CN109979894A - A kind of radiator of high-power patch - Google Patents
A kind of radiator of high-power patch Download PDFInfo
- Publication number
- CN109979894A CN109979894A CN201711461642.1A CN201711461642A CN109979894A CN 109979894 A CN109979894 A CN 109979894A CN 201711461642 A CN201711461642 A CN 201711461642A CN 109979894 A CN109979894 A CN 109979894A
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- CN
- China
- Prior art keywords
- heat
- power device
- radiator
- face
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention belongs to heat abstractor technical fields, more particularly to a kind of radiator of high-power patch, one end face of stem is connected to high power device, its other end gap is connected to a surface of heat conductive silica gel, another surface of the heat conductive silica gel carries an end face of its substrate, the other end of the substrate is connected to the end face that cooling fin is connected to through heat gap, the present invention solves the prior art and exists since the calorific value of power device is larger, the heat dissipation of heating device cannot be solved preferably always, the problem of so as to cause the service life or hazard rate height etc. for shortening power device, with the service life for extending power device, improve radiating efficiency, improve heat dissipation effect, the advantageous effects of high reliablity.
Description
Technical field
The invention belongs to heat abstractor technical field more particularly to a kind of radiators of high-power patch.
Background technique
Generated heat when radiator being the operating of machinery equipment component for reducing equipment operation, thus mechanical equipment
Component heat dissipation refrigeration is to increase the mechanical action service life.So the quality of radiator directly affects the longevity of operating mechanical equipment component
Life, the prior art exist since the calorific value of power device is larger, the heat dissipation of heating device cannot be solved preferably always,
The problem of so as to cause the service life or hazard rate height etc. for shortening power device.
Summary of the invention
The present invention provides a kind of radiator of high-power patch, to solve to propose the prior art in above-mentioned background technique
It is larger in the presence of the calorific value due to power device, the heat dissipation of heating device cannot be solved preferably always, so as to cause contracting
The problem of service life of short power device or hazard rate height etc..
Technical problem solved by the invention is realized using following technical scheme: a kind of heat dissipation dress of high-power patch
It sets, the stem including being connected axially to lead frame, one end face of stem is connected to high power device, between other end
Gap is connected to a surface of heat conductive silica gel, and another surface of the heat conductive silica gel carries an end face of its substrate, the substrate
Other end be connected to the end face that cooling fin is connected to through heat gap.
Further, the substrate is aluminum substrate.
Further, the heat gap forms radial heat loss through convection.
Further, the high power device includes such as great power LED, IGBT constant power device.
Further, the other end of the cooling fin is connected to pcb board.
Further, the heat of the power device conduction is through sequentially connected stem, heat conductive silica gel, substrate, cooling fin
Form passage of heat.
Advantageous effects:
1, for this patent using the stem for being connected axially to lead frame, one end face of stem is connected to high-power device
Part, other end gap are connected to a surface of heat conductive silica gel, and another surface of the heat conductive silica gel carries its substrate
One end face, the other end of the substrate is connected to the end face that cooling fin is connected to through heat gap, due in high-power device
In the part course of work, due to being PN junction work, high power device has fever phenomenon generation, so must do in response to this
Good heat dissipation design, the radiator that the heat generated after high power device fever mainly passes through LED substrate and is mounted on LED pass
Export is gone, specifically, forming the major heat flow path from PN junction, another portion from lead frame to lead end by heat transfer
The transmission path divided is from the surface of chip to package surface, and heat passes through heat transfer and through circuit board simultaneously from lead end
Surface convection current and radiation are realized by thermal extraction spreads, and the efficiency of thermal transfer from pcb board to air is between chip and air
Temperature difference have significant influence, due to use good heat dissipation design, significantly extend power device service life.
2, this patent uses the substrate for aluminum substrate, and the heat gap forms radial heat loss through convection, due to using
Aluminum substrate and the mode of gap convection current radiate, and substantially increase radiating efficiency.
3, this patent position of power device and peripheral devices on the cooling fin of given area is remote as far as possible, is designing
When PCB plate, so that the position of power device should disperse as far as possible, it not concentrate in together, improve heat dissipation effect.
4, this patent makes it below the safe junction temperature of high power device normal work, to improve function to especially junction temperature T
The reliability of rate device work is that conventional diffusers tend to standardization, seriation, unitized direction.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of the radiator of high-power patch of the present invention.
Specific embodiment
The present invention is described further below in conjunction with attached drawing:
In figure: 1- lead frame, 2- stem, 3- high power device, 4- heat conductive silica gel, 5- substrate, 6- cooling fin, 7- are thermally conductive
Channel.
Embodiment:
The present embodiment: as shown in Figure 1, a kind of radiator of high-power patch, including being connected axially to drawing for lead frame 1
Terminal 2,2 one end face of stem are connected to high power device 3, and other end gap is connected to a table of heat conductive silica gel 4
Face, another surface of the heat conductive silica gel 4 carry an end face of its substrate 5, and the other end of the substrate 5 is connected to through dissipating
Hot gap is connected to an end face of cooling fin 6.
The substrate 5 is aluminum substrate 5.
The heat gap forms radial heat loss through convection.
The high power device 3 includes such as great power LED, IGBT constant power device.
The other end of the cooling fin 6 is connected to pcb board.
The heat of the power device conduction is formed through sequentially connected stem 2, heat conductive silica gel 4, substrate 5, cooling fin 6
Passage of heat 7.
Working principle:
This patent is connected to high power device by being connected axially to the stem of lead frame, one end face of stem,
Its other end gap is connected to a surface of heat conductive silica gel, and another surface of the heat conductive silica gel carries one end of its substrate
Face, the other end of the substrate is connected to the end face that cooling fin is connected to through heat gap, due in high power device work
During work, due to being PN junction work, high power device has fever phenomenon generation, so must carry out in response to this scattered
Thermal design, the radiator that the heat generated after high power device fever mainly passes through LED substrate and is mounted on LED transfer out
It goes, specifically, the major heat flow path from PN junction is formed from lead frame to lead end by heat transfer, another part
Transmission path is from the surface of chip to package surface, and heat passes through heat transfer and through the surface of circuit board simultaneously from lead end
Convection current and radiation are realized by thermal extraction spreads, and the efficiency of thermal transfer from pcb board to air is for the temperature between chip and air
Degree difference has significant influence, and the present invention solves the prior art and exists since the calorific value of power device is larger, for heater
The heat dissipation of part cannot be solved preferably always, so as to cause the service life of power device or asking for hazard rate height etc. is shortened
Topic has the service life for extending power device, the beneficial skill for improving radiating efficiency, improving heat dissipation effect, high reliablity
Art effect.
Using technical solution of the present invention or those skilled in the art under the inspiration of technical solution of the present invention, design
Similar technical solution out, and reach above-mentioned technical effect, it is to fall into protection scope of the present invention.
Claims (6)
1. a kind of radiator of high-power patch, which is characterized in that the stem including being connected axially to lead frame, it is described to draw
One end face of terminal is connected to high power device, and other end gap is connected to a surface of heat conductive silica gel, the heat conductive silica gel
Another surface carry its substrate an end face, the other end of the substrate, which is connected to, is connected to cooling fin through heat gap
An end face.
2. a kind of radiator of high-power patch according to claim 1, which is characterized in that the substrate is aluminium base
Plate.
3. a kind of radiator of high-power patch according to claim 1, which is characterized in that the heat gap is formed
Radial heat loss through convection.
4. a kind of radiator of high-power patch according to claim 1, which is characterized in that the high power device packet
It includes such as great power LED, IGBT constant power device.
5. a kind of radiator of high-power patch according to claim 1, which is characterized in that the cooling fin it is another
End face is connected to pcb board.
6. a kind of radiator of high-power patch according to claim 1, which is characterized in that the power device conduction
Heat through sequentially connected stem, heat conductive silica gel, substrate, cooling fin formed passage of heat.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711461642.1A CN109979894A (en) | 2017-12-28 | 2017-12-28 | A kind of radiator of high-power patch |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711461642.1A CN109979894A (en) | 2017-12-28 | 2017-12-28 | A kind of radiator of high-power patch |
Publications (1)
Publication Number | Publication Date |
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CN109979894A true CN109979894A (en) | 2019-07-05 |
Family
ID=67074884
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201711461642.1A Withdrawn CN109979894A (en) | 2017-12-28 | 2017-12-28 | A kind of radiator of high-power patch |
Country Status (1)
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CN (1) | CN109979894A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112397216A (en) * | 2020-10-27 | 2021-02-23 | 乾宇电子材料(深圳)有限公司 | Screen printing silver paste and organic composition |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101556941A (en) * | 2009-05-13 | 2009-10-14 | 重庆三祥汽车电控***有限公司 | Heat radiation structure of surface mounting high-power element |
US20110291249A1 (en) * | 2010-05-26 | 2011-12-01 | Stats Chippac, Ltd. | Semiconductor Device and Method of Forming Conductive Posts and Heat Sink Over Semiconductor Die Using Leadframe |
CN102290523A (en) * | 2011-08-26 | 2011-12-21 | 珠海市远康企业有限公司 | LED (light emitting diode) heat radiation structure |
CN203703686U (en) * | 2014-01-20 | 2014-07-09 | 吴化先 | High-power LED illumination lamp |
CN204227375U (en) * | 2014-11-05 | 2015-03-25 | 湖北楚骥科技有限公司 | For fin, the LED illumination lamp of high-power LED illuminating lamp |
CN207011177U (en) * | 2017-05-12 | 2018-02-13 | 天津乾宇电子有限公司 | A kind of heat abstractor of high-power paster |
-
2017
- 2017-12-28 CN CN201711461642.1A patent/CN109979894A/en not_active Withdrawn
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101556941A (en) * | 2009-05-13 | 2009-10-14 | 重庆三祥汽车电控***有限公司 | Heat radiation structure of surface mounting high-power element |
US20110291249A1 (en) * | 2010-05-26 | 2011-12-01 | Stats Chippac, Ltd. | Semiconductor Device and Method of Forming Conductive Posts and Heat Sink Over Semiconductor Die Using Leadframe |
CN102290523A (en) * | 2011-08-26 | 2011-12-21 | 珠海市远康企业有限公司 | LED (light emitting diode) heat radiation structure |
CN203703686U (en) * | 2014-01-20 | 2014-07-09 | 吴化先 | High-power LED illumination lamp |
CN204227375U (en) * | 2014-11-05 | 2015-03-25 | 湖北楚骥科技有限公司 | For fin, the LED illumination lamp of high-power LED illuminating lamp |
CN207011177U (en) * | 2017-05-12 | 2018-02-13 | 天津乾宇电子有限公司 | A kind of heat abstractor of high-power paster |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112397216A (en) * | 2020-10-27 | 2021-02-23 | 乾宇电子材料(深圳)有限公司 | Screen printing silver paste and organic composition |
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WW01 | Invention patent application withdrawn after publication |
Application publication date: 20190705 |
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WW01 | Invention patent application withdrawn after publication |