CN110021660A - AlGaN/GaN异质结垂直型场效应晶体管及其制作方法 - Google Patents
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
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- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
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- 229910052733 gallium Inorganic materials 0.000 description 1
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Abstract
本发明提出了一种AlGaN/GaN异质结垂直型场效应晶体管及其制作方法,该器件的主要特点是采用了特殊的漂移区即由N型漂移区与N+电流通道组成,同时利用AlGaN/GaN异质结形成的二维电子气和N+电流通道构造了新的电流通道,并且采用了P型屏蔽层。在正向导通时,P型屏蔽层几乎不会影响N+电流通道,可以获得较低的导通电阻。在器件关断时,随着漏极电压的升高,P型屏蔽层附近的耗尽区扩展,N+电流通路被夹断后,漂移区承担反向偏压,可以获得较高的击穿电压,因此弱化了击穿电压与漂移区浓度之间的矛盾关系。结合以上优势,与传统垂直型场效应晶体管相比,本发明提出的结构能承受更高的耐压,同时具有更低的导通损耗。
Description
技术领域
本发明涉及功率半导体器件领域,尤其涉及一种AlGaN/GaN垂直型场效应晶体管。
背景技术
氮化镓和碳化硅为代表的宽禁带化合物半导体材料,以其远优于传统硅材料的器件特性,正获得越来越的应用,氮化镓材料作为第三代半导体材料的核心之一,相比于碳化硅功率器件由于其易于实现的异质结构、高浓度的二维电子气(2DEG)、高的沟道电子迁移率、高的击穿电场广泛的应用于高速、高频领域。
在宽带隙半导体中杂质扩散速率很低,即使在高温情况下也是如此,因此一般采用双注入工艺,注入结较浅,当P型基区的耗尽区达到源区,会出现源漏穿通现象,导致击穿电压受到限制。宽带隙材料器件中为了避免基区穿通效应,需要高掺杂浓度的P型基区,由于宽带隙材料特性会导致极高的阈值电压。此外在器件关断时,由于较高的电压,栅介质层中内会产生高电场,很容易导致氧化层破裂甚至击穿,器件的寿命和可靠性也会大大降低。
发明内容
本发明提出一种新型AlGaN/GaN异质结垂直型场效应晶体管,旨在进一步提高垂直型场效应晶体管的击穿电压,降低其导通电阻,改善器件性能。
本发明的技术方案如下:
该AlGaN/GaN异质结垂直型场效应晶体管,包括:
半导体材料的衬底,兼作漏区;
在衬底上外延生长形成氮化镓材料的N型漂移区;
分别在N型漂移区上部的左、右两端区域形成的两处P型基区以及相应的N+型源区和P+沟道衬底接触;每一处P型基区中形成沟道,其中N+型源区与沟道邻接,P+沟道衬底接触相对于N+型源区位于沟道远端;
源极,覆盖P+沟道衬底接触与相应N+型源区相接区域的上表面;两处源极共接;
漏极,位于衬底下表面;
有别于现有技术的是:N型漂移区的中间区域通过离子注入形成N+电流通道,该N+电流通道纵向贯通N型漂移区;N+电流通道的掺杂浓度远高于N型漂移区的掺杂浓度;
在N+电流通道及其两侧与N型漂移区邻接的区域表面异质外延生长有AlGaN层,使得AlGaN/GaN异质结能够产生二维电子气(2DEG);
栅介质层一体覆盖两处P型基区相应的沟道部分以及AlGaN层的上表面和侧面;栅介质层表面覆盖栅极;
两处P型基区以及相应的N+型源区和P+沟道衬底接触的下方通过离子注入还形成有P型屏蔽层。
进一步的,衬底的材料采用氮化镓。
进一步的,N型漂移区的掺杂浓度比N+电流通道的掺杂浓度小1-3个数量级。
进一步的,P型屏蔽层与N+电流通道的距离大于或等于0。
进一步的,N型漂移区的掺杂浓度典型值为1×1015cm-3~1×1016cm-3;N+电流通道的掺杂浓度典型值为1×1016cm-3~1×1018cm-3。
进一步的,P型屏蔽层的掺杂浓度典型值为1×1017cm-3~1×1019cm-3。
进一步的,栅介质层的厚度为0.02~0.1μm。
进一步的,P型基区的掺杂浓度为1×1016cm-3~1×1017cm-3。
一种制作上述AlGaN/GaN异质结的垂直型场效应晶体管的方法,包括以下步骤:
(1)取氮化镓材料作为衬底同时作为漏区;
(2)在衬底上形成外延层作为轻掺杂漂移区;
(3)在外延层中间通过离子注入形成重掺杂漂移区;
(4)根据所设计击穿电压的要求重复步骤(2)和(3)达到所要求的漂移区厚度;
(5)在GaN外延层上通过异质外延形成AlGaN层;
(6)在指定区域刻蚀去除AlGaN层,在GaN外延层上部的左、右两端区域采用离子注入形成P型屏蔽层、P型基区及其N+型源区和P+沟道衬底接触,形成相应的沟道;
(7)在两侧沟道和中间AlGaN/GaN表面形成栅介质层,并淀积金属形成栅极;
(8)在器件表面淀积钝化层,并在对应于源极的位置刻蚀接触孔;
(9)在接触孔内淀积金属并刻蚀(去除周边其余的钝化层)形成源极,并将两处源极共接。
本发明技术方案的有益效果如下:
本发明将AlGaN/GaN异质结形成的二维电子气和N+电流通道构造了新的电流通道;采用了P型屏蔽层,解决了宽带隙半导体材料在高电压下容易发生源漏穿通的问题,使得可以减小沟道的浓度以获取合适的阈值电压。器件关断时,P型屏蔽层有效的降低了栅介质层中的峰值电场,提高了器件的可靠性,在正向导通时,由于新的电流通道,可以获得较低的导通电阻,在器件关断时,整个漂移区承担反向偏压,可以获得较高的击穿电压,弱化了击穿电压与漂移区浓度之间的矛盾关系。
该AlGaN/GaN异质结的垂直型场效应晶体管,在相同漂移区长度(图中所示纵向尺寸)的情况下,具有更高的耐压和更低的导通损耗,具有更好的性能。
附图说明
图1是本发明的结构示意图。
其中,1-P+沟道衬底接触(P+型体区);2-N+型源区;3-P型基区;4-AlGaN层;5-栅极;6-栅介质层;7-源极;8-P型屏蔽层;9-N型漂移区;10-衬底(兼作漏区);11-漏极;12-N+电流通道。
具体实施方式
下面结合附图以N沟道AlGaN/GaN异质结垂直型场效应晶体管为例介绍本发明。
如图1所示,该器件的漂移区由N型漂移区与N+电流通道两部分组成,同时设置了P型屏蔽层。其中,N型漂移区的厚度和由器件的耐压要求决定,N+电流通道的浓度以及深度由器件的导通损耗决定;P型屏蔽层的浓度、厚度、长度由器件的耐压要求决定,P型基区的浓度由器件的阈值电压决定。
P型屏蔽层的长度大于或等于P型基区、N+型源区和P+沟道衬底接触的整体长度。
N型漂移区的掺杂浓度根据设计的击穿电压确定,典型掺杂浓度范围为1×1015cm-3~1×1016cm-3。
N+电流通道的掺杂浓度根据设计的击穿电压确定,典型掺杂浓度范围为1×1016cm-3~1×1018cm-3。
P型基区的掺杂浓度根据设计的阈值电压确定,典型掺杂浓度范围为1×1016cm-3~1×1017cm-3。
P型屏蔽层的掺杂浓度根据设计的击穿电压确定,典型掺杂浓度范围为1×1017cm-3~1×1019cm-3。
N型氮化镓外延层的厚度根据设计的击穿电压确定,例如:耐压为800V时,N型氮化镓外延层的厚度大约为5μm;
栅介质层的厚度根据阈值电压确定,典型值为0.02~0.1μm;
P型屏蔽层、P型基区及其N+型源区和P+沟道衬底接触以及沟道,是在N型外延层上部采用离子注入形成的。
P型掺杂GaN可以通过Mg或者其他可掺杂元素外延生长形成,视掺杂效果和需求而定。
源极、栅极、漏极均通过欧姆接触与GaN层、AlGaN层相连。
该器件具体可按照以下步骤制作:
(1)取GaN材料作N+衬底,同时作为漏区;
(2)在N+型衬底上表面形成的GaN材料的N型外延层,在中间区域通过离子注入形成N+电流通道,外延注入的次数由所设计的击穿电压确定,例如耐压800v时候,漂移区的长度典型值为5μm,需要2~3次外延注入;
(3)在N+型衬底下表面形成金属化漏极;
(4)在所述漂移区上通过异质外延形成AlGaN层;
(5)在指定区域刻蚀去除AlGaN层,在掩膜的保护下,在GaN外延层上部的左、右两端区域采用离子注入形成P型屏蔽层、P型基区及其N+型源区和P+沟道衬底接触,形成相应的沟道;
(6)在两侧沟道及中间AlGaN/GaN表面形成栅介质层,并淀积金属形成栅极;
(7)在器件表面淀积钝化层,并在对应于源极的位置刻蚀接触孔;
(8)在接触孔内淀积金属并刻蚀(去除周边其余的钝化层)形成源极,并将两处源极共接。
本发明采用了特殊的漂移区(由N型漂移区与N+电流通道组成),同时利用AlGaN/GaN异质结形成的二维电子气和N+电流通道构造了新的电流通道,并且采用了P型屏蔽层。由于P型屏蔽层的作用,解决了氮化镓半导体材料在高电压下容易发生源漏穿通的问题,可以减小沟道的浓度以获取合适的阈值电压,而且P型屏蔽层有效降低了栅介质层中的峰值电场,提高了器件的可靠性。在正向导通时,P型屏蔽层几乎不会影响N+电流通道,可以获得较低的导通电阻。在器件关断时,随着漏极电压的升高,P型屏蔽层附近的耗尽区扩展,N+电流通路被夹断后,漂移区承担反向偏压,可以获得较高的击穿电压,因此弱化了击穿电压与漂移区浓度之间的矛盾关系。结合以上优势,与传统垂直型场效应晶体管相比,本发明提出的结构能承受更高的耐压,同时具有更低的导通损耗。
经ISE TCAD仿真表明,本发明的性能较之于传统宽禁带垂直型场效应晶体管明显提升,当两种器件具有相等的击穿电压时,新型器件的导通电阻下降了30%以上。
基于本发明的原理,本领域技术人员应当能够认识到,采用能形成二维电子气的其他宽带隙半导体材料如砷化镓等,属于本发明的等同方案,也应当视为属于本专利申请权利要求的保护范围。
本发明中的垂直型场效应晶体管当然也可以为P型沟道,其结构与N沟道垂直型场效应晶体管等同,也应当视为属于本专利申请权利要求的保护范围,在此不再赘述。
Claims (9)
1.AlGaN/GaN异质结垂直型场效应晶体管,包括:
半导体材料的衬底(10),兼作漏区;
在衬底上外延生长形成氮化镓材料的N型漂移区(9);
分别在N型漂移区(9)上部的左、右两端区域形成的两处P型基区(3)以及相应的N+型源区(2)和P+沟道衬底接触(1);每一处P型基区(3)中形成沟道,其中N+型源区(2)与沟道邻接,P+沟道衬底接触(1)相对于N+型源区(2)位于沟道远端;
源极(7),覆盖P+沟道衬底接触(1)与相应N+型源区(2)相接区域的上表面;两处源极共接;
漏极(11),位于衬底下表面;
其特征在于:
N型漂移区(9)的中间区域通过离子注入形成N+电流通道(12),该N+电流通道(12)纵向贯通N型漂移区(9);N+电流通道(12)的掺杂浓度远高于N型漂移区(9)的掺杂浓度;
在N+电流通道(12)及其两侧与N型漂移区(9)邻接的区域表面异质外延生长有AlGaN层(4),使得AlGaN/GaN异质结能够产生二维电子气(2DEG);
栅介质层(6)一体覆盖两处P型基区(3)相应的沟道部分以及AlGaN层(4)的上表面和侧面;栅介质层(6)表面覆盖栅极(5);
两处P型基区(3)以及相应的N+型源区(2)和P+沟道衬底接触(1)的下方通过离子注入还形成有P型屏蔽层(8)。
2.根据权利要求1所述的AlGaN/GaN异质结垂直型场效应晶体管,其特征在于:所述衬底的材料采用氮化镓。
3.根据权利要求1所述的AlGaN/GaN异质结垂直型场效应晶体管,其特征在于:所述N型漂移区(9)的掺杂浓度比N+电流通道(12)的掺杂浓度小1-3个数量级。
4.根据权利要求1所述的AlGaN/GaN异质结垂直型场效应晶体管,其特征在于:P型屏蔽层(8)与N+电流通道(12)的距离大于或等于0。
5.根据权利要求1所述的AlGaN/GaN异质结垂直型场效应晶体管,其特征在于:所述N型漂移区(9)的掺杂浓度典型值为1×1015cm-3~1×1016cm-3;所述N+电流通道(12)的掺杂浓度典型值为1×1016cm-3~1×1018cm-3。
6.根据权利要求1所述的AlGaN/GaN异质结垂直型场效应晶体管,其特征在于:所述P型屏蔽层(8)的掺杂浓度典型值为1×1017cm-3~1×1019cm-3。
7.根据权利要求1所述的AlGaN/GaN异质结垂直型场效应晶体管,其特征在于:栅介质层的厚度为0.02~0.1μm。
8.根据权利要求1所述的AlGaN/GaN异质结垂直型场效应晶体管,其特征在于:P型基区(3)的掺杂浓度为1×1016cm-3~1×1017cm-3。
9.一种制作权利要求1所述的AlGaN/GaN异质结垂直型场效应晶体管的方法,包括以下步骤:
(1)取氮化镓材料作为衬底,同时作为漏区;
(2)在衬底上形成外延层作为轻掺杂漂移区,即N型漂移区(9);
(3)在外延层中间通过离子注入形成重掺杂漂移区,即N+电流通道(12);
(4)根据所设计击穿电压的要求重复步骤(2)和(3)达到所要求的漂移区厚度;
(5)在外延层上通过异质外延形成AlGaN层;
(6)在指定区域刻蚀去除AlGaN层,在GaN外延层上部的左、右两端区域采用离子注入形成P型屏蔽层、P型基区及其N+型源区和P+沟道衬底接触,形成相应的沟道;
(7)在两侧沟道和中间AlGaN/GaN表面形成栅介质层,并淀积金属形成栅极;
(8)在器件表面淀积钝化层,并在对应于源极的位置刻蚀接触孔;
(9)在接触孔内淀积金属并刻蚀形成源极,并将两处源极共接。
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