JPH03283480A - Surface-emitting type semiconductor laser device - Google Patents
Surface-emitting type semiconductor laser deviceInfo
- Publication number
- JPH03283480A JPH03283480A JP8364690A JP8364690A JPH03283480A JP H03283480 A JPH03283480 A JP H03283480A JP 8364690 A JP8364690 A JP 8364690A JP 8364690 A JP8364690 A JP 8364690A JP H03283480 A JPH03283480 A JP H03283480A
- Authority
- JP
- Japan
- Prior art keywords
- active region
- heat
- layer
- semiconductor laser
- laser device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 14
- 238000009792 diffusion process Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 abstract description 4
- 238000005253 cladding Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は活性領域で発生した熱をＧａＡｓ基板を介して
ヒートシンクに抜熱する構造の面発光型半導体レーザ装
置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a surface-emitting semiconductor laser device having a structure in which heat generated in an active region is transferred to a heat sink via a GaAs substrate.
第３図は従来の面発光型半導体レーザ装置の断面構造図
であり、ＧａＡｓ製の基板２１の表面にエピタキシャル
成長法によりバッファ膚２２、半導体多層膜製の反射鏡
２３、クラッド層２４を順次的に積層形成した後、クラ
ッド層２４表面の中央に同じくエピタキシャル成長法に
より活性Ｎ２５、キャンプ層２６、クラッド層２７をこ
の順序で積層形成し、またこれらの周囲には第１．第２
ブロツク層２８．２９を形成し、第２ブロック層２９及
びキャップ層２７上に電流拡散層３０を形成し、この電
流拡散層３０の中央部にコンタクト層３１を隔てて前記
活性領域２５と対向する位置に反射鏡３２を、またその
周囲に絶縁層３２３３を形成して構成しである。３４．
３５は基板２１の上下面側に設けた電極である。FIG. 3 is a cross-sectional structural diagram of a conventional surface-emitting semiconductor laser device, in which a buffer layer 22, a semiconductor multilayer reflector 23, and a cladding layer 24 are sequentially formed on the surface of a GaAs substrate 21 by epitaxial growth. After forming the layers, active N25, camp layer 26, and cladding layer 27 are formed in this order at the center of the surface of the cladding layer 24 by the same epitaxial growth method, and a first layer 27 is formed around these layers. Second
Block layers 28 and 29 are formed, and a current diffusion layer 30 is formed on the second block layer 29 and the cap layer 27, and the current diffusion layer 30 faces the active region 25 with a contact layer 31 in the center thereof. It is constructed by forming a reflecting mirror 32 at the position and an insulating layer 3233 around the reflecting mirror 32. 34.
Reference numeral 35 denotes electrodes provided on the upper and lower surfaces of the substrate 21.
而してこのような面発光型半導体レーザ装置にあっては
画電極３４．３５に電圧を印加し、活性領域２５から光
を出射させ、両側の反射鏡２３．３２で光を反射させて
共振させた後、矢符方向にレーザビームを出射せしめる
ようになっている。活性領域２５からの熱はＧａＡｓ製
の基板２１を経て図示しないＳｔ。In such a surface emitting type semiconductor laser device, a voltage is applied to the picture electrodes 34 and 35, light is emitted from the active region 25, and the light is reflected by the reflecting mirrors 23 and 32 on both sides to create resonance. After that, the laser beam is emitted in the direction of the arrow. The heat from the active region 25 passes through the GaAs substrate 21 to St (not shown).
Ｃｕ等からなるヒートシンクから抜熱されるようになっ
ている。Heat is removed from a heat sink made of Cu or the like.
ところで上述した如き構造ではヒートシンクと発熱源で
ある活性領域２５との間に熱伝導率が０．４７Ｗ／ｃｍ
／ｄｅｇと比較的小さいＧａＡｓ製のバッファ層２２及
び基板２１が約８０μｍの厚さで存在する。このため直
径５〜１０μｍ程度の小さい活性領域２５からの熱放散
は十分でなく、閾値電圧が２０ＫＡ ／ ｃｕｔ以上の
面発光型半導体装置においては活性領域２５の温度上昇
が太き（なり、室温下での連続発振が難しくなるという
問題があった。By the way, in the structure described above, the thermal conductivity between the heat sink and the active region 25 which is the heat source is 0.47 W/cm.
A buffer layer 22 made of GaAs and a substrate 21 having a relatively small thickness of /deg are present with a thickness of about 80 μm. For this reason, heat dissipation from the small active region 25 with a diameter of about 5 to 10 μm is not sufficient, and in a surface-emitting type semiconductor device with a threshold voltage of 20 KA/cut or more, the temperature rise in the active region 25 becomes large (below room temperature). The problem was that continuous oscillation became difficult.
本発明はかかる事情に鑑みなされたものであって、その
目的とするところは熱伝導率の高い材料を基板と活性領
域との間に介装させ、放熱効果を大幅に高め得たＧａＡ
ｓ系の面発光型半導体のレーザ装置を提供するにある。The present invention has been made in view of the above circumstances, and its purpose is to interpose a material with high thermal conductivity between the substrate and the active region, thereby improving the heat dissipation effect significantly.
An object of the present invention is to provide an s-based surface-emitting semiconductor laser device.
本発明に係る面発光型半導体のレーザ装置は、ＧａＡｓ
基板表面に半導体多層膜製の反射鏡、活性領域及び他の
反射鏡を順次的に積層して構成した面発光型レーザ装置
において、前記半導体多層膜製の反射鏡とＧａＡｓ基板
との間に熱拡散層を介装したことを特徴とする。The surface-emitting semiconductor laser device according to the present invention is made of GaAs.
In a surface-emitting laser device configured by sequentially stacking a semiconductor multilayer film reflector, an active region, and other reflectors on the substrate surface, heat is generated between the semiconductor multilayer film reflector and the GaAs substrate. It is characterized by having a diffusion layer interposed therein.
活性領域とＧａＡｓ基板との間に介装した熱拡散層が活
性領域からの熱を拡散し、更にＧａＡｓ基板にて拡散さ
れてヒートシンクに抜熱されることとなる。A heat diffusion layer interposed between the active region and the GaAs substrate diffuses the heat from the active region, and the heat is further diffused through the GaAs substrate and dissipated to the heat sink.
以下本発明をその実施例を示す図面に基づき具体的に説
明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below based on drawings showing embodiments thereof.
第１図は本発明に係る面発光型半導体レーザ装置の断面
構造図であり、図中１はＧａＡｓ製の基板を示している
。この基板１上にはエピタキシャル成長法により熱伝導
率がＧａＡ１板１のそれよりも大きい（０，８１Ｗ／ｃ
＋＋＋／ｄｅｇ程度）厚さ１μｍ程度のＡ Ｉ Ａｓ製
の熱拡散層２、ＧａＡ Ｉｔ Ａｓ／Ａ Ｉ Ａｓを交
互に重ねて形成した半導体多層膜の反射鏡３、クラッド
層４がこの順序で積層形成されている。そしてこのクラ
ッド層４表面に同じくエピタキシャル成長法により中央
部には活性領域５、クラフト層６が、またその周囲には
第１ブロック層７、第２ブロック層８が夫々この順序で
形成されている。そして前記第２ブロック層８及びクラ
ッド層６上にわたって電流拡散層９が積層形成され、こ
の電流拡散層９上の中央部に前記活性領域５と対向して
誘電体多層膜製の反射鏡１０が、またその周囲にはコン
タクト層１１及び電極１２がこの順序で形成され、更に
基板１の背面側にも電極１３が夫々形成されている。FIG. 1 is a cross-sectional structural diagram of a surface-emitting semiconductor laser device according to the present invention, and numeral 1 in the figure indicates a substrate made of GaAs. On this substrate 1, the thermal conductivity is higher than that of the GaA1 plate 1 (0.81 W/c) due to the epitaxial growth method.
+++/deg) A heat diffusion layer 2 made of AI As with a thickness of approximately 1 μm, a reflector 3 made of a semiconductor multilayer film formed by alternately stacking GaA It As/AI As, and a cladding layer 4 are laminated in this order. It is formed. On the surface of this cladding layer 4, an active region 5 and a craft layer 6 are formed in the central part, and a first block layer 7 and a second block layer 8 are formed in this order around the active region 5 and the craft layer 6, respectively, by the same epitaxial growth method. A current spreading layer 9 is laminated over the second block layer 8 and the cladding layer 6, and a reflecting mirror 10 made of a dielectric multilayer film is provided at the center of the current spreading layer 9, facing the active region 5. , a contact layer 11 and an electrode 12 are formed in this order around the contact layer 11 and an electrode 13 is formed on the back side of the substrate 1, respectively.
而してこのような本発明装置にあっては電極１３の下方
にヒートシンクを配する所謂ジャンクションアップで組
立てられ、この状態で電極１２．１３に電圧を印加し、
活性領域５から発光させ、半導体多層膜製の反射鏡３、
誘電体多層膜製の反射鏡１０間で共振させて、矢符で示
す如くにレーザビームを出射せしめるようになっている
。活性領域５からの発熱は反射鏡３を経てＡｌＡｓ製の
熱拡散層２に伝導され、ここで拡散されてＧａＡｓ製の
基板１に伝導され、ヒートシンクから抜熱されることと
なる。The device of the present invention is assembled in a so-called junction up manner in which a heat sink is disposed below the electrode 13, and in this state a voltage is applied to the electrodes 12 and 13.
Light is emitted from the active region 5, and a reflecting mirror 3 made of a semiconductor multilayer film;
Resonance is caused between the dielectric multilayer reflective mirrors 10 to emit a laser beam as shown by the arrow. Heat generated from the active region 5 is conducted to the heat diffusion layer 2 made of AlAs via the reflecting mirror 3, diffused there, and conducted to the substrate 1 made of GaAs, and is removed from the heat sink.
第２図は上述した如き本発明装置における活性領域５か
らの放熱状態を示す放熱モデル図である。FIG. 2 is a heat radiation model diagram showing the state of heat radiation from the active region 5 in the device of the present invention as described above.
説明を簡単にするため半導体多層膜製の反射鏡３、クラ
フト層４を省略し、活性領域５を直径りの円柱形とし、
ここからのみ発熱が生じるものとする。To simplify the explanation, the reflecting mirror 3 made of a semiconductor multilayer film and the craft layer 4 are omitted, and the active region 5 is made into a cylindrical shape with a diameter.
It is assumed that heat is generated only from here.
また熱拡散層２には活性領域５の直下からのみ熱が流れ
、更に基板１は無限大の大きさであり、無限遠での温度
上昇を零と仮定すると、面発光型レーザ装置における活
性領域５の温度上昇ΔＴは下記（１）式で表せる。Furthermore, heat flows into the thermal diffusion layer 2 only from directly below the active region 5, and furthermore, assuming that the substrate 1 has an infinite size and that the temperature rise at infinity is zero, the active region in a surface-emitting laser device The temperature rise ΔT in No. 5 can be expressed by the following equation (1).
ΔＴ−（ｖＪ＋Ｉ−Ｒ５）・Ｉ−ＲＬｌ、・・・（１）
但しν、：ジャンクション電圧
■ ：直流動作電流
Ｒｓニジリーズ抵抗
Ｒい：熱抵抗
なおＲいは下記（２）式で与えられる。ΔT-(vJ+I-R5)・I-RLl,...(1)
However, ν: Junction voltage ■: DC operating current Rs Nijilies resistance R: Thermal resistance R is given by the following equation (2).
但し Ｋに基板の熱伝導率
に２：熱拡散層の熱伝導率
一方面発光型半導体レーザ装置が連続動作時の閾値電流
Ｉｔｈｅ″は下記（３）弐で表せる。However, K is the thermal conductivity of the substrate and 2 is the thermal conductivity of the thermal diffusion layer.The threshold current Ithe'' when a single-sided emitting type semiconductor laser device is continuously operated can be expressed as (3) 2 below.
Ｉｚｈ”＝ Ｉｔｈ’ ｅｘｐ（ΔＴ／Ｔｏ） −（３
１但し■ｔｈＰ 、パルス動作時の闇値電流Ｔ０：特
性温度
（１）、 （３）弐を共に満たす解が存在する場合に面
発光型半導体レーザ装置は連続発振が可能となる。Izh"=Ith'exp(ΔT/To)-(3
1 However, if there exists a solution that satisfies both thP, dark value current T0 during pulse operation: characteristic temperature (1), and (3)2, the surface-emitting semiconductor laser device becomes capable of continuous oscillation.
上記条件式（１１，（３１を満足する場合の数値例を示
すと表１の如くである。Table 1 shows numerical examples when the above conditional expressions (11, (31) are satisfied.
表 １
なおこのときの活性領域の温度上昇ΔＴは４８℃である
。Table 1 Note that the temperature rise ΔT in the active region at this time was 48°C.
これに対しＡ Ｉ Ａｓ製の熱拡散層が存在しない従来
装置では第３図に示す如く基板と同じＧａＡｓ製のバッ
ファ層２２が存在するからその熱伝導率を基板と同じ０
．４７Ｗ／ｃｍ／ｄｅｇとすると、他の条件を同じとし
て（１１，（３１式から連続発振は可能であるが、活性
領域の温度上昇は６０℃となり、本発明装置に比較して
活性領域の温度が大幅に高くなる。On the other hand, in the conventional device which does not have a heat diffusion layer made of AIAs, as shown in FIG.
．． 47 W/cm/deg, assuming other conditions are the same (11, (from formula 31, continuous oscillation is possible, but the temperature rise in the active region is 60°C, which is lower than the temperature in the active region compared to the device of the present invention. becomes significantly higher.
なお上述した実施例においては熱拡散層２の材料として
Ａ７！Ａｓを用いた場合を示したが、何らこれに限るも
のではなく、基板１の熱伝導率よりも大きい熱伝導率を
有する材料であればよい。In the above embodiment, the material of the heat diffusion layer 2 is A7! Although the case where As is used is shown, the material is not limited to this at all, and any material having a thermal conductivity higher than that of the substrate 1 may be used.
以上の如く本発明装置にあっては活性領域と基板との間
に熱拡散層を介装することとしたから、放熱特性が改善
され、活性領域の温度上昇を大幅に低減し得るなど本発
明は優れた効果を奏するものである。As described above, in the device of the present invention, since the heat diffusion layer is interposed between the active region and the substrate, the heat dissipation characteristics are improved and the temperature rise in the active region can be significantly reduced. has excellent effects.
第１図は本発明装置の断面構造図、第２図は本発明装置
における放熱モデル図、第３図は従来装置の断面構造図
である。FIG. 1 is a cross-sectional structural diagram of the device of the present invention, FIG. 2 is a heat dissipation model diagram of the device of the present invention, and FIG. 3 is a cross-sectional structural diagram of the conventional device.
Claims (1)
領域及び他の反射鏡を順次的に積層して構成した面発光
型レーザ装置において、前記半導体多層膜製の反射鏡と
ＧａＡｓ基板との間に熱拡散層を介装したことを特徴と
する面発光型半導体レーザ装置。1. In a surface-emitting laser device configured by sequentially stacking a semiconductor multilayer film reflector, an active region, and other reflectors on the surface of a GaAs substrate, the relationship between the semiconductor multilayer film reflector and the GaAs substrate is A surface-emitting semiconductor laser device characterized by having a heat diffusion layer interposed therebetween.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8364690A JP2967137B2 (en) | 1990-03-29 | 1990-03-29 | Surface-emitting type semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8364690A JP2967137B2 (en) | 1990-03-29 | 1990-03-29 | Surface-emitting type semiconductor laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03283480A true JPH03283480A (en) | 1991-12-13 |
| JP2967137B2 JP2967137B2 (en) | 1999-10-25 |
Family
ID=13808218
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8364690A Expired - Fee Related JP2967137B2 (en) | 1990-03-29 | 1990-03-29 | Surface-emitting type semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2967137B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006059364A1 (en) | 2004-11-30 | 2006-06-08 | Mitsubishi Denki Kabushiki Kaisha | Device and method for repairing moving handrail of passenger conveyor |
| JP2009529243A (en) * | 2006-03-07 | 2009-08-13 | メアリー ケイ ブレナー | Red laser |
| JP2009246051A (en) * | 2008-03-28 | 2009-10-22 | Kyocera Corp | Light-emitting device and method of manufacturing the same |
| CN110137801A (en) * | 2019-03-29 | 2019-08-16 | 华灿光电(苏州）有限公司 | Vertical cavity surface emitting laser and preparation method thereof |
-
1990
- 1990-03-29 JP JP8364690A patent/JP2967137B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006059364A1 (en) | 2004-11-30 | 2006-06-08 | Mitsubishi Denki Kabushiki Kaisha | Device and method for repairing moving handrail of passenger conveyor |
| JP2009529243A (en) * | 2006-03-07 | 2009-08-13 | メアリー ケイ ブレナー | Red laser |
| JP2009246051A (en) * | 2008-03-28 | 2009-10-22 | Kyocera Corp | Light-emitting device and method of manufacturing the same |
| CN110137801A (en) * | 2019-03-29 | 2019-08-16 | 华灿光电(苏州）有限公司 | Vertical cavity surface emitting laser and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2967137B2 (en) | 1999-10-25 |
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