CN110198166A - A kind of pixel circuit and corresponding operation method - Google Patents
A kind of pixel circuit and corresponding operation method Download PDFInfo
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- CN110198166A CN110198166A CN201910456167.1A CN201910456167A CN110198166A CN 110198166 A CN110198166 A CN 110198166A CN 201910456167 A CN201910456167 A CN 201910456167A CN 110198166 A CN110198166 A CN 110198166A
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- 239000004065 semiconductor Substances 0.000 claims description 26
- 230000005669 field effect Effects 0.000 claims description 24
- 229910044991 metal oxide Inorganic materials 0.000 claims description 24
- 150000004706 metal oxides Chemical class 0.000 claims description 24
- 101100041125 Arabidopsis thaliana RST1 gene Proteins 0.000 claims description 13
- 101100443250 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) DIG1 gene Proteins 0.000 claims description 13
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- 238000006243 chemical reaction Methods 0.000 abstract description 14
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/017509—Interface arrangements
- H03K19/017518—Interface arrangements using a combination of bipolar and field effect transistors [BIFET]
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/017509—Interface arrangements
- H03K19/017536—Interface arrangements using opto-electronic devices
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Abstract
The present invention relates to a kind of pixel circuits, comprising: the first to the 6th MOSFET；Photodiode (PD), plus earth；Triode, emitter are connect with the grid of the 5th MOSFET, grounded collector.Moreover, it relates to a kind of method for running pixel circuit.By the invention it is possible to electronics-voltage conversion gain of pixel circuit be significantly improved, to significantly improve the sensitivity of pixel.
Description
Technical field
Present invention is generally directed to integrated circuit fields, in particular to a kind of pixel circuit.In addition, the present invention is also
It is related to a kind of method for running pixel circuit.
Background technique
Semiconductor is a kind of to be widely used in the various fields such as imaging field, fiber optic communication field, laser ranging
Important semiconductor devices is used to convert optical signals into voltage signal, and principle is, the photodiode of pixel it is reversed partially
The PN junction set is under the irradiation of certain wavelength radiation, since the influence of photo-generated carrier will appear the change of backward voltage or electric current
Change, the variation is proportional by force to light radiation, can determine light radiation intensity by detecting the variation.
Existing pixel is using conversion capacitor CFDIt is voltage signal by photoelectric signal transformation.As shown in Figure 1, output voltage V
=Q/CFD, wherein Q is that photodiode generates the quantity of electric charge due to by light radiation.From the equations above as can be seen that conversion electricity
Hold CFDSize will directly affect the size of output voltage, to influence the sensitivity of pixel.However, at present can't be ad infinitum
Reduce conversion capacitor CFD, therefore electronics-voltage conversion gain is restricted.
Summary of the invention
The task of the present invention is provide a kind of pixel circuit and corresponding operation method, pass through the pixel circuit and/or the party
Method, can significantly improve electronics-voltage conversion gain of pixel circuit, to significantly improve the sensitivity of pixel.
In the first aspect of the present invention, which is solved by a kind of pixel circuit, which includes:
First Metal Oxide Semiconductor Field Effect Transistor MOSFET (RST3), grid is connected to first control signal
(Ctr1), drain electrode and source electrode are connected respectively to first voltage (V1) and photodiode (PD) cathode；
Second Metal Oxide Semiconductor Field Effect Transistor MOSFET (RST2), grid is connected to second control signal
(Ctr2), drain electrode and source electrode are connected respectively to second voltage (V2) and photodiode (PD) cathode；
Photodiode (PD), plus earth；
Third Metal Oxide Semiconductor Field Effect Transistor MOSFET (TG), grid are connected to third control signal
(Ctr3), drain electrode and source electrode are connected respectively to the cathode of photodiode (PD) and the base stage of triode；
Triode, the grid of emitter and fifth metal oxide semiconductor field effect transistor MOSFET (Amp/SF)
Connection, grounded collector；
4th Metal Oxide Semiconductor Field Effect Transistor MOSFET (RST1), grid are connected to the 4th control signal
(Ctr4), drain electrode and source electrode are connected respectively to second voltage (V2) and triode emitter；
Fifth metal oxide semiconductor field effect transistor MOSFET (Amp/SF), drain electrode and source electrode are connected respectively to
Second voltage (V2) and the 6th Metal Oxide Semiconductor Field Effect Transistor MOSFET (Adr/SEL) drain electrode and source electrode it
One；And
6th Metal Oxide Semiconductor Field Effect Transistor MOSFET (Adr/SEL), grid are connected to the 5th control
Signal (Ctr5), drain electrode and another conduct output end (OP) in source electrode.
It should be noted here that in the present invention, drain electrode and source electrode different (such as N-shaped or p-type) according to the type of MOSFET
Connection type it is different.When MOSFET is N-shaped, drain electrode is connected to high voltage (the i.e. higher end of voltage in two terminals
Son), and its source electrode is connected to lower voltage (i.e. the lower terminal of voltage in two terminals).And so on, when MOSFET is p-type
When it is on the contrary.In addition, N-shaped MOSFET is low level driving, and p-type MOSFET is high level driving.Therefore, p-type MOSFET's
In the case of, it may need to provide high level using increasing apparatus such as charge pumps when providing and controlling signal.
It is provided in a preferred embodiment of the invention, the first to the 6th MOSFET is N-shaped MOSFET, wherein first to the
The drain electrode of six MOSFET is connected to high voltage end, and source electrode is connected to low-voltage end.By using N-shaped MOSFET, may be implemented
Low voltage drive, to save circuit cost.
It is provided in an expansion scheme of the invention, first voltage (V1) it is resetting voltage, and second voltage (V2) be
Supply voltage.According to application, the size of first voltage and second voltage can be correspondingly arranged.For example, can be set
One voltage is equal to second voltage.
It is provided in another expansion scheme of the invention, the triode is positive-negative-positive bipolar junction transistor.In positive-negative-positive
In the case where bipolar junction transistor, electric current flows to collector from emitter, wherein the current potential highest of emitter.Using NPN
When type bipolar junction transistor, situation is opposite.In the present invention, it is preferred to use positive-negative-positive bipolar junction transistor.But in this hair
It the use of other type bipolar junction transistors is also conceivable under bright introduction.
In the second aspect of the present invention, foregoing task is solved by a kind of imaging sensor, which has
Pixel circuit according to the present invention.It should be noted here that pixel circuit of the invention can also answer other than imaging sensor
For other equipment or device.
In the third aspect of the present invention, foregoing task is solved by a kind of for running the method for pixel circuit, the party
Method includes the following steps:
Corresponding 5th control signal (Ctr5) is provided, so that the 5th MOSFET (Adr/SEL) is connected；
Corresponding 4th control signal (Ctr4), second control signal (Ctr2) and third control signal (Ctr3) are provided,
So that the 4th MOSFET (RST1), the 2nd MOSFET (RST2) and the 3rd MOSFET (TG) conducting, wherein at output end (OP)
Generate the first output signal (S1)；
Corresponding 4th control signal (Ctr4), second control signal (Ctr2) and third control signal (Ctr3) are provided,
So that the 4th MOSFET (RST1), the 2nd MOSFET (RST2) and the 3rd MOSFET (TG) cut-off；
Corresponding first control signal (Ctr1) is provided, so that the first MOSFET (RST3) is connected；
Photodiode (PD) is exposed；
Corresponding third control signal (Ctr3) is provided, so that the 3rd MOSFET (TG) is connected, wherein at output end (OP)
Place generates the second output signal (S2)；And
Corresponding third control signal (Ctr3) is provided, so that the 3rd MOSFET (TG) ends.
It is provided in a preferred embodiment of the invention, corresponding 4th control signal (Ctr4), the second control letter is provided
Number (Ctr2) and third control signal (Ctr3), so that the 4th MOSFET (RST1), the 2nd MOSFET (RST2) and third
MOSFET (TG) is connected
4th MOSFET (RST1), the 2nd MOSFET (RST2) and the 3rd MOSFET (TG) are held on, so that following
Equation is set up:
Vemit=Vbase=V2,
Wherein Vemit is the emitter voltage of triode, and VbaseIt is the base voltage (V of triodebase)。
It provides in another preferred embodiment of the invention, corresponding third control signal (Ctr3) is provided, so that third
MOSFET (TG) is connected
3rd MOSFET (TG) is held on, so that following equalities are set up:
Vemit=Vbase=(Vpd+V2)/2,
Wherein Vpd is photodiode voltage.
It is provided in an expansion scheme of the invention, this method further include:
Voltage difference between second output signal (S2) and the first output signal (S2) is determined by comparator.
The present invention at least have it is following the utility model has the advantages that in the present invention, by with transistor (such as bipolar junction transistor
BJT) replacement conversion capacitor CFD, can amplify base stage voltage (such as in the case where BJT, Vemit=Vbase+Vcollector,
Vemit≈2.11Vbase), thus amplify voltage change, to improve electronics-voltage conversion gain of pixel circuit, and then improves
The sensitivity of pixel, while also avoiding conversion capacitor CFDTo the limitation of electronics-voltage conversion gain, pixel is thus significantly improved
Sensitivity.
Detailed description of the invention
The present invention is further elucidated with reference to the drawings With reference to embodiment.
Fig. 1 shows the schematic diagram of pixel circuit according to prior art；And
Fig. 2 shows the schematic diagrams of pixel circuit according to the present invention.
Specific embodiment
It should be pointed out that each component in each attached drawing may be shown in which be exaggerated in order to illustrate, and it is not necessarily ratio
Example is correctly.In the drawings, identical appended drawing reference is equipped with to the identical component of identical or function.
In the present invention, unless otherwise indicated, " on being arranged in ... ", " being arranged in ... top " and " on being arranged in ... "
Do not exclude the case where there are intermediaries therebetween.In addition, being merely representative of " above being arranged in ... " between two components
Relative positional relationship, and in any case, such as after the reverse line of production, can also be converted to " be arranged in ... it is lower or under
Side ", vice versa.
In the present invention, each embodiment is intended only to illustrate the solution of the present invention, and is understood not to restrictive.
In the present invention, unless otherwise indicated, quantifier "one", " one " and the scene for not excluding element.
It is also noted herein that in an embodiment of the present invention, for it is clear, for the sake of simplicity, might show only one
Sub-unit or component, but those skilled in the art are it is understood that under the teachings of the present invention, it can be according to concrete scene
Need to add required component or component.
It is also noted herein that within the scope of the invention, the wording such as " identical ", " equal ", " being equal to " are not meant to
The two numerical value is absolutely equal, but allows certain reasonable error, that is to say, that the wording also contemplated " substantially phase
Together ", " being essentially equal ", " being substantially equal to ".And so on, it is in the present invention, the term " perpendicular to " of apparent bearing, " parallel
In " etc. be likewise covered by the meaning of " being substantially perpendicular to ", " being arranged essentially parallel to ".
In addition, the number of the step of each method of the invention limit the method step execute sequence.Unless special
It does not point out, various method steps can be executed with different order.
In the present invention, it " provides corresponding control signal " for example to refer to, provides the relevant parameter of the control signal (such as electricity
It is flat), enable the control signal with the parameter to activate or stop activating corresponding device (such as making break-over of device or cut-off).
The present invention is further elucidated with reference to the drawings With reference to embodiment.
Fig. 2 shows the schematic diagrams of pixel circuit 100 according to the present invention.
As shown in Fig. 2, pixel circuit 100 includes following component, some of components may be optional:
First Metal Oxide Semiconductor Field Effect Transistor MOSFET (RST3), grid are connected to the first control letter
Number (Ctr1), drain electrode are connected to first voltage (V1), source electrode is connected to the cathode of photodiode (PD).
Second Metal Oxide Semiconductor Field Effect Transistor MOSFET (RST2), grid are connected to the second control letter
Number (Ctr2), drain electrode are connected to second voltage (V2), source electrode is connected to the cathode of photodiode (PD).
Photodiode (PD), plus earth.The photodiode can be conventional photodiode.
Third Metal Oxide Semiconductor Field Effect Transistor MOSFET (TG), grid are connected to third control signal
(Ctr3), drain electrode is connected to the cathode of photodiode (PD), and source electrode is connected to the base stage of triode；
Triode, the grid of emitter and fifth metal oxide semiconductor field effect transistor MOSFET (Amp/SF)
Pole connection, grounded collector.In the present invention, triode is bipolar junction transistor (BJT).
4th Metal Oxide Semiconductor Field Effect Transistor MOSFET (RST1), grid are connected to the 4th control letter
Number (Ctr4), drain electrode are connected to second voltage (V2), source electrode is connected to the emitter of triode.
Fifth metal oxide semiconductor field effect transistor MOSFET (Amp/SF), drain electrode are connected to second voltage
(V2), source electrode is connected to the drain electrode of the 6th Metal Oxide Semiconductor Field Effect Transistor MOSFET (Adr/SEL).
6th Metal Oxide Semiconductor Field Effect Transistor MOSFET (Adr/SEL), grid are connected to the 5th control
Signal (Ctr5) processed, source electrode is as output end (OP).
The method of operation of pixel circuit 100 of the invention is described below.
In step S1, corresponding 5th control signal (Ctr5) (such as making the 5th control signal high level) is provided, is made
Obtain the 5th MOSFET (Adr/SEL) conducting.
In step S2, corresponding 4th control signal (Ctr4), second control signal (Ctr2) and third control letter are provided
Number (Ctr3) (such as these is made to control signal high level) so that the 4th MOSFET (RST1), the 2nd MOSFET (RST2) and
3rd MOSFET (TG) conducting, wherein generating the first output signal (S1) at output end (OP).
At this point, Vemit=Vbase=V2,
Wherein Vemit is the emitter voltage of triode, and VbaseIt is the base voltage (V of triodebase).Therefore, S1
=V2。
In step S3, corresponding 4th control signal (Ctr4), second control signal (Ctr2) and third control letter are provided
Number (Ctr3), so that the 4th MOSFET (RST1), the 2nd MOSFET (RST2) and the 3rd MOSFET (TG) cut-off (such as make this
A little control signals are low level).
In step S4, corresponding first control signal (Ctr1) is provided, so that the first MOSFET (RST3) is connected.Here,
By reverse bias, so that Vpd=V1, wherein VpdIt is the voltage of photodiode (PD).
In step S5, photodiode (PD) is exposed, so that photodiode is under the irradiation of certain wavelength radiation, by
In can generate photo-generated carrier (its quantity of electric charge be Q), and then the PN junction of its reverse bias influences the variation that will appear backward voltage,
The variation is proportional by force to light radiation.
At this point, Vpd=V1-Q/Cpd,
Wherein CpdIt is the capacitor of photodiode.
In step S6, corresponding third control signal (Ctr3) is provided, so that the 3rd MOSFET (TG) is connected, wherein defeated
The second output signal (S2) is generated at outlet (OP).Here, turn-on time is so that the charge of triode (such as BJT) reaches flat
Weighing apparatus has following equation to set up:
Vemit=Vbase≈(Vpd+V2)/2=(V1-Q/Cpd+V2)/2。
In optional step S7, the voltage between the first output signal (S1) and the second output signal (S2) is determined by comparator
Poor Δ V=S1-S2.
Δ V=S1-S2 ≈ V2-(V1-Q/Cpd+V2)/2=(Q/CPD-V1+V2)/2。
It can be seen, the voltage change of pixel circuit according to the present invention and the prior art (V=Q/CFD) phase
Than being obviously improved, and and CFDIt is unrelated.
In step S7, corresponding third control signal (Ctr3) is provided, so that the 3rd MOSFET (TG) ends.
In optional step S8, after the completion of current all operationss, resetting voltage V can be passed through1Photodiode is carried out
Reverse bias is to be resetted.Such as repeatable abovementioned steps.
The present invention at least have it is following the utility model has the advantages that in the present invention, by with transistor (such as bipolar junction transistor
BJT) replacement conversion capacitor CFD, can amplify base stage voltage (such as in the case where BJT, Vemit=Vbase+Vcollector,
Vemit≈2.11Vbase), thus amplify voltage change, to improve electronics-voltage conversion gain of pixel circuit, and then improves
The sensitivity of pixel, while also avoiding conversion capacitor CFDTo the limitation of electronics-voltage conversion gain, pixel is thus significantly improved
Sensitivity.
Although some embodiments of the present invention are described in present specification, those skilled in the art
Member is it is understood that these embodiments are merely possible to shown in example.Those skilled in the art under the teachings of the present invention may be used
To expect numerous variant schemes, alternative solution and improvement project without beyond the scope of this invention.The appended claims purport
It is limiting the scope of the invention, and is covering the method in the range of these claims itself and its equivalents and knot whereby
Structure.
Claims (9)
1. a kind of pixel circuit, comprising:
First Metal Oxide Semiconductor Field Effect Transistor MOSFET (RST3), grid is connected to first control signal
(Ctr1), drain electrode and source electrode are connected respectively to first voltage (V1) and photodiode (PD) cathode；
Second Metal Oxide Semiconductor Field Effect Transistor MOSFET (RST2), grid is connected to second control signal
(Ctr2), drain electrode and source electrode are connected respectively to second voltage (V2) and photodiode (PD) cathode；
Photodiode (PD), plus earth；
Third Metal Oxide Semiconductor Field Effect Transistor MOSFET (TG), grid are connected to third control signal
(Ctr3), drain electrode and source electrode are connected respectively to the cathode of photodiode (PD) and the base stage of triode；
The grid of triode, emitter and fifth metal oxide semiconductor field effect transistor MOSFET (Amp/SF) connect
It connects, grounded collector；
4th Metal Oxide Semiconductor Field Effect Transistor MOSFET (RST1), grid are connected to the 4th control signal
(Ctr4), drain electrode and source electrode are connected respectively to second voltage (V2) and triode emitter；
Fifth metal oxide semiconductor field effect transistor MOSFET (Amp/SF), drain electrode and source electrode are connected respectively to second
Voltage (V2) and the 6th Metal Oxide Semiconductor Field Effect Transistor MOSFET (Adr/SEL) drain electrode and one of source electrode；With
And
6th Metal Oxide Semiconductor Field Effect Transistor MOSFET (Adr/SEL), grid are connected to the 5th control signal
(Ctr5), another as output end (OP) in drain electrode and source electrode.
2. pixel circuit according to claim 1, wherein the first to the 6th MOSFET is N-shaped MOSFET, wherein first to
The drain electrode of 6th MOSFET is connected to high voltage end, and source electrode is connected to low-voltage end.
3. pixel circuit according to claim 1, wherein first voltage (V1) it is resetting voltage, and second voltage (V2)
It is supply voltage.
4. pixel circuit according to claim 1, wherein the triode is positive-negative-positive bipolar junction transistor (BJT).
5. a kind of imaging sensor has according to claim 1 to pixel circuit described in one of 2.
6. a kind of for running according to claim 1 to the method for pixel circuit described in one of 4, including the following steps:
Corresponding 5th control signal (Ctr5) is provided, so that the 5th MOSFET (Adr/SEL) is connected；
Corresponding 4th control signal (Ctr4), second control signal (Ctr2) and third control signal (Ctr3) are provided, so that
4th MOSFET (RST1), the 2nd MOSFET (RST2) and the 3rd MOSFET (TG) conducting, wherein being generated at output end (OP)
First output signal (S1)；
Corresponding 4th control signal (Ctr4), second control signal (Ctr2) and third control signal (Ctr3) are provided, so that
4th MOSFET (RST1), the 2nd MOSFET (RST2) and the 3rd MOSFET (TG) cut-off；
Corresponding first control signal (Ctr1) is provided, so that the first MOSFET (RST3) is connected；
Photodiode (PD) is exposed；
Corresponding third control signal (Ctr3) is provided, so that the 3rd MOSFET (TG) is connected, wherein raw at output end (OP)
At the second output signal (S2)；And
Corresponding third control signal (Ctr3) is provided, so that the 3rd MOSFET (TG) ends.
7. according to the method described in claim 6, wherein providing corresponding 4th control signal (Ctr4), second control signal
(Ctr2) and third controls signal (Ctr3), so that the 4th MOSFET (RST1), the 2nd MOSFET (RST2) and the 3rd MOSFET
(TG) it is connected and includes:
4th MOSFET (RST1), the 2nd MOSFET (RST2) and the 3rd MOSFET (TG) are held on, so that following equalities
It sets up:
Vemit=Vbase=V2,
Wherein Vemit is the emitter voltage of triode, and VbaseIt is the base voltage (V of triodebase)。
8. according to the method described in claim 7, corresponding third control signal (Ctr3) is wherein provided, so that the 3rd MOSFET
(TG) it is connected and includes:
3rd MOSFET (TG) is held on, so that following equalities are set up:
Vemit=Vbase=(Vpd+V2)/2,
Wherein Vpd is photodiode voltage.
9. according to the method described in claim 6, further include:
Voltage difference between first output signal (S1) and the second output signal (S2) is determined by comparator.
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|---|---|---|---|
| CN201910456167.1A CN110198166B (en) | 2019-05-29 | 2019-05-29 | Pixel circuit and corresponding operation method |
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| CN201910456167.1A CN110198166B (en) | 2019-05-29 | 2019-05-29 | Pixel circuit and corresponding operation method |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104135633A (en) * | 2014-08-25 | 2014-11-05 | 北京思比科微电子技术股份有限公司 | Image sensor pixel with changeable conversion gain and working method thereof |
| CN105120186A (en) * | 2015-09-16 | 2015-12-02 | 上海集成电路研发中心有限公司 | Pixel unit structure with adjustable conversion gain and signal collection method therefor |
| US20160063923A1 (en) * | 2014-09-02 | 2016-03-03 | Wuhan Tianma Micro-Electronics Co., Ltd. | Pixel circuit, display panel, and display device |
| CN107147857A (en) * | 2017-05-17 | 2017-09-08 | 上海集成电路研发中心有限公司 | A kind of highly sensitive phase-detection pixel cell and its driving method |
| CN208227176U (en) * | 2018-06-20 | 2018-12-11 | 上海晔芯电子科技有限公司 | Pixel circuit and image sensor apparatus |
-
2019
- 2019-05-29 CN CN201910456167.1A patent/CN110198166B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104135633A (en) * | 2014-08-25 | 2014-11-05 | 北京思比科微电子技术股份有限公司 | Image sensor pixel with changeable conversion gain and working method thereof |
| US20160063923A1 (en) * | 2014-09-02 | 2016-03-03 | Wuhan Tianma Micro-Electronics Co., Ltd. | Pixel circuit, display panel, and display device |
| CN105120186A (en) * | 2015-09-16 | 2015-12-02 | 上海集成电路研发中心有限公司 | Pixel unit structure with adjustable conversion gain and signal collection method therefor |
| CN107147857A (en) * | 2017-05-17 | 2017-09-08 | 上海集成电路研发中心有限公司 | A kind of highly sensitive phase-detection pixel cell and its driving method |
| CN208227176U (en) * | 2018-06-20 | 2018-12-11 | 上海晔芯电子科技有限公司 | Pixel circuit and image sensor apparatus |
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