CN110286320B - Direct current breaker semiconductor component turn-off capability test loop with protection function - Google Patents

Direct current breaker semiconductor component turn-off capability test loop with protection function Download PDF

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CN110286320B
CN110286320B CN201910589708.8A CN201910589708A CN110286320B CN 110286320 B CN110286320 B CN 110286320B CN 201910589708 A CN201910589708 A CN 201910589708A CN 110286320 B CN110286320 B CN 110286320B
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unit
test
semiconductor component
current
energy absorption
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CN110286320A (en
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齐磊
东野忠昊
刘珂鑫
张午宇
魏晓光
王成昊
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North China Electric Power University
Global Energy Interconnection Research Institute
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North China Electric Power University
Global Energy Interconnection Research Institute
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2608—Circuits therefor for testing bipolar transistors
    • G01R31/2617—Circuits therefor for testing bipolar transistors for measuring switching properties thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2632—Circuits therefor for testing diodes
    • G01R31/2633—Circuits therefor for testing diodes for measuring switching properties thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/327—Testing of circuit interrupters, switches or circuit-breakers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Keying Circuit Devices (AREA)

Abstract

The invention discloses a direct current breaker semiconductor assembly turn-off capability test loop with a protection function, belonging to the field of direct current breaker performance test devices. The device comprises a pre-charging unit, a test current generating unit, a thyristor triggering unit, a protection unit, a tested semiconductor component and an energy absorption unit. Wherein: the pre-charging unit and the test current generating unit are connected with an inductor L1 to form an LC oscillating circuit, so that test current is generated; the protection unit is connected with two ends of the main loop thyristor in an anti-parallel mode by using only one diode; the voltage overshoot born by the reactor due to the reverse recovery process of the thyristor can be limited; the energy absorption unit is a sliding resistor and is connected in parallel at two ends of the tested semiconductor component. The invention has the characteristic of testing the current turn-off capability of various semiconductor components, can prevent the insulation breakdown of the reactor caused by voltage overshoot, and effectively protects the reactor for testing.

Description

Direct current breaker semiconductor component turn-off capability test loop with protection function
Technical Field
The invention belongs to the field of direct current breaker performance testing devices, and particularly relates to a direct current breaker semiconductor assembly turn-off capability testing loop with a protection function.
Background
The hybrid direct current circuit breaker is one of important protection means for safe and reliable operation of a direct current system, and the semiconductor component is a basic core unit for breaking fault current of the hybrid direct current circuit breaker. The development of a semiconductor assembly turn-off test is the basis of a complete machine test of the hybrid direct current circuit breaker, is also a necessary link for evaluating turn-off capability and performance of the hybrid direct current circuit breaker, and no related standard test method and circuit exist at present. Aiming at the existing circuit for testing the turn-off capability of the semiconductor assembly of the hybrid direct current circuit breaker, the invention provides a circuit for testing the turn-off capability of the semiconductor assembly of the direct current circuit breaker with a protection function, and the protection unit is simple and reliable and can effectively prevent voltage overshoot caused by reverse recovery of a thyristor.
Disclosure of Invention
The invention aims to provide a direct current breaker semiconductor assembly turn-off capability test circuit with a protection function. Wherein: the pre-charging unit is formed by connecting a direct current power supply in series with a first mechanical switch S1; the test current generating unit is formed by connecting a resistor R1 in series with the second mechanical switch S2 and then connecting a capacitor C1 in parallel, and is connected with an inductor L1 to form an LC oscillating circuit, so that test current is generated; the protection unit is connected with two ends of the main loop thyristor in an anti-parallel mode by using only one diode; the voltage overshoot born by the reactor due to the reverse recovery process of the thyristor can be limited; the energy absorption unit is a sliding resistor and is connected in parallel with two ends of the semiconductor component to be tested; the semiconductor component to be tested comprises an IGBT direct-string structure, a diode full-bridge structure and an IGBT full-bridge structure.
The implementation process of the direct current breaker semiconductor assembly turn-off capability test loop comprises the following steps: before test, all mechanical switches and semiconductor devices in the circuit are in an off state; the method comprises the following specific steps:
A. when the test is started, the first mechanical switch S1 is firstly closed to charge the capacitor C1 of the test current generation unit, and after the test voltage requirement is met, the first mechanical switch S1 is opened;
B. the test current of the test current generation unit triggers a semiconductor device in the tested semiconductor assembly, and a test loop is conducted after 0.5 ms;
C. if the tested semiconductor component is a full-control device, the tested semiconductor component is turned off at the time t3 after a preset time delay; if the semiconductor component is a diode full bridge, the diode full bridge is shut off after bearing back pressure, at the moment, the current in the tested semiconductor component begins to rapidly drop, the voltage at two ends of the tested semiconductor component begins to rise to reach the action voltage of the energy absorption unit, and the energy absorption unit acts to absorb energy after the limiting type surge protection unit starts to act; if the semiconductor assembly is in an IGBT full-bridge or IGBT direct-series structure, an anti-parallel diode in the semiconductor assembly is turned off after bearing back pressure, at the moment, the current in the tested semiconductor assembly begins to rapidly drop, the voltage at two ends of the tested semiconductor assembly begins to rise, the action voltage of the energy absorption unit is reached, the limiting type surge protection unit acts, and the energy absorption unit begins to absorb energy;
D. after the energy absorption unit absorbs energy, the loop current is gradually reduced to zero, the diode of the protection unit is conducted, and the voltage overshoot in the reverse recovery process of the thyristor is limited;
E. after the test is completed, the second mechanical switch S2 is closed to discharge the capacitor C1.
The invention has the advantages that the protection unit is simple, and the semiconductor component to be tested with various structures such as an IGBT direct-string structure, a diode full-bridge structure and an IGBT full-bridge structure can be tested; the protection unit can limit voltage overshoot borne by the reactor due to the reverse recovery process of the thyristor; the invention has the characteristic of testing the current turn-off capability of various semiconductor components, can prevent the insulation breakdown of the reactor caused by voltage overshoot, and effectively protects the reactor for testing.
Drawings
FIG. 1 is a block diagram of a turn-off capability test loop of a semiconductor device.
Fig. 2 is a schematic diagram of the specific test loop of fig. 1.
Fig. 3 shows types of semiconductor devices under test, in which (a) is an IGBT direct-string structure, (b) is an IGBT full-bridge structure, and (c) is a diode full-bridge structure.
Fig. 4 is a flow chart of the semiconductor device turn-off capability test.
FIG. 5 is a timing diagram illustrating the turn-off capability test of the semiconductor device.
Fig. 6 shows a simulation result of a current turn-off test of a semiconductor device, where a is an IGBT string device and b is an IGBT full-bridge device.
Fig. 7 is a graph comparing the voltage overshoot prevention effect of the protection unit, wherein (a) the voltage overshoot of the protection unit is not added, and (b) the improvement effect is improved.
Detailed Description
The invention provides a circuit for testing the turn-off capability of a semiconductor component of a direct current circuit breaker with a protection function, which is described in the following with reference to the attached drawings and embodiments.
Fig. 1 is a block diagram of a turn-off capability test circuit of a semiconductor module of a high-voltage dc circuit breaker with a protection function, the test circuit including: the device comprises a pre-charging unit 1, a test current generating unit 2, a thyristor triggering unit 3, a protection unit 4, a tested semiconductor component 5 and an energy absorption unit 6; fig. 2 shows a schematic diagram of the specific test loop of fig. 1. In the figure, the pre-charging unit 1 is composed of a DC power supply connected in series with a first mechanical switch S1; the test current generating unit 2 is formed by connecting a resistor R1 in series with the second mechanical switch S2 and then connecting the capacitor C1 in parallel, and is connected with an inductor L1 to form an LC oscillating circuit, so that test current is generated; the protection unit 4 is connected with two ends of a main loop thyristor of the thyristor trigger unit 3 in an anti-parallel mode by using only one diode; the voltage overshoot born by the reactor due to the reverse recovery process of the thyristor can be limited; the energy absorption unit 6 is a sliding resistor and is connected in parallel at two ends of the semiconductor component 5 to be tested; the semiconductor device under test includes: a is an IGBT direct string structure, b is an IGBT full bridge structure, and c is a diode full bridge structure (as shown in fig. 3).
FIG. 4 is a flowchart illustrating a turn-off capability test of a semiconductor device, and FIG. 5 is a timing chart illustrating a turn-off capability test of a semiconductor device. The implementation process of the direct current breaker semiconductor assembly turn-off capability test loop comprises the following steps: before the test, all mechanical switches and semiconductor devices in the circuit are in an off state; the method comprises the following specific steps:
A. when the test is started, the first mechanical switch S1 is closed firstly, the capacitor C1 of the test current generating unit is charged, the requirement of the charging voltage preset by the capacitor C1 in the LC oscillating circuit is met, and the first mechanical switch S1 is disconnected after the main loop large current with a certain peak value is generated;
B. triggering a semiconductor device in the tested semiconductor assembly at the time t1, triggering a thyristor at the time t2 after 0.5ms, conducting a test loop, and continuing a conducting signal for 0.5 ms;
C. if the semiconductor component is a fully-controlled device, after a preset time delay of 3ms, the semiconductor component to be tested is turned off at the time t 3; the anti-parallel diode in the semiconductor component is turned off after bearing the back voltage, at the moment, the current in the tested semiconductor component begins to rapidly drop, the voltage at two ends of the tested semiconductor component begins to rise, the action voltage of the energy absorption unit is reached, the limiting type surge protection unit acts, and the energy absorption unit begins to absorb energy;
D. after the energy absorption unit absorbs energy, the loop current is gradually reduced to zero, and the diode of the protection unit is conducted to limit the voltage overshoot in the reverse recovery process of the thyristor;
E. after the test is completed, the second mechanical switch S2 is closed to discharge the capacitor C1.
In the process of testing, the current turn-off transient characteristics of different component topologies are different. Fig. 5 shows the simulation results of the current turn-off test of the IGBT direct-string component and the IGBT full-bridge component.
uL1Representing the voltage across the reactor, usmRepresenting the voltage across the component, imainRepresenting the test loop current. For IGBT direct string assembly, imainWhen the voltage drops to 0, a voltage overshoot caused by a thyristor reverse recovery process appears obviously at two ends of the reactor (as shown in fig. 6 a); for the IGBT full-bridge component, a significant oscillation phenomenon occurs (as shown in fig. 6 b).
The test result also shows that for the IGBT straight string component, obvious voltage overshoot exists at the two ends of the reactor after the switching-off is finished, the peak value of the voltage overshoot is 4.3kV, and the rising rate is about 0.55 kV/mu s (as shown in figure 7 (a)). The voltage overshoot can destroy the insulation of the turn-to-turn winding of the reactor to influence the inductance value; the diode is connected in anti-parallel at the two ends of the thyristor, and when the voltage at the two ends of the thyristor exceeds the on-state voltage drop of the diode, the diode is conducted, so that voltage overshoot is avoided; after improvement, the voltage across the reactor is over-charged and is obviously reduced (as shown in fig. 7 (b)), and the voltage is less than 200V, and at this time, if the lightning arrester is connected to the diode in parallel, the lightning arrester will not act.

Claims (1)

1. A semiconductor assembly turn-off capability test method of a direct current breaker semiconductor assembly turn-off capability test loop with a protection function comprises a pre-charging unit, a test current generating unit, a thyristor triggering unit, a protection unit, a tested semiconductor assembly and an energy absorption unit; the pre-charging unit is formed by connecting a direct current power supply in series with a first mechanical switch S1; the test current generating unit is formed by connecting a resistor R1 in series with the second mechanical switch S2 and then connecting a capacitor C1 in parallel, and is connected with an inductor L1 to form an LC oscillating circuit, so that test current is generated; the protection unit is connected with two ends of the main loop thyristor in an anti-parallel mode by using only one diode; the voltage overshoot born by the reactor due to the reverse recovery process of the thyristor can be limited; the energy absorption unit is a sliding resistor and is connected in parallel with two ends of the semiconductor component to be tested; the tested semiconductor component comprises an IGBT direct-string structure, a diode full-bridge structure and an IGBT full-bridge structure; the implementation process of the direct current breaker semiconductor assembly turn-off capability test loop is characterized by comprising the following steps: before test, all mechanical switches and semiconductor devices in the circuit are in an off state; the method comprises the following specific steps:
A. when the test is started, the first mechanical switch S1 is firstly closed to charge the capacitor C1 of the test current generation unit, and after the test voltage requirement is met, the first mechanical switch S1 is opened;
B. the test current of the test current generation unit triggers a semiconductor device in the tested semiconductor assembly, and a test loop is conducted after 0.5 ms;
C. if the tested semiconductor component is a full-control device, the tested semiconductor component is turned off at the time t3 after a preset time delay; if the semiconductor component is a diode full bridge, the diode full bridge is shut off after bearing back pressure, at the moment, the current in the tested semiconductor component begins to rapidly drop, the voltage at two ends of the tested semiconductor component begins to rise to reach the action voltage of the energy absorption unit, and the energy absorption unit acts to absorb energy after the limiting type surge protection unit starts to act; if the semiconductor assembly is in an IGBT full-bridge or IGBT direct-series structure, an anti-parallel diode in the semiconductor assembly is turned off after bearing back pressure, at the moment, the current in the tested semiconductor assembly begins to rapidly drop, the voltage at two ends of the tested semiconductor assembly begins to rise, the action voltage of the energy absorption unit is reached, the limiting type surge protection unit acts, and the energy absorption unit begins to absorb energy;
D. after the energy absorption unit absorbs energy, the loop current is gradually reduced to zero, the diode of the protection unit is conducted, and the voltage overshoot in the reverse recovery process of the thyristor is limited;
E. after the test is completed, the second mechanical switch S2 is closed to discharge the capacitor C1.
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CN110376515B (en) * 2019-07-10 2021-11-23 中国南方电网有限责任公司超高压输电公司检修试验中心 DC high-speed switch DC air charging current on-off test method
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CN113156289B (en) * 2020-12-18 2022-11-11 国网辽宁省电力有限公司经济技术研究院 High-precision testing device and method for reverse recovery current of non-fully-controlled semiconductor device
US11747390B2 (en) 2021-01-15 2023-09-05 Innoscience (Suzhou) Technology Co., Ltd. Apparatus and method for measuring dynamic on-resistance of GaN-based device
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CN108196177A (en) * 2017-12-26 2018-06-22 华北电力大学 A kind of semiconductor subassembly Performance Test System
CN109586264A (en) * 2018-12-14 2019-04-05 华北电力大学 A kind of high voltage DC breaker semiconductor component protection circuit

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CN108169666A (en) * 2017-12-26 2018-06-15 华北电力大学 A kind of high current turn-off characteristic test device
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