TW201830717A - Solar cell and method for manufacturing solar cell - Google Patents
Solar cell and method for manufacturing solar cell Download PDFInfo
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- TW201830717A TW201830717A TW106144182A TW106144182A TW201830717A TW 201830717 A TW201830717 A TW 201830717A TW 106144182 A TW106144182 A TW 106144182A TW 106144182 A TW106144182 A TW 106144182A TW 201830717 A TW201830717 A TW 201830717A
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- finger electrode
- solar cell
- insulating film
- fixing bar
- cell according
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- 238000000034 method Methods 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000011521 glass Substances 0.000 claims abstract description 25
- 229910052709 silver Inorganic materials 0.000 claims abstract description 19
- 239000004332 silver Substances 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 18
- 238000005476 soldering Methods 0.000 claims abstract description 16
- 238000003466 welding Methods 0.000 claims description 29
- 239000000758 substrate Substances 0.000 claims description 27
- 229910000679 solder Inorganic materials 0.000 claims description 21
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 18
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 16
- 238000001354 calcination Methods 0.000 claims description 16
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 claims description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 10
- 229910052742 iron Inorganic materials 0.000 claims description 9
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 8
- 229910052725 zinc Inorganic materials 0.000 claims description 8
- 239000011701 zinc Substances 0.000 claims description 8
- 238000010304 firing Methods 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000654 additive Substances 0.000 claims description 3
- 229910052788 barium Inorganic materials 0.000 claims description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 230000000996 additive effect Effects 0.000 claims description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 2
- 229910001887 tin oxide Inorganic materials 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 2
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 description 19
- 238000007650 screen-printing Methods 0.000 description 16
- 239000005355 lead glass Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910001128 Sn alloy Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000008034 disappearance Effects 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- LWUVWAREOOAHDW-UHFFFAOYSA-N lead silver Chemical compound [Ag].[Pb] LWUVWAREOOAHDW-UHFFFAOYSA-N 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000000935 solvent evaporation Methods 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
- H01L23/4924—Bases or plates or solder therefor characterised by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
Description
本發明係關於在基板上製作出照射光等時會產生高電子濃度之區域，並且在區域之上形成可供光等穿透之絕緣膜，然後在絕緣膜之上形成指狀電極，以形成用來從該區域取出電子之取出口，並且具有將複數個指狀電極電性連接以將電子取出到外部之固定條來取代以往的匯流條(bus bar)電極之太陽能電池及太陽能電池的製造方法。 The present invention relates to fabricating a region on a substrate that generates a high electron concentration when irradiated with light, etc., and an insulating film is formed on the region that can be penetrated by light and the like, and then finger electrodes are formed on the insulating film to form Manufacture of solar cells and solar cells for taking out electrons from this area, and having a fixed strip for electrically connecting a plurality of finger electrodes to take out electrons to the outside to replace conventional bus bar electrodes method.
就太陽能電池單元(cell)的設計而言，如何使太陽能電池單元內產生的電子有效率地流到所連接之外部電路是非常重要者。為了達成此目的而使從單元連到外部之部分的電阻成分減小、以及使所產生的電子不會消失尤為重要。 As far as the design of the solar cell is concerned, how to make the electrons generated in the solar cell efficiently flow to the connected external circuit is very important. In order to achieve this, it is particularly important to reduce the resistance component of the part connected from the cell to the outside, and to prevent the generated electrons from disappearing.
因此，有一種本發明之發明人曾提出過申請之技術，其係將屬於導電性玻璃之釩酸鹽玻璃用於匯流條電極而使指狀電極與外部取出用的條帶(ribbon)(引線)之間的連接的電阻值減小，且使匯集至匯流條電極之電子 的消失減少之技術(日本特願2016-015873、日本特願2015-180720)。 Therefore, there is a technology that the inventor of the present invention has applied for. The vanadium glass, which is a conductive glass, is used as a bus bar electrode, and a finger electrode and a ribbon (lead wire) for external extraction are used. The technology of reducing the resistance value of the connection between) and reducing the disappearance of electrons collected to the bus bar electrodes (Japanese Patent Application No. 2016-015873, Japanese Patent Application No. 2015-180720).
然而，將上述之習知之導電性玻璃使用於匯流條電極而使指狀電極與外部取出用的條帶(引線)之間的連接的電阻值減小，且使匯集至匯流條電極之電子的消失減少之方案並不充分，還有必須減少對於導電性玻璃的鍛燒工序的良否之依賴性，以及必須能夠活用一般的材料來進一步改善而達成高效率之課題。 However, by using the conventional conductive glass for a bus bar electrode, the resistance value of the connection between the finger electrode and a strip (lead) for external extraction is reduced, and the electrons collected to the bus bar electrode are reduced. The solution for reducing the disappearance is not sufficient, and it is necessary to reduce the dependence on the good or bad of the conductive glass firing process, and it is necessary to be able to use general materials to further improve and achieve high efficiency.
此外，也有必須要有低成本且高效率的太陽能電池單元的構造及其製造方法之課題。 In addition, there is a problem that it is necessary to have a structure and a manufacturing method of a solar cell with low cost and high efficiency.
另外，還有消除或減低習知之高價的銀的使用量，以及消除或減低鉛(鉛玻璃)的使用量，且使太陽能電池的製造成本更加降低且無公害之課題。 In addition, there is a problem of eliminating or reducing a conventionally used high-priced amount of silver, and eliminating or reducing a lead (lead glass), and further reducing the manufacturing cost of solar cells without pollution.
另外，也有無法充分地進行簡單且確實且低成本且穩固地焊接太陽能電池的基板的背側的端子之課題。 In addition, there is also a problem that it is not possible to adequately perform simple, reliable, low-cost, and stable soldering of the terminals on the back side of the substrate of the solar cell.
本發明之發明人係注意到指狀電極的上部露出在絕緣膜之上的情形，而發現若直接將作為外部端子之帶狀的條帶連接到該露出的指狀電極的上部的話就會成為不僅電阻成分減小而且電子的洩漏減少之構成等。 The inventor of the present invention noticed that the upper part of the finger electrode was exposed on the insulating film, and found that if a strip-like strip as an external terminal is directly connected to the upper part of the exposed finger electrode, it will become A configuration that reduces not only the resistance component but also the leakage of electrons.
因此，採用以下述之構造：使指狀電極與 外部端子之間的電阻成分減小，而且使用便宜的材料來替代以往之作為匯流條電極的材料之銀、導電性玻璃等之高價材料來形成固定條而牢固地固定外部端子，而設為低電阻且電子之洩漏少之構造，而可製造高效率且低成本之太陽能電池。 Therefore, a structure is adopted in which the resistance component between the finger electrode and the external terminal is reduced, and inexpensive materials are used in place of expensive materials such as silver and conductive glass, which have been conventionally used as bus bar electrodes. The fixing bar securely fixes the external terminal, and has a structure with low resistance and low leakage of electrons, so that a solar cell with high efficiency and low cost can be manufactured.
而且，可牢固地且以便宜的材料確實地將連接端子焊接到太陽能電池的基板背側。 Furthermore, the connection terminal can be firmly and reliably welded to the substrate back side of the solar cell with an inexpensive material.
因此，本發明之發明人係針對在基板上形成當有光等照射時會產生高電子濃度之區域而且在區域之上形成可供光等穿透之絕緣膜，並在絕緣膜之上形成作為將電子從區域取出的取出口之指狀電極，而經由該指狀電極將電子取出到外部之太陽能電池，在該太陽能電池中，在絕緣膜之上形成含有銀及鉛之指狀電極，並將指狀電極的部分或保有餘裕的部分設為開口而在絕緣膜之上形成固定條之後進行鍛燒，利用鍛燒時之前述指狀電極中含有的銀及鉛的作用貫通屬於指狀電極之下膜的絕緣膜而在區域與該指狀電極之間形成導電性通路，且在鍛燒時同時利用固定條中含有的玻璃材料的作用形成牢固地固著於絕緣膜且焊接性良好之固定條。 Therefore, the inventor of the present invention is directed to forming a region on the substrate that generates a high electron concentration when irradiated with light or the like, and an insulating film that can be penetrated by light or the like is formed on the substrate, and the insulating film is A finger electrode for taking out an electron from an area, and taking the electron to an external solar cell through the finger electrode. In the solar cell, a finger electrode containing silver and lead is formed on an insulating film, and The finger electrode part or the part with a margin is set as an opening, and a fixed bar is formed on the insulating film, and then calcined. The use of silver and lead contained in the aforementioned finger electrode at the time of calcination belongs to the finger electrode. The insulating film under the film forms a conductive path between the region and the finger electrode, and at the same time, the role of the glass material contained in the fixing bar is used to form a firmly fixed to the insulating film with good solderability during firing. Fixed strip.
其中，玻璃材料係採用含有釩及鋇、以及錫、鋅或其氧化物之中任一者以上之釩酸鹽玻璃。 The glass material is a vanadate glass containing vanadium and barium, and any one or more of tin, zinc, or an oxide thereof.
另外，燒穿(fire-through)指狀電極之溫度及形成固定條之溫度中的前者與後者相等或前者比後者高，且以前者之溫度進行鍛燒。 In addition, the former of the temperature of a fire-through finger electrode and the temperature of forming a fixed bar is equal to or higher than the latter, and the former is subjected to calcination.
又，鍛燒係進行1秒以上60秒以下。 The calcination is performed for 1 second to 60 seconds.
又，將保有餘裕的部分設為開口者，係將因指狀電極及固定條的形成時之誤差所造成的影響會變小之預定寬度的部分設為開口。 In addition, a portion having a margin is an opening, and a portion having a predetermined width, which has a small influence due to an error in the formation of the finger electrode and the fixing bar, is used as the opening.
又，將保有餘裕的部分設為開口者，係設為在以超音波焊接方式將外部端子焊接至指狀電極及固定條之上時與超音波烙鐵的前端的接觸部分相等或略窄之開口，而使前端的接觸部分不會直接接觸到絕緣膜。 In addition, the part with a margin is an opening, which is an opening that is equal to or slightly narrower than the contact portion of the tip of the ultrasonic soldering iron when the external terminal is welded to the finger electrode and the fixing bar by ultrasonic welding. So that the contact portion of the front end does not directly contact the insulating film.
又，將外部端子焊接至指狀電極及固定條之焊料，係含有錫、錫的氧化物、鋅、鋅的氧化物之至少一者以上。 The solder for soldering the external terminal to the finger electrode and the fixing bar is at least one of tin, tin oxide, zinc, and zinc oxide.
又，焊料係視需要添加有銅、銀之中的一者以上作為添加物。 In addition, solder is added with one or more of copper and silver as an additive as needed.
又，將外部端子焊接至指狀電極及固定條之焊接，係為超音波焊接。 In addition, the welding of the external terminals to the finger electrodes and the fixing bar is ultrasonic welding.
又，外部端子係為帶狀的條帶(ribbon)。 In addition, the external terminal is a ribbon-shaped ribbon.
又，在基板之與設有區域、絕緣膜、指狀電極、及固定條之表側相反之背側的整面形成鋁膜，並且將背側的外部端子焊接或超音波焊接在鋁膜上。 Further, an aluminum film is formed on the entire surface of the substrate on the back side opposite to the surface on which the region, the insulating film, the finger electrode, and the fixing bar are provided, and external terminals on the back side are welded or ultrasonically welded to the aluminum film.
又，關於背側之外部端子，係在與表側的固定條大致相同的位置所對應之背側的鋁膜之上的位置或任意的位置形成固定條並進行鍛燒，然後將背側的外部端子焊接或超音波焊接在該固定條上。 The external terminal on the back side is formed on the aluminum film on the back side or at an arbitrary position corresponding to the position on the front side of the fixing bar. The fixing bar is formed and fired. Terminal welding or ultrasonic welding is performed on the fixing bar.
本發明係如上所述，在指狀電極的上部露出在氧化膜之上之構成中使指狀電極的上部與作為外部端子之帶狀的條帶直接電性連接，因此成為電阻成分少之構成，且成為高效率之太陽能電池。 As described above, in the configuration in which the upper portion of the finger electrode is exposed on the oxide film, as described above, the upper portion of the finger electrode is directly electrically connected to the strip-shaped strip as an external terminal, so that it has a structure with less resistance components And become a highly efficient solar cell.
另外，以錫(或其氧化物)及鋅(或其氧化物)等作為焊料而焊接(或超音波焊接等)氧化膜、固定條、條帶這三者之情況時，該固定條的焊接密著性良好，所以會產生使指狀電極與條帶的接合性穩定地長壽命化之效果。 In addition, when tin (or its oxide), zinc (or its oxide), or the like is used as solder to weld (or ultrasonic welding, etc.) an oxide film, a fixing bar, or a strip, the welding of the fixing bar is performed. Since the adhesiveness is good, the effect of stably increasing the bonding between the finger electrode and the tape is obtained.
又，相對於以往之由銀材料及導電性玻璃等所構成之匯流條電極的構成(相當於本發明之固定條)，採用便宜的材料即可大幅地削減成本。 Moreover, compared with the structure of the conventional bus bar electrode (equivalent to the fixed bar of this invention) which consists of a silver material, conductive glass, etc., it can reduce a cost significantly by using an inexpensive material.
又，可減少以往之以鉛焊料為主流之太陽能電池中的鉛使用量，而可規劃設計對於環境友善之製程(process)。 In addition, the amount of lead used in the conventional lead-soldering solar cells can be reduced, and an environmentally friendly process can be planned and designed.
又，可用便宜的材料確實地將連接端子牢固地焊接於太陽能電池的基板的背側。 In addition, the connection terminal can be firmly soldered to the back side of the substrate of the solar cell with an inexpensive material.
1‧‧‧基板(矽基板) 1‧‧‧ substrate (silicon substrate)
3‧‧‧氮化膜(絕緣膜) 3‧‧‧nitride film (insulating film)
4‧‧‧鋁膜 4‧‧‧ aluminum film
5‧‧‧指狀電極 5‧‧‧ finger electrode
6‧‧‧固定條 6‧‧‧ fixed strip
7‧‧‧條帶(預先附著有焊料) 7‧‧‧ strip (pre-attached with solder)
61‧‧‧固定條區域 61‧‧‧Fixed area
第1圖係本發明的一實施例構成圖(整體的外觀圖)。 FIG. 1 is a structural diagram (an overall external view) of an embodiment of the present invention.
第2圖係本發明的一實施例構成圖(從晶圓的上側觀看之指狀電極5及固定條6的局部放大示意圖例)。 FIG. 2 is a structural diagram of an embodiment of the present invention (an example of a partially enlarged schematic diagram of the finger electrode 5 and the fixing bar 6 viewed from the upper side of the wafer).
第3圖係本發明的一實施例構成圖(從晶圓的側面觀看之指狀電極5及固定條6的局部放大示意斷面圖例)。 Fig. 3 is a structural diagram of an embodiment of the present invention (a partial enlarged schematic sectional view example of the finger electrode 5 and the fixing bar 6 viewed from the side of the wafer).
第4圖係本發明的工序流程(其一)。 FIG. 4 is a process flow (part 1) of the present invention.
第5圖係本發明的工序流程(其二)。 Fig. 5 is a process flow (second) of the present invention.
第6圖係本發明的工序流程(其三)。 FIG. 6 is the process flow (3) of the present invention.
第7圖係本發明的工序流程(其四)。 FIG. 7 is a process flow (4) of the present invention.
第8圖係本發明的具體例及習知例。 Fig. 8 is a specific example and a conventional example of the present invention.
第1至3圖顯示本發明的一實施例構成圖。 Figures 1 to 3 show the structure of an embodiment of the present invention.
在第1至3圖中，氮化膜3係形成在基板(晶圓)1上之絕緣膜。 In FIGS. 1 to 3, the nitride film 3 is an insulating film formed on a substrate (wafer) 1.
指狀電極5係藉由在氮化膜3之上印刷銀、鉛(鉛玻璃)的糊(paste)然後加以燒結，而利用公知的燒穿來突破該氮化膜3而在其與高濃度電子區域之間形成導電性路徑，以將電子取出到外部者(詳後述)。 The finger electrodes 5 are printed with a paste of silver and lead (lead glass) on the nitride film 3 and then sintered, and the well-known firing through is used to break through the nitride film 3 and achieve a high concentration between them. A conductive path is formed between the electron regions to take out electrons to an outsider (to be described later in detail).
固定條6係本發明中設置者，將指狀電極5的部分設為開口，且牢固地固定於氮化膜3，並且用來使外部端子(帶狀的條帶)之焊接良好地進行，以及使從指狀電極5取出的電子的洩漏減低等者(詳後述)。 The fixing bar 6 is provided by the present invention. The finger electrode 5 has an opening and is firmly fixed to the nitride film 3, and is used for welding the external terminal (belt-shaped strip) well. And to reduce leakage of electrons taken out from the finger electrode 5 (described later).
固定條區域61係形成固定條6之區域(詳後述)。 The fixed strip area 61 is an area forming the fixed strip 6 (to be described in detail later).
第1圖顯示本發明的一實施例構成圖(整體的外觀圖)。 FIG. 1 shows a configuration diagram (an overall external view) of an embodiment of the present invention.
在第1圖中，圖示的矩形的基板(矽基板、晶圓)係實驗中使用者。此處使用的基板係矩形的尺寸為48mm者(數值只是一個例子)。 In the first figure, the rectangular substrate (silicon substrate, wafer) shown in the figure is a user in the experiment. The substrate used here has a rectangular size of 48 mm (the values are only examples).
指狀電極5係如圖示，在此例中係於橫方向相隔著預定間隔而設有多數個，且進行燒結並利用燒穿而在其與高濃度電子區域之間形成導電性路徑者。 The finger electrodes 5 are as shown in the figure. In this example, a plurality of finger electrodes 5 are provided at predetermined intervals in the lateral direction, and a conductive path is formed between the finger electrodes 5 and the high-concentration electron region by sintering and firing.
固定條區域61係如圖示之虛線所示，朝垂直方向以預定的寬度在指狀電極5形成後述的固定條6之區域。 The fixed strip region 61 is a region in which a fixed strip 6 to be described later is formed on the finger electrode 5 with a predetermined width in a vertical direction, as shown by a dotted line in the figure.
第2圖顯示從晶圓的上側觀看之指狀電極5及固定條6的局部放大示意圖例。 FIG. 2 shows an example of a partially enlarged schematic view of the finger electrode 5 and the fixing bar 6 viewed from the upper side of the wafer.
在第2圖中，固定條6係形成於第1圖之固定條區域61者，此處係如圖示，將指狀電極5的部分設為開口而設有複數個帶狀部分者。此處，係如例如圖示，設有複數個寬度為2.0mm、長度為1.2mm且與指狀電極5之間的開口為0.5mm左右之帶狀部分者。此固定條6之形成，係以網版印刷進行，然後進行燒結使之牢固地固著於氮化膜3而且使之焊接性良好(詳後述)。 In FIG. 2, the fixing strip 6 is formed in the fixing strip region 61 in FIG. 1. Here, as shown in the figure, a portion of the finger electrode 5 is an opening and a plurality of strip-shaped portions are provided. Here, as shown in the figure, for example, a plurality of strip-shaped portions having a width of 2.0 mm, a length of 1.2 mm, and an opening between the finger electrode 5 and about 0.5 mm are provided. The formation of the fixing strip 6 is performed by screen printing, and then sintering is performed to firmly fix the nitride film 3 and to improve the weldability (described in detail later).
第3圖顯示從晶圓的側面觀看之指狀電極5及固定條6的局部放大示意剖面圖例。 FIG. 3 shows a partially enlarged schematic cross-sectional example of the finger electrode 5 and the fixing bar 6 viewed from the side of the wafer.
在第3圖中，指狀電極5係以網版印刷印出然後進行燒結，利用燒穿而如圖示突破下層的氮化膜3而在其與下面的高濃度電子區域之間形成導電性路徑，並且如圖示朝上方形成通常約40nm之突出部以作為上部(頭部)(詳後述)。 In Fig. 3, the finger electrode 5 is printed by screen printing and then sintered. The lower electrode nitride film 3 is penetrated by firing through as shown in the figure to form electrical conductivity between the finger electrode 5 and the high-concentration electron region below. As shown in the figure, a protruding portion, usually about 40 nm, is formed as an upper portion (head) as shown in the figure (described later).
固定條6係本發明中採用者，係以網版印刷方式印刷含有釩酸鹽玻璃之糊，且與指狀電極5之燒結 時同時進行加熱使之熔融而使之牢固地固著於氮化膜3，並且使其表面形成為容易進行焊接的狀態者(詳後述)。此固定條6最好具有高電氣絕緣性，這是為了使在條帶流動之電子不會洩漏到基板等之故。最好調整成(調整網版印刷時之含有釩酸鹽玻璃之糊的濃度等)使固定條6如圖示形成為比指狀電極5的上部(頭部)的高度(此處為約40nm)更低之高度(此處為約20nm)。藉此可在焊接(最好為超音波焊接)圖示的條帶7之際將之完全地焊接成覆蓋指狀電極5的上部(頭部)之部分而減小接觸電阻且增強機械性強度(即使條帶7受到拉扯也不會脫離)。 The fixing strip 6 is adopted by the present invention, and is used to print a paste containing vanadate glass by screen printing, and is heated and melted at the same time as the finger electrode 5 is sintered to fix it firmly to the nitride. The film 3 is formed so that its surface can be easily welded (described in detail later). The fixing strip 6 preferably has high electrical insulation, so that electrons flowing through the strip do not leak to the substrate or the like. It is best to adjust (adjust the concentration of the vanadate glass-containing paste during screen printing) so that the fixing strip 6 is formed higher than the upper part (head) of the finger electrode 5 as shown (here, about 40 nm) ) Lower height (here about 20nm). Thereby, the strip 7 shown in the figure (preferably ultrasonic welding) can be completely welded to cover the upper part (head) of the finger electrode 5 to reduce the contact resistance and increase the mechanical strength. (It will not come off even if the strip 7 is pulled).
實驗係在 Experiment
‧固定條6的寬度：2mm ‧Width of fixing bar 6: 2mm
‧超音波烙鐵的前端的長度：2mm ‧The length of the tip of the ultrasonic soldering iron: 2mm
‧超音波烙鐵的前端的寬度：2mm之情況時，將指狀電極5與固定條6之間隔(長度方向的間隔)設為： ‧上限係不會比烙鐵前端的動作方向的長度(上述的例子為2mm)長，使烙鐵前端不會接觸到下方的氮化膜3等而損傷(以實驗決定此上限)。 ‧ When the width of the tip of the ultrasonic soldering iron is 2mm, set the distance between the finger electrodes 5 and the fixing bar 6 (interval in the longitudinal direction) as: The example is 2mm) long, so that the tip of the soldering iron does not come into contact with the nitride film 3 and the like below to damage it (the upper limit is determined experimentally).
‧下限係不會使第3圖所示之焊料傾斜部分太陡，而且在網版印刷對合精度以內，使焊料不會斷掉(以實驗決定此下限)。 ‧The lower limit is not to make the inclined part of the solder shown in Figure 3 too steep, and it is within the precision of screen printing butt so that the solder will not be broken (the lower limit is determined experimentally).
另外，將指狀電極5與固定條6的寬度設為： ‧上限為條帶的寬度(固定條6的寬度)。 In addition, the widths of the finger electrodes 5 and the fixing bars 6 are set as follows: The upper limit is the width of the strips (the width of the fixing bars 6).
‧下限為上限的0.8倍左右。 ‧The lower limit is about 0.8 times the upper limit.
另外，超音波焊接的功率係設為2W之程度。功率太大會損傷N+射極(emitter)(高濃度電子區域)，太小則無法得到焊接密著性(焊接密著性的規定為0.2N以上，在本發明中係設為0.5N以上)，所以要以實驗來決定最合適的W值(由於因超音波烙鐵(前端的長度、寬度等)而不同，因此以實驗來決定)。 In addition, the power of the ultrasonic welding is set to about 2W. Too much power will damage the N + emitter (high-concentration electron region), and too small to obtain welding adhesion (the welding adhesion is specified to be 0.2N or more, which is set to 0.5N or more in the present invention), Therefore, the most appropriate W value should be determined experimentally (because it varies with the ultrasonic soldering iron (the length and width of the front end), so it is determined experimentally).
此處，將條帶(外部端子)與固定條6及指狀電極5予以焊接之要件，是必須使其與指狀電極5(銀)、固定條6(釩酸鹽玻璃)的密著性良好。 Here, in order to weld the strip (external terminal) to the fixing strip 6 and the finger electrode 5, it is necessary to make the adhesiveness with the finger electrode 5 (silver) and the fixing strip 6 (vanadate glass). good.
‧就符合上述要件之焊料而言，係採用錫與鋅的合金、錫與銅的合金、錫與銀的合金等。 ‧As for the solders meeting the above requirements, the alloys are tin and zinc alloys, tin and copper alloys, and tin and silver alloys.
‧將條帶(已附著有焊料)以超音波焊接方式焊接至固定條6及指狀電極5時之超音波輸出係如上述可為2W之程度。以超音波焊接無需使溫度高到必要以上的溫度。而且，可不用使焊接區域以外的無用部分的溫度升高，可防止因周圍的無用的溫度上升所造成之性能劣化。 ‧The ultrasonic output when the strip (with solder attached) is welded to the fixed strip 6 and the finger electrode 5 by ultrasonic welding can be 2W as described above. Ultrasonic welding does not require the temperature to be higher than necessary. In addition, it is not necessary to raise the temperature of useless parts other than the welding area, and it is possible to prevent performance deterioration caused by surrounding useless temperature rise.
條帶(外部端子)係為以銅作為中心的材料之線材，並以焊料覆蓋其外側(已附著有焊料)。 The strip (external terminal) is a wire material with copper as the center material, and the outside is covered with solder (the solder is already attached).
‧基板(晶圓)的背側之焊接，係在該基板的背側的整面鍍覆鋁膜，所以係直接將條帶焊接在其上、或與上述一樣形成固定條6之後才進行條帶之超音波焊接。 ‧The welding of the back side of the substrate (wafer) is coated with an aluminum film on the entire surface of the back side of the substrate, so the strip is directly welded to it or the fixing strip 6 is formed as above. Ultrasonic welding of the belt.
以錫、鋅等作為焊料的主體之情況時，若 預期會有低溫脆性，則為了避免此情形而視需要添加添加物(銅、銀等)(添加之後成為合金)。 In the case of tin, zinc, etc. as the main body of the solder, if low-temperature brittleness is expected, additives (copper, silver, etc.) are added as necessary to avoid this (alloys become alloys after addition).
又，固定條6之形成，在實驗中為：‧使用以釩酸鹽玻璃為主體之糊，進行網版印刷然後加以燒結而形成。 In addition, the formation of the fixing strip 6 was performed in the experiment as follows: ‧ A paste containing vanadate glass as a main body was screen-printed and then sintered.
‧材料例：釩、鋇、(錫或鋅或兩者(或該等的氧化物))之玻璃糊。 ‧Material examples: Vanadium, barium, (tin or zinc or both (or oxides of these)) glass paste.
‧概略說明：使全部材料熔融然後急速冷卻而產生釩酸鹽玻璃，再將之研磨成粉末然後作成釩酸鹽玻璃糊。利用此糊進行網版印刷而形成固定條6然後加以燒結，形成最後的固定條6。 ‧Outline: Vanadate glass is produced by melting all materials and then rapidly cooling, then grinding it into powder and making vanadate glass paste. This paste is used for screen printing to form the fixing strip 6 and then sintered to form the final fixing strip 6.
此固定條6的形成要件為：(1)與使用的焊料的密著性良好 The formation requirements of this fixing bar 6 are: (1) Good adhesion with the solder used
(2)電氣絕緣性良好 (2) Good electrical insulation
(3)與氮化膜3的密著性良好，以實驗來決定滿足以上要件之材料、網版印刷的厚度、及燒結溫度等。 (3) The adhesiveness with the nitride film 3 is good. The materials that satisfy the above requirements, the thickness of the screen printing, and the sintering temperature are determined experimentally.
接著，按照第4至7圖之工序流程來依序詳細說明第1至3圖之構成的工序。 Next, the steps of the structure of FIGS. 1 to 3 will be described in detail in order according to the process flow of FIGS. 4 to 7.
第4至7圖係顯示本發明的工序流程。 Figures 4 to 7 show the process flow of the present invention.
第4圖中，S1係準備矽基板(四價)。此步驟係準備要作為太陽能電池的基板(四價)之晶圓。 In Figure 4, a silicon substrate (quatervalent) is prepared for the S1 series. This step is to prepare a wafer (quaternary) as a substrate for a solar cell.
S2係製作出P型(三價)的基板1。此步驟係使硼等擴散至S1之矽基板(四價)中而成為P型(三價)。 S2 is a P-type (trivalent) substrate 1. In this step, boron and the like are diffused into the silicon substrate (quaternary) of S1 to become P-type (trivalent).
S3係使磷(五價)擴散而在表面製作N+型。如此，可製作出高濃度電子區域(N+型)。 The S3 system diffuses phosphorus (pentavalent) to form an N + type on the surface. In this way, a high-concentration electron region (N + type) can be produced.
第5圖中，S4係在基板1的表側的N+區域(高電子濃度區域)之上形成氮化膜3。氮化膜3通常為60nm之程度的厚度。藉此，利用氮化膜3來保護N+區域(高電子濃度區域)。 In FIG. 5, S4 is a nitride film 3 formed on the N + region (high electron concentration region) on the front side of the substrate 1. The thickness of the nitride film 3 is generally about 60 nm. Thereby, the N + region (high electron concentration region) is protected by the nitride film 3.
另外，在S4中在基板1的背側以蒸鍍、濺鍍等方式形成鋁膜4。鋁膜4係為作為太陽能電池的背側的電極之部分。 In addition, in S4, an aluminum film 4 is formed on the back side of the substrate 1 by evaporation, sputtering, or the like. The aluminum film 4 is a part serving as an electrode on the back side of a solar cell.
S5係進行指狀電極之印刷。此步驟係使用由銀、鉛玻璃所構成之糊進行網版印刷，以印出前述的第1至3圖中的指狀電極5的形狀。 S5 is used to print finger electrodes. In this step, screen printing is performed using a paste composed of silver and lead glass to print out the shape of the finger electrode 5 in the aforementioned first to third figures.
S6係進行溶劑蒸散。此步驟係在100至120℃之下進行一小時左右的加熱，將網版印刷的糊中含有的溶劑完全去除掉。 The S6 system performs solvent evaporation. In this step, heating is performed at 100 to 120 ° C for about an hour, and the solvent contained in the screen printing paste is completely removed.
第6圖之S7係進行固定條6之印刷。此步驟係使用含有釩酸鹽玻璃之糊進行網版印刷，以印出前述的第1至3圖中的固定條6的形狀。 S7 in FIG. 6 is for printing the fixing strip 6. This step is screen printing using a paste containing vanadate glass to print out the shape of the fixing strip 6 in the aforementioned first to third figures.
S8係進行固定條的溶劑蒸散。此步驟係在100至120℃之下進行一小時左右的加熱，將網版印刷的糊中含有的溶劑完全去除掉。 The S8 system performs solvent evaporation of the fixed strip. In this step, heating is performed at 100 to 120 ° C for about an hour, and the solvent contained in the screen printing paste is completely removed.
S9係進行鍛燒。此步驟係以會產生指狀電極5的燒穿(fire-through)之條件進行鍛燒。詳言之，在S5及S6使用由銀、鉛玻璃所構成之糊(銀-鉛玻璃糊)以網版 印刷方式在氮化膜3之上印出指狀電極5，且在S7及S8中同樣以不重複的方式，使用含有釩酸鹽玻璃之糊(釩酸鹽玻璃糊)以網版印刷方式在氮化膜3之上印出固定條6，然後在此狀態下同時進行兩者之鍛燒(加熱)。關於此鍛燒之條件，如前述，比較前者(因銀-鉛玻璃糊所造成之燒穿)的鍛燒溫度與後者(釩酸鹽玻璃糊之熔解、固著)的溫度(屬於一種硬焊溫度)，以前者比後者高或兩者相等為其要件，此處係採用前者的鍛燒溫度(燒穿之鍛燒溫度)而進行鍛燒。具體而言，係在例如750℃至850℃的範圍內，進行1至60秒的範圍內的時間之鍛燒(加熱係利用遠紅外線燈進行，最佳的條件係以實驗來決定)。 S9 series is calcined. This step is performed under conditions that will cause fire-through of the finger electrodes 5. In detail, in S5 and S6, a finger electrode 5 is printed on the nitride film 3 by screen printing using a paste composed of silver and lead glass (silver-lead glass paste), and in S7 and S8 Similarly, in a non-repeating manner, using a paste containing vanadate glass (vanadate glass paste) to screen-print the fixing strip 6 on the nitride film 3, and then perform both of them simultaneously in this state. Calcination (heating). Regarding the conditions of this calcination, as mentioned above, compare the calcination temperature of the former (burn-through caused by silver-lead glass paste) with the temperature of the latter (melting and fixing of vanadate glass paste) (a kind of brazing) Temperature), the former is higher than the latter or both are equal. Here, the former is used for the calcination temperature (the calcination temperature of the burn-through). Specifically, for example, calcination is performed in a range of 750 ° C to 850 ° C for a time in a range of 1 to 60 seconds (heating is performed using a far-infrared lamp, and optimal conditions are determined experimentally).
藉此，就會產生可同時達成(1)指狀電極5會燒穿氮化膜3、以及(2)固定條6會牢固地固著於氮化膜3且表面容易進行焊接之顯著的效果。 Thereby, a significant effect can be achieved that (1) the finger electrodes 5 will burn through the nitride film 3 and (2) the fixing strip 6 will be firmly fixed to the nitride film 3 and the surface can be easily welded. .
第7圖之S10係進行焊料預先附著。此步驟係如前述的第3圖所示，從在S9中鍛燒的指狀電極5及固定條6之上利用超音波烙鐵進行焊料之預先附著。 S10 in FIG. 7 performs pre-soldering. In this step, as shown in FIG. 3 described above, the solder electrodes are pre-attached from the finger electrodes 5 and the fixing bars 6 which have been fired in S9 using an ultrasonic soldering iron.
S11係進行條帶的焊接。此步驟係在S10之焊料預先附著之後進行條帶的焊接(詳細內容參照前述的第3圖之說明)。此外，亦可使用預先附著有焊料之條帶而直接進行超音波焊接而焊接在指狀電極5及固定條6上。 The S11 series performs welding of strips. In this step, the strip is soldered after the solder of S10 is attached in advance (for details, refer to the description of the aforementioned FIG. 3). In addition, it is also possible to directly perform ultrasonic welding using a strip to which solder is affixed in advance, and to solder to the finger electrodes 5 and the fixing strip 6.
S12係進行背側之條帶焊接。此步驟係利用超音波焊接將條帶焊接於在第5圖之S4中形成在基板1的背側之鋁膜4上。此背側之條帶焊接係可進行超音波焊 接將預先附著有焊料之條帶直接焊接在第5圖之S4的鋁膜4上，或與固定條6同樣地，以網版印刷印出具有開口之背側的固定條並進行鍛燒使之牢固地固著之後，進行超音波焊接將條帶與該固定條及鋁膜4之兩者焊接起來，以使強度增強。 S12 is welded on the back side. This step uses ultrasonic welding to weld the strip to the aluminum film 4 formed on the back side of the substrate 1 in S4 of FIG. 5. The strip welding on the back side can be performed by ultrasonic welding. The strip pre-attached with the solder is directly welded to the aluminum film 4 of S4 in FIG. 5, or the same as the fixing strip 6, which is printed by screen printing. After the fixing strip on the back side of the opening is firmly fixed by calcination, ultrasonic welding is performed to weld the strip to both the fixing strip and the aluminum film 4 to increase the strength.
第8圖係顯示本發明的具體例及習知例。 Fig. 8 shows a specific example and a conventional example of the present invention.
第8圖(a)係顯示本發明的分斷(split)型的固定條之例的相片。此相片係顯示固定條6從指狀電極5分離，且固定條6在長度方向分割成多段之例(稱為分斷型)。 Fig. 8 (a) is a photograph showing an example of a split-type fixing bar according to the present invention. This photograph shows an example in which the fixing bar 6 is separated from the finger electrode 5 and the fixing bar 6 is divided into a plurality of sections in the length direction (referred to as a break type).
第8圖(b)係顯示本發明的接觸條(touch bar)型的固定條之例的相片。此相片係顯示固定條6與指狀電極5接觸，且固定條6在長度方向分割成多段之例(稱為接觸條型)。 Fig. 8 (b) is a photograph showing an example of a touch bar type fixing bar of the present invention. This photo shows an example in which the fixing bar 6 is in contact with the finger electrode 5 and the fixing bar 6 is divided into multiple sections in the length direction (referred to as a contact bar type).
以上兩者之中，第8圖(b)之接觸條型係在固定條6的網版印刷時的精確度(對位等)、與指狀電極5的網版印刷時的精確度(對位等)不高之情況時不能採用，為了不受兩者的精確度誤差之影響，最好選擇第8圖(a)之分斷型。 Among the above two, the contact strip type in FIG. 8 (b) is the accuracy (alignment, etc.) during screen printing of the fixed strip 6 and the accuracy (alignment) during screen printing of the finger electrode 5. (Bit, etc.) can not be used when it is not high. In order not to be affected by the accuracy error of the two, it is best to choose the break type of Figure 8 (a).
而且，採用第8圖(a)之分斷型之情況時，如前所述，在進行超音波焊接之際使分離的寬度比烙鐵前端的尺寸(長度方向)略小，可防止烙鐵前端與下方的氮化膜3接觸而破壞氮化膜3等之情形發生，所以可進行良好的焊接。 In the case of the split type shown in Fig. 8 (a), as described above, when performing ultrasonic welding, the separation width is slightly smaller than the size (length direction) of the tip of the soldering iron, which can prevent the tip of the soldering iron and the Since the lower nitride film 3 is in contact with each other, the nitride film 3 or the like may be destroyed, so that good soldering can be performed.
第8圖(c)顯示習知之在匯流條電極之下具有指狀電極之例。在此習知例的情況時，係使用含有銀、鉛玻璃之糊以網版印刷方式將帶狀的匯流條電極印成與指狀電極正交並進行鍛燒而形成該匯流條電極，所以會有以下缺點：指狀電極無法突出於匯流條電極之上，而無法如本發明直接將條帶焊接在該指狀電極上，結果係經由指狀電極-匯流條電極-條帶之路徑將電子取出到外部，所以無法減小路徑的電阻，結果會使太陽能電池的效率降低。 Fig. 8 (c) shows a conventional example in which a finger electrode is provided below the bus bar electrode. In the case of this conventional example, the strip-shaped bus bar electrode was printed by screen printing using a paste containing silver and lead glass so as to be orthogonal to the finger electrode and then calcined to form the bus bar electrode. It has the following disadvantages: the finger electrode cannot protrude above the bus bar electrode, and the strip cannot be directly welded to the finger electrode as in the present invention. As a result, the path of the finger electrode-bus bar electrode-strip Since the electrons are taken out to the outside, the resistance of the path cannot be reduced, and as a result, the efficiency of the solar cell is reduced.
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| JP2015050412A (en) * | 2013-09-04 | 2015-03-16 | 三洋電機株式会社 | Solar cell module, solar cell, and method of manufacturing the same |
| KR101630526B1 (en) * | 2014-09-05 | 2016-06-14 | 엘지전자 주식회사 | Solar cell |
| JP5944081B1 (en) * | 2015-01-21 | 2016-07-05 | 三菱電機株式会社 | Solar cell, solar cell module, method for manufacturing solar cell, method for manufacturing solar cell module |
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| DE202015101360U1 (en) * | 2015-03-17 | 2015-03-26 | Solarworld Innovations Gmbh | solar cell |
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