CN110391242A - Step-like word line structure of L shape and preparation method thereof and three-dimensional storage - Google Patents
Step-like word line structure of L shape and preparation method thereof and three-dimensional storage Download PDFInfo
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- CN110391242A CN110391242A CN201910705463.0A CN201910705463A CN110391242A CN 110391242 A CN110391242 A CN 110391242A CN 201910705463 A CN201910705463 A CN 201910705463A CN 110391242 A CN110391242 A CN 110391242A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/40—EEPROM devices comprising charge-trapping gate insulators characterised by the peripheral circuit region
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Abstract
A kind of step-like word line structure of L shape and preparation method thereof and three-dimensional storage, word line structure includes: multiple L shape word line cells, each L shape word line cell long side side extends along second direction and one grid line gap of neighbour, and short side side extends along a first direction and short side includes a wordline exit；Wherein, the wordline exit is formed in a step-like laminated construction, the laminated construction includes multiple laminations pair being formed by insulating materials, replacement metal area is used as close to the region in grid line gap by one of lamination in each lamination pair, the replacement metallic region includes the short side region surface metal layer and internally positioned short side region inner metal layer positioned at surface, in a first direction, the length of short side region surface metal layer is greater than the length of short side region inner metal layer, and the wordline exit corresponds to the short side region surface metal layer.Ensure in the case where etching selection ratio is not high enough, even if etching is excessively, also there is a phenomenon where wordline short circuits.
Description
Technical field
The disclosure belongs to semiconductor memory and integrated technology field, is related to a kind of step-like word line structure of L shape and its system
Make method and three-dimensional storage.
Background technique
Three dimensional NAND memory technology is the technology that current country is giving priority to.
Three dimensional NAND memory faces the problem that the following integrated difficulty increases.128 layers and the above three dimensional NAND memory face
Face wordline Joining Technology problem, as the three-dimensional storage number of plies increases, the etching of wordline connecting hole requires higher and higher selection
Than otherwise connecting hole etching breakdown wordline exit/solder joint (pad) probability can be significantly greatly increased, to cause word short-circuit between conductors.
The design difficulty of three-dimensional storage wordline exit (SS) also gradually increases simultaneously.
Summary of the invention
(1) technical problems to be solved
Present disclose provides a kind of step-like word line structure of L shape and preparation method thereof and three-dimensional storages, at least partly
Solve technical problem set forth above.
(2) technical solution
According to one aspect of the disclosure, a kind of step-like word line structure of L shape is provided, comprising: multiple L shape wordline lists
Member, each L shape word line cell long side side extends along second direction (direction y) and one grid line gap of neighbour, one lateral edge of short side
First direction (direction x) extend and short side include a wordline exit；Wherein, it is step-like to be formed in one for the wordline exit
Laminated construction, the laminated construction include multiple laminations pair being formed by insulating materials, by each lamination pair wherein
One lamination includes the short side region positioned at surface as metal area, the replacement metallic region is replaced close to the region in grid line gap
Surface metal-layer and internally positioned short side region inner metal layer, in a first direction, the length of short side region surface metal layer
Degree is greater than the length of short side region inner metal layer, and the wordline exit corresponds to the short side region surface metal layer.
In some embodiments of the present disclosure, wordline exit is used to connect the connecting hole solder joint of logic control circuit, position
Distance in short side region surface metal layer apart from grid line gap is the position greater than the short side region inner metal layer length
It sets.
In some embodiments of the present disclosure, the replacement metallic region also includes the long side region surface gold positioned at surface
Belong to layer and internally positioned long border region inner metal layer, in a second direction, the length and length of long side region surface metal layer
The equal length of border region inner metal layer.
In some embodiments of the present disclosure, multiple L shape word line cells are sequentially connected along a first direction and in step-like
Distribution.
In some embodiments of the present disclosure, multiple word line cells, which are laminated along third direction and along second direction, is in
Step-like distribution.
In some embodiments of the present disclosure, the multiple L shape word line cell is at least a pair of L-shaped word line cell, in pairs
Two L shape word line cells separated by grid line gap and be in dislocation mirror image distribution, dislocation difference one step height, it is described
The height of one step is equal to the height of a lamination pair, and the direction of dislocation is along third direction (direction z), third direction and the
One direction and second direction are vertical.
In some embodiments of the present disclosure, the step-like word line structure of L shape, further includes: protective layer is covered in multiple L shapes
Between word line cell and its above each word line cell, protective layer upper surface is run through in grid line gap.
In some embodiments of the present disclosure, the L shape word line cell long side is for connecting the area core (core).
A kind of production method of the step-like word line structure of L shape another aspect of the present disclosure provides, comprising: system
Make a step-like laminated construction, which includes multiple laminations pair being formed by insulating materials, and each lamination is to conduct
One step；Multiple regions are divided into the laminated construction, the laminated construction in each region is used to form a L shape wordline list
Member；The surface layer step end of the laminated construction in each region is handled, so that along a first direction, surface layer step end
Etch rate is higher than the etch rate for the structure being disposed below；To treated, laminated construction is performed etching to form a grid line
Gap, surface of the depth direction which extends and etch along second direction perpendicular to laminated construction；Based on described
Grid line gap performs etching one of lamination of each lamination centering close to the region in grid line gap and empties, along first
Direction, the corresponding size in region that one of lamination in the step of surface layer is etched away are greater than structure immediately below it and are etched away
The corresponding size in region；In etched-off area deposited metal material, replacement metallic region is obtained, which includes position
Short side region surface metal layer and internally positioned short side region inner metal layer in surface, in a first direction, short side area
The length of field surface metal layer is greater than the length of short side region inner metal layer, and wordline exit corresponds to the short side region surface gold
Belong to layer；To form multiple L shape word line cells, each L shape word line cell long side side extends along second direction and neighbour one
Grid line gap, short side side extends along a first direction and short side includes the wordline exit.
In some embodiments of the present disclosure, when the lamination clock synchronization of lamination packs silicon oxide-containing and silicon nitride, to each
The mode that the surface layer step end of the laminated construction in region is handled are as follows: improved by way of ion implanting or selection deposition
Nitrogen concentration in the silicon nitride of surface layer step end.
In some embodiments of the present disclosure, to treated, laminated construction performed etching to form a grid line gap
Before step, further includes: the step of forming protective layer.
In some embodiments of the present disclosure, after the step of obtaining replacement metallic region further include: formed for connecting
The step of connecing the connecting hole of logic control circuit, the connecting hole run through protective layer and the connecting hole bond pad locations with wordline exit
It corresponds to and connects, it is short greater than described which, which is located at the distance in short side region surface metal layer apart from grid line gap,
The position of border region inner metal layer length.
In some embodiments of the present disclosure, the step-like laminated construction is along a first direction and/or second direction
It protrudes outward.
In some embodiments of the present disclosure, the replacement metallic region also includes the long side region surface gold positioned at surface
Belong to layer and internally positioned long border region inner metal layer, in a second direction, the length and length of long side region surface metal layer
The equal length of border region inner metal layer.
According to the another aspect of the disclosure, a kind of three-dimensional storage is provided, any L shape referred to comprising the disclosure
Step-like word line structure.
(3) beneficial effect
It can be seen from the above technical proposal that step-like word line structure of L shape that the disclosure provides and preparation method thereof and three
Memory is tieed up, is had the advantages that
By the way that the replacement metallic region on L shape short side step end surface layer is arranged based on grid line gap than internal replacement metal
The size in region (direction x) in a first direction is big, so as to the connecting hole based on the positioning of grid line gap perpendicular to plane
(SSCT) position sets SSCT to be greater than the replacement metallic region ruler of L shape short side step terminus inner in a first direction
Very little position, so that corresponding be lamination below when SSCT is connect with the replacement metallic region on L shape short side step end surface layer
Multiple laminations pair in structure, for example, multiple silica/silicon nitride stacks pair, then realizing each connection (contact)
All it is insulating layer below the metal layer of drop point, is ensured with this in the case where etching selection ratio is not high enough, even if etching is excessively,
There is a phenomenon where wordline short circuits.
Detailed description of the invention
Fig. 1 is the top view of the step-like word line structure of L shape according to shown in one embodiment of the disclosure.
Fig. 2 is to iris out the structural representation that part A is splitted along A1-A1 line in the step-like word line structure of L shape as shown in Figure 1
Figure, the x sectional view of corresponding L shape short side.
Fig. 3 is to iris out the structural representation that part B is splitted along B1-B1 line in the step-like word line structure of L shape as shown in Figure 1
Figure, the y sectional view of corresponding L shape short side.
Fig. 4 is to iris out the structural representation that part A is splitted along A2-A2 line in the step-like word line structure of L shape as shown in Figure 1
Figure, the x sectional view of corresponding L shape long side.
Fig. 5 is to iris out the structural representation that part B is splitted along B2-B2 line in the step-like word line structure of L shape as shown in Figure 1
Figure, the y sectional view of corresponding L shape long side.
Fig. 6 is (a) that the step-like word line structure of L shape includes multiple word line cells of (direction z) stacking along a first direction
Top view and the amplified schematic perspective view of (b) detail section.
Fig. 7 is short to be touched in the three-dimensional storage comprising the step-like word line structure of L shape as shown in Figure 1 by connecting hole
Border region surface metal-layer realizes the structural schematic diagram that logic control circuit is connect with wordline.
Fig. 8 is the structural schematic diagram of structure as shown in Figure 7 irising out part A and splitting along A3-A3 line, and corresponding L shape is short
The x sectional view on side.
Fig. 9 is the production method flow chart of the step-like word line structure of L shape according to shown in one embodiment of the disclosure.
[symbol description]
1- word line cell；
11 protective layers；12- laminated construction；
The first laminated material of 121-；The second laminated material of 122-；
22- replaces metallic region；
221- short side region surface metal layer；222- short side region inner metal layer；
223- long side region surface metal layer；224- long border region inner metal layer；
3- grid line gap (GSL, Gate Line Slit)；4- connecting hole.
Specific embodiment
In the prior art, the control circuit Yu wordline (wordline or gateline) of three-dimensional storage by perpendicular to
The connecting hole (SSCT) and step-like wordline exit (SS, Stair Step) of plane connect.With three-dimensional storage height
It is continuously increased, SSCT breakdown SS is continuously increased so as to cause the probability of two or more pieces wordline short circuit.128 layers and 192 layers of three-dimensional
The selection of memory requirement SSCT etching is compared higher than 400 and 600, and 192 layers or more of three-dimensional storage requires higher SSCT
Etching selection ratio.However current lithographic technique is unable to satisfy the selection than requiring.
The disclosure proposes a kind of step-like word line structure of L shape and preparation method thereof and three-dimensional storage, by being based on grid line
Replacement metallic region in a first direction (the x side of the replacement metallic region than inside on L shape short side step end surface layer is arranged in gap
To) size it is big, so as to based on grid line gap positioning perpendicular to plane connecting hole (SSCT) position, SSCT is arranged
For be greater than in a first direction L shape short side step terminus inner replacement metallic region size position, thus when SSCT and L shape
When the replacement metallic region connection on short side step end surface layer, corresponding is below multiple laminations pair in laminated construction, such as
For multiple silica/silicon nitride stacks pair, then realizing below the metal layer of each connection (contact) drop point is insulation
Layer, is ensured with this in the case where etching selection ratio is not high enough, even if etching is excessively, also there is a phenomenon where wordline short circuits.
In the step-like word line structure of L shape of the disclosure, L shape is the shape that top view is presented, the step-like word line structure of L shape
Contain at least two word line cell.In one embodiment, multiple (two or more numbers) word line cells can be along first party
It is sequentially connected to (direction x) and is in step-like distribution, i.e., (direction x) includes multiple word line cells, multiple words along a first direction
The wordline exit head end of the wordline exit end of previous word line cell and the latter word line cell is in step in line unit
Shape distribution, four word line cells along x directional spreding as schematically shown in Figure 1, wherein the connection of two neighboring word line cell is closed
System is as shown in Figure 2.In another embodiment, multiple word line cells can also be laminated along third direction (direction z) and be in step
Shape distribution, that is, the multiple word line cells being laminated along second direction (direction y, (b) is illustrated to be negative direction of the y-axis in Fig. 6) according to
It is secondary to protrude outward, the lamination of multiple word line cells of step-like distribution is formed, the difference in height h of step is the height of a lamination pair
Degree, in Fig. 6 (a) illustrated along the word line cell of two, the direction z stacking and as what (b) illustrated in Fig. 6 is in step-like
The form of distribution.
In embodiment of the disclosure, in the step-like word line structure of L shape, the production method for replacing metallic region is to pass through utilization
Grid line gap etching is located at what then subregional second laminated material in grid line gap both ends obtained after metal is filled,
Therefore in one embodiment, word line cell occurs in pairs, is illustrated (shows in Fig. 1 with pairs of L shape word line cell in full
Anticipate two word line cells assumed a " convex " shape), two pairs of word line cells separate by grid line gap and be in that the mirror image that misplaces divides
Cloth (height of one step of difference), as depicted in figs. 1 and 2.Other preparation methods can be individually in the side shape in grid line gap
At L-shaped word line cell, therefore the number of word line cell can be multiple (being greater than 1), includes odd and even number, is not limited into
Pair even number form.
In the step-like word line structure of L shape of the disclosure, L shape long side for connecting the area core (core), L shape short side be used as with
Contact jaw/solder joint (pad) of control circuit connection.By to L shape short side step end surface region adjust ion concentration (or
Using other control methods, any mode that can be realized etch rate differentiation), so that interior zone is compared in surface region
Etch rate it is fast (wet etching or other etch tools), thus the etch rate difference based on surface layer and internal material,
It is bigger than the size of short side region inner metal layer below that short side region surface metal layer is obtained on (direction x) in a first direction
Structure, i.e., in a first direction, the length of short side region surface metal layer is greater than the length of short side region inner metal layer, In
It is short side region inner metal layer by inner part below short side region surface metal layer, outer part is in laminated construction
(reservation not being etched away) multiple laminations pair.In this way, just foring the corresponding bottom of L shape surface metal marginal position and being
The structure of insulating layer, when being attached hole etching contact, it can be ensured that in the case where etching selection ratio is not high enough, even if carving
Excessively, also there is a phenomenon where wordline short circuits for erosion.
For the purposes, technical schemes and advantages of the disclosure are more clearly understood, below in conjunction with specific embodiment, and reference
The disclosure is further described in attached drawing.
First embodiment
In first exemplary embodiment of the disclosure, a kind of step-like word line structure of L shape is provided.
Fig. 1 is the top view of the step-like word line structure of L shape according to shown in one embodiment of the disclosure.Fig. 2 is as shown in Figure 1
The step-like word line structure of L shape in iris out the structural schematic diagram that part A is splitted along A1-A1 line, the direction x of corresponding L shape short side
Cross-sectional view.Fig. 3 is to iris out the structural representation that part B is splitted along B1-B1 line in the step-like word line structure of L shape as shown in Figure 1
Figure, the y sectional view of corresponding L shape short side.Fig. 4 be the step-like word line structure of L shape as shown in Figure 1 in iris out part A along
The structural schematic diagram that A2-A2 line is splitted, the x sectional view of corresponding L shape long side.Fig. 5 is the step-like word of L shape as shown in Figure 1
The structural schematic diagram that part B is splitted along B2-B2 line, the y sectional view of corresponding L shape long side are irised out in cable architecture.
It should be noted that illustrate a word line cell to the laminated construction of formation in the present embodiment with four laminations,
Therefore the cross-sectional view of corresponding diagram 3 and the long side in Fig. 5, it is apparent that the short side region surface metal of corresponding wordline exit
Layer 221 is located at the top layer of four laminations pair, corresponds to insulating layer below the wordline exit in order to illustrate two word line cells
Lamination pair, therefore Fig. 3 and Fig. 5 illustrate 6 laminations pair；In Fig. 2 and Fig. 4, the two of (direction x) along a first direction are illustrated
A L shape word line cell pair, the wordline exit end of the previous word line cell pair of two adjacent L shape word line cells pair with it is latter
The wordline exit head end of a word line cell pair is in step-like distribution.In each L shape word line cell to inside, two pairs of words
Line unit is separated by grid line gap and is in dislocation mirror image distribution, is misplaced and is differed the height of a step, clearly shows in figure
Meaning along a first direction, is located at the length of the short side region surface metal layer 221 of surface layer (top layer) greater than (inside) below
The length of short side region inner metal layer 222 illustrates 5 laminations pair.Those skilled in the art can illustrate according to above-mentioned
Know multiple (being more than or equal to two) short sides of L shape word line cell pair and the schematic cross-sectional view of long side.
In conjunction with shown in Fig. 1-Fig. 5, the step-like word line structure of L shape of the disclosure, comprising: at least a pair of L-shaped word line cell, often
To in L shape word line cell, each 1 long side side of L shape word line cell extends along second direction (direction y) and one grid line of neighbour stitches
Gap 3, (direction x) extension and short side include a wordline exit along a first direction for short side side；Wherein, the wordline exit
It is formed in a laminated construction 12, which includes multiple laminations pair being formed by insulating materials, by each lamination
One of lamination (lamination that for example, the second laminated material 122 is formed) of centering is used as close to the region in grid line gap 3 to be replaced
Metal area 22 is changed, which includes positioned at the short side region surface metal layer 221 on surface and internally positioned short
Border region inner metal layer 222, in a first direction, the length of short side region surface metal layer 221 are greater than inside short side region
The length of metal layer 222, the wordline exit correspond to the short side region surface metal layer 221.
In the present embodiment, L shape long side is connect for connecting the area core (core), L shape short side as what is connected to the control circuit
Contravention/solder joint (pad).
In conjunction with shown in Fig. 1-Fig. 3, in L shape short side, which includes the short side region surface positioned at surface
Metal layer 221 and internally positioned short side region inner metal layer 222, in a first direction, short side region surface metal layer 221
Length be greater than short side region inner metal layer 222 length.In conjunction with shown in Fig. 1, Fig. 4 and Fig. 5, in L shape long side, replacement gold
Belonging to region 22 includes the long side region surface metal layer 223 and internally positioned long border region inner metal layer 224 positioned at surface,
In a second direction (y-direction), the length of the length of long side region surface metal layer 223 and long border region inner metal layer 224
It is equal.
It should be noted that generally speaking, long side region surface metal layer 223 and short side region surface metal layer 221 are
Same diffusion layer (the being surface diffusion layer) part that in two directions (first direction and second direction) diffuses out, point
Not Wei Yu long side and short side described as different titles, two therefore in order to introduce differentiation that is convenient and carrying out long short side
Person is substantially the both direction of the same L shape diffusion layer；Similarly, inside long border region inner metal layer 224 and short side region
Metal layer 222 is also the part that the same diffusion layer (being internal diffusion layer) in two directions indicates.Correspondingly, L shape platform
For L shape long side in stepped structure for connecting the area core (core), the length of the corresponding replacement metallic region of L shape long side is homogeneous
It is used as contact jaw/the solder joint (pad) connected to the control circuit, table in the corresponding replacement metallic region of L shape short side Deng, L shape short side
Layer is bigger compared to internal size, if surface layer and internal replacement metallic region are integrally compared, the replacement on surface layer
Metallic region is that short side is longer " L shape ", and internal replacement metallic region is " I shape ", and the long side length of the two is quite (along y
Direction is equal)；Or in other embodiments, the replacement metallic region on surface layer is that short side is longer " L shape ", internal replacement gold
Belonging to region is shorter " the L shape " of short side, and the long side length of the two is suitable.
In the present embodiment, as depicted in figs. 1 and 2, two pairs of word line cells 1 are separated by grid line gap 3 and in mistakes
Position mirror image distribution, the height of dislocation one step of difference, the height of one step are equal to the height of a lamination pair, dislocation
Direction along third direction (direction z), third direction and first direction and second direction are vertical.
In the present embodiment, lamination includes multiple laminations pair being formed by insulating materials to 12, and each lamination is to including first
Laminated material 121 and the second laminated material 122, for example, the first laminated material 121 is silica, the second laminated material 122 is nitrogen
SiClx.
The distribution form of multiple word line cells or multiple word line cells pair is introduced with reference to the accompanying drawing.Fig. 6 is L shape step
Shape word line structure includes that (a) top view and (b) detail section of multiple word line cells of (direction z) stacking along a first direction are put
Schematic perspective view after big.Fig. 7 is to pass through in the three-dimensional storage comprising the step-like word line structure of L shape as shown in Figure 1
Connecting hole touches short side region surface metal layer and realizes the structural schematic diagram that logic control circuit is connect with wordline.Fig. 8 is
The structural schematic diagram of structure as shown in Figure 7 irising out part A and being splitted along A3-A3 line, the direction the x section view of corresponding L shape short side
Figure.
In one embodiment, multiple (two or more numbers) word line cells can (direction x) successively along a first direction
It connects and is in step-like distribution, i.e., (direction x) includes multiple word line cells along a first direction, previous in multiple word line cells
The wordline exit end of word line cell and the wordline exit head end of the latter word line cell are in step-like distribution, such as Fig. 1 institute
Four word line cells along x directional spreding of signal, wherein the connection relationship of two neighboring word line cell is as shown in Figure 2.
It in the present embodiment, is illustrated by taking word line cell pair as an example, as shown in Figure 1-Figure 3, along a first direction comprising extremely
Few two pairs of word line cells, are irised out as shown in figure 1 shown in the A of region, the previous word line cell pair of two adjacent L shape word line cells pair
The wordline exit head end of wordline exit end and the latter word line cell pair is in step-like distribution.In each L shape wordline list
To inside, two pairs of word line cells are separated by grid line gap and are in dislocation mirror image distribution, dislocation one step of difference member
Height.
In another embodiment, multiple word line cells can also be laminated and along second along third direction (direction z)
Direction (direction y) is in step-like distribution, the word line cell and such as Fig. 6 along the stacking of two, the direction z that (a) is illustrated in Fig. 6
In (b) illustrated in the form of step-like distribution, i.e., along third direction stacking multiple word line cells along second direction
(direction y) successively protrudes outward, and forms the lamination of multiple word line cells of step-like distribution, here outwardly projecting direction reference
The negative direction of the y-axis that (b) is illustrated in Fig. 6, the difference in height h of step are the height of a lamination pair, in the present embodiment, a lamination
Pair height be silica/silicon nitride stack pair height.Certainly, corresponding multiple word line cells pair, the z-axis lamination the case where with
Two word line cell modes stacked on top of one another are similar, and which is not described herein again.The difference of word line cell pair is, in each wordline list
It is necessary to have following layouts to inside for member: two pairs of word line cells are separated by grid line gap and are in dislocation mirror image distribution,
The height of dislocation one step of difference.
Certainly, in other embodiments, it can also be the combination of above two distribution form, i.e., multiple word line cells can be with
It is laminated along third direction, along multiple word line cells of third direction stacking along second direction (direction y) successively to evagination
Out, and in a first direction multiple word line cells are sequentially connected and in step-like distribution.
Referring to shown in Fig. 7 and Fig. 8, in the present embodiment, the connecting hole 4 that wordline exit is used to connect logic control circuit is welded
It is greater than short side region inner metal layer that point, which is located at the distance in short side region surface metal layer 221 apart from grid line gap 3,
The position of 222 length.
In the present embodiment, referring to shown in Fig. 2-Fig. 5, the step-like word line structure of L shape further include: protective layer 11 is covered in
Between multiple L shape word line cells 1 and its 1 top of each word line cell, 11 upper surface of protective layer is run through in grid line gap 3.
In conclusion passing through the replacement metal based on grid line gap setting L shape short side step end surface layer in the present embodiment
The size in region (direction x) in a first direction than internal replacement metallic region is big, so as to be hung down based on the positioning of grid line gap
Directly in the position of the connecting hole of plane (SSCT), set SSCT to be greater than L shape short side step terminus inner in a first direction
Replacement metallic region size position, thus when SSCT is connect with the replacement metallic region on L shape short side step end surface layer,
Corresponding is below multiple laminations pair in laminated construction, for example, multiple silica/silicon nitride stacks pair, then realizing every
All it is insulating layer below the metal layer of a connection (contact) drop point, is ensured with this in the case where etching selection ratio is not high enough,
Even if etching is excessively, also there is a phenomenon where wordline short circuits.
Second embodiment
In second exemplary embodiment of the disclosure, a kind of production method of step-like word line structure of L shape is provided.
The present embodiment carries out example how to make the step-like word line structure of the L shape in one embodiment.
Fig. 9 is the production method flow chart of the step-like word line structure of L shape according to shown in one embodiment of the disclosure.
Referring to shown in Fig. 9, the production method of the step-like word line structure of L shape of the present embodiment, comprising:
Step S201: one step-like laminated construction of production, the laminated construction include it is multiple be formed by insulating materials it is folded
Layer is right, and each lamination is to as a step；
In an embodiment of the disclosure, the step-like laminated construction 12 is along a first direction and/or second direction
It protrudes outward.
The meaning of " A and/or B " is only comprising A or only comprising B or simultaneously comprising A and B.
In the present embodiment, lamination includes multiple laminations pair being formed by insulating materials to 12, and each lamination is to including first
Laminated material 121 and the second laminated material 122, for example, the first laminated material 121 is silica, the second laminated material 122 is nitrogen
SiClx.
Step S202: multiple regions are divided into the laminated construction, the laminated construction in each region is used to form a L
Shape word line cell；
In the present embodiment, L shape long side is connect for connecting the area core (core), L shape short side as what is connected to the control circuit
The design needs of contravention/solder joint (pad), the area core and the end SS (step-like wordline exit, corresponding short side) circuit pass through top
The selection of selection grid (select gate) divides region (block).
Step S203: handling the surface layer step end of the laminated construction in each region, so that along a first direction,
The etch rate of surface layer step end is higher than the etch rate for the structure being disposed below；
In some embodiments of the present disclosure, when the lamination clock synchronization of lamination packs silicon oxide-containing and silicon nitride, to each
The mode that the surface layer step end of the laminated construction in region is handled are as follows: improved by way of ion implanting or selection deposition
Nitrogen concentration in the silicon nitride of surface layer step end.
Certainly, formed different etching rate form there are many, in the present embodiment using wet etching by the way of simultaneously
With the use of the form for changing ion concentration, in other embodiments, other control methods can also be used, it is any to can be realized
The mode of etch rate differentiation is within the protection scope of the disclosure.
Step S204: to treated, laminated construction is performed etching to form a grid line gap, and the grid line gap is along
Surface of the depth direction of the extension of two directions and etching perpendicular to laminated construction；
Grid line gap 3 is formed between adjacent subregion or on the middle line of the same subregion to form word line cell pair,
Two pairs of word line cells 1 are separated by grid line gap 3 and in dislocation mirror image distributions.The side in grid line gap is (such as in Fig. 2
Left side) other step layers tangent with the surface layer step of one of laminated construction and that run through lower section, as depicted in figs. 1 and 2.
Step S205: based on the grid line gap for each lamination centering one of lamination close to grid line gap
Region, which performs etching, to be emptied；
Along a first direction, since surface layer step end is by handling, the etch rate of surface layer step end is higher than
The etch rate for the structure being disposed below, then based on grid line gap 3 to one of lamination of each lamination centering (such as
For the lamination comprising the second laminated material 122) perform etching and empty after, one of lamination in the step of surface layer is etched away
The corresponding size in region be greater than the corresponding size in region that is etched away of structure, that is, the L shape short side being subsequently formed immediately below it
Corresponding situation；
Along second direction, the standby corresponding size in region etched away of one of lamination in the step of surface layer and its just
The region that rectangular structure is etched away is corresponding equal sized, that is, is subsequently formed the corresponding situation of L shape long side.
Step S206: in etched-off area deposited metal material, replacement metallic region is obtained, wordline exit corresponds to short side area
Field surface metal layer；To form multiple L shape word line cells, each L shape word line cell long side side extends along second direction
And one grid line gap of neighbour, short side side extends along a first direction and short side includes the wordline exit；
In the present embodiment, as shown in Figures 2 and 3, which includes the short side region surface positioned at surface
Metal layer 221 and internally positioned short side region inner metal layer 222, in a first direction, short side region surface metal layer 221
Length be greater than the length of short side region inner metal layer 222, wordline exit corresponds to the short side region surface metal layer 221；
As shown in Figure 4 and Figure 5, the replacement metallic region 11 is also comprising the long side region surface metal layer positioned at surface
223 and internally positioned long border region inner metal layer 224, in a second direction, the length of long side region surface metal layer 223
With the equal length of long border region inner metal layer 224.
In some embodiments of the present disclosure, the step of laminated construction after etching processing is to form a grid line gap
Before S204, further includes: the step of forming protective layer；In the embodiment, step S203 is first carried out, to the lamination to each region
After the surface layer step end of structure is handled, in order to during subsequent step S204 performs etching production grid line gap
It forms exposure mask or plays the role of protecting surface, be initially formed protective layer 11, the technique for being then based on dry method or wet etching
Grid line gap 3 is made in laminated construction 12.
In some embodiments of the present disclosure, after the step S206 for obtaining replacement metallic region further include: formed and used
In the step of connecting connecting hole 4 of logic control circuit, as shown in Figure 7 and Figure 8, which runs through protective layer and and wordline
The connecting hole bond pad locations of exit are corresponding and connect, which is located in short side region surface metal layer apart from grid line
The distance in gap is the position greater than the short side region inner metal layer length.
The production method of the present embodiment further includes that other general procedures or execution sequence can be changed；Certainly,
The production method of the step-like word line structure of L shape of the disclosure is not limited to shown in the present embodiment, any L for being capable of forming the disclosure
The technique of each component part of the step-like word line structure of shape and corresponding positional relationship the protection scope of the disclosure it
It is interior.
3rd embodiment
In the third exemplary embodiment of the disclosure, a kind of three-dimensional storage is provided, is referred to comprising the disclosure
Any step-like word line structure of L shape.
In the present embodiment, which includes: the step-like word line structure of L shape and logic control circuit, the logic
Control circuit passes through the connecting hole on the wordline exit in each word line cell 1 in connecting hole 4 and the step-like word line structure of L shape
Bond pad locations are corresponding and connect, and the distance which is located in short side region surface metal layer apart from grid line gap is big
In the position of the short side region inner metal layer length.Due to being insulating layer below connecting hole solder joint, it is being attached
When the etching contact of hole, it can be ensured that in the case where etching selection ratio is not high enough, even if wordline short circuit excessively, does not occur yet for etching
The phenomenon that.
In conclusion leading to present disclose provides a kind of step-like word line structure of L shape and preparation method thereof and three-dimensional storage
The replacement metallic region based on grid line gap setting L shape short side step end surface layer is crossed than internal replacement metallic region first
The size in direction (direction x) is big, will so as to the position based on the positioning of grid line gap perpendicular to the connecting hole (SSCT) of plane
SSCT is set as in a first direction greater than the position of the replacement metallic region size of L shape short side step terminus inner, to work as
When SSCT is connect with the replacement metallic region on L shape short side step end surface layer, corresponding be multiple folded in laminated construction below
Right, for example, multiple silica/silicon nitride stacks pair of layer, then realizing under each metal layer for connecting (contact) drop point
Side is all insulating layer, is ensured with this in the case where etching selection ratio is not high enough, even if wordline short circuit excessively, does not occur yet for etching
The phenomenon that.
Through attached drawing, identical element is indicated by same or similar appended drawing reference.It may cause to the disclosure
When understanding causes to obscure, conventional structure or construction will be omitted.And the shape and size of each component do not reflect actual size in figure
And ratio, and only illustrate the content of the embodiment of the present disclosure.It, should not will be between parentheses any in addition, in the claims
Reference symbol is configured to limitations on claims.
The word of ordinal number such as " first ", " second ", " third " etc. used in specification and claim, with modification
Corresponding element, itself is not meant to that the element has any ordinal number, does not also represent the suitable of a certain element and another element
Sequence in sequence or manufacturing method, the use of those ordinal numbers are only used to enable an element and another tool with certain name
Clear differentiation can be made by having the element of identical name.
Furthermore word "comprising" or " comprising " do not exclude the presence of element or step not listed in the claims.Positioned at member
Word "a" or "an" before part does not exclude the presence of multiple such elements.
Unless there are technology barrier or contradiction, each feature in above embodiment of the invention can be freely combined with
Other embodiment is formed, these other embodiments are within the protection scope of the present invention.
Particular embodiments described above has carried out further in detail the purpose of the disclosure, technical scheme and beneficial effects
Describe in detail it is bright, it is all it should be understood that be not limited to the disclosure the foregoing is merely the specific embodiment of the disclosure
Within the spirit and principle of the disclosure, any modification, equivalent substitution, improvement and etc. done should be included in the guarantor of the disclosure
Within the scope of shield.
Claims (10)
1. a kind of step-like word line structure of L shape characterized by comprising
Multiple L shape word line cells, each L shape word line cell long side side extends along second direction (direction y) and one grid of neighbour
Linear slit gap, (direction x) extension and short side include a wordline exit along a first direction for short side side；
Wherein, the wordline exit is formed in a step-like laminated construction, which includes multiple by insulating materials
The lamination pair of formation is used as replacement metal close to the region in grid line gap by one of lamination in each lamination pair
Area, the replacement metallic region include the short side region surface metal layer and internally positioned short side region interior metal positioned at surface
Layer, in a first direction, the length of short side region surface metal layer are greater than the length of short side region inner metal layer, the wordline
Exit corresponds to the short side region surface metal layer.
2. the step-like word line structure of L shape according to claim 1, which is characterized in that wordline exit is for connecting logic
The connecting hole solder joint of control circuit, the distance in short side region surface metal layer apart from grid line gap are greater than the short side
The position of region inner metal layer length.
3. the step-like word line structure of L shape according to claim 1, which is characterized in that the replacement metallic region also includes
Long side region surface metal layer and internally positioned long border region inner metal layer positioned at surface, in a second direction, long side
The equal length of the length of region surface metal layer and long border region inner metal layer.
4. the step-like word line structure of L shape according to claim 1, which is characterized in that multiple L shape word line cells are along first
Direction is sequentially connected and is in step-like distribution.
5. the step-like word line structure of L shape according to claim 1 or 4, which is characterized in that multiple word line cells are along third
Direction is laminated and is in step-like distribution along second direction.
6. the step-like word line structure of L shape according to any one of claims 1-5, which is characterized in that the multiple L shape word
Line unit is that at least a pair of L-shaped word line cell, two pairs of L shape word line cells are separated by grid line gap and are in dislocation mirror image
Distribution, the height of dislocation one step of difference, the height of one step are equal to the height of a lamination pair, the direction of dislocation
Along third direction (direction z), third direction and first direction and second direction are vertical.
7. the step-like word line structure of L shape according to claim 1, which is characterized in that further include: protective layer is covered in more
Between a L shape word line cell and its above each word line cell, protective layer upper surface is run through in grid line gap.
8. the step-like word line structure of L shape described in any one of -7 according to claim 1, which is characterized in that the L shape wordline list
First long side is for connecting the area core (core).
9. the production method of any step-like word line structure of L shape in a kind of such as claim 1-8 characterized by comprising
A step-like laminated construction is made, which includes multiple laminations pair being formed by insulating materials, each lamination
To as a step；
Multiple regions are divided into the laminated construction, the laminated construction in each region is used to form a L shape word line cell；
The surface layer step end of the laminated construction in each region is handled, so that along a first direction, surface layer step end
Etch rate be higher than the etch rate of structure being disposed below；
To treated, laminated construction is performed etching to form a grid line gap, which extends and carve along second direction
Surface of the depth direction of erosion perpendicular to laminated construction；
It is performed etching based on one of lamination of the grid line gap for each lamination centering close to the region in grid line gap
It empties, along a first direction, the corresponding size in region that one of lamination in the step of surface layer is etched away is being greater than it just
The corresponding size in the region that rectangular structure is etched away；
In etched-off area deposited metal material, replacement metallic region is obtained, which includes the short side positioned at surface
Region surface metal layer and internally positioned short side region inner metal layer, in a first direction, short side region surface metal layer
Length be greater than the length of short side region inner metal layer, wordline exit corresponds to the short side region surface metal layer；
To form multiple L shape word line cells, each L shape word line cell long side side extends along second direction and one grid of neighbour
Linear slit gap, short side side extends along a first direction and short side includes the wordline exit；
Optionally, when the lamination clock synchronization of lamination packs silicon oxide-containing and silicon nitride, to the surface layer of the laminated construction in each region
The mode that step end is handled are as follows: the silicon nitride of surface layer step end is improved by way of ion implanting or selection deposition
In nitrogen concentration；
Optionally, to treated laminated construction performs etching to form a grid line gap the step of before, further includes: formed
The step of protective layer；
Optionally, after the step of obtaining replacement metallic region further include: form the connection for connecting logic control circuit
The step of hole, the connecting hole is through protective layer and corresponding with the connecting hole bond pad locations of wordline exit and connect, the connecting hole
It is long greater than short side region inner metal layer that solder joint, which is located at the distance in short side region surface metal layer apart from grid line gap,
The position of degree；
Optionally, the step-like laminated construction is along a first direction and/or second direction protrudes outward；
Optionally, the replacement metallic region also includes long side region surface metal layer and the internally positioned long side positioned at surface
Region inner metal layer, in a second direction, the length of the length of long side region surface metal layer and long border region inner metal layer
It spends equal.
10. a kind of three-dimensional storage, which is characterized in that include the step-like wordline knot of L shape of any of claims 1-8
Structure.
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