CN110289314A - 高电压金氧半场效晶体管 - Google Patents
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- 230000005669 field effect Effects 0.000 title claims abstract description 39
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 39
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 39
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 8
- 150000004767 nitrides Chemical class 0.000 claims description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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Abstract
一种高电压金氧半场效晶体管,适用于高电压范围,其包括基板、磊晶层、多个第一掺杂区、多个第一沟槽、多个第二沟槽、多个第二掺杂区以及金属层。磊晶层设置于基板上以作为漏极;多个第一掺杂区设置于磊晶层内;多个第一沟槽间隔设置于各第一掺杂区上,各第一沟槽具有第一沟槽氧化层和连接源极的第一半导体层;多个第二沟槽间隔设置于各第一沟槽间,各第二沟槽具有第二沟槽氧化层和连接栅极的第二半导体层;多个第二掺杂区间隔设置于每个第一沟槽和第二沟槽间;金属层设置于磊晶层上,并连接各第二掺杂区和源极。
Description
技术领域
本发明关于一种金氧半场效晶体管,特别是,一种具有沟槽结构且耐高电压的高电压金氧半场效晶体管。
背景技术
随着电子技术的进步以及电子产品的小型化趋势,越来越多电子元件利用集成电路制程的方式生产,然而,集成电路型式的电子元件需考虑许多层面,例如耐压、相互干扰或抗杂讯之类的问题,尤其是应用在电源电路的电子元件,由于电源电路需接受高电压的输入,而高电压的输入会导致集成电路型式的电子元件烧毁,进而导致电源电路的故障,其为造成电源电路的尺寸无法缩小的主因。
其中,金氧半场效晶体管也常应用于电源电路,由于金氧半场效晶体管的操作速度相当快,且在电压讯号处理方面表现相当优异,因而应用金氧半场效晶体管作为转换器使用。而为了对应电子产品的小型化趋势,金氧半场效晶体管也逐渐迈向集成电路化的方向,然而,当电源电路承受高电压时,集成电路型式的金氧半场效晶体管同样也会因耐不住高压而烧毁,因此,如何解决前述的症结点,遂成为待解决的问题。
综观前文所述,本发明的发明者思索并设计一种高电压金氧半场效晶体管,以期针对公知技术的缺失加以改善,进而增进产业上的实施利用。
发明内容
有鉴于上述公知的问题,本发明的目的在于提供一种高电压金氧半场效晶体管,用以解决公知技术中所面临的问题。
基于上述目的,本发明提供一种高电压金氧半场效晶体管,其包括基板、磊晶层、多个第一掺杂区、多个第一沟槽、多个第二沟槽、多个第二掺杂区以及金属层。磊晶层设置于基板上以作为漏极,多个第一掺杂区设置于磊晶层内;多个第一沟槽分别间隔设置于各第一掺杂区上且位于磊晶层内,各第一沟槽具有第一沟槽氧化层以及第一半导体层,各第一沟槽氧化层形成于各第一沟槽的底部和侧壁,各第一半导体层填满各第一沟槽并分别连接源极;多个第二沟槽分别间隔设置于每个第一沟槽间且位于磊晶层内,各第二沟槽具有第二沟槽氧化层以及第二半导体层,各第二沟槽氧化层形成于各第二沟槽的底部和侧壁,各第二半导体层填满各第二沟槽并分别连接栅极;多个第二掺杂区分别间隔设置于每个第一沟槽和每个第二沟槽间且位于磊晶层内,各第二掺杂区包括第一掺杂层以及设置于第一掺杂层上的第二掺杂层;金属层设置于磊晶层之上,并连接各第二掺杂区以及源极。
优选地,各第一沟槽氧化层和各第一半导体层之间具有沟槽氮化层,沟槽氮化层由氮化硅组成。
优选地,各沟槽氮化层和各第一半导体层之间具有第一沟槽氧化层,沟槽氮化层位于两层第一沟槽氧化层之间。
优选地,两个第一沟槽之间具有两个第二沟槽。
优选地,基板为硅基板,各第一沟槽氧化层和各第二沟槽氧化层为二氧化硅,各第一半导体层和各第二半导体层为多晶硅。
优选地,各第一沟槽的深度为7微米至15微米。
优选地,磊晶层为n型,各第一掺杂区为p型,各第一掺杂层为p型,各第二掺杂层为n型。
优选地,磊晶层为p型,各第一掺杂区为n型,各第一掺杂层为n型,各第二掺杂层为p型。
优选地,高电压范围为200伏特至800伏特。
本发明的高电压金氧半场效晶体管,由于各沟槽的深度为微米等级且具有沟槽氧化层和沟槽氮化层的配置,因此本发明在高电压范围下仍能正常运行,可将本发明应用于接受高电压输入的电源电路中,以达到电源电路小型化的目的。
附图说明
图1为本发明的高电压金氧半场效晶体管的第一实施例的结构图;
图2为本发明的高电压金氧半场效晶体管的第一实施例的电压和电流图;
图3为本发明的高电压金氧半场效晶体管的第二实施例的结构图;
图4为本发明的高电压金氧半场效晶体管的第三实施例的结构图;
图5为本发明的高电压金氧半场效晶体管的第四实施例的结构图。
【符号说明】
10:基板
20:磊晶层
30:第一掺杂区
40:第一沟槽
41:第一沟槽氧化层
42:第一半导体层
43:沟槽氮化层
50:第二沟槽
51:第二沟槽氧化层
52:第二半导体层
60:第二掺杂区
61:第一掺杂层
62:第二掺杂层
70:金属层
S:源极
D:漏极
G:栅极。
具体实施方式
本发明的优点、特征以及达到的技术方法将参照示例性实施例及所附图式进行更详细地描述而更容易理解,且本发明可以不同形式来实现,故不应被理解仅限于此处所陈述的实施例,相反地,对所属技术领域具有通常知识者而言,所提供的实施例将使本发明揭露地更加透彻与全面且完整地传达本发明的范畴,且本发明将仅为所附加的权利要求范围所定义。
如附图1所示,其为本发明的高电压金氧半场效晶体管第一实施例的结构图。在本实施例中,本发明的高电压金氧半场效晶体管,其包括基板10、磊晶层20、多个第一掺杂区30、多个第一沟槽40、多个第二沟槽50、多个第二掺杂区60以及金属层70。基板10为硅基板;磊晶层20设置于基板10上且为p型,以作为漏极D,多个第一掺杂区30设置于磊晶层20内且为n型;多个第一沟槽40分别间隔设置于各第一掺杂区30上且位于磊晶层20内,各第一沟槽40具有第一沟槽氧化层41以及第一半导体层42,各第一沟槽氧化层41形成于各第一沟槽40的底部和侧壁,各第一半导体层42填满各第一沟槽40并分别连接源极S,而各第一沟槽氧化层41由二氧化硅组成,各第一半导体层42由多晶硅组成;多个第二沟槽50分别间隔设置于每个第一沟槽40间且位于磊晶层20内,各第二沟槽50具有第二沟槽氧化层51以及第二半导体层52,各第二沟槽氧化层51形成于各第二沟槽50的底部和侧壁,各第二半导体层52填满各第二沟槽50并分别连接栅极G,而各第二沟槽氧化层51由二氧化硅组成,各第二半导体层52由多晶硅组成;多个第二掺杂区60分别间隔设置于每个第一沟槽40和每个第二沟槽50间且位于磊晶层20内,各第二掺杂区60包括第一掺杂层61以及设置于第一掺杂层61上的第二掺杂层62,而第一掺杂层61为n型,第二掺杂层62为p型;金属层70设置于磊晶层20之上,并连接各第二掺杂区60以及源极S。
再者,由于各第一沟槽40的深度为7微米至15微米之间、各第一沟槽40具有第一沟槽氧化层41以及各第二沟槽50具有第二沟槽氧化层51,且第一沟槽氧化层41和第二沟槽氧化层51由二氧化硅组成而具备相当高的电阻值而不易导电,因此本发明能承受200伏特至800伏特的高电压范围,当然也可根据电子元件的电压规格需求调整各第一沟槽40的深度,进而应用于不同电压规格的电源电路,而不会因为高电压而烧毁。此时,第一沟槽氧化层41和第二沟槽氧化层51的厚度设计相当重要,因为若第一沟槽氧化层41的厚度或第二沟槽氧化层51的厚度太薄,则会因为电阻降低而无法承受高电压。优选地,第一沟槽氧化层41和第二沟槽氧化层51的厚度为600纳米至1000纳米,以达成不容易导电的目的,进而能承受高电压。
另外,多个第一掺杂区30、磊晶层20、多个第一掺杂层61以及多个第二掺杂层62需为低浓度掺杂,因为高浓度掺杂会增加导电性,假若多个第一掺杂区30、磊晶层20、多个第一掺杂层61以及多个第二掺杂层62高浓度掺杂,则会因为导电性增加而在高电压时烧毁,而需低浓度掺杂多个第一掺杂区30、磊晶层20、多个第一掺杂层61以及多个第二掺杂层62以降低其导电性,从而让本发明能承受高电压。优选地,各第一掺杂区30的浓度为1015~1017/cm3,磊晶层20的浓度为1014~1016/cm3,基板10本身的浓度1019/cm3,多个第一掺杂区30和磊晶层20的浓度与基板10的浓度约相差1000倍,在施加高电压于本发明时,由于多个第一掺杂区30和磊晶层20的低浓度而不容易导通,让本发明在高电压时仍能正常运作。
请参阅附图2,其为本发明的高电压金氧半场效晶体管第一实施例的电压和电流图。测量条件为在漏极D施加高电压,在栅极G和源极S施加低电压,并把栅极G和源极S短路而让栅极G和源极S之间的电压差为零,造成漏极D的电压值比源极S的电压值高,使本发明的高电压金氧半场效晶体管在逆偏状态。其中,附图2的电压为漏极D和源极S之间的电压,附图2的电流为漏极D和源极S之间的电流,逆向临界电压约为625V,显露本发明在600V以上仍能正常运作,进而使本发明在高电流时仍未烧毁。
请参阅附图3,其为本发明的高电压金氧半场效晶体管第二实施例的结构图。在本实施例中,相同元件符号的元件,其配置与前述类似,其类似处在此便不再加以赘述。
如附图3所示,各第一沟槽氧化层41和各第一半导体层42之间具有沟槽氮化层43,沟槽氮化层43由氮化硅组成,各沟槽氮化层43和各第一沟槽氧化层41之间的堆叠顺序可互换,也就是说,可先分别沉积多层沟槽氮化层43在多个沟槽40中,接续沉积多层第一沟槽氧化层41和多层半导体层42,由于氮化硅材料的电阻值也相当高,因此,多层第一沟槽氧化层41和多层沟槽氮化层43的搭配更能耐高电压。此外,磊晶层20为p型,各第一掺杂区30为n型,各第一掺杂层61为n型,各第二掺杂层62为p型,当然也可根据实际应用的需求,更改为:磊晶层20为n型,各第一掺杂区30为p型,各第一掺杂层61为p型,各第二掺杂层62为n型。
总之,由于先通过反应式离子蚀刻和曝光显影搭配来形成多个第一沟槽40,接续填入第一沟槽氧化层41、沟槽氮化层43以及第一半导体层42于各第一沟槽40,此种填入方式让第一沟槽氧化层41、沟槽氮化层43以及第一半导体层42的膜相当均匀,进而让第一沟槽氧化层41、沟槽氮化层43和第一半导体层42之间电荷分布相当平均,第一沟槽氧化层41、沟槽氮化层43和第一半导体层42之间形成的电容相当稳定。
请参阅附图4,其为本发明的高电压金氧半场效晶体管第三实施例的结构图。在本实施例中,相同元件符号的元件,其配置与前述类似,其类似处于此便不再加以赘述。
如附图4所示,各沟槽氮化层43和各第一半导体层42之间具有第一沟槽氧化层41,沟槽氮化层43位于两层第一沟槽氧化层41之间,由于两层第一沟槽氧化层41和沟槽氮化层43的设置,进而提高电阻值以承受较高的电压,此外,可根据电子元件的电压规格调整两层第一沟槽氧化层41和沟槽氮化层43的厚度,以符合不同电压规格的电源电路,而不会因为高电压而烧毁。
另外,本案不需要通过串接金氧半场效晶体管的方式来耐高电压,而是通过调整两层第一沟槽氧化层41和沟槽氮化层43的厚度和深度,达成耐高电压的目的,因此,就晶片方面的应用,由于本发明不需串接金氧半场效晶体管,本发明在晶片上的面积大幅缩小,而能在晶片上设计其他电子元件,让晶片的功能更多样化。
如附图5所示,其为本发明的高电压金氧半场效晶体管第四实施例的结构图。在本实施例中,相同元件符号的元件,其配置与前述类似,其类似处在此便不再加以赘述。
如附图5所示,多个第一沟槽40的其中两个之间具有两个第二沟槽50,增加第二沟槽50的密度而降低本发明的导通电阻。由于各第二沟槽50具有第二沟槽氧化层51和第二半导体层52,即时补偿磊晶层20的电荷且稳定源极S的电荷分布,让漏极D和源极S能运行更为流畅。
综上所述,本发明的高电压金氧半场效晶体管,利用多层第一沟槽氧化层41和多层沟槽氮化层43的搭配,使本发明在高电压范围仍能顺利运行,并有多层第二沟槽氧化层51和多层第二半导体层52,即时补偿磊晶层20的电荷,让漏极D和源极S流畅地运行。总而言之,本发明的高电压金氧半场效晶体管具有如上述的优点,利用多层第一沟槽氧化层41和多层沟槽氮化层43的设置,达成在高电压运作正常的目的。
以上所述仅为举例性,而非为限制性者。任何未脱离本发明的精神与范畴,而对其进行的等效修改或变更,均应包含于所附的权利要求范围中。
Claims (9)
1.一种高电压金氧半场效晶体管,适用于高电压范围,其特征在于,包含:
基板;
磊晶层,设置于所述基板上以作为漏极;
多个第一掺杂区,设置于所述磊晶层内;
多个第一沟槽,分别间隔设置于各个所述第一掺杂区上且位于所述磊晶层内,各个所述第一沟槽具有第一沟槽氧化层以及第一半导体层,各个所述第一沟槽氧化层形成于各个所述第一沟槽的底部和侧壁,各个所述第一半导体层填满各个所述第一沟槽并分别连接源极;
多个第二沟槽,分别间隔设置于每个所述第一沟槽间,且位于所述磊晶层内,各个所述第二沟槽具有第二沟槽氧化层以及第二半导体层,各个所述第二沟槽氧化层形成于各个所述第二沟槽的底部和侧壁,各个所述第二半导体层填满各个所述第二沟槽并分别连接栅极;
多个第二掺杂区,分别间隔设置于每个所述第一沟槽和每个所述第二沟槽间,且位于所述磊晶层内,各个所述第二掺杂区包括第一掺杂层以及设置于所述第一掺杂层上的第二掺杂层;以及
金属层,设置于所述磊晶层之上,并连接各个所述第二掺杂区以及所述源极。
2.如权利要求1所述的高电压金氧半场效晶体管,其特征在于,各个所述第一沟槽氧化层和各个所述第一半导体层之间具有沟槽氮化层,所述沟槽氮化层由氮化硅组成。
3.如权利要求2所述的高电压金氧半场效晶体管,其特征在于,各个所述沟槽氮化层和各个所述第一半导体层之间具有所述第一沟槽氧化层,所述沟槽氮化层位于两层所述第一沟槽氧化层之间。
4.如权利要求1所述的高电压金氧半场效晶体管,其特征在于,两个所述第一沟槽之间具有两个所述第二沟槽。
5.如权利要求1所述的高电压金氧半场效晶体管,其特征在于,所述基板为硅基板,各个所述第一沟槽氧化层和各个所述第二沟槽氧化层为二氧化硅,各个所述第一半导体层和各个所述第二半导体层为多晶硅。
6.如权利要求1所述的高电压金氧半场效晶体管,其特征在于,各个所述第一沟槽的深度为7微米至15微米。
7.如权利要求1所述的高电压金氧半场效晶体管,其特征在于,所述磊晶层为n型,各个所述第一掺杂区为p型,各个所述第一掺杂层为p型,各个所述第二掺杂层为n型。
8.如权利要求1所述的高电压金氧半场效晶体管,其特征在于,所述磊晶层为p型,各个所述第一掺杂区为n型,各个所述第一掺杂层为n型,各个所述第二掺杂层为p型。
9.如权利要求1所述的高电压金氧半场效晶体管,其特征在于,所述高电压范围为200伏特至800伏特。
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