CN109830568B - Method for in-situ growth of Al plasmon nano structure - Google Patents
Method for in-situ growth of Al plasmon nano structure Download PDFInfo
- Publication number
- CN109830568B CN109830568B CN201910097665.1A CN201910097665A CN109830568B CN 109830568 B CN109830568 B CN 109830568B CN 201910097665 A CN201910097665 A CN 201910097665A CN 109830568 B CN109830568 B CN 109830568B
- Authority
- CN
- China
- Prior art keywords
- algan
- based material
- plasmon
- situ
- mocvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention belongs to the technical field of semiconductors, and relates to a method for in-situ growth of an Al plasmon nanometer structure. According to the method for in-situ growth of the Al plasmon nano structure, on the basis of growth of the AlGaN-based detector epitaxial wafer by conventional MOCVD, the Al nano structure is grown in situ on the surface of the AlGaN-based material or in an active region by utilizing the characteristic of thermal decomposition of an aluminum organic metal source, so that a plasmon effect is generated, and a new way is provided for improving the performance of the AlGaN-based detector epitaxial wafer. The invention utilizes an MOCVD method to grow Al plasmon nano-structures on the surface of the AlGaN base material or in situ in an active area, and equipment for preparing the Al plasmon nano-structures is high-temperature MOCVD equipment for growing the AlGaN material. The basic principle of the Al plasmon nanometer structure is that an aluminum metal organic source in MOCVD is subjected to thermal decomposition, and Al plasmons can grow on the surface of an AlGaN-based material or penetrate into an active region of the AlGaN-based material while an AlGaN-based epitaxial wafer grows, so that the plasmon effect of the AlGaN-based material is better exerted, and the performance of the AlGaN-based ultraviolet and deep ultraviolet detector is improved.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a method for in-situ growth of an Al plasmon nanometer structure by MOCVD.
Background
The AlGaN-based material is one of representatives of third-generation semiconductor materials, has good photoelectric properties and stability, receives wide attention, and can realize continuous adjustment of a band gap from 3.4eV to 6.2eV by adjusting components in an alloy material in a system. The ultraviolet and deep ultraviolet electric devices based on the AlGaN material have the advantages of strong stability, high temperature resistance, high pressure resistance, irradiation resistance and the like, and have wide application prospects in military and civil use. In addition, the performance of the device is far from the expected value, and researchers in recent years find that the metal nano plasmon structure can obviously improve the performance of the device, so that a new thought and a new method are provided for scientific research.
Plasmon resonance refers to a phenomenon that when the frequency of incident light is matched with the oscillation frequency of electrons in metal, resonance coupling is generated, the energy of photons is rapidly transmitted to the metal, and then the energy is transmitted to a semiconductor by the metal. In recent years, the research of plasmons is paid more and more attention by researchers, so that many achievements are obtained in the aspects of theory and experiment, and a new method is provided for improving the performance of semiconductor photoelectric devices.
Al is the most ideal metal material for realizing the plasmon enhancement effect of AlGaN-based ultraviolet and deep ultraviolet photoelectric detectors, has the advantages of high resonance frequency, low price and wide source, and is a plasmon material with higher practical value. However, the Al atom has a high viscosity coefficient and a weak migration ability, so that the preparation of the nano structure is difficult. At present, two methods for preparing the Al nano structure can be mainly classified into two methods, one method is based on photoetching patterns and matching with vacuum evaporation, and the other method is directly obtained by an optimized vacuum evaporation process. The lithography technology in the first method includes electron beam lithography, nanosphere lithography, nanoimprint lithography, etc., and the nanostructure obtained by the method has a more regular pattern, but is generally limited in size and larger in size, which is not favorable for fully exerting the gain effect of plasmons. The second method, such as oblique angle evaporation, can be directly obtained by metal evaporation, has simple process, can adjust the particle size according to the evaporation time, but is difficult to realize the nanometer structure with repeatability, uniform size and uniform distribution. However, the two preparation methods have a common problem that the Al nanostructure can only be prepared on the surface of the device, the Al nanostructure is difficult to penetrate into the active region of the device, and large energy loss exists, so that the gain effect of the plasmon cannot be maximized.
Disclosure of Invention
The invention aims to provide a method for growing an Al plasmon nano structure in situ, which utilizes an MOCVD method to grow a nitride material and simultaneously grow the Al plasmon nano structure in situ, and can prepare the Al plasmon nano structure on the surface of an AlGaN material or in an active region.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
a method of in-situ growth of Al plasmonic nanostructures, comprising the steps of:
step 1, growing AlGaN-based material on a substrate;
and 2, preparing the Al nano structure on the AlGaN-based material in situ by using an MOCVD method.
In the above technical solution, the preparation method may further include step 3, growing a layer of AlGaN-based material.
In the above technical solution, step 2 prepares the Al nanostructure on the surface of the AlGaN-based material or in the active region of the AlGaN-based material by using an MOCVD method.
In the above technical solution, the substrate is sapphire, silicon or silicon carbide.
In the above technical solution, the method for growing the AlGaN-based material in steps 1 and 3 is an MOCVD method.
In the above technical scheme, the MOCVD method is a high-temperature MOCVD method.
In the above technical scheme, the raw material for preparing the Al nanostructure in step 2 is an aluminum metal organic source.
In the above technical solution, the method for in-situ growth of the Al plasmonic nanostructure specifically includes the following steps:
step 1, growing AlGaN-based material
Growing an AlGaN-based material on a substrate by using an MOCVD method;
Stopping the introduction of NH3And a metal source with a carrier gas H2Taking the residual gas out of the cavity, adjusting the temperature of the reaction chamber to 800 ℃, stabilizing the temperature for 1-2min, starting the aluminum metal organic source, continuing for 5-60s, and closing the aluminum sourceIn the absence of NH3And cooling in the atmosphere to finish the growth of the Al nano structure.
In the above technical solution, the preparation method may further include step 3, growing a layer of AlGaN-based material.
The invention has the following beneficial effects:
according to the method for in-situ growth of the Al plasmon nano structure, on the basis of growth of an AlGaN-based detector epitaxial wafer by conventional MOCVD, the Al nano structure is grown on the surface of an AlGaN-based material or an active region by utilizing the characteristic of thermal decomposition of an aluminum organic metal source, a plasmon effect is generated, and a new way is provided for improving the performance of the AlGaN-based detector.
The invention provides a device for growing Al plasmon nanometer structures on the surface of an AlGaN base material or in an active region in situ by utilizing an MOCVD method, wherein the device for preparing the Al plasmon structures is high-temperature MOCVD equipment for growing the AlGaN material. The basic principle of the in-situ preparation of the Al plasmon nano structure is that an aluminum metal organic source in MOCVD is subjected to thermal decomposition, and Al plasmons can grow on the surface of an AlGaN-based material or penetrate into an active region of the AlGaN-based material while an AlGaN-based epitaxial wafer grows, so that the plasmon effect of the AlGaN-based material can be better exerted, and the performance of an AlGaN-based ultraviolet and deep ultraviolet detector is improved.
Drawings
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
FIG. 1 is a flow chart of MOCVD in-situ preparation of Al plasmonic nanostructures provided by the present invention;
FIG. 2 is a schematic structural diagram of the present invention for in-situ preparation of Al nanostructures in an active region MOCVD.
Fig. 3 is a schematic structural diagram of an Al nanostructure grown on the surface of an AlGaN-based material by using an MOCVD method according to the present invention.
Fig. 4 is an atomic force microscope morphology of an Al nanostructure grown on the surface of an AlGaN-based material by using an MOCVD method according to the present invention.
Detailed Description
The invention provides a method for in-situ growth of an Al plasmon nano structure, which comprises the following steps:
step 1, growing AlGaN-based material on a substrate;
and 2, preparing the Al nano structure on the AlGaN-based material in situ by using an MOCVD method.
Step 3, regrowing a layer of AlGaN base material.
It is preferable that: and 2, preparing the Al nano structure on the surface of the AlGaN-based material or in an active region of the AlGaN-based material by using an MOCVD method.
It is preferable that: the substrate is sapphire, silicon or silicon carbide.
It is preferable that: the method for growing the AlGaN-based material in the steps 1 and 3 is an MOCVD method.
It is preferable that: the MOCVD method is a high-temperature MOCVD method.
It is preferable that: and 2, preparing the Al nano structure by using an aluminum metal organic source as a raw material.
Further preferably, the method for in-situ growth of the Al plasmonic nanostructure specifically comprises the following steps:
step 1, growing AlGaN-based material
Growing an AlGaN-based material on a substrate by using an MOCVD method;
Stopping the introduction of NH3And a metal source with a carrier gas H2Taking the residual gas out of the cavity, adjusting the temperature of the reaction chamber to 800 ℃, stabilizing the temperature for 1-2min, starting the aluminum metal organic source, continuing for 5-60s, closing the aluminum source, and keeping the temperature until no NH exists3And cooling in the atmosphere to finish the growth of the Al nano structure. The preparation method is shown in a flow chart in figure 1.
Step 3, regrowing a layer of AlGaN base material by using an MOCVD method.
Example 1
Step 1, growing AlGaN-based material
Growing an AlGaN-based material on a sapphire substrate by using an MOCVD method;
Stopping the introduction of NH3And a metal source with a carrier gas H2Taking the residual gas out of the cavity, adjusting the temperature of the reaction chamber to 500 ℃, stabilizing the temperature for 2min, starting aluminum metal organic source trimethyl aluminum, continuing for 60s, closing the aluminum source, and keeping the temperature in the absence of NH3Cooling in the atmosphere to finish the growth of the Al nano structure; the structure and the appearance of the structure are respectively shown in fig. 3 and fig. 4.
Example 2
Step 1, growing AlGaN-based material
Growing an AlGaN-based material on a sapphire substrate by using an MOCVD method;
Stopping the introduction of NH3And a metal source with a carrier gas H2Taking the residual gas out of the cavity, adjusting the temperature of the reaction chamber to 800 ℃, stabilizing the temperature for 1min, starting aluminum metal organic source trimethyl aluminum for 10s, closing the aluminum source, and keeping the temperature in the absence of NH3Cooling in the atmosphere to finish the growth of the Al nano structure;
and 3, regrowing a layer of AlGaN base material by using an MOCVD method.
The in-situ preparation of the Al nanostructure in the active region MOCVD obtained in this embodiment is specifically described in detail with reference to fig. 2 as follows:
a desired substrate 21 of epitaxial AlGaN material, C-plane sapphire substrate, is selected.
The first AlGaN epitaxial layer 22 is grown by a two-step growth method using a high-temperature MOCVD technique.
And preparing the Al nano structure 23 on the AlGaN layer in situ by using an MOCVD epitaxial technology in a mode of a single-pass aluminum metal organic source.
And continuously growing a second AlGaN material epitaxial layer 24 on the Al nano structure by using the MOCVD epitaxial technology.
The method is not limited to the embodiment, and the method for preparing the Al plasmon nanometer structure by the MOCVD method can also effectively improve the performances of the AlGaN Schottky structure, the PN structure and the PIN structure detector. The method of the invention improves the performance of the AlGaN detector by preparing the Al plasmon nanometer structure in situ on the basis of the conventional MOCVD epitaxial AlGaN material and acting on the surface or active region of the device.
The substrate used in the above embodiments may be replaced with other substrates defined above, which are not illustrated here.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (2)
1. A method for in-situ growth of Al plasmon nanometer structures is characterized by comprising the following steps:
step 1, growing AlGaN-based material
Growing an AlGaN-based material on a substrate by using an MOCVD method;
step 2, preparing Al nano structure on AlGaN-based material surface or active region in situ
Stopping the introduction of NH3And a metal source with a carrier gas H2Taking the residual gas out of the cavity, adjusting the temperature of the reaction chamber to 800 ℃, stabilizing the temperature for 1-2min, starting the aluminum metal organic source, continuing for 5-60s, closing the aluminum source, and keeping the temperature until no NH exists3Cooling in the atmosphere to finish the growth of the Al nano structure;
the basic principle of the method for in-situ growth of the Al plasmon nano structure is that an aluminum metal organic source in MOCVD is subjected to thermal decomposition, and Al plasmons grow on the surface of an AlGaN-based material or penetrate into an active region of the AlGaN-based material while an AlGaN-based epitaxial wafer grows, so that the plasmon effect of the AlGaN-based material is better exerted, and the performance of the AlGaN-based ultraviolet and deep ultraviolet detector is improved.
2. The method for in-situ growth of Al plasmonic nanostructures according to claim 1, wherein the method comprises step 3, regrowing a layer of AlGaN based material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910097665.1A CN109830568B (en) | 2019-01-31 | 2019-01-31 | Method for in-situ growth of Al plasmon nano structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910097665.1A CN109830568B (en) | 2019-01-31 | 2019-01-31 | Method for in-situ growth of Al plasmon nano structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109830568A CN109830568A (en) | 2019-05-31 |
| CN109830568B true CN109830568B (en) | 2021-03-30 |
Family
ID=66861945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910097665.1A Active CN109830568B (en) | 2019-01-31 | 2019-01-31 | Method for in-situ growth of Al plasmon nano structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109830568B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005003846A1 (en) * | 2004-02-02 | 2005-10-27 | Nanosolar, Inc., Palo Alto | Photovoltaic device e.g. solar cell, has insulating inorganic nanostructured template having regular template elements having specific properties, and charge transfer materials differing in lowest unoccupied molecular orbital |
| CN102418080A (en) * | 2011-11-21 | 2012-04-18 | 南开大学 | Preparation method and application of texture structure ZnO thin film on glass substrate |
| CN103247709A (en) * | 2013-05-23 | 2013-08-14 | 中国科学院长春光学精密机械与物理研究所 | Method for enhancing responsivity of AlGaN-based deep ultraviolet detector |
| CN103928579A (en) * | 2014-04-22 | 2014-07-16 | 东南大学 | Ultraviolet LED |
| CN108231924A (en) * | 2018-02-28 | 2018-06-29 | 华南理工大学 | It is grown in non polarity A lGaN base MSM type ultraviolet detectors in r surface sapphire substrates and preparation method thereof |
| CN109713083A (en) * | 2018-12-29 | 2019-05-03 | 中国科学院长春光学精密机械与物理研究所 | A kind of method that growth in situ Al phasmon improves AlGaN base PIN type detector performance |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106299013B (en) * | 2016-10-31 | 2020-04-14 | 京东方科技集团股份有限公司 | Photodiode, preparation method thereof and X-ray detection substrate |
| CN108807631A (en) * | 2018-05-03 | 2018-11-13 | 五邑大学 | A kind of LED epitaxial wafer and preparation method thereof of double mirror surface structures |
-
2019
- 2019-01-31 CN CN201910097665.1A patent/CN109830568B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102005003846A1 (en) * | 2004-02-02 | 2005-10-27 | Nanosolar, Inc., Palo Alto | Photovoltaic device e.g. solar cell, has insulating inorganic nanostructured template having regular template elements having specific properties, and charge transfer materials differing in lowest unoccupied molecular orbital |
| CN102418080A (en) * | 2011-11-21 | 2012-04-18 | 南开大学 | Preparation method and application of texture structure ZnO thin film on glass substrate |
| CN103247709A (en) * | 2013-05-23 | 2013-08-14 | 中国科学院长春光学精密机械与物理研究所 | Method for enhancing responsivity of AlGaN-based deep ultraviolet detector |
| CN103928579A (en) * | 2014-04-22 | 2014-07-16 | 东南大学 | Ultraviolet LED |
| CN108231924A (en) * | 2018-02-28 | 2018-06-29 | 华南理工大学 | It is grown in non polarity A lGaN base MSM type ultraviolet detectors in r surface sapphire substrates and preparation method thereof |
| CN109713083A (en) * | 2018-12-29 | 2019-05-03 | 中国科学院长春光学精密机械与物理研究所 | A kind of method that growth in situ Al phasmon improves AlGaN base PIN type detector performance |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109830568A (en) | 2019-05-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11114579B2 (en) | Method for preparing ultrathin two-dimensional nanosheets and applications thereof | |
| CN110578171B (en) | Method for manufacturing large-size low-defect silicon carbide single crystal | |
| CN105826362A (en) | Gallium-oxide nanowire array and preparation method thereof | |
| CN111118471A (en) | Preparation method of high-quality polycrystalline diamond film | |
| CN110364584A (en) | Deep ultraviolet MSM detector and preparation method based on local surface phasmon effect | |
| CN108511324B (en) | Epitaxial growth method of gamma-phase indium selenide nanosheets | |
| CN110172732A (en) | The method for preparing nitride single crystal substrates using transition metal nitride sacrificial layer | |
| CN113089093B (en) | Method for forming diamond semiconductor structure | |
| CN109830568B (en) | Method for in-situ growth of Al plasmon nano structure | |
| CN110284198B (en) | Molecular beam epitaxial growth method for controlling GaN nanowire structure and morphology | |
| Ren et al. | Selective-area InAsSb nanowires on InP for 3–5 μm mid-wavelength infrared optoelectronics | |
| CN108330536B (en) | Preparation method of PA-MBE homoepitaxy high-quality GaN monocrystal film | |
| CN109713083A (en) | A kind of method that growth in situ Al phasmon improves AlGaN base PIN type detector performance | |
| CN111312851A (en) | Preparation method of AlN nanowire solar blind area detector | |
| CN108511322A (en) | A method of preparing GaN film in two-dimentional graphite substrate | |
| CN115332057A (en) | Epitaxial growth method for improving crystallization quality of boron nitride two-dimensional material | |
| CN106783553B (en) | III-nitride micro-column structure with graphene/dielectric material as composite substrate and preparation method thereof | |
| CN113802177B (en) | Epitaxial method for improving crystal quality of AlGaN deep ultraviolet detector material | |
| Wang et al. | Improved epitaxy of ZnO films by regulating the layers of graphene | |
| CN114420563A (en) | Diamond-based nitride semiconductor device and preparation method thereof | |
| CN109166788B (en) | Method for directly epitaxially growing germanium virtual substrate on silicon substrate | |
| CN111807315B (en) | Conductive oxide plasmon nanometer optical antenna and preparation method thereof | |
| Vostokov et al. | Photoluminescence of self-assembled GeSi/Si (001) nanoislands of different shapes | |
| CN115626639B (en) | Large-area boron nitride/graphene vertical heterojunction film and preparation method thereof | |
| CN109841501A (en) | A kind of high quality semi-polarity two-dimensional ultrathin indium nitrogen/gallium nitrogen laminated construction and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |