CN109946261A - Adjustable THz wave detection device of absorbing wavelength and preparation method thereof - Google Patents
Adjustable THz wave detection device of absorbing wavelength and preparation method thereof Download PDFInfo
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Abstract
The invention discloses adjustable THz wave detection devices of a kind of absorbing wavelength and preparation method thereof, and preparation method includes: offer substrate, and production forms supporting layer over the substrate；Production forms heat-sensitive layer on the supporting layer；Production forms conductive layer on the supporting layer and the heat-sensitive layer；Production forms absorbed layer on the heat-sensitive layer；Light hole is made on the surface backwards to the absorbed layer of the substrate；Pedestal and moving reflector are provided, the moving reflector is installed on the pedestal；The pedestal is fixedly connected with the substrate, so that the reflecting surface parallel alignment of the absorbed layer and the moving reflector.Preparation method disclosed by the invention, simple process separates the moving reflector of detector and tuning wavelength, and the investigative range of detection device may make to cover entire terahertz wave band, detectivity is helped to improve with stylish thin-film technique, reduces thermal responsive time constant.
Description
Technical field
The present invention relates to THz wave field of detecting more particularly to a kind of adjustable THz wave detection devices of absorbing wavelength
And preparation method thereof.
Background technique
Non-brake method microbolometer originates from the last century 80's Mo, is for 8 at the beginning of the design of the type detector
~14 μm of far infrared band detections, detect mechanism according to its heat radiation, can theoretically detect and cover near-infrared to millimeter wave model
The heat radiation light enclosed.By nearly development in 30 years, the non-brake method microbolometer based on vanadium oxide thermal resistance sensitive thin film is being visited
It makes much progress in terms of survey rate, can achieve 109Cm ﹒ Hz1/2/ w, this common than THz wave wave field of detecting deuterated L-
The high an order of magnitude of alanine triglycine sulfate (DLATGS) pyroelectric detector, but than refrigeration mode detector (liquid helium refrigeration
Superconductor detector) low at least an order of magnitude, current non-brake method microbolometer is limited to structure and material and has not been reached yet
Ambient noise detection limit at room temperature, there are also certain rooms for improvement.
Currently, most THz wave wave field of detecting use pyroelectric detector, detection wave-length coverage compares
Greatly, the slightly lower defect of detector rate can be made up using high power light source, but for faint and gradual terahertz wave signal, it is non-
Refrigeration microbolometer has more advantage, and regrettably single non-brake method microbolometer absorbs THz wave wave range too
Narrow, wavelength absorption range is determined by hanging thermosensitive film bridge floor and bottom mirror distance, if it is desired to detection is interested
THz wave wave band needs to change spacing, it is necessary to custom-made detector.
In order to realize that wide range THz wave wave detects, the patent of invention of patent No. US7968846B2 proposes a kind of absorption
The non-brake method microbolometer of Wavelength tunable, the adjustable non-brake method micrometering of THz wave absorbing wavelength which proposes
Bolometer passes through voltage using the electrostatic attraction between thermosensitive film conducting bridge leg and THz wave wave resonance enhancing reflecting mirror
It adjusts thermosensitive film and absorbs the distance between bridge floor and reflecting mirror, but due to bridge leg area very little, the electrostatic force provided is limited,
Outside plus under 100V voltage conditions, spacing variation is no more than 2 μm, and absorbent core wave-length coverage is no more than 8 μm, far can not cover
Entire THz wave wave band (0.1~10THz).In addition, original design and processes are still used, especially in production resonant cavity
When, continue to continue to use polyimide sacrificial layer structure, since the layer is not amenable to 300 DEG C or more high temperature, therefore its topmost thin film, including
Silicon nitride and vanadium oxide film cannot use high temperature coating process, this is to thinned silicon nitride support layer (reducing thermal response time)
With reduction vanadium oxide thermal resistance sensitivity layer defects (reducing 1/f low-frequency noise) without any help.Furthermore it is thin to adjust temperature-sensitive by voltage
Film absorbs the distance between bridge floor and reflecting mirror, this will lead to bridge leg and deforms, and causes integrated deck impedance fluctuations, generates electricity
Flow noise.
Summary of the invention
In view of the shortcomings of the prior art, the present invention provides a kind of simple absorbing wavelength of preparation process is adjustable too
The preparation method of Hertz wave detection device, and detection device obtained can be realized and carry out big model to the absorbing wavelength of THz wave
Enclose tuning.
In order to achieve the above purpose, present invention employs the following technical solutions:
A kind of preparation method of the adjustable THz wave detection device of absorbing wavelength, comprising:
Substrate is provided, production forms supporting layer over the substrate；
Production forms heat-sensitive layer on the supporting layer；
Production forms conductive layer on the supporting layer and the heat-sensitive layer；
Production forms absorbed layer on the heat-sensitive layer；
Light hole is made on the surface backwards to the absorbed layer of the substrate；
The pedestal of moving reflector is fixedly connected with the substrate, so that the absorbed layer and the moving reflector
Reflecting surface alignment.
Preferably, it makes and is formed after the heat-sensitive layer on the supporting layer, the preparation method further includes to described
The two side portions of heat-sensitive layer perform etching.
Preferably, after production forms the conductive layer on the supporting layer and the heat-sensitive layer, the preparation method
It further include being performed etching to the part conductive layer on the heat-sensitive layer, so that heat-sensitive layer exposure.
Preferably, after production forms the conductive layer on the supporting layer and the heat-sensitive layer, the preparation method
It further include making to form insulating layer on the conductive layer and the heat-sensitive layer.
Preferably, after production forms insulating layer on the conductive layer and the heat-sensitive layer, the preparation method is also wrapped
The partial region for including the insulating layer to the heat-sensitive layer two sides, the conductive layer and the supporting layer performs etching, with
The insulating layer, the conductive layer and the supporting layer form multiple continuous strip holes.
Preferably, the pedestal is fixedly connected with the substrate, so that the absorbed layer and the moving reflector
Reflecting surface alignment method particularly includes: production forms multiple stickup columns, and the multiple both ends for pasting column are pasted on institute respectively
State pedestal and the substrate.
Preferably, it is made over the substrate of low pressure gas phase deposition technique and forms the supporting layer, the supporting layer
For silicon nitride layer, the thickness range of the supporting layer is 20~30nm.
Preferably, it is made on the supporting layer of magnetron sputtering technique and forms the heat-sensitive layer, the heat-sensitive layer is
Vanadium oxide layer, the heat-sensitive layer with a thickness of 5~10nm.
Preferably, it makes to form the suction using the part of magnetron sputtering technique heat-sensitive layer described in the insulating layer face
Receive layer, the absorbed layer be nickel-chrome alloy layer, the absorbed layer with a thickness of 5nm.
Invention additionally discloses a kind of adjustable THz wave detection device of absorbing wavelength, including pedestal, moving reflector and
Detector；
The detector includes substrate, the supporting layer on the substrate, the heat-sensitive layer on the supporting layer, sets
In the absorbed layer on the heat-sensitive layer and set on the heat-sensitive layer two sides and the conductive layer that is electrically connected with the heat-sensitive layer；
The pedestal is oppositely arranged with the detector, and the moving reflector is set to the pedestal, and described movable anti-
Reflecting surface and the absorbed layer for penetrating mirror are opposite, and the moving reflector is used for along living on the direction perpendicular to the reflecting surface
It is dynamic；The substrate is equipped with the light hole for exposing the absorbed layer and the moving reflector.
The embodiment of the invention discloses a kind of adjustable THz wave detection device preparation method of absorbing wavelength, technique letters
It is single, the moving reflector of detector and tuning wavelength is separated, the investigative range of detection device may make to cover entire terahertz
Hereby wave band helps to improve detectivity with stylish thin-film technique, reduces thermal responsive time constant.
Detailed description of the invention
Figure 1A to 1I is the detection device preparation technology flow chart of the embodiment of the present invention.
Fig. 2 is the detector schematic diagram of the embodiment of the present invention.
Fig. 3 is the detection device schematic diagram of the embodiment of the present invention.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, it is detected below in conjunction with attached drawing and single-point
Device embodiment, the present invention is described in more detail.It should be appreciated that specific embodiment described herein is only used to explain this
Invention, structure and production method are equally applicable to linear array detector, are not intended to limit the present invention.
Figure 1A to Fig. 1 H shows the preparation method of the adjustable THz wave detection device of absorbing wavelength of the present embodiment
Processing step；
Step 1, as shown in Figure 1A, substrate 31 is provided, on substrate 31 production form supporting layer 32.
Specifically, super flat twin polishing monocrystalline silicon piece is selected to be used as substrate 31, the thickness uniformity of substrate 31 is no more than
200nm.Under about 800 DEG C of temperature environment, grown on substrate 31 using low pressure gas phase deposition method a layer thickness be 20~
The silicon nitride film of the high elastic modulus of 30nm forms supporting layer 32.
Step 2, as shown in Figure 1B, on supporting layer 32 production form heat-sensitive layer 33.
Specifically, the making material of heat-sensitive layer 33 is preferably in the vanadium oxide with good thermoelectricity capability.Further, excellent
Choosing deposits the oxygen of 5~10nm of a layer thickness on 32 surface of supporting layer under about 500 DEG C of hot conditions using magnetron sputtering technique
Change vanadium thermosensitive film.
Step 3, as shown in Figure 1 C, it is preferred to use lithographic etch process uses chlorine reaction ion etching vanadium oxide temperature-sensitive
The part of film two sides, so that 33 reservation middle sections of heat-sensitive layer.It certainly in other implementations, can be directly on supporting layer 30
Heat-sensitive layer 33 as shown in Figure 1 C is made, does not need to perform etching heat-sensitive layer 33.
Step 4, as shown in figure iD, production forms conductive layer 35 on supporting layer 32 and heat-sensitive layer 33.
Specifically, the material of conductive layer 35 preferably uses nichrome material.Further, using sputtering technology, in heat
The nickel-chrome alloy layer that a layer thickness is 10nm is grown in photosensitive layer 33 and supporting layer 32, to form covering heat-sensitive layer 33 and supporting layer 32
Conductive layer 35, conductive layer 35 is for exporting the electric signal of heat-sensitive layer 33 to external circuitry.
Step 5, as referring to figure 1E, is located at the part of nickel on heat-sensitive layer 33 using chlorine/sulfur hexafluoride reactive ion etching
Chromium alloy layer forms the conductive layer 35 for being located at 33 two sides of heat-sensitive layer.In this way can to avoid subsequent production absorbed layer 34 with
Conductive layer 35 is in electrical contact.
Further, conductive layer 35 includes the main part 35a for fitting in supporting layer 32, the close temperature-sensitive of main body 35a
One end the first conductive part 35b being bent to form of layer 33 and the second conductive part being bent to form from one end of the first conductive part 35b
35c, the first conductive part 35b fit in the side wall of heat-sensitive layer 33, and the second conductive part 35c fits in the supporting layer backwards of heat-sensitive layer 33
On 32 surface, it can guarantee the steady contact between conductive layer 35 and heat-sensitive layer 33 in this way, improve the conductive stability of the two.
Step 6, as shown in fig. 1F, production forms insulating layer 36 on conductive layer 35 and heat-sensitive layer 33.
Specifically, forming a layer thickness on conductive layer 35 and heat-sensitive layer 33 using low temperature chemical vapor deposition is 10nm's
Compact silicon nitride insulating layer can further avoid absorbed layer 34 and conductive layer 35 from contacting conduction.
Step 7, as shown in fig. 1F, production forms absorbed layer 34 on insulating layer 36.
As a preferred embodiment, using sputtering technology, the nichrome that a layer thickness is 5nm is grown on insulating layer 36
Layer is located at the portion of 33 two sides of heat-sensitive layer using chlorine/sulfur hexafluoride reactive ion etching process etching by lithographic etch process
Divide nickel-chrome alloy layer, so that nickel-chrome alloy layer only retains and the part of 33 face of heat-sensitive layer, formation absorbed layer 34.
Step 8, as shown in Figure 1 G, on insulating layer 36, conductive layer 35 and supporting layer 32 production form multiple continuous length
Hole.
Specifically, using chlorine/sulfur hexafluoride dry etch process, to the insulating layer 36 and conductive layer of 33 two sides of heat-sensitive layer
35 partial regions perform etching, and are then performed etching using hot phosphoric acid wet etching to the corresponding region of supporting layer 32, exhausted
The strip hole 37 at multiple intervals is formed on edge layer 36, conductive layer 35 and supporting layer 32.As a preferred embodiment, multiple strip holes 37
It is arranged alternately, so that the insulation leg structure for forming the S type multicycle of insulating layer 36, conductive layer 35 and supporting layer 32, extends in this way
Heat-sensitive layer 33 and absorbed layer 34 will reduce heat-sensitive layer 33 and absorbed layer 34 to the calorie spread path between 31 edge of substrate
The loss of heat.In addition, the thermal conductivity parameter of detector 30 can be can adjust by the quantity and width of adjusting strip hole 37.
Step 9, such as Fig. 1 H and as shown in Fig. 2, on surface of the substrate 31 backwards to absorbed layer 34 production form light hole
31a。
Specifically, using fluorination back-etching of the xenon-133 gas dry etch process from substrate 31, until cutting through entire substrate
31, the light hole 31a of the insulation leg structure of exposure absorbed layer 34 and S type multicycle is formed, facilitates THz wave from light hole 31a
It enters in detection device.
Step 10, as shown in Fig. 1 I and Fig. 3, moving reflector 20 is provided, by the pedestal 10 and substrate of moving reflector 20
31 are fixedly connected, so that absorbed layer 34 is aligned with the reflecting surface of moving reflector 20.
As a preferred embodiment, moving reflector 20 is selected as MEMS displacement-reflection mirror, can pass through external voltage control
The stepping range of the moving distance of MEMS displacement-reflection mirror processed, MEMS displacement-reflection mirror can reach 500 μm, can
So that the investigative range of detector 30 can cover entire terahertz wave band.
Specifically, absorbed layer 34 is aligned with the reflecting surface of moving reflector 20, uses the stickup of multiple 2~4 μ m thicks
The surface and 31 surface of substrate of pedestal 10, such pedestal 10, moving reflector are pasted in column 40, multiple both ends for pasting column 40 respectively
20 and detector 30 form the adjustable THz wave detection device of absorbing wavelength.
As shown in figure 3, a kind of adjustable THz wave detection device of absorbing wavelength of the embodiment of the present invention includes movable anti-
Penetrate mirror 20 and detector 30.As shown in Fig. 2, detector 30 includes substrate 31, the supporting layer 32 on substrate 31, is set to support
Heat-sensitive layer 33 on layer 32, the absorbed layer 34 on heat-sensitive layer 33 and being set to and is electrically connected 33 two sides of heat-sensitive layer with heat-sensitive layer 33
Conductive layer 35.The pedestal 10 of moving reflector 20 is oppositely arranged with substrate 31, and moving reflector 20 is set on pedestal 10, and can
The reflecting surface and absorbed layer 34 of dynamic reflecting mirror 20 are opposite, moving reflector 20 can along movable on the direction perpendicular to reflecting surface,
Reflecting surface and absorbable layer 34 constitute resonant cavity, are offered on substrate 31 for exposing the logical of absorbed layer 34 and moving reflector 20
Unthreaded hole 31a.In this way, extraneous THz wave can enter from light hole 31a, and absorbed layer is reflexed to by moving reflector 20
34, absorbed layer 34 generates heat and by the heat transfer of generation to heat-sensitive layer 33, and the resistance of heat-sensitive layer 33 is caused to change,
Variation by detecting 33 resistance of heat-sensitive layer can measure the signal of THz wave.Additionally by moving reflector 20 is adjusted, reflect
The distance between face and absorbed layer 34, to adjust absorption of the detection device to different-waveband THz wave.
The invention discloses adjustable THz wave detection devices of a kind of absorbing wavelength and preparation method thereof, have as follows
The utility model has the advantages that
(1) moving reflector of detector and tuning wavelength separates, and makes full use of mature MEMS displacement anti-
The a wide range of step distance of mirror (reaching as high as 500 μm) is penetrated, so that the investigative range of detection device covers entire terahertz wave band
(0.1~10THz).
(2) use for abandoning polyimide sacrificial layer (classical detector production necessary step), directly in monocrystalline silicon piece
High temperature production silicon nitride and vanadium oxide film on substrate, finally realize that THz wave is visited in the way of substrate back aperture light passing
It surveys, simplifies manufacture craft, while improving detector sensitivity, reduce thermal responsive time constant.
(3) detector and tuning device separated structure are used, during tuning, detector bridge floor will not deformation occurs,
Additional noise signal will not be generated.
The above is only the specific embodiment of the application, it is noted that for the ordinary skill people of the art
For member, under the premise of not departing from the application principle, several improvements and modifications can also be made, these improvements and modifications are also answered
It is considered as the protection scope of the application.
Claims (10)
1. a kind of preparation method of the adjustable THz wave detection device of absorbing wavelength characterized by comprising
It provides substrate (31), production forms supporting layer (32) on the substrate (31)；
Production forms heat-sensitive layer (33) on the supporting layer (32)；
Production forms conductive layer on the supporting layer (32) and the heat-sensitive layer (33)；
Production forms absorbed layer (34) on the heat-sensitive layer (33)；
Light hole (31a) is made on the surface backwards to the absorbed layer (34) of the substrate (31)；
The pedestal (10) of moving reflector (20) is fixedly connected with the substrate (31) so that the absorbed layer (34) with it is described
The reflecting surface of moving reflector (20) is aligned.
2. the preparation method of the adjustable THz wave detection device of absorbing wavelength according to claim 1, in the support
It makes and is formed after the heat-sensitive layer (33) on layer (32), the preparation method further includes the both sides to the heat-sensitive layer (33)
Divide and performs etching.
3. the preparation method of the adjustable THz wave detection device of absorbing wavelength according to claim 2, which is characterized in that
After production forms the conductive layer (35) on the supporting layer (32) and the heat-sensitive layer (33), the preparation method is also wrapped
It includes and the part conductive layer (35) on the heat-sensitive layer (33) is performed etching, so that the heat-sensitive layer (33) exposure.
4. the preparation method of the adjustable THz wave detection device of absorbing wavelength according to claim 3, which is characterized in that
After production forms the conductive layer (35) on the supporting layer (32) and the heat-sensitive layer (33), the preparation method is also wrapped
It includes the production on the conductive layer (35) and the heat-sensitive layer (33) and forms insulating layer (36).
5. the preparation method of the adjustable THz wave detection device of absorbing wavelength according to claim 4, which is characterized in that
After production forms insulating layer (36) on the conductive layer (35) and the heat-sensitive layer (33), the preparation method further includes pair
The partial region of the insulating layers (36) of heat-sensitive layer (33) two sides, the conductive layer (35) and the supporting layer (32) into
Row etching, to form multiple continuous strips on the insulating layer (36), the conductive layer (35) and the supporting layer (32)
Hole (37).
6. the preparation method of the adjustable THz wave detection device of absorbing wavelength according to claim 1, which is characterized in that
The pedestal (10) is fixedly connected with the substrate (31), so that the absorbed layer (34) and the moving reflector (20)
Reflecting surface alignment method particularly includes: production forms multiple stickup columns (40), and the multiple both ends for pasting column (40) are distinguished
It is pasted on the pedestal (10) and the substrate (31).
7. the preparation method of the adjustable THz wave detection device of absorbing wavelength according to claim 1, which is characterized in that
It is made and is formed the supporting layer (32) on the substrate (31) of low pressure gas phase deposition technique, the supporting layer (32) is nitrogen
SiClx layer, the thickness range of the supporting layer (32) are 20~30nm.
8. the preparation method of the adjustable THz wave detection device of absorbing wavelength according to claim 1, which is characterized in that
It is made and is formed the heat-sensitive layer (33) on the supporting layer (32) of magnetron sputtering technique, the heat-sensitive layer (33) is oxidation
Vanadium layers, the heat-sensitive layer (33) with a thickness of 5~10nm.
9. the preparation method of the adjustable THz wave detection device of absorbing wavelength according to claim 1, which is characterized in that
It makes to form the absorbed layer using the part of magnetron sputtering technique heat-sensitive layer (33) described in the insulating layer (36) face
(34), the absorbed layer (34) be nickel-chrome alloy layer, the absorbed layer (34) with a thickness of 5nm.
10. a kind of adjustable THz wave detection device of absorbing wavelength, which is characterized in that including moving reflector (20) and detection
Device (30)；
The detector (30) includes substrate (31), the supporting layer (32) being set on the substrate (31), is set to the supporting layer
(32) heat-sensitive layer (33) on, the absorbed layer (34) being set on the heat-sensitive layer (33) and be set to the heat-sensitive layer (33) two sides and
The conductive layer (35) being electrically connected with the heat-sensitive layer (33)；
The pedestal (10) of the moving reflector (20) is oppositely arranged with the detector (30), and the moving reflector (20)
Reflecting surface and the absorbed layer (34) in opposite directions, the moving reflector (20) be used for along the direction perpendicular to the reflecting surface
Upper activity；The substrate (31) is equipped with the light hole for exposing the absorbed layer (34) and the moving reflector (20)
(31a)。
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