CN113156289B - High-precision testing device and method for reverse recovery current of non-fully-controlled semiconductor device - Google Patents
High-precision testing device and method for reverse recovery current of non-fully-controlled semiconductor device Download PDFInfo
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- CN113156289B CN113156289B CN202011503945.7A CN202011503945A CN113156289B CN 113156289 B CN113156289 B CN 113156289B CN 202011503945 A CN202011503945 A CN 202011503945A CN 113156289 B CN113156289 B CN 113156289B
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Abstract
The invention discloses a high-precision testing device and method for reverse recovery current of a non-fully-controlled semiconductor device, which comprises a capacitor C m An inductance element L m The device comprises a tested non-fully-controlled semiconductor device, a diode, a 1 st semiconductor device T1, a 2 nd semiconductor device T2 and a high-precision coaxial resistor. Capacitor C m And an inductance element L m Are connected in series to form an LC series branch; the tested non-fully controlled semiconductor device and the diode form a tested non-fully controlled semiconductor device branch; the 1 st semiconductor device T1 and high accuracy coaxial resistance establish ties and constitute reverse current test branch road, and 2 nd semiconductor device T2 constitutes forward conduction branch road, and the device adopts two branch road structures, has both satisfied the device test to the requirement of forward current peak value, can realize again the accurate test to reverse recovery current.
Description
Technical Field
The invention relates to high-precision current testing equipment, in particular to a device and a method for testing reverse recovery current of a non-fully-controlled semiconductor device at high precision.
Background
The semiconductor device is an important component of a current new energy power system, and key electrical equipment such as a converter valve, a reactive compensation device, a direct current breaker and the like is composed of a large number of semiconductor devices. Transient switching-off of the semiconductor device brings a series of voltage overshoots, electromagnetic interference such as oscillation and the like and remarkable energy loss, and equipment performance is affected. Therefore, it is necessary to study the transient turn-off characteristics of the semiconductor device, especially the reverse recovery characteristics of the turn-off process of the device. However, for the reverse recovery characteristics of the non-fully-controlled semiconductor devices, such as diodes and thyristors, the conventional method is adoptedLCWhen the oscillating circuit is tested, in order to be capable of meeting actual working conditions, the forward current peak value is usually far larger than the reverse recovery current peak value. For a high-precision current testing device, the testing precision is often low when the device has a large measuring range, and how to ensure the precision of the small current test while considering the large measuring range is an urgent problem to be solved to obtain the precise reverse recovery characteristic of the non-fully-controlled semiconductor device.
Disclosure of Invention
The invention aims to provide a high-precision testing device and a high-precision testing method for reverse recovery current of a non-fully-controlled semiconductor device, which not only meet the requirement of device testing on the forward current peak value, but also can realize the precise testing on the reverse recovery current.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
the high-precision testing device for the reverse recovery current of the non-fully-controlled semiconductor device comprises a capacitor C m An inductance element L m A tested non-fully-controlled semiconductor device, a diode, a 1 st semiconductor device T1, a 2 nd semiconductor device T2 and a high-precision coaxial resistor, wherein the capacitor C m And an inductance element L m Are connected in series to form an LC series branch; the emitter of the tested non-fully-controlled semiconductor device is connected with the input end of the diode, and the collector of the tested non-fully-controlled semiconductor deviceThe electrode is connected with the output end of the diode to form a tested non-fully-controlled semiconductor device branch; the device comprises a 1 st semiconductor device T1, a 2 nd semiconductor device T2, an LC series branch, a tested non-fully-controlled semiconductor device branch, a reverse current testing branch, a forward conducting branch, a closed loop and a control circuit, wherein the 1 st semiconductor device T1 and the high-precision coaxial resistor are connected in series to form the reverse current testing branch, the 2 nd semiconductor device T2 forms the forward conducting branch, the LC series branch and the tested non-fully-controlled semiconductor device branch are sequentially connected in series, and the reverse current testing branch and the forward conducting branch are connected in parallel and then connected into a series circuit of the LC series branch and the tested non-fully-controlled semiconductor device branch.
The testing method of the non-fully-controlled semiconductor device reverse recovery current high-precision testing device comprises the following steps of:
(1) first, the capacitor is charged toU ch Providing electric energy for the circuit and keeping the tested non-fully-controlled semiconductor device in a trigger state;
(2) trigger T 2 Conducting, and enabling current to pass through the forward conducting branch;
(3) Δ passingt 1 After time, when the current is close to the first passing point, T is turned off 2 ；
(4) At this time T 2 Is turned off and turned on T 1 Electric current ofiAnd transferring to a reverse current test branch until the test is finished.
After the 1 st semiconductor device T1 is conducted and switched to the reverse current test branch circuit, reverse recovery current is generated, and the reverse recovery current generates downward spikes.
The invention has the advantages and beneficial effects that:
when the tested non-fully-controlled semiconductor device is converted from forward conduction to external negative voltage and is cut off, the stored minority carriers need a certain time to disappear, the time is the reverse recovery time of the semiconductor device, and the current formed in the semiconductor in the time is the reverse recovery current of the semiconductor device. Therefore, the current flowing through the coaxial resistor is extremely small, the coaxial resistor in a small range can be adopted, and the test precision of the small-range coaxial resistor is higher.
The capacitor is charged firstly by adopting a double-branch structure, a large forward current flow process and a small current reverse recovery process respectively flow through two different branches through a non-fully-controlled semiconductor device, and a small-range high-precision coaxial resistor is matched for testing, so that the requirement of device testing on a forward current peak value is met, and the accurate testing on reverse recovery current can be realized.
Drawings
The invention is described in detail below with reference to the following figures and examples:
FIG. 1 is a block diagram of a testing circuit of a high-precision testing device for reverse recovery current of a non-fully controlled semiconductor device according to the present invention;
FIG. 2 is a schematic circuit diagram of a high-precision testing device for reverse recovery current of a non-fully-controlled semiconductor device according to the present invention;
FIG. 3 is a timing diagram of the high-precision testing method for reverse recovery current of the non-fully-controlled semiconductor device according to the present invention;
FIG. 4 is a schematic current waveform diagram of the method for high-precision testing of reverse recovery current of a non-fully-controlled semiconductor device according to the present invention.
Detailed Description
In order to further illustrate the present invention, the following detailed description of the present invention is made with reference to the accompanying drawings and examples, which should not be construed as limiting the scope of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in FIGS. 1 and 2, the high-precision testing system for reverse recovery current of non-fully-controlled semiconductor device of the present invention comprises a capacitor C m An inductance element L m A tested non-fully-controlled semiconductor device 1, a diode 3, a 1 st semiconductor device T1, a 2 nd semiconductor device T2 and a high-precision coaxial resistor 2, wherein the capacitor C m And an inductance element L m Are connected in series to form an LC series branch; the emitter of the tested non-fully-controlled semiconductor device 1 is connected with the input end of the diode, and the collector of the tested non-fully-controlled semiconductor device is connected with the output end of the diode to form a tested non-fully-controlled semiconductor deviceA semiconductor device branch circuit; the 1 st semiconductor device T1 and the high-precision coaxial resistor 2 are connected in series to form a reverse current testing branch, the 2 nd semiconductor device T2 forms a forward conducting branch, the LC series branch and the tested non-fully-controlled semiconductor device branch are sequentially connected in series, and the reverse current testing branch and the forward conducting branch are connected in parallel and then connected into a series circuit of the LC series branch and the tested non-fully-controlled semiconductor device branch to form a closed loop. The tested non-fully-controlled semiconductor device branch is used for generating analog current according to the power supply; the forward conducting branch is used for conducting forward current; the reverse current test branch is used for conducting reverse current. The reverse recovery characteristic test circuit with adjustable reverse voltage comprises: the device comprises an LC series branch, a tested non-fully-controlled semiconductor device, a reverse current testing branch and a forward conducting branch. The LC series branch provides power for the circuit; forward conducting branch through T 2 Control to conduct forward current and reverse current test branch circuit through T 1 And controlling to conduct reverse current.
The test method of the non-fully-controlled semiconductor device reverse recovery current high-precision test system comprises the following steps:
(1) first, the capacitor is charged toU ch And the power supply circuit supplies power to the circuit and keeps the tested non-fully-controlled semiconductor device in a trigger state.
(2) Trigger T 2 And conducting, and passing current through the forward conducting branch. When the current passes through the forward conducting branch and the tested non-fully controlled semiconductor device is conducted by applying forward voltage, the tested non-fully controlled semiconductor pn junction has the accumulation of unbalanced minority carriers, so that the charge storage effect is formed.
(3) Δ passingt 1 After time, when the current is close to the first passing point, T is turned off 2 。
(4) At this time T 2 Is turned off and turned on T 1 Electric current ofiAnd transferring to a reverse current test branch until the test is finished. T is 1 And T 2 In switching, as shown in fig. 3, the curve of the timing diagram changes abruptly.
When the tested non-fully-controlled semiconductor device is switched from positive conduction to external negative voltage and is cut off, the stored minority carriers need a certain time to disappear, the time is the reverse recovery time of the tested non-fully-controlled semiconductor device, and the current formed in the tested non-fully-controlled semiconductor device in the time is the reverse recovery current of the tested non-fully-controlled semiconductor device, so that the current flowing through the high-precision coaxial resistor is extremely small, the reverse current testing branch circuit is matched with the small-range high-precision coaxial resistor for testing, and the test precision of the small-range coaxial resistor is higher.
From T due to circuit conduction 2 Is changed into T 1 The original follow current path does not exist, the energy of the inductor exists in the form of magnetic energy, and the circuit is completely powered by the capacitor.
As shown in fig. 4, the original freewheeling path is up, the inductor is charged after switching, the capacitor is charged, and the reverse recovery current will spike downward.
Therefore, the large forward current through-flow process and the small current reverse recovery process respectively flow through two different branches, and the small-range high-precision coaxial resistor is used for testing in a matched manner, so that the requirement of device testing on a forward current peak value is met, and the reverse recovery current can be accurately tested.
Although the present invention has been described with reference to the preferred embodiments, it should be understood that various changes and modifications can be made therein by those skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (1)
1. Non-full control type semiconductor device reverse recovery electric current high accuracy testing arrangement which characterized in that: comprising a capacitor C m An inductance element L m A tested non-fully-controlled semiconductor device 1, a diode 3, a 1 st semiconductor device T1, a 2 nd semiconductor device T2 and a high-precision coaxial resistor 2, wherein the capacitor C m And an inductance element L m Are connected in series to form an LC series branch; the emitter of the tested non-fully-controlled semiconductor device 1 is connected with the input end of the diode, and the tested non-fully-controlled semiconductor device is connected with the input end of the diodeThe collector of the full-control semiconductor device is connected with the output end of the diode to form a tested non-full-control semiconductor device branch; the 1 st semiconductor device T1 and the high-precision coaxial resistor 2 are connected in series to form a reverse current testing branch, the 2 nd semiconductor device T2 forms a forward conducting branch, the LC series branch and the tested non-fully-controlled semiconductor device branch are sequentially connected in series, and the reverse current testing branch and the forward conducting branch are connected in parallel and then are connected into a series circuit of the LC series branch and the tested non-fully-controlled semiconductor device branch to form a closed loop;
after the 1 st semiconductor device T1 is conducted and switched to the reverse current testing branch circuit, reverse recovery current is generated, and downward peak is generated by the reverse recovery current;
the test method of the high-precision test device for the reverse recovery current of the non-fully-controlled semiconductor device is characterized by comprising the following steps of:
(1) first, the capacitor is charged to U ch Providing electric energy for the circuit and keeping the tested non-fully-controlled semiconductor device in a trigger state;
(2) triggering the 2 nd semiconductor device T 2 Conducting, and enabling current to pass through the forward conducting branch;
(3) passing by Δ t 1 After time, when the current is close to the first passing point, T is turned off 2 ；
(4) At this time, the 2 nd semiconductor device T 2 Is turned off to turn on the 1 st semiconductor device T 1 And the current i is transferred to the reverse current test branch until the test is finished.
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