CN110186366A - A kind of conductive film and preparation method thereof - Google Patents
A kind of conductive film and preparation method thereof Download PDFInfo
- Publication number
- CN110186366A CN110186366A CN201910501371.0A CN201910501371A CN110186366A CN 110186366 A CN110186366 A CN 110186366A CN 201910501371 A CN201910501371 A CN 201910501371A CN 110186366 A CN110186366 A CN 110186366A
- Authority
- CN
- China
- Prior art keywords
- conductive film
- hole
- insulating substrate
- conductive
- conductive material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 239000010408 film Substances 0.000 claims abstract description 83
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 239000004020 conductor Substances 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims abstract description 21
- 238000005498 polishing Methods 0.000 claims abstract description 17
- 238000000427 thin-film deposition Methods 0.000 claims abstract description 11
- 238000005429 filling process Methods 0.000 claims abstract description 9
- 238000007650 screen-printing Methods 0.000 claims abstract description 9
- 238000000926 separation method Methods 0.000 claims abstract description 7
- 239000011810 insulating material Substances 0.000 claims abstract description 4
- 239000002002 slurry Substances 0.000 claims description 30
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 238000001035 drying Methods 0.000 claims description 15
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- 239000010453 quartz Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000000428 dust Substances 0.000 claims description 3
- 239000002305 electric material Substances 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000009501 film coating Methods 0.000 claims 1
- 238000006073 displacement reaction Methods 0.000 abstract description 14
- 230000005684 electric field Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 239000002131 composite material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/02—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring length, width or thickness
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Abstract
The present invention relates to a kind of conductive films and preparation method thereof; there is conductive film standard degree Kelvin to protect ring structure; by insulated separation, form with concentric circular conductive film and ring shaped conductive film; preparation flow are as follows: (1), as substrate, to fill conductive material into through hole using filling process with the insulating materials there are two through hole；(2) surface polishing to the insulating substrate for being filled with conductive material in through hole；(3) silk-screen printing or thin film deposition processes are used; the conductive film that standard degree Kelvin protection ring structure is made in the one side of the sanding and polishing of the insulating substrate of conductive material is filled in through hole; circular conductive film is connected with the conductive material in a through hole, and ring shaped conductive film is connected with the conductive material in another through hole.The conductive film on insulating substrate surface is connected to conductive material in through hole in insulating substrate, it is ensured that circular conductive film and ring shaped conductive film integrality improve field uniformity, so as to improve the performance of capacitance displacement sensor.
Description
Technical field
The present invention relates to a kind of technical field of the production of conductive film more particularly to a kind of conductive film and preparation method thereof,
Its on insulating substrate insulated separation, with the complete circular conductive film in concentric, surface and the complete ring shaped conductive in surface
The production method of the standard degree Kelvin protection ring structural conductive film of film composition.
Background technique
Capacitance displacement sensor is with dynamic characteristic is good, resolving power is high, advantages of simple structure and simple is very suitable to high-precision, non-
Contact dynamic measures, and has been widely used for the high-acruracy survey in the fields such as displacement, pressure.In capacitance displacement sensor, capacitor
(C) relationship between electrode between distance (d) may be expressed as:
C=εrε0A/d (1)
Wherein, εrThe medium relative dielectric constant between electrode, ε0For permittivity of vacuum, A area coverage between pole plate, d
For pole plate spacing.Distance between polar plate variation, causes capacitance sensor capacitance variations, to realize that displacement, pressure etc. measure.It is above-mentioned
The condition that equation (1) is set up is electric fields uniform distribution between capacitance displacement sensor pole plate.It will lead to electricity since fringe field exists
Hold non-uniform electric between displacement sensor two-plate, but with spatial variations, lead to capacitance displacement sensor signal
Distortion.In order to minimize marginal effect of electric field, the uniformity of field distribution is improved, generally uses text in capacitance sensor probe
Offer [1] Journal Applied Physics 1975,46,2486-2490 [W.C.Heerens, F.C.Vermeulen,
Capacitance of kelvin guard-ring capacitors with modified edge geometry,
J.Appl.Phys.46 (1975) 2486-2490] in report degree Kelvin protection ring (Kelvin Guard Ring) structure electricity
Pole (see Fig. 5 a) is made of working electrode 1 and protection ring.Working electrode 2 is generally detected object, working face in Fig. 5 b
Product is much larger than working electrode 1.In the process of running, working electrode 1 and protection ring potential are consistent, and substantially reduce Electric field edge
Effect.
In addition, capacitance sensor electrode thickness is bigger, marginal effect of electric field is bigger.It is thick in order to reduce capacitance sensor pole plate
Degree, people are also with the thicker metal of the thin conductive film substitution degree Kelvin ring structure of the degree Kelvin protection ring structure on insulating substrate
Plate reduces marginal effect of electric field as electrode.However, when using the conductive film of degree Kelvin ring structure, in order to in protection ring
Between working electrode connecting lead wire, conductive film often uses document [3] Nature Nanotechnology 2011,6,496-500
Report off-gauge degree Kelvin protection ring structure (see Fig. 6), this can introduce additional marginal effect of electric field, damage capacitive displacement
Sensor performance.
Therefore, finding a kind of make on insulating substrate has the conductive film of standard degree Kelvin protection ring structure as electricity
Pole is to reduce capacitance displacement sensor marginal effect of electric field, improves field distribution uniformity, improves the pass of capacitance sensor performance
Key.
Summary of the invention
The purpose of the present invention is: avoid above-mentioned capacitance displacement sensor probe with degree Kelvin off-gauge on insulating substrate guarantor
When the conductive film of protection structure is electrode, there are problems that biggish marginal effect of electric field, proposes a kind of in insulating substrate surface tool
There is the production method of the conductive film of standard degree Kelvin protection ring structure, to reduce capacitance displacement sensor using conductive film as electrode
When marginal effect of electric field, provide capacitance displacement sensor performance.
The technical solution adopted by the present invention is that: a kind of conductive film, there is conductive film standard degree Kelvin to protect ring structure, by exhausted
Fate from, with the complete circular conductive film in concentric, surface and surface complete ring shaped conductive film composition；The standard is opened
Er Fen protects the conductive film 2 of ring structure to have the concentric complete circular conductive film 201 in surface and surface complete by insulated separation
Whole ring shaped conductive film 202 forms；The complete circular conductive film 201 in surface and running through filled with conductive material 4
Hole 301 is connected；The complete ring shaped conductive film 202 in surface is connected with another through hole 302 filled with conductive material 4.
A kind of production method of conductive film protects the conductive film 2 of ring structure on insulating substrate 1 with standard degree Kelvin
Preparation process is as follows:
Step (a) is using the insulating materials of the through hole 3 with there are two as insulating substrate 1, using filling process into through hole 3
Fill conductive material 4；
Step (b) carries out sanding and polishing to a surface 5 of the insulating substrate for being filled with conductive material 4 in through hole 3；
Step (c) uses silk-screen printing or thin film deposition processes, and the insulation base of conductive material 4 is filled in through hole 3
The conductive film 2 of standard degree Kelvin protection ring structure is made on one surface 5 of the sanding and polishing of plate.
Described in step (a) into the through hole 3 of insulating substrate 1 fill conductive material 4 filling process steps are as follows:
(a1) electrocondution slurry 401 is first poured into through hole 3；
(a2) under the conditions of temperature is 50~200 DEG C, the drying of the electrocondution slurry 401 of through hole 3 will be poured into；
(a3) under the conditions of temperature is 100~850 DEG C, the electrocondution slurry 401 after drying is sintered, is obtained
Conductive material 4；
(a4) step (a1), (a2) and (a3) is repeated, until completely by conduction material in the through hole 3 of insulating substrate 1
4 filling of material.
1 material of insulating substrate is any one or glass in aluminium oxide, zirconium oxide, silicon nitride or their compound species
Glass or quartz or silicon with silicon oxide layer.
The conductive component of the electrocondution slurry 401 is in Au Ag Pt Pd, tungsten, copper, nickel or carbon dust and their compound species
Any one.
Silk-screen printing technique described in step (c) is specific as follows:
(c1) using the silk screen with standard degree Kelvin protection ring structure graph as mask halftone, electrocondution slurry 401 is shifted
On the polished surface of insulating substrate 1 in through hole (3) filled with conductive material 4；
(c2) under the conditions of temperature is 50~200 DEG C, by the baking of the electrocondution slurry 401 on the polished surface of insulating substrate 1
It is dry；
(c3) under the conditions of temperature is 100~850 DEG C, the electrocondution slurry 401 after drying is sintered, exhausted
The conductive film 2 for obtaining having standard degree Kelvin structure on the polished surface of edge substrate 1.
The thin film deposition processes are ion film plating or sputter coating or evaporation coating.
When using thin film deposition processes, 2 groups of the conductive film be divided into conductive metal or carbon, or combinations thereof.
As a result, the beneficial effects of the present invention are: introducing the through hole of filling conductive material in the insulating substrate, and lead
Electric material is intact with insulating substrate surface and there is standard degree Kelvin ring structure conductive film to contact, this is ensuring standard degree Kelvin ring
While conductive film is connected to outside lead, fringe field effects can be reduced, improve capacitance displacement sensor performance.
Detailed description of the invention
Fig. 1 is the insulating substrate cross section structure schematic diagram with through hole.
Fig. 2 is to have standard degree Kelvin ring structure conduction membrane superficial tissue schematic diagram on insulating substrate.
Fig. 3 is to have standard degree Kelvin ring structure conductive film cross section structure schematic diagram on insulating substrate.
Fig. 4 is the method flow schematic diagram for making conductive film.
Fig. 5 a is the electrode transverse sectional view of prior art degree Kelvin protection ring (Kelvin Guard Ring) structure.
Fig. 5 b is the electrode longitudinal sectional view of prior art degree Kelvin protection ring (Kelvin Guard Ring) structure.
Fig. 6 is the off-gauge degree Kelvin protection ring structural conductive membrane superficial tissue schematic diagram of the prior art.
In fig. 1, fig. 2 and fig. 3: 1 is insulating substrate, such as aluminium oxide, quartz；201 be circular conductive film；202 be ring
Shape conductive film；3 are through hole；4 are through the conductive material in hole.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.
A kind of production method based on conductive film, including using canned technique to fill out in two through holes on insulating substrate
Fill conductive material；Using silk-screen printing or thin film deposition processes, on insulating substrate surface, production has standard degree Kelvin protection ring knot
The conductive film of structure；Wherein the conductive film of the standard degree Kelvin protection ring structure is by the complete with concentric surface of insulated separation
Circular conductive film (201) and surface complete ring shaped conductive film composition；The complete circular conductive film in surface is filled out with one
Through hole filled with conductive material is connected；The complete ring shaped conductive film in surface and another running through filled with conductive material
Hole is connected.Specific preparation process is as follows:
Step 1:, as insulating substrate, to be filled using filling process into through hole with the insulating materials there are two through hole
Electrocondution slurry；
Step 2: under the conditions of temperature is 50~200 DEG C, the drying of the electrocondution slurry of through hole will be poured into；
Step 3: under the conditions of temperature is 100~900 DEG C, the electrocondution slurry after drying being sintered, is obtained
Conductive material；
Step 4: step 1, step 2 and step 3 is repeated, until completely by conductive material in the through hole of insulating substrate
Filling.
Step 5: sanding and polishing is carried out to a surface of the insulating substrate for being filled with conductive material in through hole；
Step 6: using silk-screen printing or thin film deposition processes, the insulating substrate of conductive material is filled in through hole
The conductive film of standard degree Kelvin protection ring structure is made in the one side of sanding and polishing.
The conductive film of the standard degree Kelvin protection ring structure is by the completely round with concentric surface of insulated separation
The complete ring shaped conductive film composition of conductive film and surface.
The complete circular conductive film in surface is connected with a through hole filled with conductive material.
The complete ring shaped conductive film in surface is connected with another through hole filled with conductive material.
Steps are as follows for the filling process of filling conductive material in the through hole to insulating substrate:
(a1) electrocondution slurry is first poured into through hole；
(a2) under the conditions of temperature is 50~200 DEG C, the drying of the electrocondution slurry of through hole will be poured into；
(a3) under the conditions of temperature is 100~900 DEG C, the electrocondution slurry after drying is sintered, is led
Electric material；
(a4) step (a1), (a2) and (a3) is repeated, until completely by conductive material in the through hole of insulating substrate
Filling.
The insulating substrate material is any one or glass in aluminium oxide, zirconium oxide, silicon nitride or their compound species
Glass or quartz or silicon with silicon oxide layer.
The conductive component of the electrocondution slurry is in Au Ag Pt Pd, tungsten, copper, nickel or carbon dust and their compound species
Any one.
The silk-screen printing technique is specific as follows:
(c1) using the silk screen with standard degree Kelvin protection ring structure graph as mask halftone, electrocondution slurry is transferred to and is passed through
On the polished surface of insulating substrate in perforation filled with conductive material；
(c2) under the conditions of temperature is 50~200 DEG C, by the drying of the electrocondution slurry on the polished surface of insulating substrate；
(c3) under the conditions of temperature is 100~850 DEG C, the electrocondution slurry after drying is sintered, is being insulated
The conductive film for obtaining having standard degree Kelvin structure on the polished surface of substrate.
The thin film deposition processes are ion film plating or sputter coating or evaporation coating.
When using thin film deposition processes, the conduction membrane component be conductive metal or carbon, or combinations thereof.
Embodiment 1
Step 110, using band there are two through hole round alumina ceramic material as insulating substrate 1, using filling process
Palladium-silver composite conducting slurry 401 is filled into through hole 3；
Step 120, temperature be 100 DEG C under the conditions of, palladium-silver composite conducting slurry 401 drying of through hole will be poured into；
Step 130, temperature be 600 DEG C under the conditions of, will pass through in hole dry after palladium-silver composite conducting slurry 401
It is sintered, obtains conductive material 4；
Step 110, step 120 and step 130 is repeated in step 140, until in the through hole 3 of insulating substrate 1 completely
It is filled by conductive material 4；
Step 150 carries out sanding and polishing to a surface 5 of the insulating substrate 1 for being filled with conductive material 4 in through hole 3；
Step 160, using silk-screen printing technique, the polishing of the insulating substrate 1 of conductive material 4 is filled in through hole 3
Palladium-silver composite conductive film 2 of production standard degree Kelvin protection ring structure on one surface 5 of polishing.
Embodiment 2
Step 110, using band, there are two the circular quartz materials of through hole as insulating substrate 1, using filling process to running through
Conductive silver slurry 401 is filled in hole 3；
Step 120, temperature be 60 DEG C under the conditions of, the drying of the conductive silver slurry 401 of through hole will be poured into；
Step 130, temperature be 200 DEG C under the conditions of, will pass through in hole dry after conductive silver slurry 401 be sintered
Processing, obtains conductive material 4
Step 110, step 120 and step 130 is repeated in step 140, until in the through hole 3 of insulating substrate 1 completely
It is filled by conductive material 4；
Step 150 carries out sanding and polishing to a surface 5 of the insulating substrate 1 for being filled with conductive material 4 in through hole 3；
Step 160, using sputter coating process, the polishing of the insulating substrate 1 of conductive material 4 is filled in through hole 3
The platinum film 2 of production standard degree Kelvin protection ring structure on one surface 5 of polishing.
Embodiment 3
Step 110, using band there are two through hole round alumina-zirconium oxide composite material as insulating substrate 1, using filling
Dress technique fills copper electrocondution slurry 401 into through hole 3；
Step 120, temperature be 80 DEG C under the conditions of, the drying of the copper electrocondution slurry 401 of through hole will be poured into；
Step 130, temperature be 300 DEG C under the conditions of, will pass through in hole dry after copper electrocondution slurry 401 be sintered
Processing, obtains conductive material 4；
Step 110, step 120 and step 130 is repeated in step 140, until in the through hole 3 of insulating substrate 1 completely
It is filled by conductive material 4；
Step 150 carries out sanding and polishing to a surface 5 of the insulating substrate 1 for being filled with conductive material 4 in through hole 3；
Step 160, using evaporation coating technique, the polishing of the insulating substrate 1 of conductive material 4 is filled in through hole 3
The aluminium film 2 of production standard degree Kelvin protection ring structure on one surface 5 of polishing.
Claims (8)
1. a kind of conductive film, which is characterized in that conductive film have standard degree Kelvin protect ring structure, by insulated separation, have
The complete ring shaped conductive film composition of concentric, the complete circular conductive film in surface and surface；The standard degree Kelvin protection ring knot
The conductive film (2) of structure has the concentric complete circular conductive film (201) in surface and surface completely annular by insulated separation
Conductive film (202) composition；The complete circular conductive film (201) in surface is filled with the through hole of conductive material (4) with one
(301) it is connected；The complete ring shaped conductive film (202) in surface and another through hole (302) filled with conductive material (4)
It is connected.
2. a kind of production method of conductive film, which is characterized in that on insulating substrate (1) there is standard degree Kelvin to protect ring structure
Conductive film (2) preparation process it is as follows:
There are two the insulating materials of through hole (3) as insulating substrate (1) using band for step (a), using filling process to through hole (3)
Middle filling conductive material (4)；
Step (b) carries out sanding and polishing to a surface (5) of the insulating substrate for being filled with conductive material (4) in through hole (3)；
Step (c) uses silk-screen printing or thin film deposition processes, and the insulation base of conductive material (4) is filled in through hole (3)
The conductive film (2) of standard degree Kelvin protection ring structure is made on a surface (5) for the sanding and polishing of plate.
3. a kind of production method of conductive film according to claim 2, it is characterised in that: to insulation described in step (a)
Steps are as follows for the filling process of filling conductive material (4) in the through hole (3) of substrate (1):
(a1) electrocondution slurry (401) is first poured into through hole (3)；
(a2) under the conditions of temperature is 50~200 DEG C, the drying of the electrocondution slurry (401) of through hole (3) will be poured into；
(a3) under the conditions of temperature is 100~850 DEG C, the electrocondution slurry (401) after drying is sintered, is led
Electric material (4)；
(a4) step (a1), (a2) and (a3) is repeated, until completely by conduction material in the through hole (3) of insulating substrate (1)
Expect (4) filling.
4. a kind of production method of conductive film according to claim 2, it is characterised in that: insulating substrate (1) material
For any one or glass or the quartz in aluminium oxide, zirconium oxide, silicon nitride or their compound species or with silicon oxide layer
Silicon.
5. a kind of production method of conductive film according to claim 2, it is characterised in that: the electrocondution slurry (401)
Conductive component is any one in Au Ag Pt Pd, tungsten, copper, nickel or carbon dust and their compound species.
6. a kind of production method of conductive film according to claim 2, it is characterised in that: screen printing described in step (c)
Dataller's skill is specific as follows:
(c1) using the silk screen with standard degree Kelvin protection ring structure graph as mask halftone, electrocondution slurry (401) is transferred to
On the polished surface of insulating substrate (1) in through hole (3) filled with conductive material (4)；
(c2) under the conditions of temperature is 50~200 DEG C, by the baking of the electrocondution slurry (401) on the polished surface of insulating substrate (1)
It is dry；
(c3) under the conditions of temperature is 100~850 DEG C, the electrocondution slurry (401) after drying is sintered, is being insulated
The conductive film (2) for obtaining that there is standard degree Kelvin structure on the polished surface of substrate (1).
7. a kind of production method of conductive film according to claim 2, it is characterised in that: the thin film deposition processes be from
Sub- plated film or sputter coating or evaporation coating.
8. a kind of production method of conductive film according to claim 2, it is characterised in that: when using thin film deposition processes,
Conductive film (2) group be divided into conductive metal or carbon, or combinations thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910501371.0A CN110186366A (en) | 2019-06-11 | 2019-06-11 | A kind of conductive film and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910501371.0A CN110186366A (en) | 2019-06-11 | 2019-06-11 | A kind of conductive film and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110186366A true CN110186366A (en) | 2019-08-30 |
Family
ID=67721249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910501371.0A Pending CN110186366A (en) | 2019-06-11 | 2019-06-11 | A kind of conductive film and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110186366A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113130117A (en) * | 2019-12-31 | 2021-07-16 | 龙岩岳凯科技有限公司 | Conductive flexible wire and manufacturing method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2117588U (en) * | 1992-03-18 | 1992-09-30 | 水利部、能源部地质勘探机电研究所 | Plate condenser type displacement sensor |
| US20070121972A1 (en) * | 2005-09-26 | 2007-05-31 | Yamaha Corporation | Capacitor microphone and diaphragm therefor |
| US20100223998A1 (en) * | 2009-03-06 | 2010-09-09 | Nanometrics Inc. | Capacitive displacement transducer |
| WO2014121582A1 (en) * | 2013-02-05 | 2014-08-14 | 南昌欧菲光科技有限公司 | Conductive film and manufacturing method thereof |
| CN109357612A (en) * | 2018-11-21 | 2019-02-19 | 中国科学院合肥物质科学研究院 | One kind being used for static liquid level capacitance displacement sensor on-line calibration method |
| CN208736599U (en) * | 2018-10-18 | 2019-04-12 | 沈阳市传感技术研究所 | Using the electrode single-end suspension type capacitive pressure transducer of metal fixed electrode |
| CN109813206A (en) * | 2019-03-04 | 2019-05-28 | 中国科学技术大学 | A kind of capacitance displacement sensor probe based on conductive film |
| CN210374969U (en) * | 2019-06-11 | 2020-04-21 | 中国科学技术大学 | Conducting film |
-
2019
- 2019-06-11 CN CN201910501371.0A patent/CN110186366A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2117588U (en) * | 1992-03-18 | 1992-09-30 | 水利部、能源部地质勘探机电研究所 | Plate condenser type displacement sensor |
| US20070121972A1 (en) * | 2005-09-26 | 2007-05-31 | Yamaha Corporation | Capacitor microphone and diaphragm therefor |
| US20100223998A1 (en) * | 2009-03-06 | 2010-09-09 | Nanometrics Inc. | Capacitive displacement transducer |
| WO2014121582A1 (en) * | 2013-02-05 | 2014-08-14 | 南昌欧菲光科技有限公司 | Conductive film and manufacturing method thereof |
| CN208736599U (en) * | 2018-10-18 | 2019-04-12 | 沈阳市传感技术研究所 | Using the electrode single-end suspension type capacitive pressure transducer of metal fixed electrode |
| CN109357612A (en) * | 2018-11-21 | 2019-02-19 | 中国科学院合肥物质科学研究院 | One kind being used for static liquid level capacitance displacement sensor on-line calibration method |
| CN109813206A (en) * | 2019-03-04 | 2019-05-28 | 中国科学技术大学 | A kind of capacitance displacement sensor probe based on conductive film |
| CN210374969U (en) * | 2019-06-11 | 2020-04-21 | 中国科学技术大学 | Conducting film |
Non-Patent Citations (1)
| Title |
|---|
| 钱玉洁;高理升;王焕钦;马以武;孔德义;熊剑平;王英先;张瑞;: "一种基于厚膜陶瓷电容的微位移传感器", 微纳电子技术, no. 03 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113130117A (en) * | 2019-12-31 | 2021-07-16 | 龙岩岳凯科技有限公司 | Conductive flexible wire and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5324053A (en) | Electrostatic chuck | |
| Pecharromán et al. | Experimental evidence of a giant capacitance in insulator–conductor composites at the percolation threshold | |
| JP5021567B2 (en) | Electrostatic chuck apparatus and semiconductor substrate processing method | |
| CA2082021C (en) | Method of stabilizing the surface properties of objects to be thermally treated in a vacuum | |
| US9281226B2 (en) | Electrostatic chuck having reduced power loss | |
| CN107331509B (en) | Multilayer ceramic electronic component | |
| JP5485486B2 (en) | Diamond-based electrochemical sensor | |
| CN101213147A (en) | Apparatus for measuring a set of electrical characteristics in a plasma | |
| CN108305784A (en) | Laminated ceramic electronic component and its manufacturing method | |
| KR20050018599A (en) | Method of manufacturing electrical resistance heating element | |
| CN103578748A (en) | Laminated ceramic electronic component and method of fabricating the same | |
| CN110186366A (en) | A kind of conductive film and preparation method thereof | |
| US10418265B2 (en) | Sample holder and plasma etching apparatus using same | |
| CN210374969U (en) | Conducting film | |
| US20180087153A1 (en) | Heating device | |
| CA2929270C (en) | High temperature flexural mode piezoelectric dynamic pressure sensor | |
| CN210004943U (en) | capacitance displacement sensor probe based on conductive film | |
| CN109813206B (en) | Capacitive displacement sensor probe based on conductive film | |
| JP2006127900A (en) | Annular heater | |
| JP5187472B2 (en) | Wafer inspection equipment mounting table | |
| CN109473283A (en) | Variable condenser using the external electrode of multilayer ceramic capacitor as fixed electrode | |
| US10971311B2 (en) | Variable capacitor | |
| JP3540277B2 (en) | Touch mode capacitive pressure sensor and method of manufacturing the same | |
| CN112259490A (en) | Electrostatic chuck with heating function and preparation method thereof | |
| JP5556731B2 (en) | Measuring method of electrical characteristics of wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |