CN109962135A - Electroluminescent device - Google Patents
Electroluminescent device Download PDFInfo
- Publication number
- CN109962135A CN109962135A CN201910249929.0A CN201910249929A CN109962135A CN 109962135 A CN109962135 A CN 109962135A CN 201910249929 A CN201910249929 A CN 201910249929A CN 109962135 A CN109962135 A CN 109962135A
- Authority
- CN
- China
- Prior art keywords
- conductive layer
- magnetic conductive
- electroluminescent device
- glass substrate
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011521 glass Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 7
- RIVZIMVWRDTIOQ-UHFFFAOYSA-N cobalt iron Chemical group [Fe].[Co].[Co].[Co] RIVZIMVWRDTIOQ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000003682 fluorination reaction Methods 0.000 claims description 3
- 230000005426 magnetic field effect Effects 0.000 abstract description 5
- 244000144992 flock Species 0.000 abstract description 4
- 230000002708 enhancing effect Effects 0.000 description 3
- 230000003760 hair shine Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention provides a kind of electroluminescent device applied to bottom emitting type OLED, including glass substrate, buffer layer, transparent cathode, luminescent layer and the metal anode set gradually from top to bottom, it is characterized in that, being formed with magnetic conductive layer on one side away from luminescent layer in transparent cathode.The present invention also provides a kind of electroluminescent devices applied to top-emitting OLED, including the metallic cathode, luminescent layer and transparent anode set gradually from top to bottom, which is characterized in that are formed with magnetic conductive layer on one side away from luminescent layer in metallic cathode.The magnetic field effect that the present invention is generated by magnetic conductive layer can make triplet excitons flock together to collide, to improve the light emission luminance of El element.
Description
Technical field
The present invention relates to electroluminescent device technical fields, more specifically, are related to a kind of electroluminescent device.
Background technique
Electroluminescent (electroluminescent), and electroluminescence can be claimed, abbreviation EL is by being added in two electrodes
Voltage generates electric field, and the electronics excited by electric field hits the centre of luminescence, and is led to electronics in transition between energy level, variation, compound
Lead to a kind of luminous physical phenomenon.
Theoretical according to exciton recombination luminescence, electronics (e) and hole (h) reach and shine respectively from device cathode and anode injection
When near the interface in area, due to the effect by Coulomb force, electrons and holes are close to each other and are bound together, and form electronics
(e) to (h), this electron-hole pair can be converted to two kinds of excitons in-hole: first is that the singlet that formation can emit photon swashs
The reason of sub- S* (↑ ↓-↓ ↑), this process is that (charge transfer excitons: spin is charge transfer state CTs
0), the spin vector of singlet exciton S* (↑ ↓-↓ ↑) electrons and holes and be zero；It is another then be CTT (spin for 1) logical
It crosses charge transfer state and forms triplet excitons (T+: ↑ ↑), (T0: ↑ ↓+↓ ↑) and (T-: ↓ ↓)], three lines of this triply degenerate
State exciton is split into 3 discrete energy states under the action of an external magnetic field, but singlet is unaffected by the magnetic field, and due to three lines
The transition (T1 → S1+hv) of state T to singlet S is " prohibiting ", so triplet excitons itself are to be unable to transition transmitting fluorescence
's.Therefore, the light emission luminance for how utilizing triplet excitons to increase El element becomes problem.
Summary of the invention
In view of the above problems, the object of the present invention is to provide a kind of electroluminescent devices, can not to solve triplet excitons
The problem of increasing El element light emission luminance.
The present invention provides a kind of electroluminescent device applied to bottom emitting type OLED, comprising: sets gradually from top to bottom
The first glass substrate, buffer layer, transparent cathode, luminescent layer, metal anode and the second glass substrate, which is characterized in that saturating
Magnetic conductive layer is formed between bright cathode and buffer layer.
In addition, preferential structure is, magnetic conductive layer is thin magnetic film made of ferrocobalt material.
The present invention also provides a kind of electroluminescent devices applied to top-emitting OLED, comprising: successively sets from top to bottom
The first glass substrate, metallic cathode, luminescent layer, transparent anode and the second glass substrate set, which is characterized in that in metallic cathode
Magnetic conductive layer is formed between the first glass substrate.
In addition, preferential structure is, magnetic conductive layer is nanometer particle film made of ferrocobalt and fluorination aluminum material.
Using the electroluminescent device of aforementioned present invention, following technical effect can be obtained:
1, for top emitting, triplet state can be made to swash by the magnetic field effect that the magnetic conductive layer formed on metallic cathode generates
Son, which flocks together, to collide, to improve the light emission luminance of El element；
2, for bottom emitting, triplet state can be made to swash by the magnetic field effect that the magnetic conductive layer formed on transparent cathode generates
Son, which flocks together, to collide, to improve the light emission luminance of El element.
Detailed description of the invention
By reference to the explanation below in conjunction with attached drawing, and with a more complete understanding of the present invention, of the invention is other
Purpose and result will be more clearly understood and understood.In the accompanying drawings:
Fig. 1 is the structure chart according to the electroluminescent device of the embodiment of the present invention one；
Fig. 2 is the structure chart according to the electroluminescent device of the embodiment of the present invention two.
Appended drawing reference therein includes: metallic cathode 1, luminescent layer 2, transparent anode 3, the first glass substrate 4, the second glass
Substrate 5, magnetic conductive layer 6, transparent cathode 1`, luminescent layer 2`, metal anode 3`, the first glass substrate 4`, the second glass substrate 5
`, magnetic conductive layer 6`, buffer layer 7`.
Specific embodiment
In the following description, for purposes of illustration, it in order to provide the comprehensive understanding to one or more embodiments, explains
Many details are stated.It may be evident, however, that these embodiments can also be realized without these specific details.
In other examples, one or more embodiments for ease of description, well known structure and equipment are shown in block form an.
In OLED product, OLED product is divided into two kinds by illumination mode and shines electroluminescent device applications provided by the invention
Structure, respectively top emitting and bottom emitting, the present invention have made improvement for two kinds of light emitting structures of top emitting and bottom emitting respectively.
Electroluminescent device provided by the invention is described in detail with two embodiments below, embodiment one is top
Emitting structural, embodiment two are bottom emitting structure.
Embodiment one
Fig. 1 shows the structure of according to embodiments of the present invention one electroluminescent device.
As shown in Figure 1, the electroluminescent device that the embodiment of the present invention one provides, comprising: the first glass substrate 4, metal yin
Pole 1, luminescent layer 2, transparent anode 3 and the second glass substrate 5 are formed between metallic cathode 1 and the first glass substrate 4 and are magnetic
Conductive layer 6, magnetic conductive layer 6 are thin magnetic film made of ferrocobalt material, pass through the modes such as vapor deposition, spin coating or sputtering
It is formed in the surface of metallic cathode 1, for making triplet excitons flock together by enhancing magnetic field effect, increases triplet state and swashs
Mutual collision between son generates additional excited singlet exciton and is shone by relaxation to achieve the purpose that enhancing shines, improved
The light emission luminance of El element.
Metallic cathode 1, luminescent layer 2, transparent anode 3, the first glass substrate 4, the second glass substrate 5 are existing structure,
Therefore it repeats no more in the present invention.
Embodiment two
Fig. 2 shows the structures of according to embodiments of the present invention two electroluminescent device.
As shown in Fig. 2, electroluminescent device provided by Embodiment 2 of the present invention, comprising: set gradually from top to bottom
One glass substrate 4`, buffer layer 7`, transparent cathode 1`, luminescent layer 2`, metal anode 3` and the second glass substrate 5`, in transparent yin
Magnetic conductive layer 6` is formed between pole 1` and buffer layer 7`, magnetic conductive layer 6` is made of ferrocobalt and fluorination aluminum material
Transparent nanometer particle film, the nanometer particle film are formed in transparent cathode 1` by modes such as vapor deposition, spin coating or sputterings
Surface, for by enhance magnetic field effect so that triplet excitons is flocked together, increase triplet excitons between mutual collision,
It generates additional excited singlet exciton to be shone by relaxation to achieve the purpose that enhancing shines, improves the luminance of El element
Degree.
Transparent cathode 1`, luminescent layer 2`, metal anode 3`, the first glass substrate 4`, the second glass substrate 5`, buffer layer 7
It is existing structure, therefore repeats no more in the present invention.
More than, only a specific embodiment of the invention, but scope of protection of the present invention is not limited thereto, and it is any to be familiar with
Those skilled in the art in the technical scope disclosed by the present invention, can easily think of the change or the replacement, and should all cover
Within protection scope of the present invention.Therefore, protection scope of the present invention should be subject to the protection scope in claims.
Claims (4)
1. a kind of electroluminescent device is applied to bottom emitting type OLED, comprising: the first glass base set gradually from top to bottom
Plate, buffer layer, transparent cathode, luminescent layer, metal anode and the second glass substrate, which is characterized in that the transparent cathode with
Magnetic conductive layer is formed between the buffer layer.
2. electroluminescent device as described in claim 1, which is characterized in that the magnetic conductive layer is ferrocobalt material system
At thin magnetic film.
3. a kind of electroluminescent device is applied to top-emitting OLED, comprising: the first glass base set gradually from top to bottom
Plate, metallic cathode, luminescent layer, transparent anode and the second glass substrate, which is characterized in that in the metallic cathode and described first
Magnetic conductive layer is formed between glass substrate.
4. electroluminescent device as claimed in claim 3, which is characterized in that the magnetic conductive layer is ferrocobalt and fluorination
Nanometer particle film made of aluminum material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910249929.0A CN109962135B (en) | 2019-03-29 | 2019-03-29 | Electroluminescent device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910249929.0A CN109962135B (en) | 2019-03-29 | 2019-03-29 | Electroluminescent device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109962135A true CN109962135A (en) | 2019-07-02 |
| CN109962135B CN109962135B (en) | 2021-08-17 |
Family
ID=67025279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910249929.0A Expired - Fee Related CN109962135B (en) | 2019-03-29 | 2019-03-29 | Electroluminescent device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109962135B (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101023149A (en) * | 2004-09-20 | 2007-08-22 | 伊斯曼柯达公司 | Organic element for electroluminescent devices |
| CN101661995A (en) * | 2009-09-29 | 2010-03-03 | 吉林大学 | Organic electroluminescent device capable of forming spin-polarized injection |
| CN102983280A (en) * | 2011-09-07 | 2013-03-20 | 海洋王照明科技股份有限公司 | Organic electroluminescence device and preparation method thereof |
| KR101647309B1 (en) * | 2015-02-25 | 2016-08-10 | 광주과학기술원 | Organic light emitting diode and method of manufacturing the same |
| CN106057860A (en) * | 2016-08-08 | 2016-10-26 | 深圳市华星光电技术有限公司 | OLED display apparatus and manufacturing method thereof |
| CN107403829A (en) * | 2017-08-07 | 2017-11-28 | 京东方科技集团股份有限公司 | Display unit and preparation method thereof, display panel |
| US20180248144A1 (en) * | 2015-08-18 | 2018-08-30 | Wake Forest University | Frequency dependent light emitting devices |
| CN109411616A (en) * | 2018-11-02 | 2019-03-01 | 京东方科技集团股份有限公司 | Display panel and display device |
| CN109461847A (en) * | 2018-10-31 | 2019-03-12 | 京东方科技集团股份有限公司 | Organic Light Emitting Diode and preparation method thereof, oled device |
-
2019
- 2019-03-29 CN CN201910249929.0A patent/CN109962135B/en not_active Expired - Fee Related
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101023149A (en) * | 2004-09-20 | 2007-08-22 | 伊斯曼柯达公司 | Organic element for electroluminescent devices |
| CN101661995A (en) * | 2009-09-29 | 2010-03-03 | 吉林大学 | Organic electroluminescent device capable of forming spin-polarized injection |
| CN102983280A (en) * | 2011-09-07 | 2013-03-20 | 海洋王照明科技股份有限公司 | Organic electroluminescence device and preparation method thereof |
| KR101647309B1 (en) * | 2015-02-25 | 2016-08-10 | 광주과학기술원 | Organic light emitting diode and method of manufacturing the same |
| US20180248144A1 (en) * | 2015-08-18 | 2018-08-30 | Wake Forest University | Frequency dependent light emitting devices |
| CN106057860A (en) * | 2016-08-08 | 2016-10-26 | 深圳市华星光电技术有限公司 | OLED display apparatus and manufacturing method thereof |
| CN107403829A (en) * | 2017-08-07 | 2017-11-28 | 京东方科技集团股份有限公司 | Display unit and preparation method thereof, display panel |
| CN109461847A (en) * | 2018-10-31 | 2019-03-12 | 京东方科技集团股份有限公司 | Organic Light Emitting Diode and preparation method thereof, oled device |
| CN109411616A (en) * | 2018-11-02 | 2019-03-01 | 京东方科技集团股份有限公司 | Display panel and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109962135B (en) | 2021-08-17 |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20210817 |
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