CN110349985A - The method of imaging sensor and manufacture imaging sensor - Google Patents
The method of imaging sensor and manufacture imaging sensor Download PDFInfo
- Publication number
- CN110349985A CN110349985A CN201910150495.9A CN201910150495A CN110349985A CN 110349985 A CN110349985 A CN 110349985A CN 201910150495 A CN201910150495 A CN 201910150495A CN 110349985 A CN110349985 A CN 110349985A
- Authority
- CN
- China
- Prior art keywords
- layer
- barrier layer
- imaging sensor
- lens element
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 230000004888 barrier function Effects 0.000 claims abstract description 163
- 210000004276 hyalin Anatomy 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims description 39
- 229920001169 thermoplastic Polymers 0.000 claims description 30
- 229920000642 polymer Polymers 0.000 claims description 22
- 229920002120 photoresistant polymer Polymers 0.000 claims description 20
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
- 125000006850 spacer group Chemical group 0.000 claims description 13
- 230000000007 visual effect Effects 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 230000002209 hydrophobic effect Effects 0.000 claims description 5
- 238000012546 transfer Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000011159 matrix material Substances 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 3
- 239000012780 transparent material Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 296
- 238000013461 design Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000009102 absorption Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000001218 confocal laser scanning microscopy Methods 0.000 description 3
- 238000000399 optical microscopy Methods 0.000 description 3
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003252 repetitive effect Effects 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 210000003644 lens cell Anatomy 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
- G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
Abstract
The method of a kind of imaging sensor and manufacture imaging sensor is provided.Imaging sensor includes: barrier layer, including absorbed layer and hyaline layer；Lens element is located at below barrier layer；Sensing element is arranged to towards lens element.
Description
This application claims be submitted to the 10-2018-0039290 South Korea of Korean Intellectual Property Office on April 4th, 2018
Patent application and the 10-2018-0074099 Korean Patent Shen of Korean Intellectual Property Office is submitted on June 27th, 2018
The entire disclosure of equity please, the South Korea patent application is included herein by reference for all purposes.
Technical field
Following description is related to the method for a kind of imaging sensor and manufacture imaging sensor.
Background technique
Imaging sensor is configured as capturing the device of the image of object, and can be by the image information including object
Optical signal is converted to electric signal.Imaging sensor is included in various electronic devices.For example, such as charge-coupled device
(CCD) imaging sensor of imaging sensor and complementary metal oxide semiconductor (CMOS) imaging sensor is widely used.
Cmos image sensor includes multiple pixels comprising multiple transistors and photoelectric conversion device.It can be by multiple crystal
Pipe is handled and is exported by the signal of photoelectric conversion device photoelectric conversion, and can be based on the picture element signal generation figure exported from pixel
As data.Each pixel in multiple pixels can light or color in photoelectric conversion wave-length coverage, to generate and output signal.
Summary of the invention
The content of present invention is provided and introduces the design further described in the following specific embodiments in simplified form
Selection.The content of present invention is both not intended to identify the key features or essential features of theme claimed, is also not intended to be used for
Assist in the range of claimed theme.
In a general aspect, a kind of imaging sensor is provided, comprising: barrier layer, including absorbed layer and hyaline layer stop
Layer is configured as the opening portion by being formed in absorbed layer and hyaline layer come transmitted light；Lens element is configured as passing light
It is sent to sensing element.
Sensing element can be spaced apart with lens element, and sensing element is configured as receiving across opening portion and lens element
Light.
Lens element can be configured to refraction light and form focus on sensing element.
It barrier layer can be with the focal length of sensing element interval lens element.
Imaging sensor can include: transparent substrates are configured as transmitted light.
Opening portion can be located in barrier layer, to correspond to the arrangement of lens element.
Imaging sensor can include: spacer is configured as keeping the interval between barrier layer and sensing element.
Absorbed layer and hyaline layer are alternately arranged in barrier layer.
Absorbed layer may include the round iris opening centered on point corresponding with lens element.
Absorbed layer may include the iris opening with first diameter centered on point corresponding with lens element, barrier layer
It may include another absorbed layer, wherein another absorbed layer includes another rainbow with the second diameter different from first diameter
Film opening.
The diameter of opening portion can be gradually changed from a surface on barrier layer to another surface.
Hyaline layer can be configured to transmit the light in a wave band.
Barrier layer can have the height based on visual field (FOV).
The quantity for the absorbed layer being stacked in barrier layer can be determined based on visual field (FOV).
The focal length that the diameter of opening portion can be determined based on the amount of light, barrier layer and sensing element interval based on the amount of light.
Hyaline layer may include the transparent polymer for being configured as transmitted light.
Absorbed layer may include being configured as light absorbing black-matrix material.
Barrier layer may include multiple absorbed layers, the round iris being formed in each absorbed layer in the multiple absorbed layer
Opening can have a diameter determined based on following item: visual field (FOV), true by hyaline layer and arrangement transparent substrates over the barrier layer
Fixed refractive index.
Lens element and sensing element can arrange that absorbed layer may include based on planar array pattern with planar array pattern
The iris of arrangement is open.
Transparent substrates may be arranged on first side on barrier layer, and lens element may be arranged at the opposite with the first side of barrier layer
Second side on.
In another general aspect, provide a kind of method for manufacturing imaging sensor, which comprises transparent base is set
Bottom；Barrier layer including absorbed layer and hyaline layer is set；Lens cells are arranged in pattern based on the opening portion being formed in barrier layer
Part.
In another general aspect, a method of manufacture imaging sensor, which comprises be arranged on a transparent substrate
Barrier layer including absorbed layer and hyaline layer；Lens element corresponding with the pattern for the opening portion being formed in barrier layer is set.
The step of barrier layer is set can include: coat transparent substrates using Opacifying polymers；In Opacifying polymers
Setting has figuratum mask on part；Emit ultraviolet (UV) line to the Opacifying polymers by mask pattern exposure；Removal
The part for being covered with mask of Opacifying polymers；On remaining Opacifying polymers and remaining Opacifying polymers it
Between coat hyaline layer, hyaline layer may include the hyaline layer of negative photoresist；Hyaline layer is exposed to ultraviolet light.
The method can include: increased between hyaline layer and remaining Opacifying polymers by executing hydrophilic treated
In conjunction with.
Mask may include the circular masks with lattice.
Coating may include negative photoresist.
The step of lens element is set can include: coat thermoplastic polymer layer, thermoplastic polymer layer over the barrier layer
It may include positive photoresist；To have figuratum mask to be arranged in a part of thermoplastic polymer layer；Pass through mask
Pattern thermoplastic polymer layer is exposed to ultraviolet (UV) line；By developer to the thermoplastic polymer for being exposed to ultraviolet light
Layer is dissolved；Hydrophobic coating is applied on patterned thermoplastic polymer layer；To the thermoplastic polymer layer of coating into
Row heating is to form spherical lens.
Thermoplastic polymer layer may include by heating plastic transparent material.
In another general aspect, a kind of imaging sensor is provided, comprising: barrier layer, including being alternately stacked suction together
Receive layer and hyaline layer；Opening portion is formed in absorbed layer and hyaline layer, to transfer light to lens element；Sensing element, and it is saturating
Mirror element is spaced apart, and is configured as receiving the light from lens element.
The diameter of opening portion can gradually change between two apparent surfaces on barrier layer.
Opening portion may include the circular open of each absorbed layer in multiple absorbed layers, and the diameter of circular open is based on visual field
(FOV) and by the transparent substrates of hyaline layer and arrangement over the barrier layer the refractive index determined.
Imaging sensor can include: spacer, the outer boundary positioned at barrier layer and sensing element, the spacer are configured
For the interval of the focal length for the lens element being kept substantially equal between barrier layer and sensing element.
From following specific embodiment, drawings and claims, other features and aspect be will be apparent.
Detailed description of the invention
Fig. 1 shows the example of the configuration of imaging sensor.
Fig. 2 shows the examples on barrier layer and lens element.
Fig. 3 shows the example of the cross section of barrier layer and lens element.
Fig. 4 shows the example of the visual field (FOV) of imaging sensor.
Fig. 5 shows the example of the FOV determined by the opening portion (aperture) on barrier layer.
Fig. 6 shows another example of the FOV determined by the opening portion on barrier layer.
Fig. 7 is the exemplary diagram for showing the method for manufacture imaging sensor.
Fig. 8 shows the example on setting barrier layer.
Fig. 9 shows the example of the method for setting lens element.
Figure 10, which is shown, captures the surface that lens element is integrated in barrier layer by using electron scanning electron microscope
On structure and the example of image that obtains.
Figure 11, which is shown, captures the structure that lens element is integrated on a surface on barrier layer by using optical microscopy
And the example of the image obtained.
Figure 12 shows the example of the transmissivity of the light based on the quantity for including absorbed layer in barrier layer.
Figure 13 shows upper surface and side by using confocal laser scanning microscopy capture imaging sensor and obtains
Image example.
Figure 14 shows the example of the intensity distribution of imaging sensor.
Figure 15 shows the example of the image obtained by imaging sensor.
Figure 16 shows the example by the FOV for the measuring imaging sensor result obtained.
Figure 17 and Figure 18 shows the example of influence of the barrier layer to modulation transfer function (MTF).
Through the drawings and specific embodiments, unless otherwise described or provide, otherwise identical attached drawing reference label will be by
It is understood to mean that identical element, feature and structure.Attached drawing may not be drawn to scale, and for clear, explanation and conveniently, attached
The relative size, ratio of element and description can be exaggerated in figure.
Specific embodiment
Following detailed description is provided with help reader obtain to method described herein, equipment and/or system it is comprehensive
Understand.However, after understanding disclosure herein, method described herein, the various changes of equipment and/or system, modification
It will be apparent with equivalent.For example, the sequence of operation described herein is only example, and the sequence operated is not limited to herein
The sequence of elaboration, but other than the operation in addition to that must occur in particular order, it can be such as after understanding disclosure herein
To clearly it change.In addition, to be more clear and concise, the description of feature known in the art can be omitted.
Feature described herein can be realized in different forms, and should not be construed as limited to described herein show
Example.On the contrary, provide example described herein, it is only used for showing and realizes that method described herein, many of equipment and/or system can
Some modes in energy mode, this will be apparent after understanding disclosure herein.
Hereinafter, it will be described in detail with reference to the accompanying drawings example.However, the range of right is not understood as limited to explain herein
The example stated.Example can be carry out various modifications.Here, example is not construed as limited to the disclosure, and should be understood to wrap
Include all changes, equivalent and the substitute in the design and technical scope of the disclosure.
Term as used herein is only used for the purpose of description particular example, is not intended to limit.As used in this, it removes
Non- context clearly dictates otherwise, and otherwise singular is also intended to include plural form.As used in this, term " and/
Or " it include any combination of any two or more in any one or associated institute's list in associated institute's list.
Although the term of " first " or " second " is for explaining various assemblies, component is not limited to the term.These
Term should be only used for distinguishing a component with another component.For example, in the model according to the right of the design of the disclosure
In enclosing, " first " component can be described as " second " component, or similarly, and " second " component can be described as " first " component.It will be understood that
When component is referred to as " being connected to " another component, which may be coupled directly to or be integrated to another component or may
There are intermediate modules.
Herein for the term "available" of example or embodiment (for example, may include about example or embodiment or what is realized
Term "available") use indicate: there is including or realize at least one example or embodiment of such feature, and all
Example and embodiment are without being limited thereto.
Reference label about the element distributed in attached drawing, it should be noted that in the case of any possible, even if they
It is shown in different attached drawings, identical element will be also denoted by the same reference numerals.In addition, in exemplary description, when recognizing
When will lead to the ambiguous interpretation of the disclosure for the detailed description to known dependency structure or function, such description will be omitted.
Fig. 1 shows the example of the configuration of imaging sensor 100.
Imaging sensor 100 is the equipment for capturing the image of object.In one example, imaging sensor 100 wraps
Include lens element 110, barrier layer 120, transparent substrates 130, sensing element 140, spacer 150 and camera chip 190.
Lens element 110 is refraction from external received optical element, and assembles light.Lens element 110 reflects light, to feel
It surveys on element 140 and forms focus.In one example, a surface of lens element 110 has protrusion, and another surface is flat
Smooth surface.In one example, lens element 110 is the lenticule with nonreentrant surface.Described illustrative show is not being departed from
In the case where the spirit and scope of example, the other shapes on the surface of the lens element 110 with protrusion are (such as, such as spherical, non-
Spherical, concavees lens or Fresnel-type shape) it can be used.
One group of lens element 110 is referred to as lens array.For example, lens array includes with planar array pattern (such as, example
Such as lattice) arrangement multiple lens elements.
Barrier layer 120 is the layer for stopping light.In one example, barrier layer 120 includes hyaline layer and formation pattern (example
Such as, sectional hole patterns) absorbed layer.In one example, barrier layer 120 includes the opening portion formed by the pattern of absorbed layer.Stop
120 opening of layer will be transmitted to lens element 110 from external received light.It is further described below with reference to Fig. 2 and Fig. 3
Example including hyaline layer and absorbed layer in barrier layer 120.
Transparent substrates 130 are configured as the transparent substrates of transmitted light.In one example, transparent substrates 130 are arranged in
On barrier layer 120.However, the arrangement of transparent substrates 130 is without being limited thereto, transparent substrates 130 are also arranged in positioned at barrier layer 120
On lens element 110 on.In one example, transparent substrates 130 include chip glass, however, the type of transparent substrates 130
It is without being limited thereto.In the case where not departing from the spirit and scope of described illustrated examples, can be used other kinds of transparent
Substrate 130.
In one example, sensing element 140 is spaced apart with lens element 110, and receives the opening across barrier layer 120
The light in portion and lens element 110.Sensing element 140 receives after the opening portion that light passes through transparent substrates 130 and barrier layer 120
The light assembled by lens element 110.The signal of the intensity for the light that the output instruction of sensing element 140 receives.In one example,
Sensing element 140 senses light corresponding with Color Channel and exports the signal of the intensity of instruction corresponding color.Color Channel is table
Show with the channel of a part of corresponding color of visibility region, and include: for example, red channel, green channel and blue are logical
Road.In one example, the individual sensing of sensing element 140 and a face in red channel, green channel and blue channel
The corresponding light in chrominance channel.The wavelength that sensing element 140 can sense is not limited to visibility region.In other examples, sensing element 140
It can be according to design sensing infrared ray or ultraviolet light.
One group of sensing element 140 is referred to as sensor array.For example, sensor array includes with planar array pattern (example
Such as, lattice) arrangement multiple sensing elements.In one example, sensor array includes the red sensing element of sensing
140, the sensing element 140 of the sensing element 140 of sensing green and sensing blue.In one example, sensor array can area
Three kinds of colors are not sensed.
Spacer 150 keeps the interval between barrier layer 120 and sensing element 140.Here, barrier layer 120 and sense are kept
The interval surveyed between element 140 is understood to be the interval holding between barrier layer 120 and sensing element 140 in predetermined value
In preset range.For example, spacer 150 supports barrier layer 120 and sensing element 140.As shown in fig. 1, in one example,
Spacer 150 is arranged along the outer boundary of sensor array, and supports the outer boundary on barrier layer 120.
Camera chip 190 is to realize the chip of sensor array.For example, camera chip 190 is realized with wafer scale.
In one example, lens element 110, barrier layer 120, transparent substrates 130, sensing element 140, spacer 150
It is combined with camera chip 190 by integrated technique.
Fig. 2 shows the examples on barrier layer 220 and lens element 210.
Barrier layer 220 includes absorbed layer 221 and hyaline layer 222.Barrier layer 220 is by being formed in absorbed layer 221 and transparent
Opening portion 229 in layer 222 is transmitted from external received light.In one example, 220 opening 229 of barrier layer will be from
External received light is supplied to lens element 210.
Absorbed layer 221 is light absorbing layer, and is known as such as " light absorbing layer " again.In one example, absorbed layer
221 include light absorbing black-matrix material.For example, black-matrix material includes black SU-8.However, the material of absorbed layer 221
Without being limited thereto, in another example, absorbed layer 221 includes light absorbing negative photoresist (negative
photoresist).In one example, absorbed layer 221 includes the cloth based on lens element 210 corresponding with lens element 210
The round iris opening (iris diaphragm) formed centered on the point set.Absorbed layer 221 includes being based on planar array pattern
It is formed and the iris of arrangement is open.
Hyaline layer 222 is the layer of transmitted light.In one example, hyaline layer 222 includes the transparent polymer of transmitted light.Example
Such as, transparent polymer includes SU-8.However, the material of hyaline layer 222 is without being limited thereto, hyaline layer 222 includes any of transmitted light
Negative photoresist.In one example, hyaline layer 222 transmits the light in a wave band.In another example, hyaline layer 222
Transmit the light in visible light wave range.
In one example, barrier layer 220 forms opening by the structure that absorbed layer 221 and hyaline layer 222 are alternately arranged
Portion 229.In one example, the arrangement lens element 210 on the surface and barrier layer 220 of the arrangement absorbed layer 221 on barrier layer 220
Surface it is opposite.However, the arrangement of absorbed layer 221 is without being limited thereto, absorbed layer 221 and lens element 210 are located on same surface.
Round iris opening is formed in absorbed layer 221 with lattice.For example, when barrier layer 220 includes multiple absorptions
When layer, the iris of multiple absorbed layers is open to form opening portion 229.Opening portion 229 is the part that the light on barrier layer 220 passes through.Base
The arrangement of lens element 210 in barrier layer 220 forms opening portion 229.Opening portion is further described below with reference to Fig. 3
229。
The light being received externally is transmitted to sensing element by lens element 210.In one example, lens element 210
Positioned at 220 lower section of barrier layer, and it is transmitted through the light of the offer of opening portion 229.In one example, protrusion is formed in lens element
On 210 surface, protrusion is arranged such that protrusion towards sensing element.For example, lens element 210 is by opening
229 light provided are transmitted to sensing element corresponding with opening portion 229.However, above structure is only example, and example is unlimited
In this.In another example, lens element 210 is located at 220 top of barrier layer, rather than is located at 220 lower section of barrier layer, Huo Zhetou
Mirror element 210 is located above and below barrier layer 220.In another example, the flat of lens element 210 rather than it is prominent
It rises and is arranged to towards sensing element.In another example, lens element 210 has the recess portion formed on the surface rather than dashes forward
It rises.
The pattern (for example, sectional hole patterns) being formed in barrier layer 220 allows the opening portion 229 in barrier layer 220
Light is sent to sensing element corresponding with opening portion 229, and prevents light from propagating towards another sensing element.Therefore, there is figure
The barrier layer 220 of case reduces optical crosstalk.In addition, for example, being designed based on the height on the diameter of sectional hole patterns or barrier layer 220
The wide visual field (FOV) of imaging sensor.
Fig. 3 shows the example of the cross section of barrier layer 320 and lens element 310.
Imaging sensor includes the barrier layer of the lens element 310 and formation opening portion 329 positioned at 320 lower section of barrier layer
320.As shown in Figure 3, the structure that there is absorbed layer 321 and hyaline layer 322 to be alternately stacked on barrier layer 320.Individual absorbed layer
321 include round iris opening, and round iris opening is filled using material identical with the material of hyaline layer 322.
In absorbed layer 321, the region transmitted light of iris opening is formed, and other regions of not formed iris opening absorb
Light.The light being open across the iris of any absorbed layer 321 passes through next hyaline layer 322.Light across next hyaline layer 322 passes through
The iris of next absorbed layer is open.Therefore, the iris of each absorbed layer in multiple absorbed layers is open to be formed with cylindrical shape
And transmit opening portion 329 from external received light.
Light across opening portion 329 is provided to lens element 310.Lens element 310 assembles the light across opening portion 329
And transfer light to sensing element.
Fig. 4 shows the example of the FOV of imaging sensor.
Barrier layer 420 has the height H determined based on FOV.For example, the FOV of imaging sensor is indicated from external received
Light reaches the maximum angle θ incident relative to transparent substrates 430 of sensing element1.The light for being incident on transparent substrates 430 is based on thoroughly
Refractive index in each of bright substrate 430 and hyaline layer 422 is refracted.For example, in fig. 4, it is assumed that light is with angle, θ1It is incident on
Transparent substrates 430.Because light is blocked the absorption of the absorbed layer 421 in layer 420, opening portion is allowed light through across barrier layer
420 maximum angle θ2It is determined.For example, allowing to pass through the maximum angle θ on barrier layer 420 from external received light2Based on formation
The height of opening portion in barrier layer 420 and diameter determine.The height of opening portion corresponds to the height H on barrier layer 420.
In one example, the angle, θ in imaging sensor is shown in following table 11And angle, θ2With barrier layer 420
Height H between relationship.
[table 1]
| H(μm) | θ2(°) | θ1(°) |
| 120 | 22.61 | 33.92 |
| 110 | 24.44 | 36.66 |
| 100 | 26.56 | 39.84 |
| 90 | 29.054 | 43.58 |
| 80 | 32.00 | 48.00 |
| 70 | 35.53 | 53.30 |
| 60 | 39.80 | 59.70 |
| 50 | 45 | 67.5 |
| 40 | 51.340 | 77.01 |
| 30 | 59.036 | 88.55 |
| 20 | 68.198 | 77.7 |
In table 1, when the height H when barrier layer 420 is 110 μm, the FOV of imaging sensor is about 70 °.
However, the configuration on barrier layer 420 is not limited to above description.The absorption being stacked in barrier layer 420 is determined based on FOV
The quantity of layer 421.For example, determining the height on barrier layer 420 based on FOV, and based on the interval and barrier layer between absorbed layer 421
420 height determines the quantity of the absorbed layer 421 stacked.Interval between absorbed layer 421 corresponds to the thickness of hyaline layer 422.
Fig. 5 shows the example of the FOV determined by the opening portion on barrier layer.
In one example, barrier layer 520 include absorbed layer 521, wherein absorbed layer 521 include with lens element 510
The iris opening with first diameter D1 formed centered on corresponding point.Barrier layer 520 includes comprising having and first diameter
The second absorbed layer (that is, absorbed layer 522) of the iris opening of D1 different second diameter D2.Barrier layer 520 includes comprising having
The third absorbed layer (that is, absorbed layer 523) of the iris opening of the third diameter D3 different from second diameter D2.In an example
In, first diameter D1, second diameter D2 and third diameter D3, which have, to be gradually increased or reduced value.For example, barrier layer 520 has
Such structure: the diameter of opening portion 529 is gradually changed from another surface on a surface to the barrier layer 520 on barrier layer 520.
The quantity of absorbed layer in barrier layer 520 is non-detailed example, in the spirit and model for not departing from described illustrated examples
In the case where enclosing, the absorbed layer of other quantity can be used.
The example of the constant diameter of opening portion is shown, Fig. 5 shows the example that the diameter of opening portion 529 is gradually increased in Fig. 4.
Referring to Fig. 5, the diameter of the iris opening in absorbed layer is formed in from the absorbed layer close to lens element 510 to far from lens element
510 absorbed layer is gradually increased.When the diameter of opening portion 529 is gradually increased, opening portion 529 is allowed light through across barrier layer
520 maximum angle θ2Increase.In this illustration, FOV θ based on expectations1, the refractive index of transparent substrates 530 and multiple transparent
Layer in each hyaline layer refractive index come determine opening portion 529 diameter increase degree.Based on being incident on transparent substrates 530
And with desired FOV θ1The light of refraction be incident on the angle on barrier layer 520 determine opening portion 529 diameter increase degree.
The degree that the diameter of opening portion 529 increases corresponds to the maximum angle θ for allowing light to pass through barrier layer 5202.Therefore, it is formed in resistance
Round iris opening in each absorbed layer in multiple absorbed layers in barrier 520 has FOV θ based on expectations1And by
The diameter that the refractive index of each determination in hyaline layer and transparent substrates 530 determines.
In one example, barrier layer 520 and sensing element 540 are spaced the focal length of lens element 510.For example, as in Fig. 5
Shown, barrier layer 520 is based on lens element 510 and is arranged to towards sensing element 540.However, the arrangement on barrier layer 520 is not
It is limited to this, barrier layer 520 is based on lens element 510 and is disposed on side identical with sensing element 540.
For example, opening portion has the diameter that the amount based on light determines, barrier layer 520 and the interval of sensing element 540 are based on light
Amount determine focal length.
The example being gradually increased referring to Fig. 5 diameter for describing opening portion 529, describes opening portion referring to Fig. 6
The example that is gradually reduced of diameter.
Fig. 6 shows another example of the FOV determined by the opening portion on barrier layer.
Barrier layer 620 includes: the first absorbed layer being open comprising the iris with first diameter D1 based on lens element 610
621, the second absorbed layer 622 comprising the iris opening with second diameter D2, and include the iris with third diameter D3
The third absorbed layer 623 of opening.First diameter D1, second diameter D2 and third diameter D3 have the value being gradually reduced.For example, resistance
Barrier 620 has such a structure that the diameter of opening portion 629 from a surface on barrier layer 620 to another table on barrier layer 620
Face is gradually reduced.Therefore, it is based on above structure, imaging sensor allows the object of distant place observed greatlyyer.
Fig. 7 is the exemplary diagram for showing the method for manufacture imaging sensor.It can be executed in the order shown with mode
Operation in Fig. 7, but in the case where not departing from the spirit and scope of described illustrated examples, some operations can be changed
Sequence or omit some operations.Many operations shown in fig. 7 can be performed in parallel or concurrently.One or more boxes of Fig. 7
And the combination of box can be by executing the computer based on specialized hardware or specialized hardware and computer instruction of specific function
Combination realize.Other than the description of following FIG. 7, the description of Fig. 1 to Fig. 6 is also applied for Fig. 7, and is incorporated herein by reference
This.Therefore, above description can not be repeated here.
In one example, transparent substrates, barrier layer, lens element and sensing element are stacked by sequence to form image
Sensor.
Referring to Fig. 7, in operation 710, transparent substrates are set.Transparent substrates are chip glasses as described above, however, showing
Example is without being limited thereto.
In operation 720, setting includes the barrier layer of absorbed layer and hyaline layer.For example, barrier layer is arranged in transparent substrates
On.In one example, as described above, absorbed layer and hyaline layer are alternately stacked.It further describes to form resistance below with reference to Fig. 8
The example of barrier.
In operation 730, lens element is arranged based on the pattern for the opening portion being formed in barrier layer.For example, lens
Element is arranged over the barrier layer.The example for setting microlens array to lens element is further described below with reference to Fig. 9.
Fig. 8 shows the example on setting barrier layer.
Referring to Fig. 8, in operation 821, on a transparent substrate by absorbed layer setting.For example, transparent substrates are coated
(coat) there is Opacifying polymers (such as, black polymer (for example, black SU-8)) as absorbed layer.
In operation 822, by mask alignment on absorbed layer.In one example, mask is with planar array pattern arrangement
On absorbed layer.For example, arranging circular masks based on lattice.The mask being aligned on absorbed layer emits ultraviolet (UV) line.
The part other than mask of absorbed layer is exposed to ultraviolet light.Absorbed layer includes negative photoresist.Photoresist is
The light-sensitive material used in various techniques, and patterned coating is formed on the surface.
In operation 823, developed by developer (developer) to by the patterned absorbed layer of UV exposure.
In one example, the solvent for being referred to as " developer " is applied on surface.Negative photoresist is exposed to ultraviolet light
It is partially insoluble in developer.It is dissolved by development of photoresist agent the part for being not exposed to ultraviolet light of negative photoresist.
Therefore, as shown in Figure 8, the part corresponding with the shape of mask of absorbed layer is dissolved and removes.
In operation 824, patterned absorbed layer is coated using hyaline layer.Patterned absorbed layer is coated in hyaline layer
In the case where upper, barrier layer is exposed to ultraviolet light.Hyaline layer further includes negative photoresist, and hyaline layer is exposed to ultraviolet light
Be partially insoluble in developer.Because all parts of hyaline layer are exposed to ultraviolet light in the case where no mask, thoroughly
Bright layer is fixed.In one example, on remaining (or not dissolved) Opacifying polymers and it is remaining (or not
It is dissolved) between Opacifying polymers coating include the hyaline layer of negative photoresist.
In operation 825, hydrophilic treated is applied to hyaline layer.By hydrophilic treated, between hyaline layer and absorbed layer
Binding force increases.For example, hydrophilic treated is oxygen plasma treatment.
In operation 826, multiple layers (for example, " N " a layer) is stacked to operation 825 by repetitive operation 821." N " is
More than or equal to the integer of " 2 ".Absorbed layer and hyaline layer are alternately stacked.In repetitive operation 821 to while operating 825, for
The alignment between pattern that absorbed layer is formed is kept.Therefore, correspond to opening for one group of iris opening that absorbed layer is formed
Portion.
Fig. 9 shows the example of setting lens element.
Referring to Fig. 9, in operation 931, over the barrier layer by thermoplastic polymer (or thermoplastic polymer layer) setting.Heat
Thermoplastic polymer is the transparent material for manufacturing lens, and is by heating plastic material.For example, thermoplasticity polymerize
Object is AZ9260.
In operation 932, the mask arranged with the pattern about planar array pattern being formed on absorbed layer is arranged
On thermoplastic polymer.In mask-placement on thermoplastic polymer, thermoplastic polymer is exposed to ultraviolet light.
In other words, thermoplastic polymer is exposed to by ultraviolet (UV) line by the pattern of mask.
In operation 933, developed by developer to by the patterned thermoplastic polymer of UV exposure.For example,
Thermoplastic polymer is positive photoresist, and the part for being exposed to ultraviolet light of positive photoresist is shown by photoresist
Shadow agent dissolution.Positive photoresist be not exposed to ultraviolet light be partially insoluble in developer.Therefore, as shown in Figure 9, hot
The part corresponding with the shape of mask of thermoplastic polymer remains unchanged after UV exposure.For example, when using circular masks, heat
Thermoplastic polymer is kept in the cylindrical form based on planar array pattern.
In operation 934, hydrophobic coating 901 (for example, fluorocarbon nano thin-film coating) is applied to thermoplastic poly
It closes in the structure that object is patterned.Increase the cohesive force of thermoplastic polymer by hydrophobic coating 901.
In operation 935, microlens array is manufactured by thermal reflux.Because the cohesive force of thermoplastic polymer passes through
It operates 934 hydrophobic coating 901 and increases, so thermoplastic polymer is assembled in the form of spherical surface.
However, the example of manufacture imaging sensor is not limited to Fig. 7 to Fig. 9, and can be changed according to design.On in addition,
The operation order for each manufacturing process in multiple manufacturing process that face is described referring to Fig. 7 to Fig. 9 is not limited to above description, sequence
It can be changed.In some embodiments, it can omit or add a part of technique.
Figure 10, which is shown, captures the surface that lens element is integrated in barrier layer by using electron scanning electron microscope
On structure and the example of image that obtains.
Figure 10 shows the lens element captured by electron scanning electron microscope.In Figure 10, spherical lens elements are hindering
It is formed uniformly below barrier with lattice.
Figure 11, which is shown, captures the structure that lens element is integrated on a surface on barrier layer by using optical microscopy
And the example of the image obtained.
Figure 11 shows the lens element captured by optical microscopy.In Figure 11, the focus of lens element is formed uniformly
And it is indicated by white point.
Figure 12 shows the example of the transmissivity of the light based on the quantity for including absorbed layer in barrier layer.
Figure 12 shows instruction when including the quantity increase of absorbed layer in barrier layer, across the transmission of the light on barrier layer
The result that rate reduces.For example, passing through single layer transmission about 40% to 50% when the coating of 4.5 μm of absorbed layer is performed
Light.Pass through the light of two layer transmissions about 10%.The light in visible light region is hardly transmitted by four layers.
Figure 13 show by using confocal laser scanning microscopy capture imaging sensor upper surface (for example, by x-axis and
Y-axis formed plane) and side (for example, the plane formed by x-axis and z-axis) and acquisition image example.
The image of the Figure 13 obtained using confocal laser scanning microscopy indicates the structure (w/o MLA) of not lens array
1310, the not structure (w/o MBL) 1320 on barrier layer and the structure (w MLA+MBL) with lens array and barrier layer
1330。
In structure 1310, the path of light is not focused.In structure 1320, light is not blocked.
In structure 1330, the path of light is focused, and light is blocked in the part other than opening portion.
Figure 14 shows the example of the intensity distribution of imaging sensor.
Figure 14 show the structure 1310 of Figure 13 to structure 1330 intensity distribution comparison result.In Figure 14, dotted line w/o
MLA indicates the intensity distribution of not microlens array, and dotted line w/o MBL indicates the intensity distribution on no multiple barrier layers, solid line w
MLA+MBL indicates the intensity distribution with both microlens array and multiple barrier layers.Imaging sensor is than without barrier layer
Structure more effectively stop about 60% light.In addition, the amount of uniform light is presented in imaging sensor for focus.Uniformly
Light amount instruction lens equably manufactured.
Figure 15 shows the example of the image obtained by imaging sensor.
Original image shown in top by using image capture sensor Figure 15 can get institute in the bottom of Figure 15
The image shown.While preventing crosstalk using barrier layer, imaging sensor obtains multiple clearly segmented images.
Figure 16 shows the example by the FOV for the measuring imaging sensor result obtained.
When image capture sensor target object image, observes and fill from the length of target object image and permission user
Full object and the FOV that imaging sensor is measured by the distance of the image of image capture sensor.As shown in Figure 16, image passes
The FOV of sensor is about 70 °.
Figure 17 and Figure 18 shows the example of influence of the barrier layer to modulation transfer function (MTF).
Figure 17 is shown without the MTF measurement image of the structure 1710 on barrier layer, and structure 1720 with barrier layer
MTF measures image.The MTF measurement image of structure 1710 has relatively low clarity, however, the MTF of structure 1720 measures figure
As having relatively high clarity.As shown in Figure 18, it for the imaging sensor of the structure with barrier layer, can measure
MTF。
According to example, imaging sensor disclosed herein is installed in ultra-thin camera applications product (for example, mobile digital phase
Machine) in.In addition, imaging sensor is suitable for other imaging devices, such as, miniature optical imaging device is (for example, endoscope phase
Machine or unmanned plane).
According to example, in the image sensor, prevent optical crosstalk absorbed layer be based on lens element be arranged to towards
Sensing element, the white space between lens element and sensing element are kept by spacer.Therefore, it can be achieved that thin image sensing
Device.
According to example, imaging sensor reduces optical crosstalk using including the barrier layer of absorbed layer and hyaline layer.In addition,
The FOV of imaging sensor is adjusted during the manufacture of imaging sensor.
According to example, in the image sensor, lenticular element arrangement is on the lower surface on barrier layer.Because stopping layer arrangement
On lens element, so optical crosstalk is reduced.In addition, in the image sensor, transparent substrates are arranged over the barrier layer.Cause
It is located on barrier layer for transparent substrates, so received light is refracted, effectively to increase the FOV of imaging sensor.Based on saturating
The quantity of the absorbed layer of the thickness and stacking of bright layer adjusts FOV.In addition, the iris opening being formed in an absorbed layer is straight
It is different that diameter or width are designed to the diameter or width being open from the iris being formed in another absorbed layer, therefore FOV is determined.
According to example, imaging sensor is integrated in the semiconductor that will act as ultra-thin camera.In addition, being formed by design
The width of iris opening and the f number of lens element in the absorbed layer of each stacking in the absorbed layer of multiple stackings are adjusted
By the amount of the received light of imaging sensor.
According to example, the method for manufacturing imaging sensor makes it possible for can be realized the patterned material of UV to manufacture
Accurate imaging sensor.In addition, the method for manufacture imaging sensor can manufacture ultra-thin lens.The rainbow being formed in absorbed layer
Film opening is arranged to the diameter for having different, therefore, the FOV for receiving light is adjusted.In addition, curvature based on lens element and
The focal length of the height of spacer can change according to design.
According to example, lens element and the barrier layer of individual sensing element can be provided the light to, by designing to adjust
Imaging sensor for the FOV for including individual sensing element in sensor array.Imaging sensor uses multiple senses
It surveys element and obtains multiple segmented images.Imaging sensor obtains tool by designing barrier layer as described above come the adjusting based on FOV
There is the segmented image of the overlapping degree of adjusting.Imaging sensor enhances MTF for high-quality ultra-thin camera, or for three-dimensional
The extraction 3D depth information of (3D) camera.
Although the disclosure includes specific example, it will be clear that, do not taken off after understanding disclosure herein
In the case where from claim and the spirit and scope of their equivalent, each of form and details can be carried out in these examples
Kind changes.Example described herein is considered merely as descriptive sense, rather than the purpose for limitation.In each example
The description of features or aspect will be considered the similar features or aspects being applicable in other examples.If the technology of description is not with
Same is sequentially executed, and/or if the component in system, framework, device or the circuit described is combined in different ways
And/or by other assemblies or their equivalent replace or supplement, then suitable result can be achieved.Therefore, the scope of the present disclosure
It is not limited by specific implementation, but is defined by the claims and their equivalents, and claim and its equivalent
All changes in range are to be interpreted as including in the disclosure.
Claims (32)
1. a kind of imaging sensor, comprising:
Barrier layer, including absorbed layer and hyaline layer, barrier layer are configured as the opening by being formed in absorbed layer and hyaline layer
Portion carrys out transmitted light；
Lens element is configured as transferring light to sensing element.
2. imaging sensor according to claim 1, wherein sensing element is spaced apart with lens element, sensing element quilt
It is configured to receive the light across opening portion and lens element.
3. imaging sensor according to claim 1, wherein lens element is additionally configured to refraction light and in sensing element
Upper formation focus.
4. imaging sensor according to claim 1, wherein the focal length on barrier layer and sensing element interval lens element.
5. imaging sensor according to claim 1, further includes:
Transparent substrates are configured as transmitted light.
6. imaging sensor according to claim 1, wherein opening portion is located in barrier layer, to correspond to lens element
Arrangement.
7. imaging sensor according to claim 1, further includes:
Spacer is configured as keeping the interval between barrier layer and sensing element.
8. imaging sensor according to claim 1, wherein absorbed layer and hyaline layer are alternately arranged in barrier layer.
9. imaging sensor according to claim 1, wherein absorbed layer includes centered on point corresponding with lens element
Round iris opening.
10. imaging sensor according to claim 1, wherein
Absorbed layer includes the iris opening with first diameter centered on point corresponding with lens element,
Barrier layer further includes another absorbed layer, wherein another absorbed layer includes straight with different from first diameter second
Another iris of diameter is open.
11. imaging sensor according to claim 1, wherein the diameter of opening portion is from the surface on barrier layer to another
One surface gradually changes.
12. imaging sensor according to claim 1, wherein hyaline layer is configured to transmit the light in a wave band.
13. imaging sensor according to claim 1, wherein barrier layer has the height based on visual field.
14. imaging sensor according to claim 1, wherein determine the absorbed layer being stacked in barrier layer based on visual field
Quantity.
15. imaging sensor according to claim 1, wherein amount of the diameter of opening portion based on light, barrier layer and sensing
The focal length that element spacing is determined based on the amount of light.
16. imaging sensor according to claim 1, wherein hyaline layer includes the transparent polymeric for being configured as transmitted light
Object.
17. imaging sensor according to claim 1, wherein absorbed layer includes being configured as light absorbing black matrix"
Material.
18. imaging sensor according to claim 1, wherein barrier layer includes multiple absorbed layers, is formed in the multiple
Round iris opening in each absorbed layer in absorbed layer has a diameter determined based on following item: visual field, by hyaline layer and
The refractive index that the transparent substrates of arrangement over the barrier layer determine.
19. imaging sensor according to claim 1, wherein
Lens element and sensing element with planar array pattern arrangement,
Absorbed layer includes the iris opening based on planar array pattern arrangement.
20. imaging sensor according to claim 5, wherein transparent substrates are arranged on first side on barrier layer, lens
Element is arranged in the second side opposite with the first side on barrier layer.
21. a kind of method for manufacturing imaging sensor, which comprises
Transparent substrates are set；
Barrier layer including absorbed layer and hyaline layer is set；
Lens element is arranged in pattern based on the opening portion being formed in barrier layer.
22. a kind of method for manufacturing imaging sensor, which comprises
Setting includes the barrier layer of absorbed layer and hyaline layer on a transparent substrate；
Lens element corresponding with the pattern for the opening portion being formed in barrier layer is set.
23. according to the method for claim 22, wherein setting barrier layer the step of include:
Transparent substrates are coated using Opacifying polymers；
Setting has figuratum mask on the part of Opacifying polymers；
Emit ultraviolet light to the Opacifying polymers of the pattern exposure by mask；
Remove the part for being provided with mask of Opacifying polymers；
Coating includes negative photoresist between remaining Opacifying polymers on remaining Opacifying polymers
Hyaline layer；
Hyaline layer is exposed to ultraviolet light.
24. according to the method for claim 23, further includes: by execute hydrophilic treated come increase hyaline layer and it is remaining not
Binding force between transparent polymer.
25. according to the method for claim 23, wherein mask includes the circular masks with lattice.
26. according to the method for claim 23, wherein Opacifying polymers include negative photoresist.
27. according to the method for claim 22, wherein setting lens element the step of include:
Coating includes the thermoplastic polymer layer of positive photoresist over the barrier layer；
To have figuratum mask to be arranged on the part of thermoplastic polymer layer；
Thermoplastic polymer layer is exposed to ultraviolet light by the pattern of mask；
The thermoplastic polymer layer for being exposed to ultraviolet light is dissolved by developer；
Hydrophobic coating is applied on patterned thermoplastic polymer layer；
The thermoplastic polymer layer of coating is heated to form spherical lens.
28. according to the method for claim 27, wherein thermoplastic polymer layer includes by heating plastic transparent material
Material.
29. a kind of imaging sensor, comprising:
Barrier layer, including the absorbed layer and hyaline layer being alternately stacked；
Opening portion is formed in absorbed layer and hyaline layer, to transfer light to lens element；
Sensing element is spaced apart with lens element, and is configured as receiving the light from lens element.
30. imaging sensor according to claim 29, wherein two apparent surfaces of the diameter of opening portion on barrier layer
Between gradually change.
31. imaging sensor according to claim 29, wherein opening portion includes each absorbed layer in multiple absorbed layers
In circular open, the diameter of circular open determined based on visual field and by the transparent substrates of hyaline layer and arrangement over the barrier layer
Refractive index.
32. imaging sensor according to claim 29, further includes: spacer, positioned at the outer of barrier layer and sensing element
Boundary, the spacer are configured as being the focal length equal to lens element by the interval holding between barrier layer and sensing element.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2018-0039290 | 2018-04-04 | ||
| KR20180039290 | 2018-04-04 | ||
| KR10-2018-0074099 | 2018-06-27 | ||
| KR1020180074099A KR102614907B1 (en) | 2018-04-04 | 2018-06-27 | Image sensor and method to produce image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110349985A true CN110349985A (en) | 2019-10-18 |
Family
ID=68171832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910150495.9A Pending CN110349985A (en) | 2018-04-04 | 2019-02-28 | The method of imaging sensor and manufacture imaging sensor |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2019186544A (en) |
| KR (1) | KR102614907B1 (en) |
| CN (1) | CN110349985A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117497551A (en) * | 2023-12-25 | 2024-02-02 | 合肥晶合集成电路股份有限公司 | Image sensor and method for manufacturing the same |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11030724B2 (en) | 2018-09-13 | 2021-06-08 | Samsung Electronics Co., Ltd. | Method and apparatus for restoring image |
| KR102429987B1 (en) * | 2020-01-06 | 2022-08-05 | 엘아이지넥스원 주식회사 | Micro lens array and Image sensor module including the same and Manufacturing method thereof |
| KR102457628B1 (en) * | 2020-08-20 | 2022-10-24 | 한국과학기술원 | Lens structure and manufacturing method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060261427A1 (en) * | 2005-05-18 | 2006-11-23 | International Business Machines Corporation | Touching microlens structure for a pixel sensor and method of fabrication |
| CN1893026A (en) * | 2005-06-27 | 2007-01-10 | 东部电子有限公司 | Method for manufacturing of CMOS image sensor |
| US20080142686A1 (en) * | 2006-12-15 | 2008-06-19 | Yasutaka Konno | Solid-state imaging element, photo-detector and authentication system using the photo-detector |
| CN101436605A (en) * | 2007-11-16 | 2009-05-20 | 东部高科股份有限公司 | Image sensor and method for manufacturing thereof |
| US20100032781A1 (en) * | 2008-08-08 | 2010-02-11 | Samsung Electro-Mechanics Co., Ltd. | Camera module and method of manufacturing the same |
| CN103794615A (en) * | 2012-10-26 | 2014-05-14 | 佳能株式会社 | Solid-state imaging apparatus, method of manufacturing the same, and camera |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0645569A (en) * | 1992-05-22 | 1994-02-18 | Matsushita Electron Corp | Solid-state image pick-up device and its manufacturing method |
| DE69320113T2 (en) * | 1992-05-22 | 1999-03-11 | Matsushita Electronics Corp | Solid state image sensor and method for its production |
| JP2002368235A (en) * | 2001-03-21 | 2002-12-20 | Canon Inc | Semiconductor device and manufacturing method therefor |
| DE102006004802B4 (en) * | 2006-01-23 | 2008-09-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Image acquisition system and method for producing at least one image capture system |
| JP5076679B2 (en) * | 2007-06-28 | 2012-11-21 | ソニー株式会社 | Solid-state imaging device and camera module |
| JP5324890B2 (en) * | 2008-11-11 | 2013-10-23 | ラピスセミコンダクタ株式会社 | Camera module and manufacturing method thereof |
| WO2014042178A1 (en) * | 2012-09-11 | 2014-03-20 | コニカミノルタ株式会社 | Lens array, lens array laminate, and imaging device |
| JP2015173474A (en) * | 2015-04-30 | 2015-10-01 | セイコーエプソン株式会社 | Imaging apparatus |
| JP2018046040A (en) * | 2016-09-12 | 2018-03-22 | ソニーセミコンダクタソリューションズ株式会社 | Solid-state image pickup device, manufacturing method thereof, and electronic apparatus |
-
2018
- 2018-06-27 KR KR1020180074099A patent/KR102614907B1/en active IP Right Grant
-
2019
- 2019-02-28 CN CN201910150495.9A patent/CN110349985A/en active Pending
- 2019-04-02 JP JP2019070487A patent/JP2019186544A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060261427A1 (en) * | 2005-05-18 | 2006-11-23 | International Business Machines Corporation | Touching microlens structure for a pixel sensor and method of fabrication |
| CN1893026A (en) * | 2005-06-27 | 2007-01-10 | 东部电子有限公司 | Method for manufacturing of CMOS image sensor |
| US20080142686A1 (en) * | 2006-12-15 | 2008-06-19 | Yasutaka Konno | Solid-state imaging element, photo-detector and authentication system using the photo-detector |
| CN101436605A (en) * | 2007-11-16 | 2009-05-20 | 东部高科股份有限公司 | Image sensor and method for manufacturing thereof |
| US20100032781A1 (en) * | 2008-08-08 | 2010-02-11 | Samsung Electro-Mechanics Co., Ltd. | Camera module and method of manufacturing the same |
| CN103794615A (en) * | 2012-10-26 | 2014-05-14 | 佳能株式会社 | Solid-state imaging apparatus, method of manufacturing the same, and camera |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117497551A (en) * | 2023-12-25 | 2024-02-02 | 合肥晶合集成电路股份有限公司 | Image sensor and method for manufacturing the same |
| CN117497551B (en) * | 2023-12-25 | 2024-04-30 | 合肥晶合集成电路股份有限公司 | Image sensor and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20190116026A (en) | 2019-10-14 |
| KR102614907B1 (en) | 2023-12-19 |
| JP2019186544A (en) | 2019-10-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110349985A (en) | The method of imaging sensor and manufacture imaging sensor | |
| US7525733B2 (en) | Solid-state imaging device and method for manufacturing the same | |
| US7894139B2 (en) | Imaging apparatus and method for manufacturing microlens array | |
| CN105900238B (en) | Full single-chip integration of the optical lens on optical sensor substrate | |
| TWI538178B (en) | Camera, and method of manufacturing a plurality of cameras | |
| US6057538A (en) | Image sensor in which each lens element is associated with a plurality of pixels | |
| US20080285965A1 (en) | Method of forming thin camera | |
| US10277788B2 (en) | Ultrathin digital camera and method of manufacturing the same | |
| US7986019B2 (en) | Solid-state imaging device and its manufacturing method | |
| CA2557714A1 (en) | Lens array and method for making same | |
| CN108369338A (en) | Image capturing system | |
| US7297570B2 (en) | Complementary metal oxide semiconductor image sensor and method for fabricating the same | |
| US9723188B2 (en) | Image sensor, method of manufacturing the image sensor, and electronic device including the image sensor | |
| US10916575B2 (en) | Image sensor and method of manufacturing image sensor | |
| CN107452762A (en) | A kind of imaging sensor photosensitive structure and preparation method thereof | |
| US10481196B2 (en) | Image sensor with test region | |
| WO2023236486A1 (en) | Camera and electronic apparatus | |
| TWI703350B (en) | Thin film optical lens device | |
| US7675102B2 (en) | Image sensor | |
| CN112335049B (en) | Imaging assembly, touch screen, camera module, intelligent terminal, camera and distance measurement method | |
| CA3156517A1 (en) | Method for manufacturing a biometric imaging device by means of nanoimprint lithography | |
| Duparré et al. | Latest developments in micro-optical artificial compound eyes: a promising approach for next generation ultracompact machine vision | |
| TWI739557B (en) | Moiré imaging device | |
| KR100731060B1 (en) | Image sensor and method of manufacturing the same | |
| TWM630115U (en) | Image sensing device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |