CN110212079B - Transfer method of Micro-LED chip and Micro-LED display panel - Google Patents
Transfer method of Micro-LED chip and Micro-LED display panel Download PDFInfo
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- CN110212079B CN110212079B CN201910410441.1A CN201910410441A CN110212079B CN 110212079 B CN110212079 B CN 110212079B CN 201910410441 A CN201910410441 A CN 201910410441A CN 110212079 B CN110212079 B CN 110212079B
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- 238000000034 method Methods 0.000 title claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 229910052751 metal Inorganic materials 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 43
- 239000000084 colloidal system Substances 0.000 claims abstract description 29
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 239000010931 gold Substances 0.000 claims description 25
- 229910052737 gold Inorganic materials 0.000 claims description 18
- 239000004020 conductor Substances 0.000 claims description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 12
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 239000010944 silver (metal) Substances 0.000 claims description 7
- 239000000853 adhesive Substances 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910021389 graphene Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 description 11
- 229910000510 noble metal Inorganic materials 0.000 description 10
- 238000003466 welding Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 239000007769 metal material Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000004021 metal welding Methods 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68372—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support a device or wafer when forming electrical connections thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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Abstract
A transfer method of a Micro-LED chip and a Micro-LED display panel comprise the following steps: providing a target substrate, wherein the surface of the target substrate is provided with a plurality of groove structures, and a first metal electrode is formed in each groove structure; providing a transfer head, wherein a plurality of suction heads are arranged on the transfer head, the position of each suction head corresponds to the position of each groove structure, and the transfer head sucks the conductive colloid through the suction heads; aligning each suction head on the transfer head to the corresponding groove structure, and releasing the conductive colloid in the transfer head; transferring a plurality of MicroLED chips containing second metal electrodes onto the groove structures corresponding to the target substrate through a transfer substrate; and curing the conductive colloid in a heating mode.
Description
Technical Field
The invention relates to the technical field of display, in particular to a Micro-LED chip transfer method and a Micro-LED display panel.
Background
The Micro-LED chip is a display technology that the traditional LED structure is miniaturized and matrixed, and a CMOS (complementary metal oxide semiconductor) integrated circuit is adopted to make a driving circuit, so that the addressing control and the independent driving of each pixel point are realized. Micro-LED chips have the advantages of self-luminescence, simple structure, small volume and energy saving, and have been actively laid out by many manufacturers as next-generation display technology. The Micro-LED chips are typically thin sheets with a size of less than 50um and a thickness of less than 10um, and thus need to be transferred to a target substrate. At present, in order to realize the electrical connection between the Micro-LED chip and the target substrate, a noble metal electrode layer is usually formed on the Micro-LED chip and the target substrate, and then a solder layer material is formed on the Micro-LED chip. However, since the process requires a noble metal layer on the target substrate and a solder layer on the Micro-LED chip, the process is complicated, and a large amount of noble metal materials and solder materials are wasted due to the etching process, which results in high cost.
In summary, in the conventional transfer method for the Micro-LED chip and the Micro-LED display panel, the noble metal layer needs to be fabricated on the target substrate, and the soldering layer needs to be fabricated on the Micro-LED chip separately, so that a large amount of noble metal materials and soldering materials are wasted due to the etching process, and further the cost is high.
Disclosure of Invention
The invention provides a Micro-LED chip transfer method and a Micro-LED display panel, which can achieve the purposes of omitting a metal welding layer process on a Micro-LED chip and a noble metal electrode process on a target substrate, and solve the technical problems that the existing Micro-LED chip transfer method and the existing Micro-LED display panel need to manufacture a noble metal layer on the target substrate and a welding layer on the Micro-LED chip separately, and due to the adoption of an etching process, a large amount of noble metal materials and welding materials are wasted, and the cost is high.
In order to solve the above problems, the technical scheme provided by the invention is as follows:
the invention provides a transfer method of a Micro-LED chip, which comprises the following steps:
s10, providing a target substrate, wherein the surface of the target substrate is provided with a plurality of groove structures, and a metal film layer is deposited in each groove structure to form a first metal electrode;
s20, providing a transfer head, wherein a plurality of suction heads are arranged on the transfer head, the position of each suction head corresponds to the position of each groove structure, and the transfer head sucks the conductive colloid through the suction heads;
s30, aligning each suction head on the transfer head to the corresponding groove structure, releasing the conductive colloid in the transfer head, and placing the conductive colloid in the groove structure;
s40, transferring a plurality of MicroLED chips containing second metal electrodes onto the groove structures corresponding to the target substrate through a transfer substrate, and enabling the second metal electrodes to be in contact with the conductive colloid;
s50, curing the conductive colloid in a heating mode to realize reliable electrical connection between the Micro-LED chip and the target substrate.
According to a preferred embodiment of the present invention, in the step S10, the plurality of groove structures are distributed in an array, and a bottom surface of each groove structure is square.
According to a preferred embodiment of the present invention, in the step S10, the target substrate is any one of a printed circuit board, a TFT substrate and a CMOS substrate.
According to a preferred embodiment of the present invention, in the steps S10 and S40, the first metal electrode and the second metal electrode are any one of Au, Ag, Au/AuSn, and Au/AuTi.
According to a preferred embodiment of the present invention, in the step S20, the plurality of suction heads are hollow, and the bottom surfaces of the plurality of suction heads are circular.
According to a preferred embodiment of the present invention, in step S20, the conductive colloid is any one of a silver sol, a gold sol, a nano silver solution/sol, a nano silver wire solution/sol, a graphene solution/sol, and an anisotropic conductive adhesive.
According to a preferred embodiment of the present invention, in the step S50, the heating manner includes heating the target substrate directly or by infrared rays.
The invention also provides a Micro-LED display panel, which comprises a target substrate, a first metal electrode, a conductive material layer, a second metal electrode and a Micro-LED chip, wherein the surface of the target substrate is provided with a plurality of groove structures, the first metal electrode and the conductive material layer are arranged in the groove structures, and the second metal electrode is arranged on the Micro-LED chip and is in contact with the conductive material layer.
According to a preferred embodiment of the present invention, the plurality of groove structures are distributed in an array, and a bottom surface of each groove structure is square.
According to a preferred embodiment of the present invention, the first metal electrode and the second metal electrode are any one of Au, Ag, Au/AuSn, Au/AuTi.
The invention has the beneficial effects that: according to the Micro-LED chip transfer method and the Micro-LED display panel, the groove structure is arranged on the target substrate, and the conductive colloid welding material is released into the groove structure by the transfer head, so that the material cost and the process are saved, and the production rate is further improved.
Drawings
In order to illustrate the embodiments or the technical solutions in the prior art more clearly, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the invention, and it is obvious for a person skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a flow chart of a transferring method of Micro-LED chips according to the present invention.
FIGS. 2A-2E are schematic structural views illustrating a transferring method of the Micro-LED chip shown in FIG. 1.
FIG. 3 is a top view of a target substrate in the transfer method of Micro-LED chips according to the present invention.
FIG. 4 is a schematic cross-sectional view of a transfer head in the transfer method of the Micro-LED chip according to the present invention.
FIG. 5 is a schematic structural view of a Micro-LED display panel according to the present invention.
Detailed Description
The following description of the various embodiments refers to the accompanying drawings that illustrate specific embodiments in which the invention may be practiced. The directional terms mentioned in the present invention, such as [ upper ], [ lower ], [ front ], [ rear ], [ left ], [ right ], [ inner ], [ outer ], [ side ], are only referring to the directions of the attached drawings. Accordingly, the directional terms used are used for explanation and understanding of the present invention, and are not used for limiting the present invention. In the drawings, elements having similar structures are denoted by the same reference numerals.
The invention aims at the technical problems that in the existing transfer method of the Micro-LED chip and the Micro-LED display panel, a precious metal layer needs to be manufactured on a target substrate, and a welding layer needs to be manufactured on the Micro-LED chip independently, and due to the adoption of an etching process, a large amount of precious metal materials and welding materials are wasted, and the cost is high, and the defects can be solved by the embodiment.
FIG. 1 shows a flow chart of a transferring method of Micro-LED chips according to the present invention. Wherein the method comprises the following steps:
s10, providing a target substrate 11, wherein the surface of the target substrate 11 is provided with a plurality of groove structures 12, and a metal film is deposited in each groove structure 12 to form a first metal electrode 13.
Specifically, the S10 further includes:
firstly, providing a target substrate 11, wherein the target substrate 11 is any one of a printed circuit board, a TFT substrate and a CMOS (complementary metal oxide semiconductor) substrate, a plurality of groove structures 12 are provided on a surface of the target substrate 11, and the size and shape of the plurality of groove structures 12 are completely the same; then, a metal film layer is deposited in each groove structure 12 to form a first metal electrode 13, where the first metal electrode 13 is any one of Au, Ag, Au/AuSn, and Au/AuTi, as shown in fig. 2A.
S20, providing a transfer head 21, wherein a plurality of suction heads 22 are arranged on the transfer head 21, the position of each suction head 22 corresponds to the position of each groove structure 12, and the transfer head 21 sucks the conductive colloid 30 through the suction heads 22.
Specifically, the S20 further includes:
a plurality of suction heads 22 are arranged on a transfer head 21, the position of each suction head 22 corresponds to the position of each groove structure 12, the transfer head 21 can suck solder in a vacuum mode, the suction heads 22 are in hollow structures, and the suction heads 22 can suck liquid or fluid conductive materials into the suction heads 22. Then, the transfer head 21 sucks the conductive colloid 30 through the suction head 22, where the conductive colloid 30 is any one of silver sol, gold sol, nano silver solution/sol, nano silver wire solution/sol, graphene solution/sol, and anisotropic conductive adhesive, as shown in fig. 2B.
S30, aligning each suction head 22 of the transfer head 21 with the corresponding groove structure 12, releasing the conductive colloid 30 in the transfer head 21, and placing the conductive colloid 30 in the groove structure 12.
Specifically, the S30 further includes:
aligning each suction head 22 on the transfer head 21 with the corresponding groove structure 12, and releasing the conductive colloid 30 in the transfer head 21 so that the conductive colloid 30 is just placed in the groove structure 12, and the conductive colloid 30 is located on the first metal electrode 13 and completely covers the groove structure 12, as shown in fig. 2C.
S40, transferring the micro led chips 41 including the second metal electrode 42 onto the corresponding groove structures 12 of the target substrate 11 through a transfer substrate, so that the second metal electrode 42 contacts the conductive paste 30.
Specifically, the S40 further includes:
firstly, providing a MicroLED chip 41, and preparing a second metal electrode 42 on the MicroLED chip 41 by a noble metal electrode process, wherein the second metal electrode 42 is any one of Au, Ag, Au/AuSn and Au/AuTi. Then, a plurality of micro led chips 41 including a second metal electrode 42 are transferred onto the groove structure 12 corresponding to the target substrate 11 through a transfer substrate, so that the second metal electrode 42 is in contact with the conductive colloid 30, as shown in fig. 2D.
S50, curing the conductive adhesive 30 by heating, so as to realize reliable electrical connection between the Micro-LED chip 41 and the target substrate 11.
Specifically, the S50 further includes:
firstly, the target substrate 11 is directly heated or the target substrate 11 is heated by infrared rays, so that the conductive colloid in the groove structure 12 is heated and cured into a conductive material layer 31, and the conductive material layer 31 makes the Micro-LED chip 41 bound on the target substrate 11 and electrically connected with the target substrate 11 reliably, as shown in fig. 2E.
FIG. 3 is a top view of a target substrate in the Micro-LED chip transferring method according to the present invention. Preferably, a plurality of the groove structures 12 are distributed in an array, and the bottom surface of each groove structure 12 is square.
FIG. 4 is a schematic cross-sectional view of a transfer head in the transfer method of Micro-LED chips according to the present invention.
Preferably, the plurality of suction heads 22 are hollow structures, and the bottom surfaces of the plurality of suction heads 22 are circular.
FIG. 5 is a schematic structural view of a Micro-LED display panel according to the present invention. The Micro-LED chip comprises a target substrate 51, a first metal electrode 53, a conductive material layer 54, a second metal electrode 55 and a Micro-LED chip 56, wherein the surface of the target substrate 51 is provided with a plurality of groove structures 52, the first metal electrode 53 and the conductive material layer 54 are arranged in the groove structures 52, and the second metal electrode 55 is arranged on the Micro-LED chip 56 and is in contact with the conductive material layer 54.
Preferably, a plurality of the groove structures 52 are distributed in an array, and the bottom surface of each groove structure 52 is square.
Preferably, the plurality of first metal electrodes 53 and the second metal electrodes 55 are any one of Au, Ag, Au/AuSn, and Au/AuTi.
Preferably, the conductive material layer 54 is formed by curing a conductive colloid through a heating method, the heating method includes directly heating the target substrate 51 or heating the target substrate 51 through infrared rays, and the conductive colloid is any one of silver sol, gold sol, nano silver solution/sol, nano silver wire solution/sol, graphene solution/sol, and anisotropic conductive adhesive.
In order to realize the bonding of the Micro LED and the target substrate more simply, simplify the process, save the cost and improve the production rate, the Micro-LED chip transfer method and the Micro-LED display panel provided by the invention realize the purposes of omitting the process of a metal welding layer on the Micro LED and the process of a noble metal electrode of the target substrate, save the material cost and the process, and improve the production rate.
The invention has the beneficial effects that: according to the Micro-LED chip transfer method and the Micro-LED display panel, the groove structure is arranged on the target substrate, and the conductive colloid welding material is released into the groove structure by the transfer head, so that the material cost and the process are saved, and the production rate is further improved.
In summary, although the present invention has been described with reference to the preferred embodiments, the above-described preferred embodiments are not intended to limit the present invention, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention, therefore, the scope of the present invention shall be determined by the appended claims.
Claims (7)
1. A method for transferring Micro-LED chips, the method comprising:
s10, providing a target substrate, wherein the surface of the target substrate is provided with a plurality of groove structures which are distributed in an array shape, the bottom surface of each groove structure is square, and a metal film layer is deposited in each groove structure to form a first metal electrode;
s20, providing a transfer head, wherein the transfer head is provided with a plurality of suction heads, the position of each suction head corresponds to the position of each groove structure, the suction heads are of hollow structures, the bottom surfaces of the suction heads are circular, and the transfer head sucks the conductive colloid through the suction heads;
s30, aligning each suction head on the transfer head to the corresponding groove structure, releasing the conductive colloid in the transfer head, and placing the conductive colloid in the groove structure;
s40, transferring a plurality of Micro-LED chips containing second metal electrodes onto the groove structures corresponding to the target substrate through a transfer substrate, and enabling the second metal electrodes to be in contact with the conductive colloid;
s50, curing the conductive colloid in a heating mode to realize reliable electrical connection between the Micro-LED chip and the target substrate.
2. The transfer method of a Micro-LED chip according to claim 1, wherein in the step S10, the target substrate is any one of a printed circuit board, a TFT substrate and a CMOS substrate.
3. The transfer method of a Micro-LED chip as set forth in claim 1, wherein the first metal electrode and the second metal electrode are any one of Au, Ag, Au/AuSn and Au/AuTi in the steps S10 and S40.
4. The transfer method of a Micro-LED chip according to claim 1, wherein in the step S20, the conductive colloid is any one of silver sol, gold sol, nano silver solution/sol, nano silver wire solution/sol, graphene solution/sol, and anisotropic conductive adhesive.
5. The transfer method of a Micro-LED chip according to claim 1, wherein in the step S50, the heating manner includes heating the target substrate directly or by infrared rays.
6. A Micro-LED display panel prepared by the Micro-LED chip transfer method according to claim 1, comprising a target substrate, a first metal electrode, a conductive material layer, a second metal electrode and a Micro-LED chip, wherein the surface of the target substrate is provided with a plurality of groove structures, the groove structures are distributed in an array shape, the bottom surface of each groove structure is square, the first metal electrode and the conductive material layer are arranged in the groove structures, and the second metal electrode is arranged on the Micro-LED chip and is in contact with the conductive material layer.
7. A Micro-LED display panel according to claim 6, wherein the first and second metal electrodes are any one of Au, Ag, Au/AuSn, Au/AuTi.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910410441.1A CN110212079B (en) | 2019-05-17 | 2019-05-17 | Transfer method of Micro-LED chip and Micro-LED display panel |
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| CN201910410441.1A CN110212079B (en) | 2019-05-17 | 2019-05-17 | Transfer method of Micro-LED chip and Micro-LED display panel |
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| CN110212079B true CN110212079B (en) | 2020-12-08 |
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| CN110783252A (en) * | 2019-10-18 | 2020-02-11 | 南京中电熊猫平板显示科技有限公司 | Micro device transfer head, manufacturing method thereof and micro device transfer method |
| CN112786511B (en) * | 2019-11-04 | 2022-11-22 | 成都辰显光电有限公司 | Transfer substrate and transfer method of micro-component |
| CN110817424B (en) * | 2019-11-20 | 2021-07-20 | 颜色空间(北京)科技有限公司 | Method for adjusting huge distance of tiny electronic components, huge transfer method and equipment |
| CN111430402B (en) * | 2020-03-31 | 2023-06-20 | 京东方科技集团股份有限公司 | Light-emitting component, preparation method thereof, display substrate, backlight module and display device |
| CN111463229A (en) * | 2020-04-09 | 2020-07-28 | 业成科技（成都）有限公司 | Miniature L ED display panel and electronic equipment |
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| CN112968105B (en) * | 2020-04-24 | 2021-12-21 | 重庆康佳光电技术研究院有限公司 | Large transfer method for Micro LED chips and display back panel |
| WO2021217607A1 (en) * | 2020-04-30 | 2021-11-04 | 重庆康佳光电技术研究院有限公司 | Bonding method, display backplate and display backplate manufacturing system |
| WO2022000215A1 (en) * | 2020-06-29 | 2022-01-06 | 重庆康佳光电技术研究院有限公司 | Microfluidic chip, transfer head and manufacturing method therefor, and manufacturing system |
| CN113937200B (en) * | 2020-07-13 | 2023-05-12 | 重庆康佳光电技术研究院有限公司 | Method and system for welding target chip and storage medium |
| CN112967983B (en) * | 2020-09-21 | 2022-05-20 | 重庆康佳光电技术研究院有限公司 | Transfer system and transfer method |
| CN112133210B (en) * | 2020-09-27 | 2022-06-17 | 湖北长江新型显示产业创新中心有限公司 | Micro LED ink-jet printing device, transferring method, display panel and display device |
| CN114335260A (en) * | 2021-12-27 | 2022-04-12 | 深圳市思坦科技有限公司 | LED chip transfer method, transfer substrate preparation method and display device |
| WO2023122962A1 (en) * | 2021-12-28 | 2023-07-06 | 厦门市芯颖显示科技有限公司 | Display apparatus |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106373901A (en) * | 2016-08-31 | 2017-02-01 | 北京无线电测量研究所 | Dispersion glue patch method for microwave bare chip |
| CN107887331A (en) * | 2017-11-11 | 2018-04-06 | 福州大学 | A kind of preparation method of Micro LED light-emitting display devices |
| CN108470526A (en) * | 2018-01-15 | 2018-08-31 | 友达光电股份有限公司 | Display panel and method for manufacturing the same |
| CN108538877A (en) * | 2018-05-17 | 2018-09-14 | 深圳市华星光电技术有限公司 | The production method of Micro LED display panels |
| CN109004078A (en) * | 2018-07-27 | 2018-12-14 | 上海天马微电子有限公司 | Miniature LED display panel and preparation method thereof and display device |
| CN109728022A (en) * | 2017-10-31 | 2019-05-07 | 英属开曼群岛商錼创科技股份有限公司 | Micro-led display panel and its manufacturing method |
-
2019
- 2019-05-17 CN CN201910410441.1A patent/CN110212079B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106373901A (en) * | 2016-08-31 | 2017-02-01 | 北京无线电测量研究所 | Dispersion glue patch method for microwave bare chip |
| CN109728022A (en) * | 2017-10-31 | 2019-05-07 | 英属开曼群岛商錼创科技股份有限公司 | Micro-led display panel and its manufacturing method |
| CN107887331A (en) * | 2017-11-11 | 2018-04-06 | 福州大学 | A kind of preparation method of Micro LED light-emitting display devices |
| CN108470526A (en) * | 2018-01-15 | 2018-08-31 | 友达光电股份有限公司 | Display panel and method for manufacturing the same |
| CN108538877A (en) * | 2018-05-17 | 2018-09-14 | 深圳市华星光电技术有限公司 | The production method of Micro LED display panels |
| CN109004078A (en) * | 2018-07-27 | 2018-12-14 | 上海天马微电子有限公司 | Miniature LED display panel and preparation method thereof and display device |
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