CN109904579B - Gap coupling directional coupler based on integrated substrate gap waveguide - Google Patents
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Abstract
The invention discloses a slot coupling directional coupler based on an integrated substrate gap waveguide, which comprises two ISGW coupling waveguides with the same structure, wherein the coupling waveguides comprise a via layer dielectric plate and a gap layer dielectric plate. One surface of the dielectric plate of the via hole layer is printed with a metal stratum, the other surface of the dielectric plate of the via hole layer is printed with a periodic circular metal patch and a coupling microstrip line, and metal via holes are punched on the circular metal patch and the coupling microstrip line; one surface of the gap layer dielectric plate is printed with a coupling microstrip line, and the other surface is printed with a metal stratum with a coupling gap; the upper surface of a gap layer dielectric plate is tightly connected with the lower surface of a via layer dielectric plate to form a coupling waveguide; the two coupling waveguides are tightly connected after being rotated 180 degrees relatively. The invention can overcome the defects of the existing coupler, realize wide bandwidth and higher isolation, and has the advantages of easy integration, small size, adjustable coupling coefficient, wide bandwidth, higher isolation, suitability for 5G frequency bands and the like.
Description
Technical Field
The invention relates to the technical field of antennas, in particular to a slot coupling directional coupler based on an integrated substrate gap waveguide.
Background
The directional coupler is an important microwave millimeter wave device and can be used for signal isolation, separation and mixing, such as power monitoring, source output power amplitude stabilization, signal source isolation, transmission, reflection sweep frequency test and the like. The coupler mainly comprises a metal waveguide coupler and a microstrip coupler. With the development of 5G communication systems, the frequency requirement on microwave millimeter wave equipment is higher, however, the traditional metal waveguide coupler structure is not easy to integrate, and the microstrip coupler has larger loss when being applied to high frequency, so that the application of the microstrip coupler in high frequency is limited.
The substrate integrated waveguide (Substrate Integrated Waveguide, SIW) can better solve the problem that the metal waveguide coupler and the microstrip coupler are applied to high frequency, the substrate integrated waveguide realizes the field propagation mode of the waveguide in the dielectric plate by utilizing the metal via hole, and combines the advantages of the traditional waveguide and the microstrip transmission line, thereby being a high-performance microwave millimeter wave plane circuit. However, as the frequency increases, the performance of the substrate integrated waveguide also decreases.
In 2009, a Waveguide structure more suitable for high frequency, that is, gap Waveguide (GW), was proposed. The gap waveguide comprises a two-layer structure: the PEC layer and the PEC/PMC layer, the two layers being separated by an air gap of less than 1/4 wavelength. In the PEC/PMC layer, a high impedance EBG (Electromagnetic Band Gap, electromagnetic field band gap) structure surrounds the metal ridge along which quasi-TEM modes can propagate. The main advantage of the gap waveguide over other waveguides is low loss, no electrical connection is required, and good metallic shielding is achieved.
Currently, various types of couplers are designed based on SIW structures and Gap Waveguide (GW) structures. The SIW-based coupling formats are mainly: 1. two SIWs are parallel and are coupled through holes; 2. the two couplers are arranged on the single-layer dielectric plate in a crossing way; 3. two SIWs are arranged up and down in a crossed or overlapped mode and are coupled through a gap; 4. two SIWs are arranged in parallel and are designed in a transmission line coupling mode; 5. the two SIWs are placed vertically and coupled by a slot. There are two main types of gap waveguide based coupler designs: one is a waveguide coupler based on the theory of hole coupling, and the other is to design the coupler in the form of a conductive ridge in a gap waveguide. However, SIW-based couplers still suffer from the problems of spatial radiation and surface waves, while gap waveguide couplers are relatively large in size and are not suitable for integration.
Disclosure of Invention
The invention mainly solves the technical problem of providing the slot coupling directional coupler based on the integrated substrate gap waveguide, which can overcome the defects of the existing coupler and realize wide bandwidth and higher isolation.
In order to solve the technical problems, the invention adopts a technical scheme that: providing a gap coupling directional coupler based on integrated substrate gap waveguides, comprising two integrated substrate gap waveguides ISGW coupling waveguides with the same structure, wherein the ISGW coupling waveguides comprise a via layer dielectric plate (1) and a gap layer dielectric plate (2); the dielectric slab comprises a dielectric slab body, a dielectric slab, a first metal stratum (11), a first coupling microstrip line (12), a first circular metal patch (13), a second circular metal patch (14) and a third circular metal patch (15), wherein the first metal stratum (11) is printed on the upper surface of the dielectric slab body of the via layer, the first coupling microstrip line (12) comprises a first hexagonal transition section (121) and straight line sections (122) connected to the two sides of the first hexagonal transition section (121), the second circular metal patch (14) is arranged on the two sides of the straight line sections (122), the third circular metal patch (15) is arranged on the two sides of the first hexagonal transition section (121), the first circular metal patch (13) is arranged around the second circular metal patch (14) and the third circular metal patch (15), a first metal via hole (131) is arranged on the first circular metal patch (13), a second metal via hole (141) is formed in the second circular metal patch (14), and the third metal patch (15) is provided with a third metal via hole (151) and a third metal via hole (151) penetrates through the dielectric slab body of the first metal patch (151). The upper surface of the gap layer dielectric plate (2) is printed with a second coupling microstrip line (21), the lower surface of the gap layer dielectric plate is printed with a second metal stratum (22), the second metal stratum (22) is provided with a quasi-hexagonal coupling gap (221), the second coupling microstrip line (21) comprises a second-class hexagonal transition section (211) and arc sections (212) connected to two sides of the second-class hexagonal transition section (211), and the quasi-hexagonal coupling gap (221) is positioned right below the second-class hexagonal transition section (211); the lower surface of the via layer dielectric plate (1) is tightly attached to the upper surface of the gap layer dielectric plate (2), the first type hexagonal transition section (121) and the second type hexagonal transition section (211) are identical in shape and are aligned and overlapped, the straight line section (122) is at least partially aligned with the arc section (212), two ISGW coupling waveguides are oppositely arranged after rotating 180 degrees, and the second metal stratum (22) of the ISGW coupling waveguides are tightly attached to each other and are aligned and overlapped with the quasi-hexagonal coupling gaps (221).
Preferably, the first coupling microstrip line (12) is provided with fourth metal vias (123) which are periodically arranged, and the fourth metal vias (123) penetrate through the hole layer dielectric plate (1).
Preferably, the width of the arc segment (212) forms a stepped transition at least at one location.
Preferably, four sides of the first hexagonal transition section (121) connected with the straight line section (122) are arc sides, and the rest sides are straight line sides.
Preferably, the first circular metal patch (13), the second circular metal patch (14) and the third circular metal patch (15) have the same size, and the first metal via (131), the second metal via (141), the third metal via (151) and the fourth metal via (123) have the same size.
Preferably, the dielectric material with a dielectric constant of 3.48 and a loss tangent of 0.004 is adopted for the via layer dielectric plate (1), and a dielectric material with a dielectric constant of 2.2 and a loss tangent of 0.0009 is adopted for the gap layer dielectric plate (2).
Preferably, the second circular metal patch (14) is offset from the first circular metal patch (13) by a first distance along the length of the straight line segment (122) in the arrangement period.
Preferably, the third circular metal patch (15) is offset from the first circular metal patch (13) by a second distance along the width direction of the straight line segment (122) in the arrangement period.
Preferably, the first distance of the second circular metal patch (14) offset relative to the first circular metal patch (13) is adjusted to adjust return loss and isolation; a second distance by which the third circular metal patch (15) is offset with respect to the first circular metal patch (13) is adjusted to adjust return loss and isolation.
Preferably, the widths of the first type of hexagonal transition section (121), the second type of hexagonal transition section (211) and the hexagonal-like coupling slit (221) are adjusted to obtain different coupling values.
Unlike the prior art, the invention has the beneficial effects that:
1) The problem of high loss of the traditional microstrip coupler in high-frequency application is solved;
2) The size is small, the integration is easy, and the coupling coefficient is adjustable;
3) The isolation is high;
4) Has wider bandwidth.
Drawings
Fig. 1 is a schematic structural diagram of a slot coupling directional coupler based on an integrated substrate gap waveguide according to an embodiment of the present invention.
Fig. 2 is a schematic perspective view of the slot-coupled directional coupler shown in fig. 1.
Fig. 3 is a schematic top view of a via level dielectric plate of the slot coupled directional coupler shown in fig. 1.
Fig. 4 is a bottom schematic view of a via layer dielectric plate of the slot coupled directional coupler shown in fig. 1.
Fig. 5 is a schematic top view of a gap layer dielectric plate of the gap-coupled directional coupler shown in fig. 1.
Fig. 6 is a bottom schematic view of a gap layer dielectric plate of the gap-coupled directional coupler shown in fig. 1.
Fig. 7 is a schematic diagram of S-parameter simulation results of the slot-coupled directional coupler shown in fig. 1 when the coupling port attenuates 3 dB.
Fig. 8 is a schematic diagram of S-parameter simulation results of the slot-coupled directional coupler shown in fig. 1 when the coupling port attenuates 6 dB.
Fig. 9 is a schematic diagram of S-parameter simulation results of the slot-coupled directional coupler shown in fig. 1 when the coupling port attenuates 12 dB.
Fig. 10 is a schematic diagram of a phase difference simulation result of the through port and the coupling port of the slot coupling directional coupler shown in fig. 1.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1 to 6, a slot coupling directional coupler based on an integrated substrate gap waveguide according to an embodiment of the present invention includes two ISGW coupling waveguides having the same structure, and the ISGW coupling waveguides include a via layer dielectric plate 1 and a gap layer dielectric plate 2.
The upper surface of the dielectric plate 1 with the via layer is printed with a first metal stratum 11, and the lower surface is printed with a first coupling microstrip line 12, and a first circular metal patch 13, a second circular metal patch 14 and a third circular metal patch 15 which are periodically arranged. The first coupling microstrip line 12 includes a first type hexagonal transition section 121, straight line sections 122 connected to both sides of the first type hexagonal transition section 121, second circular metal patches 14 arranged on both sides of the straight line sections 122, third circular metal patches 15 arranged on both sides of the first type hexagonal transition section 121, and first circular metal patches 13 arranged around the second circular metal patches 14 and the third circular metal patches 15. As shown in fig. 4, part a is a first circular metal patch 13, part b is a second circular metal patch 14, and part c is a third circular metal patch 15.
The first circular metal patch 13 is provided with a first metal via 131, the second circular metal patch 14 is provided with a second metal via 141, the third circular metal patch 15 is provided with a third metal via 151, and the first metal via 131, the second metal via 141 and the third metal via 151 penetrate through the hole layer dielectric plate 1. In this way, on the via layer dielectric plate 1, the first circular metal patch 13 and the first metal via 131 form a first mushroom type EBG structure, and are connected with the first metal layer 11 through the first metal via 131; the second circular metal patch 14 and the second metal via 141 form a second mushroom type EBG structure, and are connected with the first metal stratum 11 through the second metal via 141; the third circular metal patch 15 and the third metal via 151 form a third mushroom type EBG structure, and are connected to the first metal layer 11 through the third metal via 151. The periodic arrangement of the three mushroom type EBG structures is the same as the first circular metal patch 13, the second circular metal patch 14, and the third circular metal patch 15.
In this embodiment, the first coupling microstrip line 12 is provided with fourth metal vias 123 periodically arranged, and the fourth metal vias 123 penetrate through the hole layer dielectric plate 1 and are connected to the first metal ground layer 11. Specifically, the first circular metal patch 13, the second circular metal patch 14, and the third circular metal patch 15 have the same size, and the first metal via 131, the second metal via 141, the third metal via 151, and the fourth metal via 123 have the same size. Thus, the three mushroom-type EBG structures are also the same in size.
The upper surface of the gap layer dielectric plate 2 is printed with a second coupling microstrip line 21, the lower surface is printed with a second metal stratum 22, the second metal stratum 22 is provided with a quasi-hexagonal coupling gap 221, the second coupling microstrip line 21 comprises a second-class hexagonal transition section 211 and arc sections 212 connected to two sides of the second-class hexagonal transition section 211, and the quasi-hexagonal coupling gap 221 is located right below the second-class hexagonal transition section 211.
For each ISGW coupled waveguide, the lower surface of the via layer dielectric plate 1 is closely attached to the upper surface of the gap layer dielectric plate 2, and the first type hexagonal transition section 121 and the second type hexagonal transition section 211 are identical in shape and coincide in alignment, with the straight line section 122 at least partially aligned with the arc section 212. Since the arc segment 212 may have a portion of a straight line that approximates or is equal to a straight line, the portion is aligned with the straight line segment 122.
The two ISGW coupling waveguides are oppositely arranged after rotating 180 degrees, and the second metal strata 22 of the two ISGW coupling waveguides are closely attached to each other, and the quasi-hexagonal coupling slots 221 are aligned and overlapped. As shown in fig. 2, after the two ISGW coupling waveguides are connected to each other, the directions of the arc segments 212 on the gap layer dielectric plate 2 of the two ISGW coupling waveguides are opposite, so that the two ISGW coupling waveguides are connected to each other after being rotated 180 degrees relative to each other, thereby forming a gap coupling directional coupler.
In this embodiment, four sides of the first hexagonal transition section 121 connected to the straight line section 122 are arc sides, and the remaining sides are straight line sides. By adjusting the radian of the arc edge, the return loss can be adjusted. Further, the width of arc segment 212 forms a step transition at least at one location, through which the return loss can be reduced. As shown in fig. 5, the arc segment 212 forms a stepped transition in width.
By selecting a proper periodic arrangement rule of the first circular metal patch 13, the second circular metal patch 14, and the third circular metal patch 15, the return loss can be reduced, while the isolation is improved. For example, as shown in fig. 3 and 4, the second circular metal patch 14 is offset from the first circular metal patch 13 by a first distance d1 in the length direction of the straight line segment 122 in the arrangement period, and the third circular metal patch 15 is offset from the first circular metal patch 13 by a second distance d2 in the width direction of the straight line segment 122 in the arrangement period. Adjusting a first distance d1 of the second circular metal patch 14 offset relative to the first circular metal patch 13 to adjust return loss and isolation; the second distance d2 by which the third circular metal patch 15 is offset with respect to the first circular metal patch 13 is adjusted to adjust the return loss and isolation.
Meanwhile, the tight coupling or the weak coupling can be realized by adjusting the widths of the first-type hexagonal transition sections 121, the second-type hexagonal transition sections 211 and the hexagonal coupling-like slots 221, so that different coupling values including coupling values of 3dB, 6dB or 12dB are obtained.
In one specific application, the dielectric material with a dielectric constant of 3.48 and a loss tangent of 0.004 is used for the via layer dielectric plate 1, and the dielectric material with a dielectric constant of 2.2 and a loss tangent of 0.0009 is used for the gap layer dielectric plate 2.
As shown in fig. 1, when the slot coupling directional coupler of the present embodiment works, the first coupling microstrip line 12, the second coupling microstrip line 21 and the quasi-hexagonal coupling slot 221 on the coupler form a coupling region, so as to implement a coupling function. When the first port D1 inputs signals, the second port D2 is a through port, the third port D3 is a coupling port, the fourth port D4 is an isolation port, and no signals are output; the input signal of the first port D1 is coupled to the output of the third port D3 through the coupling region, and the output signal of the second port D2 is 90 degrees different from the output signal of the third port D3.
Simulation results obtained by simulating the slot coupling directional coupler of the present embodiment are shown in fig. 7 to 10.
As shown in FIG. 7, when the coupling port attenuates by 3dB, the return loss S11 is lower than-20 dB in the frequency range from 23.07GHz to 28.55GHz, the transmission characteristic S12 is-3+/-1 dB, the coupling characteristic S13 is-3+/-1 dB, the isolation characteristic S14 is lower than-20 dB in the frequency range, and the phase difference result of the through port and the coupling port shown in FIG. 10 shows that the slit coupling directional coupler is orthogonal.
As shown in FIG. 8, when the coupling port attenuates by 6dB, the return loss S11 is lower than-20 dB in the frequency band of 24.48 GHz-30.74 GHz, the transmission characteristic S12 is-2+/-1 dB, the coupling characteristic S13 is-6+/-1 dB, the isolation characteristic S14 is lower than-20 dB in the frequency band, and the phase difference result of the through port and the coupling port shown in FIG. 10 shows that the slit coupling directional coupler is orthogonal.
As shown in FIG. 9, when the coupling port attenuates 12dB, the return loss S11 is lower than-20 dB in the frequency band of 25.6 GHz-31.14 GHz, the transmission characteristic S12 is-1+ -1 dB, the coupling characteristic S13 is-12+ -1 dB, the isolation characteristic S14 is lower than-20 dB in the frequency band, and the phase difference result of the through port and the coupling port shown in FIG. 10 shows that the slit coupling directional coupler is orthogonal.
The foregoing description is only illustrative of the present invention and is not intended to limit the scope of the invention, and all equivalent structures or equivalent processes or direct or indirect application in other related technical fields are included in the scope of the present invention.
Claims (10)
1. The slot coupling directional coupler based on the integrated substrate gap waveguide is characterized by comprising two integrated substrate gap waveguide ISGW coupling waveguides with the same structure, wherein the ISGW coupling waveguides comprise a via layer dielectric plate (1) and a gap layer dielectric plate (2);
the dielectric slab comprises a dielectric slab body, a dielectric slab, a first metal stratum (11), a first coupling microstrip line (12), a first circular metal patch (13), a second circular metal patch (14) and a third circular metal patch (15), wherein the first metal stratum (11) is printed on the upper surface of the dielectric slab body of the via layer, the first coupling microstrip line (12) comprises a first hexagonal transition section (121) and straight line sections (122) connected to the two sides of the first hexagonal transition section (121), the second circular metal patch (14) is arranged on the two sides of the straight line sections (122), the third circular metal patch (15) is arranged on the two sides of the first hexagonal transition section (121), the first circular metal patch (13) is arranged around the second circular metal patch (14) and the third circular metal patch (15), a first metal via hole (131) is arranged on the first circular metal patch (13), a second metal via hole (141) is formed in the second circular metal patch (14), and the third metal patch (15) is provided with a third metal via hole (151) and a third metal via hole (151) penetrates through the dielectric slab body of the first metal patch (151).
The upper surface of the gap layer dielectric plate (2) is printed with a second coupling microstrip line (21), the lower surface of the gap layer dielectric plate is printed with a second metal stratum (22), the second metal stratum (22) is provided with a quasi-hexagonal coupling gap (221), the second coupling microstrip line (21) comprises a second-class hexagonal transition section (211) and arc sections (212) connected to two sides of the second-class hexagonal transition section (211), and the quasi-hexagonal coupling gap (221) is positioned right below the second-class hexagonal transition section (211);
the lower surface of the via layer dielectric plate (1) is tightly attached to the upper surface of the gap layer dielectric plate (2), the first type hexagonal transition section (121) and the second type hexagonal transition section (211) are identical in shape and are aligned and overlapped, the straight line section (122) is at least partially aligned with the arc section (212), two ISGW coupling waveguides are oppositely arranged after rotating 180 degrees, and the second metal stratum (22) of the ISGW coupling waveguides are tightly attached to each other and are aligned and overlapped with the quasi-hexagonal coupling gaps (221).
2. The slot coupling directional coupler according to claim 1, wherein the first coupling microstrip line (12) is provided with fourth metal vias (123) periodically arranged, and the fourth metal vias (123) penetrate through the hole layer dielectric plate (1).
3. The slot-coupled directional coupler of claim 2, wherein the width of the arc segment (212) forms a stepped transition at least in one location.
4. A slot-coupled directional coupler according to claim 3, wherein the four sides of the hexagonal transition section (121) of the first type connected to the straight section (122) are arcuate sides and the remaining sides are straight sides.
5. The slot-coupled directional coupler of claim 4, wherein the first circular metal patch (13), the second circular metal patch (14), and the third circular metal patch (15) are the same size, and the first metal via (131), the second metal via (141), the third metal via (151), and the fourth metal via (123) are the same size.
6. The slot-coupled directional coupler according to claim 1, wherein the via-layer dielectric plate (1) is made of a dielectric material having a dielectric constant of 3.48 and a loss tangent of 0.004, and the gap-layer dielectric plate (2) is made of a dielectric material having a dielectric constant of 2.2 and a loss tangent of 0.0009.
7. The slot-coupled directional coupler according to claim 1, wherein the second circular metal patch (14) is offset from the first circular metal patch (13) by a first distance along the length of the straight section (122) over the arrangement period.
8. The slot-coupled directional coupler according to claim 7, wherein the third circular metal patch (15) is offset from the first circular metal patch (13) by a second distance in the width direction of the straight line segment (122) in the arrangement period.
9. The slot-coupled directional coupler according to claim 1, characterized in that the first distance by which the second circular metal patch (14) is offset with respect to the first circular metal patch (13) is adjusted to adjust the return loss and isolation; a second distance by which the third circular metal patch (15) is offset with respect to the first circular metal patch (13) is adjusted to adjust return loss and isolation.
10. The slot-coupled directional coupler according to claim 1, characterized in that the widths of the first class of hexagonal transitions (121), the second class of hexagonal transitions (211) and the class of hexagonal coupling slots (221) are adjusted to obtain different coupling values.
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| CN110364799A (en) * | 2019-07-15 | 2019-10-22 | 云南大学 | Double ridge integral substrate gap waveguides |
| CN111416183B (en) * | 2020-03-19 | 2021-10-29 | 南京智能高端装备产业研究院有限公司 | Novel single-passband filter coupler adopting double-layer circular patches |
| CN111697306A (en) * | 2020-06-23 | 2020-09-22 | 西安博瑞集信电子科技有限公司 | Orthogonal coupler |
| CN113644399A (en) * | 2021-08-25 | 2021-11-12 | 云南大学 | Multi-slit coupling directional coupler based on integrated substrate gap waveguide |
| CN115986347B (en) * | 2022-11-23 | 2023-09-15 | 中山大学 | Dual-frequency semi-closed super-surface cavity filter and transmission zero control method |
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