CN110417373A - 一种频率可调的横向场激励薄膜体声波谐振器及制备方法 - Google Patents
一种频率可调的横向场激励薄膜体声波谐振器及制备方法 Download PDFInfo
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Abstract
本发明公开了一种频率可调的横向场激励薄膜体声波谐振器及制备方法，由上至下依次包括电极铝、压电基片钽酸锂、温度补偿层二氧化硅及衬底硅；所述衬底设有空腔，空腔与贯穿于温度补偿层、压电基片的释放通孔相通，所述压电基片为单晶材料。本发明在不改变压电基片的厚度情况下，谐振器的中心频率随着电极对激励方向的改变而发生变化。
Description
技术领域
本发明涉及微电子技术，具体涉及一种频率可调的横向场激励薄膜体声波谐振器及制备方法。
背景技术
薄膜体声波谐振器因其高Q值、体积小、可集成化等特点而引起了很多研究关注，并且随着移动通信技术的飞速发展，薄膜体声波谐振器不仅在射频前端中得到大量应用，也在传感器检测应用中表现出很大的潜力，比如生物化学检测，力学检测等。
薄膜体声波器件的激励方式主要分为两种，一种是采用厚度场激励模式，两个电极分别在压电基片的两面，电场沿着基片的厚度方向；另一种是采用横向场激励模式，两个电极在压电基片的同一面，这种体声波器件的制作方法和声表面波器件相似。在实际应用中，这两种激励模式都会引起压电基片体内的质点产生厚度剪切振动，它产生的声波在基片内传播，属于体声波。
相较于厚度场激励模式的体声波器件，横向场激励模式的体声波器件具有以下优点：晶体振动活力最强的部分没有电极，使老化效率降低；应用于液体环境中，可获得更高Q值；电极在同一主表面，制作相对容易。
现有主流的体声波器件都是采用多晶压电材料，如AlN、ZnO薄膜，相比单晶材料，多晶材料具有各向同性的特性，所以一般都认为电极在压电基片上的性能与电极方向无关。此外，多晶薄膜结构存在大量的晶界和缺陷，声波在其中传播时会被晶界和缺陷散射系数，造成能量损耗，降低机电耦合效率。
一般体声波滤波器由多个谐振频率的谐振器按照一定结构相连构成。体声波谐振频率主要通过改变压电基片的厚度实现，基片厚度越薄，谐振频率越高，所以一种厚度的压电基片一般只能做一种谐振频率的体声波器件，制作一个体声波滤波器便需要多种不同厚度的压电基片，这极大地增加了滤波器的制作难度。如果可以使压电基片厚度一致，谐振频率不一致，那便仅需要一块压电基片，就可以制作体声波滤波器，这提高了设计效率，降低滤波器生产成本。
发明内容
为了克服现有技术存在的缺点与不足，本发明首要目的是提供一种频率可调的横向场激励薄膜体声波谐振器，是基于Y-42切钽酸锂单晶材料，提出在不改变电极尺寸、压电薄膜厚度的情况下，通过改变电极对与压电基片的相对方向，即电场激励角度，实现了一种中心频率可调的体声波谐振器。
本发明的次要目的是提供一种频率可调的横向场激励薄膜体声波谐振器的制备方法。
本发明采用如下技术方案：
一种频率可调的横向场激励薄膜体声波谐振器，由上至下依次包括电极铝、压电基片、温度补偿层及衬底；
所述衬底设有空腔，空腔与贯穿于温度补偿层、压电基片的释放通孔相通。
所述压电基片为单晶材料。
所述单晶材料具体为42度Y切向单晶钽酸锂。
所述电极铝由两条平行电极构成。
所述温度补偿层厚度为1.5μm，衬底厚度为300μm，压电基片的厚度为670nm。
所述电极的厚度为100nm。
一种横向场激励薄膜体声波谐振器的制备方法，包括如下步骤：
S1，在位于晶片最上层的压电材料上面光刻释放通孔，定义通孔形状；
S2，采用感应耦合等离子体干法刻蚀压电基片及温度补偿层，同时保护不需要刻蚀的区域，刻蚀完成后，形成贯穿压电基片及温度补偿层的通孔，在刻蚀窗口内露出衬底；
S3，在压电基片上表面光刻、蒸镀电极铝；
S4，使用气体XeF2通过释放通孔进行衬底刻蚀，形成空腔结构，完成制备。
本发明的有益效果：
(1)本发明基于COMSOL仿真，得出谐振频率随电极对方向的变化规律，根据单晶压电衬底材料调整电极对方向，在不改变电极尺寸、压电薄膜厚度的情况下获得谐振频率可调的谐振器；
(2)本发明频率可调薄膜体谐振器可以在，同一压电基片上实现片上体声波滤波器，有利于减少器件体积和制作成本；
(3)现有制备工艺多通过磁控溅射得到多晶压电薄膜材料，由于多晶材料中存在晶界和缺陷，会造成对体声波的吸收或散射，增加声波传输损耗。本发明压电层采用钽酸锂单晶材料，有利于提升器件的耦合系数，品质因数和滤波性能；
(4)本发明的薄膜体声波谐振器，电极在同一个主表面，结构相对简单，制作更容易，同时由于晶体振动活力最强的部分没有电极，降低器件的老化率。
附图说明
图1是本发明的Comsol仿真模型立体结构图；
图2是本发明的剖面图；
图3是本发明的制备方法流程图；
图4(a)是本发明电极旋转角度为0度示意图；
图4(b)是图4(a)在中心谐振频率2.06GHz的等效阻抗Y11的仿真结果图；
图4(c)是本发明电极旋转角度为45度示意图；
图4(d)是图4(c)在中心谐振频率2.22GHz的等效阻抗Y11的仿真结果图；
图4(e)是本发明电极旋转角度为-45度示意图；
图4(f)是图4(e)在中心谐振频率2.21GHz的等效阻抗Y11仿真结果图；
图4(g)是本发明电极旋转角度为90度示意图；
图4(h)是图4(g)在中心谐振频率2.10GHz的等效阻抗Y11仿真结果图。
具体实施方式
下面结合实施例及附图，对本发明作进一步地详细说明，但本发明的实施方式不限于此。
实施例
图1为本发明中仿真的横向场激励薄膜体声波谐振器的立体结构图，包括从上往下依次放置的电极铝1、压电基片2、温度补偿层3，本实施例中压电基片选用Y-42切单晶钽酸锂材料，温度补偿层选用二氧化硅。
图2所示横向场激励薄膜体声波谐振器的剖面图，温度补偿层设置在衬底上，所述衬底5设有空腔4，空腔关于衬底纵向中线对称，由上边沿向下延伸。温度补偿层介于压电基板与衬底之间，电极铝位于压电基板同一表面，释放通孔6与空腔相通，通孔贯穿压电基片、温度补偿层及空腔，空腔的尺寸形状及通孔尺寸形状根据实际情况确定。
本发明谐振器在工作时，电信号加载到电极铝上，钽酸锂单晶压电薄膜激励的电场方向，平行于晶体基板的主表面方向，即横向场激励模式。如果改变电极对与压电基片的相对方向，由于单晶材料各向异性，晶体离子发生不同的振动，宏观上表现为谐振器谐振频率发生变化；
本发明针对单晶材料温度系数大，器件频率会存在温漂的问题，在薄膜结构中添加了一层具有正温度系数的二氧化硅作为温度补偿层，减少复合膜层的温度系数，增强器件的温度稳定性。
本发明的铝电极由两条平行的电极构成，通过改变电极激励角度，谐振器的中心频率随着电极对激励方向的改变而变化。
本实施例中将铝电极对的激励角度设置为0°、+45°、-45°、90°，其仿真结果对应于图4(a)-图4(h)，谐振器的中心频率随着电极对激励方向的改变而发生变化，因此，在同一个压电基片上，在不改变晶片厚度的情况下，可设计多个不同谐振频率的谐振器，通过合适的耦合拓扑结构相连，这为实现片上滤波器提供了可能性。
请参阅图3，图3是本发明薄膜体声波谐振器结构的制造方法流程图。本发明薄膜体声波谐振器制造方法包括步骤：
S1、在位于晶片最上层的压电材料上面光刻释放通孔，定义通孔形状；
S2、采用感应耦合等离子体干法刻蚀压电基片及温度补偿层，同时保护不需要刻蚀的区域，刻蚀完成后，形成贯穿压电基片及温度补偿层的通孔，在刻蚀窗口内露出衬底；
S3、在压电基片上表面光刻、蒸镀电极铝；
S4、使用气体XeF2通过释放通孔进行衬底刻蚀，形成空腔结构，完成制备。
所述横向激励薄膜体声波器件参数设置，所述上表面激励的电极厚度为100nm,所述Y-42切钽酸锂薄膜层的厚度为670nm，所述温度补偿层二氧化硅的厚度为1.5μm，所述衬底硅为300μm。
上述实施例为本发明较佳的实施方式，但本发明的实施方式并不受所述实施例的限制，其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化，均应为等效的置换方式，都包含在本发明的保护范围之内。
Claims (8)
1.一种频率可调的横向场激励薄膜体声波谐振器，其特征在于，由上至下依次包括电极铝、压电基片、温度补偿层及衬底；
所述衬底设有空腔，空腔与贯穿于温度补偿层、压电基片的释放通孔相通。
2.根据权利要求1所述的横向场激励薄膜体声波谐振器，其特征在于，所述压电基片为单晶材料。
3.根据权利要求2所述的横向场激励薄膜体声波谐振器，其特征在于，所述单晶材料具体为42度Y切向单晶钽酸锂。
4.根据权利要求1所述的横向场激励薄膜体声波谐振器，其特征在于，所述电极铝由两条平行电极构成。
5.根据权利要求1所述的横向场激励薄膜体声波谐振器，其特征在于，所述温度补偿层厚度为1.5μm，衬底厚度为300μm。
6.根据权利要求4所述的横向场激励薄膜体声波谐振器，其特征在于，所述电极的厚度为100nm。
7.根据权利要求1所述的横向场激励薄膜体声波谐振器，其特征在于，所述压电基片的厚度为670nm。
8.一种如权利要求1-7任一项所述的横向场激励薄膜体声波谐振器的制备方法，其特征在于，包括如下步骤：
S1、在位于晶片最上层的压电基片上面光刻释放通孔，定义通孔形状；
S2、采用感应耦合等离子体干法刻蚀压电基片及温度补偿层，同时保护不需要刻蚀的区域，刻蚀完成后，形成贯穿压电基片及温度补偿层的通孔，在刻蚀窗口内露出衬底；
S3、在压电基片上表面光刻、蒸镀电极铝；
S4、使用气体XeF2通过释放通孔进行衬底刻蚀，形成空腔结构，完成制备。
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