CN101680813B - Capacitive pressure sensor - Google Patents
Capacitive pressure sensor Download PDFInfo
- Publication number
- CN101680813B CN101680813B CN200880018902.0A CN200880018902A CN101680813B CN 101680813 B CN101680813 B CN 101680813B CN 200880018902 A CN200880018902 A CN 200880018902A CN 101680813 B CN101680813 B CN 101680813B
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- pressure transducer
- glass
- conductive layer
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0075—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a ceramic diaphragm, e.g. alumina, fused quartz, glass
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L13/00—Devices or apparatus for measuring differences of two or more fluid pressure values
- G01L13/02—Devices or apparatus for measuring differences of two or more fluid pressure values using elastically-deformable members or pistons as sensing elements
- G01L13/025—Devices or apparatus for measuring differences of two or more fluid pressure values using elastically-deformable members or pistons as sensing elements using diaphragms
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
Disclosed is a pressure sensor comprising a base (1) and an elastic measuring membrane (2) which is joined to a surface of the base (1) to form a measuring chamber (3) that is tightly sealed on the edge. The base (1) and/or the measuring membrane (2) contain ceramics, glass, or a monocrystalline material. The measuring membrane is provided with at least one first electrode (6) that faces the surface of the base (2), while the surface of the base (1) is equipped with at least one second electrode (5) which faces the measuring membrane (2), the capacity between the first electrode and the second electrode being a measure of the pressure that is to be measured. Furthermore, at least one of the first and second electrodes have a conductive layer containing metal and glass, the metal encompassing at least two precious metal elements.
Description
Technical field
The present invention relates to a kind of capacitance pressure transducer.
Background technology
Capacitance pressure transducer, comprises the matrix and the flexible measurement film of rigidity, and the surface-welding of this measurement film and matrix is to be formed on hermetically enclosed measurement chamber, edge, wherein
Matrix and/or measurement film comprise pottery, glass or monocrystal material,
Measure film and have at least one first electrode towards the surface of matrix,
The surface of matrix has at least one towards second electrode of measuring film, and
Electric capacity between first electrode and second electrode is measuring of testing pressure.
Typical electrode material is a metal, and it deposits particularly vapor deposition or spraying plating at matrix or measure on the film.For example, can consider tantalum to this, it is fit to the high vacuum welding process, and this process is used for for example utilizing active hard solder to connect matrix and measures film.
This pressure transducer in varying degrees for moisture-sensitive, because even on visual smooth ceramic surface, also still have an incompleteness of many absorption hydrones.In order to reduce dependence for humidity, measure surface in the chamber and can be hydrophobic and/or they can coated glassy layer.
By this way, can make the pressure transducer with acceptable moisture-sensitive degree basically, wherein also have a factor that influences the moisture-sensitive degree, it only can utilize described measure to deal with conditionally.More accurate study shows, at the fringe region of electrode, between electrode and smooth substrate, does not have sharp-pointed border, but can have the electrode material island or the clump of insulation in the outside at the expectation edge of electrode surface.A reason that outside electrode surface expectation edge, forms this clump maybe be relevant with template, and during the sputter deposited or vapor deposition of electrode material, matrix or measurement film are covered by this template.When template enough was not sealed shut, electrode material can reach the surface by the template region covered and to assemble there be clump.
Yet the Cong Keneng of insulation itself is because a small amount of hydrone that absorbs and moistening, thereby and influences the total capacitance of electrode.This causes measuring accuracy to reduce.
In addition, when (for example, being higher than 180 ℃), the electrode of being processed by tantalum is easy to oxidation at high temperature, thereby this changes the effective surface area of electrode equally and reduces measuring accuracy.
Summary of the invention
Therefore, the purpose of this invention is to provide a kind of than the improved pressure transducer of prior art.
This purpose is passed through according to the present invention to realize that with lower pressure sensor it comprises:
Basically the matrix of rigidity and at least one elasticity measurement film, the surface-welding of this measurement film and matrix is to be formed on hermetically enclosed measurement chamber, edge, wherein
Matrix and/or measurement film comprise pottery, glass or monocrystal material,
Measure film and have at least one first electrode towards the surface of matrix,
The surface of matrix has at least one towards second electrode of measuring film, wherein
Electric capacity between first electrode and second electrode is measuring of testing pressure, it is characterized in that,
At least one electrode has the conductive layer that comprises metal and glass in first and second electrodes; Wherein metal comprises the coexisting region of precious metal element; Wherein this precious metal element is Au and Pt; And the glass that conductive layer comprises is stable at 900 ℃ under high vacuum, wherein not leaded the and boron except this glass the impurity that exists under the stable condition.
In one embodiment of the invention, the metal of conductive layer and the volume ratio of glass preferably are not more than 3: 1 as being not more than 4: 1, further preferably are not more than 2.5: 1, particularly preferably are not more than 2.3: 1.In addition, the metal of conductive layer and the volume ratio of glass preferably are not less than 1.8: 1 as being not less than 1.5: 1, further preferably are not less than 2.1: 1.
In a currently preferred embodiment of the present invention, the noble metal of conductive layer and the volume ratio of glass are about 2.2: 1.
Especially, noble metal can be 10 families or 11 family's precious metal elements of the periodic table of elements (referring to Chemical and Engineering News, 63 (5), 27,1985) according to so-called new representation.Current preferably Au, Ag, Pd and Pt.In one embodiment of the invention, conductive layer comprises at least a 11 family's noble metals and/or at least a 10 family's noble metals.
Noble metal can be present in the conductive layer with alloy and/or element form.
In the first embodiment of the present invention, the equivalent proportion of 11 family's metals and 10 family's metals (that is, the ratio of the atomicity of 11 family's metals and the atomicity of 10 family's metals) for example is not more than 20: 1, preferably is not more than 10: 1, and further preferably is not more than 5: 1.According to first embodiment, the equivalent proportion of 11 family's metals and 10 family's metals for example is not less than 1.5: 1, preferably is not less than 2: 1, and further preferably is not less than 3: 1.In a currently preferred embodiment of the present invention, the equivalent proportion of 11 family's metals and 10 family's metals is about 4: 1.
In another embodiment of the present invention, the equivalent proportion of 10 family's metals and 11 family's metals for example is not less than 3.5: 1, preferably is not less than 4: 1, further preferably is not less than 5: 1.
In one embodiment of the invention, conductive layer comprises glass, the not leaded and/or boron except this glass the impurity that exists under the stable condition.Verified because thermal behavior reduces or because some composition evaporation under high-temperature vacuum, and the glass that contains B and/or contain Pb is unaccommodated.
In one embodiment of the invention, conductive layer comprises glass, and this glass for example contains baryta, monox and/or aluminium oxide.
For example, glass contains the SiO that is not less than 45 quality % and is not more than 60 quality %
2, be not less than 30 quality % and be not more than the BaO of 40 quality %, and be not less than 8 quality % and be not more than the Al of 16 quality %
2O
3
Preferably, glass contains the SiO that is not less than 50 quality % and is not more than 56 quality %
2, be not less than 33 quality % and be not more than the BaO of 37 quality %, and be not less than 10 quality % and be not more than the Al of 14 quality %
2O
3
In a currently preferred embodiment, glass contains the SiO of 53.1 quality %
2, the BaO of 35.1 quality % and the Al of 11.8 quality %
2O
3
Preferably, use during roasting the not glass of excessive crystallization, because the crystal region that manifests will destroy adhesion strength and cause the increase of moisture-sensitive degree.
The material of conductive layer can be used as paste and utilizes serigraphy and put on the surface of matrix or measure on the surface of film.Paste comprises composition and the organic binder bond and the solvent of conductive layer, perhaps in calcination steps subsequently, from material, volatilizees in the drying steps of this solvent after serigraphy.
Come in quality, paste can for example about 1/4～2/5 be that organic binder bond and about 3/4～3/5 is metal and glass mixture.Come in quality, current preferred paste about 1/3 is that organic binder bond and about 2/3 is metal and glass mixture.
Paste can for example be a noble metal granule, and its BET specific surface is not less than 0.08m^2/g, preferably is not less than 0.12m^2/g, further preferably is not less than about 0.25m^2/g.In current preferred paste, the BET specific surface of Au particle is about 0.3m^2/g.This is corresponding to the mean particle size of about 1 μ m.For Pt corresponding particle size demand is arranged equally.
Also can use thinner particle.In a kind of paste, for example use the Pt particle of BET specific surface as 8m^2/g.
The glass ingredient in the paste or the grain size of glass can for example be at most 5 μ m.Preferably, mean particle size is between 0.5 μ m to 5 μ m.
For example ethyl cellulose in the terpinol or dibutyl phthalate can be used as organic binder bond.
In order to utilize method for printing screen to apply paste, for example can use 400 sieve meshes or size of mesh to be about the stainless steel mesh of 37 μ m.Current preferably application is two-layer at least.Interlamellar spacing for example is 0.15mm to 0.5mm.
Utilize the bed thickness of the paste of serigraphy coating can for example be not more than 100 μ m, preferably be not more than 50 μ m, particularly preferably be not more than 25 μ m.
After applying paste, for example carry out drying in about 100 ℃ to 200 ℃ temperature that raises slightly.Current preferred baking temperature is 140 ℃ to 160 ℃.The dry duration depends on the bed thickness and the selected temperature of paste.Yet rule of thumb, a few minutes are all enough until the drying time at a quarter of an hour.
After drying, with layer roasting, temperature can rise to maximum temperature for this reason, but layer keeps preset time at this maximum temperature, until beginning to cool down.Maximum temperature during the roasting reaches at least 900 ℃, preferably at least about 930 ℃ to 960 ℃, and particularly preferably about 950 ℃.The duration of roasting can for example be one to two hour, and wherein maximum temperature keeps about 10 to 20 minutes just enough.
The final bed thickness of layer through roasting preferably is not more than 8 μ m, further preferably is not more than 6 μ m, particularly preferably is not more than 4 μ m.
The salient point of the conductive layer that on ceramic body, prepares by this way preferably is, they bear subsequently about 10
-6High vacuum soldering under the pressure of mbar and the about 910 ℃ temperature and do not discharge decomposition product.This high vacuum soldering for example is used for the ceramic component of sensor and the welding of active hard solder.This demand is very important, because the glass decomposition product that absorbs can change the wettable of the Free Surface part of the ceramic body that will weld, makes active hard solder to arrive on these surface portions during the high vacuum.In this case, no longer can carry out the high vacuum soldering.Particularly observe this decomposition product containing Pb or contain in the situation of glass of B.
Therefore, pressure transducer of the present invention has conductive layer, and it is heat-staple and is attached to ceramic substrate securely.
Description of drawings
Now explain the present invention according to the embodiment that puts down in writing in the accompanying drawing, in the accompanying drawing:
Fig. 1 is the longitudinal section of Capacitive Absolute Pressure Sensor of the present invention;
Fig. 2 is the longitudinal section of condenser type two chamber differential pressure pickups of the present invention; With
Fig. 3 is the longitudinal section of condenser type list of the present invention chamber differential pressure pickup.
Embodiment
The capacitance pressure transducer, that Fig. 1 shows is an absolute pressure transducer.It has the ceramic matrix 1 of primary circle bar shape and measures film 2 with discoid pottery, and its end face at matrix 1 is connected to matrix 1, to form the measurement chamber 3 of densification.For this reason, measuring film 2 utilizes activated solder ring 4 in 910 ℃ high vacuum soldering, to weld with matrix 1.In this case, through the material thickness of activated solder ring, the distance between the end face of scheduled measurement film 2 and matrix 1.Distance can for example be 20 to 100 μ m after soldering.
In pressure chamber 3, first electrode 5 is set on the end face of matrix 1, on the surface of measuring the chamber, second electrode 6 is set at measurement film 2.In measuring operation, measure film 2 and depend on pressure and deformation, thereby the electric capacity between first and second electrodes changes.Electrode has the conductive layer of being processed by electrode material according to the present invention.
Can utilize any feedthrough known in the art to realize the contact of electrode.For example, metal pins 7 can be introduced in the suitable hole of running through matrix 1, and wherein metal pins 7 additionally is utilized active hard solder seal and seals and fixing.Further, can utilize active hard solder and from electrode of the outside surface of pressure transducer contact.
Further, pressure transducer of the present invention can be relative pressure sensor, differential pressure sensor.
Compare with absolute pressure transducer, relative pressure sensor has the reference gas path, and it can for example have a hole of running through matrix.
Differential pressure pickup may be embodied as the differential pressure pickup in two chambeies or the differential pressure pickup in single chamber.
The differential pressure pickup that has shown two chambeies among Fig. 2.It has first cylindrical base 11 and second cylindrical base 12 and measures film 13, and this measurement film utilizes the end face welding of the active hard solder 17 and first and second matrixes, to form the first measurement chamber 14 and the second measurement chamber 15.Each is measured chamber and has at least one and measure electric capacity, and this measurements electric capacity is formed between the electrode 16 on the end face of the electrode 16 measured on the film and corresponding matrix and through suitable feedthrough and obtains detection.Electrode has the conductive layer of being processed by electrode material according to the present invention.Measure the chamber separately by supplying media pressure for two through the hole of running through relevant matrix.
At last, Fig. 3 has shown a condenser type list chamber differential pressure pickup.On two end faces of cylindrical base 21; Utilize one of active hard solder 28 welding to measure the chamber respectively; Thereby measure formation first measurement chamber 24 between film 22 and the matrix first, and the formation second portion is measured chamber 25 between the second measurement film 23 and matrix.Two parts are measured the chamber and are communicated through the passage 26 that runs through matrix 21 and be filled transmit fluid, for example silicone oil.In each part measurement chamber, pair of electrodes is set, one of them electrode is being measured on the film, and an electrode is on the end face of matrix.For example contact the electrode of matrix side through the lead that extends to the matrix end face from outer surface of matrix.
Electrode has the conductive layer of being processed by electrode material according to the present invention, and this electrode material contains glass and metal.Metal is at least a precious metal element or two kinds of precious metal elements.
In currently preferred embodiment, the metal ingredient of the electrode material of pressure transducer of the present invention and the volume ratio of glass ingredient are about 2.2: 1.Along with metal ingredient raises, conductance increases, and the adhesive strength of layer reduces.Certain reduction of adhesive strength is permissible.Along with metal ingredient reduces, the corresponding decline of conductance.
In mass, current preferred glass has following composition: 50% to 56% SiO
2, 33% to 37% BaO, 10% to 14% Al
2O
3
Metal comprises that mass ratio is about 4: 1 Au and the potpourri of Pt, and wherein the mean size of gold grain is extremely about 1.2 μ m of about 0.5 μ m, and the mean size of Pt particle is that about 0.03 μ m is to about 0.05 μ m.
In the making of electrode, solid (glass and metal) is mixed organic binder bond is to be formed on the paste that 2/3 solid and about 1/3 cementing agent are arranged in the quality approximately.
Paste is utilized serigraphy and in one or two stroke, is coated on the corundum ceramic substrate, to form the conductive layer of electrode.The corundum ceramic substrate is matrix and measurement film.
After about 15 minutes of about 150 ℃ of dryings, the roasting layer, wherein the maximum temperature of calcination steps is about 950 ℃.
In order to make pressure transducer of the present invention, in the high vacuum welding process, utilize active hard solder welding to have the matrix and the film of electrode of the present invention.
Claims (24)
1. pressure transducer comprises:
At least one matrix (1) and at least one elasticity measurement film (2), the surface-welding of this measurement film and matrix is to be formed on hermetically enclosed measurement chamber (3), edge; Wherein
Matrix (1) and/or measurement film (2) comprise pottery, glass or monocrystal material,
Measure film (2) and have at least one first electrode (6), this first electrode is towards the surface of matrix (1),
The surface of matrix (1) has at least one second electrode (5), and this second electrode is towards measuring film (2), wherein
Electric capacity between first electrode and second electrode is measuring of testing pressure; It is characterized in that,
At least one electrode has the conductive layer that comprises metal and glass in first and second electrodes, and wherein said metal comprises the coexisting region of precious metal element, and wherein said precious metal element is Au and Pt, and
The glass that said conductive layer comprises is stable at 900 ℃ under high vacuum, wherein not leaded the and boron except this glass the impurity that exists under the stable condition.
2. pressure transducer according to claim 1, wherein, the metal of conductive layer and the volume ratio of glass are not more than 4: 1.
3. pressure transducer according to claim 2, wherein, the metal of conductive layer and the volume ratio of glass are not more than 3: 1.
4. pressure transducer according to claim 3, wherein, the metal of conductive layer and the volume ratio of glass are not more than 2.5: 1.
5. pressure transducer according to claim 4, wherein, the metal of conductive layer and the volume ratio of glass are not more than 2.3: 1.
6. pressure transducer according to claim 1, wherein, the metal of conductive layer and the volume ratio of glass are not less than 1.5: 1.
7. pressure transducer according to claim 6, wherein, the metal of conductive layer and the volume ratio of glass are not less than 1.8: 1.
8. pressure transducer according to claim 7, wherein, the metal of conductive layer and the volume ratio of glass are not less than 2.1: 1.
9. according to the described pressure transducer of one of claim 1～8, wherein, the equivalent proportion of Au and Pt is not more than 20: 1.
10. pressure transducer according to claim 9, wherein, the equivalent proportion of Au and Pt is not more than 10: 1.
11. pressure transducer according to claim 10, wherein, the equivalent proportion of Au and Pt is not more than 5: 1.
12. according to the described pressure transducer of one of claim 1～8, wherein, the equivalent proportion of Au and Pt is not less than 1.5: 1.
13. pressure transducer according to claim 12, wherein, the equivalent proportion of Au and Pt is not less than 2: 1.
14. pressure transducer according to claim 13, wherein, the equivalent proportion of Au and Pt is not less than 3: 1.
15. according to the described pressure transducer of one of claim 1～8, wherein, the equivalent proportion of Pt and Au is not less than 3.5: 1.
16. pressure transducer according to claim 15, wherein, the equivalent proportion of Pt and Au is not less than 4: 1.
17. pressure transducer according to claim 16, wherein, the equivalent proportion of Pt and Au is not less than 5: 1.
18. according to the described pressure transducer of one of claim 1～8, wherein, conductive layer comprises glass, this glass contains baryta, monox and/or aluminium oxide.
19. pressure transducer according to claim 18, wherein, the glass that this conductive layer comprises contains the SiO that is not less than 45 quality % and is not more than 60 quality %
2, be not less than 30 quality % and be not more than the BaO of 40 quality %, and be not less than 8 quality % and be not more than the Al of 16 quality %
2O
3
20. pressure transducer according to claim 19, wherein, conductive layer comprises glass, and this glass contains the SiO that is not less than 50 quality % and is not more than 56 quality %
2, be not less than 33 quality % and be not more than the BaO of 37 quality %, and be not less than 10 quality % and be not more than the Al of 14 quality %
2O
3
21. according to the described pressure transducer of one of claim 1～8, wherein, the thickness of conductive layer is not more than 8 μ m.
22. pressure transducer according to claim 21, wherein, the thickness of conductive layer is not more than 6 μ m.
23. pressure transducer according to claim 22, wherein, the thickness of conductive layer is not more than 4 μ m.
24. according to the described pressure transducer of one of claim 1～8, wherein, pressure transducer is absolute pressure transducer, relative pressure sensor differential pressure sensor.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007026243A DE102007026243A1 (en) | 2007-06-04 | 2007-06-04 | Capacitive pressure sensor |
| DE102007026243.6 | 2007-06-04 | ||
| PCT/EP2008/056880 WO2008148779A1 (en) | 2007-06-04 | 2008-06-04 | Capacitive pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101680813A CN101680813A (en) | 2010-03-24 |
| CN101680813B true CN101680813B (en) | 2012-05-30 |
Family
ID=39810149
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200880018902.0A Expired - Fee Related CN101680813B (en) | 2007-06-04 | 2008-06-04 | Capacitive pressure sensor |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8104353B2 (en) |
| EP (1) | EP2162714B1 (en) |
| JP (1) | JP5033913B2 (en) |
| CN (1) | CN101680813B (en) |
| DE (1) | DE102007026243A1 (en) |
| RU (1) | RU2441207C2 (en) |
| WO (1) | WO2008148779A1 (en) |
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| CN1460093A (en) * | 2001-03-30 | 2003-12-03 | Tdk株式会社 | Piezoelectric porcelain and method for preparation thereof and piezoelectric element |
| CN1514234A (en) * | 2002-12-31 | 2004-07-21 | 中国科学院电子学研究所 | Preparation method of reference electrode compatible with micro electromechanical system technology |
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| US3929609A (en) * | 1973-01-31 | 1975-12-30 | Owens Illinois Inc | Method and apparatus using solid sensor electrode |
| US3808480A (en) * | 1973-04-16 | 1974-04-30 | Bunker Ramo | Capacitive pressure transducer |
| US4184189A (en) * | 1978-08-14 | 1980-01-15 | Motorola, Inc. | Capacitive pressure sensor and method of making it |
| US4287553A (en) * | 1980-06-06 | 1981-09-01 | The Bendix Corporation | Capacitive pressure transducer |
| JPS5811565A (en) * | 1981-07-14 | 1983-01-22 | Murata Mfg Co Ltd | Electrically conductive paint |
| US4530029A (en) * | 1984-03-12 | 1985-07-16 | United Technologies Corporation | Capacitive pressure sensor with low parasitic capacitance |
| US4567151A (en) * | 1984-08-10 | 1986-01-28 | E. I. Du Pont De Nemours And Company | Binder glass of Bi2 O3 -SiO2 -GeO2 (-PbO optional) admixed with ZnO/ZnO and Bi2 O3 |
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| DK0544934T3 (en) * | 1991-11-30 | 1997-03-17 | Endress Hauser Gmbh Co | |
| US5571970A (en) * | 1993-03-30 | 1996-11-05 | Honda Motor Co., Ltd. | Pressure sensor |
| JP3039403B2 (en) * | 1996-12-06 | 2000-05-08 | 株式会社村田製作所 | Multilayer ceramic capacitors |
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| EP1039284A1 (en) * | 1999-03-24 | 2000-09-27 | ENVEC Mess- und Regeltechnik GmbH + Co. | Capacitive sensor of pressure or differential pressure |
| JP4423707B2 (en) * | 1999-07-22 | 2010-03-03 | Ｔｄｋ株式会社 | Manufacturing method of multilayer ceramic electronic component |
| US6148674A (en) * | 1999-09-15 | 2000-11-21 | Park; Kyong M. | Shielded capacitive pressure sensor |
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2007
- 2007-06-04 DE DE102007026243A patent/DE102007026243A1/en not_active Withdrawn
-
2008
- 2008-06-04 WO PCT/EP2008/056880 patent/WO2008148779A1/en active Application Filing
- 2008-06-04 RU RU2009149204/28A patent/RU2441207C2/en not_active IP Right Cessation
- 2008-06-04 US US12/451,209 patent/US8104353B2/en not_active Expired - Fee Related
- 2008-06-04 JP JP2010510775A patent/JP5033913B2/en not_active Expired - Fee Related
- 2008-06-04 EP EP08760463.3A patent/EP2162714B1/en not_active Not-in-force
- 2008-06-04 CN CN200880018902.0A patent/CN101680813B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4225632A (en) * | 1977-11-11 | 1980-09-30 | Motorola, Inc. | Fabrication of capacitive transducers |
| US6374680B1 (en) * | 1999-03-24 | 2002-04-23 | Endress + Hauser Gmbh + Co. | Capacitive pressure sensor or capacitive differential pressure sensor |
| CN1460093A (en) * | 2001-03-30 | 2003-12-03 | Tdk株式会社 | Piezoelectric porcelain and method for preparation thereof and piezoelectric element |
| CN1514234A (en) * | 2002-12-31 | 2004-07-21 | 中国科学院电子学研究所 | Preparation method of reference electrode compatible with micro electromechanical system technology |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101680813A (en) | 2010-03-24 |
| US8104353B2 (en) | 2012-01-31 |
| JP5033913B2 (en) | 2012-09-26 |
| US20100199778A1 (en) | 2010-08-12 |
| EP2162714A1 (en) | 2010-03-17 |
| JP2010538242A (en) | 2010-12-09 |
| EP2162714B1 (en) | 2016-02-24 |
| RU2009149204A (en) | 2011-07-20 |
| WO2008148779A1 (en) | 2008-12-11 |
| RU2441207C2 (en) | 2012-01-27 |
| DE102007026243A1 (en) | 2008-12-11 |
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