CN109860124B - 半导体装置以及电力变换装置 - Google Patents

半导体装置以及电力变换装置 Download PDF

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CN109860124B
CN109860124B CN201811409878.5A CN201811409878A CN109860124B CN 109860124 B CN109860124 B CN 109860124B CN 201811409878 A CN201811409878 A CN 201811409878A CN 109860124 B CN109860124 B CN 109860124B
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CN109860124A (zh
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村田大辅
吉田博
近藤聪
浅田晋助
梶勇辅
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Mitsubishi Electric Corp
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Abstract

本发明的目的在于，提供能够将从没有添加阻燃剂的树脂产生的气体的影响减小的半导体装置以及具有该半导体装置的电力变换装置。本发明涉及的半导体装置具备：半导体元件(6)，其设置于绝缘基板(1)之上；壳体(7)，其设置于绝缘基板(1)的外缘，具有与半导体元件(6)相对的开口部；封装树脂(10)，其在壳体(7)内对半导体元件(6)进行封装；以及盖(11)，其阻塞壳体(7)的开口部，封装树脂(10)不含阻燃剂，盖(11)含有阻燃剂，在封装树脂(10)和盖(11)之间设置间隙。

Description

半导体装置以及电力变换装置
技术领域
本发明涉及半导体装置以及电力变换装置，特别地涉及电力用半导体装置。
背景技术
就以往的半导体装置而言，在绝缘基板之上设置有电路图案，在该电路图案之上经由焊料搭载有半导体元件。另外，半导体元件通过环氧树脂进行封装，在环氧树脂中添加有阻燃剂。添加了阻燃剂的环氧树脂在由该环氧树脂封装的半导体元件的工作温度成为例如175℃的高温时，树脂被分解。由此，存在下述问题，即，环氧树脂的耐热性降低，半导体装置的寿命降低。
作为上述问题的对策，为了应对比以往更高温的高温工作，而公开了一种半导体装置，其通过没有添加阻燃剂的树脂对半导体元件进行封装，将该没有添加阻燃剂的树脂通过添加了阻燃剂的树脂进行封装(例如，参照专利文献1)。
专利文献1：日本特开2013－4729号公报
在专利文献1中，如果半导体元件进行工作而成为高温，则封装该半导体元件的没有添加阻燃剂的树脂成为高温而产生气体。由于因这样产生的气体而引起的应力，存在下述问题，即，在没有添加阻燃剂的树脂以及添加了阻燃剂的树脂产生裂缝等。虽然期望将从没有添加阻燃剂的树脂产生的气体的影响减小，但在现有技术中对于气体的影响没有进行过考虑。
发明内容
本发明就是为了解决上述问题而提出的，其目的在于，提供能够将从没有添加阻燃剂的树脂产生的气体的影响减小的半导体装置以及具有该半导体装置的电力变换装置。
为了解决上述的课题，本发明涉及的半导体装置具备：半导体元件，其设置于绝缘基板之上；壳体，其设置于绝缘基板的外缘，具有与半导体元件相对的开口部；封装树脂，其在壳体内对半导体元件进行封装；以及盖，其阻塞壳体的开口部，封装树脂不含阻燃剂，盖含有阻燃剂，在封装树脂和盖之间设置间隙。
发明的效果
根据本发明，半导体装置具备：半导体元件，其设置于绝缘基板之上；壳体，其设置于绝缘基板的外缘，具有与半导体元件相对的开口部；封装树脂，其在壳体内对半导体元件进行封装；以及盖，其阻塞壳体的开口部，封装树脂不含阻燃剂，盖含有阻燃剂，在封装树脂和盖之间设置间隙，因此，能够将从没有添加阻燃剂的树脂产生的气体的影响减小。
附图说明
图1是表示本发明的实施方式1涉及的半导体装置的结构的一个例子的剖面图。
图2是表示本发明的实施方式2涉及的半导体装置的结构的一个例子的剖面图。
图3是图2的区域A的放大图。
图4是表示本发明的实施方式3涉及的半导体装置的结构的一个例子的剖面图。
图5是表示本发明的实施方式3涉及的半导体装置的结构的一个例子的剖面图。
图6是图5的区域B的放大图。
图7是表示电力变换***的结构的框图，在该电力变换***中应用了本发明的实施方式4涉及的电力变换装置。
标号的说明
1绝缘基板，2金属板，3绝缘层，4电路图案，5焊料，6半导体元件，7壳体，8外部连接端子，9导线，10封装树脂，11盖，12间隙，13凸起部，14凸起部，100电源，200电力变换装置，201主变换电路，202半导体模块，203控制电路，300负载。
具体实施方式
下面，基于附图，对本发明的实施方式进行说明。
<实施方式1>
图1是表示本发明的实施方式1涉及的半导体装置的结构的一个例子的剖面图。
绝缘基板1由金属板2、在金属板2之上设置的绝缘层3和在绝缘层3之上设置的电路图案4构成。在电路图案4之上经由焊料5设置有半导体元件6。半导体元件6至少包含SiC或者GaN。
壳体7设置于绝缘基板1的外缘，通过粘接剂等与绝缘基板1粘接。另外，壳体7具有与半导体元件6相对的开口部。在壳体7设置有外部连接端子8。半导体元件6和外部连接端子8经由导线9电连接。
在壳体7内，由封装树脂10封装半导体元件6。在封装树脂10中没有添加阻燃剂。盖11以阻塞壳体7的开口部的方式设置。盖11由添加了阻燃剂的树脂构成。在盖11和封装树脂10之间设置有间隙12。就间隙12而言，盖11和封装树脂10的间隔只要大于或等于半导体装置的最大翘曲量，例如大于或等于200μm即可。
由此，根据本实施方式1，在没有添加阻燃剂的封装树脂10和添加了阻燃剂的盖11之间设置有间隙12，因此，能够使在半导体元件高温工作时从没有添加阻燃剂的封装树脂10产生的气体停留于间隙。由此，作为半导体装置整体，能够将从没有添加阻燃剂的封装树脂10产生的气体的影响减小，能够提高半导体装置的可靠性。
此外，为了将从没有添加阻燃剂的封装树脂10产生的气体排放到半导体装置的外部，也可以在壳体7和盖11接触的部位的一部分设置间隙。
<实施方式2>
图2是表示本发明的实施方式2涉及的半导体装置的结构的一个例子的剖面图。
在本实施方式2中，特征在于，盖11在该盖11的延伸方向具有与壳体7接触的作为第1凸起部的凸起部13。其它的结构与实施方式1相同，因此，在这里省略详细的说明。
如图2所示，盖11的凸起部13以载置于壳体7的上表面的方式设置。通过采用这样的结构，从而容易进行高度调整，能够容易地控制盖11和封装树脂10之间的间隙12的大小。此外，凸起部13的形状也可以是例如圆柱形状、四棱柱形状、或者三角形状。
由此，根据本实施方式2，通过在盖11设置凸起部13，从而能够容易地控制盖11和封装树脂10之间的间隙12的大小。另外，半导体装置的外形的设计变得容易。
此外，凸起部13既可以遍布在壳体7的整周而形成，也可以在壳体7的整周之中局部性地形成。在壳体7的整周之中局部性地形成凸起部13的情况下，期望使凸起部13形成于大于或等于3个部位。另外，为了将从没有添加阻燃剂的封装树脂10产生的气体排放到半导体装置的外部，也可以在壳体7和盖11接触的部位的一部分设置间隙。
如图3所示，也可以在凸起部13以及壳体7设置爪部。通过使凸起部13的爪部和壳体7的爪部嵌合，从而提高作业性。此外，各爪部既可以遍布在壳体7的整周而形成，也可以在壳体7的整周之中局部性地形成。在壳体7的整周之中局部性地形成各爪部的情况下，期望使各爪部形成于大于或等于3个部位。另外，为了将从没有添加阻燃剂的封装树脂10产生的气体排放到半导体装置的外部，也可以在壳体7和盖11接触的部位的一部分设置间隙。
<实施方式3>
图4、5是表示本发明的实施方式3涉及的半导体装置的结构的一个例子的剖面图。
在本实施方式3中，特征在于，盖11在相对于该盖11的延伸方向垂直的方向具有作为第2凸起部的凸起部14，凸起部14与绝缘基板1或者壳体7接触。其它的结构与实施方式1相同，因此，在这里省略详细的说明。
如图4所示，凸起部14与绝缘基板1接触。如图5所示，凸起部14与壳体7接触。通过采用这样的结构，从而容易进行高度调整，能够容易地控制盖11和封装树脂10之间的间隙12的大小。此外，凸起部14的形状也可以是例如圆柱形状、四棱柱形状、或者三角形状。
由此，根据本实施方式3，通过在盖11设置凸起部14，从而能够容易地控制盖11和封装树脂10之间的间隙12的大小。另外，半导体装置的外形的设计变得容易。
如图4、5所示，凸起部14埋入至没有添加阻燃剂的封装树脂10。因此，相比于实施方式1、2能够进一步将盖11固定。
此外，凸起部14既可以遍布在壳体7的整周而形成，也可以在壳体7的整周之中局部性地形成。在壳体7的整周之中局部性地形成凸起部14的情况下，期望使凸起部14形成于大于或等于3个部位。另外，为了将从没有添加阻燃剂的封装树脂10产生的气体排放到半导体装置的外部，也可以在壳体7和盖11接触的部位的一部分设置间隙。
如图6所示，也可以在凸起部14以及壳体7设置爪部。通过使凸起部14的爪部和壳体7的爪部嵌合，从而提高作业性。此外，各爪部既可以遍布在壳体7的整周而形成，也可以在壳体7的整周之中局部性地形成。在壳体7的整周之中局部性地形成各爪部的情况下，期望使各爪部形成于大于或等于3个部位。另外，为了将从没有添加阻燃剂的封装树脂10产生的气体排放到半导体装置的外部，也可以在壳体7和盖11接触的部位的一部分设置间隙。
<实施方式4>
本发明涉及的实施方式4是将上述实施方式1～3所涉及的半导体装置应用于电力变换装置。本发明涉及的实施方式不限定于特定的电力变换装置，但以下，作为实施方式4，对将本发明涉及的实施方式应用于三相逆变器的情况进行说明。
图7是表示电力变换***的结构的框图，在该电力变换***中应用了本实施方式4涉及的电力变换装置。
图7所示的电力变换***由电源100、电力变换装置200、负载300构成。电源100是直流电源，向电力变换装置200供给直流电力。电源100能够由各种电源构成，例如，能够由直流***、太阳能电池、蓄电池构成，也可以由与交流***连接的整流电路、AC/DC转换器构成。另外，也可以使电源100由将从直流***输出的直流电力变换为规定的电力的DC/DC转换器构成。
电力变换装置200是连接在电源100和负载300之间的三相逆变器，将从电源100供给的直流电力变换为交流电力，向负载300供给交流电力。电力变换装置200如图7所示，具备：主变换电路201，其将直流电力变换为交流电力而输出；以及控制电路203，其将对主变换电路201进行控制的控制信号向主变换电路201输出。
负载300是由从电力变换装置200供给的交流电力进行驱动的三相电动机。此外，负载300不限定于特定的用途，是搭载于各种电气设备的电动机，例如，用作面向混合动力汽车、电动汽车、铁路车辆、电梯或者空调设备的电动机。
以下，对电力变换装置200详细地进行说明。主变换电路201具备开关元件和续流二极管(未图示)，通过使开关元件进行通断，从而将从电源100供给的直流电力变换为交流电力，向负载300供给。主变换电路201的具体的电路结构存在各种结构，但本实施方式涉及的主变换电路201是两电平的三相全桥电路，能够由6个开关元件和与各个开关元件逆并联的6个续流二极管构成。主变换电路201的各开关元件和各续流二极管的至少任意者应用上述实施方式1～3中的任意者所涉及的半导体装置。6个开关元件构成开关元件两个两个地串联连接而成的上下桥臂，各上下桥臂构成全桥电路的各相(U相、V相、W相)。并且，各上下桥臂的输出端子即主变换电路201的3个输出端子与负载300连接。
另外，主变换电路201具备对各开关元件进行驱动的驱动电路(未图示)，但驱动电路既可以内置于半导体模块202，也可以是独立于半导体模块202而另外具有驱动电路的结构。驱动电路生成对主变换电路201的开关元件进行驱动的驱动信号，供给至主变换电路201的开关元件的控制电极。具体地说，按照来自后述的控制电路203的控制信号，向各开关元件的控制电极输出将开关元件设为接通状态的驱动信号和将开关元件设为断开状态的驱动信号。在将开关元件维持为接通状态的情况下，驱动信号是大于或等于开关元件的阈值电压的电压信号(接通信号)，在将开关元件维持为断开状态的情况下，驱动信号成为小于或等于开关元件的阈值电压的电压信号(断开信号)。
控制电路203对主变换电路201的开关元件进行控制，以向负载300供给期望的电力。具体地说，基于应向负载300供给的电力，对主变换电路201的各开关元件应成为接通状态的时间(接通时间)进行计算。例如，能够通过与应输出的电压相对应地对开关元件的接通时间进行调制的PWM控制，对主变换电路201进行控制。并且，向主变换电路201所具备的驱动电路输出控制指令(控制信号)，以在各时刻向应成为接通状态的开关元件输出接通信号，向应成为断开状态的开关元件输出断开信号。驱动电路按照该控制信号，将接通信号或者断开信号作为驱动信号而向各开关元件的控制电极输出。
在本实施方式4涉及的电力变换装置中，作为主变换电路201的开关元件和续流二极管而应用实施方式1～3涉及的半导体模块，因此，能够实现可靠性的提高。
在本实施方式4中，对在两电平的三相逆变器应用本发明的实施方式的例子进行了说明，但不限定于此，能够在各种电力变换装置应用本发明的实施方式。在本实施方式4中，采用了两电平的电力变换装置，但也可以是三电平、多电平的电力变换装置，在向单相负载供给电力的情况下，也可以向单相逆变器应用本发明的实施方式。另外，在向直流负载等供给电力的情况下，也能够向DC/DC转换器、AC/DC转换器应用本发明的实施方式。
另外，应用了本发明的实施方式的电力变换装置不限定于上述的负载为电动机的情况，例如，还能够用作放电加工机、激光加工机、或感应加热烹调器、非接触器供电***的电源装置，并且，也能够用作太阳能发电***、蓄电***等的功率调节器。
此外，本发明能够在本发明的范围内对各实施方式自由地进行组合，对各实施方式适当地进行变形、省略。

Claims (6)

1.一种半导体装置，其特征在于，具备：
半导体元件，其设置于绝缘基板之上；
壳体，其设置于所述绝缘基板的外缘，具有与所述半导体元件相对的开口部；
封装树脂，其在所述壳体内对所述半导体元件进行封装；以及
盖，其阻塞所述壳体的所述开口部，
所述封装树脂不含阻燃剂，
所述盖含有阻燃剂，
在所述封装树脂和所述盖之间设置间隙，
所述盖在相对于该盖的延伸方向垂直的方向具有第2凸起部，
所述第2凸起部的下表面与所述壳体接触，
所述第2凸起部以及所述壳体具有彼此嵌合的爪部。
2.根据权利要求1所述的半导体装置，其特征在于，
所述盖在该盖的延伸方向具有与所述壳体接触的第1凸起部。
3.根据权利要求2所述的半导体装置，其特征在于，
所述第1凸起部以及所述壳体分别具有彼此嵌合的爪部。
4.根据权利要求1至3中任一项所述的半导体装置，其特征在于，
在所述壳体和所述盖之间设置有间隙。
5.根据权利要求1至3中任一项所述的半导体装置，其特征在于，
所述半导体元件至少包含SiC或者GaN。
6.一种电力变换装置，具备：
主变换电路，其具有权利要求1至5中任一项所述的半导体装置，该主变换电路对被输入的电力进行变换而输出；以及
控制电路，其将对所述主变换电路进行控制的控制信号向所述主变换电路输出。
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