CN110198166B - Pixel circuit and corresponding operation method - Google Patents
Pixel circuit and corresponding operation method Download PDFInfo
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- CN110198166B CN110198166B CN201910456167.1A CN201910456167A CN110198166B CN 110198166 B CN110198166 B CN 110198166B CN 201910456167 A CN201910456167 A CN 201910456167A CN 110198166 B CN110198166 B CN 110198166B
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- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims description 25
- 230000005669 field effect Effects 0.000 claims description 24
- 229910044991 metal oxide Inorganic materials 0.000 claims description 24
- 150000004706 metal oxides Chemical class 0.000 claims description 24
- 238000006243 chemical reaction Methods 0.000 abstract description 13
- 230000035945 sensitivity Effects 0.000 abstract description 7
- 230000005855 radiation Effects 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/017509—Interface arrangements
- H03K19/017518—Interface arrangements using a combination of bipolar and field effect transistors [BIFET]
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/017509—Interface arrangements
- H03K19/017536—Interface arrangements using opto-electronic devices
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- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The present invention relates to a pixel circuit comprising: first to sixth MOSFETs; a Photodiode (PD) whose positive electrode is grounded; and the emitter of the triode is connected with the grid electrode of the fifth MOSFET, and the collector of the triode is grounded. The invention further relates to a method for operating a pixel circuit. The invention can obviously improve the electron-voltage conversion gain of the pixel circuit, thereby obviously improving the sensitivity of the pixel.
Description
Technical Field
The present invention relates generally to the field of integrated circuits, and more particularly to a pixel circuit. The invention further relates to a method for operating a pixel circuit.
Background
The principle of the semiconductor pixel is that the reverse biased PN junction of the photodiode of the pixel generates reverse voltage or current change under the irradiation of radiation with a certain wavelength due to the influence of photo-generated carriers, the change is proportional to the intensity of the light radiation, and the intensity of the light radiation can be determined by detecting the change.
The prior pixel adopts a conversion capacitor C FD To convert the photo-electric signal into a voltage signal. As shown in fig. 1, the output voltage v=q/C FD Where Q is the amount of charge generated by the photodiode as a result of exposure to light radiation. As can be seen from the above formula, the capacitance C is switched FD Will directly affect the magnitude of the output voltage and thus the sensitivity of the pixel. However, the conversion capacitance C cannot be reduced infinitely at present FD Thus, the electron-voltage conversion gain is limited.
Disclosure of Invention
The object of the invention is to provide a pixel circuit and a corresponding operating method, by means of which the electron-voltage conversion gain of the pixel circuit can be increased significantly, so that the sensitivity of the pixel is increased significantly.
In a first aspect of the invention, this object is achieved by a pixel circuit comprising:
a first metal oxide semiconductor field effect transistor MOSFET (RST 3) having its gate connected to the first control signal (Ctr 1) and its drain and source connected to a first voltage (V 1 ) And a cathode of a Photodiode (PD);
a second metal oxide semiconductor field effect transistor MOSFET (RST 2) having its gate connected to the second control signal (Ctr 2) and its drain and source connected to a second voltage (V 2 ) And a cathode of a Photodiode (PD);
a Photodiode (PD) whose positive electrode is grounded;
a third metal oxide semiconductor field effect transistor MOSFET (TG) having a gate connected to a third control signal (Ctr 3) and a drain and a source connected to the cathode of the Photodiode (PD) and the base of the triode, respectively;
an emitter of the triode is connected with a grid electrode of a fifth metal oxide semiconductor field effect transistor MOSFET (Amp/SF), and a collector of the triode is grounded;
a fourth metal oxide semiconductor field effect transistor MOSFET (RST 1) having its gate connected to the fourth control signal (Ctr 4) and its drain and source connected to the second voltage (V 2 ) And an emitter of the triode;
fifth metal oxide semiconductor field effect transistor MOSFET (Amp/SF) having its drain and source connected to the second voltage (V 2 ) And one of a drain and a source of a sixth metal oxide semiconductor field effect transistor MOSFET (Adr/SEL); and
a sixth metal oxide semiconductor field effect transistor MOSFET (Adr/SEL) having its gate connected to the fifth control signal (Ctr 5) and the other of its drain and source as an Output (OP).
It should be noted here that in the present invention, the drain and source are connected in different manners according to the type of MOSFET (e.g., n-type or p-type). When the MOSFET is n-type, its drain is connected to a higher voltage (i.e., the higher of the two terminals) and its source is connected to a lower voltage (i.e., the lower of the two terminals). And vice versa when the MOSFET is p-type. Further, the n-type MOSFET is low-level driven, and the p-type MOSFET is high-level driven. Therefore, in the case of a p-type MOSFET, a boost device such as a charge pump may be required to provide a high level when a control signal is provided.
In a preferred embodiment of the invention, it is provided that the first to sixth MOSFETs are n-type MOSFETs, wherein the drains of the first to sixth MOSFETs are connected to the high voltage terminal and the sources thereof are connected to the low voltage terminal. By employing an n-type MOSFET, low voltage driving can be achieved, thereby saving circuit cost.
In one embodiment of the invention, it is provided that the first voltage (V 1 ) Is a reset voltage, and a second voltage (V 2 ) Is the supply voltage. The magnitudes of the first voltage and the second voltage may be set accordingly, depending on the application. For example, the first voltage may be set equal to the second voltage.
In a further embodiment of the invention, it is provided that the transistor is a PNP bipolar junction transistor. In the case of a PNP bipolar junction transistor, current flows from the emitter to the collector, with the potential of the emitter being highest. The opposite is true when NPN bipolar junction transistors are used. In the present invention, a PNP type bipolar junction transistor is preferably used. But other types of bipolar junction transistors are also contemplated under the teachings of the present invention.
In a second aspect of the invention, the aforementioned object is achieved by an image sensor having a pixel circuit according to the invention. It should be noted here that the pixel circuit of the present invention can be applied to other apparatuses or devices besides an image sensor.
In a third aspect of the invention, the aforementioned task is solved by a method for operating a pixel circuit, comprising the steps of:
providing a corresponding fifth control signal (Ctr 5) such that the fifth MOSFET (Adr/SEL) is turned on;
providing respective fourth (Ctr 4), second (Ctr 2) and third (Ctr 3) control signals such that the fourth (RST 1), second (RST 2) and Third (TG) MOSFETs are turned on, wherein a first output signal (S1) is generated at the Output (OP);
providing respective fourth (Ctr 4), second (Ctr 2) and third (Ctr 3) control signals such that the fourth (RST 1), second (RST 2) and Third (TG) MOSFETs are turned off;
providing a corresponding first control signal (Ctr 1) such that the first MOSFET (RST 3) is turned on;
exposing the Photodiode (PD);
-providing a respective third control signal (Ctr 3) such that the third MOSFET (TG) is turned on, wherein a second output signal (S2) is generated at the Output (OP); and
a corresponding third control signal (Ctr 3) is provided such that the third MOSFET (TG) is turned off.
In a preferred embodiment of the invention, provision is made for the respective fourth (Ctr 4), second (Ctr 2) and third (Ctr 3) control signals to be provided such that the fourth (RST 1), second (RST 2) and Third (TG) MOSFETs are turned on comprising:
the fourth MOSFET (RST 1), the second MOSFET (RST 2) and the third MOSFET (TG) are kept on such that the following equation holds:
V emit ＝V base ＝V 2 ，
where Vemit is the emitter voltage of the triode, and V base Is the base voltage of the triode (V base )。
In a further preferred embodiment of the invention, provision is made for a corresponding third control signal (Ctr 3) to be provided such that the third MOSFET (TG) is switched on, comprising:
the third MOSFET (TG) is kept on so that the following equation holds:
V emit ＝V base ＝(V pd +V 2 )/2，
where Vpd is the photodiode voltage.
In one embodiment of the invention, it is provided that the method further comprises:
a voltage difference between the second output signal (S2) and the first output signal (S2) is determined by a comparator.
The invention has at least the following beneficial effects:in the present invention, the conversion capacitor C is replaced by a transistor (such as a bipolar junction transistor BJT) FD The voltage at the base can be amplified (e.g., V in the case of BJTs emit ＝V base +V collector ，V emit ≈2.11V base ) Thereby amplifying the voltage variation to improve the electron-voltage conversion gain of the pixel circuit, thereby improving the sensitivity of the pixel, and avoiding the conversion capacitor C FD The limitation of the electron-voltage conversion gain, thereby significantly improving the sensitivity of the pixel.
Drawings
The invention is further elucidated below in connection with the embodiments with reference to the drawings.
Fig. 1 shows a schematic diagram of a pixel circuit according to the prior art; and
fig. 2 shows a schematic diagram of a pixel circuit according to the invention.
Detailed Description
It should be noted that the components in the figures may be shown exaggerated for illustrative purposes and are not necessarily to scale. In the drawings, identical or functionally identical components are provided with the same reference numerals.
In the present invention, unless specifically indicated otherwise, "disposed on …", "disposed over …" and "disposed over …" do not preclude the presence of an intermediate therebetween. Furthermore, "disposed on or above" … merely indicates the relative positional relationship between the two components, but may also be converted to "disposed under or below" …, and vice versa, under certain circumstances, such as after reversing the product direction.
In the present invention, the embodiments are merely intended to illustrate the scheme of the present invention, and should not be construed as limiting.
In the present invention, the adjectives "a" and "an" do not exclude a scenario of a plurality of elements, unless specifically indicated.
It should also be noted herein that in embodiments of the present invention, only a portion of the components or assemblies may be shown for clarity and simplicity, but those of ordinary skill in the art will appreciate that the components or assemblies may be added as needed for a particular scenario under the teachings of the present invention.
It should also be noted herein that, within the scope of the present invention, the terms "identical", "equal" and the like do not mean that the two values are absolutely equal, but rather allow for some reasonable error, that is, the terms also encompass "substantially identical", "substantially equal". By analogy, in the present invention, the term "perpendicular", "parallel" and the like in the table direction also covers the meaning of "substantially perpendicular", "substantially parallel".
The numbers of the steps of the respective methods of the present invention are not limited to the order of execution of the steps of the methods. The method steps may be performed in a different order unless otherwise indicated.
In the present invention, "providing a corresponding control signal" means, for example, providing a corresponding parameter (e.g., level) of the control signal such that the control signal having the parameter can activate or deactivate the corresponding device (e.g., turn the device on or off).
The invention is further elucidated below in connection with the embodiments with reference to the drawings.
Fig. 2 shows a schematic diagram of a pixel circuit 100 according to the invention.
As shown in fig. 2, the pixel circuit 100 includes the following components, some of which may be optional:
a first metal oxide semiconductor field effect transistor MOSFET (RST 3) with its gate connected to the first control signal (Ctr 1) and its drain connected to a first voltage (V 1 ) The source of which is connected to the cathode of the Photodiode (PD).
A second metal oxide semiconductor field effect transistor MOSFET (RST 2) with its gate connected to the second control signal (Ctr 2) and its drain connected to a second voltage (V 2 ) The source of which is connected to the cathode of the Photodiode (PD).
A Photodiode (PD) whose anode is grounded. The photodiode may be a conventional photodiode.
A third metal oxide semiconductor field effect transistor MOSFET (TG) with its gate connected to the third control signal (Ctr 3), its drain connected to the cathode of the Photodiode (PD), and its source connected to the base of the triode;
and a triode having an emitter connected to the gate of the fifth metal oxide semiconductor field effect transistor MOSFET (Amp/SF) and a collector grounded. In the present invention, the transistor is a Bipolar Junction Transistor (BJT).
A fourth metal oxide semiconductor field effect transistor MOSFET (RST 1) with its gate connected to the fourth control signal (Ctr 4) and its drain connected to the second voltage (V 2 ) The source of which is connected to the emitter of the transistor.
Fifth metal oxide semiconductor field effect transistor MOSFET (Amp/SF) with its drain connected to the second voltage (V 2 ) The source of which is connected to the drain of a sixth metal oxide semiconductor field effect transistor MOSFET (Adr/SEL).
A sixth metal oxide semiconductor field effect transistor MOSFET (Adr/SEL) whose gate is connected to the fifth control signal (Ctr 5) and whose source is the Output (OP).
The operation of the pixel circuit 100 of the present invention is described below.
In step S1, a corresponding fifth control signal (Ctr 5) is provided (e.g., the fifth control signal is made high), so that the fifth MOSFET (Adr/SEL) is turned on.
In step S2, respective fourth (Ctr 4), second (Ctr 2) and third (Ctr 3) control signals are provided (e.g. made high) such that the fourth (RST 1), second (RST 2) and Third (TG) MOSFETs are turned on, wherein a first output signal (S1) is generated at the Output (OP).
At this time, V emit ＝V base ＝V 2 ，
Where Vemit is the emitter voltage of the triode, and V base Is the base voltage of the triode (V base ). Thus s1=v 2 。
In step S3, the respective fourth control signal (Ctr 4), second control signal (Ctr 2), and third control signal (Ctr 3) are supplied such that the fourth MOSFET (RST 1), second MOSFET (RST 2), and third MOSFET (TG) are turned off (e.g., such that these control signals are low).
In step S4, a corresponding first control signal (Ctr 1) is provided, causing the first MOSFET (RST 3) to conduct. Here, by reverse bias, V pd ＝V 1 Wherein V is pd Is the voltage of the Photodiode (PD).
In step S5, the Photodiode (PD) is exposed to light such that upon irradiation of radiation of a certain wavelength, the photodiode generates photo-generated carriers (the charge quantity of which is Q), and the reverse-biased PN junction effect thereof causes a change in reverse voltage, which is proportional to the intensity of the light radiation.
At this time, V pd ＝V 1 -Q/C pd ，
Wherein C is pd Is the capacitance of the photodiode.
In step S6, a corresponding third control signal (Ctr 3) is provided, causing the third MOSFET (TG) to be turned on, wherein a second output signal (S2) is generated at the Output (OP). Here, the on-time is such that the charge of the transistor (e.g. BJT) is balanced, i.e. the following equation holds:
V emit ＝V base ≈(V pd +V 2 )/2＝(V 1 -Q/C pd +V 2 )/2。
in an optional step S7, a voltage difference Δv=s1-S2 between the first output signal (S1) and the second output signal (S2) is determined by a comparator.
ΔV＝S1-S2≈V 2 -(V 1 -Q/C pd +V 2 )/2＝(Q/C PD -V 1 +V 2 )/2。
As can be seen from this, the voltage variation value of the pixel circuit according to the present invention is equal to that of the prior art (v=q/C FD ) Compared with C, the method has the advantages of significantly improving FD Irrespective of the fact that the first and second parts are.
In step S7, a corresponding third control signal (Ctr 3) is provided, such that the third MOSFET (TG) is turned off.
In optional step S8, after the current full operation is completed, the voltage can be resetV 1 The photodiode is reverse biased for resetting. The foregoing steps may be repeated, for example.
The invention has at least the following beneficial effects: in the present invention, the conversion capacitor C is replaced by a transistor (such as a bipolar junction transistor BJT) FD The voltage at the base can be amplified (e.g., V in the case of BJTs emit ＝V base +V collector ，V emit ≈2.11V base ) Thereby amplifying the voltage variation to improve the electron-voltage conversion gain of the pixel circuit, thereby improving the sensitivity of the pixel, and avoiding the conversion capacitor C FD The limitation of the electron-voltage conversion gain, thereby significantly improving the sensitivity of the pixel.
While certain embodiments of the present invention have been described herein, those skilled in the art will appreciate that these embodiments are shown by way of example only. Numerous variations, substitutions and modifications will occur to those skilled in the art in light of the present teachings without departing from the scope of the invention. The appended claims are intended to define the scope of the invention and to cover such methods and structures within the scope of these claims themselves and their equivalents.
Claims (9)
1. A pixel circuit, comprising:
a first metal oxide semiconductor field effect transistor MOSFET (RST 3) having a gate connected to the first control signal (Ctr 1) and a drain and a source connected to a first voltage (V1) and a cathode of the Photodiode (PD), respectively;
a second metal oxide semiconductor field effect transistor MOSFET (RST 2) having a gate connected to the second control signal (Ctr 2) and a drain and a source connected to the second voltage (V2) and the cathode of the Photodiode (PD), respectively;
a Photodiode (PD) whose positive electrode is grounded;
a third metal oxide semiconductor field effect transistor MOSFET (TG) having a gate connected to a third control signal (Ctr 3) and a drain and a source connected to the cathode of the Photodiode (PD) and the base of the triode, respectively;
an emitter of the triode is connected with a grid electrode of a fifth metal oxide semiconductor field effect transistor MOSFET (Amp/SF), and a collector of the triode is grounded;
a fourth metal oxide semiconductor field effect transistor MOSFET (RST 1) having a gate connected to the fourth control signal (Ctr 4) and having a drain and a source connected to the second voltage (V2) and the emitter of the transistor, respectively;
a fifth metal oxide semiconductor field effect transistor MOSFET (Amp/SF) having a drain and a source connected to one of the drain and the source of the second voltage (V2) and the sixth metal oxide semiconductor field effect transistor MOSFET (Adr/SEL), respectively; and
a sixth metal oxide semiconductor field effect transistor MOSFET (Adr/SEL) having its gate connected to the fifth control signal (Ctr 5) and the other of its drain and source as an Output (OP).
2. The pixel circuit of claim 1, wherein the first through sixth MOSFETs are n-type MOSFETs, wherein drains of the first through sixth MOSFETs are connected to the high voltage terminal and sources thereof are connected to the low voltage terminal.
3. A pixel circuit according to claim 1, wherein the first voltage (V1) is a reset voltage and the second voltage (V2) is a supply voltage.
4. The pixel circuit of claim 1, wherein the transistor is a PNP Bipolar Junction Transistor (BJT).
5. An image sensor having a pixel circuit according to one of claims 1 to 2.
6. A method for operating a pixel circuit according to one of claims 1 to 4, comprising the steps of: providing a corresponding fifth control signal (Ctr 5) such that the fifth MOSFET (Adr/SEL) is turned on;
providing respective fourth (Ctr 4), second (Ctr 2) and third (Ctr 3) control signals such that the fourth (RST 1), second (RST 2) and Third (TG) MOSFETs are turned on, wherein a first output signal S1 is generated at the Output (OP);
providing respective fourth (Ctr 4), second (Ctr 2) and third (Ctr 3) control signals such that the fourth (RST 1), second (RST 2) and Third (TG) MOSFETs are turned off;
providing a corresponding first control signal (Ctr 1) such that the first MOSFET (RST 3) is turned on; exposing the Photodiode (PD);
providing a corresponding third control signal (Ctr 3) such that the third MOSFET (TG) is turned on, wherein a second output signal S2 is generated at the Output (OP); and
a corresponding third control signal (Ctr 3) is provided such that the third MOSFET (TG) is turned off.
7. The method of claim 6, wherein providing respective fourth (Ctr 4), second (Ctr 2) and third (Ctr 3) control signals such that the fourth (RST 1), second (RST 2) and Third (TG) MOSFETs are turned on comprises:
the fourth MOSFET (RST 1), the second MOSFET (RST 2) and the third MOSFET (TG) are kept on so that the following equations
The establishment is as follows:
Vemit＝Vbase＝V2，
where Vemit is the emitter voltage of the transistor and Vbase is the base voltage of the transistor.
8. The method of claim 7, wherein providing a respective third control signal (Ctr 3) such that the third MOSFET (TG) is turned on comprises:
the third MOSFET (TG) is kept on so that the following equation holds: vemit=vbase= (vpd+v2)/2, where Vpd is the photodiode voltage.
9. The method of claim 6, further comprising: the voltage difference between the first output signal S1 and the second output signal S2 is determined by a comparator.
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| CN104135633A (en) * | 2014-08-25 | 2014-11-05 | 北京思比科微电子技术股份有限公司 | Image sensor pixel with changeable conversion gain and working method thereof |
| CN105120186A (en) * | 2015-09-16 | 2015-12-02 | 上海集成电路研发中心有限公司 | Pixel unit structure with adjustable conversion gain and signal collection method therefor |
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| CN208227176U (en) * | 2018-06-20 | 2018-12-11 | 上海晔芯电子科技有限公司 | Pixel circuit and image sensor apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104217681B (en) * | 2014-09-02 | 2016-08-17 | 武汉天马微电子有限公司 | A kind of image element circuit, display floater and display device |
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| CN104135633A (en) * | 2014-08-25 | 2014-11-05 | 北京思比科微电子技术股份有限公司 | Image sensor pixel with changeable conversion gain and working method thereof |
| CN105120186A (en) * | 2015-09-16 | 2015-12-02 | 上海集成电路研发中心有限公司 | Pixel unit structure with adjustable conversion gain and signal collection method therefor |
| CN107147857A (en) * | 2017-05-17 | 2017-09-08 | 上海集成电路研发中心有限公司 | A kind of highly sensitive phase-detection pixel cell and its driving method |
| CN208227176U (en) * | 2018-06-20 | 2018-12-11 | 上海晔芯电子科技有限公司 | Pixel circuit and image sensor apparatus |
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