CN109813206A - A kind of capacitance displacement sensor probe based on conductive film - Google Patents
A kind of capacitance displacement sensor probe based on conductive film Download PDFInfo
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- CN109813206A CN109813206A CN201910159511.0A CN201910159511A CN109813206A CN 109813206 A CN109813206 A CN 109813206A CN 201910159511 A CN201910159511 A CN 201910159511A CN 109813206 A CN109813206 A CN 109813206A
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
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- 239000011521 glass Substances 0.000 claims description 3
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
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- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
Abstract
The invention discloses a kind of, and the capacitance displacement sensor based on conductive film is popped one's head in, in the annular brace of one end that the cylindrical insulating substrate of the through hole with conductive film and filled with conductive material is fixed on cylindrical metal case by screwing-in device and sealing ring；Insulating substrate is contacted with the one side of conductive film with support frame, and contact portion is without conductive film；Sealing ring is located at insulating substrate without the one side of conductive film, and screwing-in device is contacted with sealing ring；There is conductive film degree Kelvin to protect ring structure, by insulated separation there is the concentric complete ring shaped conductive film of the complete circular conductive film in surface and surface to form；Conductive material is located in through hole, and one end is connected to circular conductive film, and the other end is as pin.The present invention improves single electrode capacitance displacement sensor field uniformity；The depth of parallelism for improving conductive film surface and support frame surface, improves single electrode capacitance displacement sensor installation accuracy, so as to improve the measurement accuracy and reliability of capacitance displacement sensor.
Description
Technical field
The present invention relates to capacitance displacement sensor probe fields, and in particular to a kind of capacitive displacement sensing based on conductive film
Device probe, the complete circular conductive film in especially a kind of concentric surface based on insulated separation on insulating substrate and surface are complete
Ring shaped conductive film composition standard degree Kelvin protection ring structural conductive film capacitance displacement sensor probe.
Background technique
Capacitance displacement sensor have dynamic characteristic is good, resolving power is high, advantages of simple structure and simple, be very suitable to high-precision,
Non-contact dynamic measurement, has been widely used for the high-acruracy survey in the fields such as displacement, pressure.In capacitance displacement sensor, electricity
Holding the relationship between (C) and electrode between distance (d) may be expressed as:
C=εrε0A/d (1)
Wherein, εrThe medium relative dielectric constant between electrode, ε0For permittivity of vacuum, A area coverage between pole plate, d
For pole plate spacing.Distance between polar plate variation, causes capacitance sensor capacitance variations, to realize that displacement, pressure etc. measure.It is above-mentioned
The condition that equation (1) is set up is electric fields uniform distribution between capacitance displacement sensor pole plate.During in the presence of production, installation etc.
Not parallel error between the fringe field and pole plate of introducing can all lead between capacitance displacement sensor two-plate field distribution not
In parallel, but with spatial variations, lead to capacitance displacement sensor signal skew.In order to minimize marginal effect of electric field, mention
High electric field distribution the uniformity, capacitance sensor probe in generally use document [1] Journal Applied Physics
1975,46,2486-2490 [W.C.Heerens, F.C.Vermeulen, Capacitance of kelvin guard-ring
Capacitors with modified edge geometry, J.Appl.Phys.46 (1975) 2486-2490] in report
The electrode (see Fig. 3 (a)) of degree Kelvin protection ring (Kelvin Guard Ring) structure is made of working electrode 1 and protection ring.
Working electrode 2 is generally detected object in Fig. 3 (b), and work area is much larger than working electrode 1.In the process of running, it works
Electrode 1 and protection ring potential are consistent, and substantially reduce marginal effect of electric field.
In addition, capacitance sensor electrode thickness is bigger, marginal effect of electric field is bigger.In order to reduce electrode thickness, Ren Menyi
Using the thicker metal plate of the thin conductive film substitution degree Kelvin ring structure of the degree Kelvin protection ring structure on insulating substrate as electricity
Pole reduces marginal effect of electric field.However, when using the conductive film of degree Kelvin ring structure, in order to work electricity among protection ring
Pole connecting lead wire, it is non-that conductive film often uses document [3] Nature Nanotechnology 2011,6,496-500 to report
The degree Kelvin of standard protects ring structure (see Fig. 4), this can introduce additional marginal effect of electric field, damages capacitance displacement sensor
Energy.
It is for tilt angle between two rectangle pole platesCapacitance displacement sensor, document (2) Electronics
2008, Sozopol, Bulgaria, 15-20 give the almost quantitative relationship between capacitor (C) and electrode between distance (d),
See below equation (2):
Wherein, a is the width of rectangle pole plate；L is the length of rectangle pole plate；Tilt angle between two-plate；D is
The distance between two-plate central point.Under conditions of from formula (1) and (2) as can be seen that only considering plate non-paralleled degree error,
Improve capacitance displacement sensor there are mainly two types of the methods of displacement measurement precision aspect.The first is improved between two-plate
The depth of parallelism minimizes tilt angle between pole plate, to ignore non-parallel degree error.Second method is exactly to obtain capacitive displacement
Tilt angle in sensor between two-plate is calibrated by equation (2).It is put down however, either improving between two-plate
Row degree obtains tilt angle between two-plate, it is necessary to which assigning capacitance displacement sensor and visiting first datum level just can be carried out
Calibration improves measurement accuracy.When for the thicker metal plate using degree Kelvin ring structure as electrode, plate electrodes itself can
Using the datum level popped one's head in as capacitance displacement sensor.And for the thin conductive film of the degree Kelvin ring structure using on insulating substrate as
When electrode, usually using package metals shell as benchmark face, therefore, with the thin conductive film of degree Kelvin protection ring structure on insulating substrate
When as electrode, improving the insulating substrate with conductive film and the installation depth of parallelism between metal shell datum level also is to improve capacitor
The key of displacement sensor precision.
Summary of the invention
The purpose of the present invention is: avoid above-mentioned capacitance displacement sensor probe with degree Kelvin off-gauge on insulating substrate guarantor
When the conductive film of protection structure is electrode, there are problems that biggish marginal effect of electric field, using the insulating substrate for having through hole, and
Conductive material is filled in hole, the one end and insulating substrate for ensuring conductive material a surface in the same plane simultaneously, make
It is connected with conductive film, to assign degree Kelvin protection structure of the conductive film with standard, reduces marginal effect of electric field；In addition,
The part in the one side of conductive film without conductive film is had with package metals shell one end as datum level by insulating substrate
Support directly contacts, and the insulating substrate with conductive film and the installation depth of parallelism between metal shell datum level is improved, to provide
A kind of high-precision capacitance displacement sensor probe.
The technical scheme is that a kind of capacitance displacement sensor probe based on conductive film, is included in cylindrical exhausted
The conductive film of complete degree Kelvin protection ring structure is formed on edge substrate, the degree Kelvin protection ring structural conductive film passes through physics gas
Mutually deposition or silk-screen printing technique obtain；Annular conductive film outer diameter is less than cylinder in the degree Kelvin protection ring structural conductive film
Insulating substrate diameter；
Especially: the cylinder insulating substrate band is filled with conductive material in hole there are two through hole, conductive material
The one side of one end and cylindrical insulating substrate is in same plane；The other end of conductive material is as lead pin；
Conductive material is filled using filling or electro-plating method in the through hole of the cylinder insulating substrate；
Conduction material in the outer annular conductive film and one through hole of the conductive film of the complete degree Kelvin ring structure
Material is connected to the one side of cylindrical insulating substrate in conplane one end；In inner circular conductive film and another through hole
Conductive material is connected to the one side of cylindrical insulating substrate in conplane one end；
It is described cylinder insulating substrate with complete degree Kelvin ring structure conductive film one side with outside cylindrical shield metal
The support of shell one end contacts, and contact portion is without conductive film；The cylinder insulating substrate is fixed on circle by screwing-in device
Cylindricality shields metal shell, and cylindrical insulating substrate is without there are one between the one side and cylindrical metal screwing-in device of conductive film
A annular gasket；
The cylinder insulating substrate diameter is less than cylindrical shield metal shell outer diameter, but is greater than support internal diameter；
The annular gasket outer diameter is less than cylindrical shield internal diameter of outer cover；
There are screw threads for the cylindrical metal precession transposition lateral surface, and with cylindrical shield inside of metal outershell surface spiral shell
Line cooperation；
There is the through hole for lead in cylindrical metal screwing-in device center；
The cylinder insulating substrate material is glass, quartz, the silicon with silicon oxide layer, insulating ceramic materials oxidation
Any one (insulating ceramics) in aluminium, zirconium oxide, silicon nitride or their compound species；
In the conductive film of the complete degree Kelvin structure conductive component be platinum, gold, silver, copper, palladium, nickel, iron, aluminium, titanium, cobalt,
Any one [in metal, graphite or their compounds any one] in tungsten, molybdenum, tantalum, graphite or their compounds.
The cylindrical metal screwing-in device material is stainless steel, copper alloy or aluminium alloy；
The cylindrical metal shielding enclosure material is stainless steel, copper alloy or aluminium alloy；
The annular gasket material is polytetrafluoroethylene (PTFE), various insulating properties rubber or metal.
The utility model has the advantages that capacitance displacement sensor probe is substantially all using the degree Kelvin that can reduce marginal effect of electric field at present
Protect the cylindrical metal electrode of ring structure.However, compared with conductive membrane electrode thin on insulating substrate, cylindrical metal electrode
It is thicker, additional fringe field effects can be introduced.For this purpose, people attempt to substitute thicker circle with conductive film thin on insulating substrate
Cylindricality metal electrode, to further decrease marginal effect of electric field.But connected for the ease of contact conductor, it is led on insulating substrate
Electrolemma is often off-gauge degree Kelvin protection ring structure, this can damage the effect for reducing marginal effect of electric field, final to influence electricity
Hold displacement sensor performance.
The beneficial effects of the present invention are:
Compared with the existing technology, in the present invention, two through holes are introduced on the insulating substrate, and fill conduction material
Expect, one end of the conductive material in two through holes is led with inner circular in the conductive film with standard degree Kelvin ring structure respectively
Electrolemma is connected to outer annular conductive film, and the other end of the conductive material in two through holes is as standard degree Kelvin protection ring knot
The lead pin of the conductive film of structure, eventually as capacitance displacement sensor probe electrode；In addition, electricity is being fixedly mounted in the present invention
Part and encapsulation when holding displacement sensor probe electrode, by insulating substrate with edge in the one side of conductive film without conductive film
Metal shell one end is directly contacted as the support of datum level, improve the insulating substrate with conductive film and metal shell datum level it
Between the installation depth of parallelism, for subsequent capacitance displacement sensor calibration a kind of reliable datum level is provided.
As a result, the beneficial effects of the present invention are: introducing the through hole of filling conductive material in the insulating substrate, and lead
Electric material is intact with insulating substrate surface and there is standard degree Kelvin ring structure conductive film to contact, this is ensuring standard degree Kelvin ring
While conductive film is connected to outside lead, fringe field effects can be reduced；In addition, insulating substrate to be had to the one side of conductive film
Support of part of the middle edge without conductive film with package metals shell one end as datum level directly contacts, and improves band conductive film
Insulating substrate and metal shell datum level between the installation depth of parallelism, for subsequent capacitance displacement sensor calibration one kind is provided can
The datum level leaned on improves capacitance displacement sensor measurement accuracy.
Detailed description of the invention
Fig. 1 is schematic diagram of popping one's head in the present invention is based on conductive film capacitance displacement sensor.
Fig. 2 is to lead on 2 surface of insulating substrate of the through hole with filling conductive material with standard degree Kelvin ring structure
1 schematic diagram of electrolemma.
Fig. 3 is the electrode schematic diagram of degree Kelvin protection ring (Kelvin Guard Ring) structure in the prior art, wherein
Fig. 3 (a) is that the degree Kelvin being made of working electrode 1 and protection ring protects the electrode cross-section schematic diagram of ring structure, and Fig. 3 (b) is
Degree Kelvin protects the electrode Longitudinal cross section schematic of ring structure (wherein working electrode 2 is generally detected object).
Fig. 4 is off-gauge degree Kelvin protection ring structural schematic diagram in the prior art.
In figure, 1 is conductive film, and 11 be circular conductive film, and 12 be ring shaped conductive film, and 2 be insulating substrate, and 21 run through for first
Hole, 22 be the second through hole, and 211 be the first conductive material, and 221 be the second conductive material, and 3 be metal shell, and 31 be annular branch
Support, 32 be internal screw thread, and 4 be screwing-in device, and 41 be external screw thread, and 42 be through hole, and 5 be annular gasket.
Specific embodiment
With reference to the accompanying drawing and specific embodiment further illustrates the present invention.
Embodiment 1
1 detailed process of the embodiment of the present invention are as follows:
Insulating substrate 2 is round alumina ceramic substrate, fills conduction material in the first through hole 21 and the second through hole 22
Material is the first conductive material 211 and the second conductive material 221, palladium-silver composite conducting material；Degree Kelvin ring structure conductive film 1 is
Palladium-silver composite conducting material；Metal shell 3 is 304 stainless steels；Annular gasket 5 is polytetrafluoroethylene (PTFE).
Embodiment 2
2 detailed process of the embodiment of the present invention are as follows:
Insulating substrate 2 is circular glass substrate, fills the first conductive material in the first through hole 21 and the second through hole 22
211 and second conductive material 221 be copper；Degree Kelvin ring structure conductive film 1 is platinum；Metal shell 3 is aluminium alloy；Annular gasket 5
For silicon rubber.
Embodiment 3
3 detailed process of the embodiment of the present invention are as follows:
Insulating substrate 2 is round alumina-zirconium oxide composite substrate, is filled in the first through hole 21 and the second through hole 22
First conductive material 211 and the second conductive material 221 are platinum conductive material；Degree Kelvin ring structure conductive film 1 is gold；Metal shell
3 be aluminium alloy；Annular gasket 5 is copper.
Claims (8)
1. a kind of capacitance displacement sensor probe based on conductive film, including it is solid with conductive film (1) cylindrical insulating substrate (2)
Due on the ring holder (31) of one end of cylindrical metal case (3), it is characterised in that: the cylinder insulating substrate
(2) the first through hole (21) and the second through hole (22) are had；The first conductive material is filled in first through hole (21)
(211), the second conductive material (221) are filled in the second through hole (22)；It leads one end of first conductive material (211) and second
A surface of the one end of electric material (221) respectively with insulating substrate (2) is in the same plane；
The conductive film (1) has the concentric complete circular conductive film (11) in surface and the complete ring in surface by insulated separation
Shape conductive film (12) composition；Circular conductive film (11) is connected to one end of the first conductive material (211)；Ring shaped conductive film (12) with
One end of second conductive material (221) be connected to, the other end of the first conductive material (211) and the second conductive material (221)
The other end is all used as pin；
The outer diameter of the ring shaped conductive film (12) is less than the diameter of cylindrical insulating substrate；
The cylinder insulating substrate (2) is fixed on circular metal shell (3) by screwing-in device (4) and annular gasket (5)
On ring holder (31)；Insulating substrate (2) is contacted with the one side of conductive film (1) with ring holder (31), contact portion
Without conductive film (1)；Annular gasket (5) is located at insulating substrate (2) without the surface of conductive film；Screwing-in device (4) and ring
Shape gasket (5) directly contacts.
2. the capacitance displacement sensor probe according to claim 1 based on conductive film, it is characterised in that: the insulation base
Plate (2) material be glass, quartz, silicon or insulating ceramic materials with silicon oxide layer, insulating ceramic materials can be aluminium oxide,
Any one in zirconium oxide, silicon nitride or their compound species.
3. the capacitance displacement sensor probe according to claim 1 based on conductive film, it is characterised in that: the conductive film
(1) conductive component is appointing in platinum, gold, silver, copper, palladium, nickel, iron, aluminium, titanium, cobalt, tungsten, molybdenum, tantalum, graphite or their compounds in
It anticipates one kind.
4. the capacitance displacement sensor probe according to claim 1 based on conductive film, it is characterised in that: the precession dress
Setting (4) is cylindrical body, and outer surface has external screw thread (41), there is the through hole for lead among screwing-in device cross section
(42)。
5. the capacitance displacement sensor probe according to claim 1 based on conductive film, it is characterised in that: the cylindrical shape
The inner surface of metal shell (3) has the internal screw thread (32) with screwing-in device (4) outer surface external screw thread (41) cooperation；It is cylinder-shaped
The inside diameter of the ring holder (31) of metal shell (3) one end is less than the diameter of round insulation substrate (4), but is greater than annular
The outer diameter of conductive film (12).
6. the capacitance displacement sensor probe according to claim 1 based on conductive film, it is characterised in that: the cylindrical shape
Metal shell (3) material is stainless steel, copper, copper alloy or aluminium alloy.
7. the capacitance displacement sensor probe according to claim 1 based on conductive film, it is characterised in that: the precession dress
Setting (4) material is stainless steel, copper, copper alloy or aluminium alloy.
8. the capacitance displacement sensor probe according to claim 1 based on conductive film, it is characterised in that: the air ring
Piece (5) material is polytetrafluoroethylene (PTFE), insulating properties rubber or metal.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110186366A (en) * | 2019-06-11 | 2019-08-30 | 中国科学技术大学 | A kind of conductive film and preparation method thereof |
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| CN210004943U (en) * | 2019-03-04 | 2020-01-31 | 中国科学技术大学 | capacitance displacement sensor probe based on conductive film |
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2019
- 2019-03-04 CN CN201910159511.0A patent/CN109813206B/en active Active
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|---|---|---|---|---|
| RU2126533C1 (en) * | 1997-11-26 | 1999-02-20 | Куликов Николай Дмитриевич | Capacitive type pressure and differential pressure pickup |
| US20070034013A1 (en) * | 2005-08-10 | 2007-02-15 | Postech Foundation | Contact-type electric capacitive displacement sensor |
| CN201964871U (en) * | 2011-03-01 | 2011-09-07 | 欧阳祖熙 | Capacitive displacement sensor and component-type borehole strain meter adopting same |
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