CN110085713B - 一种带有***层的多量子阱发光二极管及其制备方法 - Google Patents
一种带有***层的多量子阱发光二极管及其制备方法 Download PDFInfo
- Publication number
- CN110085713B CN110085713B CN201910478633.6A CN201910478633A CN110085713B CN 110085713 B CN110085713 B CN 110085713B CN 201910478633 A CN201910478633 A CN 201910478633A CN 110085713 B CN110085713 B CN 110085713B
- Authority
- CN
- China
- Prior art keywords
- layer
- quantum well
- layers
- type semiconductor
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000003780 insertion Methods 0.000 title claims abstract description 30
- 230000037431 insertion Effects 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 34
- 230000004888 barrier function Effects 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 14
- 229910052961 molybdenite Inorganic materials 0.000 claims description 11
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 230000000903 blocking effect Effects 0.000 claims description 9
- 229910021389 graphene Inorganic materials 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 238000010791 quenching Methods 0.000 abstract description 5
- 230000000171 quenching effect Effects 0.000 abstract description 5
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 230000009643 growth defect Effects 0.000 abstract 2
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 7
- 239000000969 carrier Substances 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910478633.6A CN110085713B (zh) | 2019-06-03 | 2019-06-03 | 一种带有***层的多量子阱发光二极管及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910478633.6A CN110085713B (zh) | 2019-06-03 | 2019-06-03 | 一种带有***层的多量子阱发光二极管及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110085713A CN110085713A (zh) | 2019-08-02 |
CN110085713B true CN110085713B (zh) | 2021-01-19 |
Family
ID=67423336
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910478633.6A Active CN110085713B (zh) | 2019-06-03 | 2019-06-03 | 一种带有***层的多量子阱发光二极管及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN110085713B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111613698B (zh) * | 2020-05-22 | 2020-12-01 | 山西穿越光电科技有限责任公司 | 石墨烯插层iii族氮化物半导体复合薄膜及其制备方法 |
CN113363360B (zh) * | 2021-05-21 | 2022-09-09 | 厦门士兰明镓化合物半导体有限公司 | 垂直结构led芯片及其制造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8901536B2 (en) * | 2010-09-21 | 2014-12-02 | The United States Of America, As Represented By The Secretary Of The Navy | Transistor having graphene base |
JP2015015321A (ja) * | 2013-07-03 | 2015-01-22 | 高槻電器工業株式会社 | 半導体発光素子及びその製造方法 |
CN106206254A (zh) * | 2016-07-13 | 2016-12-07 | 合肥工业大学 | 具有优异光致发光特性的大面积二维层状材料的制备方法 |
CN109786512A (zh) * | 2018-12-13 | 2019-05-21 | 华灿光电(浙江)有限公司 | 一种发光二极管外延片及其制备方法 |
CN109830580B (zh) * | 2019-01-29 | 2021-10-08 | 华灿光电(浙江)有限公司 | 氮化镓基发光二极管外延片及其制造方法 |
-
2019
- 2019-06-03 CN CN201910478633.6A patent/CN110085713B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN110085713A (zh) | 2019-08-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4341702B2 (ja) | Iii族窒化物系半導体発光素子 | |
TWI499080B (zh) | 氮化物半導體結構及半導體發光元件 | |
KR101238459B1 (ko) | 질화물 반도체 발광 소자 | |
CN108198921B (zh) | 一种氮化镓基发光二极管外延片及其制造方法 | |
KR20090035934A (ko) | 반도체 발광소자 및 그 제조방법 | |
TW201403864A (zh) | 氮化物半導體發光元件及其製造方法 | |
CN109346575B (zh) | 一种发光二极管外延片及其制备方法 | |
CN105206726A (zh) | 一种led结构及其生长方法 | |
CN109411579B (zh) | 具有石墨烯结构的半导体器件及其制备方法 | |
CN110098294B (zh) | 具有新型量子垒结构的紫外led外延结构及其制备方法 | |
WO2019015217A1 (zh) | 一种深紫外led | |
WO2019015186A1 (zh) | 一种紫外led外延结构 | |
CN114447165B (zh) | Led外延结构及其制备方法 | |
CN109860353B (zh) | 一种GaN基发光二极管外延片及其制备方法 | |
CN218827205U (zh) | 发光二极管外延片及发光二极管 | |
CN110890447A (zh) | 一种具有渐变Al组分AlGaN导电层的发光二极管及其制备方法 | |
CN110085713B (zh) | 一种带有***层的多量子阱发光二极管及其制备方法 | |
CN109671817B (zh) | 一种发光二极管外延片及其制备方法 | |
CN108281519A (zh) | 一种发光二极管外延片及其制造方法 | |
CN109860341B (zh) | 一种GaN基发光二极管外延片及其制备方法 | |
CN209461482U (zh) | 基于超晶格势垒量子阱结构的led | |
CN109461802B (zh) | 一种GaN基发光二极管外延片及其制备方法 | |
CN113594317A (zh) | 降低工作电压的紫外发光二极管外延片及其制备方法 | |
CN114188449B (zh) | 一种电子阻挡层生长方法、外延层及led芯片 | |
CN211719609U (zh) | 一种光电器件结构 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20210106 Address after: 044500 circular economy industrial park, Chengdong street, Yongji City, Yuncheng City, Shanxi Province Applicant after: Shanxi crossing Photoelectric Technology Co., Ltd Address before: 300270 105-3-602, century garden, Gulin street, Binhai New Area, Tianjin Applicant before: Liu Weidong Applicant before: Xiao Kaixiang Applicant before: Pu Dan Dan Applicant before: Zhao Wei |
|
TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant |