CN110450510A - A kind of preparation method of silumin electronic package materials - Google Patents
A kind of preparation method of silumin electronic package materials Download PDFInfo
- Publication number
- CN110450510A CN110450510A CN201910835438.4A CN201910835438A CN110450510A CN 110450510 A CN110450510 A CN 110450510A CN 201910835438 A CN201910835438 A CN 201910835438A CN 110450510 A CN110450510 A CN 110450510A
- Authority
- CN
- China
- Prior art keywords
- silumin
- plate
- electronic package
- silicone content
- package materials
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D11/00—Continuous casting of metals, i.e. casting in indefinite lengths
- B22D11/001—Continuous casting of metals, i.e. casting in indefinite lengths of specific alloys
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D11/00—Continuous casting of metals, i.e. casting in indefinite lengths
- B22D11/06—Continuous casting of metals, i.e. casting in indefinite lengths into moulds with travelling walls, e.g. with rolls, plates, belts, caterpillars
- B22D11/0611—Continuous casting of metals, i.e. casting in indefinite lengths into moulds with travelling walls, e.g. with rolls, plates, belts, caterpillars formed by a single casting wheel, e.g. for casting amorphous metal strips or wires
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/06—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the heating method
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
Abstract
The invention discloses a kind of preparation methods of silumin electronic package materials, it is characterised in that: the silumin plate of silicone content needed for being obtained first by conventional casting methods；Then silumin plate is refined by rapid solidification method, obtains thin ribbon shaped silumin；Finally according to required thickness, hot-forming, that is, the silumin electronic package materials of silicone content needed for obtaining will be carried out after the superposition of several thin ribbon shaped silumins.The present invention is comprehensive to use rapid solidification method and a variety of advanced preparation processes of pressure sintering, under the premise of keeping relatively high silicone content, it has obtained aluminum substrate and tiny silicon phase two-phase is equally distributed near the silumin Electronic Packaging material densified completely, had many advantages, such as that easy to operate, device simple, porosity are low, have excellent performance, is environmentally protective, technology maturation.
Description
Technical field
The present invention relates to a kind of preparation methods of silumin electronic package materials.
Background technique
Common electronic package material is divided into plastic encapsulant, ceramic packaging material and Materials for Metal Packaging three classes.It is high
Silico-aluminum has that low density, good heat conductivity, thermal expansion coefficient be low, machining property as electronic package material of new generation
It can be good the advantages that, is constantly valued by people in Electronic Packaging field.Silumin is in electronic package material field
With and continue to develop, make up the segmental defect of conditional electronic encapsulating material, with the continuous improvement of technology of preparing, high sial is closed
Gold is used as novel light electronic package material, there is very open development space and application prospect.
The method of silumin is prepared mainly include the following types: (1) pressure impregnation method: needing elevated pressures thus to institute
The mold sealing requirements used are higher, and compression system is complex, can not be widely applied.(2) powder metallurgic method: due to work
Skill complexity, higher cost, powder is easily oxidized, consistency is inadequate, it is difficult to reach the requirement of Electronic Packaging air-tightness.(3) it sprays
Sedimentation: excessively high to equipment requirement, costly, and manufacturing cycle is longer for cost.(4) melting and casting method: being to prepare alloy material
Expect widest method, has the characteristics that device simple, at low cost and can be applied to large-scale industrial production, and it is operated
Simply, process simplicity, gained alloy have preferable casting character.
Getting rid of band processing is to convert generated heat using electromagnetic induction and electric heating by induction melting come smelting metal
A kind of quick setting method gets rid of, the Ultra-fine Grained material that can prepare segregation-free or be less segregated very big with cooling rate in experimentation
Material.Hot pressed sintering is the method by applying external pressure during the sintering process to promote densifying materials, compares and burns with without pressure
For knot, material can low tens even several hundred degrees Celsius at a temperature of reach densifie state, and hot pressed sintering grain growth
It is less, it is easier to obtain fine-grained material.
If or the high performance silumin of fine grain can be prepared by casting with getting rid of band method and pressure sintering combines
Electronic package material.
Summary of the invention
The present invention is intended to provide a kind of new method for preparing silumin electronic package materials.
The present invention is to realize goal of the invention, is adopted the following technical scheme that
The preparation method of silumin electronic package materials of the present invention, it is characterized in that: pass through conventional cast side first
The silumin plate of silicone content needed for method obtains；Then silumin plate is refined by rapid solidification method,
Obtain thin ribbon shaped silumin；Finally according to required thickness, will be hot pressed into after the superposition of several thin ribbon shaped silumins
Type, that is, the silumin electronic package materials of silicone content needed for obtaining.Specifically comprise the following steps:
(1) prepared by plate
Using conventional casting methods, the silumin plate of required silicone content is prepared；To gained silumin plate
The upper surface of material carries out including sand paper polishing, alcohol washes, acetone decontamination and the surface treatment for drying each process；It will surface treatment
Silumin plate is placed on spare in alcohol afterwards；
(2) rapid solidification method refines
Silumin plate is placed on and is got rid of in the cavity with machine, it is molten higher than the silumin plate to get rid of band temperature
30~50 DEG C of point, copper Kun rotation speed are 600rpm~1600rpm, and thin ribbon shaped silumin is obtained after throwing away；
(3) hot-forming
According to required thickness, several thin ribbon shaped silumin through-thickness are successively superimposed, then use graphite paper bag
It is put into graphite jig after wrapping up in；Mold is put into again it is hot-forming in vacuum brazing furnace, hot pressing temperature be 200 DEG C~600 DEG C, pressure
Power is 200MPa~500MPa, soaking time is 1h~4.5h, that is, the silumin Electronic Packaging material of silicone content needed for obtaining
Material.
Wherein, the silicon mass percentage of the silumin is in 50%-90% range.
Compared with prior art, the beneficial effects of the present invention are embodied in:
1, the present invention is comprehensive uses two kinds of advanced preparation processes of rapid solidification method and pressure sintering, is keeping higher silicone content
Under the premise of, it has obtained aluminum substrate and tiny silicon phase two-phase is equally distributed near the silumin densified completely electricity
Sub- encapsulating material has many advantages, such as that easy to operate, device simple, porosity are low, has excellent performance, is environmentally protective, technology maturation.
2, silumin in process, is prepared by quickly solidification, the tiny high sial of particle can be obtained and closed
Golden material, has excellent performance；The silumin electronic package materials as obtained by hot pressed sintering, layer tissue structure is uniformly tiny, causes
Density is high, and porosity reduces, improves electric conductivity.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below with reference to embodiment to this hair
Bright specific embodiment is described in detail.The following contents is only to design example of the invention and explanation, institute
Belong to those skilled in the art to make various modifications or additions to the described embodiments or using similar
Mode substitutes, and as long as it does not deviate from the concept of invention or beyond the scope defined by this claim, should belong to the present invention
Protection scope.
Embodiment 1
The present embodiment the following steps are included:
(1) prepared by plate
Using melting and casting method, preparing silicon mass percentage is 50%, with a thickness of the high-silicon aluminium-silicon alloy plate of 10mm
Material, method particularly includes: by the silico briquette of 150g, the melting in vacuum smelting furnace is complete with 150g aluminium block, be then cast into a thickness of
The raw material of 10mm.
10mm × 10mm × 10mm fritter is intercepted on the resulting silumin plate of melting using wire cutting, then
Its upper surface is carried out to include sand paper polishing, alcohol washes, acetone decontamination and the surface treatment for drying each process；It will surface treatment
It is placed on spare in alcohol.
(2) rapid solidification method refines
Silumin plate is placed on and is got rid of in the cavity with machine, setting get rid of with temperature (50% silicone content
Getting rid of for alusil alloy plate should be set as 1050 DEG C with temperature) He Tongkun rotation speed (the alusil alloy plate of 50% silicone content
Rotation speed should be set as 700r/min).It is 50% that silicone content is obtained after throwing away, the high silicon of thin ribbon shaped of wide 4.5mm, thickness 0.03mm
Aluminium closes.
(3) hot-forming
The high sial of 40 thin ribbon shapeds is closed through-thickness to be successively superimposed, is put into graphite jig after then being wrapped up with graphite paper
In, and gap is filled with graphite paper；Mold is put into again hot-forming in vacuum brazing furnace, hot pressing temperature is 600 DEG C, pressure is
The silumin electronic package materials that 500MPa, soaking time 3h, i.e. acquisition silicone content are 50%.
Embodiment 2
The present embodiment the following steps are included:
(1) prepared by plate
Using melting and casting method, preparing silicon mass percentage is 60%, with a thickness of the high-silicon aluminium-silicon alloy plate of 10mm
Material, method particularly includes: by the silico briquette of 180g, the melting in vacuum smelting furnace is complete with 120g aluminium block, be then cast into a thickness of
The raw material of 10mm.
10mm × 10mm × 10mm fritter is intercepted on the resulting silumin plate of melting using wire cutting, and right
Its upper surface carries out including sand paper polishing, alcohol washes, acetone decontamination and the surface treatment for drying each process；After being surface-treated
It is placed in spare in alcohol.
(2) rapid solidification method refines
Silumin plate is placed on and is got rid of in the cavity with machine, setting is got rid of with temperature (the aluminium silicon conjunction of 60% silicone content
Getting rid of for golden plate material should be set as 1150 DEG C with temperature) He Tongkun rotation speed (the rotation speed of the alusil alloy plate of 60% silicone content
Degree should be set as 700r/min), throw away after i.e. obtain silicone content be 60%, the thin ribbon shaped alusil alloy of wide 4.5mm, thickness 0.03mm.
(3) hot-forming
The high sial of 40 thin ribbon shapeds is closed through-thickness to be successively superimposed, is put into graphite jig after then being wrapped up with graphite paper
In, and gap is filled with graphite paper；Mold is put into again hot-forming in vacuum brazing furnace, hot pressing temperature is 600 DEG C, pressure is
The silumin electronic package materials that 500MPa, soaking time 3h, i.e. acquisition silicone content are 60%.
Embodiment 3
The present embodiment the following steps are included:
(1) prepared by plate
Using melting and casting method, preparing silicon mass percentage is 90%, with a thickness of the high-silicon aluminium-silicon alloy plate of 10mm
Material, method particularly includes: by the silico briquette of 270g, the melting in vacuum smelting furnace is complete with 30g aluminium block, be then cast into a thickness of
The raw material of 10mm.
10mm × 10mm × 10mm fritter is intercepted on the resulting silumin plate of melting using wire cutting, and right
Its upper surface carries out including sand paper polishing, alcohol washes, acetone decontamination and the surface treatment for drying each process；After being surface-treated
It is placed in spare in alcohol.
(2) rapid solidification method refines
Silumin plate is placed on and is got rid of in the cavity with machine, setting is got rid of with temperature (the aluminium silicon conjunction of 90% silicone content
Getting rid of for golden plate material should be set as 1350 DEG C with temperature) He Tongkun rotation speed (the rotation speed of the alusil alloy plate of 90% silicone content
Degree should be set as 700r/min), throw away after i.e. obtain silicone content be 90%, the thin ribbon shaped alusil alloy of wide 4.5mm, thickness 0.03mm.
(3) hot-forming
The high sial of 40 thin ribbon shapeds is closed through-thickness to be successively superimposed, is put into graphite jig after then being wrapped up with graphite paper
In, and gap is filled with graphite paper；Mold is put into again hot-forming in vacuum brazing furnace, hot pressing temperature is 600 DEG C, pressure is
The silumin electronic package materials that 500MPa, soaking time 3h, i.e. acquisition silicone content are 90%.
The above is only exemplary embodiment of the present invention, are not intended to limit the invention, all in spirit of the invention
With any modifications, equivalent replacements, and improvements made within principle etc., should all be included in the protection scope of the present invention.
Claims (3)
1. a kind of preparation method of silumin electronic package materials, it is characterised in that: obtained first by conventional casting methods
The silumin plate of silicone content needed for obtaining；Then silumin plate is refined by rapid solidification method, is obtained
Thin ribbon shaped silumin；Finally according to required thickness, will carry out after the superposition of several thin ribbon shaped silumins it is hot-forming, i.e.,
The silumin electronic package materials of silicone content needed for obtaining.
2. a kind of silumin electronic package materials preparation method according to claim 1, which is characterized in that including such as
Lower step:
(1) prepared by plate
Using conventional casting methods, the silumin plate of required silicone content is prepared；To gained silumin plate
Upper surface carries out including sand paper polishing, alcohol washes, acetone decontamination and the surface treatment for drying each process；It is high after being surface-treated
Silico-aluminum plate is placed on spare in alcohol；
(2) rapid solidification method refines
Silumin plate is placed on and is got rid of in the cavity with machine, band temperature is got rid of and is higher than the silumin plate fusing point 30
~50 DEG C, copper Kun rotation speed be 600rpm~1600rpm, after throwing away i.e. acquisition thin ribbon shaped silumin；
(3) hot-forming
According to required thickness, several thin ribbon shaped silumin through-thickness are successively superimposed, after then being wrapped up with graphite paper
It is put into graphite jig；Mold is put into again hot-forming in vacuum brazing furnace, hot pressing temperature is 200 DEG C~600 DEG C, pressure is
200MPa~500MPa, soaking time are 1h~4.5h, that is, the silumin electronic package materials of silicone content needed for obtaining.
3. a kind of silumin electronic package materials preparation method according to claim 1 or 2, it is characterised in that: institute
The silicon mass percentage of silumin is stated in 50%-90% range.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910835438.4A CN110450510A (en) | 2019-09-05 | 2019-09-05 | A kind of preparation method of silumin electronic package materials |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910835438.4A CN110450510A (en) | 2019-09-05 | 2019-09-05 | A kind of preparation method of silumin electronic package materials |
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| CN110450510A true CN110450510A (en) | 2019-11-15 |
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| CN201910835438.4A Pending CN110450510A (en) | 2019-09-05 | 2019-09-05 | A kind of preparation method of silumin electronic package materials |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112846118A (en) * | 2021-01-05 | 2021-05-28 | 北京科技大学 | Method for preparing high-magnetic-performance phosphorus-containing silicon steel thin strip by using strip throwing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102978485A (en) * | 2011-09-07 | 2013-03-20 | 长沙华希金属材料有限公司 | Novel high-silicon aluminum alloy electronic packaging material and preparation method thereof |
| CN102994784A (en) * | 2012-10-25 | 2013-03-27 | 上海大学 | Method for phase structure in refined hypereutectic aluminum-silicon alloy by strong magnetic field composited with alterant |
| CN107096918A (en) * | 2017-04-18 | 2017-08-29 | 西北工业大学 | A kind of method for preparing texturing high tenacity block materials |
| CN108866545A (en) * | 2018-07-25 | 2018-11-23 | 合肥工业大学 | A method of carrying material is got rid of by laser melting coating and prepares gradient aluminium silicon electronic package material |
-
2019
- 2019-09-05 CN CN201910835438.4A patent/CN110450510A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102978485A (en) * | 2011-09-07 | 2013-03-20 | 长沙华希金属材料有限公司 | Novel high-silicon aluminum alloy electronic packaging material and preparation method thereof |
| CN102994784A (en) * | 2012-10-25 | 2013-03-27 | 上海大学 | Method for phase structure in refined hypereutectic aluminum-silicon alloy by strong magnetic field composited with alterant |
| CN107096918A (en) * | 2017-04-18 | 2017-08-29 | 西北工业大学 | A kind of method for preparing texturing high tenacity block materials |
| CN108866545A (en) * | 2018-07-25 | 2018-11-23 | 合肥工业大学 | A method of carrying material is got rid of by laser melting coating and prepares gradient aluminium silicon electronic package material |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112846118A (en) * | 2021-01-05 | 2021-05-28 | 北京科技大学 | Method for preparing high-magnetic-performance phosphorus-containing silicon steel thin strip by using strip throwing method |
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Application publication date: 20191115 |