CN101717923B - Nonpolar GaN membrane and preparation method thereof - Google Patents
Nonpolar GaN membrane and preparation method thereof Download PDFInfo
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- CN101717923B CN101717923B CN200910200280XA CN200910200280A CN101717923B CN 101717923 B CN101717923 B CN 101717923B CN 200910200280X A CN200910200280X A CN 200910200280XA CN 200910200280 A CN200910200280 A CN 200910200280A CN 101717923 B CN101717923 B CN 101717923B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000012528 membrane Substances 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 30
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 38
- 229910010093 LiAlO Inorganic materials 0.000 claims description 31
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 11
- 238000005516 engineering process Methods 0.000 claims description 10
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 claims description 7
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 abstract description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 2
- 239000001257 hydrogen Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 abstract 7
- 239000011241 protective layer Substances 0.000 abstract 4
- 229910010092 LiAlO2 Inorganic materials 0.000 abstract 3
- 230000002349 favourable effect Effects 0.000 abstract 1
- 229910002601 GaN Inorganic materials 0.000 description 60
- 239000010408 film Substances 0.000 description 46
- 239000007789 gas Substances 0.000 description 14
- 238000012876 topography Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 238000001000 micrograph Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 206010011376 Crepitations Diseases 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000004223 radioprotective effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
The invention discloses a nonpolar GaN membrane and a preparation method thereof. The membrane comprises a LiAlO2 substrate, a low-temperature protective layer, a U-AlGaN layer and a high-temperature U-GaN layer, wherein the low-temperature protective layer, the U-AlGaN layer and the high-temperature U-GaN layer are sequentially grown on the substrate. The preparation method comprises the following: a step 1 of growing the low-temperature protective layer, in which in a MOCVD system, LiAlO2 (100) plane serving as a substrate is heated to 800 to 950 DEG C in the presence of N2 and then switched to an atmosphere of hydrogen for growing the low-temperature protective layer U-GaN under conditions of a pressure of reaction chamber of 150 to 500torr and a flow rate of TMGa of 1 to 50sccm; a step 2 of growing the U-AlGaN layer, in which the pressure of the reaction chamber is reduced to 100 to 300torr and the temperature is raised to 1,000 to 1,100 DEGC to grow the U-AlGaN layer, under the conditions of a TMGa flow rate of 10 to 150sccm and a ratio of the molar flow rate of TMAl to the flow rate of the TMGa of 1:5-2; and a step 3 of growing the high-temperature U-GaN layer, in which the introduction of TMAl is stopped and the U-GaN is grown continuously. In the invention, the surface appearance of the nonpolar m(10-10) plane GaN membrane on the (100) plane lithium aluminate (LiAlO2) substrate is effectively improved, which is favorable for the improvement of the working efficiency of an element.
Description
Technical field
The present invention relates to a kind of at novel substrate (100) LiAlO
2Utilize the GaN film and the method thereof of yield production type MOCVD (metal organic chemical vapor deposition) technology growth on the material X material, refer in particular to and utilize the MOCVD technology to improve the method for nonpolar GaN film surface topography on the lithium aluminate substrate.
Background technology
The new generation of semiconductor material that with GaN is representative has obtained people's extensive concern with characteristics such as its wide direct band gap (Eg=3.4eV), high heat conductance, high firmness, high chemical stability, low-k, radioprotectives, in fields such as solid-state illumination, solid statelaser, optical information storage, ultraviolet detectors huge application potential is arranged all.Calculate by China's electricity consumption situation in 2002,, can save the generated energy of the three gorges hydropower plant in 1 year, huge economy, environment and social benefit are arranged if adopt solid-state illumination to substitute conventional light source; And according to USDOE's measuring and calculating, by 2010, the whole America semiconductor lighting industry output value will reach 50,000,000,000 dollars.Aspect the optical information storage, be that basic solid blue light laser can increase substantially optical storage density with GaN.Just because of these advantages, GaN and alloy thereof are placed high hopes.High brightness InGaN/GaN quantum well structure LEDs commercialization.
Substrate material has material impact for the quality of epitaxial film.GaN body monocrystalline material growth is very difficult at present, reports that GaN is that 60-70kbar, temperature are also not melt under 2300 ℃ at pressure.Growth conditions is HTHP normally, costs dearly, and is unfavorable for commercialization, and therefore present application is on sapphire, to do hetero epitaxy at c mostly.Using c is that the lattice mismatch of itself and GaN film is up to 13.6% to a sapphire significant drawback; Though can remedy this shortcoming through the impact plies technology; But serious like this mismatch still can cause having in the epitaxial film highdensity defective, thereby reduces device efficiency.In addition, the GaN film is normally along its polar axis c direction of principal axis growth, and the powerful built in field that is produced by spontaneous polarization and piezoelectric effect has reduced luminous efficiency widely.Adopt novel LiAlO
2Substrate is expected to solve this two problems.LiAlO
2Substrate and GaN film lattice mismatch are little, have only 1.4%, and at LiAlO
2Last growth be nonpolar GaN film, can eliminate the restriction of built in field for luminous efficiency.
The Chinese patent publication number is CN101364631; Open day is on February 11st, 2009; The application case that name is called " a kind of nonpolar GaN film and growth method thereof " discloses a kind of nonpolar GaN film and growth method thereof; In metal organic chemical vapor deposition (MOCVD) system, at lithium aluminate (LiALO
2) on the substrate, at N
2Protection is warmed up to 800-900 ℃, the growing low temperature resist down; Low-temperature protection layer chamber pressure is 150-500torr, and trimethyl-gallium (TMGa) flow is 1-50sccm, reduces pressure then to 100-300torr; Be warmed up to the 1000-1100 ℃ of non-doped gallium nitride of continued growth (U-GaN) layer, the TMGa flow is 10-200sccm, and then is warmed up to 1150-1200 ℃; The about 100nm of growth high temperature U-GaN, and then cool to 1000-1100 ℃ of growth U-GaN.Through the growing low temperature resist, protection lithium aluminate substrate is not destroyed by high temperature, and the purpose of of short duration high temperature U-GaN is to improve the surface finish of Grown GaN film.
But, at (100) face LiAlO
2Growing nonpolar m face (10-10) GaN film is easy to occur long and narrow striped on the substrate, and the existence of these stripeds has reduced film quality and surface finish on the one hand, becomes source in LiAlO on the other hand
2An approach of the impurity lithium diffusion of substrate is very disadvantageous for the LED device.
Given this, be necessary to provide a kind of new on the lithium aluminate substrate method of growing nonpolar GaN film to avoid existing of the problems referred to above.
Summary of the invention
The technical problem that the present invention will solve is to provide a kind of nonpolar GaN film and preparation method thereof, can effectively improve lithium aluminate (LiAlO
2) surface topography of non-polar m (10-10) face GaN film on the substrate.
In order to solve the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of nonpolar GaN film, it utilizes the MOCVD technology at LiAlO
2Synthetically grown on the substrate, this film comprises: LiAlO
2Substrate and low-temperature protection layer, U-AlGaN layer and the high temperature U-GaN layer of on this substrate, growing successively.
Wherein, said LiAlO
2Substrate is (100) face LiAlO
2Substrate.
Said low-temperature protection layer is the U-GaN layer.
A kind of preparation method of above-mentioned nonpolar GaN film, this method comprises the steps:
Step 1, growing low temperature resist: in the MOCVD system, with LiAlO
2(100) face is done substrate, at N
2Protection is warmed up to 800-950 ℃ down; Growing low temperature resist U-GaN then, chamber pressure is 150-500torr, trimethyl-gallium TMGa flow is 1-50sccm, corresponding to molar flow: 4E-6mol/min-3E-4mol/min;
Step 2; Growth U-AlGaN layer: reduce chamber pressure to 100-300torr; Be warmed up to 1000-1100 ℃, continued growth U-AlGaN layer, trimethyl-gallium TMGa flow is 10-150sccm; Corresponding to molar flow: 4E-5mol/min-7.5E-4mol/min, the molar flow of trimethylaluminium TMAl is 1/5-2/1 with the ratio of trimethylammonium TMGa flow;
Step 3, growth high temperature U-GaN layer: keep chamber pressure and temperature, stop to feed trimethylaluminium TMAl, continued growth U-GaN, trimethyl-gallium TMGa flow is 10-150sccm, corresponding to molar flow: 4E-5mol/min-7.5E-4mol/min.
As one of preferred version of the present invention, elder generation is to LiAlO before carrying out step 1 growing low temperature resist
2(100) the face substrate carries out the surface heat processing under 600-900 ℃.
As one of preferred version of the present invention, step 1 growing low temperature resist is at H
2Perhaps N
2And H
2Mixed-gas atmosphere under carry out.
As one of preferred version of the present invention, step 2 growth U-AlGaN layer is at H
2Perhaps N
2And H
2Mixed-gas atmosphere under carry out.
As one of preferred version of the present invention, the U-AlGaN layer thickness of growing in the step 2 is 20-50nm.
Compared to prior art, beneficial effect of the present invention is:
A kind of nonpolar GaN film provided by the invention and preparation method thereof through the non-doping aluminum gallium nitride U-AlGaN layer of growing, can effectively improve lithium aluminate LiAlO
2(100) surface topography of non-polar m (10-10) face GaN film on the face substrate improves its quality of forming film and surface finish, reduces defect concentration, thereby stops diffusion of contaminants, helps improving the working efficiency of device.
Description of drawings
Fig. 1 is the structural representation of nonpolar GaN film of the present invention.
Fig. 2 a-b adopts prior art at LiAlO
2(100) surface topography of preparation nonpolar GaN film on the face substrate; Wherein, Fig. 2 a is its SEM photo, and Fig. 2 b is its microphotograph.
Fig. 3 a-b is the surface topography of nonpolar GaN film in the embodiment of the invention; Wherein, Fig. 3 a is its SEM photo, and Fig. 3 b is its microphotograph.
Fig. 4 is the SIMS collection of illustrative plates of growth MQW sample on the film basis of using technology growth of the present invention.
Embodiment
Further specify practical implementation step of the present invention below in conjunction with accompanying drawing, for the accompanying drawing that makes things convenient for that illustrates is not proportionally drawn.
Referring to Fig. 1, a kind of nonpolar GaN film, it utilizes the MOCVD technology at LiAlO
2Synthetically grown on the substrate, this film comprises: LiAlO
2Substrate and low-temperature protection layer, U-AlGaN layer and the high temperature U-GaN layer of on this substrate, growing successively.
Wherein, said LiAlO
2Substrate is (100) face LiAlO
2Substrate.Said low-temperature protection layer is the U-GaN layer.
The method for preparing above-mentioned nonpolar GaN film comprises the steps:
Step 1, growing low temperature resist: in the MOCVD system, with LiAlO
2(100) face is done substrate, at N
2Protection is warmed up to 800-950 ℃ down; Switch to hydrogen atmosphere afterwards, at H
2Perhaps N
2And H
2Mixed-gas atmosphere under growing low temperature resist U-GaN, chamber pressure is 150-500torr, trimethyl-gallium TMGa flow is 1-50sccm, corresponding to molar flow: 4E-6mol/min-3E-4mol/min;
Step 2, growth U-AlGaN layer: reduce chamber pressure to 100-300torr, be warmed up to 1000-1100 ℃, at H
2Perhaps N
2And H
2Mixed-gas atmosphere under continued growth U-AlGaN layer, trimethyl-gallium TMGa flow is 10-150sccm, corresponding to molar flow: 4E-5mol/min-7.5E-4mol/min, the molar flow of trimethylaluminium TMAl is 1/5-2/1 with the ratio of trimethylammonium TMGa flow;
Step 3, growth high temperature U-GaN layer: keep chamber pressure and temperature, stop to feed trimethylaluminium TMAl, at H
2Perhaps N
2And H
2Mixed-gas atmosphere under continued growth U-GaN, trimethyl-gallium TMGa flow is 10-150sccm, corresponding to molar flow: 4E-5mol/min-7.5E-4mol/min.
As one of preferred version of the present invention, elder generation is to LiAlO before carrying out step 1 growing low temperature resist
2(100) the face substrate carries out the surface heat processing under 600-900 ℃.
As one of preferred version of the present invention, the U-AlGaN layer thickness of growing in the step 2 is 20-50nm.
Wherein, U-AlGaN refers to unadulterated aluminum gallium nitride, and U-GaN refers to unadulterated gan.
Usually for Sapphire Substrate, in metal organic chemical vapor deposition MOCVD system, reactant gases is an ammonia, and the MO source is trimethyl-gallium (TMGa), trimethylaluminium (TMAl) etc., at N
2Or H
2Or growing film under the mixed-gas atmosphere.For the lithium aluminate substrate, in the MOCVD system, from the purpose of protection substrate, can adopt N usually
2Atmosphere growing low temperature resist, and the present invention is at H
2Or N
2And H
2Mixed-gas atmosphere under film such as growing low temperature resist, U-GaN, U-AlGaN.
Growing low temperature resist purpose is to protect the lithium aluminate substrate not destroyed by high temperature.The lithium aluminate substrate that adopts is (100) planar orientation, so institute's Grown GaN thin film alignment is m (10-10) face.
Embodiment one
In order to improve lithium aluminate LiAlO
2(100) surface topography of non-polar m (10-10) face GaN film on the face substrate prepares nonpolar GaN film of the present invention, specifically comprises the steps:
Step 1, growing low temperature resist: in the MOCVD system, with LiAlO
2(100) face is done substrate, at N
2Protection is warmed up to 800-950 ℃ down; Then, at H
2Perhaps N
2And H
2Mixed-gas atmosphere under growing low temperature resist U-GaN, chamber pressure is 150-500torr, trimethyl-gallium TMGa flow is 1-50sccm;
Step 2, growth U-AlGaN layer: reduce chamber pressure to 300torr, be warmed up to 1000 ℃, at H
2Perhaps N
2And H
2Mixed-gas atmosphere under continued growth U-AlGaN layer, trimethyl-gallium TMGa flow is 150sccm, the molar flow of trimethylaluminium TMAl is 1/5 with the ratio of trimethylammonium TMGa flow;
Step 3, growth high temperature U-GaN layer: keep chamber pressure and temperature, stop to feed trimethylaluminium TMAl, at H
2Perhaps N
2And H
2Mixed-gas atmosphere under continued growth U-GaN, trimethyl-gallium TMGa flow is 10-150sccm.
It is good finally to have obtained film quality, non-polar m (10-10) face GaN film that smooth surface is smooth.
Embodiment two
Adopt identical technical scheme with embodiment one, difference is that growth U-AlGaN layer in the step 2: chamber pressure is 200torr, is warmed up to 1050 ℃, at H
2Perhaps N
2And H
2Mixed-gas atmosphere under continued growth U-AlGaN layer, trimethyl-gallium TMGa flow is 100sccm, the molar flow of trimethylaluminium TMAl is 3/4 with the ratio of trimethylammonium TMGa flow.
Embodiment three
Adopt identical technical scheme with embodiment one, difference is that growth U-AlGaN layer in the step 2: chamber pressure is 100torr, is warmed up to 1100 ℃, at H
2Perhaps N
2And H
2Mixed-gas atmosphere under continued growth U-AlGaN layer, trimethyl-gallium TMGa flow is 50sccm, the molar flow of trimethylaluminium TMAl is 1/1 with the ratio of trimethylammonium TMGa flow.
Embodiment four
Adopt identical technical scheme with embodiment one, difference is that long U-AlGaN layer in the step 2: chamber pressure is 100torr, is warmed up to 1100 ℃, at H
2Perhaps N
2And H
2Mixed-gas atmosphere under continued growth U-AlGaN layer, trimethyl-gallium TMGa flow is 10sccm, the molar flow of trimethylaluminium TMAl is 2/1 with the ratio of trimethylammonium TMGa flow.
Embodiment five
Adopt identical technical scheme with embodiment one, difference is, carries out step 1 growing low temperature resist before earlier to LiAlO
2(100) the face substrate is preferably and carries out the surface heat processing under 800 ℃ at 600-900 ℃.
Other processing condition that relate among the present invention are the common process condition, belong to the category that those skilled in the art are familiar with, and repeat no more at this.The surface topography situation of each embodiment gained film sample please see the following form:
Fig. 2 a, the preparation method (among GaNs do not insert U-AlGaN layer) of 2b for adopting prior art are at LiAlO
2(100) surface topography of preparation nonpolar GaN film on the face substrate; Wherein, Fig. 2 a is its SEM photo, and Fig. 2 b is its microphotograph.Visible by figure, long and narrow crackle has appearred in the nonpolar GaN film surface, and the existence of these crackles has reduced film quality and surface finish on the one hand, becomes source in LiAlO on the other hand
2An approach of the impurity lithium diffusion of substrate, very unfavorable for the LED device.
Fig. 3 a, 3b are the surface topography of nonpolar GaN film among the embodiment; Wherein, Fig. 3 a is its SEM photo, and Fig. 3 b is its microphotograph.Through contrasting with Fig. 2 a, 2b, it is thus clear that adopt nonpolar (10-10) face GaN film of the inventive method preparation, its smooth surface is smooth, and quality of forming film is better.Fig. 4 is the SIMS collection of illustrative plates of growth MQW sample on the film basis of using technology growth of the present invention.
The method of the invention can effectively be improved lithium aluminate LiAlO
2(100) surface topography of non-polar m (10-10) face GaN film on the face substrate improves its quality of forming film and surface finish, reduces defect concentration, thereby stops diffusion of contaminants, helps improving the working efficiency of LED device.
The foregoing description is the unrestricted technical scheme of the present invention in order to explanation only.Any technical scheme that does not break away from spirit and scope of the invention all should be encompassed in the middle of the patent claim of the present invention.
Claims (6)
1. nonpolar GaN film, it utilizes the MOCVD technology at LiAlO
2Synthetically grown on the substrate is characterized in that, this film comprises: LiAlO
2Substrate and low-temperature protection layer, unadulterated AlGaN layer and the unadulterated GaN layer of high temperature of on this substrate, growing successively; Said low-temperature protection layer is unadulterated GaN.
2. the preparation method of a nonpolar GaN film is characterized in that, this method may further comprise the steps:
Step 1, growing low temperature resist: in the MOCVD system, with LiAlO
2(100) face is done substrate, at N
2Protection is warmed up to 800-950 ℃ down; The unadulterated GaN of growing low temperature resist then, chamber pressure is 150-500torr, trimethyl-gallium TMGa flow is 1-50sccm, corresponding to molar flow: 4 * 10
-6Mol/min-3 * 10
-4Mol/min;
Step 2, the unadulterated AlGaN layer of growing: reduce chamber pressure to 100-300torr, be warmed up to 1000-1100 ℃, the unadulterated AlGaN layer of continued growth, trimethyl-gallium TMGa flow is 10-150sccm, corresponding to molar flow: 4 * 10
-5Mol/min-7.5 * 10
-4Mol/min, the molar flow of trimethylaluminium TMA1 is 1/5-2/1 with the ratio of trimethylammonium TMGa flow;
Step 3, growth high temperature unadulterated GaN layer: keep chamber pressure and temperature, stop to feed trimethylaluminium TMA1, the unadulterated GaN of continued growth, trimethyl-gallium TMGa flow is 10-150sccm, corresponding to molar flow: 4 * 10
-5Mol/min-7.5 * 10
-4Mol/min.
3. according to the preparation method of a kind of nonpolar GaN film described in the claim 2, it is characterized in that: elder generation is to LiAlO before carrying out step 1 growing low temperature resist
2(100) the face substrate carries out the surface heat processing under 600-900 ℃.
4. according to the preparation method of a kind of nonpolar GaN film described in the claim 2, it is characterized in that: step 1 growing low temperature resist is at H
2Perhaps N
2And H
2Mixed-gas atmosphere under carry out.
5. according to the preparation method of a kind of nonpolar GaN film described in the claim 2, it is characterized in that: the step 2 unadulterated AlGaN layer of growing is at H
2Perhaps N
2And H
2Mixed-gas atmosphere under carry out.
6. according to the preparation method of a kind of nonpolar GaN film described in the claim 4, it is characterized in that: the unadulterated AlGaN layer thickness of growing in the step 2 is 20-50nm.
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| CN101901759B (en) * | 2010-06-24 | 2012-03-28 | 西安电子科技大学 | MOCVD (Metal-organic Chemical Vapor Deposition) growth method of nonpolar a-side GaN film on r-side based Al2O3 substrate |
| CN103996756B (en) * | 2014-05-30 | 2017-01-18 | 广州市众拓光电科技有限公司 | Film coating method and application thereof |
| CN113126373B (en) * | 2020-01-10 | 2022-10-11 | 中国科学院上海光学精密机械研究所 | Reflective optical addressing liquid crystal spatial light modulator |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101364631A (en) * | 2008-09-25 | 2009-02-11 | 上海蓝光科技有限公司 | Nonpolar GaN film and growth method thereof |
| CN101509145A (en) * | 2009-02-24 | 2009-08-19 | 上海蓝光科技有限公司 | Method for growing nonpolar a face GaN film on lithium aluminate substrate |
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2009
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101364631A (en) * | 2008-09-25 | 2009-02-11 | 上海蓝光科技有限公司 | Nonpolar GaN film and growth method thereof |
| CN101509145A (en) * | 2009-02-24 | 2009-08-19 | 上海蓝光科技有限公司 | Method for growing nonpolar a face GaN film on lithium aluminate substrate |
Non-Patent Citations (1)
| Title |
|---|
| 刘斌等.MOCVD生长不同Al组分AlGaN薄膜.《激光与红外》.2007,第37卷964-966，970. * |
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