CN110164774A - 陶瓷基板组件及其制造方法 - Google Patents
陶瓷基板组件及其制造方法 Download PDFInfo
- Publication number
- CN110164774A CN110164774A CN201910415054.7A CN201910415054A CN110164774A CN 110164774 A CN110164774 A CN 110164774A CN 201910415054 A CN201910415054 A CN 201910415054A CN 110164774 A CN110164774 A CN 110164774A
- Authority
- CN
- China
- Prior art keywords
- ceramic substrate
- glass
- glass glaze
- titanium dioxide
- glaze
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 63
- 239000000919 ceramic Substances 0.000 title claims abstract description 57
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000011521 glass Substances 0.000 claims abstract description 38
- 239000004408 titanium dioxide Substances 0.000 claims abstract description 18
- 238000003466 welding Methods 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 10
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 abstract description 6
- 238000007639 printing Methods 0.000 abstract description 2
- 238000005245 sintering Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000006071 cream Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 241000790917 Dioxys <bee> Species 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4825—Connection or disconnection of other leads to or from flat leads, e.g. wires, bumps, other flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Abstract
本申请陶瓷基板组件及其制造方法,该陶瓷基板组件包括陶瓷基板,以及在陶瓷基板上均匀涂敷的玻璃釉,陶瓷基板线路上需要焊接芯片或导线的焊盘露出于玻璃釉外。其制造方法包括:(1)制作依照线路设计做好电路的陶瓷基板;(2)在做好线路的陶瓷基板上均匀涂敷玻璃釉,需要焊接芯片或导线的焊盘露出,(3)在涂敷好玻璃釉的陶瓷基板上焊接芯片。在陶瓷基板上印刷白色玻璃釉后,线路层受到保护,产品可靠性提高。该白色玻璃釉的反射率(调节可达到93%‑98%)高于陶瓷基板(85%‑90%),COB亮度提升。玻璃和二氧化钛均为无机物,在高温环境下性能稳定,产品可靠性提升。
Description
【技术领域】
本申请涉及电子领域,尤其是涉及一种陶瓷基板组件及其制造方法。
【背景技术】
现有技术中,陶瓷基板上方银线路通过烧结的方式与陶瓷板结合,焊盘上方无保护层。该方案优点是工艺简单,成本低;缺点是芯片焊盘尺寸精度低,焊盘无保护容易被氧化,功能区反射率低亮度低。另外一些技术方案,陶瓷基板上方银线路通过烧结的方式与陶瓷板结合,焊盘上方有白色油墨作为保护层。该方案优点是芯片焊盘尺寸精度高,反射率高;缺点是白油属于有机物,高温下容易变色,长期使用白油易脱落,可靠性差。
因此,提供一种可靠性高的陶瓷基板实为必要。
【发明内容】
本申请的目的在于提供一种可靠性高的陶瓷基板组件及其制造方法。
为实现本申请目的,提供以下技术方案:
本申请提供一种陶瓷基板组件制造方法,其包括如下步骤:
(1)制作依照线路设计做好电路的陶瓷基板;
(2)在做好线路的陶瓷基板上均匀涂敷玻璃釉,需要焊接芯片或导线的焊盘露出,
(3)在涂敷好玻璃釉的陶瓷基板上焊接芯片。
一些实施方式中,基板上方涂敷玻璃釉是通过烧结方式与基板和线路层结合。
一些实施方式中,该玻璃釉为白色,该玻璃釉包括有二氧化硅和二氧化钛,是将二氧化钛均匀的混合到透明玻璃中,二氧化钛的重量浓度为20%-80%之间。
一些实施方式中,该玻璃釉通过丝网印刷的方式均匀涂敷到做好线路的陶瓷基板上。
一些实施方式中,该玻璃釉的印刷厚度控制在5um-50um之间。
本申请还提供一种陶瓷基板组件,其包括陶瓷基板,以及在陶瓷基板上均匀涂敷的玻璃釉,陶瓷基板线路上需要焊接芯片或导线的焊盘露出于玻璃釉外。
一些实施方式中,该玻璃釉为白色,该玻璃釉包括有二氧化硅和二氧化钛,是将二氧化钛均匀的混合到透明玻璃中,二氧化钛的重量浓度为20%-80%之间。
一些实施方式中,该玻璃釉的印刷厚度在5um-50um之间。
对比现有技术,本申请具有以下优点:
在陶瓷基板上印刷白色玻璃釉后,线路层受到保护,产品可靠性提高。该白色玻璃釉的反射率(调节可达到93%-98%)高于陶瓷基板(85%-90%),COB亮度提升。玻璃和二氧化钛均为无机物,在高温环境下性能稳定,产品可靠性提升。
【附图说明】
图1为本发明陶瓷基板组件的俯视图;
图2为本发明陶瓷基板组件的剖面示意图。
【具体实施方式】
请参阅图1和图2,本申请陶瓷基板组件包括陶瓷基板110,以及在陶瓷基板上均匀涂敷的玻璃釉150,陶瓷基板线路层120上需要焊接芯片130或导线的焊盘140露出于玻璃釉150外,也就是芯片两个焊盘之间不涂玻璃釉(外开窗)。芯片130通过锡膏141与焊盘140焊接。
具体的,该玻璃釉150为白色,该玻璃釉包括有二氧化硅和二氧化钛,是将二氧化钛均匀的混合到透明玻璃中,二氧化钛的重量浓度为20%-80%之间。一般来说,二氧化钛的浓度越高其反射率越高,但同时考虑到粘结力,采用浓度范围为20%-80%。该玻璃釉的印刷厚度在5um-50um之间,厚度越大基板反射率越高。
本申请提供一种陶瓷基板组件制造方法,其包括如下步骤:
(1)制作依照线路设计做好电路的陶瓷基板;
(2)在做好线路的陶瓷基板上均匀涂敷玻璃釉,需要焊接芯片或导线的焊盘露出,
(3)在涂敷好玻璃釉的陶瓷基板上焊接芯片。
陶瓷基板上方涂敷玻璃釉是通过烧结方式与基板和线路层结合。基板上方(除焊盘位置外)涂敷白色的玻璃釉150,通过烧结方式与陶瓷基板和线路层120结合。并且该玻璃釉通过丝网印刷的方式均匀涂敷到做好线路的陶瓷基板上。陶瓷基板上方银线路依然通过烧结方式制作。
该玻璃釉为白色,该玻璃釉包括有二氧化硅和二氧化钛,是将二氧化钛均匀的混合到透明玻璃中,二氧化钛的重量浓度为20%-80%之间。该玻璃釉的印刷厚度控制在5um-50um之间。
芯片通过回流焊或共晶的方式焊接在内部焊盘上,焊接后锡膏厚度控制在10um-50um,厚度太小空洞率高,厚度过高散热不良。
芯片焊接后的其他工艺可以采用与常规COB一致方式。
以上所述仅为本申请的较佳实施例,本申请的保护范围并不局限于此,任何基于本申请技术方案上的等效变换均属于本申请保护范围之内。
Claims (8)
1.一种陶瓷基板组件制造方法,其特征在于,其包括如下步骤:
(1)制作依照线路设计做好电路的陶瓷基板;
(2)在做好线路的陶瓷基板上均匀涂敷玻璃釉,需要焊接芯片或导线的焊盘露出,
(3)在涂敷好玻璃釉的陶瓷基板上焊接芯片。
2.如权利要求1所述的陶瓷基板组件制造方法,其特征在于,基板上方涂敷玻璃釉是通过烧结方式与基板和线路层结合。
3.如权利要求1所述的陶瓷基板组件制造方法,其特征在于,该玻璃釉为白色,该玻璃釉包括有二氧化硅和二氧化钛,是将二氧化钛均匀的混合到透明玻璃中,二氧化钛的重量浓度为20%-80%之间。
4.如权利要求1所述的陶瓷基板组件制造方法,其特征在于,该玻璃釉通过丝网印刷的方式均匀涂敷到做好线路的陶瓷基板上。
5.如权利要求4所述的陶瓷基板组件制造方法,其特征在于,该玻璃釉的印刷厚度控制在5um-50um之间。
6.一种陶瓷基板组件,其特征在于,其包括陶瓷基板,以及在陶瓷基板上均匀涂敷的玻璃釉,陶瓷基板线路上需要焊接芯片或导线的焊盘露出于玻璃釉外。
7.如权利要求6所述的陶瓷基板组件,其特征在于,该玻璃釉为白色,该玻璃釉包括有二氧化硅和二氧化钛,是将二氧化钛均匀的混合到透明玻璃中,二氧化钛的重量浓度为20%-80%之间。
8.如权利要求6所述的陶瓷基板组件,其特征在于,该玻璃釉的印刷厚度在5um-50um之间。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910415054.7A CN110164774A (zh) | 2019-05-16 | 2019-05-16 | 陶瓷基板组件及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910415054.7A CN110164774A (zh) | 2019-05-16 | 2019-05-16 | 陶瓷基板组件及其制造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN110164774A true CN110164774A (zh) | 2019-08-23 |
Family
ID=67631222
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910415054.7A Pending CN110164774A (zh) | 2019-05-16 | 2019-05-16 | 陶瓷基板组件及其制造方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN110164774A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110513653A (zh) * | 2019-08-26 | 2019-11-29 | 嘉兴市光泰照明有限公司 | 一种扁平热管双面焊接led光源的汽车大灯结构及生产工艺 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106299084A (zh) * | 2016-08-30 | 2017-01-04 | 开发晶照明(厦门)有限公司 | Led倒装芯片封装基板和led封装结构 |
CN107978410A (zh) * | 2017-11-23 | 2018-05-01 | 深圳市昌龙盛机电技术有限公司 | 一种玻璃釉电位器的内部引出方法 |
CN210167323U (zh) * | 2019-05-16 | 2020-03-20 | 深圳市兆驰节能照明股份有限公司 | 陶瓷基板组件 |
-
2019
- 2019-05-16 CN CN201910415054.7A patent/CN110164774A/zh active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106299084A (zh) * | 2016-08-30 | 2017-01-04 | 开发晶照明(厦门)有限公司 | Led倒装芯片封装基板和led封装结构 |
CN107978410A (zh) * | 2017-11-23 | 2018-05-01 | 深圳市昌龙盛机电技术有限公司 | 一种玻璃釉电位器的内部引出方法 |
CN210167323U (zh) * | 2019-05-16 | 2020-03-20 | 深圳市兆驰节能照明股份有限公司 | 陶瓷基板组件 |
Non-Patent Citations (1)
Title |
---|
上海搪瓷七厂搪瓷场致发光屏试制组: "搪瓷场致发光屏制造与应用", 31 May 1974, pages: 10 - 13 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110513653A (zh) * | 2019-08-26 | 2019-11-29 | 嘉兴市光泰照明有限公司 | 一种扁平热管双面焊接led光源的汽车大灯结构及生产工艺 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5071555B2 (ja) | 発光装置 | |
JP5640632B2 (ja) | 発光装置 | |
JP5429038B2 (ja) | 発光素子搭載用基板および発光装置 | |
JP5206770B2 (ja) | 発光素子搭載用基板および発光装置 | |
JP5490876B2 (ja) | 光反射基板、発光素子搭載用基板、発光装置および発光素子搭載用基板の製造方法 | |
WO2010150830A1 (ja) | 発光装置 | |
CN101443922B (zh) | 发光装置的制造方法及发光装置 | |
US20110241049A1 (en) | Substrate for mounting light-emitting element and light-emitting device employing the substrate | |
US20130126702A1 (en) | Optical sensor device | |
CN103400833A (zh) | Led模组及其制造方法 | |
WO2012036219A1 (ja) | 発光素子用基板および発光装置 | |
CN109888081B (zh) | 一种全无机紫外led晶圆级封装方法 | |
JP2007227728A (ja) | Led部品およびその製造方法 | |
CN110164774A (zh) | 陶瓷基板组件及其制造方法 | |
KR20110000001A (ko) | 엘이디 어레이 기판 및 이의 제조방법 | |
KR101534760B1 (ko) | 구리 소자의 밀봉 접속을 위한 유리 시스템 및 전자 소자를 위한 하우징 | |
WO2012067203A1 (ja) | 発光素子用基板および発光装置 | |
CN210167323U (zh) | 陶瓷基板组件 | |
JP2013149637A (ja) | 発光装置および発光装置の製造方法 | |
JP5381800B2 (ja) | 発光素子搭載用基板およびこの基板を用いた発光装置 | |
US20120015462A1 (en) | Method of manufacturing led module | |
JP2018049991A (ja) | 発光素子搭載用基板及びその製造方法、並びに発光素子搭載パッケージ | |
CN203071126U (zh) | 无机基板 | |
JP2011258866A (ja) | 発光素子搭載用基板および発光装置 | |
JP2013183129A (ja) | 発光素子搭載用基板および発光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: No.199, Hujia Road, Changdong Industrial Park, Qingshanhu District, Nanchang City, Jiangxi Province 330000 (office building) (1st-3rd floor) Applicant after: Jiangxi zhaochi Guangyuan Technology Co.,Ltd. Address before: 518000 zhaochi Innovation Industrial Park, No.1, LiLang Road, xialilang community, Nanwan street, Longgang District, Shenzhen City, Guangdong Province Applicant before: SHENZHEN MTC OPTRONICS Co.,Ltd. |