CN109904253A - The silicon substrate photo-thermal electrical effect photoelectric converter and preparation method thereof of phasmon enhancing - Google Patents
The silicon substrate photo-thermal electrical effect photoelectric converter and preparation method thereof of phasmon enhancing Download PDFInfo
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- CN109904253A CN109904253A CN201910123092.5A CN201910123092A CN109904253A CN 109904253 A CN109904253 A CN 109904253A CN 201910123092 A CN201910123092 A CN 201910123092A CN 109904253 A CN109904253 A CN 109904253A
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Abstract
The present invention relates to photoelectric conversion techniques, and in particular to the silicon substrate photo-thermal electrical effect photoelectric converter and preparation method thereof of phasmon enhancing, including silicon nanostructure, plasmon resonance metal Nano structure, electrode and substrate；The size of at least one dimension of silicon nanostructure is 1 ~ 300 nanometer, the parameter of plasmon resonance metal Nano structure resonant wavelength, polarization according to needed for it, chiral characteristic determine that plasmon resonance metal Nano structure forms composite construction in conjunction with silicon nanostructure；Electrode is contacted with silicon nanostructure, and silicon nanostructure is set to substrate.The converter can efficiently use Traditional photovoltaic and change the mechanism the energy of unserviceable thermalization carrier, improve photoelectric conversion efficiency, pass through and integrate phasmon enhancing structure in silicon-based nano structure and improve light absorption in silicon nanostructure.Corresponding various dimensions can also be brought to respond ability of regulation and control for silicon based opto-electronics converter using sensibility of the surface plasmon resonance to polarization, wavelength and chirality.
Description
Technical field
The invention belongs to the silicon substrates of photodetector, photovoltaic energy conversion technical field more particularly to phasmon enhancing
Photo-thermal electrical effect photoelectric converter and preparation method thereof.
Background technique
Photodetector is the important component of photoelectric information device.The detectivity of photodetector, operating wave
Long range, speed of detection, processing cost, device size and multi-functional detection (such as polarization, wavelength and chiral detection) are that photoelectricity is visited
Survey the most important several performance indicators of device.Si-based photodetectors are currently used widest visible-light detectors, the reason is that
The CMOS technology of element silicon earth rich reserves and silicon is mature.But the indirect bandgap behavior of silicon (~1.12eV) limits silicon
The extinction efficiency of base photodetector.And smaller and smaller silicon photodetector also requires to improve light suction in limited silicon materials
Receipts amount.The absorption efficiency of silicon nanostructure is optimized, the detection performance of currently widely used silicon photodetector is improved,
It is of great significance to the photodetector for realizing highly sensitive, inexpensive, high integration visible light and near infrared band.
In terms of light-use, solar energy is a kind of green, inexhaustible clean energy resource.The mankind are in benefit
Many approach are attempted with solar energy aspect.Silica-based solar cell is due at low cost, rich reserves, and incident photon-to-electron conversion efficiency is fine to be obtained
To extensive use.Other such as multijunction solar cells, organic solar batteries and perovskite solar battery etc. are also by wide
General concern.Such photocell is all to utilize photo-excited electron hole pair in semiconductor, then electrons and holes are diffused into yin respectively
Pole and anode form electric current output.Such photoelectric conversion mechanism, mainly by: the band gap of 1 material is limited, only energy be greater than band
The photon of gap can just be absorbed and used, and reduce the utilization efficiency of sunlight spectrum；The limitation of 2 material carrier mobilities carries
When stream migrates in a semiconductor material, meeting off-energy or generation electron-hole due to collision etc. is compound, thus can not
Reach electrode, has lost substantial portion of energy conversion efficiency；The efficiency of light absorption of 3 materials itself is limited, in order to carry photoproduction
Stream efficiently separates, and material needs to be made relatively thin in longitudinal direction, this can reduce the absorptivity of material.Above 3 points lead to silicon
There are the Quessnet-Schockley limit in unijunction for the energy conversion efficiency of based solar battery, not more than
30%.The efficiency of light absorption for how improving silica-base material breaks the band gap limitation of material, breaks through material carrier mobility to light
The constraint of electrotransformation, this is that the core that current solar energy energy Transformation Application faces is difficult.The separation and utilization of photo-generated carrier
Whether there are also other approach, this is the problem of solar energy energy Transformation Application is worth thinking.
On the one hand, photo-thermal electrical effect is presented in the nanostructure of silicon, provides think of to improve the utilization efficiency of photo-generated carrier
Road, such as 2008 on Science magazine two papers report in silicon nanostructure since nanometer size effect limits sound
Son scattering leads to the huge raising of Seebeck coefficient figure of merit ZT.Correlative theses inspire us to study and confirmed in silicon-based nano structure
Present in due to photoproduction hot carrier temperature gradient drive photoelectric responeThat is photo-thermal electrical effect.Photo-thermal
Electrical effect can efficiently use the energy that Traditional photovoltaic detects unserviceable thermalization carrier, further improve photoelectric conversion
Efficiency.What the place that photo-thermal electrical effect is different from pyroelectric effect was that it utilizes is carrier temperature gradient and pyroelectric effect utilizes
Be lattice temperature gradient.Photo-thermal electrical effect is response speed faster compared to the advantage of pyroelectric effect, and can be carried using heat
Flow the energy production photoelectric respone of son.On the other hand, phasmon structure is integrated in silicon-based nano structure is also a kind of thinking.
Surface plasmon resonance is collective oscillation behavior of the free electron under incoming electromagnetic field excitation in metal Nano structure.Metal
Plasmon resonance structure can improve in graphene and nanometer semiconductor structure effectively by incident light local in sub-wavelength dimensions
Light absorption.On the other hand, metal phasmon can be generated apparent photo-thermal effect and photoproduction hot carrier by illumination, related
Effect is expected also can photo-thermal electrical effect in gain silicon nanostructure.In addition, the surface plasmon resonance of metal Nano structure
Corresponding various dimensions ability of regulation and control can also be brought for silicon based opto-electronics converter to the sensibility of polarization, wavelength and chirality.
Summary of the invention
An object of the present invention is to provide the silicon photoelectric conversion of a kind of high integration, high sensitivity and various dimensions response
Device.
The second object of the present invention is to provide a kind of system of the silicon substrate photo-thermal electrical effect photoelectric converter of phasmon enhancing
Make method.
To achieve the above object, the technical solution adopted by the present invention is that: a kind of silicon substrate photo-thermal electricity effect of phasmon enhancing
Answer photoelectric converter, including silicon nanostructure, plasmon resonance metal Nano structure, electrode and substrate；Silicon nanostructure is extremely
The size of a rare dimension is 1 nanometer~300 nanometers, and the parameter of plasmon resonance metal Nano structure is total according to needed for it
Vibration wave is long, polarize, chiral characteristic determines that plasmon resonance metal Nano structure forms composite junction in conjunction with silicon nanostructure
Structure；Electrode is contacted with silicon nanostructure, and silicon nanostructure is set to substrate.
In the silicon substrate photo-thermal electrical effect photoelectric converter that above-mentioned phasmon enhances, silicon nanostructure is doped to n
Type doping, plasmon resonance metal Nano structure are directly covered on silicon nanostructure；The p-type that is doped to of silicon nanostructure is mixed
It is miscellaneous, the insulating layer of one layer of sub-10 nano is added between plasmon resonance metal Nano structure and silicon nanostructure.
In the silicon substrate photo-thermal electrical effect photoelectric converter that above-mentioned phasmon enhances, silicon nanostructure is doped to p
Type doping, electrode are contacted using ohm-type electrode；Silicon nanostructure is doped to n-type doping, and electrode uses Schottky type or Europe
The contact of nurse type electrode.
In the silicon substrate photo-thermal electrical effect photoelectric converter that above-mentioned phasmon enhances, substrate is exhausted using low thermally conductive and electricity
The material of edge selects silica, silicon nitride material, or uses hanging structure.
A kind of production method of the silicon substrate photo-thermal electrical effect photoelectric converter of phasmon enhancing, comprising the following steps:
The preparation of step 1, substrate: substrate is the film that one layer of 1 nanometer~300 nano thickness is arranged at top, and bottom is that electricity is exhausted
Edge, low thermally conductive backing material；
Step 2 utilizes electron beam exposure, nano impression or uv-exposure technology and reactive ion beam etching (RIBE) or corrosion
Technology prepares the silicon nanostructure array being mutually isolated on substrate；
Step 3 utilizes exposure technique and metal deposit side at the both ends of each structural unit of silicon nanostructure array
Method forms metal electrode；
Step 4, using alignment exposure technique, at the top of silicon nanostructure or side realize plasmon resonance metal nano
Structure it is graphical, and plasmon resonance metal Nano structure is prepared by physical vapour deposition (PVD), electroplating technology.
Beneficial effects of the present invention: by enhancing silicon using the photo-thermal electrical effect in silicon nanostructure and based on phasmon
Light absorption in nanostructure is improved and is imitated to utilizing for unserviceable hot carrier energy in Traditional photovoltaic transformation mechanism
Rate, and take full advantage of the sensibility such as wavelength brought by plasmon resonance structure, polarization, chirality and realize that various dimensions response is adjusted
Control realizes photo-thermal electrical effect with the combination of traditional photoelectric conversion mechanism (photovoltaic effect, photoconductive effect etc.), open circuit
Voltage responsive improves a magnitude than traditional silicon-based photoelectric device.For realizing high density of integration, high sensitivity and low cost
Silicon photodetector and high efficiency light, which utilize, to be of great significance.
Detailed description of the invention
Fig. 1 is the silicon substrate photo-thermal electrical effect photoelectric converter structural schematic diagram that the phasmon of the embodiment of the present invention enhances；
Fig. 2 is the photoelectric characteristic measuring device figure of the embodiment of the present invention；
Fig. 3 is the shorted devices photoelectric current of the embodiment of the present invention with polarization independent relational graph.
Specific embodiment
Embodiments of the present invention are described in detail with reference to the accompanying drawing.
The present embodiment is achieved through the following technical solutions, a kind of silicon substrate photo-thermal electrical effect photoelectricity turn of phasmon enhancing
Parallel operation, including silicon nanostructure are used for shape for enhancing the plasmon resonance metal Nano structure of silicon nanostructure light absorption
At the metal electrode that ohm-type or Schottky type electrode contact, and the substrate for insulating, being insulated；Silicon nanostructure at least certain
Size is at 1 nanometer~300 nanometers on dimension, and plasmon resonance metal Nano structure is by required resonant wavelength, polarization, hand
Property etc. characteristics determine dependency structure parameter, plasmon resonance metal Nano structure with silicon nanostructure formed composite construction, lead to
The excitation of plasmon resonance is crossed, to enhance the light absorption in silicon nanostructure.
Also, silicon nanostructure is the photo-thermal electric material for realizing photoelectric conversion, and the temperature of carrier is generated by incident light
Distribution gradient produces detectable orientation photoelectric current or photovoltage.Silicon nanostructure size at least certain dimension is received 1
Rice~300 nanometers, such as one-dimensional nano line, nanobelt, two-dimensional nano-film or Nanostructure Network, three-dimensional manometer cone etc..Silicon
Having a size of 1 nanometer~300 nanometers on nanostructure at least certain dimension, to reduce electricity using the size confinement effect of phonon
Son-phonon interaction obtains photoexcitation carrier temperature with the decoupling of lattice temperature, realizes obvious photo-thermal electrical effect,
To drive dissufion current using the temperature gradient distribution of photoproduction hot carrier, realization proposes photo-generated carrier utilization efficiency
It is high.Silicon nanostructure is to pass through semiconductor based on SOI (Silicon on Insulator) substrate common in semi-conductor industry
What micro-nano processing method was prepared into can be used for the silicon nanostructure of large-scale integrated.
Also, plasmon resonance metal Nano structure determines correlation by characteristics such as required resonant wavelength, polarization, chiralitys
Structural parameters；The effect of phasmon structure is to effectively increase silicon nanostructure using its near field electromagnetic field energy local effect
In light absorption；The designs such as period, shape, material by regulation plasmon resonance metal Nano structure have certain wave
The photoelectric detector of long, polarization and chiral response；Related manufacturing processes can pass through electron-beam direct writing, optical exposure, nanometer pressure
The methods of print translates into metal Nano structure by the methods of plated film/etching again after preparing nano-pattern, can also pass through chemistry
The methods of synthesis, self assembly, metal film annealing, plating preparation.
Also, the doping concentration and doping polarity of silicon nanostructure determine silicon nanostructure and plasmon resonance metal
The combination of nanostructure: if silicon is n-type doping, plasmon resonance metal Nano structure can directly overlay silicon and receive
In rice structure；If silicon is p-type doping, need to add one layer of Asia between plasmon resonance metal Nano structure and silicon nanostructure
10 nanometers of insulating layer, with barrier metal to the electron adulterated effect of silicon.
Also, metal electrode need to realize that ohm or Schottky type are contacted with silicon nanostructure, dense according to the doping of silicon materials
Degree includes but is not limited to: chromium, gold, nickel, silver.Contact polarity can be by selecting the metal material of suitable fermi level, and adjusts
The doping concentration of silicon is controlled to adjust fermi level position in silicon, passes through the regulation of the opposite fermi level position of Metal And Silicon, Lai Shixian
Ohm or the contact of Schottky type electrode.The contact of Metal And Silicon electrode is that ohm-type contacts, and choosing for ohm-type contact is also mixed with silicon
Miscellaneous polarity is related；If silicon is p-type doping, due to photovoltaic effect and photo-thermal electrical effect polarity on the contrary, needing with ohm-type electrode
Contact the interference to avoid photovoltaic effect as far as possible；If silicon is n-type doping, photovoltaic effect is identical with photo-thermal electrical effect polarity, this
When can be contacted using Schottky type electrode and be superimposed photovoltaic effect and photo-thermal electrical effect, to obtain stronger photoelectric respone.
Also, incident light can be coupled by space optical coupling or waveguide, space optical coupling can be used object lens coupling or
The form of optical fibre illumination.Waveguide coupling can be using modes such as on piece Waveguide near-field couplings.
Also, the substrate of silicon nanostructure is low thermally conductive and electrical isolation material.For reducing substrate heat conduction and
The effects such as electric leakage.It can choose silica, silicon nitride or hanging structure etc..
Also, plasmon resonance metal Nano structure has the sensitive resonance characteristics such as wavelength, polarization, chirality, Ke Yiwei
Photoelectric conversion increases the regulation responding ability such as corresponding wavelength, polarization, chirality.
Also, based on the silicon materials photo-thermal electrical effect of surface phasmon enhancing, photovoltaic energy conversion is carried out, can be used for too
Sun such as can utilize at the correlation energies conversion art.
The present embodiment also provides a kind of preparation method of the silicon substrate photo-thermal electrical effect photoelectric converter of phasmon enhancing, packet
Include following steps:
(1) substrate preparation: substrate is the silicon thin film that top has one layer of 1 nanometer~300 nano thickness, and bottom is that electricity is exhausted
Edge, low thermally conductive backing material.Common SOI (Silicon on Insulator) is constituted.
(2) it is carved using exposure techniques and reactive ion beam etching (RIBE) etc. such as electron beam exposure, nano impression or uv-exposures
Erosion or corrosion technology prepare the silicon nanostructure array being mutually isolated on soi substrates.
(3) exposure technique and metal deposition shape are utilized at the both ends of each structural unit of silicon nanostructure array
At metal electrode.
(4) using alignment exposure technique, phasmon structure is realized on specific region (at the top of silicon nanostructure or side)
It is graphical, and prepare plasmon resonance metal Nano structure by technologies such as physical vapour deposition (PVD), plating.
When it is implemented, the light absorption in silicon nanostructure is enhanced using phasmon metal Nano structure, to increase
The strong photoelectric conversion efficiency of the photo-thermal electrical effect based on silicon, plasmon resonance be also silicon based opto-electronics conversion increase wavelength,
Polarization, chirality etc. regulate and control responding ability.
The silicon substrate photo-thermal electrical effect photoelectric converter of the phasmon enhancing of embodiment, as shown in Figure 1, including silicon nanometer thin
Film and gold nano grating/insulation film structure and gold/chromium/silicon ohm-type electricity in the covering of silicon nano thin-film end surface
Pole contact, test device is as shown in Fig. 2, include light source, photoelectric converter, and the source table of detection electric signal.
Silicon nanostructure is by using electron-beam direct writing and subsequent reactions ion beam on silicon (SOI) wafer on insulator
20 microns long, 3 microns wide, thick 200 nanometers of the silicon nano thin-film band of lithographic technique preparation.If silicon nano thin-film is p-type doping,
Then need to increase between silicon nano thin-film and upper layer gold nano grating insulating layer (such as hafnium oxide, oxygen of one layer of sub-10 nano thickness
Change aluminium etc.).If silicon nano thin-film is n-type doping, gold nano optical grating construction can be prepared directly on silicon thin film.
Plasmon resonance metal Nano structure be make using focused-ion-beam lithography (350 receive with some cycles
Rice) and sub-wavelength slit width (about 35 nanometers) gold nano optical grating construction.Gold nano optical grating construction with a thickness of 100 nanometers.
Gold/chromium/silicon ohm-type electrode contact in embodiment is prepared by the following method: being covered using electron-beam direct writing
The silicon nanoribbons both ends of photoresist expose etching window (rectangular area: 6 microns × 3 microns) out, and anti-with isotropism
It answers ion beam etching to perform etching silicon nanoribbons line both ends, forms inclined-plane.Then evaporation 5 nanometers of Cr and 100 receive in order
Rice Au, then carries out solution-off, forms gold/chromium/silicon ohm-type electrode contact.For p-type doping silicon, since Schottky type electrode connects
Photovoltaic effect in touching shares the same light pyroelectric effect polarity on the contrary, so can only contact using ohm-type electrode；For n-type doping silicon,
Since the photovoltaic effect of Schottky type electrode pyroelectric effect polarity of sharing the same light is consistent, thus can be using Schottky type or ohm-type electricity
Pole contact.Ohm or the contact of Schottky type electrode may be implemented in regulation by Metal And Silicon with respect to fermi level position.
Optical couping device in embodiment are as follows: be equipped with Olympus microscope, by mono-colour laser or surpass company with object lens
Continuous spectrum laser light source focuses the phasmon enhancing structure region for being incident on device.It is left-right asymmetry due to this device, it can also
External light source (such as halogen lamp), which is directlyed adopt, without object lens focusing carries out Both wide field illumination.
It is distributed below by testing photoelectronic fluid space to verify the photo-thermal electrical effect of silicon nanostructure.Pass through mobile example
Position realizes focal beam spot along the scanning of sample surfaces and monitors short circuit current or open-circuit voltage, with the photoelectricity of source table measurement device
The photoresponses such as stream or photovoltage.All photoelectric respone measurements do not apply applying bias (i.e. measurement short-circuit photocurrent or open circuit light
Voltage).The physical image of photo-thermal electrical effect is as follows in silicon: incident light beamlet is absorbed by silicon thin film and excites electronics in irradiation area
With hole pair, the carrier density gradient and temperature gradient in irradiated/non-irradiated region are formed, there is concentration gradient and temperature gradient
Carrier Profile can drive carrier diffusion formed dissufion current.Due to electrode be ohm-type contact, Metal And Silicon interface it is interior
Building transference cell caused by electric field can ignore.By taking p-type silicon as an example, hole is majority carrier, in carrier thermal diffusion process
In occupy an leading position, when (right side) side left in illuminated with laser light Fig. 2, the voltage in left side should be lower than the voltage on the right side of (being higher than), thus
Light source meter is caused to detect negative (just) photovoltage or positive (negative) photoelectric current.
Phasmon enhancing light absorption effect verifying in embodiment is as follows: the polarization direction of incident laser is perpendicular to grating
Direction is radiated at plasmon resonance metal Nano structure.It is sub- using the angular resolution spectral measurement metal based on Fourier transform
The reflection dispersion of wavelength slit nanometer grating is composed, and confirms its resonance peak.By the polarization for changing incident laser at resonance peak
Direction measures photoelectric respone with the cosine square of polarization angle in dependence, it was demonstrated that the photo-thermal telecommunications of phasmon enhancing
Number, as shown in figure 3, showing since plasmon resonance structure introduces caused polarization response.Because only that incident laser is inclined
Plasmon resonance can be excited when shaking direction perpendicular to grating orientation, to enhance the light absorption in silicon nanostructure.Increase
Strong mechanism of absorption can also be simulated by time-domain finite difference and calculate field distribution and to assess.It is calculated by field distribution aobvious
Show, under the conditions of same light is shone, the silicon thin film with phasmon enhancing light absorption structure is not than with the naked of phasmon structure
The absorptivity of silicon thin film improves about 10 times.
Be described as follows in embodiment about the polar selection of silicon doping: plasmon resonance metal Nano structure directly contacts
P-type doping silicon will lead to electron injection, and p-type silicon is become N-shaped intrinsic silicon, to change the response polarity of photo-thermal electrical effect and drop
The gain effect of low phasmon.Significant phasmon enhancing silicon based opto-electronics response in order to obtain, can be used n-type doping silicon and receives
Rice film+directly cover plasmon resonance metal Nano structure, or use p-type doping silicon nano thin-film combination sub-10 nano
Insulating layer and plasmon resonance metal Nano structure two schemes, are selected according to the SOI wafer doping type possessed.
It should be understood that the part that this specification does not elaborate belongs to the prior art.
Although being described in conjunction with the accompanying a specific embodiment of the invention above, those of ordinary skill in the art should
Understand, these are merely examples, various deformation or modification can be made to these embodiments, without departing from original of the invention
Reason and essence.The scope of the present invention is only limited by the claims that follow.
Claims (5)
1. a kind of silicon substrate photo-thermal electrical effect photoelectric converter of phasmon enhancing, including silicon nanostructure, plasmon resonance
Metal Nano structure, electrode and substrate；It is characterized in that the size of at least one dimension of silicon nanostructure is 1 nanometer~300 to receive
Rice, the parameter of plasmon resonance metal Nano structure resonant wavelength, polarization according to needed for it, chiral characteristic determine, wait from sharp
Member resonance metal Nano structure forms composite construction in conjunction with silicon nanostructure；Electrode is contacted with silicon nanostructure, silicon nano junction
Structure is set to substrate.
2. the silicon substrate photo-thermal electrical effect photoelectric converter of phasmon enhancing as described in claim 1, characterized in that silicon nanometer
Structure is doped to n-type doping, and plasmon resonance metal Nano structure is directly covered on silicon nanostructure；Silicon nanostructure
Be doped to p-type doping, between plasmon resonance metal Nano structure and silicon nanostructure plus one layer of sub-10 nano insulation
Layer.
3. the silicon substrate photo-thermal electrical effect photoelectric converter of phasmon enhancing as described in claim 1, characterized in that silicon nanometer
Structure is doped to p-type doping, and electrode is contacted using ohm-type electrode；Silicon nanostructure is doped to n-type doping, and electrode uses
Schottky type or the contact of ohm-type electrode.
4. the silicon substrate photo-thermal electrical effect photoelectric converter of phasmon enhancing as described in claim 1, characterized in that substrate is adopted
With low thermally conductive and electrical isolation material, silica, silicon nitride material are selected, or use hanging structure.
5. the production side for the silicon substrate photo-thermal electrical effect photoelectric converter that the phasmon as described in claim any one of 1-4 enhances
Method, characterized in that the following steps are included:
Step 1, substrate prepare: substrate is the silicon thin film that one layer of 1 nanometer~300 nano thickness is arranged at top, and bottom is to be electrically insulated, is low
Thermally conductive backing material；
Step 2 utilizes electron beam exposure, nano impression or uv-exposure technology and reactive ion beam etching (RIBE) or corrosion technology
The silicon nanostructure array being mutually isolated is prepared on substrate；
Step 3 utilizes exposure technique and metal deposition shape at the both ends of each structural unit of silicon nanostructure array
At metal electrode；
Step 4, using alignment exposure technique, at the top of silicon nanostructure or side realize plasmon resonance metal Nano structure
It is graphical, and plasmon resonance metal Nano structure is prepared by physical vapour deposition (PVD), electroplating technology.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110556478A (en) * | 2019-08-30 | 2019-12-10 | 桂林医学院 | Perovskite weak light detector based on plasmon effect |
| CN110854213A (en) * | 2019-11-28 | 2020-02-28 | 电子科技大学中山学院 | Photoelectric converter for enhancing silicon-based photoelectric effect by utilizing hot carriers |
| CN113594312A (en) * | 2021-06-11 | 2021-11-02 | 厦门士兰明镓化合物半导体有限公司 | Deep ultraviolet LED chip and manufacturing method thereof |
| CN114734138A (en) * | 2022-04-24 | 2022-07-12 | 中国科学院重庆绿色智能技术研究院 | Method for enhancing laser energy absorption efficiency of spatial additive manufacturing wire |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102301498A (en) * | 2009-01-30 | 2011-12-28 | 惠普开发有限公司 | Plasmonic Light Emitting Diode |
-
2019
- 2019-02-18 CN CN201910123092.5A patent/CN109904253A/en not_active Withdrawn
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102301498A (en) * | 2009-01-30 | 2011-12-28 | 惠普开发有限公司 | Plasmonic Light Emitting Diode |
Non-Patent Citations (2)
| Title |
|---|
| WEIKANG LIU等: "A plasmon modulated photothermoelectric photodetector in silicon nanostripes", 《NANOSCALE》 * |
| 郝会颖等: "基于金属颗粒表面等离激元的陷光研究", 《第二届新型太阳能电池学术研讨会》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110556478A (en) * | 2019-08-30 | 2019-12-10 | 桂林医学院 | Perovskite weak light detector based on plasmon effect |
| CN110854213A (en) * | 2019-11-28 | 2020-02-28 | 电子科技大学中山学院 | Photoelectric converter for enhancing silicon-based photoelectric effect by utilizing hot carriers |
| CN110854213B (en) * | 2019-11-28 | 2021-06-25 | 电子科技大学中山学院 | Photoelectric converter for enhancing silicon-based photoelectric effect by utilizing hot carriers |
| CN113594312A (en) * | 2021-06-11 | 2021-11-02 | 厦门士兰明镓化合物半导体有限公司 | Deep ultraviolet LED chip and manufacturing method thereof |
| CN113594312B (en) * | 2021-06-11 | 2023-10-24 | 厦门士兰明镓化合物半导体有限公司 | Deep ultraviolet LED chip and manufacturing method thereof |
| CN114734138A (en) * | 2022-04-24 | 2022-07-12 | 中国科学院重庆绿色智能技术研究院 | Method for enhancing laser energy absorption efficiency of spatial additive manufacturing wire |
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