CN109889162B - Self-input controlled load modulation power amplifier and implementation method thereof - Google Patents
Self-input controlled load modulation power amplifier and implementation method thereof Download PDFInfo
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Abstract
The invention relates to a self-input controlled load modulation power amplifier and an implementation method thereof. The first orthogonal coupler converts one output signal into two paths of orthogonal signals through the power amplifying circuit to be output, and the signals output by the two paths of power amplifying circuits are connected to the input end of the second orthogonal coupler and then output to the load. And a required control signal is accessed at the isolation end of the second quadrature coupler for the purpose of load modulation. The control signal is realized by performing phase adjustment and power amplification on the other output signal. The load modulation power amplifier is realized by introducing the control signal by using the orthogonal coupler, and the control signal generates the control signal with required amplitude and phase according to the requirement by the input signal through the control signal generating circuit, so that the working bandwidth of the load modulation power amplifier is increased, and the efficiency in the power back-off range of the load modulation power amplifier is improved.
Description
Technical Field
The invention belongs to the technical field of wireless communication, and relates to a self-input controlled load modulation power amplifier and an implementation method thereof.
Background
With the rapid development of wireless communication technology, radio frequency microwave technology is more and more important in people's daily life. Modern wireless communication standards rely on modulated signals characterized by high spectral efficiency in order to optimize the use of scarce spectral resources. From the point of view of high frequency transmitters, this choice leads to strict requirements on linearity, accompanied by a very high peak-to-average power ratio (PAPR) of the signal of the Power Amplifier (PA). Although conventional power amplifiers, as a combined class AB, show very low efficiency at power back-off, widely adopted efficiency enhancement techniques such as the load modulation techniques represented by Doherty and Chireix keep their efficiency at power back-off high as well.
However, with the rapid development of communication technology, the modulation mode is also increasingly complex, and the narrowband characteristics of the conventional Doherty and Chireix modulation power amplifiers are increasingly unable to meet the requirements of the current wireless communication system, so that a novel radio frequency power amplifier with a broadband high-power back-off range is urgently needed to be developed to meet the requirements of the current and future wireless communication systems on high transmission rate.
Therefore, it is necessary to provide a solution to the above-mentioned drawbacks in the prior art.
Disclosure of Invention
The invention aims to provide a self-input controlled load modulation power amplifier and an implementation method thereof.
The invention relates to a method for realizing a self-input control load modulation power amplifier, which specifically comprises the following steps:
the method comprises the following steps: and selecting drain bias voltage and grid bias voltage according to the selected transistor DC characteristic scanning curve, so that the transistor is in a linear amplification state. At the moment, the conduction angle of the transistor is between pi and 2 pi, and the conduction angle requirement of the AB type power amplifier is met. And designing an input-output matching circuit for the transistor on the basis of the direct current bias. In order to expand the working bandwidth of the circuit, the matching circuit adopts a step impedance matching design. Matching input and output impedances of the transistors to a standard load impedance of 50 ohms, selecting a proper direct current bias point according to a topological graph of the power amplifying circuit, designing two standard AB class power amplifiers, matching the input and the output to the standard load impedance of 50 ohms, and completing the design of a first power amplifying circuit D1 and a second power amplifying circuit D2;
step two: the power amplifier with the enhanced bandwidth is realized by adopting the quadrature coupler with the broadband characteristic as a part of the power amplifier; the orthogonal coupler is a 3dB directional coupler and has high symmetry; the power of the input end is equally distributed to two output ends, and the two output ends have a phase difference of 90 degrees; the design of the first quadrature coupler U1, the second quadrature coupler U2, and the third quadrature coupler U3 is completed.
Step three: in order to realize the self-input controlled power amplifier, a third orthogonal coupler U3 is used as a power divider, one input end of the third orthogonal coupler U3 is connected with an input signal, the other input end of the third orthogonal coupler U3 is grounded through an isolation resistor, and two output ends of the third orthogonal coupler U3 are respectively connected with a signal control branch circuit and an input end of a power amplification circuit, so that the input signal is output to a power amplification module and a signal control module in an equipower manner;
step four: taking one input end of the first orthogonal coupler U1 as an input end of the power amplification module, wherein the input end of the power amplification module is connected with one output end of the first orthogonal coupler U3 in the step three, the other input end of the first orthogonal coupler U1 is grounded through an isolation resistor, and two output ends of the first orthogonal coupler U1 are respectively connected with the input ends of the first power amplification circuit D1 and the second power amplification circuit D2 in the step one. Two input ends of a second orthogonal coupler U2 are respectively connected with output ends of a first power amplifying circuit D1 and a second power amplifying circuit D2, one output end of the second orthogonal coupler U2 outputs a signal to a load, and the other output end of the second orthogonal coupler U2 is used as a control end to access a control signal. The power amplification module is designed.
Step five: the reflection coefficients of the first power amplifier circuit D1 and the second power amplifier circuit D2 are expressed as follows:
wherein Z b α is a power ratio of the control signal to the transmission signal of the power amplifying circuit, which is a load impedance of the power amplifier. The load modulation of the first power amplifier circuit D1 and the second power amplifier circuit D2 is realized by changing α.
And step six, selecting drain electrode bias voltage and grid electrode bias voltage according to the direct current characteristic scanning curve of the transistor, and enabling the transistor to enter a saturated state in advance. Debugging a third power amplifying circuit D3 of the power amplifying circuit which is saturated in advance than the first power amplifying circuit D1 and the second power amplifying circuit D2 in the first step so as to achieve the purpose of controlling the amplitude adjustment of the signal;
step seven: and inserting a phase tuning circuit between the third quadrature coupler U3 and the input end of the third power amplifying circuit D3 in the step six to achieve the aim of controlling the phase adjustment of the signal. An isolation end of the third power amplification circuit D3 is grounded through an isolation resistor, one output end of the third power amplification circuit D3 serves as a signal output end of the signal control module to output a control signal, and the signal output by the signal control circuit is connected to the other output end of the second quadrature coupler U2; a self-input controlled load modulation type power amplifier is obtained.
The self-input control load modulation power amplifier realized according to the mode comprises three orthogonal couplers, three power amplification circuits and a phase tuning circuit, and is characterized in that: the third orthogonal coupler is used as a power divider for equally dividing the input signal to the power amplification module and the signal control module; one input end of the third orthogonal coupler is connected with an input signal, and the other input end of the third orthogonal coupler is grounded through an isolation resistor; the isolation resistor is connected to the isolation end of the orthogonal coupler to achieve good isolation of input and output signals. Two output ends of the third orthogonal coupler are respectively connected with the power amplification module and the signal control module;
the power amplification module comprises a first power amplification circuit, a second power amplification circuit, a first quadrature coupler and a second quadrature coupler; the first orthogonal coupler is used for converting the signal output by the third orthogonal coupler to the power amplification module into two paths of orthogonal signals to be output; one input end of the first orthogonal coupler is connected with one output end of the third orthogonal coupler, and the other input end of the first orthogonal coupler is grounded through an isolation resistor; two output ends of the first orthogonal coupler are respectively connected with input ends of the first power amplifying circuit and the second power amplifying circuit; the signal output by the first orthogonal coupler is amplified in power through the first power amplifying circuit and the second power amplifying circuit. The output ends of the first power amplifying circuit and the second power amplifying circuit are respectively connected with two input ends of a second orthogonal coupler, and signals output by the two paths of power amplifying circuits are connected to the second orthogonal coupler; an output of the second quadrature coupler outputs the output signal to a load.
The signal control module comprises a phase tuner and a third power amplification circuit; the other output end of the third orthogonal coupler is connected with the input end of the third power amplification circuit through the phase tuner, and the output end of the third power amplification circuit is connected with the other output end of the second orthogonal coupler to be used as a control signal for reconfigurable load modulation.
The three power amplifying circuits comprise an input matching circuit, a power transistor, an output matching circuit and a direct current bias circuit which are connected in series; the conduction angle of the third power amplifying circuit transistor is larger than the conduction angles of the first power amplifying circuit transistor and the second power amplifying circuit transistor.
The three orthogonal couplers are 3dB directional couplers and have high symmetry, any port can be used as an input port, an output port is positioned on the opposite side of the input port, and an isolation end is positioned on the rest port on one side of the input end; the power of the input is equally distributed to the two output ports with a 90 degree phase shift between the two output ports and no power coupled to the isolated port.
The first orthogonal coupler, the second orthogonal coupler and the third orthogonal coupler have the same structure and comprise 8 microstrip lines, and the impedances of the TL1, TL3, TL4, TL5, TL6 and TL8 microstrip lines are Z respectively 0 Electrical length is one quarter wavelength; the impedances of the TL2 and TL7 microstrip lines are respectively
Electrical length is one quarter wavelength; one end of the TL1 and one end of the TL2 are connected with one end of the TL 4; one end of TL3 and the other end of TL2 are connected with one end of TL 5; one end of the TL6 and the other end of the TL4 are connected with one end of the TL 7; one end of the TL8 and the other end of the TL7 are connected with the other end of the TL 5; the other end of TL3 and the other end of TL8 are used as two input ends of the orthogonal coupler, and the other end of TL1 and the other end of TL6 are used as two output ends of the orthogonal coupler.
Preferably, the control signal is a vector control signal.
The load modulation of the power amplifying circuit is realized by changing the power ratio alpha of the control signal to the transmission signal of the power amplifying circuit.
The reconfigurable load modulation power amplifier is realized by using the orthogonal coupler to add the control signal, and meanwhile, the control signal is generated by the input signal according to the requirement without additionally introducing an irrelevant signal, so that the working bandwidth of the load modulation power amplifier is increased, and the high-efficiency power back-off range of the load modulation power amplifier is enlarged.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a topology diagram of a power amplification circuit;
FIG. 3 is a schematic diagram of the quadrature coupler of FIG. 1;
FIG. 4 is a DC characteristic scan curve of a transistor;
FIG. 5 is a schematic diagram of the relationship between the amplitude and phase of the control signal and the reflection coefficient of the power amplifier circuit in accordance with the present invention;
FIG. 6 is a schematic diagram illustrating the principle of control signal amplitude generation in the present invention;
FIG. 7 is a graph of simulation data for simulating the present invention using ADS software.
Detailed Description
As shown in fig. 1, a method for implementing a self-input controlled load modulation power amplifier specifically includes the following steps:
the method comprises the following steps: according to the selected transistor (such as CGH40010F GaN HEMT), the drain bias voltage of 28V and the gate bias voltage of-2.7V are selected to enable the transistor to be in a linear amplification state by utilizing the direct current characteristic scanning curve shown in figure 4. At the moment, the conduction angle of the transistor is between pi and 2 pi, and the conduction angle requirement of the AB type power amplifier is met. And designing an input-output matching circuit for the transistor on the basis of the direct current bias. In order to expand the working bandwidth of the circuit, the matching circuit adopts a step impedance matching design. The input and output impedances of the transistors are all matched to a standard load impedance of 50 ohms, and the topology of the power amplifying circuit is shown in fig. 2. Selecting proper direct current bias points, designing two standard AB power amplifiers, matching input and output to standard 50 ohms, and completing the design of a first power amplifying circuit D1 and a second power amplifying circuit D2;
step two: in order to realize a bandwidth enhanced power amplifier, the present invention employs a quadrature coupler having a broadband characteristic as a part of the power amplifier. As shown in fig. 3, the quadrature coupler is a coupler structure composed of 8 microstrip lines, and the impedances of TL1, TL3, TL4, TL5, TL6 and TL8 microstrip lines are Z respectively 0 The electrical length is a quarter wavelength. The impedances of the TL2 and TL7 microstrip lines are respectively
The electrical length is a quarter wavelength. When the power of the output end (such as the port 3) of the quadrature coupler is smaller than the power of the input end (such as the port 1) by 3dB according to the parameter debugging, and the phase of the output end (such as the ports 2 and 3) is different by 90 degrees. The design of the first quadrature coupler U1, the second quadrature coupler U2 and the third quadrature coupler U3 is completed.
Step three: in order to realize the power amplifier with self-input control, a third orthogonal coupler U3 is used as a power divider, a port 1 of the third orthogonal coupler U3 is connected with an input signal, a port 4 of the third orthogonal coupler U3 is connected with an isolation resistor, and ports 2 and 3 of the third orthogonal coupler U3 are respectively connected with a signal control branch circuit and an input end of a power amplification circuit, so that the input signal is output to a power amplification module and a signal control module in an equipower manner;
step four: taking a port 1 of the first orthogonal coupler U1 as an input end of the power amplification module, that is, the port 1 of the first orthogonal coupler U1 is connected to a port 3 of the third orthogonal coupler U3, a port 4 of the first orthogonal coupler U1 is connected to the isolation resistor, and ports 2 and 3 of the first orthogonal coupler U1 as output ends are respectively connected to input ends of the first power amplification circuit D1 and the second power amplification circuit D2 in the first step.
The port 1 and the port 4 of the second orthogonal coupler U2 are used as input ends, the port 1 and the port 4 of the second orthogonal coupler U2 are respectively connected with the output ends of the first power amplifying circuit D1 and the second power amplifying circuit D2, the port 3 of the second orthogonal coupler U2 outputs signals to a load, and the port 2 of the second orthogonal coupler U2 is used as a control end to be connected with control signals. And finishing the design of the power amplification module.
Step five: the reflection coefficients of the first power amplifier circuit D1 and the second power amplifier circuit D2 are expressed as follows:
wherein Z b α is a power ratio of the control signal to the transmission signal of the power amplifying circuit, which is a load impedance of the power amplifier. The load modulation of the first power amplifier circuit D1 and the second power amplifier circuit D2 is realized by changing α. For example, a modulation of 50 ohms to 25 ohms is to be achieved, i.e. a power ratio a of 1/4 is required.
Step six, as shown in fig. 5, increasing the control signal power | Pctrl | can increase the reflection coefficient magnitude (| Γ |). Note that | Pctrl | need only be reduced relative to Pin, not in an absolute sense. To achieve this relationship, the present invention introduces a "control" third power amplifying circuit D3 having a non-linear input-output characteristic, which is shown in fig. 6. The third power amplifying circuit D3 is designed to be saturated at a lower power, and thus the relative control power Prel (with respect to the output power levels of the first and second power amplifying circuits D1 and D2) is reduced as required with a reduction in the input drive. In this way, the load modulation of the first and second power amplifying circuits D1 and D2 caused by the control signal generated by the input signal will result in an improved overall efficiency compared to the applied drive signal alone. Therefore, the conduction angle of the transistor of the third power amplifier circuit D3 should be larger than that of the first and second power amplifier circuits D1 and D2. According to the dc characteristic scan curve of the transistor of fig. 4, the drain bias voltage of 28V and the gate bias voltage of-2.0V are selected to bring the transistor into saturation in advance. Debugging a third power amplifying circuit D3 of the power amplifying circuit which is saturated in advance than the first power amplifying circuit D1 and the second power amplifying circuit D2 in the first step so as to achieve the purpose of controlling the amplitude adjustment of the signal;
step seven: and inserting a phase tuning circuit between the third quadrature coupler U3 and the input end of the third power amplifying circuit D3 in the step six to achieve the aim of controlling the phase adjustment of the signal. The isolation end of the third power amplifying circuit D3 is connected with the isolation resistor, the output end of the third power amplifying circuit D3 is used as the signal output end of the signal control module to output a control signal, and the signal output by the signal control circuit is connected to the port 2 of the second orthogonal coupler U2; a self-input controlled load modulation class power amplifier is obtained.
As shown in fig. 5, increasing the phase Φ of the control signal rotates the reflection coefficient Γ counterclockwise in the smith chart. The phase of the control signal relative to the output signals of the first and second power amplifier circuits D1 and D2 is important to ensure that the impedance trace intersects with a peak Power Added Efficiency (PAE) impedance point of the first and second power amplifier circuits D1 and D2. In the present invention, a phase tuner is inserted before inputting a signal to a control power amplifier circuit to adjust the phase of the control signal, so that the load impedance locus of the first power amplifier circuit D1 and the second power amplifier circuit D2 in fig. 6 is changed to reach the maximum Power Added Efficiency (PAE) impedance point.
As shown in fig. 1, the self-input controlled load modulation power amplifier includes three quadrature couplers, three power amplification circuits, and a phase tuning circuit, and the third quadrature coupler U3 is used as a power divider for equally dividing an input signal to the power amplification module and the signal control module. The signal control module comprises a phase tuner and a third power amplifying circuit D3; the power amplification module comprises a first power amplification circuit D1, a second power amplification circuit D2, a first quadrature coupler U1 and a second quadrature coupler U2.
The first orthogonal coupler U1 is used for converting the signal output by the third orthogonal coupler U3 to the power amplification module into two paths of orthogonal signals to be output. The isolation resistor is connected to the isolation end of the orthogonal coupler to achieve good isolation of input and output signals. The signal output by the first quadrature coupler U1 is power amplified by a first power amplifying circuit D1 and a second power amplifying circuit D2. Signals output by the two paths of power amplifying circuits are connected to the input end of the second orthogonal coupler U2, and the output end of the second orthogonal coupler U2 outputs output signals to a load. And a required control signal is accessed at the isolation end of the second quadrature coupler U2 for the purpose of reconfigurable load modulation.
As shown in fig. 2, each of the three power amplifying circuits includes an input matching circuit, a power transistor, an output matching circuit, and a dc bias circuit connected in series; the conduction angle of the third power amplification circuit transistor is larger than the conduction angles of the first power amplification circuit transistor and the second power amplification circuit transistor.
The orthogonal coupler is a 3dB directional coupler and has high symmetry, any port can be used as an input port, an output port is positioned on the opposite side of the input port, and an isolation end is positioned on the rest port on one side of the input end; the power of the input is equally distributed to the two output ports with a 90 degree phase shift between the two output ports and no power coupled to the isolated port.
The power amplifier is an AB type power amplifier and is realized by adopting a transistor. The isolation resistance is 50 ohms. The control signal generating circuit generates a vector control signal according to the requirement.
Compared with the prior art, the load modulation power amplifier is realized by introducing the control signal by using the quadrature coupler, and the control signal is generated by the input signal through the control signal generating circuit according to the requirement, so that the working bandwidth of the load modulation power amplifier is increased, and the high-efficiency power back-off range of the load modulation power amplifier is enlarged. The modulation range of the load impedance can be selected according to the power back-off range, and the amplitude and the phase of the control signal which are changed along with the change of the input signal are realized. And because the orthogonal coupler is combined with the load modulation method of the control signal, the method has good broadband characteristics, and meanwhile, the efficiency of the whole power amplifier is improved by generating the control signal from the input signal, so that the self-input controlled broadband high-efficiency load modulation power amplifier can be realized.
As shown in fig. 7, for a simulation data chart simulated by using ADS software based on the method of the present invention, it can be known from the simulation result that the self-input controlled load modulation power amplifier realizes a high efficiency power backoff of 6dB in a wide frequency band range of 1.8GHz-3.8GHz, which is greater than the efficiency at the 6dB power backoff of the conventional load modulation power amplifiers such as Doherty and chirie.
The above description of the embodiments is only intended to facilitate the understanding of the method of the invention and its core idea. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (5)
1. A method for realizing a self-input control load modulation power amplifier is characterized in that: the method specifically comprises the following steps:
the method comprises the following steps: selecting drain electrode bias voltage and grid electrode bias voltage according to the selected transistor direct current characteristic scanning curve to enable the transistor to be in a linear amplification state; at the moment, the conduction angle of the transistor is between pi and 2 pi, and the conduction angle requirement of the AB type power amplifier is met; carrying out input and output matching circuit design on the transistor on the basis of the direct current bias; in order to expand the working bandwidth of the circuit, the matching circuit adopts a step impedance matching design; matching input and output impedances of the transistors to a standard load impedance of 50 ohms, selecting a proper direct current bias point according to a topological graph of the power amplifying circuit, designing two standard AB class power amplifiers, matching the input and the output to the standard load impedance of 50 ohms, and completing the design of a first power amplifying circuit D1 and a second power amplifying circuit D2;
step two: the power amplifier with the enhanced bandwidth is realized by adopting the orthogonal coupler with the broadband characteristic as one part of the power amplifier; the orthogonal coupler is a 3dB directional coupler and has high symmetry; the power of the input end is equally distributed to two output ends, and the two output ends have a phase difference of 90 degrees; completing the design of a first quadrature coupler, a second quadrature coupler and a third quadrature coupler;
step three: in order to realize the self-input controlled power amplifier, a third orthogonal coupler is used as a power divider, one input end of the third orthogonal coupler is connected with an input signal, the other input end of the third orthogonal coupler is grounded through an isolation resistor, and two output ends of the third orthogonal coupler are respectively connected with the signal control branch circuit and the input end of the power amplification circuit, so that the input signal is output to the power amplification module and the signal control module in an equipower manner;
step four: taking one input end of the first orthogonal coupler as an input end of the power amplification module, wherein the input end of the power amplification module is connected with one output end of the first orthogonal coupler in the third step, the other input end of the first orthogonal coupler is grounded through an isolation resistor, and two output ends of the first orthogonal coupler are respectively connected with the input ends of the first power amplification circuit and the second power amplification circuit in the first step; two input ends of a second orthogonal coupler are respectively connected with output ends of the first power amplifying circuit and the second power amplifying circuit, one output end of the second orthogonal coupler outputs a signal to a load, and the other output end of the second orthogonal coupler is used as a control end to access a control signal; finishing the design of a power amplification module;
step five: the reflection coefficients of the first power amplifying circuit and the second power amplifying circuit are expressed as follows:
wherein Z b Alpha is the power ratio of the control signal to the transmission signal of the power amplifying circuit; by changing intoThe load modulation of the first power amplifying circuit D1 and the second power amplifying circuit is realized by changing alpha;
selecting drain electrode bias voltage and grid electrode bias voltage according to the direct current characteristic scanning curve of the transistor to enable the transistor to enter a saturated state in advance; debugging a third power amplifying circuit which is saturated in advance than the first power amplifying circuit and the second power amplifying circuit in the first step to achieve the aim of controlling the amplitude adjustment of the signal;
step seven: inserting a phase tuning circuit between the third quadrature coupler and the input end of the third power amplifying circuit in the sixth step to achieve the purpose of controlling the phase adjustment of the signal; the isolation end of the third power amplification circuit is grounded through an isolation resistor, one output end of the third power amplification circuit is used as a signal output end of the signal control module to output a control signal, and the signal output by the signal control circuit is connected to the other output end of the second orthogonal coupler; a self-input controlled load modulation class power amplifier is obtained.
2. A self-input controlled load modulation power amplifier comprises a first quadrature coupler, a second quadrature coupler, a third quadrature coupler, three power amplification circuits and a phase tuning circuit, and is characterized in that: the third orthogonal coupler is used as a power divider for equally dividing the input signal to the power amplification module and the signal control module; one input end of the third orthogonal coupler is connected with an input signal, and the other input end of the third orthogonal coupler is grounded through an isolation resistor; the isolation resistor is connected to the isolation end of the orthogonal coupler to enable the input and output signals to achieve good isolation; two output ends of the third orthogonal coupler are respectively connected with the power amplification module and the signal control module;
the power amplification module comprises a first power amplification circuit, a second power amplification circuit, a first quadrature coupler and a second quadrature coupler; the first orthogonal coupler is used for converting the signal output by the third orthogonal coupler to the power amplification module into two paths of orthogonal signals to be output; one input end of the first orthogonal coupler is connected with one output end of the third orthogonal coupler, and the other input end of the first orthogonal coupler is grounded through an isolation resistor; two output ends of the first orthogonal coupler are respectively connected with input ends of the first power amplifying circuit and the second power amplifying circuit; the signal output by the first orthogonal coupler is subjected to power amplification through a first power amplification circuit and a second power amplification circuit; the output ends of the first power amplifying circuit and the second power amplifying circuit are respectively connected with two input ends of a second orthogonal coupler, and signals output by the two paths of power amplifying circuits are connected to the second orthogonal coupler; an output terminal of the second quadrature coupler outputs the output signal to the load;
the signal control module comprises a phase tuner and a third power amplification circuit; the other output end of the third orthogonal coupler is connected with the input end of a third power amplification circuit through a phase tuner, and the output end of the third power amplification circuit is connected with the other output end of the second orthogonal coupler to be used as a control signal for reconfigurable load modulation;
the three power amplifying circuits comprise an input matching circuit, a power transistor, an output matching circuit and a direct current bias circuit which are connected in series; the conduction angle of the third power amplification circuit transistor is larger than the conduction angles of the first power amplification circuit transistor and the second power amplification circuit transistor;
the three orthogonal couplers are 3dB directional couplers and have high symmetry, any port can be used as an input port, an output port is positioned on the opposite side of the input port, and an isolation end is positioned on the rest port on one side of the input end; the power of the input is equally distributed to the two output ports with a 90 degree phase shift between the two output ports and no power coupled to the isolated port.
3. A self-input controlled load modulation class power amplifier as claimed in claim 2, characterized in that: the first orthogonal coupler, the second orthogonal coupler and the third orthogonal coupler have the same structure and comprise 8 microstrip lines, and the impedances of the TL1, TL3, TL4, TL5, TL6 and TL8 microstrip lines are Z respectively 0 Electrical length is one quarter wavelength; the impedances of the TL2 and TL7 microstrip lines are respectively
Electrical length is one quarter wavelength; one end of the TL1 and one end of the TL2 are connected with one end of the TL 4; one end of TL3 and the other end of TL2 are connected with one end of TL 5; one end of the TL6 and the other end of the TL4 are connected with one end of the TL 7; one end of the TL8 and the other end of the TL7 are connected with the other end of the TL 5; the other end of TL3 and the other end of TL8 are used as two input ends of the orthogonal coupler, and the other end of TL1 and the other end of TL6 are used as two output ends of the orthogonal coupler.
4. A self-input controlled load modulation class power amplifier as claimed in claim 2, characterized in that: the control signal is a vector control signal.
5. A self-input controlled load modulation class power amplifier as claimed in claim 2, characterized in that: the load modulation of the power amplifying circuit is realized by changing the power ratio alpha of the control signal to the transmission signal of the power amplifying circuit.
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| CN111740703B (en) * | 2020-05-25 | 2024-04-05 | 杭州电子科技大学 | pseudo-Doherty self-input-control load modulation balance type power amplifier and implementation method thereof |
| CN112543006B (en) * | 2020-12-01 | 2023-04-07 | 中国电子科技集团公司第五十五研究所 | Ultra-wideband reconfigurable power amplifier monolithic microwave integrated circuit |
| CN113364417A (en) * | 2021-06-22 | 2021-09-07 | 苏州悉芯射频微电子有限公司 | Adjustable load balance power amplifier structure |
| CN113871832B (en) * | 2021-09-27 | 2022-07-12 | 中国电信股份有限公司 | Coupling device |
| CN114513173B (en) * | 2022-01-14 | 2024-06-14 | 清华大学 | Radio frequency power amplifier and application thereof |
| CN117639684A (en) * | 2022-08-11 | 2024-03-01 | 中兴通讯股份有限公司 | Broadband power amplifier, method of amplifying broadband power, and readable storage medium |
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| CN106452370A (en) * | 2016-10-12 | 2017-02-22 | 杭州电子科技大学 | High-fallback Doherty power amplifier based on asymmetric structure and implementation method of high-fallback Doherty power amplifier |
| CN108880501A (en) * | 2018-06-22 | 2018-11-23 | 杭州电子科技大学 | A kind of broadband out-phase power combiner |
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| CN108880501A (en) * | 2018-06-22 | 2018-11-23 | 杭州电子科技大学 | A kind of broadband out-phase power combiner |
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