CN107452762A - A kind of imaging sensor photosensitive structure and preparation method thereof - Google Patents
A kind of imaging sensor photosensitive structure and preparation method thereof Download PDFInfo
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- CN107452762A CN107452762A CN201710722434.6A CN201710722434A CN107452762A CN 107452762 A CN107452762 A CN 107452762A CN 201710722434 A CN201710722434 A CN 201710722434A CN 107452762 A CN107452762 A CN 107452762A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000007888 film coating Substances 0.000 claims abstract description 62
- 238000009501 film coating Methods 0.000 claims abstract description 62
- 238000007747 plating Methods 0.000 claims abstract description 38
- 230000008021 deposition Effects 0.000 claims abstract description 14
- 239000011248 coating agent Substances 0.000 claims abstract description 7
- 238000000576 coating method Methods 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 21
- 238000000151 deposition Methods 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 12
- 239000011347 resin Substances 0.000 claims description 9
- 229920005989 resin Polymers 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000004528 spin coating Methods 0.000 claims description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000012943 hotmelt Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 2
- 229920005992 thermoplastic resin Polymers 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 6
- 239000004926 polymethyl methacrylate Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000004313 glare Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 150000002604 lanthanum compounds Chemical class 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention discloses a kind of imaging sensor photosensitive structure and preparation method thereof, it is characterized in that, the photosensitive structure includes film coating unit, micro lens and photo-sensitive cell, the photo-sensitive cell is located at the underface of the micro lens, for receiving the incident light through micro lens, the top covering film coating unit of the micro lens, the film coating unit include at least one film plating layer；Wherein, incident light enters in the photo-sensitive cell by film coating unit and micro lens successively.A kind of imaging sensor photosensitive structure deposition plating unit on micro lens provided by the invention, can increase the transmissivity of micro lens, increase the sensitivity of imaging sensor；The scattering on micro lens surface can be reduced, eliminates influence of the scattering to adjacent pixel of light；Specific lambda1-wavelength can not be limited using micro lens surface coating, increases the feature of micro lens by colored filter and camera lens plated film.
Description
Technical field
The present invention relates to field of semiconductor technology, and in particular to a kind of imaging sensor photosensitive structure and preparation method thereof.
Background technology
In recent years, advanced manufacturing process Zhuo in terms of image sensor pixel size and increase sum of all pixels is reduced has into
Effect, but the sensitivity of imaging sensor reduces with the diminution of Pixel Dimensions.Micro-lens array (on-chip on piece
Microlens array, OMA) used first in IT ccd image sensors in nineteen eighty-three.In each pixel
There are a micro lens, incident light rays can be increased photon collection efficiency by OMA on photo-sensitive cell.In figure at this stage
As in sensor, defect can be reduced to make up the sensitivity of imaging sensor by increasing micro-lens array.
However, the measure of precision of micro-lens array is nothing like independent optical lens.This will cause the incidence of off-axis
Refraction or scattering occur on micro-lens array surface for light, so that incident light enters micro lens corresponding to adjacent pixel
On, so as to cause veiling glare incident；The photosensitive wave band of micro-lens array of the prior art is wider simultaneously.In a word, in the prior art
Imaging sensor containing micro-lens array can have following both sides：
(1) on charge coupling device sensor, veiling glare injection neighborhood pixels can cause high-contrast side in the picture
Edge produces blooming (Blooming)；
(2) the photosensitive wave band of semiconductor image sensor is wider than human eye, and most of imaging sensors can be in visible ray
Photosensitive outside scope, these black lights are mainly infrared light (IR) and ultraviolet light (UV), and their refractive index differences are larger, easily exist
Image border produces dispersion.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of imaging sensor photosensitive structure and preparation method thereof, the sense
Photo structure can increase the transmissivity of micro lens, reduce surface reflection and scattering, barrier portion wave band, improve image quality.
To achieve these goals, the present invention uses following technological means：A kind of imaging sensor photosensitive structure, including plating
Film unit, micro lens and photo-sensitive cell, the photo-sensitive cell are located at the underface of the micro lens, are passed through for receiving
The incident light of micro lens, the top covering film coating unit of the micro lens, the film coating unit include at least one plated film
Layer；Wherein, incident light enters in the photo-sensitive cell by film coating unit and micro lens successively.
Further, in addition to colored filter, the colored filter is between micro lens and photo-sensitive cell.
Further, the film coating unit is wavelength cut-off film coating unit or anti-reflection coating unit.
Further, the wavelength cut-off film coating unit is IR-cut film coating unit or ultraviolet cut-on film coating unit or can
See that optical wavelength ends film coating unit.
Further, the IR-cut film coating unit is alternately stacked by high index of refraction film plating layer and low-refraction film plating layer
Form.
Further, the material of the high index of refraction film plating layer is selected from titanium dioxide, five oxidation Tritanium/Trititaniums, zirconium dioxide, five
Aoxidize the one or more in two tantalums, niobium pentaoxide or H4 mixtures.
Further, the one kind or two of the material of the low-refraction film plating layer in silica or bifluoride magnesium
Kind.
A kind of preparation method of imaging sensor photosensitive structure, comprises the following steps：
S01：Make the substrates of lenses above photo-sensitive cell；
S02：In said lens deposition on substrate dielectric layer, obtained by graphical and hot melt micro- in substrates of lenses
Type lens；
S03：The deposition plating unit on above-mentioned micro lens.
Further, step S02 dielectric layers are resin material layer, obtain the side of the micro lens in substrates of lenses
Method is specially：
S0201：The spin coating resin material layer in substrates of lenses,
S0202：The splash-proofing sputtering metal layer on resin material layer；
S0203：The spin coating photoresist on above-mentioned metal level；
S0204：Default figure is obtained after exposure imaging；
S0205：Corrosion exposes the metal level come, and etches away photoresist and expose the resin material layer come；
S0206：Corrode remaining metal level, and thermoplastic resin material layer, obtain micro lens.
A kind of photosensitive system of imaging sensor, including film coating unit, micro-lens array and light-sensing element array, institute
State micro-lens array to be rearranged by micro lens, the light-sensing element array is rearranged by photo-sensitive cell, and photosensitive
Element corresponds with micro lens, and the top covering film coating unit of the micro-lens array, the film coating unit is included extremely
A kind of few film plating layer；Wherein, incident light enters in the light-sensing element array by film coating unit, micro-lens array successively,
Each micro lens and its corresponding photo-sensitive cell generate a pixel.
Beneficial effects of the present invention are：The deposition plating unit on micro lens, the transmissivity of micro lens can be increased,
Increase the sensitivity of imaging sensor；The scattering on micro lens surface can be reduced, eliminates shadow of the scattering to adjacent pixel of light
Ring；Specific incident light wave can not be limited using micro-lens array surface coating by colored filter and camera lens plated film
It is long, increase the feature of micro lens.
Brief description of the drawings
Fig. 1 is a kind of imaging sensor photosensitive structure schematic diagram of the present invention.
Fig. 2 is a kind of photosensitive system schematic diagram of imaging sensor of the present invention.
Fig. 3 is a kind of preparation method schematic diagram of imaging sensor photosensitive structure of the present invention.
In figure：1 photo-sensitive cell, 2 substrates of lenses, 3 micro lens, 4 film coating units.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with the accompanying drawings to the specific reality of the present invention
The mode of applying is described in further detail.
As shown in figure 1, a kind of imaging sensor photosensitive structure provided by the invention, including film coating unit 4, micro lens 3
And photo-sensitive cell 1, the photo-sensitive cell 1 are located at the underface of micro lens 3, for receiving the incidence through micro lens 3
Light, the top covering film coating unit 4 of micro lens 3, film coating unit 4 include at least one film plating layer；Wherein, incident light passes through successively
Cross film coating unit 4 and micro lens 3 enter in photo-sensitive cell 1.
Film coating unit can be wavelength cut-off film coating unit or anti-reflection coating unit, wherein, wavelength cut-off film coating unit is
IR-cut film coating unit or ultraviolet cut-on film coating unit or visible wavelength cut-off film coating unit, IR-cut film coating unit can
To limit the incidence of infrared light, ultraviolet cut-on film coating unit can limit the incidence of ultraviolet light, it is seen that optical wavelength ends plated film list
Member can limit the incidence of the visible ray of some fixed band.Anti-reflection coating unit can increase the transmission of micro-lens array
Rate, increase the sensitivity of imaging sensor.Certainly, the species of film coating unit is not limited to above-mentioned several, according to actual production demand,
Any film coating unit that can meet production requirement is suitable for the present invention.
Film coating unit is alternately stacked by least one layer of film plating layer and formed, when film plating layer is more than one, corresponding plated film list
Member is alternately stacked by the relatively low film plating layer of the of a relatively high film plating layer of refractive index and refractive index to be formed.Plated with IR-cut
Exemplified by film unit, IR-cut film coating unit is stacked by high index of refraction film plating layer and low-refraction film plating layer and formed, wherein, height folding
The material for penetrating rate film plating layer mixes selected from titanium dioxide, five oxidation Tritanium/Trititaniums, zirconium dioxide, tantalum pentoxide, niobium pentaoxide and H4
One or more in compound, wherein, H4 is a kind of plated film target of with high index of refraction absorptivity of Merck ＆ Co., Inc.'s exploitation,
Main component has titanium compound and lanthanum compound etc..The material of low-refraction film plating layer is in silica, bifluoride magnesium
It is one or two kinds of.Similarly, the film coating unit of remaining species also has high index of refraction film plating layer and low-refraction film plating layer alternating heap
It is folded to form.
As shown in Fig. 2 it is provided by the invention a kind of as sensor photosensitive system, by above-mentioned imaging sensor photosensitive structure group
Into, including film coating unit 4, micro-lens array and light-sensing element array, micro-lens array be made up of micro lens 3, feels
Optical component array is made up of photo-sensitive cell 1, and the corresponding photo-sensitive cell 1 of each micro lens 3, each micro lens 3 and sense
The corresponding pixel of optical element 1.The top covering film coating unit 4 of micro-lens array, film coating unit 4 include at least one plated film
Layer.Wherein, incident light enters in light-sensing element array by film coating unit, micro-lens array successively, i.e., incident light passes through one
Individual micro lens 3 photo-sensitive cell 1 corresponding with its, generates a pixel.Wherein, photo-sensitive cell is that photodiode etc. is used to feel
The device of light, and when imaging sensor is used for photochrome processing, can be set between micro-lens array and photo-sensitive cell
Colored filter is put, and colored filter can arrange, but be not limited to Bayer battle array according to its filter effect according to Bayer array
The arrangement mode of row.A because picture point in each photo-sensitive cell correspondence image sensor, due to photo-sensitive cell intelligent-induction
The intensity of light, color information can not be caught, therefore color sensor must cover colored filter above photo-sensitive cell.
Micro lens can be by the incident light rays Jing Guo film coating unit on photo-sensitive cell, so as to increase photon collection effect
Rate, therefore, the corresponding micro lens of each pixel, all micro-lens arrays are according to pixel received bit in imaging sensor
Put and line up, collectively constitute micro-lens array, all micro lens in micro-lens array are in hemispherical and spherical
Center face photo-sensitive cell center.
The imaging sensor photosensitive system being made up of above-mentioned photosensitive structure, the film coating unit above micro-lens array is by extremely
Few one layer of film plating layer, which is alternately stacked, to be formed, and when film plating layer is more than one, corresponding film coating unit is of a relatively high by refractive index
Film plating layer and the relatively low film plating layer of refractive index be alternately stacked and form.
A kind of imaging sensor photosensitive structure provided by the invention, the transmissivity of micro lens can be increased, increase image
The sensitivity of sensor；The scattering on micro lens surface can be reduced, eliminates influence of the scattering to adjacent pixel of light；Can not
By colored filter and camera lens plated film, specific lambda1-wavelength is limited using micro-lens array surface coating, increase is micro-
The feature of type lens.
As shown in Fig. 2 a kind of preparation method of imaging sensor photosensitive structure provided by the invention, comprises the following steps：
S01：Make the substrates of lenses above photo-sensitive cell.
Wherein, specific steps include：
S0101：It is pointed to the substrates of lenses above photo-sensitive cell to be cleaned, removes the dust of substrates of lenses adsorption
And grease.
S0102：Said lens substrate is dried, removes moisture and volatile substances that substrates of lenses top introduces.
S02：In said lens deposition on substrate dielectric layer, obtained by graphical and hot melt micro- in substrates of lenses
Type lens；
Wherein, dielectric layer is from the fusing point material higher than photoresist, can be resin material layer, such as PMMA film, with
Under by taking PMMA film as an example, specific steps include：
S0201：The spin coating PMMA film in substrates of lenses,
S0202：The splash-proofing sputtering metal layer in PMMA film；
S0203：The spin coating photoresist on above-mentioned metal level；
S0204：Default figure is obtained after exposure imaging；
S0205：Corrosion exposes the metal level come, and etches away photoresist and expose the PMMA film come；
S0206：Corrode remaining metal level, and heat PMMA film, it is miniature by controlling the temperature and time of hot melt to obtain
Lens.
S03：The deposition plating unit on above-mentioned micro lens.Wherein, first according to being actually needed, design has different refractions
The film coating unit of rate, and determine the material of each film plating layer and its arrangement situation in film coating unit.Again under vacuum, lead to
Cross physical gas phase deposition technology (Physical Vapor Deposition, PVD), make each film plating layer in film coating unit according to
Secondary uniform deposition ultimately forms film coating unit on micro-lens array.
The present invention can also be with the following method during micro lens are made：
T01：Make the substrates of lenses above photo-sensitive cell；
T02：According to the refractive index of photoresist and the size of required design lenticule, the thickness of photoresist is calculated, enters
And the spin coating positive photoresist in substrates of lenses；
T03：Substrates of lenses and photoresist are exposed completely using uv-exposure equipment and mask plate；
T03：Hot melt molding, heating cause above-mentioned photoresist to form the lenticule of hemisphere surface structure.
Wherein, positive-tone photo glue material is AZ4620, AZ1500, AZ GXR601 or AZ9260 positive-tone photo glue materials.Thoroughly
Mirror substrate is silicon chip, quartz or plating tin indium oxide quartz.
The preparation method of imaging sensor photosensitive system is same as above in the present invention, in manufacturing process, by micro lens and sense
Optical element is combined into array, while completes the making of its array, deposition plating above it after obtained micro-lens array
Unit, wherein, film coating unit is as described in above-mentioned embodiment, here, not elaborating.
Physical gas phase deposition technology is certainly, existing from one kind in vacuum evaporation, magnetron sputtering, ion plating in the present invention
There are all physical gas phase deposition technologies in technology to can reach the purpose for forming film coating unit in the present invention.The present invention is using true
Physical gas phase deposition technology under empty condition can accurately control the thickness of each film plating layer in film coating unit.
The preferred embodiments of the present invention are the foregoing is only, the embodiment is not intended to limit the patent protection of the present invention
Scope, therefore the equivalent structure change that every specification and accompanying drawing content with the present invention is made, similarly should be included in this
In the protection domain of invention appended claims.
Claims (10)
1. a kind of imaging sensor photosensitive structure, it is characterised in that including film coating unit, micro lens and photo-sensitive cell, institute
The underface that photo-sensitive cell is located at the micro lens is stated, for receiving the incident light through micro lens, the micro lens
Top covering film coating unit, the film coating unit includes at least one film plating layer；Wherein, incident light passes through film coating unit successively
Enter with micro lens in the photo-sensitive cell.
A kind of 2. imaging sensor photosensitive structure according to claim 1, it is characterised in that also including colored filter,
The colored filter is between micro lens and photo-sensitive cell.
3. a kind of imaging sensor photosensitive structure according to claim 1, it is characterised in that the film coating unit is wavelength
End film coating unit or anti-reflection coating unit.
A kind of 4. imaging sensor photosensitive structure according to claim 3, it is characterised in that the wavelength cut-off plated film list
Member ends film coating unit for IR-cut film coating unit or ultraviolet cut-on film coating unit or visible wavelength.
A kind of 5. imaging sensor photosensitive structure according to claim 4, it is characterised in that the IR-cut plated film list
Member is alternately stacked and formed by high index of refraction film plating layer and low-refraction film plating layer.
A kind of 6. imaging sensor photosensitive structure according to claim 5, it is characterised in that the high index of refraction film plating layer
Material in titanium dioxide, five oxidation Tritanium/Trititaniums, zirconium dioxide, tantalum pentoxide, niobium pentaoxide or H4 mixtures one
Kind is several.
A kind of 7. imaging sensor photosensitive structure according to claim 5, it is characterised in that the low-refraction film plating layer
Material be selected from one or both of silica or bifluoride magnesium.
A kind of 8. method of the imaging sensor photosensitive structure made described in claim 1, it is characterised in that including following step
Suddenly：
S01：Make the substrates of lenses above photo-sensitive cell；
S02：In said lens deposition on substrate dielectric layer, obtained by graphical and hot melt miniature in substrates of lenses
Mirror；
S03：The deposition plating unit on above-mentioned micro lens.
9. a kind of preparation method of imaging sensor photosensitive structure according to claim 8, it is characterised in that in step S02
Dielectric layer is resin material layer, and the method for obtaining the micro lens in substrates of lenses is specially：
S0201：The spin coating resin material layer in substrates of lenses,
S0202：The splash-proofing sputtering metal layer on resin material layer；
S0203：The spin coating photoresist on above-mentioned metal level；
S0204：Default figure is obtained after exposure imaging；
S0205：Corrosion exposes the metal level come, and etches away photoresist and expose the resin material layer come；
S0206：Corrode remaining metal level, and thermoplastic resin material layer, obtain micro lens.
A kind of 10. photosensitive system for the imaging sensor that photosensitive structure by described in claim 1 forms, it is characterised in that bag
Film coating unit, micro-lens array and light-sensing element array are included, the micro-lens array is rearranged by micro lens, institute
State light-sensing element array to be rearranged by photo-sensitive cell, and photo-sensitive cell corresponds with micro lens, the micro lens
The top covering film coating unit of array, the film coating unit include at least one film plating layer；Wherein, incident light passes through plated film successively
Unit, micro-lens array enter in the light-sensing element array, each micro lens and its corresponding photo-sensitive cell generation one
Individual pixel.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108666332A (en) * | 2018-05-02 | 2018-10-16 | 德淮半导体有限公司 | Reduce the structure and preparation method thereof of imaging sensor dark current |
| CN111754876A (en) * | 2020-06-28 | 2020-10-09 | 昆山国显光电有限公司 | Display panel and display device |
| CN115704927A (en) * | 2021-08-03 | 2023-02-17 | 科瑞工业自动化***（苏州）有限公司 | Receiving device for photoelectric sensor based on lens coating and operation method thereof |
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| CN111754876B (en) * | 2020-06-28 | 2022-06-21 | 昆山国显光电有限公司 | Display panel and display device |
| CN115704927A (en) * | 2021-08-03 | 2023-02-17 | 科瑞工业自动化***（苏州）有限公司 | Receiving device for photoelectric sensor based on lens coating and operation method thereof |
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