CN110391321A - 发光二极管封装体及其制造方法 - Google Patents
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Abstract
一种发光二极管封装体，包括发光二极管芯片、包覆所述发光二极管芯片的光转换层以及环绕设置于所述光转换层周围的反射层，所述发光二极管芯片具有一出光顶面以及位于所述出光顶面相对一侧的第一电极和第二电极，所述发光二极管封装体还包括一支撑层，所述支撑层由金属材料组成，所述支撑层设置于所述反射层底部且围绕所述发光二极管芯片及所述光转换层。
Description
技术领域
本发明涉及一种发光元件,特别涉及一种发光二极管封装体及其制造方法。
背景技术
发光二极管封装体因其节能、环保、光电转化效率高、寿命长等优点已经广泛的应用于照明和显示灯领域。
近年来，随着显示设备趋向逐渐薄型化发展，薄型化且具有高导热效率的发光二极管封装体得到广泛的应用。然而，对于大多数具有薄型化且高导热效率的发光二极管封装体来说，其发光二极管封装体自身轻薄，机械强度较差，因此发光二极管封装体受力，如挤压、碰撞、振动等容易碎裂，从而导致发光二极管封装体可靠性差。
综上所述，有必要提供一种机械强度高、可靠性高的发光二极管封装体及其制造方法。
发明内容
有鉴于此，本发明提供一种机械强度高、可靠性高的发光二极管封装体及其制造方法。
一种发光二极管封装体，包括发光二极管芯片、包覆所述发光二极管芯片的光转换层以及环绕设置于所述光转换层周围的反射层，所述发光二极管芯片具有一出光顶面以及位于所述出光顶面相对一侧的第一电极和第二电极，所述发光二极管封装体还包括一支撑层，所述支撑层由金属材料组成，所述支撑层设置于所述反射层底部且围绕所述发光二极管芯片及所述光转换层。
进一步地，所述支撑层的底面与所述光转换层的底面以及所述第一电极和所述第二电极的底面位于同一水平面。
进一步地，所述支撑层由铜、镍、银中的一种或多种材料制成。
进一步地，所述支撑层的厚度为50～150μm。
进一步地，所述支撑层中还形成有若干穿孔，每一所述穿孔自所述支撑层的顶面朝向底面方向延伸而贯穿所述支撑层。
进一步地，所述光转换层包括贴设于所述发光二极管芯片出光顶面的主体部、贴设于所述发光二极管芯片侧面的延伸部、以及贴设于所述第一电极和第二电极之间的填充部。
进一步地，所述光转换层为包括有荧光粉或量子点的透光性材料组成。
进一步地，所述反射层的顶面与所述光转换层的顶面位于同一水平面。
进一步地，所述反射层由包含TiO2或SiO2的不透光的树脂材料组成，所述反射层的厚度为150～300μm。
进一步地，所述发光二极管芯片由氮化镓或砷化镓半导体材料组成。
在本发明所述发光二极管封装体中，所述反射层底部设置了所述支撑层，如此使得所述发光二极管封装体在保留原有薄型化设计的基础上，增强了所述发光二极管封装体的机械强度。进一步地，由于所述支撑层采用金属材质制成，发光二极管芯片产生的热量通过所述光转换层传递至所述支撑层高效散热，如此，所述支撑层还增加了发光二极管封装体的散热性能。
附图说明
图1所示为发明一实施例中所述发光二极管封装体的剖视图。
图2所示为本发明所述发光二极管封装体的俯视图。
图3所示为本发明所述发光二极管封装体的仰视图。
图4所示为本发明另一实施例中所述发光二极管封装体的仰视图。
图5-9所示为本发明所述发光二极管封装体的制造方法示意图。
主要元件符号说明
如下具体实施方式将上述附图进一步说明本发明。
具体实施方式
下面将本发明实施方式中的附图，对本发明实施方式中的技术方案进行清楚、完整地描述，显然，所描述的实施方式仅仅是本发明一部分实施方式，而不是全部的实施方式。基于本发明中的实施方式，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施方式，都属于本发明保护的范围。
本文中所使用的方位词“第一”、“第二”均是以使用时所述第一基板的位置定义，而并不限定。
除非另有定义，本文所使用的所有的技术和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同。本文中在本发明的说明书中所使用的术语只是为了描述具体的实施方式的目的，不是旨在于限制本发明。
如图1-2所示，本发明一实施例中所述发光二极管封装体100包括一发光二极管芯片10、光转换层20、反射层30以及支撑层40。
所述发光二极管芯片10具有一出光顶面11以及位于所述出光顶面11相对一侧的第一电极12和第二电极13。在本发明实施例中，所述发光二极管芯片10由氮化镓或砷化镓的半导体材料组成。
所述光转换层20包覆所述发光二极管芯片10，所述第一电极12和所述第二电极13底面通过所述光转换层20外露。
具体地，所述光转换层20包括贴设于所述发光二极管芯片10出光顶面11的主体部21、贴设于所述发光二极管芯片10侧面的延伸部22以及位于所述第一电极12和第二电极13之间的填充部23。所述光转换层20具有位于所述主体部21一侧的顶面201和位于所述延伸部22一侧的底面202。所述光转换层20用于转换所述发光二极管芯片10出射光的波长。在本发明实施例中，所述光转换层20为包括有荧光粉或量子点的透光性材料组成。
所述反射层30环绕于所述光转换层20设置。具体地，所述反射层30具有顶面301以及与所述顶面301相对的底面302。其中，所述顶面301与所述光转换层20的顶面201位于同一水平面。在本发明实施例中，所述反射层30由包括TiO2或SiO2的不透光的树脂材料组成，所述反射层30的厚度为150～300μm。
请同时参附图3所示，所述支撑层40设置在所述反射层30的底面302。所述支撑层40的底面401与所述光转换层20的底面202、以及所述第一电极12底面和第二电极13的底面大致位于同一水平面。在本发明实施例中，所述支撑层40由铜、镍、银等一种或多种金属材料组成，所述支撑层40的厚度为50～150μm。
参附图4所示，在本发明另一实施例所述发光二极管封装体100a中，所述支撑层40中还形成有若干穿孔41。每一所述穿孔41自所述顶面402朝向所述底面401方向延伸而贯穿所述支撑层40。所述穿孔41用于增加所述支撑层40与所述反射层30之间的连接强度以及密合度。在本发明实施例中，所述穿孔41的横截面呈矩形，所述穿孔41等间距、均匀的分布于所述支撑层40中，每一所述穿孔41与所述光转换层20之间的距离相等。可以理解地，在其他实施例中，所述穿孔41的数量、形状以及分布可以为其他方式。
在本发明所述发光二极管封装体中，所述反射层30底部设置了所述支撑层40，如此使得所述发光二极管封装体100在保留原有薄型化设计的基础上，增强了所述发光二极管封装体的机械强度。进一步地，由于所述支撑层40采用金属材质制成，发光二极管芯片10产生的热量通过所述光转换层20传递至所述支撑层40高效散热，如此，所述支撑层40还增加了发光二极管封装体100的散热性能。
所述发光二极管封装体100、100a的制造方法如下：
步骤一，如图5所示，提供支撑层40以及形成于所述支撑层40上的反射层30，以及提供发光二极管芯片10、支撑模具200。
所述反射层30朝向所述支撑层40上开设有多个开口304。所述支撑模具200上具有粘结层210。
步骤二：如图6所示，将所述支撑层40、反射层30粘结于所述支撑模具200上，并将所述发光二极管芯片10容置于所述开口304中，以及在开口304中填充光转换材料並固化以形成所述光转换层20。
步骤三：如图7所示，提供一磨具300，以磨平所述光转换层20的外表面。
步骤四：如图8所示，移除所述支撑模具200。
步骤五：如图9所示，依次切割所述反射层30及所述支撑层40，从而得到所述发光二极管封装体100、100a。
可以理解的是，对于本领域的普通技术人员来说，可以根据本发明的技术构思做出其它各种相应的改变与变形，而所有这些改变与变形都应属于本发明的权利要求的保护范围。
Claims (10)
1.一种发光二极管封装体，包括发光二极管芯片、包覆所述发光二极管芯片的光转换层以及环绕设置于所述光转换层周围的反射层，所述发光二极管芯片具有一出光顶面以及位于所述出光顶面相对一侧的第一电极和第二电极，其特征在于：所述发光二极管封装体还包括一支撑层，所述支撑层由金属材料组成，所述支撑层设置于所述反射层与所述出光顶面相对的底部且围绕所述发光二极管芯片及所述光转换层。
2.如权利要求1所述发光二极管封装体，其特征在于：所述支撑层的底面与所述光转换层的底面以及所述第一电极和所述第二电极的底面位于同一水平面。
3.如权利要求1所述发光二极管封装体，其特征在于：所述支撑层由铜、镍、银中的一种或多种材料制成。
4.如权利要求1所述发光二极管封装体，其特征在于：所述支撑层的厚度为50～150μm。
5.如权利要求1所述发光二极管封装体，其特征在于：所述支撑层中还形成有若干穿孔，每一所述穿孔自所述支撑层的顶面朝向底面方向延伸而贯穿所述支撑层。
6.如权利要求1所述发光二极管封装体，其特征在于：所述光转换层包括贴设于所述发光二极管芯片出光顶面的主体部、贴设于所述发光二极管芯片侧面的延伸部、以及贴设于所述第一电极和第二电极之间的填充部。
7.如权利要求1所述发光二极管封装体，其特征在于：所述光转换层为包括有荧光粉或量子点的透光性材料组成。
8.如权利要求1所述发光二极管封装体，其特征在于：所述反射层的顶面与所述光转换层的顶面位于同一水平面。
9.如权利要求1所述发光二极管封装体，其特征在于：所述反射层由包含TiO2或SiO2的不透光的树脂材料组成，所述反射层的厚度为150～300μm。
10.如权利要求1所述发光二极管封装体，其特征在于：所述发光二极管芯片由氮化镓或砷化镓半导体材料组成。
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