CN107768420A - A kind of display device - Google Patents

A kind of display device Download PDF

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Publication number
CN107768420A
CN107768420A CN201711215751.5A CN201711215751A CN107768420A CN 107768420 A CN107768420 A CN 107768420A CN 201711215751 A CN201711215751 A CN 201711215751A CN 107768420 A CN107768420 A CN 107768420A
Authority
CN
China
Prior art keywords
layer
light
luminescent
display device
array substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN201711215751.5A
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Chinese (zh)
Inventor
罗艳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sichuan Jiuding Zhiyuan Intellectual Property Operation Co Ltd
Original Assignee
Sichuan Jiuding Zhiyuan Intellectual Property Operation Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sichuan Jiuding Zhiyuan Intellectual Property Operation Co Ltd filed Critical Sichuan Jiuding Zhiyuan Intellectual Property Operation Co Ltd
Priority to CN201711215751.5A priority Critical patent/CN107768420A/en
Publication of CN107768420A publication Critical patent/CN107768420A/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements

Abstract

The invention discloses a kind of display device.It includes tft array substrate, sealing plate and luminescent device, luminescent device is sealed on tft array substrate by sealing plate, luminescent device includes the silicon carbide substrates stacked gradually, light passes through layer, cathode layer, photosensitive resin layer, organic layer, anode layer and electrically conducting transparent based superhydrophobic thin films, organic layer is included in separation layer of the matrix distribution on photosensitive resin layer and the luminescent layer being arranged between multiple separation layers, luminescent layer includes the first phosphor layer stacked gradually, first wall, blue-light fluorescent material layer, second wall and the second phosphor layer, light includes light spacer region by floor and light passes through area, light spacer region is in matrix distribution silicon carbide substrates, light is formed between light spacer region by area, light is corresponding with the position of luminescent layer by area.The present invention can make luminescent device have good electric conductivity, the transparency and water resistance.

Description

A kind of display device
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of display device.
Background technology
Organic Light Emitting Diode (OLED) is due to having the advantages that self-luminous, reaction is fast, visual angle is wide, brightness is high, frivolous, because This is had an optimistic view of extensively using the market prospects of the display panel of its making.
At present, top emission type display panel requires higher to the top electrodes of Organic Light Emitting Diode, both needs it to possess Good electric conductivity, need to meet the good transparency again.More conventional top transparent electrode is relatively thin (10-20nm) at present Metallic film or conducting metal oxide (such as ITO) film.Metallic film is thinner, and translucency is better, but electric conductivity can be relative Reduce, it is therefore desirable to its electric conductivity and the transparency are balanced, are still unable to reach ideal effect at present.And ito thin film is conductive Property it is relatively limited, when especially making broad area device, the voltage drop that ITO self-resistance is formed can cause display brightness uneven There are various vestiges in even, display picture, so as to influence display effect.In addition, prepared by ito thin film generally use sputtering technology, splash Certain damage can be caused to lower floor by penetrating technique.Further, since OLED is more sensitive to water, oxygen, it is desirable to which top electrodes need to have Certain water resistance, and require that Organic Light Emitting Diode needs strict encapsulation.Therefore, prior art has much room for improvement and further sent out Exhibition.
The content of the invention
The present invention solves the technical problem of a kind of display device is provided, it can make luminescent device that there is good lead Electrically, the transparency and water resistance.
In order to solve the above technical problems, one aspect of the present invention is：A kind of display device is provided, including Tft array substrate, sealing plate and luminescent device, the sealing plate are arranged on the tft array substrate, with the tft array Substrate forms confined space, and the luminescent device is arranged on the tft array substrate in the confined space, the luminescent device Surpassed including the silicon carbide substrates that stack gradually, light by layer, cathode layer, photosensitive resin layer, organic layer, anode layer and electrically conducting transparent Hydrophobic film, the organic layer include in separation layer of the matrix distribution on the photosensitive resin layer and are arranged on the multiple Luminescent layer between separation layer, depression forms curved surface downwards on the surface of the luminescent layer, and the luminescent layer includes what is stacked gradually First phosphor layer, the first wall, blue-light fluorescent material layer, the second wall and the second phosphor layer, the light lead to Crossing floor includes light spacer region and light by area, and the smooth spacer region is in that the light passes through described in matrix distribution in silicon carbide substrates Area is formed between the smooth spacer region, and the material of the smooth spacer region is shadow shield, and the light is leaded light by the material in area Plate, the light are corresponding with the position of the luminescent layer by area.
Preferably, the thickness of the blue-light fluorescent material layer is 30nm.
Preferably, the light color that first phosphor layer and the second phosphor layer are sent is identical.
Preferably, the cross sectional shape of the separation layer is isosceles trapezoid.
Preferably, the electrically conducting transparent based superhydrophobic thin films are combined by conductive carbon nanotube and hydrophobic resin, wherein, institute The component for stating conductive carbon nanotube is 25%.
Preferably, the thickness of the electrically conducting transparent based superhydrophobic thin films is 80nm.
Preferably, the sealing plate includes closure and sealing frame, and the sealing frame is arranged at the tft array substrate Edge, the closure and the upper surface of the sealing frame are tightly connected.
The beneficial effects of the invention are as follows：The situation of prior art is different from, the present invention is set on the anode layer of luminescent device Put electrically conducting transparent based superhydrophobic thin films.Can be on the premise of anode layer electric conductivity be ensured, the appropriate thickness for reducing anode layer, and then The translucency of whole anode layer is improved, and electrically conducting transparent based superhydrophobic thin films have super-hydrophobicity, can effectively prevent outside Moisture penetrates into luminescent device, in addition, the through hole by setting insertion on the anode layer, can cause the light being emitted by luminescent layer Major part is able to be directly transmitted to electrically conducting transparent based superhydrophobic thin films by through hole, further increases translucency, and luminous Set in layer by setting the first wall and the second wall, carrier is limited in blue-light fluorescent material layer, that is, swash Sub- recombination region is limited to blue phosphor luminescent layer, so that the shorter fluorescence exciton of diffusion length is by blue-light fluorescent material Layer utilizes, and the longer phosphorescence exciton of diffusion length can be used by two layers of phosphor layer, realize exciton in each luminescent layer Isolation distribution, while light is divided into light spacer region and light according to the difference of function by floor area is passed through by area, wherein light Effect be adjust each pixel light emission of Organic Light Emitting Diode briliancy, and the effect of light spacer region be avoid passing through do not share the same light it is logical The light for crossing area influences each other, by the above-mentioned means, so as to make luminescent device have good electric conductivity, the transparency and water-fast Property.
Brief description of the drawings
Fig. 1 is the structural representation of display device provided in an embodiment of the present invention.
Fig. 2 is the structural representation of the luminescent device of display device provided in an embodiment of the present invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete Site preparation describes, it is clear that described embodiment is only the part of the embodiment of the present invention, rather than whole embodiments.It is based on Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made Embodiment, belong to the scope of protection of the invention.
Refering to Fig. 1 and Fig. 2, the display device of the embodiment of the present invention includes tft array substrate 1, sealing plate 2 and lighted Device 3, sealing plate 2 are arranged on tft array substrate 1, form confined space 11 with tft array substrate 1, luminescent device 3 is set In on the tft array substrate 1 in confined space 11.There is the tft array for being used for driving luminescent device 3 on tft array substrate 1, The embodiment of the present invention can use the conventional tft array substrate in this area.
Specifically, luminescent device 3 includes the silicon carbide substrates 31 that stack gradually, light passes through layer 32, cathode layer 33, photosensitive tree Lipid layer 34, organic layer 35, anode layer 36 and electrically conducting transparent based superhydrophobic thin films 37.
Organic layer 35 includes in separation layer 351 of the matrix distribution on photosensitive resin layer 34 and is arranged on multiple separation layers Luminescent layer 352 between 351, the cross sectional shape of separation layer 351 are preferably isosceles trapezoid, and the surface of luminescent layer 352 is to lower recess Curved surface is formed, curved surface can increase emergent light angle scope.
Because electrically conducting transparent based superhydrophobic thin films 37 have good electric conductivity and super-hydrophobicity, so as to ensure anode On the premise of 36 electric conductivity of layer, the appropriate thickness for reducing anode layer 36, and then improve the translucency of whole anode layer 36.In this reality To apply in example, electrically conducting transparent based superhydrophobic thin films 37 are combined by conductive carbon nanotube and hydrophobic resin, wherein, conductive carbon nanotube Component be 25%.Conductive carbon nanotube can provide good electric conductivity, and hydrophobic resin provides super-hydrophobicity.Further, The thickness of electrically conducting transparent based superhydrophobic thin films 37 is 80nm.
In the present embodiment, electronics injects from cathode layer 33, and hole is injected from anode layer 36, is formed and swashed in luminescent layer 352 Son simultaneously excites the material emission of luminescent layer 352, and the light excited from luminescent layer 352 passes through anode layer 36, then super thin from electrically conducting transparent Water film 37 is emitted.Because anode layer 36 has through hole 361, the wide part that can be emitted by luminescent layer 352 is able to Electrically conducting transparent based superhydrophobic thin films 37 are directly transmitted to by through hole 361, thus translucency can be further increased.
Cathode layer 33 in the present embodiment can be made of nitride material, and anode layer 36 uses transparent electrode material (being, for example, tin indium oxide) is made.
For luminescent layer 352 as organic electroluminescent source, luminescent layer 352 includes the first phosphor layer stacked gradually 3521st, the first wall 3522, blue-light fluorescent material layer 3523, the second wall 3524 and the second phosphor layer 3525, its In, the first wall 3522 can allow for electronics by, prevent hole by the way that the second wall 3524 can allow for hole to lead to Cross, prevent electronics from passing through.The thickness of blue-light fluorescent material layer 3523 is preferably 30nm.In the present embodiment, the first phosphor material The light color that layer 3521 and the second phosphor layer 3525 are sent is identical.
Light includes light spacer region 321 and light by floor 32 and served as a contrast by area 322, light spacer region 321 in matrix distribution carborundum On bottom 31, between light is formed at light spacer region 321 by area 322, the material of light spacer region 321 is shadow shield, and light passes through area 322 Material be light guide plate, light is corresponding with the position of luminescent layer 352 by area 322.
For the luminescent device of the present embodiment when applying electric current, anode layer 36 injects hole, and cathode layer 33 to luminescent layer 352 Electronics is injected to luminescent layer 352.Injected holes and electronics are each towards the electrode transfer of oppositely charged.When electronics and hole Localization on the same molecule when, formed exciton, that is, the electron-hole pair with the localization for exciting energy state.Exciton is from excitation state Return to the process of ground state can be produced by radiation transistion it is luminous.When electronics and hole are met, in the exciton that they are compounded to form, 25% is singlet state, and 75% is triplet.Excited singlet state radiation transistion lights as fluorescence, excited triplet state radiation to ground state It is the transition that Spin multiplicity changes to transit to lighting as phosphorescence, phosphorescence processes for ground state, have received the restriction of spin factor, because This, its transfer rate is much smaller compared with fluorescence process, and correspondingly, triplet exciton lasts a long time, and can pass through farther out Distance.And blue-light fluorescent material layer 3523 is only capable of the exciton attenuation transmitting fluorescence by singlet state, meanwhile, the first phosphorescence material The phosphor layer 3525 of the bed of material 3521 and second can launch phosphorescence by the attenuation of triplet exciton.From anode layer 36 Injected holes is stopped by the first wall 3522 after reaching blue-light fluorescent material layer 3523 and can not continue to move to cathode layer 33 It is dynamic, meanwhile, from the injected electrons of cathode layer 33 reach blue-light fluorescent material layer 3523 after by the second wall 3524 stop so as to It can not continue to move to anode layer 36, thus, electronics and hole are limited in blue-light fluorescent material layer 3523 and are combined, That is, exciton recombination region is limited in blue-light fluorescent material layer 3523.So as to which most exciton is in blue-light fluorescent material layer Produced in 3523, fluorescence exciton (singlet excitons) can not cross the first wall 3522 or the second wall due to short life 3524 reach the first phosphor layer 3521 or the second phosphor layer 3525, can only be glimmering in blue-light fluorescent material layer 3523 Luminescent material utilizes.And phosphorescence exciton (triplet exciton), due to lasting a long time, diffusion length farther out, can cross the first wall 3522 or second wall 3524 utilized by the phosphor material of the first phosphor layer 3521 or the second phosphor layer 3525. Thus, singlet excitons and triplet exciton, which can obtain, compared with good utilisation, improves luminous efficiency and stability.
In order to facilitate assembling, as shown in figure 1, in the present embodiment, sealing plate 2 includes closure 21 and sealing frame 22, close Envelope frame 22 is arranged at the edge of tft array substrate 1, and closure 21 and the upper surface of sealing frame 22 are tightly connected.Closure 21 selects It is made of transparent material.
By the above-mentioned means, the display device of the embodiment of the present invention on the anode layer of luminescent device by setting transparent lead Electric based superhydrophobic thin films.Can be on the premise of anode layer electric conductivity be ensured, the appropriate thickness for reducing anode layer, and then improve whole The translucency of anode layer, and electrically conducting transparent based superhydrophobic thin films have super-hydrophobicity, effectively can prevent outside moisture from penetrating into Luminescent device, in addition, the through hole by setting insertion on the anode layer, the wide part that can be emitted by luminescent layer obtains To be directly transmitted to electrically conducting transparent based superhydrophobic thin films by through hole, translucency is further increased, and set in luminescent layer By setting the first wall and the second wall, carrier is set to be limited in blue-light fluorescent material layer, i.e. exciton recombination zone Domain is limited to blue phosphor luminescent layer, so that the shorter fluorescence exciton of diffusion length is utilized by blue-light fluorescent material layer, And the longer phosphorescence exciton of diffusion length can be used by two layers of phosphor layer, isolation of the exciton in each luminescent layer point is realized Match somebody with somebody, while light is divided into light spacer region and light by area by floor according to the difference of function, the effect that wherein light passes through area is to adjust The briliancy of each pixel light emission of Organic Light Emitting Diode is saved, and the effect of light spacer region is to avoid passing through the light do not shared the same light by area Influence each other, by the above-mentioned means, so as to make luminescent device that there is good electric conductivity, the transparency and water resistance.
Embodiments of the invention are the foregoing is only, are not intended to limit the scope of the invention, it is every to utilize this hair The equivalent structure or equivalent flow conversion that bright specification and accompanying drawing content are made, or directly or indirectly it is used in other related skills Art field, is included within the scope of the present invention.

Claims (7)

1. a kind of display device, it is characterised in that including tft array substrate, sealing plate and luminescent device, the sealing plate is set In on the tft array substrate, confined space is formed with the tft array substrate, the luminescent device is arranged at described closed On tft array substrate in space, the luminescent device includes the silicon carbide substrates that stack gradually, light passes through layer, cathode layer, sense Photopolymer resin layer, organic layer, anode layer and electrically conducting transparent based superhydrophobic thin films, the organic layer are included in matrix distribution described photosensitive Separation layer on resin bed and the luminescent layer being arranged between the multiple separation layer, the surface of the luminescent layer is to lower recess Form curved surface, the first phosphor layer that the luminescent layer includes stacking gradually, the first wall, blue-light fluorescent material layer, the Two walls and the second phosphor layer, the light include light spacer region and light by area by floor, and the smooth spacer region is in square Battle array is distributed in the silicon carbide substrates, between the light is formed at the smooth spacer region by area, the material of the smooth spacer region For shadow shield, the material that the light passes through area is light guide plate, and the light is corresponding with the position of the luminescent layer by area.
2. display device according to claim 1, it is characterised in that the thickness of the blue-light fluorescent material layer is 30nm.
3. display device according to claim 1, it is characterised in that first phosphor layer and the second phosphor material The light color that layer is sent is identical.
4. display device according to claim 1, it is characterised in that the cross sectional shape of the separation layer is isosceles trapezoid.
5. display device according to claim 1, it is characterised in that the electrically conducting transparent based superhydrophobic thin films are received by conductive carbon Mitron and hydrophobic resin are combined, wherein, the component of the conductive carbon nanotube is 25%.
6. display device according to claim 8, it is characterised in that the thickness of the electrically conducting transparent based superhydrophobic thin films is 80nm。
7. display device according to claim 1, it is characterised in that the sealing plate includes closure and sealing frame, institute The edge that sealing frame is arranged at the tft array substrate is stated, the closure and the upper surface of the sealing frame are tightly connected.
CN201711215751.5A 2017-11-28 2017-11-28 A kind of display device Withdrawn CN107768420A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201711215751.5A CN107768420A (en) 2017-11-28 2017-11-28 A kind of display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201711215751.5A CN107768420A (en) 2017-11-28 2017-11-28 A kind of display device

Publications (1)

Publication Number Publication Date
CN107768420A true CN107768420A (en) 2018-03-06

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CN201711215751.5A Withdrawn CN107768420A (en) 2017-11-28 2017-11-28 A kind of display device

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109873019A (en) * 2019-03-07 2019-06-11 京东方科技集团股份有限公司 A kind of electroluminescent device and preparation method thereof, display panel, display device
CN110265433A (en) * 2019-05-07 2019-09-20 信利半导体有限公司 A kind of segmentation oled display substrate and display module

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109873019A (en) * 2019-03-07 2019-06-11 京东方科技集团股份有限公司 A kind of electroluminescent device and preparation method thereof, display panel, display device
CN109873019B (en) * 2019-03-07 2021-01-29 京东方科技集团股份有限公司 Electroluminescent device, manufacturing method thereof, display panel and display device
CN110265433A (en) * 2019-05-07 2019-09-20 信利半导体有限公司 A kind of segmentation oled display substrate and display module

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Application publication date: 20180306