CN110268531A - The manufacturing method of solar battery and solar battery - Google Patents
The manufacturing method of solar battery and solar battery Download PDFInfo
- Publication number
- CN110268531A CN110268531A CN201780081471.1A CN201780081471A CN110268531A CN 110268531 A CN110268531 A CN 110268531A CN 201780081471 A CN201780081471 A CN 201780081471A CN 110268531 A CN110268531 A CN 110268531A
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- China
- Prior art keywords
- finger electrode
- fixed strip
- solar battery
- insulating film
- battery according
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000011521 glass Substances 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 19
- 238000001354 calcination Methods 0.000 claims abstract description 18
- 229910052709 silver Inorganic materials 0.000 claims abstract description 18
- 239000004332 silver Substances 0.000 claims abstract description 18
- 230000000694 effects Effects 0.000 claims abstract description 10
- 238000003466 welding Methods 0.000 claims description 22
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 20
- 229910000679 solder Inorganic materials 0.000 claims description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 16
- 239000004411 aluminium Substances 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052742 iron Inorganic materials 0.000 claims description 10
- 238000005476 soldering Methods 0.000 claims description 10
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 9
- 239000011701 zinc Substances 0.000 claims description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052718 tin Inorganic materials 0.000 claims description 8
- 229910052725 zinc Inorganic materials 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 4
- 239000000654 additive Substances 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 3
- 229910052788 barium Inorganic materials 0.000 claims description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 3
- -1 Yi Jixi Chemical compound 0.000 claims description 2
- 239000011135 tin Substances 0.000 claims description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 2
- 239000011787 zinc oxide Substances 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 description 18
- 238000010422 painting Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 11
- 239000000203 mixture Substances 0.000 description 8
- 239000005355 lead glass Substances 0.000 description 7
- 230000006978 adaptation Effects 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008034 disappearance Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000000935 solvent evaporation Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- LWUVWAREOOAHDW-UHFFFAOYSA-N lead silver Chemical compound [Ag].[Pb] LWUVWAREOOAHDW-UHFFFAOYSA-N 0.000 description 1
- 239000000075 oxide glass Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- WQEVDHBJGNOKKO-UHFFFAOYSA-K vanadic acid Chemical compound O[V](O)(O)=O WQEVDHBJGNOKKO-UHFFFAOYSA-K 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
- H01L23/4924—Bases or plates or solder therefor characterised by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Manufacturing & Machinery (AREA)
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- Electrodes Of Semiconductors (AREA)
Abstract
The present invention relates to the manufacturing methods of solar battery and solar battery, its object is to which the top of finger electrode (5) will be connected to as the belt-like strip of external terminal (7) directly to reduce resistance components, and improve the efficiency of solar battery.The finger electrode (5) containing silver and lead is formed on insulating film (3), and by the part of finger electrode (5) or possesses the part of ampleness and be set as being open and be calcined after forming fixed strip (6) on insulating film (3), the effect of the silver and lead that contain in finger electrode (5) when using calcination penetrates through the insulating film (3) of the film belonged under the finger electrode (5) and forms conductive vias between the region of high electron concentration and finger electrode (5) in that can generate when substrate, which is taken in, the irradiation such as light, and it utilizes the effect of the glass material contained in fixed strip (6) to be formed simultaneously in calcination and is bonded to insulating film (3) and the good fixed strip of weldability (6) securely.
Description
Technical field
The present invention relates to the regions that high electron concentration can be generated whens producing irradiation light etc. on substrate, and on region
The insulating film penetrated for light etc. is formed, then forms finger electrode on insulating film, is used to take out electricity from the region to be formed
The outlet of son, and have for multiple finger electrodes to be electrically connected and be replaced in the past so that electronics is fetched into external fixed strip
Busbar (bus bar) solar battery of electrode and the manufacturing method of solar battery.
Background technique
In the past, for the design of solar battery cell (cell), how to make the electricity generated in solar battery cell
It is extremely important that son, which efficiently flows to connected external circuit,.Make to be connected to external portion from unit in order to reach this purpose
Point resistance components reduce and electronics caused by making will not disappear it is particularly important.
Therefore, there is a kind of the present inventor it is proposed that crossing the technology of application, be the vanadic acid that will belong to conductive glass
Salt glass makes to connect between finger electrode and the band (ribbon) (lead) of outside taking-up for bus bar electrode
Resistance value reduces, and makes technology (the Japanese Patent Application 2016-015873, day of the disappearance reduction for the electronics for being collected to bus bar electrode
This Patent 2015-180720).
Summary of the invention
(the invention project to be solved)
However, above-mentioned known conductive glass is used in bus bar electrode and makes finger electrode and external taking-up
The resistance value of connection between band (lead) reduces, and make the electronics for being collected to bus bar electrode disappearance reduction scheme simultaneously
It is insufficient, the good no dependence of the calcination process for conductive glass must be also reduced, and allow for applying flexibly one
As material come into Yi Walk improve and reach efficient project.
In addition, also there is the class of the construction and its manufacturing method that must have low cost and efficient solar battery cell
Topic.
In addition, there are also the usage amounts for the silver for eliminating or reducing known high price, and eliminates or reduce lead (lead glass)
Usage amount, and reduce the manufacturing cost of solar battery more and non-harmful project.
In addition, also there is the substrate that may not proceed sufficiently simple and certain and low cost and firmly weld solar battery
Back side terminal project.
(means to solve the problem)
Inventors have seen that the situation on insulating film is exposed on the top of finger electrode, and if finding directly to
Not only resistance components will be become if the top for the finger electrode that band-like band as external terminal is connected to the exposing
Reduce and the reduced composition etc. of leakage of electronics.
Therefore, it uses with following constructions: reducing the resistance components between finger electrode and external terminal, and use
Cheap material is solid to be formed come the expensive material of the silver, the conductive glass that substitute the previous material as bus bar electrode etc.
Determine item and firmly fix external terminal, and the construction that the leakage for being set as low resistance and electronics is few, and high efficiency and low can be manufactured
The solar battery of cost.
Moreover, certainly the substrate that connection terminal is welded to solar battery can be carried on the back securely and with cheap material
Side.
Therefore, the present inventor, which is directed to, is forming the area that high electron concentration can be generated when there is light etc. to irradiate on substrate
Domain and the insulating film that penetrates for light etc. is formed on region, and formed on insulating film as taking out electronics from region
The finger electrode of outlet, and electronics is fetched into external solar battery via the finger electrode, in the solar battery
In, form the finger electrode containing silver and lead on insulating film, and by the part of finger electrode or possess the part of ampleness and be set as
It is open and is calcined after formation fixed strip on insulating film, utilize the work of the silver and lead that contain in aforementioned finger electrode when calcination
Conductive vias is formed between region and the finger electrode with the insulating film for penetrating through the film belonged under finger electrode, and is being forged
It is bonded to insulating film securely using the effect formation of the glass material contained in fixed strip simultaneously when burning and weldability is good
Fixed strip.
Wherein, glass material is used containing above vanadate glass any in vanadium and barium, Yi Jixi, zinc or its oxide
Glass.
In addition, burning the former with the latter in the temperature of (fire-through) finger electrode and the temperature of formation fixed strip
It is equal or the former is higher than the latter, and be calcined with the former temperature.
In addition, 60 seconds or less calcination progress 1 second or more.
Error institute in addition, the part for possessing ampleness is set as being open, when being by formation because of finger electrode and fixed strip
Caused by the part of given width that influences to become smaller be set as being open.
In addition, the part for possessing ampleness is set as being open, it is set to welding external terminal in a manner of ultrasonic bonding
The opening equal or slightly narrow with the contact portion of the front end of ultrasonic wave soldering iron when on to finger electrode and fixed strip, and make front end
Contact portion will not directly contact insulating film.
In addition, external terminal to be soldered to the solder of finger electrode and fixed strip, contain tin, the oxide of tin, zinc, zinc
It is more than at least one of oxide.
In addition, solder is optionally added with one or more of copper, silver as additive.
It is ultrasonic bonding in addition, external terminal to be soldered to the welding of finger electrode and fixed strip.
In addition, external terminal is band-like band (ribbon).
In addition, in the whole of the substrate back side opposite with the table side for being equipped with region, insulating film, finger electrode and fixed strip
Face forms aluminium film, and by the welding of the external terminal of back side or ultrasonic bonding in aluminium film.
In addition, the external terminal about back side, the back side corresponding to the position roughly the same with the fixed strip of table side
Position or arbitrary position in aluminium film form fixed strip and are calcined, then the external terminal welding by back side or ultrasonic wave
It is welded on the fixed strip.
(The effect of invention)
The present invention in the composition that the top of finger electrode exposes on oxidation film as described above, make the top of finger electrode
It is directly electrically connected with the band-like band as external terminal, therefore becomes the few composition of resistance components, and become high efficiency
Solar battery.
In addition, welding (or ultrasonic bonding etc.) as solder using tin (or its oxide) and zinc (or its oxide) etc.
Oxidation film, fixed strip, band these three the case where when, the welding adaptation of the fixed strip is good, so can generate keeps finger-like electric
The effect of the zygosity of pole and band steadily long lifetime.
In addition, the composition relative to the previous bus bar electrode being made of ag material and conductive glass etc. is (quite
In fixed strip of the invention), cost can significantly be cut down using cheap material.
In addition, can reduce it is previous using kupper solder as the lead usage amount in the solar battery of mainstream, and can planning and designing
The processing procedure (process) friendly for environment.
In addition, can be used cheap material certainly connection terminal is welded in securely solar battery substrate back
Side.
Specific embodiment
(embodiment 1)
Fig. 1 to 3 shows that one embodiment of the invention constitutes figure.
In Fig. 1 to 3, nitride film 3 is formed in the insulating film on substrate (chip) 1.
Finger electrode 5 be by nitride film 3 print silver, lead (lead glass) paste (paste) then be sintered, and
The nitride film 3 is broken through using known burn-through and conductive path is formed between high concentration electric subregion at it, it will be electric
Son is fetched into external (being described in detail hereinafter).
Fixed strip 6 is arranged in the present invention, the part of finger electrode 5 is set as being open, and be firmly fixed at nitride film
3, and be used to carry out the welding of external terminal (band-like band) well, and make the electronics taken out from finger electrode 5
Leakage reduce etc. (hereinafter be described in detail).
Fixed strip area 61 is to form the region (being described in detail hereinafter) of fixed strip 6.
Fig. 1 shows the partial enlargement diagram example of the finger electrode 5 and fixed strip 6 watched above chip.
In fig. 1 it is illustrated that rectangle substrate (silicon substrate, chip) be experiment used in.Substrate used herein
The size for being rectangle is the substrate of 48mm (numerical value is an example).
Finger electrode 5 as shown, is mutually to be equipped with across predetermined distance in transverse direction multiple in this instance, and is sintered
And forms conductive path (hereinafter detailed description) between high concentration electric subregion at it using burning.
Shown in fixed strip area 61 dotted line as shown, towards vertical direction with set width after the formation of finger electrode 5
The region for the fixed strip 6 stated.
Fig. 2 shows the partial enlargement diagram example of the finger electrode 5 and fixed strip 6 watched above chip.
In Fig. 2, fixed strip 6 is formed at the fixation strip area 61 of Fig. 1, herein as shown, by the part of finger electrode 5
It is set as being open and being equipped with multiple band-like portions.Herein, as shown in for example, equipped with multiple width be 2.0mm, length be 1.2mm and
The band-like portions that opening between finger electrode 5 is 0.5mm or so.The formation of this fixed strip 6 is carried out, so with screen painting
After be sintered and so that it is bonded to nitride film 3 securely and keep weldability good (being described in detail hereinafter).
Fig. 3 shows the partial enlargement schematic section legend of the finger electrode 5 and fixed strip 6 watched from wafer side.
In Fig. 3, finger electrode 5 is printed off and then is sintered with screen painting, under being broken through as shown using burn-through
The nitride film 3 of layer and form conductive path between following high concentration electric subregion at it, and it is rectangular upward as shown
At the normally about protruding portion of 40nm using as top (head) (hereinafter be described in detail).
Fixed strip 6 employed in the present invention, be the paste containing vanadate glass is printed in a manner of screen painting, and with finger
Carrying out heating when the sintering of shape electrode 5 simultaneously makes it melt and it is made to be bonded to nitride film 3 securely, and forms its surface
To be easy the state (being described in detail hereinafter) welded.This fixed strip 6 is preferably provided with high electric insulating quality, this is to make in band
The electronics of flowing will not leak into the event such as substrate.Preferably it is adjusted to (the paste containing vanadate glass when adjustment screen painting
Concentration etc.) so that fixed strip 6 is formed as lower than the height (being herein about 40nm) on the top (head) of finger electrode 5 as shown
Height (being herein about 20nm).It is fully welded when the band 7 that thus can be illustrated in welding (preferably ultrasonic bonding)
Be connected into covering finger electrode 5 top (head) part and reduce contact resistance and enhancing mechanical strength (even if band 7 by
It will not be detached to pullling).
Experiment exists
The width of fixed strip 6: 2mm
The length of the front end of ultrasonic wave soldering iron: 2mm
The width of the front end of ultrasonic wave soldering iron: when the case where 2mm, by the interval (length of finger electrode 5 and fixed strip 6
The interval in direction) it is set as:
The upper limit will not be longer than the length of the direction of action of soldering iron front end (above-mentioned example is 2mm), makes soldering iron front end not
The nitride film 3 that lower section can be touched waits and damages and (determine this upper limit with experiment).
Lower limit will not make solder sloping portion shown in Fig. 3 too steep, and within screen painting pairing precision, make to weld
Material will not break and (determine this lower limit with experiment).
In addition, finger electrode 5 and the width of fixed strip 6 are set as:
The upper limit is the width (width of fixed strip 6) of band.
Lower limit is 0.8 times or so of the upper limit.
In addition, the power of ultrasonic bonding is set as the degree of 2W.Power is too big, and to damage N+ emitter-base bandgap grading (emitter) (highly concentrated
Spend electronics regions), too small, being unable to get welding adaptation, (that welds adaptation is defined as 0.2N or more, sets in the present invention
For 0.5N or more), so to determine most suitable W value (due to because of ultrasonic wave soldering iron (length, width of front end etc.) to test
And it is different, therefore determined with testing).
Herein, important document band (external terminal) and fixed strip 6 and finger electrode 5 welded, be must make its with
Finger electrode 5 (silver), the adaptation of fixed strip 6 (vanadate glass) are good.
For meeting the solder of above-mentioned important document, using the alloy of tin and zinc, the alloy of tin and copper, tin and silver-colored alloy
Deng.
Surpassing when band (being attached with solder) is soldered to fixed strip 6 and finger electrode 5 in a manner of ultrasonic bonding
Sound wave output such as the above-mentioned degree for 2W.It is not necessarily to make the temperature of temperature height to necessity or more with ultrasonic bonding.Moreover, can not
Performance with the temperature of the nonuseable part other than welding region is increased, caused by can preventing the useless temperature because of surrounding from rising
Deterioration.
Band (external terminal) is the wire rod of the material centered on copper, and covers its outside with solder and (be attached with
Solder).
The welding of the back side of substrate (chip) is the whole face plating aluminium film in the back side of the substrate, so directly by item
Welding just carries out the ultrasonic bonding of band on it or after formation fixed strip 6 same as above.
When using tin, zinc etc. as the case where main body of solder, if expection has black brittleness, in order to avoid this situation
Optionally add additive (copper, silver etc.) (becoming alloy after addition).
In addition, the formation of fixed strip 6, in an experiment are as follows:
The paste based on vanadate glass is used, screen painting is carried out and is then sintered and is formed.
Material example: vanadium, barium, (tin or zinc or both (or described oxide)) glass paste.
It outlines: making all material melting and then rapid cooling and generate vanadate glass, then be ground into powder
Then end is made vanadate glass paste.It is pasted using this and carries out screen painting and form fixed strip 6 and then be sintered, formed last
Fixed strip 6.
The formation important document of this fixed strip 6 are as follows:
(1) good with the adaptation of the solder used
(2) electric insulating quality is good
It is (3) good with the adaptation of nitride film 3,
Determine to meet the thickness of the material of the above important document, screen painting and sintering temperature etc. to test.
Then, the process for the composition of Fig. 1 to 3 being successively described in detail according to the process flow of Fig. 4 to 7.
Fig. 4 to 7 shows process flow of the invention.
In Fig. 4, S1 is to prepare silicon substrate (tetravalence).This step is that preparation will be as the substrate (tetravalence) of solar battery
Chip.
S2 is the substrate 1 for producing p-type (trivalent).This step makes boron etc. diffuse in the silicon substrate (tetravalence) of S1 and become
P-type (trivalent).
S3 is that phosphorus (pentavalent) is made to spread and make N+ type on surface.In this way, high concentration electric subregion (N+ type) can be produced.
In Fig. 5, S4 is to form nitride film 3 on the region N+ (high electron concentration region) of the table side of substrate 1.Nitride film 3
The usually thickness of the degree of 60nm.The region N+ (high electron concentration region) is protected using nitride film 3 as a result,.
In addition, forming aluminium film 4 in a manner of being deposited, sputter etc. in the back side of substrate 1 in S4.Aluminium film 4 is as solar energy
The part of the electrode of the back side of battery.
S5 is the printing for carrying out finger electrode.This step is to carry out screen painting using the paste being made of silver, lead glass,
To print off the shape of the finger electrode 5 in Fig. 1 above-mentioned to 3.
S6 is to carry out solvent evaporation.This step is the heating that one hour or so is carried out at 100 to 120 DEG C, by screen painting
Paste in the solvent that contains completely remove.
The S7 of Fig. 6 is the printing that item 6 is fixed.This step is to carry out halftone print using the paste containing vanadate glass
Brush, to print off the shape of the fixed strip 6 in Fig. 1 above-mentioned to 3.
S8 is the solvent evaporation that item is fixed.This step is the heating that one hour or so is carried out at 100 to 120 DEG C, will
The solvent contained in the paste of screen painting completely removes.
S9 is to be calcined.This step is can generate the condition of the burn-through of finger electrode 5 (fire-through) and carry out
Calcination.Specifically, S5 and S6 use the paste (silver-lead glass paste) being made of silver, lead glass in a manner of screen painting
Finger electrode 5 is printed off on nitride film 3, and in S7 and S8 equally in a manner of unduplicated, uses the paste containing vanadate glass
Both (vanadate glass paste) prints off fixed strip 6 in a manner of screen painting on nitride film 3, then carry out simultaneously in this case
Calcination (heating).About the condition of this calcination, it has been observed that comparing the forging of the former (burn-through caused by Yin Yin-lead glass paste)
The temperature (belonging to a kind of hard solder temperature) of temperature and the latter's (melting, fixation of vanadate glass paste) is burnt, it is higher than the latter with the former
Or both it is equal be its important document, be calcined herein using the former calcination temperature (calcination temperature of burn-through).Specifically, being
In the range of such as 750 DEG C to 850 DEG C, (heating utilizes far infrared lamp for the calcination of the time in the range of carrying out 1 to 60 second
It carries out, most preferred condition is determined with testing).
Will generate as a result, can reach (1) finger electrode 5 simultaneously can burn nitride film 3 and the meeting of (2) fixed strip 6 securely
Ground is bonded to nitride film 3 and surface is easy the significant effect welded.
The S10 of Fig. 7 is to carry out solder to adhere in advance.Shown in this step Fig. 3 as the aforementioned, the finger-like being calcined from S9 is electric
The preparatory attachment of solder is carried out on pole 5 and fixed strip 6 using ultrasonic wave soldering iron.
S11 is the welding for carrying out band.This step is that the welding of the progress band after the solder of S10 adheres in advance is (detailed
Explanation of the content referring to Fig. 3 above-mentioned).Furthermore, it is possible to use be attached with the band of solder in advance and directly carry out supersonic welding
It connects and is welded on finger electrode 5 and fixed strip 6.
S12 is the welding for carrying out back side.Band is welded in the shape in the S4 of Fig. 5 using ultrasonic bonding by this step
At in the aluminium film 4 of the back side in substrate 1.The welding of this back side can carry out the item that ultrasonic bonding will be attached with solder in advance
Band is directly welded in the aluminium film 4 of the S4 of figure, or in the same manner as fixed strip 6, prints off the back side with opening with screen painting
Fixed strip simultaneously carries out carrying out ultrasonic bonding for band and the fixed strip and the two of aluminium film 4 after calcination keeps it fixed securely
It welds, so that enhanced strength.
Fig. 8 shows concrete example of the invention and known example.
Fig. 8 (a) is the photograph for showing the example of fixed strip of disjunction of the invention (split) type.The display of this photograph is fixed
Item 6 is separated from finger electrode 5, and fixed strip 6 is divided into the example (referred to as disjunction type) of multistage in length direction.
Fig. 8 (b) is the photograph for showing the example of fixed strip of bow strip of the invention (touch bar) type.This photograph is aobvious
Show that fixed strip 6 is contacted with finger electrode 5, and fixed strip 6 is divided into the example (referred to as contact stripe shape) of multistage in length direction.
In both of the above, accuracy (contraposition etc.) and finger of the contact stripe shape of Fig. 8 (b) in the screen painting of fixed strip 6
It cannot be used when the not high situation of accuracy (contraposition etc.) when the screen painting of shape electrode 5, in order not to by the accuracy of the two
The influence of error is preferably selected the disjunction type of Fig. 8 (a).
Moreover, using Fig. 8 (a) disjunction type the case where when, as previously mentioned, making isolated width when carrying out ultrasonic bonding
Degree is more smaller than the size of soldering iron front end (length direction), can prevent soldering iron front end from contacting with the nitride film 3 of lower section and destroy nitridation
The situation of film 3 etc. occurs, so good welding can be carried out.
The known example under bus bar electrode with finger electrode of Fig. 8 (c) display.When herein the case where known example,
In a manner of screen painting band-like bus bar electrode is printed as orthogonal with finger electrode using the paste containing silver, lead glass and carried out
It is calcined and forms the bus bar electrode, so can have the disadvantage that: finger electrode can not protrude from bus bar electrode, and can not
It, as a result will via finger electrode-bus bar electrode-band path if band is directly welded on the finger electrode by the present invention
Electronics is fetched into outside, so can not reduce the resistance in path, the efficiency of solar battery can as a result reduced.
Detailed description of the invention
Fig. 1 is one embodiment of the invention composition figure (whole outside drawing).
Fig. 2 is one embodiment of the invention composition figure (part of the finger electrode 5 and fixed strip 6 watched above chip
Enlarged diagram example).
Fig. 3 is one embodiment of the invention composition figure (part of the finger electrode 5 and fixed strip 6 watched from wafer side
Amplify diagrammatic section legend).
Fig. 4 is process flow of the invention (one).
Fig. 5 be process flow of the invention (secondly).
Fig. 6 be process flow of the invention (thirdly).
Fig. 7 is process flow of the invention (its four).
Fig. 8 is concrete example of the invention and known example.
Description of symbols
1: substrate (silicon substrate)
3: nitride film (insulating film)
4: aluminium film
5: finger electrode
6: fixed strip
61: fixed strip area
7: band (is attached with solder) in advance.
Claims (15)
1. a kind of solar battery, formed on substrate when have the region that high electron concentration can be generated when the irradiation such as light and also
The insulating film that penetrates for light etc. is formed on the region, and is formed on the insulating film as taking out electronics from the region
The finger electrode of outlet, and the electronics is fetched into outside via the finger electrode, wherein
The finger electrode containing silver and lead is formed on the insulating film, and by the part of the finger electrode or possesses the portion of ampleness
It is divided into opening and is calcined after formation fixed strip on the insulating film,
The effect perforation of the silver and lead that contain in the finger electrode when using the calcination belongs to the institute of the film under the finger electrode
It states insulating film and forms conductive vias between the region and the finger electrode, and in the calcination simultaneously using described solid
The effect formation for determining the glass material contained in item is bonded to the insulating film and the good fixed strip of weldability securely.
2. solar battery according to claim 1, wherein the glass material, which uses, contains vanadium and barium, Yi Jixi, zinc
Or any above vanadate glass in its oxide.
3. solar battery according to claim 1 or 2, wherein burn the temperature of finger electrode and form the fixation
The former with the latter in the temperature of item is equal or the former is higher than the latter, and carries out the calcination with the former temperature.
4. solar battery according to any one of claim 1 to 3, wherein the calcination carry out 1 second or more 60 seconds with
Under.
5. solar battery according to any one of claim 1 to 4, wherein the part for possessing ampleness to be set as
Opening, the part for the given width that the influence caused by error when being by because of the finger electrode and fixed strip formation can become smaller
It is set as being open.
6. solar battery according to any one of claim 1 to 5, wherein the part for possessing ampleness to be set as
Opening is set to when being soldered to external terminal on the finger electrode and the fixed strip in a manner of ultrasonic bonding and is somebody's turn to do
The equal or slightly narrow opening of the contact portion of the front end of ultrasonic wave soldering iron, and directly contact the contact portion of the front end will not
The insulating film.
7. solar battery according to any one of claim 1 to 6, wherein external terminal is soldered to the finger-like
The solder of electrode and the fixed strip, containing tin, the oxide of tin, zinc, zinc oxide at least one more than.
8. solar battery according to claim 7, wherein the solder be optionally added with one of copper, silver with
It is upper to be used as additive.
9. solar battery according to any one of claim 1 to 8, wherein external terminal is soldered to the finger-like
The welding of electrode and the fixed strip is ultrasonic bonding.
10. solar battery according to claim 9, wherein the external terminal is band-like band.
11. solar battery according to any one of claim 1 to 10, wherein the substrate be equipped with it is described
Region, insulating film, finger electrode and fixed strip the whole face of the opposite back side of table side form aluminium film, and by the outside of back side
Terminal welding or ultrasonic bonding are on the aluminum film.
12. solar battery according to claim 11, wherein about the external terminal of the back side, with the table
Position or any position in the aluminium film of the back side corresponding to the roughly the same position of the fixed strip of side form described solid
Determine item and be calcined, then by the external terminal welding or ultrasonic bonding of the back side on the fixed strip.
13. a kind of manufacturing method of solar battery, the solar battery can be produced in formation on substrate when there is the irradiation such as light
It gives birth to the region of high electron concentration and forms the insulating film penetrated for light etc. on the area, and formed and made on the insulating film
For the outlet for taking out electronics from the region finger electrode and the electronics is fetched into outside via the finger electrode,
The manufacturing method includes
The finger electrode containing silver and lead is formed on the insulating film, and by the part of the finger electrode or possesses the portion of ampleness
The step of being divided into opening and being calcined after forming fixed strip on the insulating film；And
The effect perforation of the silver and lead that contain in the finger electrode when using the calcination belongs to the institute of the film under the finger electrode
It states insulating film and forms conductive vias between the region and the finger electrode, and in the calcination simultaneously using described solid
The effect formation for determining the glass material contained in item is bonded to the insulating film and the good fixed strip of weldability securely
The step of.
14. the manufacturing method of solar battery according to claim 13, wherein the substrate be equipped with the area
Domain, insulating film, finger electrode and fixed strip the whole face of the opposite back side of table side form aluminium film, then external terminal is welded
Or ultrasonic bonding is on the aluminum film.
15. the manufacturing method of solar battery according to claim 14, wherein about the external terminal of the back side,
Position or arbitrary position in the aluminium film of the back side corresponding to the position roughly the same with the fixed strip of the table side
It sets to form the fixed strip and be calcined, then by the external terminal welding or ultrasonic bonding of the back side in the fixed strip
On.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-257471 | 2016-12-30 | ||
| JP2016257471A JP2018110178A (en) | 2016-12-30 | 2016-12-30 | Solar cell and manufacturing method for the same |
| PCT/JP2017/045304 WO2018123687A1 (en) | 2016-12-30 | 2017-12-18 | Solar battery and solar battery manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110268531A true CN110268531A (en) | 2019-09-20 |
Family
ID=62707340
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780081471.1A Pending CN110268531A (en) | 2016-12-30 | 2017-12-18 | The manufacturing method of solar battery and solar battery |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2018110178A (en) |
| KR (1) | KR102227075B1 (en) |
| CN (1) | CN110268531A (en) |
| TW (1) | TWI663742B (en) |
| WO (1) | WO2018123687A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPWO2020090612A1 (en) * | 2018-10-29 | 2021-09-09 | アートビーム有限会社 | Solar cells and solar cell manufacturing methods |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014045909A1 (en) * | 2012-09-22 | 2014-03-27 | 株式会社ノリタケカンパニーリミテド | Solar cell module, and method for producing same |
| CN204914964U (en) * | 2015-07-14 | 2015-12-30 | 正中科技股份有限公司 | Positive silver electrode of solar cell can design type printing steel version structure |
| KR20160029501A (en) * | 2014-09-05 | 2016-03-15 | 엘지전자 주식회사 | Solar cell |
| WO2016117180A1 (en) * | 2015-01-21 | 2016-07-28 | 三菱電機株式会社 | Solar battery cell, solar battery module, method for manufacturing solar battery cell, and method for manufacturing solar battery module |
| JP2016192539A (en) * | 2015-03-30 | 2016-11-10 | 農工大ティー・エル・オー株式会社 | Solar battery and manufacturing method for solar battery |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5025135B2 (en) * | 2006-01-24 | 2012-09-12 | 三洋電機株式会社 | Photovoltaic module |
| JP2015050412A (en) * | 2013-09-04 | 2015-03-16 | 三洋電機株式会社 | Solar cell module, solar cell, and method of manufacturing the same |
| JP5944081B1 (en) * | 2015-01-21 | 2016-07-05 | 三菱電機株式会社 | Solar cell, solar cell module, method for manufacturing solar cell, method for manufacturing solar cell module |
| DE202015101360U1 (en) * | 2015-03-17 | 2015-03-26 | Solarworld Innovations Gmbh | solar cell |
| WO2016152481A1 (en) * | 2015-03-20 | 2016-09-29 | 株式会社マテリアル・コンセプト | Solar cell device and method for manufacturing same |
| WO2016171810A1 (en) * | 2015-04-20 | 2016-10-27 | Exxonmobil Chemical Patents Inc. | Supported catalyst systems and processes for use thereof |
| JP6659074B2 (en) * | 2015-10-13 | 2020-03-04 | 農工大ティー・エル・オー株式会社 | NTA paste |
-
2016
- 2016-12-30 JP JP2016257471A patent/JP2018110178A/en active Pending
-
2017
- 2017-12-15 TW TW106144182A patent/TWI663742B/en not_active IP Right Cessation
- 2017-12-18 KR KR1020197019096A patent/KR102227075B1/en active IP Right Grant
- 2017-12-18 CN CN201780081471.1A patent/CN110268531A/en active Pending
- 2017-12-18 WO PCT/JP2017/045304 patent/WO2018123687A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014045909A1 (en) * | 2012-09-22 | 2014-03-27 | 株式会社ノリタケカンパニーリミテド | Solar cell module, and method for producing same |
| KR20160029501A (en) * | 2014-09-05 | 2016-03-15 | 엘지전자 주식회사 | Solar cell |
| WO2016117180A1 (en) * | 2015-01-21 | 2016-07-28 | 三菱電機株式会社 | Solar battery cell, solar battery module, method for manufacturing solar battery cell, and method for manufacturing solar battery module |
| JP2016192539A (en) * | 2015-03-30 | 2016-11-10 | 農工大ティー・エル・オー株式会社 | Solar battery and manufacturing method for solar battery |
| CN204914964U (en) * | 2015-07-14 | 2015-12-30 | 正中科技股份有限公司 | Positive silver electrode of solar cell can design type printing steel version structure |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20190082991A (en) | 2019-07-10 |
| JP2018110178A (en) | 2018-07-12 |
| TW201830717A (en) | 2018-08-16 |
| KR102227075B1 (en) | 2021-03-11 |
| TWI663742B (en) | 2019-06-21 |
| WO2018123687A1 (en) | 2018-07-05 |
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Application publication date: 20190920 |