CN110164774A - 陶瓷基板组件及其制造方法 - Google Patents

陶瓷基板组件及其制造方法 Download PDF

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CN110164774A
CN110164774A CN201910415054.7A CN201910415054A CN110164774A CN 110164774 A CN110164774 A CN 110164774A CN 201910415054 A CN201910415054 A CN 201910415054A CN 110164774 A CN110164774 A CN 110164774A
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ceramic substrate
glass
glass glaze
titanium dioxide
glaze
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霍文旭
李伟伟
周波
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Shenzhen Chi Chi Energy Saving Lighting Ltd By Share Ltd
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Shenzhen Chi Chi Energy Saving Lighting Ltd By Share Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4821Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4825Connection or disconnection of other leads to or from flat leads, e.g. wires, bumps, other flat leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157Partial encapsulation or coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838Geometry or layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Non-Metallic Protective Coatings For Printed Circuits (AREA)

Abstract

本申请陶瓷基板组件及其制造方法,该陶瓷基板组件包括陶瓷基板,以及在陶瓷基板上均匀涂敷的玻璃釉,陶瓷基板线路上需要焊接芯片或导线的焊盘露出于玻璃釉外。其制造方法包括:(1)制作依照线路设计做好电路的陶瓷基板;(2)在做好线路的陶瓷基板上均匀涂敷玻璃釉,需要焊接芯片或导线的焊盘露出,(3)在涂敷好玻璃釉的陶瓷基板上焊接芯片。在陶瓷基板上印刷白色玻璃釉后,线路层受到保护,产品可靠性提高。该白色玻璃釉的反射率(调节可达到93%‑98%)高于陶瓷基板(85%‑90%),COB亮度提升。玻璃和二氧化钛均为无机物,在高温环境下性能稳定,产品可靠性提升。

Description

陶瓷基板组件及其制造方法
【技术领域】
本申请涉及电子领域,尤其是涉及一种陶瓷基板组件及其制造方法。
【背景技术】
现有技术中,陶瓷基板上方银线路通过烧结的方式与陶瓷板结合,焊盘上方无保护层。该方案优点是工艺简单,成本低;缺点是芯片焊盘尺寸精度低,焊盘无保护容易被氧化,功能区反射率低亮度低。另外一些技术方案,陶瓷基板上方银线路通过烧结的方式与陶瓷板结合,焊盘上方有白色油墨作为保护层。该方案优点是芯片焊盘尺寸精度高,反射率高;缺点是白油属于有机物,高温下容易变色,长期使用白油易脱落,可靠性差。
因此,提供一种可靠性高的陶瓷基板实为必要。
【发明内容】
本申请的目的在于提供一种可靠性高的陶瓷基板组件及其制造方法。
为实现本申请目的,提供以下技术方案:
本申请提供一种陶瓷基板组件制造方法,其包括如下步骤:
(1)制作依照线路设计做好电路的陶瓷基板;
(2)在做好线路的陶瓷基板上均匀涂敷玻璃釉,需要焊接芯片或导线的焊盘露出,
(3)在涂敷好玻璃釉的陶瓷基板上焊接芯片。
一些实施方式中,基板上方涂敷玻璃釉是通过烧结方式与基板和线路层结合。
一些实施方式中,该玻璃釉为白色,该玻璃釉包括有二氧化硅和二氧化钛,是将二氧化钛均匀的混合到透明玻璃中,二氧化钛的重量浓度为20%-80%之间。
一些实施方式中,该玻璃釉通过丝网印刷的方式均匀涂敷到做好线路的陶瓷基板上。
一些实施方式中,该玻璃釉的印刷厚度控制在5um-50um之间。
本申请还提供一种陶瓷基板组件,其包括陶瓷基板,以及在陶瓷基板上均匀涂敷的玻璃釉,陶瓷基板线路上需要焊接芯片或导线的焊盘露出于玻璃釉外。
一些实施方式中,该玻璃釉为白色,该玻璃釉包括有二氧化硅和二氧化钛,是将二氧化钛均匀的混合到透明玻璃中,二氧化钛的重量浓度为20%-80%之间。
一些实施方式中,该玻璃釉的印刷厚度在5um-50um之间。
对比现有技术,本申请具有以下优点:
在陶瓷基板上印刷白色玻璃釉后,线路层受到保护,产品可靠性提高。该白色玻璃釉的反射率(调节可达到93%-98%)高于陶瓷基板(85%-90%),COB亮度提升。玻璃和二氧化钛均为无机物,在高温环境下性能稳定,产品可靠性提升。
【附图说明】
图1为本发明陶瓷基板组件的俯视图;
图2为本发明陶瓷基板组件的剖面示意图。
【具体实施方式】
请参阅图1和图2,本申请陶瓷基板组件包括陶瓷基板110,以及在陶瓷基板上均匀涂敷的玻璃釉150,陶瓷基板线路层120上需要焊接芯片130或导线的焊盘140露出于玻璃釉150外,也就是芯片两个焊盘之间不涂玻璃釉(外开窗)。芯片130通过锡膏141与焊盘140焊接。
具体的,该玻璃釉150为白色,该玻璃釉包括有二氧化硅和二氧化钛,是将二氧化钛均匀的混合到透明玻璃中,二氧化钛的重量浓度为20%-80%之间。一般来说,二氧化钛的浓度越高其反射率越高,但同时考虑到粘结力,采用浓度范围为20%-80%。该玻璃釉的印刷厚度在5um-50um之间,厚度越大基板反射率越高。
本申请提供一种陶瓷基板组件制造方法,其包括如下步骤:
(1)制作依照线路设计做好电路的陶瓷基板;
(2)在做好线路的陶瓷基板上均匀涂敷玻璃釉,需要焊接芯片或导线的焊盘露出,
(3)在涂敷好玻璃釉的陶瓷基板上焊接芯片。
陶瓷基板上方涂敷玻璃釉是通过烧结方式与基板和线路层结合。基板上方(除焊盘位置外)涂敷白色的玻璃釉150,通过烧结方式与陶瓷基板和线路层120结合。并且该玻璃釉通过丝网印刷的方式均匀涂敷到做好线路的陶瓷基板上。陶瓷基板上方银线路依然通过烧结方式制作。
该玻璃釉为白色,该玻璃釉包括有二氧化硅和二氧化钛,是将二氧化钛均匀的混合到透明玻璃中,二氧化钛的重量浓度为20%-80%之间。该玻璃釉的印刷厚度控制在5um-50um之间。
芯片通过回流焊或共晶的方式焊接在内部焊盘上,焊接后锡膏厚度控制在10um-50um,厚度太小空洞率高,厚度过高散热不良。
芯片焊接后的其他工艺可以采用与常规COB一致方式。
以上所述仅为本申请的较佳实施例,本申请的保护范围并不局限于此,任何基于本申请技术方案上的等效变换均属于本申请保护范围之内。

Claims (8)

1.一种陶瓷基板组件制造方法,其特征在于,其包括如下步骤:
(1)制作依照线路设计做好电路的陶瓷基板;
(2)在做好线路的陶瓷基板上均匀涂敷玻璃釉,需要焊接芯片或导线的焊盘露出,
(3)在涂敷好玻璃釉的陶瓷基板上焊接芯片。
2.如权利要求1所述的陶瓷基板组件制造方法,其特征在于,基板上方涂敷玻璃釉是通过烧结方式与基板和线路层结合。
3.如权利要求1所述的陶瓷基板组件制造方法,其特征在于,该玻璃釉为白色,该玻璃釉包括有二氧化硅和二氧化钛,是将二氧化钛均匀的混合到透明玻璃中,二氧化钛的重量浓度为20%-80%之间。
4.如权利要求1所述的陶瓷基板组件制造方法,其特征在于,该玻璃釉通过丝网印刷的方式均匀涂敷到做好线路的陶瓷基板上。
5.如权利要求4所述的陶瓷基板组件制造方法,其特征在于,该玻璃釉的印刷厚度控制在5um-50um之间。
6.一种陶瓷基板组件,其特征在于,其包括陶瓷基板,以及在陶瓷基板上均匀涂敷的玻璃釉,陶瓷基板线路上需要焊接芯片或导线的焊盘露出于玻璃釉外。
7.如权利要求6所述的陶瓷基板组件,其特征在于,该玻璃釉为白色,该玻璃釉包括有二氧化硅和二氧化钛,是将二氧化钛均匀的混合到透明玻璃中,二氧化钛的重量浓度为20%-80%之间。
8.如权利要求6所述的陶瓷基板组件,其特征在于,该玻璃釉的印刷厚度在5um-50um之间。
CN201910415054.7A 2019-05-16 2019-05-16 陶瓷基板组件及其制造方法 Pending CN110164774A (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110513653A (zh) * 2019-08-26 2019-11-29 嘉兴市光泰照明有限公司 一种扁平热管双面焊接led光源的汽车大灯结构及生产工艺

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CN106299084A (zh) * 2016-08-30 2017-01-04 开发晶照明(厦门)有限公司 Led倒装芯片封装基板和led封装结构
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CN110513653A (zh) * 2019-08-26 2019-11-29 嘉兴市光泰照明有限公司 一种扁平热管双面焊接led光源的汽车大灯结构及生产工艺

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