CN103123949A - 可挠式发光二极管封装结构及其制造方法 - Google Patents
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Abstract
一种可挠式发光二极管封装结构,其包括可挠式基板以及设置在该可挠式基板上的发光二极管芯片。所述可挠式基板包括一软性基板及一硬性基板。所述硬性基板包括一顶面、与所述顶面相对的底面以及连接该顶面和底面的侧表面。所述发光二极管芯片设置在硬性基板的顶面上,所述软性基板围设连接在硬性基板侧表面上,并且硬性基板的底面暴露在软性基板外。本发明的可挠式发光二极管封装结构的散热效率更高。本发明还提供一种可挠式发光二极管封装结构的制造方法。
Description
技术领域
本发明涉及一种发光二极管封装结构及其制造方法,特别涉及一种可挠式发光二极管封装结构及其制造方法。
背景技术
发光二极管是一种节能、环保、长寿命的固体光源,因此近十几年来对发光二极管技术的研究一直非常活跃,发光二极管也有渐渐取代日光灯、白炽灯等传统光源的趋势。
根据实际需要,照明产品中经常会使用可挠式的发光二极管封装结构。现有的可挠式发光二极管封装结构往往将带有硬性基板的发光二极管芯片通过软性基板包覆,仅露出发光二极管芯片,再通过透明层覆盖发光二极管芯片,达到可挠的效果。采用这样的结构设计,发光二极管封装结构在垂直方向上具有透明层、发光二极管管芯片、硬性基板及软性基板,发光二极管芯片所产生的热量需要经过硬性基板板以及软性基板两层结构才能够传递到外部,热量难以有效地从发光二极管封装结构的底部导出,从而导致散热效率差。
发明内容
有鉴于此,有必要提供一种散热效率较高的可挠式发光二极管封装结构及其制造方法。
一种可挠式发光二极管封装结构,其包括可挠式基板以及设置在该可挠式基板上的发光二极管芯片。所述可挠式基板包括一软性基板及一硬性基板。所述硬性基板包括一顶面、与所述顶面相对的底面以及连接该顶面和底面的侧表面。所述发光二极管芯片设置在硬性基板的顶面上,所述软性基板围设连接在硬性基板侧表面上,并且硬性基板的底面暴露在软性基板外。
一种可挠式发光二极管封装结构的制造方法,该方法包括以下几个步骤:
步骤1,提供一临时基板,在该临时基板上设置至少一硬性基板,该硬性基板包括一顶面、与所述顶面相对的底面以及连接该顶面和底面的侧表面,所述硬性基板的底面设置在临时基板上;
步骤2,在临时基板上设置软性基板,该软性基板围设连接在硬性基板侧表面上;
步骤3,将至少一个发光二极管芯片设置在硬性基板的顶面上;及
步骤4,去除临时基板。
上述的可挠式发光二极管封装结构及其制造方法中,软性基板围设连接在硬性基板侧表面上,并且硬性基板的底面暴露在软性基板外,从而使得发光二极管芯片所产生的热量可以直接通过硬性基板传递到外部,热量传递所经过的路线较短,散热效率较高。
附图说明
图1为本发明第一实施方式中的可挠式发光二极管封装结构示意图。
图2为本发明第二实施方式中的可挠式发光二极管封装结构示意图。
图3为本发明第一实施方式中的可挠式发光二极管封装结构的制造方法流程图。
图4为本发明第二实施方式中的可挠式发光二极管封装结构的制造方法流程图。
主要元件符号说明
可挠式基板 | 10、 |
导电电极 | 20、 |
发光二极管芯片 | 30、 |
透明覆盖层 | 40、 400 |
反射杯结构 | 50 |
临时基板 | 60 |
软性基板 | 11、 |
硬性基板 | 12、 |
电极 | 121 |
容置杯 | 51 |
如下具体实施方式将结合上述附图进一步说明本发明。
具体实施方式
下面将结合附图,对本发明作进一步的详细说明。
实施方式一
请参阅图1,本发明第一实施方式提供的一种可挠式发光二极管封装结构包括可挠式基板10、设置在该可挠式基板10上的两个导电电极20、设置在可挠式基板10上的发光二极管芯片30以及包覆该发光二极管芯片30的透明覆盖层40。
所述可挠式基板10为一平板结构,其包括一软性基板11以及一厚度大于该软性基板11的硬性基板12。该硬性基板12包括一顶面、一与所述顶面相对的底面以及连接该顶面和底面的侧表面,该软性基板11围设连接在硬性基板12侧表面上,并且硬性基板12的底面与软性基板11的底面齐平。软性基板11由绝缘材料构成,在本实施方式中,软性基板11采用硅树脂或者环氧树脂材料构成。硬性基板12的顶部上分别设置有两个电极121,并且该两个电极121分别从硬性基板12的顶面及侧表面上暴露。硬性基板12由高导热绝缘材料构成,在本实施方式中,硬性基板12采用陶瓷、硅或者塑料材料构成。
可以想到的是,为了进一步地缩小可挠式发光二极管封装结构的体积,可使所述软性基板的底面到硬性基板的顶面的距离小于等于所述硬性基板的底面到硬性基板的顶面的距离,亦即硬性基板12的底面与软性基板11的底面齐平或者硬性基板12的底面突出软性基板11的底面。
所述两个导电电极20设置在软性基板11上,并且分别与两个电极121在硬性基板12的侧表面上露出的部分电性连接。导电电极20也可为涂布在软性基板11上的导电胶,该导电胶包含有环氧树脂以及银。硬性基板12的硬度大于软性基板11以及该导电电极20的硬度。
所述发光二极管芯片30设置在硬性基板12的顶面上,并且与电极121顶端暴露出来的端部电性连接。
所述透明覆盖层40覆盖在可挠式基板10的表面上,将导电电极20以及发光二极管芯片30全部包覆。可以理解的是,所述透明覆盖层40内还可包含有荧光粉。
在使用时,由于发光二极管芯片30设置在硬性基板12上,可避免在弯折时发光二极管芯片30出现破裂,并且硬性基板12的底面暴露在软性基板11外,从而发光二极管芯片30所产生的热量可直接通过硬性基板12传递到外部,热量传递所经过的路线较短,散热效率比较高。另外,由于硬性基板12的底面与软性基板11的底面齐平,也可使发光二极管封装结构更加的薄化。
实施方式二
请参阅图2,其为本发明第二实施方式提供的可挠式发光二极管封装结构的示意图,该第二实施方式的可挠式发光二极管封装结构与第一实施方式的可挠式发光二极管封装结构的区别在于:第二实施方式的可挠式发光二极管封装结构还包括一设置在可挠式基板10上的一反射杯结构50,该反射杯结构50从顶面沿底面方向开设形成一容置杯51,该容置杯51的内表面为倾斜面,该倾斜面自反射杯结构50的顶面向底面方向延伸并沿容置杯51的径向向内倾斜,使整个容置杯51上宽下窄,呈一漏斗状。容置杯51内表面还涂敷有反光材料。发光二极管芯片30容置在该容置杯51中,透明覆盖层40覆盖在容置杯51的顶部开口上。
可以理解的是,容置杯51中还可以填充有封装材料,该封装材料中含有荧光粉。
请参阅图3,其为本发明第一实施方式提供的一种可挠式发光二极管封装结构的制造方法的流程图,该可挠式发光二极管封装结构的制造方法包括以下几个步骤:
步骤1,提供一临时基板60,在该临时基板60上设置多个硬性基板12,所述硬性基板12包括一顶面、与所述顶面相对的底面以及连接该顶面和底面的侧表面,每个硬性基板12的顶面上分别设置有两个电极121,并且该两个电极121分别从硬性基板12的侧表面上暴露,每个硬性基板12的底面被设置在临时基板60上。硬性基板12由高导热绝缘材料构成,在本实施方式中,硬性基板12采用陶瓷、硅或者塑料材料构成。
步骤2,在临时基板60上设置软性基板11,该软性基板11围设连接在硬性基板12侧表面上。软性基板11由绝缘材料构成,在本实施方式中,软性基板11采用硅树脂或者环氧树脂材料构成。
步骤3,在软性基板11上设置导电电极20,该导电电极20分别与两个电极121在硬性基板12的侧表面上露出的部分电性连接。
步骤4,将多个发光二极管芯片30分别设置在硬性基板12的顶面上,并且与硬性基板12的电极121电性连接。
步骤5,将一透明覆盖层40覆盖在导电电极20以及发光二极管芯片30上。可以理解的是,所述透明覆盖层40内还可包含有荧光粉。
步骤6,去除临时基板60,然后进行切割,形成多个发光二极管封装结构。
请参阅图4,其为本发明第二实施方式提供的一种可挠式发光二极管封装结构的制造方法的流程图,该可挠式发光二极管封装结构的制造方法包括以下几个步骤:
步骤1,提供一临时基板60,在该临时基板60上设置多个硬性基板12,所述硬性基板12包括一顶面、与所述顶面相对的底面以及连接该顶面和底面的侧表面,每个硬性基板12的顶面上分别设置有两个电极121,并且该两个电极121分别从硬性基板12的侧表面上暴露,每个硬性基板12的底面被设置在临时基板60上。硬性基板12由高导热绝缘材料构成,在本实施方式中,硬性基板12采用陶瓷、硅或者塑料材料构成。
步骤2,在临时基板60上设置软性基板11,该软性基板11围设连接在硬性基板12侧表面上。软性基板11由绝缘材料构成,在本实施方式中,软性基板11采用硅树脂或者环氧树脂材料构成。
步骤3,在软性基板11上设置导电电极20,该导电电极20分别与两个电极121在硬性基板12的侧表面上露出的部分电性连接。
步骤4,在软性基板11上设置反射杯结构50,该反射杯结构50从顶面沿底面方向开设形成多个容置杯51,多个硬性基板12分别容置在每个容置杯51中。该容置杯51的内表面为倾斜面,该倾斜面自反射杯结构50的顶面向底面方向延伸并沿容置杯51的径向向内倾斜,使整个容置杯51上宽下窄,呈一漏斗状。容置杯51内表面还涂敷有反光材料。
步骤5,将多个发光二极管芯片30分别设置在每个硬性基板12的顶面上,并且与硬性基板12的电极121电性连接。
步骤6,将一透明覆盖层40覆盖在容置杯51的顶部开口上。
步骤7,去除临时基板60,然后进行切割,形成多个发光二极管封装结构。
相较于现有技术,本发明的可挠式发光二极管封装结构及其制造方法中,软性基板围设连接在硬性基板侧表面上,并且硬性基板的底面暴露在软性基板外,从而使得发光二极管芯片所产生的热量可以直接通过硬性基板传递到外部,热量传递所经过的路线较短,散热效率较高。
可以理解的是,对于本领域的普通技术人员来说,可以根据本发明的技术构思做出其它各种像应的改变与变形,而所有这些改变与变形都应属于本发明权利要求的保护范围。
Claims (10)
1.一种可挠式发光二极管封装结构,其包括可挠式基板以及设置在该可挠式基板上的发光二极管芯片,其特征在于:所述可挠式基板包括一软性基板及一硬性基板,所述硬性基板包括一顶面、与所述顶面相对的底面以及连接该顶面和底面的侧表面,所述发光二极管芯片设置在硬性基板的顶面上,所述软性基板围设连接在硬性基板侧表面上,并且硬性基板的底面暴露在软性基板外。
2.如权利要求1所述的可挠式发光二极管封装结构,其特征在于:所述软性基板的底面到硬性基板的顶面的距离小于等于所述硬性基板的底面到硬性基板的顶面的距离。
3.如权利要求1所述的可挠式发光二极管封装结构,其特征在于:所述硬性基板的底面与所述软性基板的底面齐平。
4.如权利要求1所述的可挠式发光二极管封装结构,其特征在于:所述硬性基板的顶面分别设置有两个电极,并且该两个电极分别从硬性基板的顶面及侧表面露出,所述发光二极管芯片与所述两个电极在硬性基板的顶面露出的部分电性连接,所述软性基板上还设置有两个导电电极,该导电电极分别与两个电极在硬性基板的侧表面露出的部分电性连接。
5.如权利要求4所述的可挠式发光二极管封装结构,其特征在于:所述可挠式发光二极管封装结构还包括一透明覆盖层,所述透明覆盖层覆盖在导电电极及发光二极管芯片上。
6.如权利要求5所述的可挠式发光二极管封装结构,其特征在于:所述可挠式发光二极管封装结构还包括一反射杯结构,该反射杯结构从顶面沿底面方向开设形成一容置杯,发光二极管芯片容置在该容置杯中,透明覆盖层覆盖在容置杯的顶部开口上。
7.一种可挠式发光二极管封装结构的制造方法,该方法包括以下几个步骤:
步骤1,提供一临时基板,在该临时基板上设置至少一硬性基板,该硬性基板包括一顶面、与所述顶面相对的底面以及连接该顶面和底面的侧表面,所述硬性基板的底面设置在临时基板上;
步骤2,在临时基板上设置软性基板,该软性基板围设连接在硬性基板侧表面上;
步骤3,将至少一个发光二极管芯片设置在硬性基板的顶面上;及
步骤4,去除临时基板。
8.如权利要求7所述的可挠式发光二极管封装结构的制造方法,其特征在于:每个硬性基板的顶面上分别设置有两个电极,并且该两个电极分别从硬性基板的侧表面上暴露,在步骤2之后还包括在软性基板上设置导电电极,该导电电极分别与两个电极在硬性基板的侧表面上露出的部分电性连接的步骤。
9.如权利要求8所述的可挠式发光二极管封装结构的制造方法,其特征在于:在步骤3之后还包括将一透明覆盖层覆盖在导电电极以及发光二极管芯片的步骤。
10.如权利要求9所述的可挠式发光二极管封装结构的制造方法,其特征在于:所述软性基板上还设置有反射杯结构,该反射杯结构从顶面沿底面方向开设形成多个容置杯,多个硬性基板分别容置在每个容置杯中,透明覆盖层覆盖在容置杯的顶部开口上。
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