CN111048990A - Laser chip and preparation method thereof - Google Patents
Laser chip and preparation method thereof Download PDFInfo
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- CN111048990A CN111048990A CN201911363213.XA CN201911363213A CN111048990A CN 111048990 A CN111048990 A CN 111048990A CN 201911363213 A CN201911363213 A CN 201911363213A CN 111048990 A CN111048990 A CN 111048990A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
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Abstract
The invention discloses a laser chip and a preparation method thereof, and belongs to the technical field of semiconductors. The laser chip of the present invention includes: a first heat dissipation layer; a first electrode layer disposed on the first heat dissipation layer; the first semiconductor layer is arranged on one side, away from the first heat dissipation layer, of the first electrode layer; an active layer disposed on a side of the first semiconductor layer facing away from the first electrode layer; a second semiconductor layer formed on a side of the active layer facing away from the active layer; a second electrode layer disposed on a side of the second semiconductor layer facing away from the active layer. The invention solves the problem of poor heat dissipation performance of the conventional laser chip.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a laser chip and a preparation method thereof.
Background
The threshold current and the output power of the laser chip are sensitive to temperature, the threshold current exponentially increases with the increase of the temperature of the active layer 203, the electro-optic conversion efficiency exponentially decreases with the increase of the temperature of the active layer 203, the temperature of the active layer 203 increases, the average and the maximum output power of the laser are both reduced, the lasing wavelength generally has red shift and other phenomena with the increase of the temperature of the active layer 203, and along with mode hopping and non-uniformity of the internal temperature of the active layer 203, energy difference occurs between energy levels, so that the output spectral line is widened, and the multimode lasing condition is more likely to occur. Secondly, due to the influence of temperature, stress is generated inside due to the difference of thermal expansion coefficients of materials of all layers, diffusion among all layers is intensified, the device is degraded, and the service life of the laser is shortened.
Therefore, the heat dissipation of the laser chip is solved, the working temperature of the laser is reduced, and great help is provided for improving the working characteristics of the laser and prolonging the service life of the laser.
Disclosure of Invention
The invention aims to provide a laser chip and a preparation method thereof, and solves the problem that the existing laser chip is poor in heat dissipation performance.
In order to solve the technical problems, the invention is realized by the following technical scheme:
the invention provides a laser chip, which comprises:
a first heat dissipation layer;
a first electrode layer disposed on the first heat dissipation layer;
the first semiconductor layer is arranged on one side, away from the first heat dissipation layer, of the first electrode layer;
an active layer disposed on a side of the first semiconductor layer facing away from the first electrode layer;
a second semiconductor layer formed on a side of the active layer facing away from the active layer;
a second electrode layer disposed on a side of the second semiconductor layer facing away from the active layer.
In one embodiment of the present invention, the first heat spreading layer is a multi-layer graphene structure.
In an embodiment of the invention, the first semiconductor layer is an N-type distributed bragg reflector.
In one embodiment of the present invention, the second semiconductor layer is a P-type distributed bragg mirror.
In one embodiment of the invention, the laser chip further comprises a current contact layer, and the current contact layer is arranged on one side of the second semiconductor layer, which faces away from the active layer, and is connected with the second electrode layer.
In one embodiment of the invention, the laser chip further comprises an electron blocking layer disposed on one or both sides of the active layer.
The invention also provides a preparation method of the laser chip, which comprises the following steps:
providing a substrate;
forming a first semiconductor layer on the substrate;
forming an active layer on the first semiconductor layer on the side away from the substrate;
forming a second semiconductor layer on one side of the active layer, which is far away from the first semiconductor layer;
forming a second electrode layer on the second semiconductor layer on a side facing away from the active layer;
removing the substrate;
forming a first electrode layer on one side of the first semiconductor layer, which is far away from the active layer;
and forming a first heat dissipation layer on one side of the first electrode layer, which is far away from the first semiconductor layer, so as to obtain the laser chip.
In one embodiment of the present invention, the heat dissipation layer is a multi-layer graphene layer.
In one embodiment of the invention, the substrate is removed by mechanical grinding.
In one embodiment of the invention, the first heat sink layer is formed on the first electrode layer by a mechanical transfer method.
According to the laser chip, the area of the first electrode layer of the laser chip is covered with the multi-layer graphene material through a transfer method, the heat in the laser chip is rapidly transferred by utilizing the extremely high thermal conductivity coefficient characteristic of the graphene, the heat dissipation performance of the chip is greatly improved, and meanwhile, the graphene is used as a good electric conductor, so that the electric conductivity of the laser chip is further improved. In addition, the original substrate is removed in the process of manufacturing, so that the heat dissipation performance of the laser chip is further improved, and the size of the laser chip is reduced.
Of course, it is not necessary for any product in which the invention is practiced to achieve all of the above-described advantages at the same time.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic diagram of a laser structure according to the present invention;
FIG. 2 is a schematic diagram of a laser structure according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a laser structure according to another embodiment of the present invention;
FIG. 4 is a flow chart of a method of fabricating the laser structure of FIG. 1;
FIG. 5 is a schematic diagram of a laser chip structure in one embodiment of FIG. 1;
FIG. 6 is a flow chart of a method for fabricating the laser chip structure of FIG. 5;
FIG. 7 is a schematic structural diagram of a three-dimensional sensing device according to the present invention;
FIGS. 8-13 are process flow diagrams of laser chip structures in another embodiment of FIG. 1;
FIG. 14 is a flow chart of a method of fabricating the laser chip structure of FIG. 13;
FIGS. 15-19 are process flow diagrams of the first heat spreading layer of FIG. 13;
FIG. 20 is a schematic diagram of a portion of the laser structure of another embodiment of FIG. 1;
FIG. 21 is a schematic diagram of a portion of the laser structure of another embodiment of FIG. 1;
fig. 22 is a flow chart of a method of fabricating a portion of the laser structure of fig. 20-21.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1 to 3, the present invention provides a laser 40, which includes: a substrate 100, a laser chip 200, a package 300 and a first optical structure 400.
Referring to fig. 1 to 3, in the present embodiment, the substrate 100 is a circuit board for controlling the laser chip 200 to emit light. In other embodiments, the substrate 100 may also be a support plate for supporting only. The material of the substrate 100 is not limited, and for example, one of the ceramic substrate 100, the resin substrate 100, and the copper substrate 100 may be selected.
Referring to fig. 1 to 3, the laser chip 200 is disposed on the substrate 100, and the laser chip 200 may further include an electrode lead 500, and the electrode lead 500 is electrically connected to the substrate 100, so that the laser chip 200 is used for emitting light. In this embodiment, the Laser chip 200 may be, for example, a Vertical Cavity Surface Emitting Laser (VCSEL) chip 200, the Laser chip 200 may be configured to emit Laser light, the wavelength of the Laser light may be, for example, one of 650nm, 808nm, 850nm, 940nm, and the Laser light may have a uniform spot pattern. In this embodiment, the laser emitted by the laser chip 200 is, for example, a laser pulse, that is, a laser pulse is emitted intermittently, so as to prevent the user from being injured by emitting the laser to the outside continuously, and in addition, the intensity of the laser emitted by the laser chip 200 cannot exceed a predetermined safety threshold.
As shown in fig. 1 to 5 and 13, the laser chip 200 may include, from bottom to top, a first electrode layer 205, a substrate 201, a first semiconductor layer 202, an active layer 203, a second semiconductor layer 204 and a second electrode layer 206.
Referring to fig. 1 to 5 and 13, the first electrode layer 205 is, for example, an n-type doped electrode layer, and the material used can be, for example, Cr/Al/Ti/Au, Cr/Pt/Au, Ni/Ag/Pt/Au, Ti/Au or Ti/Pt/Au, which is not limited in the embodiments of the invention.
Referring to fig. 1 to 5 and 13, the substrate 201 is, for example, a gallium arsenide (GaAs) substrate 201, a silicon substrate 201 or a sapphire substrate 201.
Referring to fig. 1 to 5 and 13, the first semiconductor layer 202 is, for example, a set of N-type doped dbr, the set of N-type doped dbr includes at least two layers of N-type doped dbr, each layer of N-type doped dbr is made of the same material with different metal composition, for example, aluminum gallium arsenide (AlGaAs) in the embodiment.
Referring to fig. 1 to 5 and 13, the active layer 203 may include a multiple quantum well active layer 203 or a strained multiple quantum well active layer 203, and the embodiment of the invention is not limited thereto. In the embodiment of the present invention, the active layer 203 may be a multiple quantum well type active layer 203 made of gallium arsenide (GaAs)/aluminum gallium arsenide (AlGaAs), or may be an indium gallium arsenide (In) active layerxGa1-xAs)/AlGaAs (Al)yGa1-yAs), and the embodiment of the present invention is not limited.
Referring to fig. 1 to 5 and 13, the second semiconductor layer 204 is, for example, a group of P-type doped dbr, the group of P-type doped dbr includes at least two layers of P-type doped dbr, each layer of P-type doped dbr is made of the same material with different metal composition, for example, aluminum gallium arsenide (AlGaAs) in the embodiment.
Referring to fig. 1 to 5 and 13, the principle of the Distributed Bragg Reflector (DBR) is that a plurality of pairs of periodic structures are formed by two material layers with high refractive index and low refractive index, so that the reflectivity of the DBR reaches more than 99.5%, the number of layers of the P-type doped DBR in a group of P-type doped DBR and the number of layers of the N-type doped DBR in a group of N-type doped DBR are respectively determined by the difference between the refractive indexes of two similar materials with different metal component values with high refractive index and low refractive index, and the higher the difference between the refractive indexes of the two similar materials with different metal component values is, the fewer layers are required for the reflectivity of the DBR to reach more than 99.5%.
Referring to fig. 1 to 5 and 13, the second electrode layer 206 can be made of, for example, Cr/Al/Ti/Au, Cr/Pt/Au, Ni/Ag/Pt/Au, Ti/Au or Ti/Pt/Au.
Referring to fig. 1-5 and 13, in some embodiments, an electron blocking layer 207 may be formed on one or both sides of the upper surface of the active layer 203, and the electron blocking layer 207 may be, for example, a gallium aluminum nitride (AlGaN) material, which may be P-doped, and the dopant may be, for example, magnesium metallocene. Which on the one hand can act to confine the carriers and on the other hand can adjust the length of the resonant cavity formed by the first semiconductor layer 202 and the second semiconductor layer 204 to have a resonant wavelength exactly at the desired laser wavelength.
Referring to fig. 1 to 5 and 13, in some embodiments, a current contact layer 208 may be further disposed on the second semiconductor layer 204, and the material of the current contact layer 208 may include ITO, graphene, a zinc oxide film, a transparent metal or a nano silver wire, or a composite film thereof.
Referring to fig. 1 to 5 and 13, in some embodiments, the current contact layer 208, the second semiconductor layer 204 and the active layer 203 are etched down to the first semiconductor layer 202 at the periphery thereof, thereby forming a mesa. The laser chip 200 structure may also include a current confinement layer 216, current confinementThe process layer 216 covers the sidewalls and part of the upper surface of the mesa to cover the electron contact layer, the active layer 203, the electron blocking layer 207, and the second semiconductor layer 204, so as to passivate the sidewalls and reduce the leakage path of the device, wherein the current confinement layer 216 is an insulating medium, and the selected material may be, for example, SiO2、SiNx、HfO2Or Al2O3。
Referring to fig. 1 to 5 and 13, the light emitting principle of the laser chip 200 according to the embodiment of the invention is that after the second electrode layer 206 is connected to the positive electrode of the power supply and the first electrode layer 205 is connected to the negative electrode of the power supply, the presence of population inversion within the active layer 203, in the case where the gain provided by the lasing medium is sufficient to exceed the loss, when current is injected, the light intensity will continuously increase, when the electrons at the bottom of the conduction band of the high energy state transition to the valence band of the low energy state, the light with specific wavelength is reflected back and forth on the upper and lower semiconductor layers of the active layer 203, the amplification process is repeated continuously, so as to form laser, a laser light of a selected frequency and uniform direction is selected among the laser lights generated from the active layer 203 and preferentially amplified, the laser beams of other frequencies and directions are suppressed, and the selected laser beams are emitted through the first light-emitting port 214. The diameter of the first light outlet 214 may be, for example, a circular hole pattern of 6-30 μm, but the invention is not limited thereto, and the shape of the first light outlet 214 may be an ellipse, a rectangle, a polygon, or other patterns as required.
As shown in fig. 1 to 5 and 13, the package 300 is formed on the substrate 100 and covers the laser chip 200, and the material of the package 300 is a transparent material with a transmittance of more than 90%, such as liquid crystal polymer, silica gel, transparent acrylic, and the like. After the transparent materials are melted, the surface of the laser chip 200 is covered by injection molding, and after the molding and cooling, the package 300 encapsulates the laser chip 200 and the electrode leads 500 therein, and seals the laser chip 200, wherein the thickness of the package 300 in this embodiment may be, for example, 0.4-0.6 mm.
Referring to fig. 1 to 5 and 13, a first optical structure 400 is formed on a surface of the package body 300 within a thickness range of, for example, 0.05-0.2mm, wherein the first optical structure 400 is integrally formed in the package body 300. In this embodiment, the first optical structure 400 may be formed on the package body 300 by an etching method, where the etching method includes dry etching, wet etching, or an etching process combining dry etching and wet etching. In other embodiments, the first optical structure 400 may be obtained by nanoimprinting. The first optical structure 400 may be disposed on an optical path of the laser light in this embodiment, and the laser light emitted from the laser chip 200 enters the external environment after passing through the first optical structure 400. It is understood that in one embodiment, the laser light may be diffracted, scattered, etc. optically as it passes through the first optical structure 400, so as to change the pattern, propagation direction, etc. of the laser light. In another embodiment, when the laser light passes through the first optical structure 400, the laser light may pass through only the first optical structure 400 without changing the pattern and propagation direction of the laser light. Specifically, in the embodiment of the present application, it is exemplified that the first optical structure 400 is a light diffusion (diffuser) structure, the light diffusion (diffuser) structure is disposed on the optical path of the laser light, and the laser light emitted from the laser chip 200 is diffused by the light diffusion (diffuser) structure to be emitted more uniformly into the external space. The light diffusing structure may also expand the radiation range of the laser 40, and may detect and acquire depth of field information of a target object at a wider angle.
Referring to fig. 1 to 4, in fig. 4, the present invention further provides a method for manufacturing a laser 40, which at least includes the following steps:
s1, providing a substrate 100;
s2, arranging a laser chip 200 on the substrate 100, wherein the laser chip 200 is electrically connected with the substrate 100;
s3, forming a packaging body 300 on the substrate 100, and enabling the packaging body 300 to wrap the laser chip 200;
and S4, forming an optical structure on one side of the package body 300, which is far away from the substrate 100, and integrally forming the optical structure on the package body 300.
The method for manufacturing the laser 40 will be described in more detail below with reference to fig. 1 to 5 and 13.
Referring to fig. 1 to 5 and 13, in step S1, a substrate 100 is first provided, in this embodiment, the substrate 100 is a circuit board for controlling the laser chip 200 to emit light. In other embodiments, the substrate 100 may also be a support plate for supporting only. In the present embodiment, the material of the substrate 100 is not limited, and for example, one of the ceramic substrate 100, the resin substrate 100, and the copper substrate 100 may be selected.
Referring to fig. 1 to 5 and 13, in step S2, a laser chip 200 is disposed on the substrate 100, the laser chip 200 is connected to the substrate 100 via an electrode lead 500, and the laser chip 200 is used for emitting light. In this embodiment, the Laser chip 200 may be, for example, a Vertical Cavity Surface Emitting Laser (VCSEL) chip 200, the Laser chip 200 may be used to emit Laser light, the wavelength of the Laser light may be, for example, one of 650nm, 808nm, 850nm, 940nm, and the Laser light may have a uniform spot pattern. In this embodiment, the laser emitted by the laser chip 200 is, for example, a laser pulse, that is, a laser pulse is emitted intermittently, so as to prevent the user from being injured by emitting the laser to the outside continuously, and in addition, the intensity of the laser emitted by the laser chip 200 cannot exceed a predetermined safety threshold.
Referring to fig. 1 to 5 and 13, the laser chip 200 may include, from bottom to top, a first electrode layer 205, a substrate 201, a first semiconductor layer 202, an active layer 203, a second semiconductor layer 204 and a second electrode layer 206,
referring to fig. 1 to 6 and 13, in the present embodiment, a method for manufacturing a laser chip 200 includes:
s5, forming a first electrode layer 205 on the substrate 201;
s6, forming a first semiconductor layer 202 on one side, away from the first electrode layer 205, of the substrate 201;
s7, forming an active layer 203 on one side, which is far away from the substrate 201, of the first semiconductor layer 202;
s8, forming a second semiconductor layer 204 on the side, away from the first semiconductor layer 202, of the active layer 203;
s9. a second electrode layer 206 is formed on the second semiconductor layer 204.
Referring to fig. 1 to 6 and 13, the laser chip 200 may be formed by molecular beam epitaxy or metal organic vapor deposition. In this embodiment, a mesa structure may be formed on both sides of the second semiconductor layer 204 and the active layer 203, the mesa structure may be obtained by an etching method, and the second semiconductor layer 204 and the active layer 203 are etched until reaching the first semiconductor layer 202. In other embodiments, the laser chip 200 may further include a current confinement layer 216, wherein the current confinement layer 216 covers the sidewalls and a portion of the upper surface of the mesa to cover the electron contact layer, the active layer 203, the electron blocking layer 207, and the second semiconductor layer 204, so as to realize sidewall passivation and reduce a leakage path of the device, wherein the current confinement layer 216 is an insulating medium, and the selected material may be, for example, SiO2、SiNx、HfO2Or Al2O3And the film can also be formed by a molecular beam epitaxy method or a metal organic vapor deposition method. .
Referring to fig. 1 to 6 and 13, in step S3, a package 300 is formed on a substrate 100, and the laser chip 200 is encapsulated by the package 300, wherein the package 300 may be made of a transparent material with a transmittance of greater than 90%, such as liquid crystal polymer, silica gel, or transparent acrylic. After the transparent materials are melted, the surface of the laser chip 200 is covered by injection molding, and after the laser chip 200 and the electrode leads 500 are molded and cooled, the package 300 encapsulates the laser chip 200 and the electrode leads 500 therein, thereby sealing the laser chip 200. The thickness of the package 300 in this embodiment may be, for example, 0.4-0.6 mm.
Referring to fig. 1 to fig. 6 and fig. 13, in step S4, a first optical structure 400 is formed on a surface of the package body 300 within a thickness range of, for example, 0.05-0.2mm, wherein the first optical structure 400 is integrally formed on the package body 300, in this embodiment, the first optical structure 400 may be formed on the obtained package body 300 by an etching method, and the etching method may include an etching process combining a dry etching process, a wet etching process, or a dry and wet etching process. Specifically, for example, a laser etching method or a single-point diamond engraving method may be used to process and form a predetermined microstructure pattern, such as a microstructure pattern having a relief structure, specifically, the relief structure may be, but not limited to, a circular arc structure or a tooth structure, in this embodiment, the distance between adjacent relief structures is 0.04mm to 0.15mm, and the horizontal curvature radius and the vertical curvature radius of the relief structure may be 10 to 150um and 10 to 150um, respectively, according to design requirements. The desired first optical structure 400 is obtained by controlling the intensity of the laser energy and the beam size and diamond engraving angle to determine the pattern variation of the microstructure surface. In other embodiments, the first optical structure 400 can be obtained by nanoimprinting, for example, a mold is used to form a light-diffusible microstructure on the surface of the molded package 300, and the surface topography thereof can be classified into a random topography and a regular topography. The first optical structure 400 may be disposed on an optical path of the laser light in this embodiment, and the laser light emitted from the laser chip 200 enters the external environment after passing through the first optical structure 400. It is understood that in one embodiment, the laser light may be diffracted, scattered, etc. optically as it passes through the first optical structure 400, so as to change the pattern, propagation direction, etc. of the laser light. In another embodiment, when the laser light passes through the first optical structure 400, the laser light may pass through only the first optical structure 400 without changing the pattern and propagation direction of the laser light. Specifically, in the embodiment of the present application, it is exemplified that the first optical structure 400 is a light diffusion (diffuser) structure, the light diffusion (diffuser) structure is disposed on the optical path of the laser light, and the laser light emitted from the laser chip 200 is diffused by the light diffusion (diffuser) structure to be emitted more uniformly into the external space. The light diffusion (diffuser) structure can also expand the radiation range of the laser 40, and can detect and acquire depth of field information of a target object at a wider angle.
Referring to fig. 1 to 6 and 13, more specifically, the process of the method for manufacturing the laser 40 in the present embodiment includes: the prepared laser chip 200 is first fixed on the substrate 100, baked, and then the laser chip 200 and the substrate 100 are wire-bonded, and a specific method may be, for example, one of thermocompression bonding, ultrasonic bonding, or thermosonic bonding. And then, carrying out plasma cleaning, centrifugal washing and injection molding packaging on the laser chip 200 and the substrate 100, obtaining the packaging body 300 through the injection molding process, and baking to solidify the packaging body 300 after injection molding. A light diffusing (diffuser) structure is obtained on the surface of the cured package 300, for example, by means of nano-imprinting, so as to obtain the laser 40 of the present embodiment.
Referring to fig. 7, the present invention further provides a three-dimensional sensing device 1, which includes: the three-dimensional sensing device 1 may be, but is not limited to, a mobile phone, a tablet computer, a smart watch, and the like.
Referring to fig. 7, the three-dimensional sensing device 1 may include a housing 10 and a display device 20 disposed on the housing 10, in this embodiment, the display device 20 generally includes a display panel and a cover plate, and may also include a circuit for responding to a touch operation performed on the display panel. The display panel may be a liquid crystal display panel, and in some embodiments, the display panel may also be a touch display screen.
Referring to fig. 7, the three-dimensional sensing device 1 may further include a time-of-flight module 30, wherein the time-of-flight module 30 is disposed in the housing 10 and is used for emitting and receiving light that can pass through the display device 20, so as to obtain a distance of the target object according to a time difference or a phase difference between the emitted and received light. In the present embodiment, the time-of-flight module 30 may be, for example, a flying camera module, which obtains the distance between the target object and the three-dimensional sensing device 1 by emitting light and receiving light reflected by the target object, so as to obtain an image with depth information of the target object. Accordingly, the display device 20 may be provided with a light-transmitting region corresponding to the time-of-flight module 30, the light-transmitting region being for allowing the time-of-flight module 30 to emit or receive light.
Referring to fig. 7, the time-of-flight module 30 may include a laser 40, an image sensor 50, and a photographing control module 60, wherein when the laser 40 is activated, the photographing control module 60 controls the image sensor 50 to capture an optical image corresponding to a target object, and the optical image is an image formed by reflecting light emitted by the laser 40 to the image sensor 50 through a surface of the target object. Further, the image sensor 50 may be a CMOS (complementary metal Oxide Semiconductor) sensor, the photographing control module 60 includes an Analog Front End (AFE) and a pulse generator, the pulse generator sends corresponding timing to control the laser 40 and the image sensor 50, and the timing of the laser 40 and the image sensor 50 is synchronized, after the light emitted from the laser 40 is emitted, the light encounters target objects at different distances, the time for the light to be reflected to the image sensor 50 is different, and the photographing control module 60 of the time-of-flight module 30 can calculate the distance from the surface of the target object to the image sensor 50 by time or signal phase difference.
Referring to fig. 1 to 7 and 13 together, a laser 40 is used for emitting laser light to a target object, the laser 40 includes: a substrate 100, a laser chip 200, a package 300 and a first optical structure 400. The substrate 100 is a circuit board for controlling the laser chip 200 to emit light. In other embodiments, the substrate 100 may also be a support plate for supporting only. The material of the substrate 100 is not limited, and for example, one of the ceramic substrate 100, the resin substrate 100, and the copper substrate 100 may be selected. The laser chip 200 is disposed on the substrate 100, and an electrode lead 500 may be further disposed on the laser chip 200, through which the electrode lead 500 is electrically connected to the substrate 100, the laser chip 200 is used to emit light. The materials and the preparation method of the laser chip 200 are as described in the embodiments, and are not described herein. The package 300 is formed on the substrate 100 and covers the laser chip 200, and the first optical structure 400 is formed on a side of the package 300 away from the substrate 100, wherein the first optical structure 400 is integrally formed on the package 300.
Referring to fig. 1 to 7 and 13, the image sensor 50 measures the time from the laser chip 200 to the target object of each pixel point and then reflects the light back to the image sensor 50 according to the received laser light reflected by the target object. The optical filter 70 is disposed on the image sensor 50, and the optical filter 70 is used for collecting the reflected laser light and only allowing the laser light with the corresponding wavelength to pass through.
Referring to fig. 8 to 13 and 15, in another embodiment of the present invention, the laser chip 200 in the laser 40 may further include: a first heat dissipation layer 209, a first electrode layer 205, a first semiconductor layer 202, an active layer 203, a second semiconductor layer 204, and a second electrode layer 206. The first heat dissipation layer 209 is a multi-layer graphene 2092 structure, and the other layers of structures are obtained by using the materials corresponding to the above.
Referring to fig. 8 to 14, in fig. 14, the method for manufacturing the laser chip 200 of the present embodiment at least includes the following steps:
s10, forming a first semiconductor layer 202 on a substrate 201, wherein the substrate 201 is, for example, a gallium arsenide (GaAs) substrate 201, a silicon substrate 201 or a sapphire substrate 201;
s11, forming an active layer 203 on one side, away from the substrate 201, of the first semiconductor layer 202;
s12, forming a second semiconductor layer 204 on the side, away from the first semiconductor layer 202, of the active layer 203;
s13, forming a second electrode layer 206 on the second semiconductor layer 204;
s14, removing the substrate 201;
s15, forming a first electrode layer 205 on one side, away from the active layer 203, of the first semiconductor layer 202;
s16, forming the first heat dissipation layer 209 on the first electrode layer 205.
Referring to fig. 8 to 14, in detail, in steps S10 to S13, a first semiconductor layer 202, an active layer 203, a second semiconductor layer 204 and a second electrode layer 206 may be sequentially formed on a substrate 201 by a molecular beam epitaxy or metal organic vapor deposition method, so as to obtain the structure of a laser chip 200.
Referring to fig. 8 to 14, in step S14, a polymer layer with a predetermined thickness and high temperature resistance is coated on one side of the second electrode layer 206 of the epitaxial wafer structure to ensure that the chip is prevented from being broken due to over-thinning during the subsequent process of removing the substrate 201. And then removing the substrate 201 in the epitaxial wafer by, for example, mechanical grinding, wherein in this embodiment, the substrate 201 is, for example, a 90 μm gallium arsenide substrate 201.
Referring to fig. 8 to 14, in step S15, a first electrode layer 205 is obtained on the first semiconductor layer 202 away from the active layer 203, for example, by electroplating, for conducting electricity.
Referring to fig. 5 and 6, in step S16, a first heat dissipation layer 209 having a multi-layer graphene 2092 structure is formed on the first electrode layer 205 by a transfer method. The structure of the multi-layer graphene 2092 may be a multi-layer graphene 2092 grown on a temporary substrate 2091 (e.g., a copper substrate) by a Chemical Vapor Deposition (CVD) method, and the method of transferring the graphene 2092 is described in detail below.
Referring to fig. 15 to 19, in an embodiment, when transferring the multi-layer graphene structure, firstly, a glue coating process is performed on the multi-layer graphene 2092 on a temporary substrate 2091 (e.g., a copper substrate), and a glue layer 2093 with a thickness of, for example, 300 to 400nm, for example, a PMMA-a3 type glue is coated (e.g., spin-coated) on the surface of the multi-layer graphene 2092, so that the adhesive force of the glue layer 2093 prevents the post-processing process from damaging the multi-layer graphene 2092 structure. Specifically, the spin-coated glue cannot be too thin, so that the spin-coated glue cannot play a role in protection, and cannot be too thick, otherwise, the later-stage glue removal is difficult. In the process of gluing, the temporary base 2091 with the multi-layer graphene 2092 structure is flatly placed on a clean glass substrate, four sides of the temporary base 2091 are attached to the glass substrate by using, for example, a transparent adhesive tape, and then gluing is performed.
Referring to fig. 15-19, after the adhesive layer 2093 is applied, the temporary substrate 2091 (e.g., copper substrate) is removed from the glass substrate and baked on a high-heat plate at 180-300 ℃ for a period of time, e.g., 10-20 min. Then, the back surface of the baked temporary substrate 2091 (e.g., a copper or other metal substrate) is subjected to an oxygen plasma bombardment process to remove graphene that may be present on the back surface.
Referring also to fig. 15-19, the temporary substrate 2091 (e.g., copper or other metal substrate) is then removed by wet or dry etching. Specifically, the solution for etching the copper foil may be selected from one of ferric trichloride, sodium persulfate, and ammonium persulfate, for example. The sodium persulfate and the ammonium persulfate are used as etching liquid to etch the multilayer graphene 2092 more cleanly, the rinsing process of the multilayer graphene 2092 is convenient to carry out subsequently, but bubbles are generated on the back surface of the multilayer graphene 2092 in the reaction process, the bubbles are unfavorable for baking the multilayer graphene 2092 transferred to a silicon wafer subsequently, and the bubbles are broken in the baking process to cause the phenomenon that the multilayer graphene 2092 is broken. The ferric trichloride etching solution does not have the problem of bubbles, but the ferric trichloride is a yellow solution and is complex in the subsequent rinsing process. In one embodiment, for example, a sodium sulfate solution is used as the etching solution. More specifically, sodium persulfate crystals can be poured into deionized water to prepare a saturated solution of sodium persulfate, and in the solution preparation process, the solution is placed on a hot plate at 30-50 ℃ for example, so that the dissolution of the crystals can be accelerated. After the solution preparation is completed, a temporary substrate 2091 with a multilayer graphene 2092 structure attached thereto is taken out of an appropriate size, the temporary substrate 2091 is pressed flat, and then the temporary substrate 2091 is put into the solution. And (3) the etching time is 30-50 min, for example, the temporary substrate 2091 under the multilayer graphene 2092 structure can be completely etched.
Referring to fig. 15 to 19, the multi-layer graphene 2092 structure is rinsed, specifically, the multi-layer graphene 2092 structure is transferred to clean deionized water for rinsing, for example, 3 to 5 times, and the time of each rinsing is, for example, 10 min. After rinsing, air bubbles on the back surface of the multi-layer graphene 2092 structure are removed, and the multi-layer graphene 2092 structure is attached to the first electrode layer 205 in a physical attachment manner, such as pressure attachment or adhesion.
Referring to fig. 15 to 19, the drying process may be performed by, for example, baking on a hot plate at 25 to 50 ℃ for 10 to 30min, then baking at 25 to 60 ℃ for 5 to 10min, and finally baking at 180 to 250 ℃ for 10 to 30 min. After baking is finished, the structure of the multilayer graphene 2092 is cooled, and then the adhesive layer 2093 on the multilayer graphene 2092 is removed by using acetone, for example.
As shown in fig. 15 to 19, the multilayer graphene 2092 first heat dissipation layer 209 is obtained on the epitaxial layer structure by the above method, and since the thermal conductivity of the graphene is 5300W/mxk, which is much larger than that of the original substrate 201, by this transfer method, the bottom of the epitaxial layer structure is covered with the multilayer graphene 2092 material, and the heat dissipation performance of the chip is greatly improved by utilizing the characteristic that the graphene has a very high thermal conductivity to quickly transfer away the heat in the chip. Meanwhile, the original substrate 201 is removed, so that the heat dissipation performance of the chip is further improved, and the size of the laser chip 200 is reduced. In addition, the graphene serves as a good electrical conductor, so that the electrical conductivity of the laser chip 200 is further improved.
Referring to fig. 20 and 21, the present invention further provides a laser 40, which includes: laser chip 200, substrate 100.
Referring to fig. 20 and 21, a laser chip 200 structure may include: a substrate 201, at least one light emitting unit 211, a non-light emitting region 212, a first electrode layer 205, and a second electrode layer 206.
Referring to fig. 20 and 21, the substrate 201 may be, for example, a gallium arsenide (GaAs) substrate 201, a silicon substrate 201, or a sapphire substrate 201, and in the present embodiment, the gallium arsenide (GaAs) substrate 201 is taken as an example.
Referring to fig. 20 and 21, a light emitting unit 211 is disposed on the substrate 201, and the light emitting unit 211 may include: a first semiconductor layer 202, an active layer 203, and a second semiconductor layer 204. A first semiconductor layer 202 is disposed on the substrate 201, the first semiconductor layer 202 may be, for example, a set of n-doped DBR mirrors, oneThe n-type doped dbr includes at least two layers of n-type doped dbr, and each layer of n-type doped dbr is made of the same material with different metal composition values, for example, aluminum gallium arsenide (AlGaAs) is selected as the material in this embodiment. The active layer 203 is disposed on the first semiconductor layer 202 on a side away from the substrate 201, and the active layer 203 may include a multiple quantum well type active layer 203 or a strained multiple quantum well type active layer 203, which is not limited in the embodiment of the present invention. In the embodiment of the present invention, the active layer 203 may be a multiple quantum well type active layer 203 made of gallium arsenide (GaAs)/aluminum gallium arsenide (AlGaAs), or may be an indium gallium arsenide (In) active layerxGa1-xAs)/AlGaAs (Al)yGa1-yAs), and the embodiment of the present invention is not limited. The second semiconductor layer 204 is disposed on a side of the active layer 203 away from the first semiconductor layer 202, the second semiconductor layer 204 is, for example, a group of P-type doped distributed bragg reflectors, the group of P-type doped distributed bragg reflectors includes at least two layers of P-type doped distributed bragg reflectors, and each layer of n-type doped distributed bragg reflector is made of the same material with different metal components, for example, aluminum gallium arsenide (AlGaAs) is selected as the material in this embodiment. In this embodiment, laser light emitted from the active layer 203 passes through the second light outlet 215 and is emitted through the first semiconductor layer 202 in a direction facing the substrate 201 to form the back reflection laser chip 200, wherein the direction of emitting laser light can be achieved by adjusting the number of mirrors in the first semiconductor layer 202 and the second semiconductor layer 204 to enhance the optical feedback of the front surface, in other embodiments, an electron blocking layer 207 can be further formed on one side or both sides of the upper surface of the active layer 203, the electron blocking layer 207 can be, for example, a gallium aluminum nitride (AlGaN) material, and can be P-type doped, and the dopant can be, for example, magnesium metallocene. Which on the one hand can act to confine the carriers and on the other hand can adjust the length of the resonant cavity formed by the first semiconductor layer 202 and the second semiconductor layer 204 to have a resonant wavelength exactly at the desired laser wavelength. The diameter of the second light outlet 215 may be, for example, a circular hole pattern of 6-30 μm, but the invention is not limited thereto, and the second light outletThe shape of the port 215 may be selected from an ellipse, a rectangle, a polygon, and the like as required.
Referring to fig. 20 and 21, non-light-emitting regions 212 are disposed on two sides of a light-emitting region formed by the light-emitting unit 211. A first electrode layer 205 is provided on a side of the non-light emitting region 212 facing away from the substrate 201, and a second electrode layer 206 is provided on a side of the light emitting unit 211 facing away from the substrate 201. In some embodiments, the first electrode layer 205 and the second electrode layer 206 are at the same level at the side facing away from the substrate 201.
Referring to fig. 20 and 21, a third electrode layer 110 and a fourth electrode layer 120 are disposed on the substrate 100, the third electrode layer 110 and the fourth electrode layer 120 are disposed opposite to the first electrode layer 205 and the second electrode layer 206, respectively, and the fourth electrode layer 120 and the second electrode layer 206 are mounted point to point by mounting the third electrode layer 110 and the first electrode layer 205 point to point, so as to omit a wire bonding operation in the prior art and achieve a direct fixed connection between the laser chip 200 and the substrate 100. The substrate 100 is a circuit board for controlling the laser chip 200 to emit light.
Referring to fig. 20 and 21, after the laser chip 200 is electrically connected to the substrate 100, the positive and negative electrodes of the laser chip 200 are simultaneously turned on, the population inversion exists in the active layer 203 of the light emitting unit 211, when the gain provided by the laser medium is enough to exceed the loss, when a current is injected, the light intensity will continuously increase, and when an electron at the bottom of the conduction band of the high energy state transits to the valence band of the low energy state, the amplification process is repeated as the light with a specific wavelength is reflected back and forth between the upper and lower two semiconductor layers of the active layer 203, so as to form laser, the laser generated by the active layer 203 selects a laser with a certain frequency and direction and preferentially amplifies the selected laser, the laser with other frequencies and directions is suppressed, and the selected laser passes through the second light outlet 215 and then passes through the first semiconductor layer 202 to be emitted toward the direction of the substrate 201, the structure of the laser chip 200 of back emission is formed, in the structure of the laser chip 200 of the embodiment, the structure is different from the structure of the laser chip 200 of top emission, the anode and the cathode of the laser chip 200 are positioned on the same side, and the input of current is realized between the laser chip 200 and the substrate 100 in a point-to-point mounting mode, the routing process is avoided, and the adverse effect caused by lead inductance is also avoided, the lead inductance is an important factor for restricting the whole time response, the lead inductance is generated to be not beneficial to the use of higher frequency and shorter pulse, and meanwhile, the assembly efficiency and the electric connection stability of the laser chip 200 and the substrate 100 are improved.
Referring to fig. 20 and 21, in some embodiments, a second optical structure 213 may be further disposed on a side of the substrate 201 away from the light-emitting unit 211 and the non-light-emitting region 212, the second optical structure 213 may be disposed on a light path of the laser in this embodiment, and the laser emitted by the laser chip 200 passes through the second light outlet 215 and then enters the external environment after passing through the second optical structure 213. It will be appreciated that in some embodiments, the laser light may be diffracted, scattered, etc. optically as it passes through the second optical structure 213, so as to change the pattern, propagation direction, etc. of the laser light. In other embodiments, when the laser light passes through the second optical structure 213, the laser light may only pass through the second optical structure 213 without changing the pattern and the propagation direction of the laser light. The second optical structure 213 may be a microlens structure, or may be another optical structure capable of implementing the above functions, specifically, the embodiment of the present application describes, by taking the second optical structure 213 as an example, a light diffusion (diffuser) structure, the light diffusion (diffuser) structure is disposed on an optical path of laser light, the laser light emitted by the laser chip 200 is diffused by the light diffusion (diffuser) structure, and can be emitted more uniformly into an external space, meanwhile, the light diffusion (diffuser) structure can also expand the radiation range of the laser 40, and can detect depth information of a target object with a wider angle. In other embodiments, the second optical structure 213 may also be a sawtooth oblique pattern, so that the laser beam can be emitted out at a predetermined oblique angle after passing through the second optical structure 213 by changing the propagation direction of the optical path. By directly forming the second optical structure 213 on the substrate 201, a process procedure of assembling different light homogenizing pieces according to different field angles is avoided, the size of the obtained laser 40 is consistent with the thickness of the laser chip 200, the size of the laser 40 module at present can be reduced extremely, and integration and miniaturization are facilitated.
Referring to fig. 20 and 21, in other embodiments, when the substrate 100 is manufactured, a second heat dissipation layer 210 may be disposed between the substrate 100 and the third electrode layer 110, and between the substrate 100 and the fourth electrode layer 120, for example, the second heat dissipation layer 210 may be a multi-layer graphene layer structure, and the characteristic of graphene with a very high thermal conductivity is utilized to quickly transfer heat in the laser chip 200, so as to greatly improve the heat dissipation performance of the laser chip 200.
Referring to fig. 1, 20 and 21, in another embodiment, the laser 40 may further form an integrally formed package 300 and a first optical structure 400 outside the laser chip 200 and the substrate 100 to package the laser chip 200. The package 300 is formed on the substrate 100 and covers the laser chip 200, and the package 300 may be made of a transparent material such as liquid crystal polymer, silica gel, or transparent acrylic. After the transparent materials are melted, the surface of the laser chip 200 is covered by injection molding, and after the laser chip is molded and cooled, the laser chip 200 is packaged in the package body 300, so that the laser chip 200 is sealed. The first optical structure 400 is formed on the package body 300, wherein the first optical structure 400 is integrally formed on the package body 300, in this embodiment, the first optical structure 400 may be formed on the package body 300 by an etching method, and the etching method includes an etching process of dry etching, wet etching, or a combination of dry etching and wet etching. In other embodiments, the first optical structure 400 may be obtained by nanoimprinting. When the laser light passes through the first optical structure 400, the laser light may generate optical phenomena such as diffraction and scattering, so as to change the pattern, the propagation direction, etc. of the laser light or make the emitted light more uniform.
Referring to fig. 20, 21 and 22, the method for manufacturing the laser 40 in this embodiment at least includes the following steps:
s17, preparing a laser chip 200;
s18, preparing a substrate 100;
and S19, point-to-point mounting of the laser chip 200 and the substrate 100 to obtain the laser 40.
Referring to fig. 20, 21 and 22, in step S17, the laser chip 200 is prepared, and the steps of preparing the laser chip 200 are as follows:
as shown in fig. 20, 21 and 22, a substrate 201 is provided, a first semiconductor layer 202 is formed on the substrate 201, an active layer 203 is formed on the first semiconductor layer 202, a second semiconductor layer 204 is formed on the active layer 203, at least one light emitting unit 211 and non-light emitting regions 212 disposed at two sides of the light emitting region formed by the light emitting unit 211 are formed, a first electrode layer 205 is formed at a side of the non-light emitting region 212 departing from the substrate 201, and a second electrode layer 206 is formed at a side of the light emitting unit 211 departing from the substrate 201. The materials selected for the substrate 201, the first semiconductor layer 202, the active layer 203, and the second semiconductor layer 204 have been described in detail in the foregoing embodiments, and are not repeated here, and the manufacturing method for sequentially forming the first semiconductor layer 202, the active layer 203, the second semiconductor layer 204, the first electrode layer 205, and the second electrode layer 206 on the substrate 201 may be, for example, a molecular beam epitaxy method or a metal organic vapor deposition method.
Referring to fig. 20, 21 and 22, in step S18, a substrate 100 with a circuit board is provided, the substrate 100 includes a third electrode layer 110 and a fourth electrode layer 120 aligned with the first electrode layer 205 and the second electrode layer 206, and the third electrode layer 110 and the fourth electrode layer 120 are electrically connected to the substrate 100 respectively. The third electrode layer 110 is formed on the substrate 100 at a position corresponding to the first electrode layer 205, the third electrode layer 110 is electrically connected to the substrate 100, the fourth electrode layer 120 is formed on the substrate 100 at a position corresponding to the second electrode layer 206, and the fourth electrode layer 120 is electrically connected to the substrate 100. A method of forming the third electrode layer 110 and the fourth electrode layer 120 on the substrate 100 may be, for example, an evaporation method, an electroplating method, a molecular beam epitaxy method, or a metal organic vapor deposition method.
Referring to fig. 20, 21 and 22, in step S19, the third electrode layer 110 and the first electrode layer 205, and the fourth electrode layer 120 and the second electrode layer 206 are respectively mounted point to obtain the laser 40.
As shown in fig. 20, fig. 21 and fig. 22, in another embodiment, in step S18, when the substrate 100 is manufactured, a second heat dissipation layer 210 may be formed between the substrate 100 and the third electrode layer 110, and between the substrate 100 and the fourth electrode layer 120, and the second heat dissipation layer 210 may be, for example, a multi-layer graphene layer structure, and utilizes the characteristic that graphene has a very high thermal conductivity to quickly transfer heat away from the laser chip 200, thereby greatly improving the heat dissipation performance of the laser chip 200. The method for forming the second heat dissipation layer 210 may use a transfer method, for example, and the specific process is described in the foregoing embodiments and is not described herein again.
Referring to fig. 20, 21 and 22, in another embodiment, in step S19, a second optical structure 213 may be further formed on a side of the substrate 201 away from the light-emitting unit 211 and the non-light-emitting area 212, for example, a transparent material layer with a predetermined thickness may be coated on the substrate 201, the transparent material layer may be a transparent material with a transmittance greater than 90%, such as liquid crystal polymer, silica gel, transparent acrylic, and the like, and the thickness of the transparent material layer is, for example, 0.05-0.2 mm. The polymer coating is then nanoimprinted with a template having a predetermined pattern to obtain a second optical structure 213 having a predetermined pattern. The second optical structure 213 may be a microlens or a light diffusion (diffuser) structure, etc., as long as it can achieve the desired change in the optical path.
As shown in fig. 1, in another embodiment, in step S19, the package 300 and the first optical structure 400 may be formed outside the laser chip 200 and the substrate 100 and integrally formed, so as to package the laser chip 200. The package 300 is formed on the substrate 100 and covers the laser chip 200, and the package 300 may be made of a transparent material such as liquid crystal polymer, silica gel, or transparent acrylic. After the transparent materials are melted, the surface of the laser chip 200 is covered by injection molding, and after the laser chip is molded and cooled, the laser chip 200 is packaged in the package body 300, so that the laser chip 200 is sealed.
The above disclosure of selected embodiments of the invention is intended to be illustrative only. The preferred embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments disclosed. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention. The invention is limited only by the claims and their full scope and equivalents.
Claims (10)
1. A laser chip, comprising:
a first heat dissipation layer;
a first electrode layer disposed on the first heat dissipation layer;
the first semiconductor layer is arranged on one side, away from the first heat dissipation layer, of the first electrode layer;
an active layer disposed on a side of the first semiconductor layer facing away from the first electrode layer;
a second semiconductor layer formed on a side of the active layer facing away from the active layer;
a second electrode layer disposed on a side of the second semiconductor layer facing away from the active layer.
2. The laser chip of claim 1, wherein the first heat spreading layer is a multi-layer graphene structure.
3. The laser chip as recited in claim 1, wherein the first semiconductor layer is an N-type distributed bragg reflector.
4. The laser chip as recited in claim 1, wherein the second semiconductor layer is a P-type distributed bragg reflector.
5. A laser chip as claimed in claim 1, further comprising a current contact layer disposed on a side of the second semiconductor layer facing away from the active layer and connected to the second electrode layer.
6. The laser chip of claim 1, further comprising an electron blocking layer disposed on one or both sides of the active layer.
7. A method for preparing a laser chip is characterized by comprising the following steps:
providing a substrate;
forming a first semiconductor layer on the substrate;
forming an active layer on the first semiconductor layer on the side away from the substrate;
forming a second semiconductor layer on one side of the active layer, which is far away from the first semiconductor layer;
forming a second electrode layer on the second semiconductor layer on a side facing away from the active layer;
removing the substrate;
forming a first electrode layer on one side of the first semiconductor layer, which is far away from the active layer;
and forming a first heat dissipation layer on one side of the first electrode layer, which is far away from the first semiconductor layer, so as to obtain the laser chip.
8. The method of claim 7, wherein the first heat sink layer is a multi-layer graphene layer.
9. The method of claim 7, wherein the substrate is removed by mechanical grinding.
10. The method of claim 7, wherein the first heat sink layer is formed on the first electrode layer by a transfer method.
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