JP2021503229A - 圧電共振器および圧電共振器の製造方法 - Google Patents
圧電共振器および圧電共振器の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 116
- 238000000034 method Methods 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims description 46
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 149
- 229910004298 SiO 2 Inorganic materials 0.000 description 14
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 8
- 230000007423 decrease Effects 0.000 description 6
- 238000010897 surface acoustic wave method Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- 229920000106 Liquid crystal polymer Polymers 0.000 description 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000000708 deep reactive-ion etching Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000005236 sound signal Effects 0.000 description 2
- 229910016570 AlCu Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical group [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
- H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0407—Temperature coefficient
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- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
上面に凹溝が形成された基板と、
前記凹溝との間に空洞が形成されるように、前記基板の上面および前記凹溝の開口を覆う第1圧電層と、
前記第1圧電層の前記基板から離れた側に設けられた第1電極および温度補償層と、を備え、
前記基板に垂直な方向において、前記第1電極の前記基板における投影が前記凹溝の所在エリアに位置する、圧電共振器を提供する。
基板の上面に凹溝を形成することと、
前記凹溝に犠牲材料を充填し、前記犠牲材料の上面が前記基板の上面と面一になるようにすることと、
前記基板の上面および前記犠牲材料の上面を第1圧電層で覆うことと、
前記第1圧電層の前記基板から離れた側に第1電極および温度補償層を形成することと、
前記犠牲材料を除去して空洞を形成することとを含み、
前記基板に垂直な方向において、前記第1電極の前記基板における投影が前記凹溝の所在エリアに位置する、圧電共振器の製造方法を更に提供する。
Claims (13)
- 上面に凹溝が形成された基板と、
前記凹溝との間に空洞が形成されるように、前記基板の上面および前記凹溝の開口を覆う第1圧電層と、
前記第1圧電層の前記基板から離れた側に設けられた第1電極および温度補償層と、を備え、
前記基板に垂直な方向において、前記第1電極の前記基板における投影が前記凹溝の所在エリアに位置する、圧電共振器。 - 前記第1電極は前記第1圧電層の前記基板から離れた側の表面に位置し、前記温度補償層は前記第1電極を覆う、請求項1に記載の圧電共振器。
- 前記温度補償層は前記第1圧電層の前記基板から離れた側の表面に位置し、前記第1電極は前記温度補償層の前記基板から離れた側に位置する、請求項1に記載の圧電共振器。
- 前記第1電極は前記温度補償層の前記基板から離れた側の表面に位置する、請求項3に記載の圧電共振器。
- 前記温度補償層と前記第1電極との間に位置する第2圧電層を更に備え、前記第1電極は、前記第2圧電層の前記基板から離れた側の表面に位置する、請求項3に記載の圧電共振器。
- 前記空洞に位置し、且つ、前記第1圧電層の前記基板に接近する側の表面に設けられた第2電極を更に備える、請求項1から5のいずれか1項に記載の圧電共振器。
- 前記第1電極がインターデジタル電極または面状電極であることと、前記第2電極がインターデジタル電極または面状電極であることとのうちの少なくとも1つを含む、請求項6に記載の圧電共振器。
- 前記基板の材料はシリコンである、請求項1に記載の圧電共振器。
- 前記温度補償層の材料は正温度係数材料である、請求項1に記載の圧電共振器。
- 前記温度補償層の材料は二酸化ケイ素である、請求項9に記載の圧電共振器。
- 前記第1電極の厚さは100nm〜200nmである、請求項1に記載の圧電共振器。
- 基板の上面に凹溝を形成することと、
前記凹溝に犠牲材料を充填し、前記犠牲材料の上面が前記基板の上面と面一になるようにすることと、
前記基板の上面および前記犠牲材料の上面を第1圧電層で覆うことと、
前記第1圧電層の前記基板から離れた側に第1電極および温度補償層を形成することと、
前記犠牲材料を除去して空洞を形成することと、を含み、
前記基板に垂直な方向において、前記第1電極の前記基板における投影が前記凹溝の所在エリアに位置する、圧電共振器の製造方法。 - 前記犠牲材料を除去して空洞を形成することとは、
前記基板に垂直な方向において、前記凹溝の所在エリアにおいて孔を開け、開けられた孔によって前記犠牲材料をエッチングすることを含む、請求項12に記載の圧電共振器の製造方法。
Applications Claiming Priority (5)
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CN201721512611.XU CN207339804U (zh) | 2017-11-14 | 2017-11-14 | 一种压电谐振器 |
CN201721512611.X | 2017-11-14 | ||
CN201711121168.8A CN107733395A (zh) | 2017-11-14 | 2017-11-14 | 一种压电谐振器和压电谐振器的制备方法 |
CN201711121168.8 | 2017-11-14 | ||
PCT/CN2018/085289 WO2019095640A1 (zh) | 2017-11-14 | 2018-05-02 | 压电谐振器和压电谐振器的制备方法 |
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GB201802659D0 (en) * | 2018-02-19 | 2018-04-04 | Cambridge Entpr Ltd | Resonator and method for operation of resonator |
JP7168009B2 (ja) * | 2019-01-31 | 2022-11-09 | 株式会社村田製作所 | 弾性波デバイスおよびマルチプレクサ |
EP4027514A4 (en) * | 2019-09-05 | 2023-10-25 | Changzhou Chemsemi Co., Ltd. | DEVICE FOR ACOUSTIC VOLUME WAVE RESONANCE AND ACOUSTIC VOLUME WAVE FILTER |
CN112653417A (zh) * | 2020-12-18 | 2021-04-13 | 广东广纳芯科技有限公司 | 声表面波谐振器及该声表面波谐振器的制造方法 |
CN113437947B (zh) * | 2021-07-06 | 2023-03-28 | 电子科技大学 | 一种基于声子晶体抑制侧边能量辐射的薄膜体声波谐振器 |
CN114978089B (zh) * | 2022-05-20 | 2023-11-21 | 武汉敏声新技术有限公司 | 一种谐振器及其制备方法、滤波器 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004147246A (ja) * | 2002-10-28 | 2004-05-20 | Matsushita Electric Ind Co Ltd | 圧電振動子、それを用いたフィルタ及び圧電振動子の調整方法 |
JP2010109949A (ja) * | 2008-10-31 | 2010-05-13 | Murata Mfg Co Ltd | 電子デバイスの製造方法および圧電デバイスの製造方法 |
JP2010154505A (ja) * | 2008-11-19 | 2010-07-08 | Ngk Insulators Ltd | ラム波装置 |
JP2011166259A (ja) * | 2010-02-05 | 2011-08-25 | Murata Mfg Co Ltd | 弾性表面波装置 |
US20110227671A1 (en) * | 2010-03-16 | 2011-09-22 | Hao Zhang | Temperature compensated thin film acoustic wave resonator |
JP2013214954A (ja) * | 2012-03-07 | 2013-10-17 | Taiyo Yuden Co Ltd | 共振子、周波数フィルタ、デュプレクサ、電子機器及び共振子の製造方法 |
JP2013219743A (ja) * | 2012-03-15 | 2013-10-24 | Taiyo Yuden Co Ltd | 弾性波デバイス |
US20150318837A1 (en) * | 2014-04-30 | 2015-11-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator device with air-ring and temperature compensating layer |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6906451B2 (en) * | 2002-01-08 | 2005-06-14 | Murata Manufacturing Co., Ltd. | Piezoelectric resonator, piezoelectric filter, duplexer, communication apparatus, and method for manufacturing piezoelectric resonator |
JP3889351B2 (ja) * | 2002-12-11 | 2007-03-07 | Tdk株式会社 | デュプレクサ |
JP2005311849A (ja) * | 2004-04-23 | 2005-11-04 | Seiko Epson Corp | 圧電薄膜共振子、フィルタ及び圧電薄膜共振子の製造方法 |
CN103873010B (zh) * | 2014-03-17 | 2017-03-22 | 电子科技大学 | 一种压电薄膜体声波谐振器及其制备方法 |
CN106209002B (zh) * | 2016-06-29 | 2019-03-05 | 电子科技大学 | 一种薄膜体声波谐振器及其制备方法 |
CN107733395A (zh) * | 2017-11-14 | 2018-02-23 | 安徽云塔电子科技有限公司 | 一种压电谐振器和压电谐振器的制备方法 |
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- 2018-05-02 US US16/754,169 patent/US20210211115A1/en not_active Abandoned
- 2018-05-02 JP JP2020526508A patent/JP2021503229A/ja active Pending
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Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004147246A (ja) * | 2002-10-28 | 2004-05-20 | Matsushita Electric Ind Co Ltd | 圧電振動子、それを用いたフィルタ及び圧電振動子の調整方法 |
JP2010109949A (ja) * | 2008-10-31 | 2010-05-13 | Murata Mfg Co Ltd | 電子デバイスの製造方法および圧電デバイスの製造方法 |
JP2010154505A (ja) * | 2008-11-19 | 2010-07-08 | Ngk Insulators Ltd | ラム波装置 |
JP2011166259A (ja) * | 2010-02-05 | 2011-08-25 | Murata Mfg Co Ltd | 弾性表面波装置 |
US20110227671A1 (en) * | 2010-03-16 | 2011-09-22 | Hao Zhang | Temperature compensated thin film acoustic wave resonator |
JP2013214954A (ja) * | 2012-03-07 | 2013-10-17 | Taiyo Yuden Co Ltd | 共振子、周波数フィルタ、デュプレクサ、電子機器及び共振子の製造方法 |
JP2013219743A (ja) * | 2012-03-15 | 2013-10-24 | Taiyo Yuden Co Ltd | 弾性波デバイス |
US20150318837A1 (en) * | 2014-04-30 | 2015-11-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator device with air-ring and temperature compensating layer |
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WO2019095640A1 (zh) | 2019-05-23 |
US20210211115A1 (en) | 2021-07-08 |
KR20200052928A (ko) | 2020-05-15 |
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