CN109830568A - A kind of method of growth in situ Al phasmon nanostructure - Google Patents
A kind of method of growth in situ Al phasmon nanostructure Download PDFInfo
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- CN109830568A CN109830568A CN201910097665.1A CN201910097665A CN109830568A CN 109830568 A CN109830568 A CN 109830568A CN 201910097665 A CN201910097665 A CN 201910097665A CN 109830568 A CN109830568 A CN 109830568A
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Abstract
The invention belongs to technical field of semiconductors, are related to a kind of method of growth in situ Al phasmon nanostructure.The method of growth in situ Al phasmon nanostructure of the invention, on the basis of conventional MOCVD grows AlGaN base detector epitaxial wafer, the characteristic thermally decomposed using aluminium organometallic sources, in AlGaN sill surface or the nanostructure of active area growth in situ Al, phasmon effect is generated, provides new way to improve AlGaN base detector extension piece performance.For the present invention using MOCVD method in AlGaN sill surface or active area growth in situ Al phasmon nanostructure, the equipment for preparing Al phasmon structure is to grow the high temperature MOCVD device of AlGaN material.The basic principle that the present invention prepares Al phasmon nanostructure is performance that the aluminum metal organic source in MOCVD is thermally decomposed, Al phasmon can be grown in AlGaN sill surface while growing AlGaN base epitaxial wafer or go deep into its active area, its phasmon effect is preferably played, AlGaN base is ultraviolet and deep ultraviolet detector performance to improve.
Description
Technical field
The invention belongs to technical field of semiconductors, and in particular to a kind of MOCVD growth in situ Al phasmon nanostructure
Method.
Background technique
Representative one of of the AlGaN sill as third generation semiconductor material has good photoelectric property and stability,
It receives significant attention, by adjusting the component in the alloy material in its system, it is continuous that band gap 3.4eV to 6.2eV may be implemented
It is adjustable.Have stability strong on ultraviolet, deep ultraviolet light electrical part based on AlGaN material, high temperature resistant is high pressure resistant, anti-spoke
According to etc. advantages, all have broad application prospects on military and civilian.And the far low desired value of current device performance, it ground in recent years
Study carefully personnel and find that metal nano phasmon structure can significantly improve device performance, provides a kind of new approaches for scientific research,
New method.
Plasmon resonance refers to the produced resonance coupling when electronic frequency matches in incident light frequency and metal
It closes, the energy of photon is transmitted to metal rapidly, then transfer energy to a kind of phenomenon of semiconductor by metal again, during this
Due to the phasmon effect of metal Nano structure, Localized field enhancement can be generated, to improve internal quantum efficiency.In recent years, etc.
Research from excimer receives the concern of more and more researchers, and theoretical and experiment aspect all achieves many achievements, to mention
High semiconductor photoelectric device performance provides a kind of new method.
Al is that AlGaN base is ultraviolet, deep ultraviolet photoelectric detector realizes the optimal metal material of phasmon enhancement effect
It is high to have resonant frequency for material, and price is low, the wide advantage in source, is a kind of higher phasmon material of practical value.But by
Higher in the Al atom coefficient of viscosity, transfer ability is weaker, has difficulties when preparing nanostructure.Al nanometers of preparation at present
The method of structure can mainly be attributed to two kinds, and one is with litho pattern, based on cooperation is evaporated in vacuo, another kind is logical
The vacuum evaporation technology optimized is crossed to directly obtain.Photoetching technique in first method includes electron beam lithography, nanosphere light
Quarter and nano impression etc., figure of the nanostructure that this method obtains with more rule, but size-constrained system on the whole, one
As size it is larger, be unfavorable for giving full play to the gain effect of phasmon.Second method can be directly sharp if oblique angle evaporates
It is obtained with evaporation of metal, simple process, particle size can be adjusted according to evaporation time, but be difficult to realize repeatability, ruler
Nanostructure that is very little uniform, being evenly distributed.But these two types of preparation methods there is a problem of one it is common, i.e., can only be in the table of device
Wheat flour is for Al nanostructure, it is difficult to go deep into device active region, there are biggish energy losses, thus can not be by the increasing of phasmon
Benefit effect maximizes.
Summary of the invention
The object of the present invention is to provide a kind of method of growth in situ Al phasmon nanostructure, this method is utilized
The method of MOCVD is while growing nitride material, growth in situ Al nanostructure, can on AlGaN material surface or
Al phasmon nanostructure is prepared in active area.
To achieve the goals above, technical solution of the present invention is specific as follows:
A kind of method of growth in situ Al phasmon nanostructure, comprising the following steps:
Step 1 grows AlGaN sill on substrate；
Al nanostructure is prepared in situ using MOCVD method in step 2 on AlGaN sill.
In the above-mentioned technical solutions, the preparation method can also include one layer of step 3, regrowth AlGaN sill.
In the above-mentioned technical solutions, step 2 is using MOCVD method on AlGaN sill surface or in AlGaN sill
Active area prepares Al nanostructure.
In the above-mentioned technical solutions, the substrate is sapphire, silicon or silicon carbide.
In the above-mentioned technical solutions, the method for AlGaN sill is grown for MOCVD method in step 1 and step 3.
In the above-mentioned technical solutions, the MOCVD method is high temperature MOCVD method.
In the above-mentioned technical solutions, it is aluminum metal organic source that step 2, which prepares the raw material of Al nanostructure,.
In the above-mentioned technical solutions, the method for the growth in situ Al phasmon nanostructure specifically includes following step
It is rapid:
Step 1, growth AlGaN sill
AlGaN sill is grown on substrate using MOCVD method；
Al nanostructure is prepared in situ on AlGaN sill surface or active area in step 2
Stopping is passed through NH3And source metal, with carrier gas H2It takes residual gas in reaction chamber out of cavity, adjusts reaction chamber temperature
At 500-800 DEG C, equilibrium temperature 1-2min opens aluminum metal organic source, continues 5-60s, silicon source is closed, in no NH3Under atmosphere
The growth of Al nanostructure is completed in cooling.
In the above-mentioned technical solutions, the preparation method can also include one layer of step 3, regrowth AlGaN sill.
The present invention has the following beneficial effects:
The method of growth in situ Al phasmon nanostructure provided by the invention is visited in conventional MOCVD growth AlGaN base
It surveys on the basis of device epitaxial wafer, the characteristic thermally decomposed using aluminium organometallic sources, in AlGaN sill surface or active area
The nanostructure of Al is grown, phasmon effect is generated, provides new way to improve AlGaN base detector performance.
It is provided by the invention to utilize MOCVD method on AlGaN sill surface or active area growth in situ Al etc. from sharp
First nanostructure, the equipment for preparing Al phasmon structure are to grow the high temperature MOCVD device of AlGaN material.The present invention provides
The basic principle that Al phasmon nanostructure is prepared in situ be performance that the aluminum metal organic source in MOCVD is thermally decomposed,
Al phasmon can be grown in AlGaN sill surface while growing AlGaN base epitaxial wafer or to go deep into its active
Area preferably plays its phasmon effect, to improve, AlGaN base is ultraviolet and deep ultraviolet detector performance.
Detailed description of the invention
Invention is further described in detail with reference to the accompanying drawings and detailed description.
Fig. 1 is that Al phasmon nanostructure flow chart is prepared in situ in MOCVD provided by the invention；
Fig. 2 is provided for the present invention and the structural schematic diagram of Al nanostructure is prepared in situ in active area MOCVD.
Fig. 3 is the structure of the Al nanostructure provided by the invention grown using MOCVD method on AlGaN sill surface
Schematic diagram.
Fig. 4 is the atom of the Al nanostructure provided by the invention grown using MOCVD method on AlGaN sill surface
Force microscope shape appearance figure.
Specific embodiment
The present invention provides a kind of method of growth in situ Al phasmon nanostructure, comprising the following steps:
Step 1 grows AlGaN sill on substrate；
Al nanostructure is prepared in situ using MOCVD method in step 2 on AlGaN sill.
It can also include one layer of step 3, regrowth AlGaN sill.
Preferably: step 2 is using MOCVD method on AlGaN sill surface or in AlGaN sill active area system
Standby Al nanostructure.
Preferably: the substrate is sapphire, silicon or silicon carbide.
Preferably: the method that AlGaN sill is grown in step 1 and step 3 is MOCVD method.
Preferably: the MOCVD method is high temperature MOCVD method.
Preferably: the raw material that step 2 prepares Al nanostructure is aluminum metal organic source.
The method of further preferred growth in situ Al phasmon nanostructure of the present invention specifically includes following step
It is rapid:
Step 1, growth AlGaN sill
AlGaN sill is grown on substrate using MOCVD method；
Al nanostructure is prepared in situ on AlGaN sill surface or active area in step 2
Stopping is passed through NH3And source metal, with carrier gas H2It takes residual gas in reaction chamber out of cavity, adjusts reaction chamber temperature
At 500-800 DEG C, equilibrium temperature 1-2min opens aluminum metal organic source, continues 5-60s, silicon source is closed, in no NH3Under atmosphere
The growth of Al nanostructure is completed in cooling.Preparation method flow chart is referring to Fig. 1.
It can also include step 3, utilize one layer of AlGaN sill of MOCVD method regrowth.
Embodiment 1
Step 1, growth AlGaN sill
AlGaN sill is grown on a sapphire substrate using MOCVD method；
Step 2 prepares Al nanostructure on AlGaN sill surface
Stopping is passed through NH3And source metal, with carrier gas H2It takes residual gas in reaction chamber out of cavity, adjusts reaction chamber temperature
At 500 DEG C, equilibrium temperature 2min, aluminum metal organic source trimethyl aluminium is opened, continues 60s, silicon source is closed, in no NH3Under atmosphere
The growth of Al nanostructure is completed in cooling；Its structure and pattern are respectively referring to Fig. 3 and Fig. 4.
Embodiment 2
Step 1, growth AlGaN sill
AlGaN sill is grown on a sapphire substrate using MOCVD method；
Al nanostructure is prepared in situ in AlGaN sill active area in step 2
Stopping is passed through NH3And source metal, with carrier gas H2It takes residual gas in reaction chamber out of cavity, adjusts reaction chamber temperature
At 800 DEG C, equilibrium temperature 1min, aluminum metal organic source trimethyl aluminium is opened, continues 10s, silicon source is closed, in no NH3Under atmosphere
The growth of Al nanostructure is completed in cooling；
Step 3 utilizes one layer of AlGaN sill of MOCVD method regrowth.
In conjunction with Fig. 2 illustrate that the present embodiment obtains that Al nanostructure is prepared in situ in active area MOCVD is further detailed
Carefully it is described as follows:
The required substrate 21 of selective epitaxy AlGaN material, c-plane sapphire substrate.
Using two-step growth method, the first AlGaN epitaxial layer 22 of high temperature MOCVD technology growth is utilized.
Using MOCVD epitaxy technology, Al nano junction is prepared in situ in AlGaN layer in a manner of single-pass aluminum metal organic source
Structure 23.
Using MOCVD epitaxy technology, the second AlGaN material of continued growth epitaxial layer 24 in Al nanostructure.
The method of the present invention is not limited to the above embodiments, and MOCVD method of the present invention prepares Al phasmon nano junction
The method of structure can also effectively improve the performance of AlGaN Schottky junction structure, PN structure and PIN structural detector.Side of the present invention
Method by the way that the phasmon nanostructure of Al is prepared in situ, and acts on the basis of conventional MOCVD epitaxy AlGaN material
Device surface or active area improve the performance of AlGaN detector.
Substrate used in above-described embodiment can also be substituted for other substrates of above-mentioned restriction, here no longer an example
It lifts.
Obviously, the above embodiments are merely examples for clarifying the description, and does not limit the embodiments.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of variation or
It changes.There is no necessity and possibility to exhaust all the enbodiments.And it is extended from this it is obvious variation or
It changes still within the protection scope of the invention.
Claims (10)
1. a kind of method of growth in situ Al phasmon nanostructure, which comprises the following steps:
Step 1 grows AlGaN sill on substrate；
Al nanostructure is prepared in situ using MOCVD method in step 2 on AlGaN sill.
2. the preparation method of AlGaN base detector epitaxial wafer according to claim 1, which is characterized in that can also include
One layer of step 3, regrowth AlGaN sill.
3. a kind of method of growth in situ Al phasmon nanostructure according to claim 1 or 2, which is characterized in that
Step 2 prepares Al nanostructure using MOCVD method on AlGaN sill surface or in AlGaN sill active area.
4. the preparation method of AlGaN base detector epitaxial wafer according to claim 1 or 2, which is characterized in that the substrate
For sapphire, silicon or silicon carbide.
5. a kind of method of growth in situ Al phasmon nanostructure according to claim 1 or 2, which is characterized in that
The method that AlGaN sill is grown in step 1 is MOCVD method.
6. a kind of method of growth in situ Al phasmon nanostructure according to claim 2, which is characterized in that step
The method that AlGaN sill is grown in 3 is MOCVD method.
7. a kind of method of growth in situ Al phasmon nanostructure according to claim 1 or 2, which is characterized in that
The MOCVD method is high temperature MOCVD method.
8. a kind of method of growth in situ Al phasmon nanostructure according to claim 1 or 2, which is characterized in that
The raw material that step 2 prepares Al nanostructure is aluminum metal organic source.
9. a kind of method of growth in situ Al phasmon nanostructure according to claim 1, which is characterized in that specific
The following steps are included:
Step 1, growth AlGaN sill
AlGaN sill is grown on substrate using MOCVD method；
Al nanostructure is prepared in situ on AlGaN sill surface or active area in step 2
Stopping is passed through NH3And source metal, with carrier gas H2Take residual gas in reaction chamber out of cavity, adjustment reaction chamber temperature exists
500-800 DEG C, equilibrium temperature 1-2min opens aluminum metal organic source, continues 5-60s, silicon source is closed, in no NH3Atmosphere decline
Temperature completes the growth of Al nanostructure.
10. the preparation method of AlGaN base detector epitaxial wafer according to claim 9, which is characterized in that the preparation side
Method can also include one layer of step 3, regrowth AlGaN sill.
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