CN110310829A - Buried capacitor material, preparation method and printed wiring board - Google Patents
Buried capacitor material, preparation method and printed wiring board Download PDFInfo
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- CN110310829A CN110310829A CN201910434319.8A CN201910434319A CN110310829A CN 110310829 A CN110310829 A CN 110310829A CN 201910434319 A CN201910434319 A CN 201910434319A CN 110310829 A CN110310829 A CN 110310829A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
Abstract
The present invention relates to electronic package material technical fields, and in particular to a kind of buried capacitor material, preparation method and printed wiring board.The capacitance material includes: two electrode layers；And the compound dielectric layer between described two electrode layers, the raw material composition of the compound dielectric layer includes polymeric material, conducting filler and high dielectric filler.Buried capacitor material of the invention is provided with the compound dielectric layer comprising polymeric material, conducting filler and high dielectric filler, while reducing dielectric loss and leakage current, improving the capacitance density of buried capacitor material, thermal conductivity is also improved, can satisfy the requirement of PCB double-sided etching process.
Description
Technical field
The present invention relates to electronic package material technical fields, and in particular to a kind of buried capacitor material, preparation method
And printed wiring board.
Background technique
With the development of electronic information technology, especially in recent years with wearable electronic, smart phone, ultra-thin computer, nothing
People drives, the fast development based on technology of Internet of things and 5G mechanics of communication, to the miniaturization of electronic system, it is lightening, multi-functional,
High-performance etc. proposes increasingly higher demands.Ceramic dielectric material of the tradition based on patch capacitor is driven to subtract rapidly
It is thin, cause dielectric substance the problems such as easy to crack, defect is more, leakage current is big occur.
Due to the workability of polymer material, it has been widely used in many fields.By polymer material and filler
Particle is compound, the performances such as the various electricity of adjustable composite material, mechanics, calorifics, magnetics.By the ceramics with high dielectric constant
Particle and polymer material progress are compound, can get high dielectric constant when compared with high filler loading capacity, are prepared into buried capacitor
Material is built-in to may replace surface mount capacitors with printed circuit intralamellar part, be conducive to electronic device miniaturization, it is lightening and
Improve the electric property of electronic device.
With the increase of electronic device integrated level, power consumption, electronic device generates a large amount of heat when running.Heat dissipation performance pair
The service life of device has important influence.In general, the general lower (0.4W/ of the thermal conductivity of existing buried capacitor material
MK), it is unfavorable for the longtime running stability of electronic device.
The use process of buried capacitor material is related to PCB single side etch process and double-sided etching process.Using two-sided erosion
Carving technology can reduce the process in PCB process, save cost.It is suitable for the flush type of PCB double-sided etching process at present
Capacitance material usually introduces thin polymer film interlayer in the dielectric layer.Because the dielectric constant of polymer interlayers is low, significantly reduce
The capacitance density of capacitance material.The machine of polymer composites can be enhanced by nano wire or fiber that high length-diameter ratio is added
Tool performance provides possibility for double-sided etching process.But add the nano wire of high length-diameter ratio or fiber is unfavorable for electric slurry
Film forming, the nano wire or fiber of high length-diameter ratio be easily intertwined, and a large amount of aperture is generated in electric slurry film forming procedure and is lacked
It falls into, increases the leakage current of capacitance material.
In consideration of it, overcoming the above defect in the prior art, providing the new buried capacitor material of one kind becomes this field
Technical problem urgently to be resolved.
Summary of the invention
It is an object of the invention in view of the above drawbacks of the prior art, provide a kind of buried capacitor material, its preparation
Method and printed wiring board.
The purpose of the present invention can be realized by technical measures below:
The present invention provides a kind of buried capacitor material, the capacitance material includes:
Two electrode layers；And
The raw material of compound dielectric layer between described two electrode layers, the compound dielectric layer forms packet
Include polymeric material, conducting filler and high dielectric filler.
It preferably, is in terms of 100% by the total weight of compound dielectric layer, the raw material of the compound dielectric layer forms
Including 20%~50% polymeric material, 10%~80% conducting filler and 40%~80% high dielectric filler.
Preferably, the electrode layer is copper foil, the copper foil with a thickness of 1 μm~70 μm, the rough surface of the copper foil
Degree is 0.1 μm~10 μm.
Preferably, the compound dielectric layer with a thickness of 2~30 μm；
Or, the thermal conductivity of the compound dielectric layer is greater than or equal to 0.4W/mK.
Preferably, the draw ratio of the conducting filler is 1~10；
Or, the size of the high dielectric filler is 20nm~1 μm；
Or, the conducting filler includes high thermal conductivity inorganic filler and/or modified heat filling, the high thermal conductivity is inorganic to be filled out
Material includes one of boron nitride, silicon carbide, aluminium oxide, aluminium nitride, zinc oxide or magnesia or a variety of, and the modification is thermally conductive
Filler is to prepare to be formed in high thermal conductivity inorganic filler surface deposition conducting nanoparticles, and the conducting nanoparticles are silver, Jin Huo
Graphene；
Or, the high dielectric filler includes ceramic packing and/or modified ceramic filler, the ceramic packing includes metatitanic acid
Barium, barium strontium titanate, zirconium barium strontium titanate, lead titanates, lead zirconate titanate, lead magnesio-niobate, strontium titanates, CaCu 3 Ti 4 O, boron nitride or oxidation
One of aluminium is a variety of, and the modified ceramic filler is to prepare to be formed in ceramic packing surface deposition conducting nanoparticles, institute
Conducting nanoparticles are stated as silver, gold or graphene；
Or, the polymeric material includes thermoplastic resin and/or thermosetting resin, the thermoplastic resin includes gathering inclined two
Vinyl fluoride, polyvinylidene fluoride bipolymer, polyvinylidene fluoride terpolymer, polytetrafluoroethylene (PTFE), perfluoroethylene-propylene,
Polyvinyl resin, acrylic resin, Corvic, polystyrene resin, polyamide, acetal resin, poly- carbonic acid
One of ester resin, polyphenylene oxide resin or polysulfone resin are a variety of, and the thermosetting resin includes epoxy resin, polyamides Asia
Polyimide resin, polyetherimide, bismaleimide cyanate ester resin, polyacrylic resin, phenolic resin, unsaturated polyester (UP) tree
One of rouge, melamine resin, furane resins, polybutadiene or organic siliconresin are a variety of.
Preferably, the compound dielectric layer include be respectively arranged on two heat-conducting medium layers on the inside of two electrode layers,
Stack gradually two dielectric layer of high dielectric constant in two heat-conducting medium layers, wherein heat-conducting medium layer includes polymer substrate
And it is scattered in the conducting filler of the polymer substrate, dielectric layer of high dielectric constant includes polymer substrate and is scattered in
The high dielectric filler of the polymer substrate；
Or, the compound dielectric layer includes two high dielectric constants being respectively arranged on the inside of two electrode layers
Layer stacks gradually two heat-conducting medium layers in two dielectric layer of high dielectric constant, wherein heat-conducting medium layer includes polymer matrix
Matter and the conducting filler for being scattered in the polymer substrate, dielectric layer of high dielectric constant include polymer substrate and dispersion
In the high dielectric filler of the polymer substrate；
Or, the compound dielectric layer includes being respectively arranged on two heat-conducting medium layers on the inside of two electrode layers, being set to
The dielectric layer of high dielectric constant of two heat-conducting medium layers, wherein heat-conducting medium layer includes polymer substrate and is scattered in described
The conducting filler of polymer substrate, dielectric layer of high dielectric constant include polymer substrate and are scattered in the polymer substrate
High dielectric filler；
Or, the compound dielectric layer includes two high dielectric constants being respectively arranged on the inside of two electrode layers
Layer, set on the heat-conducting medium layer of two dielectric layer of high dielectric constant, wherein heat-conducting medium layer includes polymer substrate and dispersion
In the conducting filler of the polymer substrate, dielectric layer of high dielectric constant includes polymer substrate and is scattered in the polymerization
The high dielectric filler of object matrix；
Or, the compound dielectric layer includes being respectively arranged on a heat-conducting medium layer on the inside of two electrode layers and one
Dielectric layer of high dielectric constant, wherein heat-conducting medium layer includes polymer substrate and is scattered in the thermally conductive of the polymer substrate
Property filler, dielectric layer of high dielectric constant includes polymer substrate and the high dielectric filler for being scattered in the polymer substrate；
Or, the compound dielectric layer includes polymer substrate and is scattered in the thermal conductivity of the polymer substrate and fills out
Material and high dielectric filler；
Or, the compound dielectric layer includes thermally conductive-high dielectric layer stacked gradually, polymer material layer and leads
Heat-dielectric layer of high dielectric constant, wherein the thermally conductive-dielectric layer of high dielectric constant includes polymer substrate and is scattered in institute
State polymer substrate conducting filler and high dielectric filler.
The present invention also provides a kind of preparation method of buried capacitor material, the preparation method includes:
It disperses conducting filler in the solution of first polymer material, to prepare heat-conducting medium slurry；By Gao Jie electricity
Filler is scattered in the solution of second polymer material, to prepare high dielectric media slurry；
Inside coated with thermally conductive dielectric paste in an electrode layer, the inside in another electrode layer coat high dielectric media
Slurry dries slurry；Or, heat-conducting medium slurry is respectively coated on the inside of two electrode layers, slurry is dried, at one or two
Continue to coat high dielectric media slurry on the inside of electrode layer, dries slurry；Or, Gao Jie is respectively coated on the inside of two electrode layers
Dielectric slurry dries slurry, continues coated with thermally conductive dielectric paste in the inside of one or two electrode layer, dries slurry；
Two electrode layers are overlapped so that the inside of two electrode layers is close to each other, gained lamination is successively subjected to hot pressing and heat
Solidification, to obtain buried capacitor material.
The present invention also provides a kind of preparation method of buried capacitor material, the preparation method includes:
It disperses conducting filler and high dielectric filler in the solution of polymer, to prepare thermally conductive-high dielectric media slurry
Material；
Thermally conductive-high dielectric media slurry is respectively coated on the inside of two electrode layers, dries slurry；Or, in two electrodes
Thermally conductive-high dielectric media slurry is respectively coated in the inside of layer, dries slurry, and it is poly- to continue coating on the inside of a wherein electrode layer
Object slurry is closed, slurry is dried；
Two electrode layers are overlapped so that the inside of two electrode layers is close to each other, gained lamination is successively subjected to hot pressing and heat
Solidification, to obtain buried capacitor material.
Preferably, the temperature of the hot pressing is 70 DEG C~150 DEG C, and the pressure of the hot pressing is 10psi~1000psi；Institute
Stating cured temperature is 100 DEG C~300 DEG C, and the cured time is 1 hour~6 hours.
The present invention also provides a kind of printed wiring board, the printed wiring board is built-in with above-mentioned buried capacitor material
Or the buried capacitor material prepared by above-mentioned preparation method.
Buried capacitor material of the invention, which is provided with, includes the compound of polymeric material, conducting filler and high dielectric filler
Type dielectric layer also mentions while reducing dielectric loss and leakage current, improving the capacitance density of buried capacitor material
High thermal conductivity, can satisfy the requirement of PCB double-sided etching process.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the buried capacitor material of the first embodiment of the invention.
Fig. 2 is the structural schematic diagram of the buried capacitor material of second of embodiment of the invention.
Fig. 3 is the structural schematic diagram of the buried capacitor material of the third embodiment of the invention.
Fig. 4 is the structural schematic diagram of the buried capacitor material of the 4th kind of embodiment of the invention.
Fig. 5 is the structural schematic diagram of the buried capacitor material of the 5th kind of embodiment of the invention.
Fig. 6 is the structural schematic diagram of the buried capacitor material of the 6th kind of embodiment of the invention.
Fig. 7 is the structural schematic diagram of the buried capacitor material of the 7th kind of embodiment of the invention.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawing and specific implementation
Invention is further described in detail for example.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention,
It is not intended to limit the present invention.
In order to keep the narration of this disclosure more detailed with it is complete, below for embodiments of the present invention and specific real
It applies example and proposes illustrative description；But this not implements or uses the unique forms of the specific embodiment of the invention.Embodiment
In cover multiple specific embodiments feature and to construction with operate these specific embodiments method and step it is suitable with it
Sequence.However, can also reach identical or impartial function and sequence of steps using other specific embodiments.
The embodiment of the invention provides a kind of buried capacitor materials, refering to Figure 1, the capacitance material includes:
First electrode layer 11, compound dielectric layer 10 and the second electrode lay 12 stacked gradually, wherein compound dielectric layer 10
Raw material composition includes polymeric material, conducting filler and high dielectric filler.
It wherein, is in terms of 100% by the total weight of compound dielectric layer 10, the raw material of the compound dielectric layer forms
Including 20%~50% polymeric material, 10%~80% conducting filler and 40%~80% high dielectric filler.When thermal conductivity is filled out
It is smaller to the thermal conductivity contribution of compound dielectric layer when the content of material is lower than 10wt%, it is unfavorable for compound dielectric layer heat
The raising of conductance；It is smaller to the dielectric constant contribution of compound dielectric layer when the content of high dielectric filler is lower than 40wt%, no
Conducive to the raising of compound dielectric layer dielectric constant.In addition, when preparing slurry, when filler content (conducting filler
Content or high dielectric filler content or the sum of the content of conducting filler and high dielectric filler content) be higher than 80wt% when, fill out
Material particle is easy to produce precipitating in the slurry, and the stability of slurry is caused to decline, and is easy to produce defect when making coating.
Wherein, the compound dielectric layer with a thickness of 2~30 μm, the thermal conductivity of the compound dielectric layer is greater than
Or it is equal to 0.4W/mK.
In a preferred embodiment, first electrode layer 11 and the second electrode lay are copper foil, the thickness of the copper foil
It is 1 μm~70 μm, the surface roughness of the copper foil is 0.1 μm~10 μm.
In a preferred embodiment, the draw ratio of the conducting filler is 1~10, and the conducting filler includes
High thermal conductivity inorganic filler and/or modified heat filling, the high thermal conductivity inorganic filler includes boron nitride, silicon carbide, aluminium oxide, nitrogen
Change one of aluminium, zinc oxide or magnesia or a variety of, the modified heat filling is to deposit in high thermal conductivity inorganic filler surface
Conducting nanoparticles prepare to be formed, and the conducting nanoparticles are silver, gold or graphene.
In a preferred embodiment, the size of the high dielectric filler is 20nm~1 μm, the high dielectric filler packet
Ceramic packing and/or modified ceramic filler are included, the ceramic packing includes barium titanate, barium strontium titanate, zirconium barium strontium titanate, metatitanic acid
One of lead, lead zirconate titanate, lead magnesio-niobate, strontium titanates, CaCu 3 Ti 4 O, boron nitride or aluminium oxide are a variety of, the modified pottery
Porcelain filling is to prepare to be formed in ceramic packing surface deposition conducting nanoparticles, and the conducting nanoparticles are silver, gold or graphite
Alkene.
In a preferred embodiment, the polymeric material includes thermoplastic resin and/or thermosetting resin, the heat
Plastic resin includes polyvinylidene fluoride, polyvinylidene fluoride bipolymer, polyvinylidene fluoride terpolymer, polytetrafluoro
Ethylene, perfluoroethylene-propylene, polyvinyl resin, acrylic resin, Corvic, polystyrene resin, polyamide,
One of acetal resin, polycarbonate resin, polyphenylene oxide resin or polysulfone resin are a variety of, the thermosetting resin packet
Include epoxy resin, polyimide resin, polyetherimide, bismaleimide cyanate ester resin, polyacrylic resin, phenolic aldehyde tree
One of rouge, unsaturated polyester resin, melamine resin, furane resins, polybutadiene or organic siliconresin
Or it is a variety of.
It please refers to shown in Fig. 1 to Fig. 7, the structure of compound dielectric layer can use following preferred embodiment.Accordingly
Ground, the embodiment of the invention also provides the preparation methods of buried capacitor material.
In first embodiment, which includes being respectively arranged on first electrode layer 11 and second electrode
The the first heat-conducting medium layer 13 and the second heat-conducting medium layer 14 of 12 inside of layer are stacked gradually in the first heat-conducting medium layer 13 and second
The first dielectric layer of high dielectric constant 15 and the second dielectric layer of high dielectric constant 16 between heat-conducting medium layer 14, wherein first leads
Thermal medium layer 13 and the second heat-conducting medium layer 14 include polymer substrate and the thermal conductivity for being scattered in the polymer substrate
Filler, the first dielectric layer of high dielectric constant 15 and the second dielectric layer of high dielectric constant 16 include polymer substrate and are scattered in
The high dielectric filler of the polymer substrate.The preparation method of the buried capacitor material of first embodiment includes:
S101 disperses conducting filler in the solution of first polymer material, to prepare heat-conducting medium slurry；It will be high
Dielectric filler is scattered in the solution of second polymer material, to prepare high dielectric media slurry；
Heat-conducting medium slurry is respectively coated in S102 on the inside of two electrode layers, slurry is dried, in two electrode layers
Side continues to coat high dielectric media slurry, dries slurry；
S103 overlaps two electrode layers so that the inside of two electrode layers is close to each other, gained lamination is successively carried out heat
Pressure and heat cure, to obtain buried capacitor material.
In the second embodiment, which includes being respectively arranged on first electrode layer 21 and second electrode
The first dielectric layer of high dielectric constant 23 and the second dielectric layer of high dielectric constant 24 of 22 inside of layer are stacked gradually in the first high dielectric
The first heat-conducting medium layer 25 and the second heat-conducting medium layer 26 between constant dielectric layer 23 and the second dielectric layer of high dielectric constant 24,
Wherein, the first heat-conducting medium layer 25 and the second heat-conducting medium layer 26 including polymer substrate and are scattered in the polymer matrix
The conducting filler of matter, the first dielectric layer of high dielectric constant 23 and the second dielectric layer of high dielectric constant 24 include polymer substrate
And it is scattered in the high dielectric filler of the polymer substrate.The preparation method of the buried capacitor material of second embodiment
Include:
S201 disperses conducting filler in the solution of first polymer material, to prepare heat-conducting medium slurry；It will be high
Dielectric filler is scattered in the solution of second polymer material, to prepare high dielectric media slurry；
S202, is respectively coated high dielectric media slurry on the inside of two electrode layers, dries slurry, in two electrode layers
Coated with thermally conductive dielectric paste is continued in inside, dries slurry；
S203 overlaps two electrode layers so that the inside of two electrode layers is close to each other, gained lamination is successively carried out heat
Pressure and heat cure, to obtain buried capacitor material.
In third embodiment, which includes being respectively arranged on first electrode layer 31 and second electrode
The the first heat-conducting medium layer 34 and the second heat-conducting medium layer 35 of 32 inside of layer are set to the first heat-conducting medium layer 34 and second thermally conductive Jie
Dielectric layer of high dielectric constant 33 between matter layer 35, wherein the first heat-conducting medium layer 34 and the second heat-conducting medium layer 35 include
Polymer substrate and the conducting filler for being scattered in the polymer substrate, dielectric layer of high dielectric constant 33 include polymer matrix
Matter and the high dielectric filler for being scattered in the polymer substrate.The preparation side of the buried capacitor material of third embodiment
Method includes:
S301 disperses conducting filler in the solution of first polymer material, to prepare heat-conducting medium slurry；It will be high
Dielectric filler is scattered in the solution of second polymer material, to prepare high dielectric media slurry；
Heat-conducting medium slurry is respectively coated in S302 on the inside of two electrode layers, dries slurry, wherein an electrode layer
Inside continue to coat high dielectric media slurry, dry slurry；
S303 overlaps two electrode layers so that the inside of two electrode layers is close to each other, gained lamination is successively carried out heat
Pressure and heat cure, to obtain buried capacitor material.
In the 4th embodiment, which includes being respectively arranged on first electrode layer 41 and second electrode
The first dielectric layer of high dielectric constant 44 and the second dielectric layer of high dielectric constant 45 of 42 inside of layer are set to the first high dielectric constant Jie
Heat-conducting medium layer 43 between matter layer 44 and the second dielectric layer of high dielectric constant 45, wherein heat-conducting medium layer includes polymer matrix
Matter and the conducting filler for being scattered in the polymer substrate, dielectric layer of high dielectric constant include polymer substrate and dispersion
In the high dielectric filler of the polymer substrate.The preparation method of the buried capacitor material of 4th embodiment includes:
S401 disperses conducting filler in the solution of first polymer material, to prepare heat-conducting medium slurry；It will be high
Dielectric filler is scattered in the solution of second polymer material, to prepare high dielectric media slurry；
S402, the inside coated with thermally conductive dielectric paste in an electrode layer, the inside in another electrode layer coat Gao Jie
Dielectric slurry dries slurry, continues coated with thermally conductive dielectric paste in the inside of a wherein electrode layer, dries slurry；
S403 overlaps two electrode layers so that the inside of two electrode layers is close to each other, gained lamination is successively carried out heat
Pressure and heat cure, to obtain buried capacitor material.
In the 5th embodiment, which includes being respectively arranged on first electrode layer 51 and second electrode
A dielectric layer of high dielectric constant 54 and a heat-conducting medium layer 53 for 52 inside of layer, wherein heat-conducting medium layer 53 includes polymerization
Object matrix and the conducting filler for being scattered in the polymer substrate, dielectric layer of high dielectric constant 54 include polymer substrate with
And it is scattered in the high dielectric filler of the polymer substrate.The preparation method packet of the buried capacitor material of 5th embodiment
It includes:
S501 disperses conducting filler in the solution of first polymer material, to prepare heat-conducting medium slurry；It will be high
Dielectric filler is scattered in the solution of second polymer material, to prepare high dielectric media slurry；
S502, the inside coated with thermally conductive dielectric paste in an electrode layer, the inside in another electrode layer coat Gao Jie
Dielectric slurry dries slurry；
S503 overlaps two electrode layers so that the inside of two electrode layers is close to each other, gained lamination is successively carried out heat
Pressure and heat cure, to obtain buried capacitor material.
In the 6th embodiment, the compound dielectric layer 63 be set to first electrode layer 61 and the second electrode lay 62 it
Between comprising polymer substrate and be scattered in the polymer substrate conducting filler and high dielectric filler.6th reality
The preparation method for applying the buried capacitor material of mode includes:
S601 disperses conducting filler and high dielectric filler in the solution of polymer, is situated between with preparing thermally conductive-high dielectric
Chylema material；
S602, is respectively coated thermally conductive-high dielectric media slurry on the inside of two electrode layers, dries slurry, and wherein one
Coated polymer slurry is continued in the inside of a electrode layer, dries slurry；
S603 overlaps two electrode layers so that the inside of two electrode layers is close to each other, gained lamination is successively carried out heat
Pressure and heat cure, to obtain buried capacitor material.
In the 7th embodiment, which includes stacking gradually in first electrode layer 71 and the second electricity
The first thermally conductive-high dielectric layer 74, the thermally conductive-dielectric layer of high dielectric constant of polymer material layer 73 and second between pole layer 72
75, wherein the thermally conductive-dielectric layer of high dielectric constant 74,75 including polymer substrate and is scattered in the polymer matrix
The conducting filler of matter and high dielectric filler, that any filler is not added in polymer material layer 73.7th embodiment
The preparation method of buried capacitor material includes:
S701 disperses conducting filler and high dielectric filler in the solution of polymer, is situated between with preparing thermally conductive-high dielectric
Chylema material；
S702 dries slurry in inside coated with thermally conductive-high dielectric media slurry of a wherein electrode layer；
S703 overlaps two electrode layers so that the inside of two electrode layers is close to each other, gained lamination is successively carried out heat
Pressure and heat cure, to obtain buried capacitor material.
Specifically, in above-mentioned heat-conducting medium slurry, high dielectric media slurry, thermally conductive-high dielectric media slurry, work as filler
Content (content of conducting filler or high dielectric filler content or the content of conducting filler and high dielectric filler content it
With) be higher than 80wt% when, filler grain is easy to produce precipitating in the slurry, cause the stability of slurry to decline, production coating when
It is easy to produce defect.
Further, in the above preparation method, slurry preparation can be selected planetary ball mill, sand mill, homogenizer,
One of ultrasonic machine, blender etc. or a variety of dispersing apparatus by fluoropolymer resin, thermally conductive filling out property material, high dielectric filler, solvent,
Auxiliary agent etc. is uniformly mixed.The coating equipments such as comma scraper, silk-screen printing, reticulate pattern transfer, spraying that can be used will starch for the coating of slurry
Material is homogeneously applied to the surface of copper foil.
Further, in the above preparation method, the temperature of the hot pressing is 70 DEG C~150 DEG C, the pressure of the hot pressing
For 10psi~1000psi；The cured temperature is 100 DEG C~300 DEG C, and the cured time is 1 hour~6 hours.
The embodiment of the invention also provides a kind of printed wiring board, the printed wiring board is built-in with the flush type electricity
Capacity materials or the buried capacitor material prepared by the preparation method.
Embodiment 1
The preparation method for present embodiments providing a kind of buried capacitor material, includes the following steps:
1. preparing two parts of resin solutions, Resin Solution Component is as follows: epoxy resin E21 10g, E51 8g, methyl hexahydrobenzene
Acid anhydride 15g, 2-ethyl-4-methylimidazole 1g, butanone 10g are stirred dissolution；
2. weighing 100nm barium titanate 100g, nonylphenol polyoxyethylene ether 3g, butanone 40g, carries out ball milling and be uniformly dispersed；
3. weighing 500nm Nano bars of alumina 60g, nonylphenol polyoxyethylene ether 1.8g, butanone 30g, ball milling dispersion is carried out
Uniformly；
4. the dispersion liquid of barium titanate and aluminium oxide is mixed with a resin solution respectively, disperse using ball milling equal
It is even, obtain high dielectric polymer slurry and highly thermally conductive polymeric slurry；
5. a piece of wherein or two after 100 DEG C of drying by the coating of highly thermally conductive polymeric slurry and two panels copper foil surface
One layer high dielectric polymer slurry is coated on piece overlay film copper foil；
6. two panels overlay film copper foil material carries out, hot pressing is compound, and combined temp is 80 DEG C；
7. composite material is carried out heat cure, heat cure heating curve is 120 DEG C and keeps the temperature 30 minutes, is warming up to 180 DEG C of guarantors
Temperature 1.5 hours obtains high thermal conductivity, Gao Jie electricity buried capacitor material after cooling.
Embodiment 2
The preparation method for present embodiments providing a kind of buried capacitor material, includes the following steps:
1. preparing two parts of resin solutions, Resin Solution Component is as follows: epoxy resin E21 10g, E51 8g, methyl hexahydrobenzene
Acid anhydride 15g, 2-ethyl-4-methylimidazole 1g, butanone 10g are stirred dissolution；
2. weighing 100nm barium titanate 100g, nonylphenol polyoxyethylene ether 3g, butanone 40g, carries out ball milling and be uniformly dispersed；
3. weighing 500nm Nano bars of alumina 60g, nonylphenol polyoxyethylene ether 1.8g, butanone 30g, ball milling dispersion is carried out
Uniformly；
4. the dispersion liquid of barium titanate and aluminium oxide is mixed with a resin solution respectively, disperse using ball milling equal
It is even, obtain high dielectric polymer slurry and highly thermally conductive polymeric slurry；
5. a piece of wherein or two after 100 DEG C of drying by the coating of high dielectric polymer slurry and two panels copper foil surface
One layer of highly thermally conductive polymeric slurry is coated on piece overlay film copper foil；
6. two panels overlay film copper foil material carries out, hot pressing is compound, and combined temp is 80 DEG C；
7. composite material is carried out heat cure, heat cure heating curve is 120 DEG C and keeps the temperature 30 minutes, is warming up to 180 DEG C of guarantors
Temperature 1.5 hours obtains high thermal conductivity, Gao Jie electricity buried capacitor material after cooling.
Embodiment 3
The preparation method for present embodiments providing a kind of buried capacitor material, includes the following steps:
1. preparing two parts of resin solutions, Resin Solution Component is as follows: epoxy resin E21 10g, E51 8g, methyl hexahydrobenzene
Acid anhydride 15g, 2-ethyl-4-methylimidazole 1g, butanone 10g are stirred dissolution；
2. weighing 100nm barium titanate 100g, nonylphenol polyoxyethylene ether 3g, butanone 40g, carries out ball milling and be uniformly dispersed；
3. weighing 500nm Nano bars of alumina 60g, nonylphenol polyoxyethylene ether 1.8g, butanone 30g, ball milling dispersion is carried out
Uniformly；
4. the dispersion liquid of barium titanate and aluminium oxide is mixed with a resin solution respectively, disperse using ball milling equal
It is even, obtain high dielectric polymer slurry and highly thermally conductive polymeric slurry；
5. high dielectric polymer slurry and the coating of highly thermally conductive polymeric slurry and copper foil surface are dried by 100 DEG C respectively
After dry, one layer of highly thermally conductive polymeric slurry is coated on a piece of wherein or two panels overlay film copper foil；
6. two panels overlay film copper foil material carries out, hot pressing is compound, and combined temp is 80 DEG C；
7. composite material is carried out heat cure, heat cure heating curve is 120 DEG C and keeps the temperature 30 minutes, is warming up to 180 DEG C of guarantors
Temperature 1.5 hours obtains high thermal conductivity, Gao Jie electricity buried capacitor material after cooling.
Embodiment 4
The preparation method for present embodiments providing a kind of buried capacitor material, includes the following steps:
1. preparing a resin solution, Resin Solution Component is as follows: weighing epoxy resin E21 20g, E51 16g, methyl
Hexahydrophthalic anhydride 30g, 2-ethyl-4-methylimidazole 2g, butanone 20g are stirred dissolution；
2. weighing 100nm barium titanate 100g, nonylphenol polyoxyethylene ether 3g, butanone 40g, carries out ball milling and be uniformly dispersed；
3. weighing 500nm Nano bars of alumina 60g, nonylphenol polyoxyethylene ether 1.8g, butanone 30g, ball milling dispersion is carried out
Uniformly；
4. the dispersion liquid of barium titanate and aluminium oxide is mixed with resin solution, it is uniformly dispersed, obtains using ball milling
Polymer-electronics slurry；
5. the coating of polymer-electronics slurry is obtained covering copper foil material with two panels copper foil surface after 100 DEG C of drying；
6. two panels overlay film copper foil material carries out, hot pressing is compound, and combined temp is 80 DEG C；
7. composite material is carried out heat cure, heat cure heating curve is 120 DEG C and keeps the temperature 30 minutes, is warming up to 180 DEG C of guarantors
Temperature 1.5 hours obtains high thermal conductivity, Gao Jie electricity buried capacitor material after cooling.
Embodiment 5
The preparation method for present embodiments providing a kind of buried capacitor material, includes the following steps:
1. preparing a resin solution, Resin Solution Component is as follows: weighing epoxy resin E21 20g, E51 16g, methyl
Hexahydrophthalic anhydride 30g, 2-ethyl-4-methylimidazole 2g, butanone 20g are stirred dissolution；
2. weighing 100nm barium titanate 100g, nonylphenol polyoxyethylene ether 3g, butanone 40g, carries out ball milling and be uniformly dispersed；
3. weighing 500nm Nano bars of alumina 60g, nonylphenol polyoxyethylene ether 1.8g, butanone 30g, ball milling dispersion is carried out
Uniformly；
4. the dispersion liquid of barium titanate and aluminium oxide is mixed with resin solution, it is uniformly dispersed, obtains using ball milling
Polymer-electronics slurry；
5. the coating of polymer-electronics slurry is obtained covering copper foil material with two panels copper foil surface after 100 DEG C of drying；
6. two panels overlay film copper foil material is carried out with Kapton, hot pressing is compound, and combined temp is 80 DEG C；
7. composite material is carried out heat cure, heat cure heating curve is 120 DEG C and keeps the temperature 30 minutes, is warming up to 180 DEG C of guarantors
Temperature 1.5 hours obtains high thermal conductivity, Gao Jie electricity buried capacitor material after cooling.
Embodiment 6
The preparation method for present embodiments providing a kind of buried capacitor material, includes the following steps:
1. preparing a resin solution, Resin Solution Component is as follows: weighing epoxy resin E21 20g, E51 16g, methyl
Hexahydrophthalic anhydride 30g, 2-ethyl-4-methylimidazole 2g, butanone 20g are stirred dissolution；
2. weighing 100nm barium titanate 100g, nonylphenol polyoxyethylene ether 3g, butanone 40g, carries out ball milling and be uniformly dispersed；
3. weighing 500nm Nano bars of alumina 60g, nonylphenol polyoxyethylene ether 1.8g, butanone 30g, ball milling dispersion is carried out
Uniformly；
4. the dispersion liquid of barium titanate and aluminium oxide is mixed with resin solution, it is uniformly dispersed, obtains using ball milling
Polymer-electronics slurry；
5. the coating of polymer-electronics slurry is obtained covering copper foil material with a piece of copper foil surface after 100 DEG C of drying；
6. overlay film copper foil material is carried out with copper foil, hot pressing is compound, and combined temp is 80 DEG C；
7. composite material is carried out heat cure, heat cure heating curve is 120 DEG C and keeps the temperature 30 minutes, is warming up to 180 DEG C of guarantors
Temperature 1.5 hours obtains high thermal conductivity, Gao Jie electricity buried capacitor material after cooling.
Embodiment 7
The preparation method for present embodiments providing a kind of buried capacitor material, includes the following steps:
1. preparing a resin solution, Resin Solution Component is as follows: weighing epoxy resin E21 20g, E51 16g, double cyanogen
Amine 3g, 2-ethyl-4-methylimidazole 0.1g, butanone 20g are stirred dissolution；
2. weighing 200nm barium titanate 100g, nonylphenol polyoxyethylene ether 3g, butanone 40g, carries out ball milling and be uniformly dispersed；
3. weighing 300nm aluminium oxide 60g, nonylphenol polyoxyethylene ether 1.8g, butanone 30g, carries out ball milling and be uniformly dispersed；
4. the dispersion liquid of barium titanate and aluminium oxide is mixed with resin solution, it is uniformly dispersed, obtains using ball milling
Polymer-electronics slurry；
5. the coating of polymer-electronics slurry is obtained covering copper foil material with two panels copper foil surface after 100 DEG C of drying；
6. overlay film copper foil material is carried out with polytetrafluoroethylene film, hot pressing is compound, and combined temp is 80 DEG C；
7. composite material is carried out heat cure, heat cure heating curve is 120 DEG C and keeps the temperature 30 minutes, is warming up to 180 DEG C of guarantors
Temperature 1.5 hours obtains high thermal conductivity, Gao Jie electricity buried capacitor material after cooling.
Embodiment 8
The preparation method for present embodiments providing a kind of buried capacitor material, includes the following steps:
1. preparing a resin solution, Resin Solution Component is as follows: weighing epoxy resin E21 20g, E51 16g, double cyanogen
Amine 3g, 2-ethyl-4-methylimidazole 0.1g, butanone 20g are stirred dissolution；
2. 200nm barium titanate 100g, nonylphenol polyoxyethylene ether 3g, the butanone 40g of surface deposition 20nm silver particles are weighed,
Ball milling is carried out to be uniformly dispersed；
3. weighing 300nm aluminium oxide 60g, nonylphenol polyoxyethylene ether 1.8g, butanone 30g, carries out ball milling and be uniformly dispersed；
4. the dispersion liquid of barium titanate and aluminium oxide is mixed with resin solution, it is uniformly dispersed, obtains using ball milling
Polymer-electronics slurry；
5. the coating of polymer-electronics slurry is obtained covering copper foil material with two panels copper foil surface after 100 DEG C of drying；
6. overlay film copper foil material is carried out with Kapton, hot pressing is compound, and combined temp is 80 DEG C；
7. composite material is carried out heat cure, heat cure heating curve is 120 DEG C and keeps the temperature 30 minutes, is warming up to 180 DEG C of guarantors
Temperature 1.5 hours obtains high thermal conductivity, Gao Jie electricity buried capacitor material after cooling.
Embodiment 9
The preparation method for present embodiments providing a kind of buried capacitor material, includes the following steps:
1. preparing a resin solution, Resin Solution Component is as follows: weighing epoxy resin E21 20g, E51 16g, double cyanogen
Amine 3g, 2-ethyl-4-methylimidazole 0.1g, butanone 20g are stirred dissolution；
2. weighing 200nm barium titanate 100g, nonylphenol polyoxyethylene ether 3g, butanone 40g, carries out ball milling and be uniformly dispersed；
3. weighing the 300nm aluminium oxide 60g of surface deposition 20nm silver particles, nonylphenol polyoxyethylene ether 1.8g, butanone
30g carries out ball milling and is uniformly dispersed；
4. the dispersion liquid of barium titanate and aluminium oxide is mixed with resin solution, it is uniformly dispersed, obtains using ball milling
Polymer-electronics slurry；
5. the coating of polymer-electronics slurry is obtained covering copper foil material with two panels copper foil surface after 100 DEG C of drying；
6. overlay film copper foil material is carried out with Kapton, hot pressing is compound, and combined temp is 80 DEG C；
7. composite material is carried out heat cure, heat cure heating curve is 120 DEG C and keeps the temperature 30 minutes, is warming up to 180 DEG C of guarantors
Temperature 1.5 hours obtains high thermal conductivity, Gao Jie electricity buried capacitor material after cooling.
Embodiment 10
The preparation method for present embodiments providing a kind of buried capacitor material, includes the following steps:
1. preparing a resin solution, Resin Solution Component is as follows: weighing epoxy resin E21 20g, E51 16g, double cyanogen
Amine 3g, 2-ethyl-4-methylimidazole 0.1g, butanone 20g are stirred dissolution；
2. 200nm barium titanate 100g, nonylphenol polyoxyethylene ether 3g, the butanone 40g of surface deposition 20nm silver particles are weighed,
Ball milling is carried out to be uniformly dispersed；
3. weighing the 300nm aluminium oxide 60g of surface deposition 20nm silver particles, nonylphenol polyoxyethylene ether 1.8g, butanone
30g carries out ball milling and is uniformly dispersed；
4. the dispersion liquid of barium titanate and aluminium oxide is mixed with resin solution, it is uniformly dispersed, obtains using ball milling
Polymer-electronics slurry；
5. the coating of polymer-electronics slurry is obtained covering copper foil material with two panels copper foil surface after 100 DEG C of drying；
6. overlay film copper foil material is carried out with Kapton, hot pressing is compound, and combined temp is 80 DEG C；
7. composite material is carried out heat cure, heat cure heating curve is 120 DEG C and keeps the temperature 30 minutes, is warming up to 180 DEG C of guarantors
Temperature 1.5 hours obtains high thermal conductivity, Gao Jie electricity buried capacitor material after cooling.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (10)
1. a kind of buried capacitor material, which is characterized in that the capacitance material includes:
Two electrode layers；And
The raw material composition of compound dielectric layer between described two electrode layers, the compound dielectric layer includes poly-
Condensation material, conducting filler and high dielectric filler.
2. buried capacitor material according to claim 1, which is characterized in that the total weight with compound dielectric layer is
The raw material composition of 100% meter, the compound dielectric layer is filled out including 20%~50% polymeric material, 10%~80% thermal conductivity
Material and 40%~80% high dielectric filler.
3. buried capacitor material according to claim 1, which is characterized in that the electrode layer is copper foil, the copper foil
With a thickness of 1 μm~70 μm, the surface roughness of the copper foil is 0.1 μm~10 μm.
4. buried capacitor material according to claim 1, which is characterized in that the compound dielectric layer with a thickness of
2~30 μm；
Or, the thermal conductivity of the compound dielectric layer is greater than or equal to 0.4W/mK.
5. buried capacitor material according to claim 1, which is characterized in that the draw ratio of the conducting filler is 1
~10；
Or, the size of the high dielectric filler is 20nm~1 μm；
Or, the conducting filler includes high thermal conductivity inorganic filler and/or modified heat filling, the high thermal conductivity inorganic filler packet
Include one of boron nitride, silicon carbide, aluminium oxide, aluminium nitride, zinc oxide or magnesia or a variety of, the modified heat filling
It to be formed to be prepared in high thermal conductivity inorganic filler surface deposition conducting nanoparticles, the conducting nanoparticles are silver, gold or graphite
Alkene；
Or, the high dielectric filler includes ceramic packing and/or modified ceramic filler, the ceramic packing includes barium titanate, titanium
In sour strontium barium, zirconium barium strontium titanate, lead titanates, lead zirconate titanate, lead magnesio-niobate, strontium titanates, CaCu 3 Ti 4 O, boron nitride or aluminium oxide
One or more, the modified ceramic filler is to prepare to be formed in ceramic packing surface deposition conducting nanoparticles, the conduction
Nanoparticle is silver, gold or graphene；
Or, the polymeric material includes thermoplastic resin and/or thermosetting resin, the thermoplastic resin includes gathering inclined difluoro second
Alkene, polyvinylidene fluoride bipolymer, polyvinylidene fluoride terpolymer, polytetrafluoroethylene (PTFE), perfluoroethylene-propylene, poly- second
Olefine resin, acrylic resin, Corvic, polystyrene resin, polyamide, acetal resin, polycarbonate resin
One of rouge, polyphenylene oxide resin or polysulfone resin are a variety of, and the thermosetting resin includes epoxy resin, polyimides tree
Rouge, polyetherimide, bismaleimide cyanate ester resin, polyacrylic resin, phenolic resin, unsaturated polyester resin, three
One of melamine-formaldehyde resin, furane resins, polybutadiene or organic siliconresin are a variety of.
6. buried capacitor material according to any one of claims 1 to 5, which is characterized in that the compound dielectric
Layer includes being respectively arranged on two heat-conducting medium layers on the inside of two electrode layers, stacking gradually two height in two heat-conducting medium layers
Dielectric coefficient medium layer, wherein heat-conducting medium layer includes polymer substrate and the thermal conductivity for being scattered in the polymer substrate
Filler, dielectric layer of high dielectric constant include polymer substrate and the high dielectric filler for being scattered in the polymer substrate；
Or, the compound dielectric layer include be respectively arranged on two dielectric layer of high dielectric constant on the inside of two electrode layers, according to
Secondary two heat-conducting medium layers for being laminated in two dielectric layer of high dielectric constant, wherein heat-conducting medium layer include polymer substrate with
And it is scattered in the conducting filler of the polymer substrate, dielectric layer of high dielectric constant includes polymer substrate and is scattered in institute
State the high dielectric filler of polymer substrate；
Or, the compound dielectric layer includes being respectively arranged on two heat-conducting medium layers on the inside of two electrode layers, being set to two
The dielectric layer of high dielectric constant of heat-conducting medium layer, wherein heat-conducting medium layer includes polymer substrate and is scattered in the polymerization
The conducting filler of object matrix, dielectric layer of high dielectric constant include polymer substrate and the height for being scattered in the polymer substrate
Dielectric filler；
Or, the compound dielectric layer includes being respectively arranged on two dielectric layer of high dielectric constant on the inside of two electrode layers, setting
In the heat-conducting medium layer of two dielectric layer of high dielectric constant, wherein heat-conducting medium layer includes polymer substrate and is scattered in institute
State the conducting filler of polymer substrate, dielectric layer of high dielectric constant includes polymer substrate and is scattered in the polymer matrix
The high dielectric filler of matter；
Or, the compound dielectric layer includes the heat-conducting medium layer and a Gao Jie being respectively arranged on the inside of two electrode layers
Constant dielectric layer, wherein heat-conducting medium layer includes polymer substrate and is scattered in the thermal conductivity of the polymer substrate and fills out
Material, dielectric layer of high dielectric constant includes polymer substrate and the high dielectric filler for being scattered in the polymer substrate；
Or, the compound dielectric layer include polymer substrate and be scattered in the polymer substrate conducting filler and
High dielectric filler；
Or, the compound dielectric layer includes thermally conductive-high dielectric layer stacked gradually, polymer material layer and thermally conductive-
Dielectric layer of high dielectric constant, wherein the thermally conductive-dielectric layer of high dielectric constant includes polymer substrate and is scattered in described poly-
The conducting filler of polymer matrix and high dielectric filler.
7. a kind of preparation method of buried capacitor material, which is characterized in that the preparation method includes:
It disperses conducting filler in the solution of first polymer material, to prepare heat-conducting medium slurry；By high dielectric filler
It is scattered in the solution of second polymer material, to prepare high dielectric media slurry；
Inside coated with thermally conductive dielectric paste in an electrode layer, the inside in another electrode layer coat high dielectric media slurry
Material dries slurry；Or, heat-conducting medium slurry is respectively coated on the inside of two electrode layers, slurry is dried, in one or two electricity
The inside of pole layer continues to coat high dielectric media slurry, dries slurry；Or, high dielectric is respectively coated on the inside of two electrode layers
Dielectric paste dries slurry, continues coated with thermally conductive dielectric paste in the inside of one or two electrode layer, dries slurry；
Two electrode layers are overlapped so that the inside of two electrode layers is close to each other, gained lamination is successively subjected to hot pressing and thermosetting
Change, to obtain buried capacitor material.
8. a kind of preparation method of buried capacitor material, which is characterized in that the preparation method includes:
It disperses conducting filler and high dielectric filler in the solution of polymer, to prepare thermally conductive-high dielectric media slurry；
Thermally conductive-high dielectric media slurry is respectively coated on the inside of two electrode layers, dries slurry；Or, in two electrode layers
Thermally conductive-high dielectric media slurry is respectively coated in inside, dries slurry, continues coated polymer in the inside of a wherein electrode layer
Slurry dries slurry；
Two electrode layers are overlapped so that the inside of two electrode layers is close to each other, gained lamination is successively subjected to hot pressing and thermosetting
Change, to obtain buried capacitor material.
9. according to the preparation method of the buried capacitor material of claim 8 or 9, which is characterized in that the temperature of the hot pressing is
70 DEG C~150 DEG C, the pressure of the hot pressing is 10psi~1000psi；The cured temperature is 100 DEG C~300 DEG C, described
The cured time is 1 hour~6 hours.
10. a kind of printed wiring board, which is characterized in that the printed wiring board is built-in just like described in any one of claim 1 to 6
Buried capacitor material or the buried capacitor material prepared by any one of claim 7 to 9 preparation method.
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