CN109791841A - Complex protection component and electronic device comprising the component - Google Patents
Complex protection component and electronic device comprising the component Download PDFInfo
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- CN109791841A CN109791841A CN201780056215.7A CN201780056215A CN109791841A CN 109791841 A CN109791841 A CN 109791841A CN 201780056215 A CN201780056215 A CN 201780056215A CN 109791841 A CN109791841 A CN 109791841A
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- Prior art keywords
- main body
- electrode
- protection location
- internal
- protection component
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- 230000004224 protection Effects 0.000 title claims abstract description 266
- 239000004020 conductor Substances 0.000 claims description 33
- 230000005611 electricity Effects 0.000 claims description 17
- 230000035939 shock Effects 0.000 claims description 12
- 239000003990 capacitor Substances 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 160
- 239000000463 material Substances 0.000 description 42
- 229910052751 metal Inorganic materials 0.000 description 39
- 239000002184 metal Substances 0.000 description 39
- 238000007599 discharging Methods 0.000 description 26
- 238000000034 method Methods 0.000 description 25
- 239000000919 ceramic Substances 0.000 description 23
- 239000011248 coating agent Substances 0.000 description 23
- 238000000576 coating method Methods 0.000 description 23
- 229910052782 aluminium Inorganic materials 0.000 description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 20
- 239000004411 aluminium Substances 0.000 description 19
- 230000008569 process Effects 0.000 description 19
- 239000010949 copper Substances 0.000 description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 12
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 12
- 229910052802 copper Inorganic materials 0.000 description 12
- 238000009713 electroplating Methods 0.000 description 11
- 238000002156 mixing Methods 0.000 description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 10
- 239000011810 insulating material Substances 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- 238000007747 plating Methods 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 10
- 239000000203 mixture Substances 0.000 description 9
- 229910052759 nickel Inorganic materials 0.000 description 9
- 229910002113 barium titanate Inorganic materials 0.000 description 8
- 230000001413 cellular effect Effects 0.000 description 8
- 238000004891 communication Methods 0.000 description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 8
- 230000003071 parasitic effect Effects 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 238000003780 insertion Methods 0.000 description 7
- 230000037431 insertion Effects 0.000 description 7
- 238000009413 insulation Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 229910000416 bismuth oxide Inorganic materials 0.000 description 6
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 238000003475 lamination Methods 0.000 description 6
- 239000002861 polymer material Substances 0.000 description 6
- 238000007639 printing Methods 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 230000006378 damage Effects 0.000 description 5
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 5
- 239000003989 dielectric material Substances 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- 229910052763 palladium Inorganic materials 0.000 description 5
- 239000011148 porous material Substances 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 4
- 229910052797 bismuth Inorganic materials 0.000 description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 4
- UBEWDCMIDFGDOO-UHFFFAOYSA-N cobalt(2+);cobalt(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[Co+2].[Co+3].[Co+3] UBEWDCMIDFGDOO-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 3
- GEIAQOFPUVMAGM-UHFFFAOYSA-N Oxozirconium Chemical compound [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000011575 calcium Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 2
- 229910052810 boron oxide Inorganic materials 0.000 description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 description 2
- ZCCIPPOKBCJFDN-UHFFFAOYSA-N calcium nitrate Chemical compound [Ca+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ZCCIPPOKBCJFDN-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000994 depressogenic effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012774 insulation material Substances 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910000480 nickel oxide Inorganic materials 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- VQYHBXLHGKQYOY-UHFFFAOYSA-N aluminum oxygen(2-) titanium(4+) Chemical compound [O-2].[Al+3].[Ti+4] VQYHBXLHGKQYOY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000012858 resilient material Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium(II) oxide Chemical group [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/40—Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
- H01G2/14—Protection against electric or thermal overload
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Thermistors And Varistors (AREA)
- Ceramic Capacitors (AREA)
Abstract
Exemplary embodiments provide a kind of complex protection component and a kind of electronic device comprising complex protection component.Complex protection component includes: main body;At least two internal electrodes, are placed in main body;At least one protection location is placed in two or is greater than between two internal electrodes;At least two connection electrodes are placed in main body to be connected to two or to be greater than two internal electrodes;At least two external electrodes are placed in body exterior to be connected to two or to be greater than two connection electrodes.Herein, connection electrode is Chong Die at least part of protection location.
Description
Technical field
This disclosure is related to a kind of complex protection component, and more particularly, is related to one kind and is set to various electronics dresses
Complex protection component in setting to protect electronic device or user to influence from voltage and current.
Background technique
The electronic device for having the function of multi-functional such as smart phone includes according to being integrated in one of the various components.
Also, electronic device includes antenna, different frequency bands can be received for each function, include the wireless zone under various frequency bands
Network (wireless LAN), bluetooth (bluetooth) and global positioning system (Global Positioning System;
GPS).Some antennas are the flush type antenna being installed on shell.Therefore, antenna electric of the installing one for that will be installed on shell
It is connected to the contactor of the internal circuit of electronic device.
Simultaneously as emphasize the luxurious image and durability of smart phone recently, therefore more and more provide by metal
Terminating machine made of material.Also that is, provide more and morely edge be made of metal or in addition to display unit shell by made of metal
At smart phone.
However, when using the smart phone with metal shell while being filled by using charger is not authenticated to smart phone
When electric, shock hazard can occur.Also that is, when by using not comprising excess voltage protection or not reflecting using low-quality component
Recognizing when charging or defective charger charge to smart phone can produce dash current (Shock Current).Dash current can
It conducts to the ground terminal of smart phone and in addition conduction is to metal shell, so that the user of contact metal shell can be by electricity
It hits.
Therefore, the group that internal circuit can be prevented to be attributed to electrostatic and be damaged and prevent user by shock hazard
Part is necessary.
As the component for function described above, Korean registered patent the 10-1585604th is provided comprising installation
Main body is placed in the external electrode on circuit board and the main body of the connection electrode for being connected to conductive spacer, external electrode
On bottom surface, connection electrode is placed on the top surface of main body.Also, being respectively connected in external electrode in existing patent
Between electrode be set on two sides (also that is, edge) in main body.For electric shock protection component as described above, 700MHz extremely
S21 insertion loss (frequency characteristic exported after entering) under the wireless communication frequency band of 3GHz needs to be less than -0.5dB.So
And according to existing patent, the electrode due to forming capacitor is formed through with short length and target with narrow diameter
Through-hole, therefore dead resistance and parasitic inductance can increase.Therefore, the S21 under the wireless communication frequency band of 700MHz to 3GHz
Insertion loss will be problematic.
(the relevant technologies file)
Korean registered patent the 10-0876206th
Korean registered patent the 10-1585604th
Summary of the invention
Technical problem
This disclosure provides a kind of complex protection component, is placed in the electronic device of such as smart phone to protect
Electronic device and user are from overvoltage and leakage current.
This disclosure also provides a kind of complex protection component, can prevent user from being rushed by what is inputted by self-charging device
It hits electric shock caused by electric current and protects internal circuit from the overvoltage from external application.
This disclosure also provides a kind of complex protection component, can reduce dead resistance and parasitic inductance to reduce nothing
Loss in line communication band.
Technological means
According to exemplary embodiments, a kind of complex protection component includes: main body;At least two internal electrodes, are set to
In main body;At least one protection location is set to two or is greater than between two internal electrodes;At least two connection electrodes,
It is set in main body and is respectively connected to two or is greater than two internal electrodes;And at least two external electrodes, setting
In body exterior and it is respectively connected to two or is greater than two connection electrodes.Herein, at least the one of connection electrode and protection location
It partly overlaps.
Main body can be formed and being laminated multiple thin slices each other, and external electrode can be respectively formed in it is laminated in thin slice
Side upwardly facing on mutual two surfaces.
On the central part that protection location can be formed in main body on the direction of the length of main body, width and thickness.
Protection location can also include widening parts, and widening parts have at least the one of diameter of the diameter different from other regions
A region.
Connection electrode can be set to the central portion of main body in the length of main body and the direction of width.
The length of each of connection electrode can be equal to or the length greater than main body 1%, and width is equal to or more than
The 5% of the width of main body.
The horizontal surface area of connection electrode can be equal to or less than each of internal electrode horizontal surface area, and protect
The horizontal surface area of unit can be equal to or less than connection electrode horizontal surface area.
The height of connection electrode can be equal to or greater than protection location height.
Two or there can be 100 microns to 1000 microns of height greater than each of two connection electrodes, or protection
Unit can have 5 microns to 600 microns of height.
Two or be greater than two connection electrodes at least one of size and shape in can difference.
Complex protection component can also include the contact component for being connected to one of external electrode.
Capacitor can be formed in two or be greater than between two internal electrodes, and internal electrode it is Chong Die with protection location extremely
A few region may act as discharge electrode.
One of external electrode can be connected to the internal circuit of electronic device, and the other of external electrode can connect
The conductor that can be extremely contacted by external users.
According to another exemplary embodiments, a kind of electronic device includes: complex protection component, being placed in can be by user
To block shock voltage and overvoltage is allowed to pass through between the conductor and internal circuit of contact.Herein, complex protection component includes:
Main body;At least two internal electrodes, are placed in main body;At least one protection location is placed in two or greater than two
Between internal electrode;At least two connection electrodes are placed in main body to be connected to two or to be greater than two internal electrodes;
And at least two external electrodes, body exterior is placed in be connected to two or to be greater than two connection electrodes, and is connected
Electrode is Chong Die at least part of protection location.
One of external electrode can be connected to internal circuit, and the other of external electrode can be connected to conductor.
Electronic device can also include the contact component being placed between conductor and complex protection component.
Progress effect
Because connection electrode is formed in the central part of main body and is formed to have the width for being greater than the width of protection part
Degree, complex protection component according to an embodiment of the present invention can reduce dead resistance and parasitic inductance.It therefore, can be in 700MHz
Reduce the insertion loss of S21 within the scope of to the radio-communication frequencies of 3GHz.
Further, since connection electrode be formed to have be greater than protection part width width, it is possible to prevent due to
Deterioration caused by duplicate ESD voltage, and the increase of discharge inception voltage can be inhibited.
Detailed description of the invention
Fig. 1 is the complex protection element cross-section figure according to exemplary embodiments.
Fig. 2 is the complex protection element cross-section figure according to exemplary embodiments.
Fig. 3 and Fig. 4 is the complex protection element cross-section shown according to the exemplary embodiments of complex protection component
Cross-sectional view and photograph.
Fig. 5 is the complex protection element cross-section figure according to another exemplary embodiments.
Fig. 6 is the complex protection element cross-section figure according to another exemplary embodiments.
Fig. 7 is the equivalent circuit diagram according to the complex protection component of exemplary embodiments.
Fig. 8 is the complex protection element cross-section figure according to another exemplary embodiments.
Fig. 9 and Figure 10 is the complex protection element cross-section figure according to the modified example of exemplary embodiments.
Figure 11 is the complex protection element cross-section figure according to comparative example.
Figure 12 and Figure 13 is the frequency characteristic for showing the complex protection element according to comparative example and exemplary embodiments
Curve graph.
Specific embodiment
Hereinafter, specific embodiment will be described in detail referring to attached drawing.However, this disclosure can body in different forms
It is existing, and should not be construed as limited by embodiments set forth herein.Specifically, these embodiments are provided and make this disclosure
Will be to be thorough and complete, and scope of the invention will be sufficiently conveyed to those skilled in the art.
Fig. 1 is the perspective view according to the complex protection components of exemplary embodiments, and Fig. 2 is its cross-sectional view.
Referring to Fig. 1 and Fig. 2, include according to the complex protection component of exemplary embodiments: main body (100);In at least two
Portion's electrode (200) is placed in main body (1000);At least one protection location (300) is placed at least two inside electricity
Between pole (200);At least two connection electrodes (400) are placed in main body (100) to be respectively connected at least two
Portion's electrode (200);And external electrode (500), main body (100) outside is placed in be connected to connection electrode (400).?
Hereinafter, in exemplary embodiments, protect electronic device from overvoltage (such as, the static discharge from external application
(electrostatic discharge;ESD)) and block the leakage current inside electronic device to protect a user from
The complex protection component of electric shock is used as example.
1. main body
Main body (100) can have substantially hexahedral shape.Also that is, main body (100) can have substantially hexahedral shape, tool
There are the predetermined length and preset width distinguished on (for example, X-direction) in one direction and other direction (for example, Y-direction), and
Predetermined altitude in vertical direction (for example, Z-direction).Herein, length in the X direction can be greater than width in the Y direction
And each of height in z-direction, and width in the Y direction can be equal to or different from height in z-direction.When
When width (Y-direction) and height (Z-direction) different from each other, width can be more than or less than height.For example, length, width with
And the ratio of height can be 2 to 5:1:0.3 to 1.Also that is, relative to width, length comparable width is larger about 2 times to about 5 times,
And height can be 0.3 times to 1 times of width.However, although the size as described above on X, Y and Z is described as reality
Example, but the size on X, Y and Z can be according to the internal structure and compound guarantor that the complex protection component of electronic device is connected to
It protects the shape of component and changes in various ways.Also, at least two internal electrodes (200), protection location (300) and connection electricity
Pole (400) is set in main body (100), and external electrode (500) is set to main body (100) outside.
Main body (100) can be formed by being laminated respectively multiple thin slices with predetermined thickness.Also that is, main body (100) can
Respectively there is predetermined length in the X direction, preset width in the Y direction and predetermined thickness in z-direction by being laminated
Degree multiple thin slices and formed.Therefore, the length of main body (100) and width can be determined by the length and width of thin slice, and main body
(100) height can be determined by the number of the lamination of thin slice.Meanwhile the multiple thin slices for forming main body (100) may include dielectric material
Material such as multi-layer capacity circuit (multilayer capacitance circuit;MLCC), low-temperature co-fired ceramics (low
temperature co-fired ceramic;) and high-temperature co-fired ceramics (high temperature co-fired LTCC
ceramic;HTCC).Herein, MLCC dielectric material can have comprising barium titanate (BaTiO3) and metatitanic acid neodymium (NdTiO3) in extremely
The main ingredient of few one, and bismuth oxide (Bi can be added to MLCC dielectric material2O3), silica (SiO2), copper oxide
(CuO), at least one of magnesia (MgO) and zinc oxide (ZnO).LTCC dielectric material may include aluminium oxide (Al2O3)、
Silica (SiO2) and glass material.Each of thin slice can be by containing barium titanate (BaTiO3), metatitanic acid neodymium
(NdTiO3), bismuth oxide (Bi2O3), barium carbonate (BaCO3), titanium dioxide (TiO2-), neodymium oxide (Nd2O3), silica
(SiO2), copper oxide (CuO), magnesia (MgO), zinc oxide (ZnO) and aluminium oxide (Al2O3) at least one of material
It is formed.Alternatively, thin slice can be by such as praseodymium (Pr), bismuth (Bi) or strontium titanate ceramic material (ST- with varistor properties
Based ceramic material) material formed.Therefore, each of thin slice can have predetermined dielectric constant, for example,
5 to 20000, ideally 7 to 5000, more desirably 200 to 3000.
Also, can all have mutually the same thickness in multiple thin slices, and at least one thickness therein can be greater than
Each of or be less than its other.Also that is, when at least one thin slice is set between internal electrode (200) at least partly
ESD protection location (300) and multiple tab laminates are formed on region over and under internal electrode (200) at least partly
When forming connection electrode (400) on region, each of thin slice can have mutually the same thickness, and at least one in thin slice
The thickness of person can be more than or less than each of other thin slices.For example, the ESD formed between internal electrode (200) is protected
The thickness for protecting each of the thin slice of unit (300) can be greater than the thickness of each of other thin slices.Meanwhile multiple thin slices
Can have (for example) 1 micron to 5000 microns or the thickness equal to or less than 3000 microns.Also that is, according to the thickness of main body (100)
Degree, each of thin slice can have 1 micron to 5000 microns, ideally 5 microns to 300 microns of thickness.Also, thin slice is folded
The thickness and number of layer can be adjusted according to the size of complex protection component.Also that is, when being applied to small-sized complex protection component,
Thin slice can have small thickness, and when being applied to large-scale complex protection component, thin slice can have big thickness.Also, when identical
When number thin slice is laminated, the thickness of thin slice can reduce with the size and height of complex protection component and be reduced, and thin slice
Thickness can with the size of complex protection component increase and increase.Alternatively, thin thin slice can be applied to large-scale complex protection
Component.In this situation, the layer number of thin slice can increase.Herein, thin slice can have when applying ESD by the thickness destroyed
Degree.Also that is, although the layer number of thin slice or the thickness of thin slice are different from each other, at least one thin slice, which can have, to be repeated to apply
The thickness of destruction is not will receive when ESD.
Meanwhile the lowest level for being placed in main body (100) respectively and the undercloak (figure in top layer can be further set
In do not show) and upper cover layer (not shown).Herein, lowest level may act as undercloak, and top layer may act as top
Coating.Undercloak set in addition and upper cover layer can have mutually the same thickness, and can be multiple by being laminated
Magnetic material thin slice and formed.However, undercloak and upper cover layer can have thickness different from each other.For example,
The thickness of upper cover layer can be greater than undercloak.Herein, non-magnetic sheet's (for example, glassy state thin slice) can be further arranged
In on the surface (also that is, lower surface and upper surface) of the undercloak and upper cover layer formed by magnetic material thin slice.Also,
The thickness of each of undercloak and upper cover layer can be greater than the thickness of each of internal thin slice.Also that is, covering
The thickness of cap rock can be greater than a thin slice.Therefore, when most descending thin slice and most upper thin slice to serve as lower part covering and upper cover layer,
Most descend each of thin slice and most upper thin slice thickness can greatly therebetween each of thin slice.Meanwhile undercloak
And upper cover layer can be formed by glassy state thin slice, and the surface of main body (100) can be coated with polymer or glass material.
2. internal electrode
In main body (100), at least two internal electrodes (210,220;200) it can be spaced apart at a predetermined distance from each other.Also that is,
On the laminating direction (also that is, Z-direction) of thin slice, at least two internal electrodes (200) can be spaced apart at a predetermined distance from each other.Also, at least
Two internal electrodes (200) may be configured as having protection location (300) therebetween.For example, in z-direction, the first inside electricity
Pole (210) can be placed in below protection location (300), and the second internal electrode (220) can be placed on protection location (300)
Side.Alternatively, at least one internal electrode can be further disposed upon first and second internal electrode (210) with it is most lower and most upper thin
Between piece.Herein, internal electrode (200) is respectively connected to connection electrode (400) and is connected to protection location (300).Also that is,
The side of one internal electrode (210) is connected to the first connection electrode (410) and the other side is connected to protection location (300).Also, the
The side of two internal electrodes (220) is connected to the second connection electrode (420) and the other side is connected to protection location (300).Herein,
The surface of first internal electrode (210) and the second internal electrode (220) faced each other is connected to protection location (300).
Each of internal electrode (200) can be made of an electrically conducting material, conductive material include, for example, containing aluminium (Al),
The metal or its metal alloy of at least one of silver (Ag), gold (Au), platinum (Pt), palladium (Pd), nickel (Ni) and copper (Cu).?
Under the situation of alloy, for example, the alloy of silver with palladium can be used.Meanwhile under the situation of aluminium, aluminium oxide (Al2O3) aluminium can be formed in
Surface on, and aluminium can be maintained during molding process in inside it.Also that is, when aluminium is formed on thin slice, aluminium contact is empty
Gas, and the surface of aluminium is aoxidized to be formed on aluminium oxide (Al2O3) and aluminium maintain on inside as it is.Therefore, internal electricity
Pole (200) can be by being oxidized aluminium (Al2O3) covering aluminium formed, aluminium oxide (Al2O3) it is the thin dielectric layer with porous surface.
Alternatively, in addition to aluminum, various metals also can be used, there is the insulating layer being formed on its surface, preferably porous insulation
Layer.When porous dielectric layer is formed on the surface of internal electrode (200), ESD voltage can be easier to via protection location (300)
And it smoothly discharges.Also that is, although will be described later, protection location (300) includes cellular insulant material, and via micro-
Hole electric discharge.Herein, when porous dielectric layer is formed on the surface of internal electrode (200), the micropore of protection location (300) is removed
Outside, the number of micropore can increase and therefore discharging efficiency can be improved further.
Also, each of internal electrode (200) can have predetermined length in the X direction, pre- fixed width in the Y direction
Degree and predetermined thickness in z-direction.For example, internal electrode (200) can have (for example) 1 micron to 10 microns of thickness
Degree.Herein, at least one region of internal electrode (200) can have small thickness or at least one region can be from internal electrode
(200) it removes to expose thin slice.However, although at least one region of internal electrode (200) have larger or smaller thickness, or
At least one region is removed from internal electrode, but total connection status can be maintained without generating any electrical conductivity problems.Also, internal
Electrode (200) can have length in the X direction and width in the Y direction, and the length and width are less than main body (100)
Length and width.Also that is, the length of internal electrode (200) and width are smaller than the length and width of thin slice.For example, internal
The length and width of electrode (200) can based on (100) or thin slice length and width 10% to 90%.Also, internal electrode
(200) surface area can be 10% to 90% relative to the surface area of each of thin slice.Also that is, being placed in main body (100)
In a thin slice on internal electrode (200) surface area relative to thin slice surface area be 10% to 90%.Meanwhile it is internal
Electrode (200) can have a various shape, such as square, rectangle and have predetermined pattern shape, preset width and predetermined
The spiral shape of distance.
Internal electrode (200) can function simultaneously as the discharge electrode of capacitor and protection location (300).Capacitor is by first
And second internal electrode (200) and thin slice therebetween formed.It can be according to the overlapping between first and second internal electrode (200)
The thickness of thin slice between surface area and first and second internal electrode (200) adjusts capacitor.Also, first and second internal electricity
Discharge electrode is served as in the region Chong Die with protection location 300 of pole (200), so as to will be from the excessively electric of the external such as ESD applied
Pressure is transmitted to protection location (300), and passes through the overvoltage of protection location (300) and filled with bypassing to (for example) electronics
The ground terminal set.
3. protection location
At least one protection location (300) is set between internal electrode (200), and allows to introduce such as from external
The overvoltage of ESD is bypassed to the ground terminal of electronic device.Also that is, from the external electronic device using complex protection component
Overvoltage is introduced to protection location (300) via (for example) the second connection electrode (420) and the second internal electrode (220), and
It in addition bypasses via the first internal electrode (210) and the first connection electrode (410) to the internal circuit of electronic device.Protection location
(300) at least one of flat shape and cross-sectional shape can have comprising roughly circular, oval (oval), rectangle, just
Shape rectangular and equal to or more than pentagonal polygon, and shape can have predetermined thickness.Also that is, protection location
(300) there can be cylindrical, hexahedron or polyhedron-shaped.
Protection location (300) can be at least part weight of the first internal electrode (210) and the second internal electrode (220)
It is folded.For example, the first internal electrode (210) and the second internal electrode (220) can be with the horizontal surface areas of protection location (300)
Domain overlapping 10% to 100%.Also that is, the length of protection location (300) and width may respectively be the first internal electrode (210) and
The 10% to 100% of length and width of two internal electrodes (220) in x-direction and y-direction, thereby increases and it is possible to inside first
Electrode (210) and the second internal electrode (220).Also, protection location (300) can be placed in the first internal electrode (210) and second
On the central area of internal electrode (220).More preferably, protection location (300) can be placed in the central area of main body (100)
On.Also that is, protection location (300) can be set on central area by predetermined diameter, central area is placed in the length of main body (100)
It spends at the half of direction (also that is, X-direction) and the half of width direction (also that is, Y-direction).Alternatively, when the multiple protections of setting
When unit (300), protection location (300) can be spaced a predetermined distance from the central area of main body (100).Therefore, protection location
(300) central area can be placed in central area or the first internal electrode (210) and the second internal electrode of main body (100)
(220) on central area.
The thickness of protection location (300) can based on (100) thickness 1% to 20%, and (100) exist based on length
3% to 50% of length on one direction.Herein, when multiple protection location (300) are arranged, multiple protection locations (300)
Overall thickness can based on (100) thickness 1% to 50%.Also, protection location (300) can have long hole shape, extremely
There is long length on a few direction (for example, X-direction), and long length can for the X-direction length of thin slice 5% to
75%.Also, the Y-direction width of protection location (300) can be the 3% to 50% of the Y-direction width of thin slice.Protection location (300)
Thickness and diameter can be equal to or be less than connection electrode (400) thickness and diameter.For example, the thickness of protection location (300)
Degree can be 1/5 times to 1 times of the thickness of connection electrode (400), and diameter is 1/10 times to 1 of the diameter of connection electrode (400)
Times.Specifically, the diameter of protection location (300) can be for (for example) 50 microns to 1000 microns and with a thickness of (for example) 5 microns
To 600 microns.Herein, as the thickness of protection location (300) reduces, discharge inception voltage reduces.
Protection location (300) may include at least one in the presumptive area for the thin slice being defined between internal electrode (200)
A opening.Also that is, each of at least one opening may act as overvoltage protective unit (300).Herein, protection location
(300) it can be formed and overvoltage protection material to be coated at least part into opening or buries opening.Also that is, protection
Unit (300) may include opening, and the inside of opening is empty and overvoltage protection material is formed at least part of opening.
To form overvoltage protection material, the perforation with predefined size can be defined between internal electrode (200), and overvoltage protection
Material can coat at least part of perforation or bury perforation.Herein, overvoltage protection material can be coated by predetermined thickness to
At least part of the side surface of perforation, at least part of the upper part of perforation and at least one of low portion and
The inside of perforation.Also, the polymer material to volatilize during plastic cement processing can be used to form overvoltage in a part of perforation
Protection materials.
Protection location (300) can be used conductive material and insulating materials as overvoltage protection material.Herein, insulating materials
It can be the cellular insulant material with multiple holes (pore).For example, protection location (300) can be by printing on thin slice
The mixing material of conductivity ceramics and insulating ceramics and formed.Meanwhile protection location (300) can be formed at least one thin slice.
Also that is, for example, protection location (300) can be formed in each of two thin slices through being vertically laminated, and the first inside is electric
Pole (210) and the second internal electrode (220) can be respectively formed on thin slice to be separated from each other and to be connected to protection location
(300).It will describe about the structure of protection location (300) and the detailed description of material later.Meanwhile it can be according to protection location
(300) structure, material and size adjusts discharge inception voltage.For example, complex protection component can have 1kV to 30kV
Discharge inception voltage.
4. connection electrode
Connection electrode (400) may be disposed in main body (100) and between internal electrode (300) and external electrode (500).
Also that is, connection electrode (400) is arranged to internal electrode (300) being connected to external electrode (500).Therefore, connection electrode
It (400) may include being respectively connected to first and second external electrode (510,520;And first and second internal electrode 500)
(210,220;200) the first connection electrode (410) and the second connection electrode (420).The flat shape of connection electrode (400) and
At least one of cross-sectional shape can have comprising roughly circular, oval (oval), rectangle, square and be equal to or more than
The shape of pentagonal polygon, and shape can have predetermined thickness.Also that is, protection location (300) can have cylindrical, six faces
Body is polyhedron-shaped.Also, connection electrode (400) can be Chong Die at least part of protection location (300).It is desirable that connection
Electrode (400) may be disposed on the central part of main body (100) and Chong Die with protection location (300).
Connection electrode (400) is by the presumptive area at least one thin slice being laminated on internal electrode (200)
It defines opening and is formed, and being open is buried by using conductive material.For example, connection electrode (400) can be by containing
The metal or its metal of at least one of aluminium (Al), silver (Ag), gold (Au), platinum (Pt), palladium (Pd), nickel (Ni) and copper (Cu)
Alloy is formed.Alternatively, in addition to metal, connection electrode (400) can be also formed by various conductive materials.
Connection electrode (400) can include Z-direction height, also that is, vertical direction height, single equal to or different from that protection
The Z-direction height of first (300);And the width on each of X and Y-direction, equal to or different from that protection location
(300) width.Also that is, the height of connection electrode (400) can be equal to or be greater than protection location (300) height, and diameter or
Width is equal to or more than the diameter or width of protection location (300).It is desirable that the height of connection electrode (400) can be greater than protection
The height of unit (300), and plane domain is greater than the plane domain of protection location (300).For example, the first connection electrode
(410) and the height of each of the second connection electrode (420) can be 0.5 times to 3 times of the height of protection location (300).
Also, the total height of the first connection electrode (410) and the second connection electrode (420) can be for 1 times of height of protection location (300) extremely
6 times.For example, the first connection electrode (410) and the second connection electrode (420) can have 100 microns to 1000 microns, ideal
200 microns to 900 microns of ground, more desirably 400 microns to 700 microns of total height.Herein, the first connection electrode (410) and
The height of second connection electrode (420) can be different, and width is also different.Also, the X-direction width of connection electrode (400) can based on
The 1% to 90% of the X-direction width of body (100), and based on Y-direction width the Y-direction width of (100) 5% to 90%.This
Place, the X-direction width and Y-direction width of connection electrode (400) can be equal to each other or difference.Also that is, the one of connection electrode (400)
The width comprising X-direction width and Y-direction width in a region can be equal to or different from another region width.In other words, even
Receiving electrode (400) can have at least one region, with asymmetrically shape.Also, the X-direction width and Y of connection electrode (400)
Direction width can be the X-direction width of protection location (300) and 1 times to 10 times of Y-direction width and be internal electrode (200)
1/10 times to 1 times of X-direction width and Y-direction width.Also that is, the width of connection electrode (400) be smaller than main body (100)
Length and width in x-direction and y-direction are equal to or more than the width of protection location (300) and are equal to or less than internal electrode
(200) width.
Connection electrode (400) plays a part of external electrode (500) being connected to internal electrode (200).Therefore, via outside
The overvoltage for such as ESD that electrode (500) applies is transmitted to internal electrode (200) and protection location via connection electrode (400)
(300), it and is transmitted to the overvoltage of protection location (300) and is transmitted again via internal electrode (200) and connection electrode (400)
To external electrode (500).Also, since connection electrode (400) is placed on the central part of main body (100) and width is ideally big
Width in protection location (300), therefore dead resistance and parasitic inductance can reduce.Also that is, pacifying compared to connection electrode (400)
It is placed in the external situation of main body (100), dead resistance and parasitic inductance can reduce.Therefore, in the channel radio of 700MHz to 3GHz
S21 insertion loss under letter frequency band can reduce.Also, since the width of connection electrode (400) is desirably larger than protection location (300)
Width, therefore increase to inhibit discharge inception voltage can be prevented from as repeating damage caused by ESD voltage.Also that is, for example,
Protection location (300) allows ESD voltage to bypass, this can be generated inside connection electrode (400) because being attributed to the energy of ESD
Spark.Herein, when connection electrode (400) have small thickness when, connection electrode (400) be attributable to repeat ESD voltage and by
To breaking-up to increase discharge inception voltage.However, when connection electrode (400) have the thickness equal to or more than 10 microns, it can
It prevents from connection electrode (400) to be attributed to repeat ESD voltage and damaged, and therefore can prevent the increase of discharge inception voltage.
5. external electrode
External electrode (510,520;500) it can be placed in respectively on two faced each other the outer surface of main body (100).It lifts
Example for, external electrode (500) can be placed in respectively main body (100) in Z-direction (also that is, vertical direction) above to mutual
On two surfaces (also that is, bottom surface and top surface).Also, external electrode (500) can be respectively connected to the connection in main body (100)
Electrode (400).Herein, one of external electrode (500) can be connected to the inside of such as printed circuit board in electronic device
Circuit, the other of external electrode can be connected to the outside of electronic device, such as metal shell.For example, outside first
Electrode (510) can be connected to internal circuit, and the second external electrode (520) can be connected to metal shell.Also, the second external electrode
(520) metal shell can be connected to via conducting element (for example, contactor or conductive spacer).
Each of external electrode (500) as described above can be formed by various methods.Also that is, external electrode
(500) can by using the dipping of conductive paste or printing process or such as deposition, sputter and other various methods of plating and
It is formed.Meanwhile external electrode (500) can be formed in the whole surface or a part of bottom surface and top surface.Also that is, removing the bottom of from
Outside the preset width that surface and the edge of top surface rise, external electrode (500) can be formed on bottom surface and top surface.Citing and
Speech, in addition to the preset width from the edge of bottom surface and top surface, the surface area of external electrode (500) can be bottom surface and top
The 50% to 95% of the surface area on surface.Also, external electrode (500) can be formed in the whole region of bottom surface and top surface,
And upwardly or downwardly extend from it to be formed on other side surfaces.Also that is, except the bottom surface and top surface faced in z-direction
Outside, the presumptive area on the surface that external electrode (500) is also extend on each of X and Y-direction pair.Citing and
Speech, when dipping is into conductive paste, external electrode (500) can be formed on side surface in x and y directions and in Z-direction
On top surface and bottom surface on.Compared to this situation, when being formed with such as printing, deposition, sputter and electric plating method,
External electrode (500) can be formed on the predetermined surface region of bottom surface and top surface in z-direction.Also that is, external electrode
(500) forming method and treatment conditions be may depend on and be formed in the bottom surface being installed on printed circuit board and be connected to metal
On the top surface of shell and other regions.Alternatively, external electrode (500) can be formed by conductive metal.For example, external
Electrode (500) can be by form selected from at least one metal of group being made of the following: gold, silver, platinum, copper, nickel, palladium and its
Alloy.Herein, external electrode (500) can have be connected to connection electrode (400) at least one for being formed in external electrode (500)
The partially part on (also that is, at least one surface of main body 100), and be connected to connection electrode (400) part can by with even
The identical material of material of receiving electrode (400) is formed.For example, when connection electrode is formed by copper, external electrode (500)
At least part for connecting the region of electrode (400) can be formed by copper.Herein, as described above, copper can be by using
The dipping of conductive paste or printing process or by such as depositing, sputter and electric plating method and formed.It is desirable that external electrode
(500) it can be formed by plating.To form external electrode (500) via electroplating process, seed layer can be formed in main body (100)
Top surface and bottom surface on, and then coating can from seed layer formed to form external electrode (500).Herein, external electrode
(500) at least part for being connected to connection electrode (400) can based on (100) entire top surface and bottom surface or its portion
Subregion.
Alternatively, external electrode (500) can further include at least one coating.External electrode (500) can be by such as copper and silver
Metal layer formed, and at least one coating can be formed on metal layer.For example, external electrode (500) can pass through lamination
Nickel coating and tin or tin silver coating and formed.Alternatively, coating can pass through lamination copper coating and tin coating or lamination copper plating
Layer, nickel coating and tin coating and formed.Also, external electrode (500) can be by mixing the (for example) oxygen with 0.5% to 20%
Change bismuth (Bi2O3) or silica (SiO2) Main Components multiple groups part frit (Glass frit) and metal powder and shape
At.Herein, the mixture of frit and metal powder can be prepared into paste and coated two surfaces to main body (100).By
Contain frit in external electrode (500), therefore the adhesion between external electrode (500) and main body (100) can be improved, and
The haptoreaction between connection electrode (400) and external electrode (500) can be improved.Also, the conductive paste comprising glass can be coated, and
Then at least one coating can be formed thereon to form external electrode (500).Also that is, external electrode (500) can be by including glass
The metal layer of glass and at least one coating being formed on metal layer are formed.For example, can by so that formed containing frit,
It the layer of silver and at least one of copper and is then formed via the mode that electrodeless plating sequentially forms nickel coating and tin coating
External electrode (500).Herein, the thickness of tin coating can be equal to or greater than nickel coating thickness.Alternatively, external electrode (5000)
It can only be formed by least one coating.Also that is, external electrode (500) can be not coated by and at least via single electroplating process
Paste forms at least one layer of coating to be formed.Meanwhile external electrode (5000) can have 2 microns to 100 microns of thickness
Degree, nickel coating can have 1 micron to 10 microns of thickness, and tin or tin silver coating can have 2 microns to 10 microns of thickness.
6. surfaction element
Meanwhile surfaction element (surface modification member) (not shown) can be formed in main body
(100) at least one surface.Surfaction element can by external electrode (500) formed before in main body (100)
It is distributed (for example) oxide on surface and is formed.Herein, oxide can disperse and be distributed in main body by crystallization or non-crystalline state
(100) on surface.When external electrode (500) is formed via electroplating process, surfaction element can be before electroplating process
It is distributed on the surface of main body (100).Also that is, surfaction element can pass through printing system in a part of external electrode (500)
Journey is distributed before being formed, or is distributed before electroplating process after electroplating process execution.Alternatively, when not executing printing process
When, surfaction element can be distributed and electroplating process then can be performed.Herein, it is distributed in surfaction element on surface extremely
Few a part can be through melting.
Meanwhile at least part of surfaction element can have same size and be distributed evenly in main body (100)
On surface, and its at least part can have size different from each other and unevenly be distributed.Also, depressed section can be defined in master
In at least part on the surface of body (100).Also that is, surfaction element can be formed to form protrusion, and above not
At least part for being formed with the region of surfaction element can be through recessed to form depressed section.Herein, surfaction element
There can be at least part of the surface depth than main body (100).Also that is, surfaction element is inserted into main body (100) reaches
Predetermined depth, and the surface of autonomous agent (100) is prominent up to remaining thickness.Herein, it is inserted into the thickness of the part in main body (100)
It can be 1/20 to 1 times of the average diameter of oxide particle.Also that is, all or part of in oxide particle may be disposed at master
In body (100).Alternatively, oxide particle can be only arranged on the surface of main body (100).Therefore, oxide particle can be in master
There is hemispherical shape or spherical form on the surface of body (100).Also, as described above, surfaction element can be distributed in
It is distributed at least one region in a part on the surface of main body (100) or with thin film shape.Also that is, oxide particle is with island
Shape (island) distribution of shapes on the surface of main body (100) to form surfaction element.Also that is, crystallization or non-crystalline state
Under oxide can be distributed in by island-like shape on the surface of main body (100), and therefore at least one of the surface of main body (100)
Dividing can be exposed.Also, at least two oxides can be connected to each other with by thin film shape at least one region and by island shape
Shape forms surfaction element at least some regions.Also that is, the aggregation of at least two oxide particles or oxygen located adjacent one another
Compound particle is connected to form thin film shape.However, even oxide with particle state exist two or be greater than two grains
Son aggregation or when being connected to each other, at least part on the surface of main body (100) also can be by surfaction elements to outer exposed.
Herein, the total surface area of surfaction element can based on (100) total surface area about 5% to about
90%.Although the plating that can be controlled on the surface of main body (100) based on the surface area of surfaction element is scattered phenomenon,
When surfaction element is formed too much, the conductive pattern in main body (100) and external electrode (400) can have on being in contact with each other
It has any problem.Also that is, when surfaction element is formed in 5% surface region less than the surface area of main body (100), plating
Phenomenon of scattering is almost uncontrolled, and when surfaction element is formed in 90% surface of the surface area greater than main body (100)
When on region, the conductive pattern in main body (100) and external electrode (400) may not be contacted each other.Therefore, surfaction element
Can be desirably formed phenomenon and allows conductive pattern in main body (100) and external electrode (400) in can control plating and scatter
In the surface region being in contact with each other.For this purpose, surfaction element can be formed in based on (100) surface area 10% to
90%, ideally 30% to 70%, in more desirably 40% to 50% surface region.Herein, the surface area of main body (100) can
For the surface area on hexahedral six surfaces of formation of the surface area or main body (100) on a surface.Meanwhile surfaction element
Thickness can be equal to or be less than main body (100) thickness 10%.Also that is, the thickness of surfaction element can based on (100)
Thickness 0.01% to 10%.For example, the size of surfaction element can be 0.1 micron to 50 microns, and therefore, from
The surface of main body (100), the thickness of surfaction element can be 0.1 micron to 50 microns.Also that is, except surfaction element is inserted into
Outside region where into the surface of main body (100), the thickness on the surface of autonomous agent (100), surfaction element can be micro- for 0.1
Rice is to 50 microns.Therefore, when the thickness for the surfaction element being inserted into main body (100) increases, surfaction element
Thickness can be greater than 0.1 micron to 50 microns.When the thickness of surfaction element is less than the 0.01% of the thickness of main body (100),
Plating phenomenon of scattering is almost uncontrolled, and when the thickness of surfaction element is greater than the 10% of the thickness of main body (100), leads
Conductive pattern in body (100) and external electrode (400) may not contact each other.Also that is, according to the characteristic of main body (100) material
Size, abundance and the concentration class of (conductivity, half conductivity, insulation and magnetism) and oxide powder, surfaction
Element can have various thickness.
As described above, it is formed in due to surfaction element on the surface of main body (100), main body (100)
Surface can have different two regions on composition.Also that is, surfaction element can have depends on whether to be formed with surface
Modify element and composition different on region.For example, the composition (also that is, oxide) of surfaction element may be present in
It is formed on the region of surfaction element above, and the composition (also that is, composition of thin slice) of main body (100) may be present in above
On the region of not formed surfaction element.As described above, surfaction element is distributed in main body before electroplating process
(100) on surface, roughness can be applied to the surface of main body (100) and therefore surface can be modified.Therefore, it can equably hold
Row electroplating process, and therefore can control the shape of external electrode (500).Also that is, the surface of main body (100) can have on resistance
At least one region different from other regions, and when executing electroplating process under resistance unstable state, coating is not through
Equably grow.To solve phenomenon described above, the surface of main body (100) can be by dividing on the surface of main body (100)
Oxide of the cloth under particle state or molten condition and modify, and the growth of coating can be controlled.
Herein, the oxide under particle or molten condition to the uniform outer surface resistance of realization body (100) can make
With at least one of the following: for example, bismuth oxide (Bi2O3), boron oxide (BO2), diboron trioxide (B2O3), zinc oxide
(ZnO), cobaltosic oxide (Co3O4), silica (SiO2), aluminium oxide (Al2O3), manganese oxide (MnO), boric acid (H2BO3), carbon
Sour calcium (Ca (CO3)2-), calcium nitrate (Ca (NO3)2) and calcium carbonate (CaCO3).Meanwhile surfaction element can be formed in main body
(100) at least one thin slice in.Also that is, conductive pattern of various shapes can be formed on thin slice via electroplating process, and
The shape of conductive pattern can be controlled and forming surfaction element.
Fig. 3 and Fig. 4 is the schematic cross-section according to the protection location (300) of the complex protection component of exemplary embodiments
Figure and cross section photograph.Also that is, protection location (300) can have the one of thickness of the thickness different from each of other regions
A region.Fig. 3 and Fig. 4 is the schematic amplification cross-sectional view and cross section photograph of a part of protection location (300).
As illustrated in (a) of (a) of Fig. 3 and Fig. 4, protection location (300) can be made of insulating material.Herein, it insulate
Material can be the cellular insulant material (not shown) with multiple holes.Also that is, multiple hole (not shown) can be defined in
In protection location (300).Due to defining hole, the overvoltage of such as ESD can relatively easily be made to bypass.Also, protection is single
First (300) can be formed by hybrid conductive material with insulating materials.For example, protection location (300) can be led by mixing
Electric material is formed with insulating materials.In this situation, protection location (300) can be by with the blending ratio of 10:90 to 90:10
Hybrid conductive ceramics are formed with insulating ceramics.As the blending ratio of insulating ceramics increases, discharge inception voltage can increase, and
As the blending ratio of conductivity ceramics increases, amplification starting voltage can reduce.Therefore, conductivity ceramics and insulating ceramics be can adjust
Blending ratio is to obtain predetermined discharge starting voltage.
Also, protection location (300) can have predetermined laminar structure by lamination conductive layer and insulating layer.Also that is, protection
Unit (300) can be formed and being laminated conductive layer and insulating layer when dividing conductive layer and insulating layer at least once.Citing and
Speech, protection location (300) can have conductive layer and the laminated double-layer structure or conductive layer of insulating layer, insulating layer and conduction
The laminated three-decker of layer.Also, conductive layer (311,312;310) and insulating layer (320) is repeatably laminated repeatedly to be formed
Three or be greater than three-decker.For example, as illustrated in (b) of Fig. 3, protection location (300) can have three-decker, wherein
First conductive layer (311), insulating layer (320) and the second conductive layer (312) are laminated.(b) of Fig. 4 be show thin slice with it is interior
The photograph of the ESD protective layer with three-decker between portion's electrode.Meanwhile when conductive layer and laminated multiple insulating layer,
Top layer and lowest level can be conductive layer.Herein, multiple hole (not shown) can be defined in conductive layer (310) and insulating layer
(320) at least part.For example, since the insulating layer (320) being placed between conductive layer (310) has porous knot
Structure, therefore insulating layer (320) can have multiple holes.
Also, gap (void) can be further defined in the presumptive area of protection location (300).For example, gap can
It is defined between conductive material and the layer at insulating materials mixing place, and gap can be defined between conductive layer and insulating layer.Also
That is, the first mixed layer, gap and the second mixed layer where conductive material and insulating materials mixing can be laminated, and conductive
Layer, gap and insulating layer can be laminated.For example, as illustrated in (c) of Fig. 3, protection location (300) can pass through lamination
First conductive layer (311), the first insulating layer (321), gap (330), second insulating layer (322) and the second conductive layer (312)
And it is formed.Also that is, insulating layer (321,322;320) conductive layer (311,312 can be placed in;310) between, and gap (330) can
It is defined between insulating layer (320).(c) of Fig. 4 is the transversal of the protection location (300) with laminar structure as described above
Face photograph.Alternatively, conductive layer, insulating layer and gap are repeatably laminated to form protection location (300).Meanwhile when
Conductive layer (310), insulating layer (320) and when laminated gap (330), can all have mutually the same thickness or its
At least one of thickness be smaller than the thickness of each of its other.For example, the thickness of gap (330) is smaller than
The thickness of each of conductive layer (310) and insulating layer (320).Also, the thickness of conductive layer (310) can be equal to insulating layer
(320) thickness, or it is more than or less than the thickness of insulating layer (320).Meanwhile gap (330) can pass through filled polymer material
And it is formed, and then molding process is performed to removing polymer material.For example, containing the first polymer of conductivity ceramics
Material, the second polymer material containing insulating ceramics and the third polymer material without conductivity ceramics and insulating ceramics can
Molding process is performed to removing polymer material into through-hole, and then for filling, forms conductive layer, insulating layer and sky whereby
Gap.Meanwhile gap (330) can be formed when not being layered.For example, insulating layer (320) can be placed in conductive layer (311,312)
Between, and gap (330) can be defined by multiple holes in either the vertical or horizontal direction in connection insulating layer (320).
Also that is, gap (330) can be defined by multiple holes in insulating layer (320).Alternatively, gap (330) can be by multiple
Hole and be defined in conductive layer (310).
Meanwhile there can be predetermined resistance for the conductive layer (310) in protection location (300) and electric current is allowed to flow through.It lifts
For example, conductive layer (310) can be for several ohms to the resistor of hundreds of megohms.When the overvoltage quilt of such as ESD
When introducing, conductive layer (310) reduces energy rank and is destroyed in structure with preventing complex protection component to be attributed to overvoltage.Also
That is, conductive layer (310) serves as the cooling fin (heat sink) for converting electric energy to thermal energy.Conductive layer (310) can be by conductivity ceramics
It is formed, and the mixture containing at least one of the following: lanthanum (La), nickel, cobalt, copper, zinc, ruthenium can be used in conductivity ceramics
(Ru), silver, palladium, platinum, tungsten, iron and bismuth.Also, conductive layer (310) can have 1 micron to 50 microns of thickness.Also that is, when conduction
When layer (310) includes multiple layers, overall thickness can be 1 micron to 50 microns.
Also, the insulating layer (320) in protection location (300) can be made of discharging induced material and serve as with porous
The electric barrier of structure.Insulating layer (320) can be made of insulating ceramics, and insulating ceramics may include the dielectric with 50 to 50000
The ferroelectric material of constant.For example, insulating ceramics can be by the dielectric material powder of such as MLCC and containing in the following
The mixture of at least one formed: zirconium oxide (ZrO), zinc oxide (ZnO), barium titanate (BaTiO3), five oxidation two neodymiums
(Nd2O5), barium carbonate (BaCO3), titanium dioxide (TiO2), neodymium (Nd), bismuth (Bi), zinc (Zn) and aluminium oxide (Al2O3).More
When a hole respectively has 1 nanometer to 5 microns of diameter, insulating layer (320) can have porosity be 30% to 80% it is porous
Structure.Herein, the minimum range between hole can be 1 nanometer to 5 microns.Also that is, although insulating layer (320) can not be flowed by electric current
The electrically insulating material of warp is formed, but due to foring hole, electric current can flow through hole.Herein, with pore size or hole
Gap rate increases, and discharge inception voltage can reduce, and on the contrary, discharge inception voltage can increase as pore size or porosity reduce
Greatly.However, protection location (300) may be unable to maintain that its shape when pore size is greater than 5 microns or porosity is greater than 80%
Shape.Therefore, the pore size and porosity that can adjust insulating layer (320) maintain protection single to adjust discharge inception voltage
The shape of first (300).Meanwhile when protection location (300) is formed by the mixing material of insulating materials and conductive material, have micro-
The insulating ceramics of hole and its porosity can be used as insulating materials.Also, the resistance of insulating layer (320) is attributable to micropore and is less than thin
The resistance of piece, and electric discharge can via celled portion be implemented.Also that is, since micropore is defined in insulating layer (320), part
Electric discharge is executed via micropore.Insulating layer (320) can have 1 micron to 50 microns of thickness.Also that is, when insulating layer (320) include
At multiple layers, overall thickness can be 1 micron to 50 microns.
Fig. 5 is the schematic cross-section according to the protection location (300) of the complex protection component of another exemplary embodiments
Figure.Also that is, as illustrated in (a) of Fig. 5, protection location (300) may include gap (330).Also that is, overvoltage may not be protected
Protective material is filled into the opening for passing through thin slice to define gap (330) in protection location (300).Also, protection location (300)
At least one region of perforation can be made of cellular insulant material.Also that is, as illustrated in (b) of Fig. 5, cellular insulant material
Can it is coated to perforation side wall to form insulating layer (320), and as illustrated in (c) of Fig. 5, insulating layer (320) can be formed
In at least one of the upper part of perforation and low portion.
Meanwhile Fig. 6 is the schematic cross according to the protection location (300) of the another exemplary embodiments of complex protection component
Sectional view.As illustrated in fig. 6, protection location (300), which can further include, is placed in internal electrode (210,220;And overvoltage 200)
Discharging induced layer (340) between protection location (300).Also that is, discharging induced layer (340) can be further disposed upon internal electrode
(200) between protection location (300).Herein, internal electrode (200) may include conductive layer (211a, 212a) and be set to
Porous dielectric layer (211b, 212b) at least one surface of conductive layer (211a, 212a).Alternatively, internal electrode (200)
It can be the conductive layer that porous dielectric layer is not formed.
When protection location (300) is made of cellular insulant material, discharging induced layer (340) can be formed.Herein, electric discharge lures
The dielectric layer for the density that conducting shell (340) can be greater than protection location (300) by density is made.Also that is, discharging induced layer (340) can be by
Conductive material or insulating materials are made.For example, when protection location (300) is made of porous zirconia (ZrO) and internal electricity
When pole (210) is made of aluminum, the discharging induced layer (340) made of zirconia-alumina (AlZrO) can be formed in protection location (300)
Between internal electrode (200).Meanwhile titanium oxide (TiO) substitution zirconium oxide (ZrO) can be used for protection location (300), and herein
Under situation, discharging induced layer (340) can be made of titanium aluminum oxide (TiAlO).Also that is, discharging induced layer (340) can be via inside
Reacting between electrode (200) and protection location (300) to be formed.Alternatively, discharging induced layer (340) can via sheeting it
Between reaction formed.In this situation, discharging induced layer (340) can pass through internal electrode material (for example, aluminium), protection location material
Expect (for example, zirconium oxide (ZrO)) and sheeting (for example, barium titanate (BaTiO3)) between reaction formed.Also, electric discharge lures
Conducting shell (340) can be formed and reacting with sheeting.Also that is, discharging induced layer (340) can via protection location (300) with
Reaction between thin slice is formed in the region where protection location (300) contact thin slice.Therefore, discharging induced layer (340) can
Around protection location (300).Herein, the discharging induced layer (340) between protection location (300) and discharge electrode (310) and
Discharging induced layer (340) between protection location (300) and thin slice can have composition different from each other.Meanwhile it is discharging induced
Layer (340) can have removed at least one region or thickness different from least one region of the thickness in other regions.Also
That is, discharging induced layer (340) there can be at least one removed region and discontinuously be formed, or there is thickness difference not
At least one region being formed uniformly.Discharging induced layer (340) can be formed during molding process.Also that is, treating as shape journey
When executing at a predetermined temperature, discharge electrode material, ESD protection materials with and so on can phase counterdiffusion to form internal electricity
Discharging induced layer (340) between pole (200) and protection location (300).Meanwhile the thickness of discharging induced layer (340) can be guarantor
Protect the 10% to 70% of the thickness of unit (300).Also that is, a part of the thickness of protection location (300) is convertible into electric discharge and lures
Conducting shell (340).Therefore, the thickness of discharging induced layer (340), which is smaller than the thickness of protection location (300) and is equal to, is greater than internal electricity
The thickness of pole (200).Discharging induced layer (340) allows ESD voltage to be induced to protection location (300), or induction is extremely protected
The level (level) of the discharge energy of unit (300) can reduce.Therefore, ESD voltage can be relatively easy to electric discharge to improve electric discharge effect
Rate.Also, can prevent different types of material from diffusing to protection location (300) due to foring discharging induced layer (340).
Also that is, can prevent sheeting and internal electrode material from diffusing to protection location (300), and it can prevent overvoltage protection material from expanding
It is dissipated to outside.Therefore, discharging induced layer (340) can be used as diffusion barrier (difusion barrier) and therefore prevent protection single
First (300) are destroyed.Meanwhile protection location (300) can further include conductive material, and in this situation, conductive material can be coated with
There is insulating ceramics.For example, such as described by using (a) of Fig. 3, when protection location (300) pass through mixing porous insulation
Material and conductive material and when being formed, conductive material can be coated with nickel oxide (NiO), copper oxide (CuO), tungsten oxide (WO) or its
Fellow.Therefore, conductive material can be used as the material of protection location (300) together with cellular insulant material.Also, when removing porous insulation
Outside material, (for example, as described in (b) of Fig. 3 and (c) of Fig. 3 when conductive material is also further used for protection location (300)
It is bright), when insulating layer (320) is formed between two conductive layers (311,312), discharging induced layer (340) can be formed in conduction
Between layer (310) and insulating layer (320).Meanwhile internal electrode (200) can have a part of removed shape.Also that is, it is internal
Electrode (200) can be partially removed, and discharging induced layer (340) can be formed in removed region.However, although internal electrode
(200) it can be partially removed, but the shape due to maintaining totally to connect, electrical characteristics may not reduce.
Internal electrode (200) can be made of metal or metal alloy, and wherein insulating layer is formed on its surface.Also that is, it is interior
Portion's electrode (200) may include conductive layer (211a, 212a) and be formed at least one surface of conductive layer (211a, 212a)
Insulating layer (211b, 212b).Herein, porous dielectric layer (211b, 212b) can be formed at least one of internal electrode (200)
On surface.Also that is, porous dielectric layer (211b, 212b) can be formed in a surface of not contact protection unit (300) and connect
It touches on one of another surface of protection location (300), or a surface and the contact guarantor of not contact protection unit (300)
It protects in the whole in another surface of unit (300).Also, porous dielectric layer (211b, 212b) can be formed in conductive layer (211a,
In at least whole surface or its at least part 212a).Also, porous dielectric layer (211b, 212b) can have removed or tool
There is at least one region of small thickness.Also that is, porous dielectric layer (211b, 212b) may be not formed at conductive layer (211a,
On at least one region on 212a), and the thickness at least one region of porous dielectric layer (211b, 212b) can be thin or thick
In other regions.Internal electrode (200) as described above, which can have above during molding process, is formed with sull
Surface and inside to maintain conductivity is formed by aluminium.Also that is, when aluminium is formed on thin slice, aluminium ingress of air, and aluminium
Surface be formed on aluminium oxide Al through aoxidizing2O3) and aluminium maintain on inside as it is.Therefore, internal electrode (200)
It can be by being oxidized aluminium (Al2O3) covering aluminium formed, aluminium oxide (Al2O3) it is the thin dielectric layer with porous surface.Alternatively,
In addition to aluminum, various metals also can be used, there is the insulating layer being formed on its surface, preferably porous dielectric layer.
As described above, as illustrated in figure 7, metal may be disposed at according to the complex protection component of exemplary embodiments
Between shell (10) and internal circuit (20).Also that is, one of external electrode (500) can be connected to ground terminal, and it is external
The other of electrode can be connected to the metal shell (10) of electronic device.Herein, ground terminal can be placed in internal circuit
(20) in.For example, the first external electrode (510) can be connected to ground terminal, and the second external electrode (520) can be connected to
Metal shell (10).Also, the conducting element of such as contactor and conductive spacer can be further disposed upon the second external electrode (520)
Between metal shell (10).Therefore, the shock voltage of metal shell (10) is transmitted to from the ground terminal of internal circuit (20)
It can be blocked, and the ESD voltage for being applied to internal circuit from outside is capable of bypass to ground terminal.Also that is, according to illustrative implementation
The complex protection component of example can make electric current that can not flow between the external electrode (500) under voltage rating and shock voltage
It is dynamic, and allow current to enough flow through protection location (300), so that overvoltage is bypassed into ground terminal.Meanwhile complex protection component
There can be greater than voltage rating and be less than the discharge inception voltage of ESD voltage.For example, complex protection component can have 100V
To the voltage rating of 240V, shock voltage can be equal to or greater than circuit operating voltage, and by exterior static generate ESD voltage
Shock voltage can be greater than.Also, can be by being formed in internal electrode from external signal of communication (also that is, ac frequency)
(200) capacitor between and be transmitted to internal circuit (20).Therefore, or even in metal shell (10) it is used as antenna without preparing volume
When outside antenna, also signal of communication can be received from external.As a result, the complex protection component according to exemplary embodiments can block electric shock
ESD voltage is bypassed to ground terminal and signal of communication is applied to internal circuit by voltage.
Also, when main body (100), which is, by being laminated there are multiple thin slices of high voltage resistance characteristic to be formed, according to illustration
Property embodiment complex protection component can maintain insulation resistance state, such as because defective charger draws from internal circuit (20)
The shock voltage for entering 310V flow leakage current can not into metal shell (10), and protection location (300) also can by
Overvoltage makes overvoltage bypass without damaging element to maintain high insulation when being introduced to internal circuit (20) from metal shell (10)
Resistance states.Also that is, having porous structure to allow electric current to flow through the porous insulation material of micropore since protection location (300) include
Expect and further include the conductive material for reducing energy rank to convert electric energy to thermal energy, therefore can be bypassed from the external overvoltage introduced
To protect circuit.Therefore, insulation breakdown or even under over-voltage condition may not also occur, and therefore, protection location can pacify
Be placed in the electronic device comprising metal shell (10) with constantly prevent the shock voltage generated from defective charger via
The metal shell (10) of electronic device is transmitted to user.Meanwhile general multi-layer capacity circuit (multilayer
capacitance circuit;MLCC shock voltage) is protected the components from, but is weak for the protection of ESD.Therefore, when weight
When applying ESD again, be attributable to charge (charging) and at leakage point (Leak point) generate spark (Spark) with
There is component damage phenomenon.However, according to exemplary embodiments, due to protection location (300) shape comprising cellular insulant material
At between internal electrode (200), therefore overvoltage passes through protection location (300), and therefore at least the one of main body (100)
Part is not affected by destruction.
Also, due to connection electrode (400) be placed on the central part of main body (100) and width be desirably larger than protect it is single
The width of first (300), therefore dead resistance and parasitic inductance can reduce.Also that is, being placed in main body compared to connection electrode (400)
(100) external situation, dead resistance and parasitic inductance can reduce.Therefore, under the wireless communication frequency band of 700MHz to 3GHz
S21 insertion loss can reduce.Also, since the width of connection electrode (400) is desirably larger than the width of protection location (300),
Therefore as repeating the increase that damage can be prevented to inhibit discharge inception voltage caused by ESD voltage.Also that is, for example, protection is single
First (300) allow ESD voltage to bypass, this is to generate spark inside protection location (300) because being attributed to the energy of ESD.
Herein, when connection electrode (400) have small thickness, connection electrode (400) is attributable to repeat ESD voltage and damaged
To increase discharge inception voltage.However, when connection electrode (400) have the thickness equal to or more than 10 microns, it can the company of preventing
Receiving electrode (400), which is attributed to, to be repeated ESD voltage and is damaged, and the phenomenon that therefore can prevent discharge inception voltage from increasing.
Meanwhile according to exemplary embodiments, description is placed in the electronic device of smart phone to protect electronic device to exempt from
Protected the complex protection component of user whereby by the leakage current of the inside of overvoltage and blocking from electronic device of such as ESD
As example.However, can also be placed in electricity in addition to smart phone according to the complex protection component of exemplary embodiments and electronics fills
To execute at least two defencive functions in setting.
Fig. 8 is the complex protection element cross-section figure according to another exemplary embodiments.
Referring to Fig. 8, include according to the complex protection component of another exemplary embodiments: main body (100), plurality of thin slice
It is laminated;At least two internal electrodes (200) are placed in main body (1000);At least one protection location (300), peace
It is placed between at least two internal electrodes (200);Connection electrode (400) is placed in main body (100) to be connected at least
Two internal electrodes (200);And external electrode (500), main body (100) outside is placed in be connected to connection electrode
(400).Herein, protection location (300) can further include widening parts (350) make at least one region have wider width.
Also that is, protection location (300) can be formed such that at least one region has wider width and further including widening parts (350)
Degree.The width of widening parts (350) can be the 1% to 150% of the diameter of protection location (300).Also that is, widening parts (350)
Width can be not formed for the upper surface of protection location (300) widening parts (350) other regions width 1% to
150%.For example, widening parts (350) can have by adding to the straight of protection location (300) for 10 microns to 100 microns
Diameter and the diameter obtained.Also, the height of widening parts (350) can be the 10% to 70% of the total height of protection location (300).?
When widening parts (350) are formed as described above, widening parts (350) can block the short circuit paths of protection location (300).
Also that is, when repeatedly applying the overvoltage of such as ESD, it may occur in which the melting phenomenon of connection electrode (400), and therefore connection electricity
Pole material can block the side wall to the perforation of protection location (300) to there is short circuit phenomenon.However, due to different-diameter
Widening parts (350) are formed on protection location (300), therefore short circuit paths can be blocked.
Fig. 9 and Figure 10 is the complex protection element cross-section figure according to the modified example of exemplary embodiments.It illustrates
Property embodiment modified example further include contact such as conductor of metal shell (10) contact component.Also that is, complex protection
Component is set between metal shell (10) and internal circuit (20), and as illustrated in each of Fig. 9 and Figure 10, is had
The contact component (610) of clamp-shaped may be disposed at compound guarantor by using the contact component (620) that conductive material layer is formed
It protects on the second external electrode (520) of component.Contact component (610,620) has elastic force to be applied to electronics from outside in external force
Impact is absorbed when device, and is made of the material comprising conductive material.Meanwhile first external electrode (510) can be positioned to contact
Internal circuit (20), and the layer of the metal of such as stainless steel can be further disposed upon internal circuit (20) and the first external electrode
(510) between.
Contact component can have clamp-shaped (clip) as illustrated in figure 9.Fixture shape contact component may include: support
Partially (611) are placed on complex protection component;Contact portion (612) is placed in above support section (611) with face
Conductor and its at least part to such as metal shell contact conductor;And coupling part (613), it is placed in support section
(611) between the side of side and contact portion (612) so as to by support section (611) be connected to contact portion (612) and
With elastic force.Herein, an end of support section (611) is connected to one of contact portion (612) by coupling part (613)
End and have curvature.Also that is, coupling part (613) have elastic force, by elastic force, coupling part (613) are by pressed by external force
When be pressed towards circuit board (20) and restore when external force is released to reset condition.Therefore, contact component (610) can be by with bullet
The metal material of power is made, so that coupling part (613) have elastic force.
Also, may include conductive rubber, conductive silicon, the elasticity for being inserted into conductor wire according to the contact component of exemplary embodiments
The surface of body and gasket, gasket is coated with or is combined with conductor.Also that is, as illustrated in Figure 10, contact component (620) can wrap
Containing conductive material layer.For example, conductive spacer can have internal made of non-conductive resilient material and be coated with conduction
The outside of material.Although undeclared, conductive spacer may include: dielectric resilience core, has and is defined in perforation therein;And
Conductive layer surrounds dielectric resilience core.Dielectric resilience core has tube shape, has and is defined in perforation therein.Although insulation
Flexible core can have substantially rectangular or circular cross section, but exemplary embodiments are without being limited thereto.Also that is, dielectric resilience core can have
There is various shape.For example, perforation may not be included in dielectric resilience core.Dielectric resilience core can be by silicon or elastic rubber system
At.Conductive layer can surround dielectric resilience core.Conductive layer may include at least one metal made of (for example) gold, silver and copper
Layer.Alternatively, conductive powder can be mixed to flexible core without forming conductive layer.
Meanwhile contact component (610,620) horizontally can be disposed and be installed relative to the main body (100) of complex protection component
In on internal circuit (20).Also that is, although contact component (610,620) is placed in master in the modified example of Fig. 9 and Figure 10
On the top surface of body (100), but contact component (610,620) can be placed on side surface while be spaced apart with main body (100), and
It is installed on internal circuit (20) to be connected via the first external electrode (510) of main body (100).
Comparative example and exemplary embodiments
Check the position according to the connection electrode of complex protection component and the insertion loss of size.It therefore, will be according to illustration
The complex protection component of property embodiment is fabricated to the structure in Fig. 2.Also that is, protection location (300) is placed in main body (100)
Central part on, and size be greater than protection location (300) internal electrode (210,220) be placed on protection location (300)
Side and lower section, and size be greater than protection location (300) and size be less than internal electrode (210,220) connection electrode (410,
420) it is placed in over and under internal electrode (210,220).Herein, connection electrode (410,420) is placed in main body (100)
It is in the central area in portion and Chong Die with protection location (300).
Also, being manufactured as illustrated in Figure 11 according to the electric shock protection component of comparative example.Also namely based in Korean registered
Structure proposed by patent the 10-1585604th, protection location (300a) are placed on the central part of main body (100), and
First internal electrode (210a, 210b) is placed in below protection location (300a) and top.Also, the second internal electrode (220a,
220b) and each of third internal electrode (23a, 230b) is placed in below internal electrode (210a, 210b) and top,
And each of connection electrode (400a, 400b) is connected to first to third internal electrode (210,220,230).Herein, root
Protection location (300a) according to comparative example is in item identical with the condition of protection location (300) according to exemplary embodiments
It is formed under part.Also, be not provided with according to the connection electrode (410a, 410b) of comparative example on the central part of main body (100), and
It is positioned adjacent at the position at edge, also that is, and by the region quartering between margin and center part four from edge
At/mono- region.Also, being less than according to the diameter of the connection electrode (410a, 420b) of comparative example according to exemplary embodiments
Connection electrode (410,420) diameter.Also that is, can be root according to the diameter of the connection electrode (410a, 410b) of comparative example
According to the 1/4 of the diameter of the connection electrode (410,420) of exemplary embodiments.Also, other in addition to condition as described above
Part is identical as the condition of exemplary embodiments.However, comparative example further includes the second internal electrode (220) and third internal electrode
(230)。
The frequency spy of complex protection component according to the electric shock protection component of comparative example and according to exemplary embodiments
Property is illustrated in Figure 13 and Figure 14 and is shown in Table 1.
[table 1]
As shown in Figure 13 and Figure 14 and table 1, it is being equal to or more than according to the electric shock protection component of comparative example
The loss for being equal to or more than -0.5dB is generated under the frequency of 1.24GHz, and is produced according to the complex protection unit of exemplary embodiments
Raw loss is less than the loss of comparative example.Also that is, since connection electrode is placed on the central part of main body and is had wide
Width, therefore the situation on exterior section and with small width is placed in compared to connection electrode, dead resistance and parasitic electricity
Sense can minimize and insertion loss can reduce.
Although having referred to specific embodiment describes this disclosure, but it is not limited to this.Therefore, those skilled in the art
It will readily appreciate that, in the case where not departing from the spirit and scope of the invention defined by claim, it can be carried out
Various modifications and change.
Claims (16)
1. a kind of complex protection component comprising:
Main body;
At least two internal electrodes are set in the main body;
At least one protection location is set to described two or is greater than between two internal electrodes;
At least two connection electrodes are set in the main body and are respectively connected to described two or are greater than two internal electricity
Pole;And
At least two external electrodes are set to the body exterior and are respectively connected to described two or are greater than two connection electricity
Pole,
Wherein the connection electrode is Chong Die at least part of the protection location.
2. complex protection component according to claim 1, wherein the main body is and being laminated multiple thin slices each other
It is formed, and the external electrode is respectively formed in the laminated side of the thin slice upwardly facing on mutual two surfaces.
3. complex protection component according to claim 2, wherein the protection location is length in the main body, width
And it is formed on the direction of thickness on the central part of the main body.
4. complex protection component according to claim 3, wherein the protection location further includes widening parts, the extension
Component has diameter different from least one region of the diameter in other regions.
5. complex protection component according to claim 3 or 4, wherein the connection electrode is the length in the main body
The central portion of the main body is set on the direction of degree and the width.
6. complex protection component according to claim 5, wherein the length of each of described connection electrode be equal to or
Greater than the length of the main body 1% and width be equal to or more than the main body width 5%.
7. complex protection component according to claim 6, wherein the horizontal surface area of the connection electrode is equal to or less than
The horizontal surface area of each of the internal electrode, and the horizontal surface area of the protection location is equal to or less than the company
The horizontal surface area of receiving electrode.
8. complex protection component according to claim 7, wherein the height of the connection electrode is equal to or more than the guarantor
Protect the height of unit.
9. complex protection component according to claim 8, wherein described two or greater than each in two connection electrodes
Person has 5 microns to 600 microns of height with 100 microns to 1000 microns of height or the protection location.
10. complex protection component according to claim 1, wherein it is described two or be greater than two connection electrodes in size and
The upper difference of at least one of shape.
11. complex protection component according to claim 1 can further include being connected to one of described external electrode
Contact component.
12. complex protection component according to claim 1, wherein capacitor is formed in described two or greater than two internal electricity
Between pole, and discharge electrode is served as in an at least region Chong Die with the protection location for the internal electrode.
13. according to claim 1 or complex protection component described in 12, wherein one of described external electrode is connected to electronics
The internal circuit of device, and the other of described external electrode is connected to the conductor that can be contacted by external users.
14. a kind of electronic device comprising complex protection component, the complex protection component is placed in can be by user's contact
To block shock voltage and overvoltage is allowed to pass through between conductor and internal circuit,
Wherein the complex protection component includes:
Main body;
At least two internal electrodes are placed in the main body;
At least one protection location is placed in described two or is greater than between two internal electrodes;
At least two connection electrodes, be placed in the main body so as to be connected to it is described two or be greater than two internal electrodes;
And
At least two external electrodes are placed in the body exterior to be connected to described two or greater than two connections electricity
Pole, and
The connection electrode is Chong Die at least part of the protection location.
15. electronic device according to claim 14, wherein one of described external electrode is connected to the internal electricity
Road, and the other of described external electrode is connected to the conductor.
16. electronic device according to claim 14 further includes being placed in the conductor and the complex protection component
Between contact component.
Applications Claiming Priority (3)
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KR10-2016-0129999 | 2016-10-07 | ||
KR1020160129999A KR101789243B1 (en) | 2016-10-07 | 2016-10-07 | Complex protection device and electronic device having the same |
PCT/KR2017/010675 WO2018066871A1 (en) | 2016-10-07 | 2017-09-27 | Complex protection device and electronic apparatus including same |
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CN109791841A true CN109791841A (en) | 2019-05-21 |
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CN201780056215.7A Pending CN109791841A (en) | 2016-10-07 | 2017-09-27 | Complex protection component and electronic device comprising the component |
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KR (1) | KR101789243B1 (en) |
CN (1) | CN109791841A (en) |
TW (1) | TWI674038B (en) |
WO (1) | WO2018066871A1 (en) |
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JP7231340B2 (en) * | 2018-06-05 | 2023-03-01 | 太陽誘電株式会社 | Ceramic electronic component and manufacturing method thereof |
KR102139772B1 (en) * | 2018-11-27 | 2020-07-31 | 삼성전기주식회사 | Varistor and varistor manufacturing method |
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2016
- 2016-10-07 KR KR1020160129999A patent/KR101789243B1/en active IP Right Grant
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- 2017-09-27 CN CN201780056215.7A patent/CN109791841A/en active Pending
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Also Published As
Publication number | Publication date |
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TWI674038B (en) | 2019-10-01 |
WO2018066871A1 (en) | 2018-04-12 |
TW201815231A (en) | 2018-04-16 |
KR101789243B1 (en) | 2017-11-20 |
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