CN114420563A - Diamond-based nitride semiconductor device and preparation method thereof - Google Patents
Diamond-based nitride semiconductor device and preparation method thereof Download PDFInfo
- Publication number
- CN114420563A CN114420563A CN202210061589.0A CN202210061589A CN114420563A CN 114420563 A CN114420563 A CN 114420563A CN 202210061589 A CN202210061589 A CN 202210061589A CN 114420563 A CN114420563 A CN 114420563A
- Authority
- CN
- China
- Prior art keywords
- diamond
- nitride semiconductor
- buffer layer
- aluminum nitride
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 175
- 239000010432 diamond Substances 0.000 title claims abstract description 175
- 239000004065 semiconductor Substances 0.000 title claims abstract description 77
- 150000004767 nitrides Chemical class 0.000 title claims abstract description 71
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 82
- 239000000758 substrate Substances 0.000 claims abstract description 82
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 73
- 238000000151 deposition Methods 0.000 claims abstract description 55
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 53
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 230000008021 deposition Effects 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- 238000005137 deposition process Methods 0.000 claims description 12
- 238000000259 microwave plasma-assisted chemical vapour deposition Methods 0.000 claims description 12
- 230000003746 surface roughness Effects 0.000 claims description 8
- 229910017083 AlN Inorganic materials 0.000 claims description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 6
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical group [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 6
- 239000013077 target material Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 125000005842 heteroatom Chemical group 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000011161 development Methods 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 48
- 238000000227 grinding Methods 0.000 description 18
- 238000005516 engineering process Methods 0.000 description 15
- 239000007789 gas Substances 0.000 description 14
- 238000005530 etching Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 238000005498 polishing Methods 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 238000000089 atomic force micrograph Methods 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 229910052594 sapphire Inorganic materials 0.000 description 6
- 239000010980 sapphire Substances 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 5
- 238000004626 scanning electron microscopy Methods 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000012876 topography Methods 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000004570 mortar (masonry) Substances 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 238000001237 Raman spectrum Methods 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum ions Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001941 electron spectroscopy Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000002065 inelastic X-ray scattering Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
- H01L29/66037—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66045—Field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1602—Diamond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
Abstract
The invention relates to the technical field of semiconductors, in particular to a diamond-based nitride semiconductor device and a preparation method thereof, wherein the preparation method of the diamond-based nitride semiconductor device comprises the following steps: providing a diamond substrate; forming an aluminum nitride buffer layer on the diamond substrate; forming a nitride semiconductor stacked structure on the aluminum nitride buffer layer; and forming the aluminum nitride buffer layer by adopting a high-temperature radio frequency magnetron sputtering deposition method. The diamond-based nitride semiconductor device provided by the invention enables the nitride semiconductor laminated structure to grow on the diamond substrate which can transversely radiate heat and is provided with the aluminum nitride buffer layer, thereby greatly improving the power conversion efficiency of gallium nitride-based power electronics, accelerating more application and development of the gallium nitride-based device and being more beneficial to industrialized production.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a diamond-based nitride semiconductor device and a preparation method thereof.
Background
Modern human society relies heavily on electricity as an energy source. With the increasing total energy consumption and energy sources, efficient electric energy conversion is of great importance. With the development of silicon technology, the efficiency and cost of power management are steadily increasing.
However, as the power conversion efficiency of silicon-based power transistors has reached the theoretical limit, the speed of innovation is significantly slowed. GaN, as an emerging candidate for power electronics and radio frequency electronics, has incomparable advantages in the aspects of wide bandgap, high electron mobility, high temperature stability, etc., and has excellent high-power processing capability. Although research applications of gallium nitride-based power and Radio Frequency (RF) transistors are still in the preliminary stage, power management of gallium nitride-based devices can reduce energy conversion losses with a smaller area than that of silicon-based devices.
However, to date, power conversion based on silicon power transistors is still the dominant technology, and GaN-based power electronics are not competitive except for a small range of applications due to the high cost of the substrate and thermal management issues at high operating voltages.
The GaN device substrate material such as sapphire, Si and SiC which is commercially available at present has lower thermal conductivity (40-400 W.m)－1·K－1) The performance of GaN devices is severely limited by heat dissipation problems. Meanwhile, in the conventional growth of the gallium nitride epitaxial layer, in order to prevent the cracking and warpage of the wafer due to the large tensile stress of the epitaxial layer after cooling and to reduce the threading dislocation density, by introducing buffer layers AlN, AlGaN, SiC, in the middle of the sapphire substrate or the silicon substrate and the gallium nitride epitaxial layer,AlAs、ZnO、Al2O3And the success rate of the growth of the gallium nitride epitaxial layer is increased, but the problem of poor heat dissipation also exists.
In order to improve the heat management capability of the gallium nitride-based power device, the heat conductivity is higher (800-2000 W.m)－1·K－1) The diamond material as a substrate has become a hot spot of current research.
In recent years, diamond-based GaN HEMT devices have made great progress in the aspects of substrate material growth, diamond and GaN device integration technology, GaN epitaxy technology and the like, the performance of diamond-based GaN power devices is continuously improved, and in 2013, D.C.Dumka et al report that the output power density of the devices reaches 7.9 W.mm under 10GHz and 40V bias voltage－1The Power Added Efficiency (PAE) exceeds 46% and the power gain exceeds 11 dB. In 2015, P.C. Chao et al reported that the maximum power density of the device could reach 11 W.mm at 10GHz operating frequency－1The corresponding PAE was 51%.
Thus, diamond based gallium nitride devices are very attractive in high power applications, such as commercial base stations, military radars, satellite communications, weather radars, and the like. These high power solutions all require the use of the high thermal conductivity of diamond to achieve excellent cooling. Direct growth of gallium nitride on diamond is challenging, however, because growth of group iii nitride semiconductors typically requires a substrate with a lattice and Coefficient of Thermal Expansion (CTE) matched thereto.
Diamond grown by chemical vapor deposition is generally polycrystalline, and therefore, it is not easy to grow a single-crystal group iii nitride thin film thereon, gallium nitride has a wurtzite crystal structure, and diamond has a cubic phase structure, so that there is lattice mismatch between gallium nitride and polycrystalline diamond, and the lattice mismatch between diamond and gallium nitride is about 11%. Even for single crystal diamond, the biggest challenges in growing gallium nitride are lattice mismatch and CTE mismatch. Gallium nitride has a higher CTE than diamond, and the CTE mismatch can cause significant tensile strain in the gallium nitride epitaxial layers during cooling after growth is complete, causing cracks, which hinder the fabrication of two-dimensional electroluminescent devices.
In order to obtain high-quality epitaxial layers of gallium nitride, in addition to intermediate or buffer layer techniques, there are also lateral epitaxial growth (ELOG) techniques, which are carried out by introducing SiO with different shapes on a substrate2Or Si3N4Masking the film and promoting the lateral epitaxial growth of the GaN material. However, by this method, buried cracks and voids may occur in the gallium nitride epitaxial layer.
Therefore, for example, in the method for integrating diamond and gallium nitride, which is filed under the application number of 201911054671.5, the 2 nd, 25 th of 2020 discloses a method for integrating diamond and gallium nitride, an aluminum hydroxide bonding layer formed by hydrolyzing aluminum nitride is used for bonding a gallium nitride epitaxial layer and a diamond substrate together, compared with the conventional method for bonding gallium nitride and a diamond substrate together by using a bonding material with low thermal conductivity, the method has the advantages that the bonding process difficulty is reduced, the risk of damaging the gallium nitride epitaxial layer is reduced, and the heat dissipation effect of diamond on a gallium nitride semiconductor device can be improved.
Disclosure of Invention
In order to solve the problems mentioned in the background art that the existing substrate materials of GaN devices such as sapphire, Si and SiC have lower thermal conductivity and the lattice mismatch between the substrate material and nitride semiconductor exists when diamond is used as the substrate,
the invention provides a preparation method of a diamond-based nitride semiconductor device, which comprises the following steps:
providing a diamond substrate;
forming an aluminum nitride buffer layer on the diamond substrate;
forming a nitride semiconductor stacked structure on the aluminum nitride buffer layer;
the aluminum nitride buffer layer is formed by adopting a high-temperature radio frequency magnetron sputtering deposition method, and the deposition temperature adopted by the high-temperature radio frequency magnetron sputtering deposition method is more than 800 ℃.
Further, the deposition temperature is preferably 800 ℃ or more and 1000 ℃ or less.
Further, the root mean square roughness of the surface of the diamond substrate for forming the aluminum nitride buffer layer is below 1nm, and the diamond substrate is prepared by adopting the following steps:
providing a silicon substrate;
depositing a diamond film on the silicon substrate by adopting a microwave plasma-assisted chemical vapor deposition method;
and carrying out flattening treatment on the diamond film.
Further, in the production method, the silicon substrate is subjected to ultrasonic pretreatment in a diamond powder suspension before the diamond thin film is deposited.
Further, the microwave output power of the diamond film adopted in the deposition process is more than 3800W and less than 4800W, the pressure of the diamond film adopted in the deposition process is more than 140Torr and less than 160Torr, the substrate temperature of the diamond film adopted in the deposition process is more than 800 ℃ and less than 900 ℃, the total gas flow of the diamond film adopted in the deposition process is 500sccm, and the methane concentration of the diamond film adopted in the deposition process is more than 3% and less than 5%.
Further, the target material is an aluminum target material during deposition of the aluminum nitride buffer layer, and the gas introduced during deposition of the aluminum nitride buffer layer is N2And Ar, said N2Account for (N)2+ Ar) gas percentage is 20% to 100%.
Further, the deposition temperature is 800 ℃ or higher and 1000 ℃ or lower, the sputtering pressure used in the deposition process of the aluminum nitride buffer layer is 3mTorr or higher and 6mTorr or lower, and the radio frequency power used in the deposition process of the aluminum nitride buffer layer is 100W or higher and 500W or lower.
Further, the nitride semiconductor laminated structure includes at least a first nitride semiconductor layer and a second nitride semiconductor layer different in composition from the first nitride semiconductor layer;
two-dimensional electron gas is generated at a hetero interface of the first nitride semiconductor layer and the second nitride semiconductor layer.
Further, the first nitride semiconductor layer is a gallium nitride layer, and the second nitride semiconductor layer is an aluminum gallium nitride layer.
The present invention provides a diamond-based nitride semiconductor device, including:
a diamond substrate;
an aluminum nitride buffer layer on the diamond substrate;
a nitride semiconductor stacked structure on the aluminum nitride buffer layer;
the aluminum nitride buffer layer is formed by adopting a high-temperature radio frequency magnetron sputtering deposition method, and the deposition temperature adopted by the high-temperature radio frequency magnetron sputtering deposition method is more than 800 ℃.
Further, the deposition temperature is preferably 800 ℃ or more and 1000 ℃ or less.
Further, the thermal conductivity of the diamond substrate is 2000 W.m-1·K-1As described above, the root mean square roughness of the surface of the diamond substrate for forming the aluminum nitride buffer layer is 1nm or less, and the thickness of the diamond substrate is 50 μm or more and 500 μm or less.
Further, the surface roughness of aluminium nitride buffer layer is more than 0.8nm and 2nm below, the thickness of aluminium nitride buffer layer is more than 20nm and 2um below.
Compared with the prior art, the diamond-based nitride semiconductor device and the preparation method thereof provided by the invention have the following beneficial effects:
the aluminum nitride buffer layer is deposited on the diamond substrate through high-temperature radio frequency magnetron sputtering, so that the nitride semiconductor laminated structure can grow on the diamond substrate which can transversely radiate heat and is provided with the aluminum nitride buffer layer, thereby greatly improving the power conversion efficiency of gallium nitride-based power electronics and accelerating more application and development of gallium nitride-based devices;
additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure and methods particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic structural view of a diamond-based nitride semiconductor device according to the present invention;
FIG. 2 is a schematic view showing the steps of a method for manufacturing a diamond-based nitride semiconductor device according to the present invention;
fig. 3 is a schematic diagram of a diamond film grown by MPACVD method according to the present invention, (a) is a macro photo; (b) is XRD diffraction pattern; (c) is a Raman spectrogram; (d) is an SEM surface topography picture;
FIG. 4(a) is an SEM surface topography of a diamond film grown by the MPACVD method; (b) is an SEM surface topography map after etching the surface by SF6(30sccm,10min, 500W); (c) the macroscopic picture of the polished diamond is obtained; (d) is an atomic force microscope image after polishing;
FIG. 5(a) is an omega XRD scan of the aluminum nitride (002) peak of a sputtered aluminum nitride film at a deposition temperature of 1000 ℃;
FIG. 5(b) is an atomic force microscope image of a sputtered aluminum nitride film at a deposition temperature of 1000 deg.C;
FIG. 6(a) is an omega XRD scan of the aluminum nitride (002) peak of a sputtered aluminum nitride film at a deposition temperature of 900 ℃;
FIG. 6(b) is an atomic force microscope image of a sputtered aluminum nitride film at a deposition temperature of 900 deg.C;
FIG. 7(a) is an omega XRD scan of the aluminum nitride (002) peak of a sputtered aluminum nitride film at a deposition temperature of 800 ℃;
FIG. 7(b) is an atomic force microscope image of a sputtered aluminum nitride film at a deposition temperature of 800 ℃;
fig. 8 is a schematic structural view of another diamond-based nitride semiconductor device provided by the present invention;
FIG. 9 is a flow chart of diamond based gallium nitride heterostructure fabrication;
FIG. 10 (a) is a schematic structural view of GaN 2DEG on sapphire; (b) the output characteristic diagram of AlGaN/GaN HEMTs under different gate voltages is obtained by sequentially applying the gate voltage from-4.0V to 3.0V in 8 steps from the curve at the lowest part; (c) the transition curve for HEMTs at a drain voltage of 5V is shown.
Reference numerals:
10 diamond substrate 20 aluminum nitride buffer layer 30 nitride semiconductor stacked structure
31 first nitride semiconductor layer 32 second nitride semiconductor layer
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Diamond based gallium nitride devices are very attractive in high power applications, such as in commercial base stations, military radars, satellite communications, weather radars, and the like. These high power solutions all require the use of the high thermal conductivity of diamond to achieve excellent cooling.
Direct growth of gallium nitride on diamond is challenging, however, because the growth of group iii nitride semiconductors typically requires a substrate with a lattice and Coefficient of Thermal Expansion (CTE) matched thereto, whereas chemical vapor deposition grown diamond is typically polycrystalline and therefore cannot readily grow monocrystalline group iii nitride films thereon;
for example: gallium nitride has a wurtzite crystal structure and diamond has a cubic phase structure, so there is about 11% lattice mismatch between gallium nitride and polycrystalline diamond, even for single crystal diamond, the greatest challenge in growing gallium nitride thereon is lattice mismatch and CTE mismatch;
meanwhile, gallium nitride has a higher CTE than diamond, and the CTE mismatch can cause a large tensile strain in the gallium nitride epitaxial layer during cooling after growth is completed, causing cracks, thereby hindering the fabrication of semiconductor devices such as two-dimensional electroluminescent devices;
therefore, growth of gallium nitride on the diamond substrate 10 requires a buffer layer structure, i.e., aluminum nitride or the like; however, in the conventional growth method of the buffer layer structure, bonding of gallium nitride and the diamond substrate 10 by using a bonding material with low thermal conductivity is widely adopted, but the bonding process is difficult, time-consuming and complicated when a thick buffer layer is grown, and the like.
The various embodiments, comparative examples, provided by this disclosure are discussed in detail below, however, it should be appreciated that many applicable concepts provided by this disclosure can be implemented in a variety of specific environments, and the discussed embodiments are merely illustrative and do not limit the scope of the disclosure.
To this end, as shown in fig. 1, the present invention provides an embodiment of a diamond-based nitride semiconductor device, including:
a diamond substrate 10;
an aluminum nitride buffer layer 20 on the diamond substrate 10;
a nitride semiconductor laminated structure 30 formed on the aluminum nitride buffer layer 20;
forming the aluminum nitride buffer layer 20 by adopting a high-temperature radio frequency magnetron sputtering deposition method, wherein the deposition temperature adopted by the high-temperature radio frequency magnetron sputtering deposition method is more than 800 ℃;
preferably, the deposition temperature is preferably 800 ℃ or higher and 1000 ℃ or lower, for example, 850 ℃, 900 ℃, 950 ℃, 1000 ℃, or the like is selected.
Because the material parameters between the gallium nitride and the diamond are not matched, including lattice constant and CTE mismatch, and the integration of the gallium nitride HEMT structure and the diamond substrate 10 is difficult to realize high-efficiency heat dissipation, in order to reduce the lattice mismatch and CTE mismatch, an aluminum nitride buffer layer 20 is deposited on the diamond substrate 10 through a high-temperature radio frequency magnetron sputtering system, and then a nitride semiconductor laminated structure 30 is epitaxially grown on the aluminum nitride buffer layer 20; and the deposition temperature of the aluminum nitride buffer layer 20 on the diamond substrate 10 is optimized to obtain a high-quality nitride semiconductor device.
As shown in fig. 2, the present invention provides a method for manufacturing a nitride semiconductor device as disclosed in the above embodiment, comprising:
providing a diamond substrate 10, depositing the diamond substrate 10 on a silicon substrate by adopting a Microwave Plasma Assisted Chemical Vapor Deposition (MPACVD) technology to obtain a high-quality diamond film, and flattening the film;
in this example, before deposition of the diamond film, a 3 mm thick 2-inch diameter silicon substrate was subjected to ultrasonic bath pretreatment for 30 minutes in a suspension containing 50 μm diameter diamond powder for increasing nucleation density;
in other embodiments, the size of the substrate, that is, the size of the diamond, may be replaced, and is not limited to a diamond film formed on a 2-inch silicon substrate.
After the silicon substrate is pretreated, the silicon substrate is sequentially placed into acetone and deionized water for ultrasonic cleaning for 5min, and N is used2Blowing the gas to dry, and finally, putting the treated silicon into a molybdenum table to deposit a diamond film;
the parameters for growing the diamond film by adopting the Microwave Plasma Assisted Chemical Vapor Deposition (MPACVD) technology are as follows: in a 2.45GHz (6kW) microwave plasma chemical vapor deposition system, a polycrystalline diamond film was grown at a growth rate of about 8 μm/hr, with a microwave output of 4400 watts, a pressure of 150Torr, a substrate temperature of 870 ℃, a total gas flow of 500sccm, and a high purity methane concentration of 3%;
the morphology and crystallinity of the deposited diamond film can be characterized by X-ray diffraction, Raman spectroscopy and scanning electron microscopy techniques:
referring to FIG. 3(a), a photograph of a 2-inch 400 μm thick diamond film obtained on a 3 mm thick silicon substrate is shown;
referring to the XRD spectrum of the sample shown in fig. 3(b), the polycrystalline diamond phase is clearly shown by the (111), (220), (311), (400) and (311) reflection peaks shown in the XRD pattern, with the strongest peak being oriented at (111);
the Raman spectrum of the diamond film grown by MPACVD is shown in FIG. 3(c), from which it is clear that it is 1333.48cm-1A sharp and intense diamond peak is formed, no non-diamond peak is formed, and no sp2 phase carbon impurity is obvious;
the surface topography of the diamond film sample as measured by Scanning Electron Microscopy (SEM) is shown with reference to fig. 3 (d).
The diamond film prepared by the microwave plasma-assisted chemical vapor deposition (MPACVD) technology has the thermal conductivity of 2000 W.m-1·K-1The average grain size of the diamond film is 20 micrometers, the thickness of the diamond film is 402-413 micrometers, and the thickness deviation is within 5%;
in some other embodiments, the average grain size of the diamond film may be 20 μm or more and 80 μm or less, and the thickness of the diamond film may be 338 μm or more and 462 μm or less;
further, in order to reduce the surface roughness of the diamond film before epitaxy, the diamond film obtained after deposition is subjected to planarization treatment to obtain the diamond substrate 10 with a smoother surface;
wherein the planarization treatment can be selected from one or more of grinding, mechanical polishing and plasma etching;
in this embodiment, the planarization treatment is performed under the following conditions: applying 1250g of pressure to the sample, using water-based diamond slurry containing diamond abrasive particles, the size of the abrasive particles is 40 mu m, and the abrasive particles are evenly suspended in the mortar, and the rotating speed of the grinding wheel is 40 r/min; after grinding, the sample is washed with acetone and ethanol in an ultrasonic bath in sequence; plasma reactive ion etching is then applied to further smooth the diamond surface using SF-based6The etching process of gas, pressure, time and plasma power are maintained at 1.34Pa, 10min and500W, the total gas flow rate was kept constant at 30 sccm. And finally, performing mechanical polishing on the resin bond diamond grinding wheel to obtain a smooth diamond surface. The rotational speed was maintained at 1200r/min, the pressure was 1500g and the flow rate of cooling water was maintained at 10ml/min during polishing.
In yet another preferred embodiment, in order to obtain an atomically smooth surface, a 2-inch diamond film sample (fig. 4(a)) grown on silicon by MPACVD method was first ground on an iron plate using diamond mortar to prepare a flat diamond film surface, the grinding of the diamond film sample being performed on a rotating iron plate having a diameter of about 300 mm; the diamond sample is attached to a metal pressure block, the pressure block is placed on an iron plate, and grinding pressure is applied to the sample by applying a certain weight;
the parameters for grinding the diamond film sample in this example are: applying 1250g of pressure to the diamond film sample, using water-based diamond slurry containing diamond abrasive particles, wherein the abrasive particles have the size of 10 mu m and are uniformly suspended in the mortar, the rotating speed of a grinding wheel is 40r/min, the grinding time is within 12h, and after the grinding is finished, cleaning the diamond film sample by using acetone and ethanol in turn in an ultrasonic bath;
plasma reactive ion etching is then applied to further smooth the diamond surface, in the preferred embodiment, using SF-based6And 02To obtain a smooth diamond film surface, in a SF-based etching process6In the method, the pressure, time and plasma power are kept at 1.34Pa, 10min and 500W, and the total gas flow is kept constant at 30 sccm; on the basis of O2In the method, O is firstly carried out for 2.5 minutes2Then 0.5 min O2/CF4Plasma, first step using 50sccm O2Gas and a fixed plasma power of 800W at a pressure of 2 Pa, in order to increase O2Etch rate in plasma etch, second gas CF4The process was introduced and the second step used O of 40sccm2And CF of 10sccm4The plasma power was changed to 200W at 1.6 Pa.
It is apparent from the scanning electron microscope image of the cvd diamond surface after plasma etching shown in fig. 4(b) that the sample has no pits and grain boundaries, and it can be seen that the smoothness of the planarized diamond film surface is further improved, and no significant etching pits and defects are observed on the entire surface, further indicating that the chemical vapor deposition diamond surface is not damaged by the grinding process.
And finally, performing mechanical polishing on the resin bonding agent diamond grinding wheel to obtain a smooth surface of the diamond substrate 10, wherein the resin grinding wheel embedded with diamond abrasive particles is specifically adopted, the experimental device comprises a rotating table, a pressure block, a sample frame, a cooling system and a disc repairing device, the polishing wheel is placed on the rotating table, in the mechanical polishing process, the rotating speed is kept to be 1200r/min, the pressure is kept to be 1500g, and the flow rate of cooling water is kept to be 10 ml/min.
Fig. 4(c) is a photograph of 2-inch polycrystalline diamond after completion of the mechanical polishing process, and fig. 4(d) shows an atomic force microscope image of the chemical vapor deposition diamond sample after mechanical polishing.
The roughness was evaluated over an area of 5 μm × 5 μm, the surface roughness value of the polished surface was 0.278nm, and it was confirmed by electron spectroscopy (EDS) signals that the surface of the chemical vapor deposition diamond sample was free from elemental contamination from the polishing disk.
In the diamond substrate 10 obtained by the above-described planarization treatment, the root mean square roughness of the diamond substrate 10 is 1nm or less, and the thickness of the diamond substrate 10 is 280 μm or more and 350 μm or less.
In some other embodiments, the planarization treatment includes grinding and polishing, wherein the grinding process preferably removes the diamond film thickness by 50 μm or more and 100 μm or less, and the polishing process preferably removes the diamond film thickness by 8 μm or more and 12 μm or less;
in other embodiments, the types of the abrasive particles, the material and the size of the grinding disc, the etching process and the like can be correspondingly adjusted according to different diamond films;
according to the embodiment of the invention, the thickness requirement of the diamond substrate 10 can be set according to different situations, and after the growth of the diamond film is finished, corresponding matched grinding parameters are selected, so that the growth and grinding have a mutual matching effect, the overall process efficiency is improved, the quality of a final product is ensured, and the silicon substrate can be removed after the planarization treatment is finished.
And (2) depositing an aluminum nitride buffer layer 20 on the diamond substrate 10 after the planarization treatment by adopting high-temperature radio frequency magnetron sputtering deposition, wherein the temperature of the high-temperature radio frequency magnetron sputtering deposition is 1000 ℃.
Due to the mismatch of material parameters between gallium nitride and diamond, including lattice constant and CTE mismatch, the integration of the gallium nitride HEMT structure and the diamond substrate 10 is difficult to realize high-efficiency heat dissipation, in order to reduce the lattice mismatch and CTE mismatch, an aluminum nitride buffer layer 20 is deposited on the diamond substrate 10 through a high-temperature radio frequency magnetron sputtering system, and then a nitride semiconductor laminated structure 30 is epitaxially grown on the aluminum nitride buffer layer 20;
in this embodiment, an aluminum nitride buffer layer 20 is deposited on the surface of the diamond substrate 10 at 1000 ℃, during deposition, the target material is an aluminum target material, and the gas introduced during deposition of the aluminum nitride buffer layer 20 is N2And Ar, said N2And Ar in a gas volume ratio of 1:1, and N2And Ar at a total gas flow of 20sccm, wherein the aluminum ions and the nitrogen plasma form an aluminum nitride buffer layer 20 on the substrate at a working pressure of 5mTorr, the temperature is set to 1000 ℃, and the radio frequency power is 200W.
The higher peak intensity was shown by XPS analysis, demonstrating that the aluminum nitride buffer layer 20 was formed on the diamond substrate 10, that a sharp aluminum nitride peak was obtained by XRD analysis measured for 2 theta and omega of the aluminum nitride buffer layer 20 on the diamond substrate 10, that omega scan of XRD measurement was performed after 2 theta scan to obtain full width at half maximum of the aluminum nitride peak, that a highly oriented crystal structure was formed and that the aluminum nitride buffer layer 20 with a smooth surface was obtained without annealing due to in-situ high temperature conditions during sputter deposition as shown by atomic force microscopy images.
It can be seen that the aluminum nitride buffer layer 20 obtained by high temperature rf magnetron sputtering deposition at a deposition temperature above 800 c, preferably above 800 c and below 1000 c, improves the crystallinity of the aluminum nitride buffer layer 20 so that it can better grow a gallium nitride layer.
The aluminum nitride buffer layer 20 is prepared by the high-temperature radio frequency magnetron sputtering deposition technology, the surface roughness of the aluminum nitride buffer layer 20 is more than 0.8nm and less than 2nm, and the thickness of the aluminum nitride buffer layer 20 is more than 100nm and less than 250 nm.
Omega scanning by XRD measurement to obtain full width at half maximum (FWHM) of AlN (002) peak, please refer to the test results shown in FIGS. 5(a) and 5(b), which are to deposit an aluminum nitride buffer layer at a deposition temperature of 1000 ℃ on a diamond substrate, and to obtain a surface roughness of the aluminum nitride buffer layer of 0.824-1.22 nm.
Please refer to the test results of the embodiment shown in fig. 6(a) and fig. 6(b), which are to deposit the aluminum nitride buffer layer on the diamond substrate at the deposition temperature of 900 ℃, and the surface roughness of the obtained aluminum nitride buffer layer is 0.93-1.27 nm.
Please refer to the test results of the embodiment shown in fig. 7(a) and fig. 7(b), which are to deposit the aluminum nitride buffer layer on the diamond substrate at the deposition temperature of 800 ℃, and the surface roughness of the obtained aluminum nitride buffer layer is 0.976-1.49 nm.
Step (3) growing a nitride semiconductor stacked structure 30 on the aluminum nitride buffer layer 20;
the nitride semiconductor laminated structure 30 includes at least a first nitride semiconductor layer 31 and a second nitride semiconductor layer 32 having a composition different from that of the first nitride semiconductor layer 31;
a two-dimensional electron gas 33 is generated at the hetero interface of the first nitride semiconductor layer 31 and the second nitride semiconductor layer 32.
In this embodiment, referring to fig. 8, the first nitride semiconductor layer 31 is a gallium nitride layer, and the second nitride semiconductor layer 32 is an aluminum gallium nitride layer, that is, a gallium nitride layer and an aluminum gallium nitride layer are sequentially grown on the aluminum nitride buffer layer 20 by using a metal organic chemical vapor deposition method, so as to form an aluminum gallium nitride/gallium nitride heterostructure, and a two-dimensional electron gas (2EDG) is generated at the interface by polarization charge induction;
referring to fig. 9, optionally, the diamond-based nitride semiconductor device may further include the following subsequent implementation steps, for example, etching the epitaxial layer structure, fabricating each electrode, such as fabricating a specific source/drain electrode, fabricating a gate dielectric insertion layer, fabricating a gate electrode, and the like, and the above-described fabrication steps may be implemented by using a method disclosed in the prior art;
for example, the etching of the epitaxial layer structure may be to fabricate a device mesa by using a semiconductor lithography technology and/or an etching technology, and etch the surface by using a semiconductor etching technology such as Cl-based gas based Inductively Coupled Plasma (ICP) or Reactive Ion Etching (RIE), so as to isolate the mesa; repeating the step, and etching the source electrode region and the drain electrode region to form grooves; wherein the semiconductor photoetching technology comprises the steps of complete photoresist evening, soft baking, exposure, development, film hardening and the like;
the source and drain electrodes can be manufactured by defining the required regions of a source electrode and a drain electrode through a semiconductor photoetching technology in epitaxial layer structure etching, depositing source and drain electrode metals of a device through metal deposition technologies such as magnetron sputtering, electron beam evaporation and the like, and enabling a composite metal structure to be changed into alloy through high-temperature annealing to form ohmic contact. Depositing and forming a device surface insulating layer and the like by using the Plasma Enhanced Chemical Vapor Deposition (PECVD), low-pressure chemical vapor deposition (LPCVD), magnetron sputtering or electron beam evaporation and other technologies;
it should be noted that the thickness of the diamond substrate 10 and the aluminum nitride buffer layer 20 can be adaptively adjusted according to different nitride semiconductor laminated structures 30 in the embodiments of the present invention, and is not limited to the aluminum gallium nitride/gallium nitride heterostructure exemplified in the embodiments, and meanwhile, the diamond-based nitride semiconductor device provided in the present invention can be used not only for a gallium nitride HEMT, but also for a UCV detector, a gallium nitride-based Avalanche Photodiode (APD), a surface acoustic wave filter (SAW), and the like.
The specific parameters or some common methods in the above embodiments are specific embodiments or preferred embodiments of the inventive concept, but not limited thereto; those skilled in the art can adapt the same within the spirit and scope of the present invention.
Referring to fig. 10, as a comparative example, a gallium nitride-based high electron mobility transistor was fabricated on a sapphire substrate and characterized. The 2DEG layer accumulating carriers in the gallium nitride-based HEMT enhances the conductivity of the device, thereby achieving high current density. Fig. 7(a) shows an epitaxial cross section of a gallium nitride based HEMT on sapphire. Fig. 7(b) shows the current-voltage characteristics of the AlGaN/GaN HEMTs, i.e., the output characteristics of AlGaN/GaN HEMTs at different gate voltages, which are applied in 8 steps in sequence from-4.0V to 3.0V, starting from the lowermost curve. Due to the self-heating effect resulting from the lack of thermal management, the current in the saturation region decreases slightly at high gate voltages (> 1.0V-3.0V) and high drain voltages (> 10V), as shown in FIG. 7(c), which is a transition curve of HEMTs at drain voltages of 5V, with a threshold voltage of-7V.
The present invention further provides a comparison experiment, in comparison with the embodiment, when the deposition temperature is lower than 800 ℃ in the comparison experiment for depositing the aluminum nitride buffer layer 20 by using the rf magnetron sputtering deposition method, the aluminum nitride is amorphized, and thus the growth of the gallium nitride layer cannot be performed.
As can be seen from the comparison of the above comparative tests, the aluminum nitride buffer layer 20 prepared by the high-temperature radio-frequency magnetron sputtering deposition method of the present invention can better improve the defects and dislocation density generated by the growth of the aluminum nitride buffer layer 20 on the diamond substrate 10, and simultaneously, the aluminum nitride buffer layer 20 obtained by deposition has a smoother surface, and the problems of complex process and high cost caused by the bonding mode are overcome.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A method for producing a diamond-based nitride semiconductor device, the method comprising:
providing a diamond substrate;
forming an aluminum nitride buffer layer on the diamond substrate;
forming a nitride semiconductor stacked structure on the aluminum nitride buffer layer;
the method is characterized in that: the aluminum nitride buffer layer is formed by adopting a high-temperature radio frequency magnetron sputtering deposition method, and the deposition temperature adopted by the high-temperature radio frequency magnetron sputtering deposition method is more than 800 ℃.
2. The method for producing a diamond-based nitride semiconductor device according to claim 1, wherein the root mean square roughness of the surface of the diamond substrate for forming the aluminum nitride buffer layer is 1nm or less, and the diamond substrate is produced by the steps of:
providing a silicon substrate;
depositing a diamond film on the silicon substrate by adopting a microwave plasma-assisted chemical vapor deposition method;
and carrying out flattening treatment on the diamond film.
3. The method for producing a diamond-based nitride semiconductor device according to claim 2, wherein the microwave output power used in the deposition process of the diamond film is 3800W or more and 4800W or less, the pressure used in the deposition process of the diamond film is 140Torr or more and 160Torr or less, the substrate temperature used in the deposition process of the diamond film is 800 ℃ or more and 900 ℃ or less, the total gas flow rate used in the deposition process of the diamond film is 500 seem, and the methane concentration used in the deposition process of the diamond film is 3% or more and 5% or less.
4. Diamond-based nitride according to claim 1The preparation method of the semiconductor device is characterized in that the target material is an aluminum target material when the aluminum nitride buffer layer is deposited, and the gas introduced when the aluminum nitride buffer layer is deposited is N2And Ar, said N2Account for (N)2+ Ar) gas percentage is 20% to 100%.
5. The method for producing a diamond-based nitride semiconductor device according to claim 1, wherein the deposition temperature is 800 ℃ or higher and 1000 ℃ or lower, the sputtering gas pressure used in the deposition of the aluminum nitride buffer layer is 3mTorr or higher and 6mTorr or lower, and the radio frequency power used in the deposition of the aluminum nitride buffer layer is 100W or higher and 500W or lower.
6. The method for producing a diamond-based nitride semiconductor device according to claim 1, characterized in that: the nitride semiconductor laminated structure includes at least a first nitride semiconductor layer and a second nitride semiconductor layer having a composition different from that of the first nitride semiconductor layer;
two-dimensional electron gas is generated at a hetero interface of the first nitride semiconductor layer and the second nitride semiconductor layer.
7. The method for producing a diamond-based nitride semiconductor device according to claim 6, wherein the first nitride semiconductor layer is a gallium nitride layer, and the second nitride semiconductor layer is an aluminum gallium nitride layer.
8. A diamond-based nitride semiconductor device comprising:
a diamond substrate (10);
an aluminum nitride buffer layer (20) on the diamond substrate (10);
a nitride semiconductor stacked structure (30) on the aluminum nitride buffer layer (20);
the method is characterized in that: the aluminum nitride buffer layer (20) is formed by adopting a high-temperature radio frequency magnetron sputtering deposition method, and the deposition temperature adopted by the high-temperature radio frequency magnetron sputtering deposition method is more than 800 ℃.
9. The diamond-based nitride semiconductor device according to claim 8, characterized in that: the diamond substrate (10) has a thermal conductivity of 2000 W.m-1·K-1As described above, the root mean square roughness of the surface of the diamond substrate (10) for forming the aluminum nitride buffer layer (20) is 1nm or less, and the thickness of the diamond substrate (10) is 50 μm or more and 500 μm or less.
10. The diamond-based nitride semiconductor device according to claim 8, characterized in that: the surface roughness of aluminium nitride buffer layer (20) is more than 0.8nm and below 2nm, the thickness of aluminium nitride buffer layer (20) is more than 20nm and below 2 um.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2021105384224 | 2021-05-18 | ||
| CN202110538422 | 2021-05-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114420563A true CN114420563A (en) | 2022-04-29 |
Family
ID=81275578
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210061589.0A Pending CN114420563A (en) | 2021-05-18 | 2022-01-19 | Diamond-based nitride semiconductor device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114420563A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115663015A (en) * | 2022-10-19 | 2023-01-31 | 上海新微半导体有限公司 | Semiconductor device structure and preparation method thereof |
| CN117004925A (en) * | 2023-08-07 | 2023-11-07 | 深圳市博源碳晶科技有限公司 | Diamond aluminum nitride based composite material and preparation method thereof |
-
2022
- 2022-01-19 CN CN202210061589.0A patent/CN114420563A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115663015A (en) * | 2022-10-19 | 2023-01-31 | 上海新微半导体有限公司 | Semiconductor device structure and preparation method thereof |
| CN115663015B (en) * | 2022-10-19 | 2023-12-15 | 上海新微半导体有限公司 | Semiconductor device structure and preparation method thereof |
| CN117004925A (en) * | 2023-08-07 | 2023-11-07 | 深圳市博源碳晶科技有限公司 | Diamond aluminum nitride based composite material and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI760855B (en) | High resistivity soi wafers | |
| TWI709197B (en) | A method of manufacturing high resistivity semiconductor-on-insulator wafers with charge trapping layers | |
| US9752255B2 (en) | Base material on which single-crystal diamond is grown comprised of a base substrate, bonded single-crystal MgO layer, and heteroepitaxial film, and method for manufacturing a single-crystal diamond substrate on the base material | |
| US6946317B2 (en) | Method of fabricating heteroepitaxial microstructures | |
| EP3349237B1 (en) | Method for manufacturing sic composite substrate, and method for manufacturing semiconductor substrate | |
| CN114420563A (en) | Diamond-based nitride semiconductor device and preparation method thereof | |
| JP2023525597A (en) | Nitride epitaxial wafer, manufacturing method thereof, and semiconductor device | |
| CN111540684A (en) | Microelectronic device of diamond-based heterogeneous integrated gallium nitride thin film and transistor and preparation method thereof | |
| CN101373714A (en) | Method for preparing nano-scale pattern substrate for nitride epitaxial growth | |
| CN113690298A (en) | Semiconductor composite substrate, semiconductor device and preparation method | |
| KR20090093887A (en) | Method of prepairing a substrate having near perfect crystal thin layers | |
| JP2004140317A (en) | Manufacturing methods of laminate and semiconductor device | |
| JP7433370B2 (en) | Composite substrate and its manufacturing method, semiconductor device, and electronic equipment | |
| US10283356B2 (en) | Semiconductor wafer comprising a monocrystalline group-IIIA nitride layer | |
| CN110211880B (en) | Manufacturing method of diamond-based gallium nitride HEMT structure | |
| CN115763221A (en) | Composite substrate, preparation method thereof and semiconductor device | |
| CN113130296B (en) | Method for growing gallium nitride on hexagonal boron nitride | |
| WO2022019799A1 (en) | Heteroepitaxial structure with a diamond heat sink | |
| JP7416935B2 (en) | Semiconductor substrate, manufacturing method thereof, and semiconductor device | |
| CN117080183A (en) | Diamond-single crystal AlN-GaNAlGaN composite wafer and preparation method and application thereof | |
| CN116936361A (en) | Nitrogen polar gallium nitride heterojunction material of diamond substrate and preparation method thereof | |
| CN111540710A (en) | Preparation method of high-heat-conductivity gallium nitride high-power HEMT device | |
| CN110791805A (en) | Substrate, epitaxial wafer and growth method thereof | |
| CN116590795A (en) | Method for growing monocrystalline GaN self-supporting substrate by using ceramic substrate | |
| WO2023284170A1 (en) | Method for fabricating gan chip and gan chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |