CN110137801A - Vertical cavity surface emitting laser and preparation method thereof - Google Patents
Vertical cavity surface emitting laser and preparation method thereof Download PDFInfo
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- CN110137801A CN110137801A CN201910252313.9A CN201910252313A CN110137801A CN 110137801 A CN110137801 A CN 110137801A CN 201910252313 A CN201910252313 A CN 201910252313A CN 110137801 A CN110137801 A CN 110137801A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18375—Structure of the reflectors, e.g. hybrid mirrors based on metal reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
Abstract
The invention discloses a kind of vertical cavity surface emitting lasers and preparation method thereof, belong to technical field of semiconductors.The vertical cavity surface emitting laser includes substrate, heat dissipating layer, lower reflecting layer, luminous zone, upper reflecting layer, upper metal electrode and lower metal electrode；The heat dissipating layer, the lower reflecting layer, the luminous zone, the upper reflecting layer and the upper metal electrode stack gradually on the first surface of the substrate, the lower metal electrode is arranged on the second surface of the substrate, and the second surface of the substrate is opposite with the first surface of the substrate；The lower reflecting layer includes the multilayer boron alkene film stacked gradually, and the material of the heat dissipating layer uses graphene or arsenic boron.Lower reflecting layer is changed to the multilayer boron alkene film stacked gradually by the present invention from dbr structure, can effectively enhance the reflecting effect of bottom, and the reflectivity in lower reflecting layer will be much higher than the reflectivity in upper reflecting layer, and the light extraction efficiency of VCSEL is greatly improved.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of vertical cavity surface emitting laser and preparation method thereof.
Background technique
Vertical cavity surface emitting laser (English: Vertical Cavity Surface Emitting Laser, referred to as:
It VCSEL) is a kind of semiconductor devices being made based on gallium arsenide semiconductor material, that laser is projected perpendicular to top surface.Have
Not in light emitting diode (English: Light Emitting Diode, abbreviation: LED), laser diode (English: Laser
It Diode, referred to as: LD) etc. needs just to can be carried out the light source of test after completing, VCSEL can be in any stage of production
It carries out attribute test and is handled in time the problem of discovery to test, it is possible to prevente effectively from the wave of manufacturing process and process time
Take.And it is big that VCSEL, which has small in size, round output facula, single longitudinal mode output, small, cheap, easy of integration threshold current,
The advantages that area array, can be widely applied to the fields such as optic communication, light network, optical storage.
Existing VCSEL includes substrate, lower distributed bragg reflector mirror (English: Distributed Bragg
Reflection, referred to as: DBR), luminous zone, upper DBR, upper metal electrode and lower metal electrode, lower DBR, luminous zone, upper DBR and
Upper metal electrode is sequentially laminated on the first surface of substrate, and lower metal electrode is arranged on the second surface of substrate, substrate
Second surface is opposite with the first surface of substrate.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
Since VCSEL is designed as being used as output towards the light beam on the top VCSEL, it is therefore desirable to which lower DBR has more than upper DBR
High reflectivity.But upper DBR and lower DBR are usually super brilliant using GaAs/AlAs superlattice structure or AlGaAs/AlGaAs
Lattice structure differs smaller between the reflectivity of upper DBR and the reflectivity of lower DBR, causes the light extraction efficiency of VCSEL lower.
Summary of the invention
The embodiment of the invention provides a kind of vertical cavity surface emitting lasers and preparation method thereof, are able to solve the prior art
Upper DBR and lower DBR refringence are few, the lower problem of the front VCSEL light extraction efficiency.The technical solution is as follows:
On the one hand, the embodiment of the invention provides a kind of vertical cavity surface emitting laser, the vertical cavity surface-emitting lasers
Device includes substrate, heat dissipating layer, lower reflecting layer, luminous zone, upper reflecting layer, upper metal electrode and lower metal electrode；The heat dissipating layer,
The lower reflecting layer, the luminous zone, the upper reflecting layer and the upper metal electrode are sequentially laminated on the first of the substrate
On surface, the lower metal electrode is arranged on the second surface of the substrate, the second surface of the substrate and the substrate
First surface it is opposite；The lower reflecting layer includes the multilayer boron alkene film stacked gradually, and the material of the heat dissipating layer uses stone
Black alkene or arsenic boron.
Optionally, every layer of boron alkene film with a thickness of 0.3nm~0.5nm, boron alkene film in the lower reflecting layer
Quantity is 80~150.
Optionally, the lower reflecting layer further includes nanometer Ag layer, and the nanometer Ag layer is located at the heat dissipating layer and described more
Between layer boron alkene film.
Preferably, the nanometer Ag layer with a thickness of 2nm~5nm.
Optionally, the heat dissipating layer is laminated construction or array of particles.
Further, described to dissipate when the heat dissipating layer is laminated construction, and the material of the heat dissipating layer uses graphene
Thermosphere with a thickness of 0.3nm~0.5nm；When the heat dissipating layer be laminated construction, and the material of the heat dissipating layer use arsenic boron
When, the heat dissipating layer with a thickness of 20nm~30nm.
Further, when the heat dissipating layer is array of particles, in the array of particles partial size of particle with it is two neighboring
The ratio between the distance between particle is 1:1~2:1.
On the other hand, the embodiment of the invention provides a kind of production method of vertical cavity surface emitting laser, the production
Method includes:
Heat dissipating layer, lower reflecting layer, luminous zone, upper reflecting layer, upper metal electrode are sequentially formed on the first surface of substrate；
Metal electrode under being formed on the second surface of substrate, the first table of the second surface of the substrate and the substrate
Face is opposite；
Wherein, the lower reflecting layer includes the multilayer boron alkene film stacked gradually, and the material of the heat dissipating layer uses graphite
Alkene or arsenic boron.
Optionally, the lower reflecting layer is formed in the following way:
Nanometer Ag layer is formed on the heat dissipating layer；
The B atom that control evaporation is formed in vacuum environment deposits on the nanometer Ag layer, forms boron alkene film.
Preferably, the pressure in the vacuum environment is 10-8Torr~10-6torr。
Technical solution provided in an embodiment of the present invention has the benefit that
Lower reflecting layer is changed to from dbr structure to the multilayer boron alkene film stacked gradually, boron alkene is a kind of monoatomic layer thickness
Two-dimentional boron material, therefore boron alkene material formed boron alkene film it is limited, can have interface between adjacent two layers boron alkene film,
Light injects multilayer boron alkene thin-film memory in multiple reflections.And the arrangement architecture of boron atom makes boron alkene film in boron alkene film
Surface show " fold ", the direction of reflection light can increase, in addition multiple reflections, so that the multilayer boron alkene stacked gradually is thin
Film has 99% or more reflectivity and almost 0 absorptance, and the wave-length coverage of effect is covered from infrared light to ultraviolet light
Entire wave band can effectively enhance the reflecting effect of bottom, and the reflectivity in lower reflecting layer will be much higher than the reflectivity in upper reflecting layer,
The light extraction efficiency of VCSEL is greatly improved.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram of vertical cavity surface emitting laser provided in an embodiment of the present invention；
Fig. 2 is the structural schematic diagram in lower reflecting layer provided in an embodiment of the present invention；
Fig. 3 is the top view of vertical cavity surface emitting laser provided in an embodiment of the present invention；
Fig. 4 is a kind of flow chart of the production method of vertical cavity surface emitting laser provided in an embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The embodiment of the invention provides a kind of vertical cavity surface emitting lasers.Fig. 1 is one kind provided in an embodiment of the present invention
The structural schematic diagram of vertical cavity surface emitting laser.Referring to Fig. 1, which includes substrate 10, heat dissipating layer
20, lower reflecting layer 21, luminous zone 30, upper reflecting layer 22, upper metal electrode 41 and lower metal electrode 42, heat dissipating layer 20, lower reflection
Layer 21, luminous zone 30, upper reflecting layer 22 and upper metal electrode 41 are sequentially laminated on the first surface of substrate 10, lower metal electrode
42 are arranged on the second surface of substrate 10, and the second surface of substrate 10 is opposite with the first surface of substrate 10.
Fig. 2 is the structural schematic diagram in lower reflecting layer provided in an embodiment of the present invention.Referring to fig. 2, in the present embodiment, lower anti-
Penetrating layer 21 includes the multilayer boron alkene film 211 stacked gradually, and the material of heat dissipating layer 20 uses graphene or arsenic boron.
Lower reflecting layer is changed to the multilayer boron alkene film stacked gradually by the embodiment of the present invention from dbr structure, and boron alkene is a kind of
The two-dimentional boron material of monoatomic layer thickness, therefore the boron alkene film that boron alkene material is formed is limited, between adjacent two layers boron alkene film
There can be interface, light injects multilayer boron alkene thin-film memory in multiple reflections.And in boron alkene film boron atom arrangement knot
Structure shows the surface of boron alkene film " fold ", and the direction of reflection light can increase, in addition multiple reflections, so that successively layer
Folded multilayer boron alkene film has 99% or more reflectivity and almost 0 absorptance, and the wave-length coverage of effect is covered from red
Outer light can effectively enhance the reflecting effect of bottom to the entire wave band of ultraviolet light, and the reflectivity in lower reflecting layer will be much higher than upper
The light extraction efficiency of the reflectivity in reflecting layer, VCSEL is greatly improved.In addition, multilayer boron alkene film stacks gradually to be formed down
Reflector thickness is integrally relatively thin, does not interfere with the epitaxial growth of VCSEL.
And luminous zone can also generate heat while emitting beam, and the heating conduction of boron alkene at normal temperature is limited, nothing
The heat of generation is effectively conducted away by method, is caused VCSEL to generate heat and then heat up, is influenced the performance of VCSEL, final to reduce
The front light extraction efficiency of VCSEL.Graphene is arranged between boron alkene film and substrate for the embodiment of the present invention or arsenic boron is formed
Heat dissipating layer, graphene and arsenic boron all have good heat dissipation performance, the heat for being collected at lower reflecting layer can be passed in time
Export is gone, and is avoided accumulation of heat influence that VCSEL temperature is caused to increase, is influenced luminous zone and emit beam, and guarantees that VCSEL's goes out light efficiency
Rate.In addition, the performance for graphene is similar with boron alkene film, arsenic boron has boron element identical with boron alkene film, and
Graphene is all semiconductor material as substrate with arsenic boron, and the heat dissipating layer that graphene or arsenic boron are formed is inserted in boron
Between alkene film and substrate, the epitaxial growth of VCSEL will not be influenced.
Optionally, the thickness of every layer of boron alkene film 211 can be 0.3nm~0.5nm, such as 0.4nm.Boron alkene film is very thin,
Original epitaxial growth will not be influenced being laminated multiple.
In practical applications, the thickness of every layer of boron alkene film might be less that 0.3nm or be greater than 0.5nm, at this time multilayer
The reflectivity that boron alkene film stacks gradually the lower reflecting layer to be formed still can be than GaAs/AlAs superlattice structure or AlGaAs/
The upper reflecting layer that AlGaAs superlattice structure is formed is high, and the light extraction efficiency of VCSEL is improved.
Further, the quantity of boron alkene film 211 can be 80~150, such as 120 in lower reflecting layer 21.Instantly
When the quantity of boron alkene film is 80~150 in reflecting layer, lower reflecting layer is with 99% or more reflectivity and almost 0
Absorptance can effectively improve with 99% or more reflectivity and almost 0 absorptance, and effectively improve VCSEL goes out light
Efficiency.
In practical applications, the quantity of boron alkene film 211 might be less that 80 or greater than 150 in lower reflecting layer 21
It is a, it still can use multiple reflections and every layer of boron alkene film surface presentation that light is injected in multilayer boron alkene film at this time
The increase of " fold " to radiation direction out improves the reflectivity in lower reflecting layer, improves the light extraction efficiency of VCSEL.
Optionally, as shown in Fig. 2, lower reflecting layer 21 can also include nanometer Ag layer 212, nanometer Ag layer 212 is located at substrate
Between 10 and multilayer boron alkene film 211, boron alkene film is formed on the substrate using nanometer Ag layer.
Further, the thickness of nanometer Ag layer can be 2nm~5nm, such as 3.5nm.When nanometer Ag layer with a thickness of 2nm~
When 5nm, it had both been able to achieve the deposition of boron alkene film, it can also be to avoid the waste of material.
In practical applications, the thickness of nanometer Ag layer can also be greater than 5nm, also be able to achieve the deposition of boron alkene film at this time.
In practical applications, the reflectivity in upper reflecting layer 22 is lower than the reflectivity in lower reflecting layer 21, so that light is from front
It projects.Illustratively, upper reflecting layer 22 may include the multiple periodic structures stacked gradually, and each periodic structure includes GaAs layers
Include the different AlGaAs layer of two constituent contents with AlAs layers or each periodic structure, is conducive to maintain whole lattice
Structure.Wherein, the different component of content can be at least one of Al and Ga in the different AlGaAs layer of two constituent contents.
Optionally, heat dissipating layer 20 can be laminated construction or array of particles.Heat dissipating layer is laminated construction, and it is convenient to realize,
And good heat dissipation effect.
Further, when heat dissipating layer 20 is laminated construction, and the material of heat dissipating layer 20 uses graphene, heat dissipating layer 20
Thickness can be 0.3nm~0.5nm, can conduct in time the heat that lower reflecting layer is gathered, will not influence VCSEL
Epitaxial growth.
In practical applications, the thickness of heat dissipating layer 20 can also be greater than 0.5nm, can also gather lower reflecting layer at this time
Heat conducts in time.
Further, when heat dissipating layer 20 is laminated construction, and the material of heat dissipating layer 20 uses arsenic boron, heat dissipating layer 20
Thickness can be 20nm~30nm, can conduct in time the heat that lower reflecting layer is gathered, will not cause the wave of material
Take.
In practical applications, the thickness of heat dissipating layer 20 can also be greater than 30nm, can also gather lower reflecting layer at this time
Heat conducts in time.
Further, when heat dissipating layer is array of particles, in array of particles between the partial size and two neighboring particle of particle
Ratio of distances constant can be 1:1~2:1, the heat that lower reflecting layer is gathered can be conducted in time.
In the present embodiment, substrate 10 can be GaAs.Luminous zone 30 may include the first N-type semiconductor stacked gradually
Layer, the first active layer and the first p type semiconductor layer；The material of first n type semiconductor layer can using n-type doping GaAs or
InP；The material of first p type semiconductor layer can be using the GaAs or InP of p-type doping；First active layer can be InGaAs
Quantum Well, InGaAsN Quantum Well, InGaAs quantum dot, one in InGaNAs quantum dot.Upper metal electrode 41 and lower metal
The material of electrode 42 can be using one of golden (Au), aluminium (Al), nickel (Ni), platinum (Pt), chromium (Cr), titanium (Ti) or a variety of.
Fig. 3 is the top view of vertical cavity surface emitting laser provided in an embodiment of the present invention.Referring to Fig. 3 and Fig. 1, in reality
In, upper metal electrode 41 be can be set on the entire fringe region of the upper surface in upper reflecting layer 22, while upper reflecting layer
Expose the central area of 22 upper surface.For example, as shown in figure 3, the upper surface in upper reflecting layer 22 is circle, upper metal electrode 41
For the ring structure being arranged along the top surface edge in upper reflecting layer 22.In addition, lower metal electrode 42 is laid on the entire of substrate 10
On second surface.
It is arranged on the entire fringe region of the upper surface in upper reflecting layer 22 due to upper metal electrode 41, upper metal electricity
Electric current can be uniformly injected into luminous zone 30 by pole 41, while the central area of the upper surface in upper reflecting layer 22 is exposed, so that
The light that luminous zone 30 occurs can be concentrated to be projected from the central area in upper reflecting layer 22, forms ideal point light source.
Optionally, which can also include PN junction 51 and target 52, and the setting of PN junction 51 exists
On the first surface of substrate 10, target 52 and lower reflecting layer 21 are arranged at intervals on laminated construction 51.PN junction and centre electricity
Pole, lower metal electrode 42 form photodiode, the Carriers Absorption when the light that luminous zone issues is mapped to PN junction, in PN junction
Photon is migrated, and the electric current in PN junction is caused to increase, and realizes the detection to luminous zone light-emitting line.In practical applications, may be used
With the testing result based on PN junction, shining for luminous zone is controlled, to reach preferable using effect.And integral device shares
Substrate and electrode, integrated level is high, and cost of implementation is low.
Specifically, PN junction 51 may include the second n type semiconductor layer, the second active layer and the second p-type half stacked gradually
Conductor layer；The material of second n type semiconductor layer can use the GaAs or InP of n-type doping；The material of second p type semiconductor layer
Material can be using the GaAs or InP of p-type doping；Second active layer can for InGaAs Quantum Well, InGaAsN Quantum Well,
One in InGaAs quantum dot, InGaNAs quantum dot.The material of target 52 can use gold (Au), aluminium (Al), nickel
(Ni), one of platinum (Pt), chromium (Cr), titanium (Ti) or a variety of.
In practical applications, as shown in figures 1 and 3, lower reflecting layer 21 can be set at the center of the upper surface of PN junction 51
On region, target 52 is arranged on the entire fringe region of the upper surface of PN junction 51, and the light that luminous zone 30 occurs can be with
It concentrates and is projected from the central area in upper reflecting layer 22, form ideal point light source.
The embodiment of the invention provides a kind of production methods of vertical cavity surface emitting laser, are suitable for shown in production Fig. 1
Vertical cavity surface emitting laser.Fig. 4 is a kind of production method of vertical cavity surface emitting laser provided in an embodiment of the present invention
Flow chart.Referring to fig. 4, which includes:
Step 201: sequentially formed on the first surface of substrate heat dissipating layer, lower reflecting layer, luminous zone, upper reflecting layer, on
Metal electrode.
In the present embodiment, lower reflecting layer includes the multilayer boron alkene film stacked gradually, and the material of heat dissipating layer uses graphite
Alkene or arsenic boron.
Optionally, lower reflecting layer can be formed in the following way:
Nanometer Ag layer is formed on heat dissipating layer；
The B atom that control evaporation is formed in vacuum environment deposits on nanometer Ag layer, forms boron alkene film.
By being initially formed nanometer Ag layer, the formation of boron alkene film may be implemented.
Further, nanometer Ag layer is formed on heat dissipating layer, may include:
Nanometer Ag solution is uniformly laid on substrate using photoresist spinner；
Nanometer Ag solution is heated, nanometer Ag layer is formed on the substrate.
It is formed uniformly nanometer Ag layer on substrate by whirl coating technology.
Illustratively, the B atom that control evaporation is formed in vacuum environment deposits on nanometer Ag layer, and it is thin to form boron alkene
Film may include:
It places the substrate into reaction chamber, and reaction chamber is vacuumized；
It is formed using chemical vapor deposition (English: Chemical Vapor Deposition, abbreviation: CVD) control evaporation
B atom deposited on nanometer Ag layer, formed boron alkene film.
The deposition of boron alkene film is realized using PVD technique, it is simple and convenient.
Further, reacting indoor temperature can be 500 DEG C~800 DEG C, such as 650 DEG C；Reacting indoor pressure can be with
It is 10-8Torr~10-6Torr, such as 10-7Torr can effectively control the content of impurity in boron alkene film, so that the boron alkene formed
Film quality is preferable.
Preferably, the thickness of nanometer Ag layer can be 2nm~5nm, be conducive to the deposition of boron alkene film.
Optionally, when the material of heat dissipating layer uses graphene, heat dissipating layer can be formed in the following way:
Graphene film is prepared on nickel metal substrate using chemical vapour deposition technique；
First layer polymethyl methacrylate materials are coated on graphene film；
Nickel metal substrate is dissolved using metal erosion liquid；
Mobile first layer polymethyl methacrylate materials, graphene film is transferred on substrate；
Second layer polymethyl methacrylate materials are coated on first layer polymethyl methacrylate materials, by graphene
Film fits closely on substrate；
First layer polymethyl methacrylate materials and second layer polymethyl methacrylate materials are heated, by the first strata
Methyl methacrylate material and second layer polymethyl methacrylate materials close adhesion；
First layer polymethyl methacrylate materials and second layer polymethyl methacrylate materials are immersed in acetone soln
Middle heating removal.
Optionally, when the material of heat dissipating layer uses arsenic boron, metallo-organic compound chemical gaseous phase deposition can be used
(English: Metal-organic Chemical Vapor Deposition, abbreviation: MOCVD) technique is formed.Luminous zone and upper
Reflecting layer can be formed using MOCVD technique.Upper metal electrode can be formed using vacuum evaporation process.Furthermore it is possible to pass through
Photoetching process realizes the graphical of upper metal electrode.
Step 202: metal electrode, the second surface of substrate and the first table of substrate under being formed on the second surface of substrate
Face is opposite.
Optionally, lower metal electrode can also be formed using vacuum evaporation process.
Optionally, which can also include:
Before step 201, PN junction is formed on the first surface of substrate.
After step 201, the groove for extending to PN junction is opened up on upper reflecting layer；In being formed on PN junction in groove
Between electrode.
Further, PN junction can be formed using MOCVD technique, and target can be formed using vacuum evaporation process.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of vertical cavity surface emitting laser, which is characterized in that the vertical cavity surface emitting laser includes substrate (10), dissipates
Thermosphere (20), lower reflecting layer (21), luminous zone (30), upper reflecting layer (22), upper metal electrode (41) and lower metal electrode (42)；
The heat dissipating layer (20), the lower reflecting layer (21), the luminous zone (30), the upper reflecting layer (22) and the upper metal electricity
Pole (41) is sequentially laminated on the first surface of the substrate (10), and the lower metal electrode (42) is arranged in the substrate (10)
Second surface on, the second surface of the substrate (10) is opposite with the first surface of the substrate (10)；The lower reflecting layer
It (21) include the multilayer boron alkene film (211) stacked gradually, the material of the heat dissipating layer (20) uses graphene or arsenic boron.
2. vertical cavity surface emitting laser according to claim 1, which is characterized in that every layer of boron alkene film (211)
With a thickness of 0.3nm~0.5nm, the quantity of boron alkene film (211) is 80~150 in the lower reflecting layer (21).
3. vertical cavity surface emitting laser according to claim 1 or 2, which is characterized in that the lower reflecting layer further includes
Nanometer Ag layer (212), the nanometer Ag layer (212) are located between the heat dissipating layer (20) and the multilayer boron alkene film (211).
4. vertical cavity surface emitting laser according to claim 3, which is characterized in that the thickness of the nanometer Ag layer (212)
Degree is 2nm~5nm.
5. vertical cavity surface emitting laser according to claim 1 or 2, which is characterized in that the heat dissipating layer (20) is folded
Layer structure or array of particles.
6. vertical cavity surface emitting laser according to claim 5, which is characterized in that when the heat dissipating layer (20) are lamination
Structure, and the material of the heat dissipating layer (20) use graphene when, the heat dissipating layer (20) with a thickness of 0.3nm~0.5nm；When
The heat dissipating layer (20) be laminated construction, and the material of the heat dissipating layer (20) use arsenic boron when, the heat dissipating layer (20)
With a thickness of 20nm~30nm.
7. vertical cavity surface emitting laser according to claim 5, which is characterized in that when the heat dissipating layer (20) are particle
When array, the ratio between the distance between partial size of particle and two neighboring particle are 1:1~2:1 in the array of particles.
8. a kind of production method of vertical cavity surface emitting laser, which is characterized in that the production method includes:
Heat dissipating layer, lower reflecting layer, luminous zone, upper reflecting layer, upper metal electrode are sequentially formed on the first surface of substrate；
Metal electrode under being formed on the second surface of substrate, the first surface phase of the second surface of the substrate and the substrate
It is right；
Wherein, the lower reflecting layer includes the multilayer boron alkene film stacked gradually, the material of the heat dissipating layer using graphene or
Person's arsenic boron.
9. production method according to claim 8, which is characterized in that the lower reflecting layer is formed in the following way:
Nanometer Ag layer is formed on the heat dissipating layer；
The B atom that control evaporation is formed in vacuum environment deposits on the nanometer Ag layer, forms boron alkene film.
10. manufacturing method according to claim 9, which is characterized in that the pressure in the vacuum environment is 10-8Torr~
10-6torr。
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| CN111064075A (en) * | 2019-12-26 | 2020-04-24 | 海南师范大学 | Deep ultraviolet vertical cavity semiconductor laser epitaxial structure and preparation method |
| CN111064073A (en) * | 2019-12-26 | 2020-04-24 | 常州纵慧芯光半导体科技有限公司 | Laser device and preparation method and application thereof |
| CN111162446A (en) * | 2019-12-27 | 2020-05-15 | 山东大学 | Electric pumping perovskite laser |
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| CN111064075B (en) * | 2019-12-26 | 2021-06-15 | 海南师范大学 | Deep ultraviolet vertical cavity semiconductor laser epitaxial structure and preparation method |
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