof, belong to photovoltaic apparatus technical field.Transparent flexible conduction core plate of the invention includes the transparent conductive oxide being attached in flexible polymer film substrate.Its advantages: raw material are richer, and component cost can be greatly reduced.For general components, flexible unit and double-side assembly, breaches metallic conduction route core plate and the application of back contact battery is limited, have wide range of applications.It avoids the problem that metallic conduction route core plate is oxidized, reduces the maintenance and warehouse cost of raw material and product in storage and use process, and improve the reliability of component.To the of reduced contamination of environment, and the production energy consumption of transparent flexible conduction core plate is low, and size is bigger, can satisfy the use demand of bigger photovoltaic module.
Description
Technical field
The present invention relates to a kind of back contacts large scale battery component transparent flexible conduction core plates and preparation method thereof, belong to light
Lie prostrate equipment technical field.
Background technique
Back contact solar cell and component can obtain higher power and reliability because of its unique structure design.In
In current component technology application, the size of the back contact solar cell piece of mainstream is 156.75*156.75mm and 158.75*
158.75mm, using P-type silicon single crystal combination PERC and black silicon making herbs into wool technology, the energy conversion efficiency of cell piece be can achieve
23%, and can guarantee 30 years power generation service life, this can enable it to have lower degree electricity relative to conventional grid line type component
Cost.But for its power cost, still there are the potentiality further decreased.Using the electricity of larger size such as 200*200mm
Pond piece can reduce the power cost of component.In current back contact battery component, the conducting wire core material of mainstream is
Copper foil and copper aluminium foil, they cause back contact battery to rely on excellent electric conductivity but simultaneously also with high cost
Two-sided back contact battery component can not be developed in metallic conduction route core plate, has limited to application range.Currently based on metal oxygen
The main production method of the transparent conductive film of compound is chemical vapor deposition, and magnetron sputtering plating, vapor deposition etc., they have skill
The disadvantages of art complexity, highly energy-consuming and low yield.Also, it due to being limited by technology and cost etc., can not prepare larger-size
Flexible transparent conductive film, it is difficult to be applied to back contacts large scale solar cell module.
Summary of the invention
The purpose of the present invention is being adapted to core material defect for no large scale of the existing technology, propose that a kind of back connects
Large scale battery component transparent flexible conduction core plate and preparation method thereof is touched, cost is reduced, expands back contacts large scale battery
Application range.
The present invention solves technical problem by the following technical programs: a kind of back contacts large scale battery component transparent flexible is led
Battery core plate, including the transparent conductive oxide being attached in flexible polymer film substrate, the flexible polymer film substrate
It is polyethylene terephtalate or polyethylene naphthalate PEN, the transparent conductive oxide is the oxidation of indium tin
Object ITO and Fluorin doped stannic oxide FTO.Transparent conductive oxide such as indium tin oxide (ITO) and Fluorin doped stannic oxide (FTO)
With excellent electric conductivity and translucency, UV absorption coefficient height and abundant raw materials are being applied to back contacts photovoltaic module
When as conducting wire core material, component cost can be greatly reduced, and play the technical advantage of back contacts large scale battery.
The present invention further provides a kind of preparation method of back contacts large scale battery component transparent flexible conduction core plate, packets
It includes and prepares conductive core plate with nanocrystalline colloidal sol, prepare the presoma of conductive core plate film first, the presoma of the film is indium
Tin-oxide colloidal sol or Fluorin doped stannic oxide colloidal sol, then colloidal sol is applied in transparent flexible polymeric substrates, at overheat
Reason, which obtains, adheres to good transparent conductive film, carries out laser ablation to the transparent conductive film, blows after etching by nitrogen
Mask plate is swept and removed, flexible and transparent conductive route core plate is made.When wherein, using indium tin oxide colloidal sol, solvent is isopropyl
Pure and mild ethyl alcohol, when using Fluorin doped stannic oxide colloidal sol, solvent is ethyl alcohol.
Coating method can be method of spin coating, be also possible to lift rubbing method.When film coated mode is rotary coating
When, include the following steps,
1) a piece of polymer film base is chosen to clean coated face using ethyl alcohol, be placed on spin coater
Carry out colloidal sol coating, successively using low or first gear and top gear coating carry out colloidal sol sprawl and uniformity, adjust coating duration control
The thickness of made membrane coating；
2) it to film obtained by step 1) in 50 DEG C of drying, 6 minutes removal solvents, is toasted 20 minutes at 120 DEG C later；
3) predetermined pattern etching conductive route on conductive film is pressed on the basis of step 2), is blown later by nitrogen
It sweeps, transparent flexible conducting wire core plate is made.
Low or first gear is 300-1000 revs/min in the above method, and top gear is 2500-8000 revs/min, high, low speed shelves
Coating duration is 5s-60s.
When film coated mode is lifting coating, include the following steps,
1) polymer film base is chosen, coated face is cleaned using ethyl alcohol, and paste simultaneously permanent mask plate in uncoated face,
Mask plate can be thin polymer film, be also possible to glass or metal material, it should be noted that mask plate cannot cause dirt to colloidal sol
Dye；
2) polymer film base is immersed into coating sol on the basis of step 1), controls time of immersion and pull rate
To control film coated thickness；
3) film obtained by step 2) toasts 20 minutes at 120 DEG C later in 50 DEG C of drying, 6 minutes removal solvents；
4) predetermined pattern etching conductive route on conductive film is pressed on the basis of step 3), simultaneously by nitrogen purging later
Mask plate is removed, transparent flexible conducting wire core plate is made.
In the above method, time of immersion is 3-15min, and immersing speed is 50-150mm/s, and pull rate is 10-60mm/
s.It is synchronous in multiple film substrates to carry out when coating.
For the film substrate of two kinds of coating methods with a thickness of 20-65 μm, prepared transparent conductive oxide film is thick
Degree is 300-800nm.
The present invention is directed to prepare transparent flexible conduction core plate using the large-sized technology path of low power consuming, to meet back contacts
The use demand of large scale solar cell module.Its advantages: using inorganic, metal oxide film as conducting wire
Core material is used for back contacts large scale battery component relative to copper foil and copper aluminium foil, and raw material are richer, and group can be greatly reduced
Part cost.The flexibility and transparence that conducting wire core plate can be achieved, can be used for general components, flexible unit and double-side assembly,
It breaches metallic conduction route core plate to limit the application of back contact battery, have wide range of applications.Electrically conducting transparent used in the present invention
Oxide material stability with higher and UV absorption coefficient can ask to avoid what metal conductive wire road core plate was oxidized
Topic reduces the maintenance and warehouse cost of raw material and product in storage and use process, and improves the reliable of component
Property.The production of transparent conductive oxide used in the present invention to the of reduced contamination of environment, solve copper and copper aluminium smelting and
Electrorefining bring high pollution problem, and the production energy consumption of transparent flexible conduction core plate is low, size is bigger, can satisfy bigger
The use demand of photovoltaic module.
Detailed description of the invention
Fig. 1 is compliant conductive route core plate schematic cross-section.
Fig. 2 is rotary coating schematic diagram.
Fig. 3 is conducting wire core plate schematic diagram.
Fig. 4 is lifting coating schematic diagram.
Specific embodiment
Compliant conductive route core plate section in following embodiment is as shown in Figure 1, the core plate includes being attached to transparent flexible
Transparent conductive oxide film 1 on polymer film base 2, flexible polymer film substrate 2 are poly terephthalic acid second two
Alcohol ester PET or polyethylene naphthalate PEN, transparent conductive oxide film 1 are indium tin oxide ITO and Fluorin doped dioxy
Change tin FTO.
Embodiment 1
When the present embodiment is realized by rotary coating, first polymer film base 2 is cleaned up, is placed on rotation later
On coating machine pallet, film substrate is slid when pallet is vacuumized to prevent rotary coating.Then by certain volume
It drips in film substrate 2 with the colloidal sol of solid content (see Fig. 2), 3 dosage of colloidal sol can be 90-160ml/m2, 3 solid content of colloidal sol can
To be 0.5%-3.5%.Rotary coating is carried out using the parameter of setting, coating is divided into 300-1000 revs/min of low or first gear and height
2500-5500 revs/min of fast shelves, high low or first gear coating duration may each be 5s-60s, and low or first gear is sprawled for colloidal sol, high speed
Shelves, by controlling the coating duration when gear, can control the thickness of film coated for controlling the uniformity of film coated
Within the scope of 300-800nm.After rotary coating, successively film is dried 6 minutes and toasted 20 minutes at 50 DEG C and 120 DEG C.It
Laser ablation is carried out to conductive film by certain pattern (see Fig. 3) afterwards, obtained flexible and transparent is purged by nitrogen after etching and leads
Electric line core plate.
Embodiment 2
When the present embodiment is realized by lifting coating, first polymer film base is cleaned up, is overleaf pasted and solid
Determine mask plate.Then several polymer film bases 2 are immersed in coating sol 3 (see Fig. 4) simultaneously.It should not be mutual between substrate
Contact avoids influencing film coated quality.Control time of immersion and pull rate control the thickness of smearing, and time of immersion can be with
It is 3-15min, immersing speed can be 50-150mm/s, and pull rate can be 10-60mm/s.After lifting film coated,
Successively film is dried 6 minutes and toasted 20 minutes at 50 DEG C and 120 DEG C.Later by certain pattern (see Fig. 3) to conductive thin
Film carries out laser ablation, and mask plate is purged and removed by nitrogen after etching, and flexible and transparent conductive route core plate is made.It please supplement
Yl moiety parameter.
Embodiment 3
When preparing transparent flexible conductive film using spin coating Fluorin doped stannic oxide colloidal sol, colloidal dispersion exists the present embodiment
In alcohol solvent, the solid content of colloidal sol can be 0.5%-3%, it is contemplated that colloidal solid can settle, before rotary coating,
Colloidal sol needs carry out ultrasonic disperse in ice water, while improving sol particle dispersibility, avoid ultrasound overheat so that solvent
Colloidal sol solid content is caused to change for a large amount of volatilizations and thus bring conductive film performance is uneven.Ultrasound temperature control 10 DEG C with
Under, ultrasonic time controls within 20min.
Embodiment 4
The present embodiment prepares transparent flexible conducting wire core plate by laser ablation, by the laser vertical irradiation of some strength
In metallic conduction oxide surface, metal oxide is gasified to achieve the purpose that etching using the high-energy of laser.Swashing
After photoengraving, the transparent conductive oxide of gasification can have a possibility that redepositing on film surface, and therefore, laser ablation needs
It to be carried out in air or nitrogen stream.After laser ablation, need to purge transparent flexible conducting wire core plate again, with
Guarantee conducting wire core plate surface quality, avoids that short circuit occurs when for component between positive and negative electrode circuit.
In addition to above-mentioned implementation, the present invention can also have other embodiments.It is all to be formed using equivalent substitution or equivalent transformation
Technical solution, fall within the scope of protection required by the present invention.
Claims (10)
1. a kind of back contacts large scale battery component transparent flexible conduction core plate, including be attached in flexible polymer film substrate
Transparent conductive oxide, the flexible polymer film substrate is polyethylene terephtalate or poly- naphthalenedicarboxylic acid
Glycol ester PEN, the transparent conductive oxide are indium tin oxide ITO and Fluorin doped stannic oxide FTO.
2. a kind of preparation method of back contacts large scale battery component transparent flexible conduction core plate, including prepared with nanocrystalline colloidal sol
Conductive core plate, prepares the presoma of conductive core plate film first, and the presoma of the film is that indium tin oxide colloidal sol or fluorine are mixed
Miscellaneous stannic oxide colloidal sol, then colloidal sol is applied in transparent flexible polymeric substrates, it is good to obtain attachment through Overheating Treatment
Bright conductive film carries out laser ablation to the transparent conductive film, mask plate is purged and removed by nitrogen after etching, is made
Flexible and transparent conductive route core plate.
3. the preparation method of back contacts large scale battery component transparent flexible conduction core plate according to claim 2, feature
Be: when using indium tin oxide colloidal sol, solvent is isopropanol and ethyl alcohol, and when using Fluorin doped stannic oxide colloidal sol, solvent is
Ethyl alcohol.
4. the preparation method of back contacts large scale battery component transparent flexible conduction core plate according to claim 2, feature
Be: coating method can be method of spin coating, be also possible to lift rubbing method.
5. the preparation method of back contacts large scale battery component transparent flexible conduction core plate according to claim 4, feature
It is: when film coated mode is rotary coating, includes the following steps,
1) a piece of polymer film base is chosen to clean coated face using ethyl alcohol, be placed on spin coater and carry out
Colloidal sol coating, successively using low or first gear and top gear coating carry out colloidal sol sprawl and uniformity, adjust coating duration control it is thin
The thickness of film coating；
2) it to film obtained by step 1) in 50 DEG C of drying, 6 minutes removal solvents, is toasted 20 minutes at 120 DEG C later；
3) predetermined pattern etching conductive route on conductive film is pressed on the basis of step 2), is purged later by nitrogen, system
Obtain transparent flexible conducting wire core plate.
6. the preparation method of back contacts large scale battery component transparent flexible conduction core plate according to claim 5, feature
Be: low or first gear is 300-1000 revs/min, and top gear is 2500-8000 revs/min, and high, low speed shelves coating duration is
5s-60s。
7. the preparation method of back contacts large scale battery component transparent flexible conduction core plate according to claim 2, feature
It is: when film coated mode is coated with for lifting, includes the following steps,
1) polymer film base is chosen, coated face is cleaned using ethyl alcohol, and paste simultaneously permanent mask plate, mask in uncoated face
Plate is thin polymer film or glass or metal material；
2) polymer film base is immersed into coating sol on the basis of step 1), controls time of immersion and pull rate to control
Made membrane coating thickness,
3) film obtained by step 2) toasts 20 minutes at 120 DEG C later in 50 DEG C of drying, 6 minutes removal solvents；
4) predetermined pattern etching conductive route on conductive film is pressed on the basis of step 3), is purged and is removed by nitrogen later
Transparent flexible conducting wire core plate is made in mask plate.
8. the preparation method of back contacts large scale battery component transparent flexible conduction core plate according to claim 7, feature
Be: time of immersion is 3-15min, and immersing speed is 50-150mm/s, and pull rate is 10-60mm/s.
9. the preparation method of back contacts large scale battery component transparent flexible conduction core plate according to claim 7, feature
It is: synchronous in multiple film substrates to carry out when coating.
10. according to the preparation method of the back contacts large scale battery component transparent flexible conduction core plate of claim 5 or 7,
Be characterized in that: the film substrate is with a thickness of 20-65 μm, and prepared transparent conductive oxide film is with a thickness of 300-800nm.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111223620A (en) * | 2020-01-10 | 2020-06-02 | 广东风华高新科技股份有限公司 | Sheet type precision film exclusion and manufacturing method thereof |
| CN111446482A (en) * | 2020-05-14 | 2020-07-24 | 湖北亿纬动力有限公司 | Assembling method of battery cell module and battery cell module |
| CN115148852A (en) * | 2022-06-30 | 2022-10-04 | 英利能源发展有限公司 | Preparation method of double-sided topcon battery |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102132423A (en) * | 2008-08-27 | 2011-07-20 | 应用材料股份有限公司 | Back contact solar cell modules |
| CN203325938U (en) * | 2013-06-05 | 2013-12-04 | 连云港神舟新能源有限公司 | Flexible conductive back plate suitable for encapsulation of staggered back contact IBC solar cells |
| CN104465837A (en) * | 2014-11-25 | 2015-03-25 | 英利集团有限公司 | Photovoltaic back plate, manufacturing method of photovoltaic back plate and photovoltaic module |
| CN106129185A (en) * | 2016-08-24 | 2016-11-16 | 常州天合光能有限公司 | Laser ablation electrically conducting transparent film preparation phasmon strengthens crystal silicon solar battery method |
-
2019
- 2019-08-15 CN CN201910753801.8A patent/CN110473939A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102132423A (en) * | 2008-08-27 | 2011-07-20 | 应用材料股份有限公司 | Back contact solar cell modules |
| CN203325938U (en) * | 2013-06-05 | 2013-12-04 | 连云港神舟新能源有限公司 | Flexible conductive back plate suitable for encapsulation of staggered back contact IBC solar cells |
| CN104465837A (en) * | 2014-11-25 | 2015-03-25 | 英利集团有限公司 | Photovoltaic back plate, manufacturing method of photovoltaic back plate and photovoltaic module |
| CN106129185A (en) * | 2016-08-24 | 2016-11-16 | 常州天合光能有限公司 | Laser ablation electrically conducting transparent film preparation phasmon strengthens crystal silicon solar battery method |
Non-Patent Citations (2)
| Title |
|---|
| 李建生 等: "大面积 FTO 透明导电薄膜制备技术研究进展", 《无机盐工业》 * |
| 李芝华 等: "溶胶-凝胶法制备ITO透明导电薄膜的研究进展", 《材料导报》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111223620A (en) * | 2020-01-10 | 2020-06-02 | 广东风华高新科技股份有限公司 | Sheet type precision film exclusion and manufacturing method thereof |
| CN111223620B (en) * | 2020-01-10 | 2022-04-22 | 广东风华高新科技股份有限公司 | Sheet type precision film exclusion and manufacturing method thereof |
| CN111446482A (en) * | 2020-05-14 | 2020-07-24 | 湖北亿纬动力有限公司 | Assembling method of battery cell module and battery cell module |
| CN115148852A (en) * | 2022-06-30 | 2022-10-04 | 英利能源发展有限公司 | Preparation method of double-sided topcon battery |
| CN115148852B (en) * | 2022-06-30 | 2024-01-26 | 英利能源发展有限公司 | Preparation method of double-sided topcon battery |
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Application publication date: 20191119 |