CN105789367A - Asymmetrical electrode two-dimensional material/graphene heterojunction cascaded photodetector and manufacturing method thereof - Google Patents
Asymmetrical electrode two-dimensional material/graphene heterojunction cascaded photodetector and manufacturing method thereof Download PDFInfo
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- 238000005516 engineering process Methods 0.000 claims description 5
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 5
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses an asymmetrical electrode two-dimensional material/graphene heterojunction cascaded photodetector and a manufacturing method thereof. The detector comprises a Si/SiO2 substrate, a first electrode is arranged on the Si/SiO2 substrate, a two-dimensional material layer is arranged on the first electrode, a second electrode is arranged on the two-dimensional material layer, and the two-dimensional material layer is an n-layer heterojunction formed by graphene and two-dimensional material which are overlapped. The asymmetrical electrodes with different work functions are adopted, formation of a Fermi energy level difference from the first electrode to the second electrode is promoted, photocarriers are generated and then quickly diffused to an external circuit, quick combination of an electron hole can be avoided due to existence of the energy level difference, and the photo response of the device can be enhanced; and as the graphene and the two-dimensional material are combined, the high carrier mobility and the super quick response time of the graphene, and the high absorption rate towards light by the two-dimensional material are used respectively, and a super quick and super high-response photodetector can be realized.
Description
Technical field
The present invention relates to field of photoelectric technology, be specifically related to a kind of asymmetric electrode two-dimensional material/Graphene hetero-junctions cascade electrooptic detector and preparation method thereof.
Background technology
Photodetector is that light is irradiated to device surface and produces a kind of device of the signal of telecommunication, all has a wide range of applications in fields such as electronics industry, military affairs, bio-sensings.Along with the raising day by day of scientific and technical development and living standard, the requirement of detector quality is gradually stepped up, and the important parameter weighing photodetector quality is light absorption wave band, optical responsivity and photoresponse time.Traditional photodetector based on Group III-V semiconductor is affected by restriction due to its characteristic of semiconductor in Absorber Bandwidth and response time etc..It addition, improving constantly along with device integration, traditional semiconductor device has approached its dimension limit.Device size also becomes the restraining factors of conventional photodetectors development.Therefore, the realistic meaning that a kind of photodetector with high quantum production rate, fast response time, high-responsivity and wavelength selectivity is critically important to following opto-electronics is studied.
The wide spectral absorption of Graphene, big specific surface area, quick carrier mobility (2.0X105cm2/ (V.S)), the feature such as ultrafast speed of photoresponse, it is hereby achieved that based on the detector super quick, ultrafast, high performance of Graphene so that it is the application at photodetector has huge potentiality.But owing to Graphene is in the absorption very weak (2.3%) of spectral region interior focusing widely so that it is have relatively low optical responsivity, the easy compound of photo-generated carrier simultaneously, also lack wavelength tuning control.This weak point seriously constrains the optical responsivity of graphene-based photodetection, this also means that single graphene device development has run into bottleneck.Along with the discovery that graphite is rare, a lot of New Two Dimensional functional materials are similarly subjected to the concern of people, especially cross plating sulfide.Light is had higher absorption by this kind of two-dimensional material, and has high quantum efficiency, according to 100,000 times that calculating display molybdenum bisuphide photodetector optical responsivity is Graphene.But this detector has the shortcomings such as carrier mobility is only small, efficiency of light absorption is low because of it, significantly limit its application in photodetection etc..As can be seen here, single two-dimensional material detector still cannot meet the demand that people improve day by day.
Summary of the invention
For solving the problems referred to above, the invention provides a kind of asymmetric electrode two-dimensional material/Graphene hetero-junctions cascade electrooptic detector and preparation method thereof.
For achieving the above object, the technical scheme that the present invention takes is:
Asymmetric electrode two-dimensional material/Graphene hetero-junctions cascade electrooptic detector, including Si/SiO2Substrate, described Si/SiO2Substrate is provided with the first electrode, and described first electrode is provided with two-dimensional material layer, and described two-dimensional material layer is provided with the second electrode, and described two-dimensional material layer is that Graphene is overlapping with two-dimensional material forms n layer hetero-junctions.
Wherein, described first electrode is the metal electrode that work function is higher, is formed by magnetron sputtering or heat evaporation, and thickness is 10-100um.
Wherein, described first electrode is Pt or Au.
Graphene wherein, in the overlapping n layer hetero-junctions formed of described Graphene and two-dimensional material is by shifting gained after CVD growth, described two-dimensional material is transient metal sulfide, such as MoS2, WS2Deng.
Wherein, described graphite is rare is 3-5 with the value of n in the overlapping n layer hetero-junctions formed of two-dimensional material, increases with the increase technology difficulty of the number of plies.
Wherein, described second electrode is the metal electrode that work function is low, such as Ag etc.；Being formed by magnetron sputtering or heat evaporation, thickness is 5-20nm.
The preparation method of above-mentioned asymmetric electrode two-dimensional material/Graphene hetero-junctions cascade electrooptic detector, comprises the steps:
S1, by CVD growth single-layer graphene and two-dimensional material；
S2, by heat evaporation at Si/SiO2The first electrode that 40nm is thick is prepared on surface；
S3, the Graphene of step S1 gained, two-dimensional material are carried out doping in various degree after, be utilized respectively PMMA and be transferred to the first electrode surface, obtain multilayer hetero-structure；
S4, by photoetching, the multilayer hetero-structure of gained is patterned；
S5, utilization are at multilayer hetero-structure upper surface heat evaporation evaporation the second electrode.
The method have the advantages that
(1) asymmetric electrode that work function is different is adopted, promote by the first electrode being formed to the second electrode fermi level difference, photo-generated carrier can be made to diffuse to rapidly external circuit after producing, simultaneously because the existence of energy level difference it also avoid the rapid compound of electron hole, the photoresponse of device thus can be increased.
(2) adopt Graphene to combine with two-dimensional material, be utilized respectively the high carrier mobility of Graphene, ultrafast response time and the high-absorbility that two-dimensional material is to light, it is possible to achieve ultrafast, the photodetector of superelevation response.
(3) form of n layer hetero-junctions cascade is adopted, it is possible to forming more potential gradient, vital effect is played in the raising for photoelectric current.
(4) because adopting longitudinal stack, it is possible to reducing device size, the light being more suitable for superelevation is electrically integrated.
Accompanying drawing explanation
Fig. 1 is the structural representation that embodiment of the present invention asymmetric electrode two-dimensional material/Graphene hetero-junctions cascade electrooptic visits device；
Fig. 2 is the sectional view of internal layer grapheme two-dimension material cascade hetero-junctions in Fig. 1
In figure: 1-Si/SiO2Substrate；2-the first electrode；3-internal layer grapheme two-dimension material cascade hetero-junctions；4-the second electrode；31-Graphene；32-two-dimensional material；33-Graphene；34-two-dimensional material；35-Graphene.
Detailed description of the invention
In order to make objects and advantages of the present invention clearly understand, below in conjunction with embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein is only in order to explain the present invention, is not intended to limit the present invention.
As shown in Figure 1-2, a kind of asymmetric electrode two-dimensional material/Graphene hetero-junctions cascade electrooptic detector is embodiments provided, including Si/SiO2Substrate 1, described Si/SiO2Substrate 1 is provided with the first electrode 2, and described first electrode 2 is provided with two-dimensional material layer 3, and described two-dimensional material layer 3 is provided with the second electrode 4, and described two-dimensional material layer 3 is that Graphene is overlapping with two-dimensional material forms n layer hetero-junctions.
Described first electrode 2 is the metal electrode that work function is higher, is formed by magnetron sputtering or heat evaporation, and thickness is 10-100um.Described Graphene and the Graphene in the overlapping n layer hetero-junctions formed of two-dimensional material are by shifting gained after CVD growth, described two-dimensional material is transient metal sulfide, such as MoS2, WS2Deng.Described graphite is rare is 3-5 with the value of n in the overlapping n layer hetero-junctions formed of two-dimensional material, increases with the increase technology difficulty of the number of plies.Described second electrode is the metal electrode that work function is low, is formed by magnetron sputtering or heat evaporation, and thickness is 5-20nm.
Embodiment 1
S11, by CVD growth single-layer graphene and MoS2Etc. two-dimensional material.
S12, by heat evaporation at Si/SiO2The Au electrode (the first electrode) that 40nm is thick is prepared on surface.
S13, the Graphene of gained, two-dimensional material are carried out doping in various degree after, utilize PMMA to shift Graphene, two-dimensional material respectively to metal electrode (the first electrode surface), obtain two-dimensional material/Graphene/two-dimensional material double heterojunction；
S14, by photoetching, the two-dimensional material/Graphene/two-dimensional material double heterojunction of gained is patterned；
S15, utilization heat evaporation are deposited with 20nmAg as the second electrode on two-dimensional material/Graphene/two-dimensional material double heterojunction, obtain two-dimensional material/Graphene/two-dimensional material double heterojunction photodetector.
Embodiment 2
S21, by CVD growth single-layer graphene and MoS2Etc. two-dimensional material.
S22, by heat evaporation at Si/SiO2The Au electrode (the first electrode) that 40nm is thick is prepared on surface.
S23, the Graphene of gained, two-dimensional material are carried out doping in various degree after, utilize PMMA to shift Graphene, two-dimensional material respectively to metal electrode (the first electrode surface), obtain Graphene/two-dimensional material/Graphene/two-dimensional material/Graphene four hetero-junctions；
S24, by photoetching, Graphene/two-dimensional material/Graphene/two-dimensional material/Graphene four hetero-junctions of gained is patterned；
S25, utilization heat evaporation are deposited with 20nmAg as the second electrode on two-dimensional material/Graphene/two-dimensional material double heterojunction, obtain the photodetector of Graphene/two-dimensional material/Graphene/four hetero-junctions cascades of two-dimensional material/Graphene.
Embodiment 3
S31, by CVD growth single-layer graphene and MoS2Etc. two-dimensional material.
S32, by heat evaporation at Si/SiO2The Au electrode (the first electrode) that 40nm is thick is prepared on surface.
S33, the Graphene of gained, two-dimensional material are carried out doping in various degree after, utilize PMMA to shift Graphene, two-dimensional material respectively to metal electrode (the first electrode surface), obtain Graphene/two-dimensional material 1 (MoS2)/Graphene/two-dimensional material 2 (WS2The multiple two-dimensional material such as)/Graphene form hetero-junctions with the rare combination of graphite；
S34, by photoetching Graphene/two-dimensional material 1 (MoS to gained2)/Graphene/two-dimensional material 2 (WS2The multiple two-dimensional material such as)/Graphene form hetero-junctions with the rare combination of graphite and are patterned；
S35, utilization heat evaporation are deposited with 20nmAg as the second electrode on two-dimensional material/Graphene/two-dimensional material double heterojunction, obtain Graphene/two-dimensional material 1 (MoS2)/Graphene/two-dimensional material 2 (WS2The multiple two-dimensional material such as)/Graphene form the photodetector of hetero-junctions cascade with the rare combination of graphite.
The above is only the preferred embodiment of the present invention; it should be pointed out that, for those skilled in the art, under the premise without departing from the principles of the invention; can also making some improvements and modifications, these improvements and modifications also should be regarded as protection scope of the present invention.
Claims (7)
1. asymmetric electrode two-dimensional material/Graphene hetero-junctions cascade electrooptic detector, it is characterised in that include Si/SiO2Substrate (1), described Si/SiO2Substrate (1) is provided with the first electrode (2), described first electrode (2) is provided with two-dimensional material layer (3), described two-dimensional material layer (3) is provided with the second electrode (4), and described two-dimensional material layer (3) forms n layer hetero-junctions for Graphene and two-dimensional material are overlapping.
2. asymmetric electrode two-dimensional material according to claim 1/Graphene hetero-junctions cascade electrooptic detector, it is characterized in that, described first electrode (2) is the higher metal electrode of work function, is formed by magnetron sputtering or heat evaporation, and thickness is 10-100um.
3. asymmetric electrode two-dimensional material according to claim 2/Graphene hetero-junctions cascade electrooptic detector, it is characterised in that described first electrode (2) is Pt or Au.
4. asymmetric electrode two-dimensional material according to claim 1/Graphene hetero-junctions cascade electrooptic detector, it is characterized in that, described Graphene and the Graphene in the overlapping n layer hetero-junctions formed of two-dimensional material are by shifting gained after CVD growth, described two-dimensional material is transient metal sulfide, such as MoS2, WS2Deng.
5. asymmetric electrode two-dimensional material according to claim 1/Graphene hetero-junctions cascade electrooptic detector, it is characterised in that described graphite is rare is 3-5 with the value of n in the overlapping n layer hetero-junctions formed of two-dimensional material, increases with the increase technology difficulty of the number of plies.
6. asymmetric electrode two-dimensional material according to claim 1/Graphene hetero-junctions cascade electrooptic detector, it is characterised in that described second electrode is the metal electrode that work function is low, such as Ag etc.；Being formed by magnetron sputtering or heat evaporation, thickness is 5-20nm.
7. the preparation method of asymmetric electrode two-dimensional material/Graphene hetero-junctions cascade electrooptic detector, it is characterised in that comprise the steps:
S1, by CVD growth single-layer graphene and two-dimensional material；
S2, by heat evaporation at Si/SiO2The first electrode that 40nm is thick is prepared on surface；
S3, the Graphene of step S1 gained, two-dimensional material are carried out doping in various degree after, be utilized respectively PMMA and be transferred to the first electrode surface, obtain multilayer hetero-structure；
S4, by photoetching, the multilayer hetero-structure of gained is patterned；
S5, utilization are at multilayer hetero-structure upper surface heat evaporation evaporation the second electrode.
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU170833U1 (en) * | 2016-12-07 | 2017-05-11 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский университет "Московский институт электронной техники" | OPTICAL VISIBLE RADIATION DETECTOR |
| CN107316915A (en) * | 2017-07-04 | 2017-11-03 | 中山大学 | Photodetector of integrated graphene molybdenum disulfide of visible light wave range and preparation method thereof |
| CN107749433A (en) * | 2017-08-30 | 2018-03-02 | 中国科学院上海技术物理研究所 | A kind of two-dimentional Van der Waals heterojunction photoelectric detector and preparation method thereof |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103219403A (en) * | 2013-04-19 | 2013-07-24 | 苏州大学 | Optical detector based on two-dimensional stratiform atomic crystal materials |
| CN103579419A (en) * | 2013-11-13 | 2014-02-12 | 苏州科技学院 | Grapheme/MoS2/Si heterojunction thin-film solar cell and manufacturing method thereof |
| CN103904544A (en) * | 2013-11-15 | 2014-07-02 | 南通蓝诺光电科技有限公司 | Two-dimensional stratified material saturable absorber device and manufacturing method thereof |
| US20140251204A1 (en) * | 2013-03-11 | 2014-09-11 | William Marsh Rice University | Novel growth methods for controlled large-area fabrication of high-quality graphene analogs |
| CN104218114A (en) * | 2014-08-28 | 2014-12-17 | 太原理工大学 | Two-dimensional heterojunction solar cell and manufacturing method thereof |
-
2016
- 2016-04-15 CN CN201610255603.5A patent/CN105789367A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140251204A1 (en) * | 2013-03-11 | 2014-09-11 | William Marsh Rice University | Novel growth methods for controlled large-area fabrication of high-quality graphene analogs |
| CN103219403A (en) * | 2013-04-19 | 2013-07-24 | 苏州大学 | Optical detector based on two-dimensional stratiform atomic crystal materials |
| CN103579419A (en) * | 2013-11-13 | 2014-02-12 | 苏州科技学院 | Grapheme/MoS2/Si heterojunction thin-film solar cell and manufacturing method thereof |
| CN103904544A (en) * | 2013-11-15 | 2014-07-02 | 南通蓝诺光电科技有限公司 | Two-dimensional stratified material saturable absorber device and manufacturing method thereof |
| CN104218114A (en) * | 2014-08-28 | 2014-12-17 | 太原理工大学 | Two-dimensional heterojunction solar cell and manufacturing method thereof |
Cited By (21)
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| CN107316915A (en) * | 2017-07-04 | 2017-11-03 | 中山大学 | Photodetector of integrated graphene molybdenum disulfide of visible light wave range and preparation method thereof |
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